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Scalable production of single 2D van der Waals layers through atomic layer deposition: Bilayer silica on metal foils and films
Authors:
Gregory S. Hutchings,
Xin Shen,
Chao Zhou,
Petr Dementyev,
Daniil Naberezhnyi,
Inga Ennen,
Andreas Hütten,
Nassar Doudin,
Jesse Hsu,
Zachary S. Fishman,
Udo D. Schwarz,
Shu Hu,
Eric I. Altman
Abstract:
The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of SiO2 can be grown by ALD on Au and Pd polycrystalline foils and epitaxial films. The silica was deposited by two cycles of bis (diethylamino) silane and oxygen p…
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The self-limiting nature of atomic layer deposition (ALD) makes it an appealing option for growing single layers of two-dimensional van der Waals (2D-VDW) materials. In this paper it is demonstrated that a single layer of a 2D-VDW form of SiO2 can be grown by ALD on Au and Pd polycrystalline foils and epitaxial films. The silica was deposited by two cycles of bis (diethylamino) silane and oxygen plasma exposure at 525 K. Initial deposition produced a three-dimensionally disordered silica layer; however, subsequent annealing above 950 K drove a structural rearrangement resulting in 2D-VDW; this annealing could be performed at ambient pressure. Surface spectra recorded after annealing indicated that the two ALD cycles yielded close to the silica coverage obtained for 2D-VDW silica prepared by precision SiO deposition in ultra-high vacuum. Analysis of ALD-grown 2D-VDW silica on a Pd(111) film revealed the co-existence of amorphous and incommensurate crystalline 2D phases. In contrast, ALD growth on Au(111) films produced predominantly the amorphous phase while SiO deposition in UHV led to only the crystalline phase, suggesting that the choice of Si source can enable phase control.
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Submitted 12 January, 2022;
originally announced January 2022.
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Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices
Authors:
Robin-Pierre Klett,
Joachim Schönle,
Andreas Becker,
Denis Dyck,
Karsten Rott,
Jan Haskenhoff,
Jan Krieft,
Torsten Hübner,
Oliver Reimer,
Chandra Shekhar,
Jan-Michael Schmalhorst,
Andreas Hütten,
Claudia Felser,
Wolfgang Wernsdorfer,
Günter Reiss
Abstract:
Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We repo…
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Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak antilocalization and the weak links of the SQUID fully-gapped proximity induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2$π$ periodicity, possibly dominated by the bulk conductivity.
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Submitted 30 June, 2017;
originally announced June 2017.
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How to enable bulk-like martensitic transformation in epitaxial films
Authors:
Marius Wodniok,
Niclas Teichert,
Lars Helmich,
Andreas Hütten
Abstract:
The present study is dedicated to the influence of different substrate and buffer layer materials on the martensitic transformation in sputter deposited epitaxial shape memory Heusler alloys. For this, the magnetocaloric Heusler alloy Ni-Co-Mn-Al \cite{Teichert2015b} is grown on MgO(001), MgAl$_{2}$O$_{4}$(001), and MgO(001)/V substrates, which exhibit a lattice misfit to the Ni-Co-Mn-Al between…
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The present study is dedicated to the influence of different substrate and buffer layer materials on the martensitic transformation in sputter deposited epitaxial shape memory Heusler alloys. For this, the magnetocaloric Heusler alloy Ni-Co-Mn-Al \cite{Teichert2015b} is grown on MgO(001), MgAl$_{2}$O$_{4}$(001), and MgO(001)/V substrates, which exhibit a lattice misfit to the Ni-Co-Mn-Al between $-1.2\%$ and $3.6\%$. By temperature dependent X-ray diffraction measurements it is shown that the optimum buffer layer for shape memory Heusler films is not one with minimum lattice misfit, but one with minimum Young's modulus and moderate misfit because an elastic buffer layer can deform during the martensitic transformation of the Heusler layer. Furthermore, epitaxial strain caused by a moderate lattice misfit does not significantly change the martensitic transformation temperatures.
