Showing 1–8 of 8 results for author: Huon, A

Emergent magnetic states and tunable exchange bias at all 3d nitride heterointerfaces

Authors: Qiao Jin, Qinghua Zhang, He Bai, Amanda Huon, Timothy Charlton, Shengru Chen, Shan Lin, Haitao Hong, Ting Cui, Can Wang, Haizhong Guo, Lin Gu, Tao Zhu, Michael R. Fitzsimmons, Kui-juan Jin, Shanmin Wang, Er-Jia Guo

Abstract: Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. He… ▽ More Interfacial magnetism stimulates the discovery of giant magnetoresistance and spin-orbital coupling across the heterointerfaces, facilitating the intimate correlation between spin transport and complex magnetic structures. Over decades, functional heterointerfaces composed of nitrides are seldomly explored due to the difficulty in synthesizing high-quality and correct composition nitride films. Here we report the fabrication of single-crystalline ferromagnetic Fe3N thin films with precisely controlled thickness. As film thickness decreasing, the magnetization deteriorates dramatically, and electronic state transits from metallic to insulating. Strikingly, the high-temperature ferromagnetism maintains in a Fe3N layer with a thickness down to 2 u. c. (~ 8 Å). The magnetoresistance exhibits a strong in-plane anisotropy and meanwhile the anomalous Hall resistance reserves its sign when Fe3N layer thickness exceeds 5 u. c. Furthermore, we observe a sizable exchange bias at the interfaces between a ferromagnetic Fe3N and an antiferromagnetic CrN. The exchange bias field and saturation moment strongly depend on the controllable bending curvature using cylinder diameter engineering (CDE) technique, implying the tunable magnetic states under lattice deformation. This work provides a guideline for exploring functional nitride films and applying their interfacial phenomena for innovative perspectives towards the practical applications. △ Less

Submitted 12 September, 2022; originally announced September 2022.

Atomically engineered cobaltite layers for robust ferromagnetism

Authors: Shengru Chen, Qinghua Zhang, Xujing Li, Jiali Zhao, Shan Lin, Qiao Jin, Haitao Hong, Amanda Huon, Timothy Charlton, Qian Li, Wensheng Yan, Jiaou Wang, Chen Ge, Can Wang, Baotian Wang, Michael R. Fitzsimmons, Haizhong Guo, Lin Gu, Wen Yin, Kuijuan Jin, Er Jia Guo

Abstract: Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedr… ▽ More Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining significant misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers triggers the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transits to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering. △ Less

Submitted 7 July, 2022; originally announced July 2022.

Comments: 18 pages, 5 figures

Room-Temperature Valence Transition in a Strain-Tuned Perovskite Oxide

Authors: Vipul Chaturvedi, Supriya Ghosh, Dominique Gautreau, William M. Postiglione, John E. Dewey, Patrick Quarterman, Purnima P. Balakrishnan, Brian J. Kirby, Hua Zhou, Huikai Cheng, Amanda Huon, Timothy Charlton, Michael R. Fitzsimmons, Caroline Korostynski, Andrew Jacobson, Lucca Figari, Javier Garcia Barriocanal, Turan Birol, K. Andre Mkhoyan, Chris Leighton

Abstract: Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transitio… ▽ More Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr1-xCaxCoO3). Here, we show that in thin films of the complex perovskite (Pr1-yYy)1-xCaxCoO3-δ, heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point. △ Less

Submitted 9 June, 2022; v1 submitted 20 December, 2021; originally announced December 2021.

Comments: 35 pages, 7 figures

Flat Band Induced Negative Magnetoresistance in Multi-Orbital Kagome Metal

Authors: Jie Zhang, T. Yilmaz, J. W. R. Meier, J. Y. Pai, J. Lapano, H. X. Li, K. Kaznatcheev, E. Vescovo, A. Huon, M. Brahlek, T. Z. Ward, B. Lawrie, R. G. Moore, H. N. Lee, Y. L. Wang, H. Miao, B. Sales

Abstract: Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report nega… ▽ More Electronic flat band systems are a fertile platform to host correlation-induced quantum phenomena such as unconventional superconductivity, magnetism and topological orders. While flat band has been established in geometrically frustrated structures, such as the kagome lattice, flat band-induced correlation effects especially in those multi-orbital bulk systems are rarely seen. Here we report negative magnetoresistance and signature of ferromagnetic fluctuations in a prototypical kagome metal CoSn, which features a flat band in proximity to the Fermi level. We find that the magnetoresistance is dictated by electronic correlations via Fermi level tuning. Combining with first principles and model calculations, we establish flat band-induced correlation effects in a multi-orbital electronic system, which opens new routes to realize unconventional superconducting and topological states in geometrically frustrated metals. △ Less

Submitted 19 May, 2021; v1 submitted 18 May, 2021; originally announced May 2021.