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Submitted 19 December, 2016;
originally announced December 2016.
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Quantitative separation of the anisotropic magnetothermopower and planar Nernst effect by the rotation of an in-plane thermal gradient
Authors:
Oliver Reimer,
Daniel Meier,
Michel Bovender,
Lars Helmich,
Jan-Oliver Dreessen,
Jan Krieft,
Anatoly S. Shestakov,
Christian H. Back,
Jan-Michael Schmalhorst,
Andreas Hütten,
Günter Reiss,
Timo Kuschel
Abstract:
A thermal gradient as the driving force for spin currents plays a key role in spin caloritronics. In this field the spin Seebeck effect (SSE) is of major interest and was investigated in terms of in-plane thermal gradients inducing perpendicular spin currents (transverse SSE) and out-of-plane thermal gradients generating parallel spin currents (longitudinal SSE). Up to now all spincaloric experime…
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A thermal gradient as the driving force for spin currents plays a key role in spin caloritronics. In this field the spin Seebeck effect (SSE) is of major interest and was investigated in terms of in-plane thermal gradients inducing perpendicular spin currents (transverse SSE) and out-of-plane thermal gradients generating parallel spin currents (longitudinal SSE). Up to now all spincaloric experiments employ a spatially fixed thermal gradient. Thus anisotropic measurements with respect to well defined crystallographic directions were not possible. Here we introduce a new experiment that allows not only the in-plane rotation of the external magnetic field, but also the rotation of an in-plane thermal gradient controlled by optical temperature detection. As a consequence, the anisotropic magnetothermopower and the planar Nernst effect in a permalloy thin film can be measured simultaneously and reveal a phase shift, that allows the quantitative separation of the thermopower, the anisotropic magnetothermopower and the planar Nernst effect.
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Submitted 28 September, 2016;
originally announced September 2016.
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Vanadium sacrificial layers as a novel approach for the fabrication of freestanding Heusler Shape Memory Alloys
Authors:
Lars Helmich,
Niclas Teichert,
Walid Hetaba,
Anna Behler,
Anja Waske,
Svetlana Klimova,
Andreas Huetten
Abstract:
In this study we report a method for the preparation of freestanding magnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn, Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared via sputter deposition. A sacrificial vanadium layer is added between the substrate and the Heusler film. By means of selective wet-chemical etching the vanadium layer can be removed. Conditions for the crystallization…
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In this study we report a method for the preparation of freestanding magnetocaloric thin films. Non-stoichiometric Heusler alloys Ni-Mn-Sn, Ni-Co-Mn-Sn and Ni-Co-Mn-Al are prepared via sputter deposition. A sacrificial vanadium layer is added between the substrate and the Heusler film. By means of selective wet-chemical etching the vanadium layer can be removed. Conditions for the crystallization of Vanadium layers and epitaxial growth of the Heusler films are indicated. Magnetic and structural properties of freestanding and as-prepared films are compared in detail. The main focus of this study is on the influence of substrate constraints on the Martensitic transistion.
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Submitted 10 March, 2015;
originally announced March 2015.
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Exchange bias effect in martensitic epitaxial Ni-Mn-Sn thin films applied to pin CoFeB/MgO/CoFeB magnetic tunnel junctions
Authors:
Niclas Teichert,
Alexander Boehnke,
Anna Behler,
Bruno Weise,
Anja Waske,
Andreas Hütten
Abstract:
The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a uni…
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The exchange bias effect is commonly used to shift the coercive field of a ferromagnet. This technique is crucial for the use of magnetic tunnel junctions as logic or memory devices. Therefore, an independent switching of the two ferromagnetic electrodes is necessary to guarantee a reliable readout. Here, we demonstrate that the intrinsic exchange bias effect of Ni-Mn-Sn can be used to apply a unidirectional anisotropy to magnetic tunnel junctions. For this, we use epitaxial Ni-Mn-Sn films as pinning layers for microfabricated CoFeB/MgO/CoFeB magnetic tunnel junctions. We compare the exchange bias field ($H_{\text{EB}}$) measured after field cooling in $-10$\,kOe external field by magnetization measurements with $H_{\text{EB}}$ obtained from tunnel magnetoresistance measurements. Consistent for both methods we find an exchange bias of about $H_{\text{EB}}=130$\,Oe at 10\,K, which decreases with increasing temperature and vanishes above 70\,K.
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Submitted 7 May, 2015; v1 submitted 2 March, 2015;
originally announced March 2015.
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Structure and Giant Inverse Magnetocaloric Effect of Epitaxial Ni-Co-Mn-Al Films
Authors:
Niclas Teichert,
Daniel Kucza,
Oguz Yildirim,
Ercument Yüzüak,
Ilker Dincer,
Anna Behler,
Bruno Weise,
Lars Helmich,
Alexander Boehnke,
Svetlana Klimova,
Anja Waske,
Yalcin Elerman,
Andreas Hütten
Abstract:
The structural, magnetic, and magnetocaloric properties of epitaxial Ni-Co-Mn-Al thin films with different compositions have been studied. The films were deposited on MgO(001) substrates by co-sputtering on heated substrates. All films show a martensitic transformation, where the transformation temperatures are strongly dependent on the composition. The structure of the martensite phase is shown t…
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The structural, magnetic, and magnetocaloric properties of epitaxial Ni-Co-Mn-Al thin films with different compositions have been studied. The films were deposited on MgO(001) substrates by co-sputtering on heated substrates. All films show a martensitic transformation, where the transformation temperatures are strongly dependent on the composition. The structure of the martensite phase is shown to be 14M. The metamagnetic martensitic transformation occurs from strongly ferromagnetic austenite to weakly magnetic martensite. The structural properties of the films were investigated by atomic force microscopy and temperature dependent X-ray diffraction. Magnetic and magnetocaloric properties were analyzed using temperature dependent and isothermal magnetization measurements. We find that Ni$_{41}$Co$_{10.4}$Mn$_{34.8}$Al$_{13.8}$ films show giant inverse magnetocaloric effects with magnetic entropy change of 17.5\,J\,kg$^{-1}$K$^{-1}$ for $μ_0 ΔH=5\,\text{T}$.
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Submitted 7 May, 2015; v1 submitted 30 October, 2014;
originally announced October 2014.
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Experimental realization of a semiconducting full Heusler compound: Fe2TiSi
Authors:
Markus Meinert,
Manuel P. Geisler,
Jan Schmalhorst,
Ulrich Heinzmann,
Elke Arenholz,
Walid Hetaba,
Michael Stöger-Pollach,
Andreas Hütten,
Günter Reiss
Abstract:
Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disor…
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Single-phase films of the full Heusler compound Fe2TiSi have been prepared by magnetron sputtering. The compound is found to be a semiconductor with a gap of 0.4eV. The electrical resistivity has a logarithmic temperature dependence up to room temperature due to Kondo scattering of a dilute free electron gas off superparamagnetic impurities. The origin of the electron gas is extrinsic due to disorder or off-stoichiometry. Density functional theory calculations of the electronic structure are in excellent agreement with electron energy loss, optical, and x-ray absorption experiments. Fe2TiSi may find applications as a thermoelectric material.
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Submitted 24 February, 2014;
originally announced February 2014.