Twin-domain formation in epitaxial triangular lattice delafossites

Authors: Jong Mok Ok, Sangmoon Yoon, Andrew R. Lupini, Panchapakesan Ganesh, Amanda Huon, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO2, which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, the high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly… ▽ More Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO2, which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, the high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly caused by the formation of twin domains, and their boundaries can be a source of scattering centers for charge carriers. To overcome this challenge, the underlying mechanism for their formation must be understood, so that such defects can be controlled and eliminated. Here, we report the origin of structural twins formed in a CuCrO2 delafossite thin film on a substrate with hexagonal or triangular symmetries. A robust heteroepitaxial relationship is found for the delafossite film with the substrate, and the surface termination turns out to be critical to determine and control the domain structure of epitaxial delafossites. Based on such discoveries, we also demonstrate a twin-free epitaxial thin films grown on high-miscut substrates. This finding provides an important synthesis strategy for growing single domain delafossite thin films and can be applied to other delafossites for epitaxial synthesis of high-quality thin films. △ Less

Submitted 4 May, 2021; originally announced May 2021.

Dimensional Control of Octahedral Tilt in SrRuO3 via Infinite-layered Oxides

Authors: Shan Lin, Qinghua Zhang, Xiahan Sang, Jiali Zhao, Sheng Cheng, Amanda Huon, Qiao Jin, Shuang Chen, Shengru Chen, Haizhong Guo, Meng He, Chen Ge, Can Wang, Jia-Ou Wang, Michael R. Fitzsimmons, Lin Gu, Tao Zhu, Kui-juan Jin, Er-Jia Guo

Abstract: Manipulation of octahedral distortion at atomic length scale is an effective means to tune the physical ground states of functional oxides. Previous work demonstrates that epitaxial strain and film thickness are variable parameters to modify the octahedral rotation and tilt. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we pro… ▽ More Manipulation of octahedral distortion at atomic length scale is an effective means to tune the physical ground states of functional oxides. Previous work demonstrates that epitaxial strain and film thickness are variable parameters to modify the octahedral rotation and tilt. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we propose a new route to tune the ferromagnetic response in SrRuO3 (SRO) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO) layers. The infinite-layered CuO2 in SCO exhibits a structural transformation from "planar-type" to "chain-type" as reducing film thickness. These two orientations dramatically modify the polyhedral connectivity at the interface, thus altering the octahedral distortion of SRO. The local structural variation changes the spin state of Ru and hybridization strength between Ru 4d and O 2p orbitals, leading to a significant change in the magnetoresistance and anomalous Hall resistivity of SRO layers. These findings could launch further investigations into adaptive control of magnetoelectric properties in quantum oxide heterostructures using oxygen coordination. △ Less

Submitted 2 March, 2021; originally announced March 2021.

Room-temperature ferromagnetic insulating state in highly cation-ordered epitaxial oxide double perovskite

Authors: Changhee Sohn, Elizabeth Skoropata, Yongseong Choi, Xiang Gao, Ankur Rastogi, Amanda Huon, Michael A. McGuire, Lauren Nuckols, Yanwen Zhang, John W. Freeland, Daniel Haskel, Ho Nyung Lee

Abstract: Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeR… ▽ More Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeReO6. In contrast to the known ferromagnetic metallic phase in stoichiometric Sr2FeReO6, a FMI state with a high Curie temperature (Tc~400 K) and a large saturation magnetization (MS~1.8 μB/f.u.) is found in highly cation-ordered Fe-rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe3+-Fe3+ and Fe3+-Re6+ bonding states, which originate from the excess Fe. The emerging FMI state by controlling cations in the epitaxial oxide perovskites opens the door to developing novel oxide quantum materials & heterostructures. △ Less

Submitted 12 December, 2018; originally announced December 2018.

Electronic structure of negative charge transfer CaFeO3 across the metal-insulator transition

Authors: Paul C. Rogge, Ravini U. Chandrasena, Antonio Cammarata, Robert J. Green, Padraic Shafer, Benjamin M. Lefler, Amanda Huon, Arian Arab, Elke Arenholz, Ho Nyung Lee, Tien-Lin Lee, Slavomír Nemšák, James M. Rondinelli, Alexander X. Gray, Steven J. May

Abstract: We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functi… ▽ More We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functional calculations, we resolve the element-specific changes to the electronic structure across the metal-insulator transition. We demonstrate that the Fe electron valence undergoes no observable change between the metallic and insulating states, whereas the O electronic configuration undergoes significant changes. This strongly supports the bond-disproportionation model of the metal-insulator transition for CaFeO3 and highlights the importance of ligand holes in its electronic structure. By sensitively measuring the ligand hole density, however, we find that it increases by ~5-10% in the insulating state, which we ascribe to a further localization of electron charge on the Fe sites. These results provide detailed insight into the metal-insulator transition of negative charge transfer compounds and should prove instructive for understanding metal-insulator transitions in other late transition metal compounds such as the nickelates. △ Less

Submitted 1 February, 2018; v1 submitted 16 January, 2018; originally announced January 2018.

Comments: Minor typographic changes made

Journal ref: Phys. Rev. Mater. 2, 015002 (2018)