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Landau levels, edge states, and strained magnetic waveguides in graphene monolayers with enhanced spin-orbit interaction
Authors:
A. De Martino,
A. Hütten,
R. Egger
Abstract:
The electronic properties of a graphene monolayer in a magnetic and a strain-induced pseudo-magnetic field are studied in the presence of spin-orbit interactions (SOI) that are artificially enhanced, e.g., by suitable adatom deposition. For the homogeneous case, we provide analytical results for the Landau level eigenstates for arbitrary intrinsic and Rashba SOI, including also the Zeeman field. T…
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The electronic properties of a graphene monolayer in a magnetic and a strain-induced pseudo-magnetic field are studied in the presence of spin-orbit interactions (SOI) that are artificially enhanced, e.g., by suitable adatom deposition. For the homogeneous case, we provide analytical results for the Landau level eigenstates for arbitrary intrinsic and Rashba SOI, including also the Zeeman field. The edge states in a semi-infinite geometry are studied in the absence of the Rashba term. For a critical value of the magnetic field, we find a quantum phase transition separating two phases with spin-filtered helical edge states at the Dirac point. These phases have opposite spin current direction. We also discuss strained magnetic waveguides with inhomogeneous field profiles that allow for chiral snake orbits. Such waveguides are practically immune to disorder-induced backscattering, and the SOI provides non-trivial spin texture to these modes.
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Submitted 13 October, 2011; v1 submitted 20 July, 2011;
originally announced July 2011.
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Magnetic scattering of Dirac fermions in topological insulators and graphene
Authors:
A. Zazunov,
A. Kundu,
A. Hütten,
R. Egger
Abstract:
We study quantum transport and scattering of massless Dirac fermions by spatially localized static magnetic fields. The employed model describes in a unified manner the effects of orbital magnetic fields, Zeeman and exchange fields in topological insulators, and the pseudo-magnetic fields caused by strain or defects in monolayer graphene. The general scattering theory is formulated, and for radial…
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We study quantum transport and scattering of massless Dirac fermions by spatially localized static magnetic fields. The employed model describes in a unified manner the effects of orbital magnetic fields, Zeeman and exchange fields in topological insulators, and the pseudo-magnetic fields caused by strain or defects in monolayer graphene. The general scattering theory is formulated, and for radially symmetric fields, the scattering amplitude and the total and transport cross sections are expressed in terms of phase shifts. As applications, we study ring-shaped magnetic fields (including the Aharanov-Bohm geometry) and scattering by magnetic dipoles.
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Submitted 30 July, 2010;
originally announced July 2010.
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Inverted spin polarization of Heusler alloys for new spintronic devices
Authors:
Andy Thomas,
Dirk Meyners,
Daniel Ebke,
Ning-Ning Liu,
Marc D. Sacher,
Jan Schmalhorst,
Guenter Reiss,
Hubert Ebert,
Andreas Huetten
Abstract:
A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative TMR values at different bias voltages at room temperature which generally adds an additional degree of freedom to all spintronic devices.
A new magnetic logic overcomes the major limitations of field programmable gate arrays while having a 50% smaller unit cell than conventional designs utilizing magnetic tunnel junctions with one Heusler alloy electrode. These show positive and negative TMR values at different bias voltages at room temperature which generally adds an additional degree of freedom to all spintronic devices.
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Submitted 23 March, 2006;
originally announced March 2006.
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Evidence for Kondo Effect in Au80Co20 Ribbons
Authors:
D. S. Geoghegan,
A. Huetten,
K. -H. Mueller,
L. Schultz
Abstract:
A minimum in resistivity as a function of temperature for an as-quenched Au80Co20 ribbon prepared by melt-spinning using a wheel surface speed of 20 m s^{-1} is found at 25 K. No resistivity minimum is found for an as-quenched ribbon using a wheel surface speed of 60 m s^{-1}, however, upon heat treatment of this ribbon a resistivity minimum is recovered. The temperature of the minimum decreases…
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A minimum in resistivity as a function of temperature for an as-quenched Au80Co20 ribbon prepared by melt-spinning using a wheel surface speed of 20 m s^{-1} is found at 25 K. No resistivity minimum is found for an as-quenched ribbon using a wheel surface speed of 60 m s^{-1}, however, upon heat treatment of this ribbon a resistivity minimum is recovered. The temperature of the minimum decreases with increasing total time of heat treatment. These observations are interpretted as evidence for the microstructural control of the Kondo effect typically found in dilute magnetic alloys in a giant magnetoresistance granular material.
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Submitted 3 March, 1997;
originally announced March 1997.
