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Thermal Conductivity of Oxide Tunnel Barriers in Magnetic Tunnel Junctions Measured by Ultrafast Thermoreflectance and Magneto-optic Kerr Effect Thermometry
Authors:
Hyejin Jang,
Luca Marnitz,
Torsten Huebner,
Johannes Kimling,
Timo Kuschel,
David G. Cahill
Abstract:
Spin-dependent charge transport in magnetic tunnel junctions (MTJs) can be manipulated by a temperature gradient, which can be utilized for spintronic and spin caloritronic applications. Evaluation of the thermally induced phenomena requires knowledge of the temperature differences across the oxide tunnel barrier adjacent to the ferromagnetic (FM) leads. However, it is challenging to accurately me…
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Spin-dependent charge transport in magnetic tunnel junctions (MTJs) can be manipulated by a temperature gradient, which can be utilized for spintronic and spin caloritronic applications. Evaluation of the thermally induced phenomena requires knowledge of the temperature differences across the oxide tunnel barrier adjacent to the ferromagnetic (FM) leads. However, it is challenging to accurately measure thermal properties of an oxide tunnel barrier consisting of only a few atomic layers. In this work, we experimentally interrogate the temperature evolutions in Ru/oxide/FM/seed/MgO (oxide=MgO, MgAl2O4; FM=Co, CoFeB; seed=Pt, Ta) structures having perpendicular magnetic anisotropy using ultrafast thermometry. The Ru layer is optically thick and heated by ultrafast laser pulses; the subsequent temperature changes are monitored using thermoreflectance of Ru and magneto-optic Kerr effect (MOKE) of the FM layers. We independently measure the response times of Co and CoFeB magnetism using quadratic MOKE and obtain τem=0.2 ps for Co and 2 ps for CoFeB. These time scales are much shorter than the time scale of heat transport through the oxide tunnel barrier, which occurs at 10-3000 ps. We determine effective thermal conductivities of MgO and MgAl2O4 tunnel barriers in the range of 0.4-0.6 W m-1 K-1, comparable to an estimate of the series conductance of the Ru/oxide and oxide/FM interfaces and an order of magnitude smaller than the thermal conductivity of MgO thin films. We find that the electron-phonon thermal conductance near the tunnel barrier is only a factor of 5-12 larger than the thermal conductance of the oxide tunnel barrier. Therefore, the drop in the electronic temperature is approximately 20-30% larger than the drop in the phonon temperature across the tunnel barrier.
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Submitted 7 December, 2019;
originally announced December 2019.
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Correlation of tunnel magnetoresistance with the magnetic properties in perpendicular CoFeB-based junctions with exchange bias
Authors:
Orestis Manos,
Panagiota Bougiatioti,
Denis Dyck,
Torsten Huebner,
Karsten Rott,
Jan-Michael Schmalhorst,
Günter Reiss
Abstract:
We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB…
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We investigate the dependence of magnetic properties on the post-annealing temperature/time, the thickness of soft ferromagnetic electrode and Ta dusting layer in the pinned electrode as well as their correlation with the tunnel magnetoresistance ratio, in a series of perpendicular magnetic tunnel junctions of materials sequence Ta/Pd/IrMn/CoFe/Ta$(\textit{x})$/CoFeB/MgO$(\textit{y})$/CoFeB$(\textit{z})$/Ta/Pd. We obtain a large perpendicular exchange bias of 79.6$\,$kA/m for $x=0.3\,$nm. For stacks with $z=1.05\,$nm, the magnetic properties of the soft electrode resemble the characteristics of superparamagnetism. For stacks with $x=0.4\,$nm, $y=2\,$nm, and $z=1.20\,$nm, the exchange bias presents a significant decrease at post annealing temperature $T_\textrm{ann}=330\,^{\circ}$C for 60 min, while the interlayer exchange coupling and the saturation magnetization per unit area sharply decay at $T_\textrm{ann}=340\,^{\circ}$C for 60 min. Simultaneously, the tunnel magnetoresistance ratio shows a peak of $65.5\%$ after being annealed at $T_\textrm{ann}=300\,^{\circ}$C for 60 min, with a significant reduction down to $10\%$ for higher annealing temperatures ($T_\textrm{ann}\geq330\,^{\circ}$C) and down to $14\%$ for longer annealing times ($T_\textrm{ann}=300\,^{\circ}$C for 90 min). We attribute the large decrease of tunnel magnetoresistance ratio to the loss of exchange bias in the pinned electrode.
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Submitted 5 October, 2018; v1 submitted 22 February, 2018;
originally announced February 2018.
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Thermal conductivity of thin insulating films determined by tunnel magneto-Seebeck effect measurements and finite-element modeling
Authors:
Torsten Huebner,
Ulrike Martens,
Jakob Walowski,
Markus Münzenberg,
Andy Thomas,
Günter Reiss,
Timo Kuschel
Abstract:
In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl…
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In general, it is difficult to access the thermal conductivity of thin insulating films experimentally just by electrical means. Here, we present a new approach utilizing the tunnel magneto-Seebeck effect (TMS) in combination with finite-element modeling (FEM). We detect the laser-induced TMS and the absolute thermovoltage of laser-heated magnetic tunnel junctions with 2.6 nm thin barriers of MgAl$_2$O$_4$ (MAO) and MgO, respectively. A second measurement of the absolute thermovoltage after a dielectric breakdown of the barrier grants insight into the remaining thermovoltage of the stack. Thus, the pure TMS without any parasitic Nernst contributions from the leads can be identified. In combination with FEM via COMSOL, we are able to extract values for the thermal conductivity of MAO ($0.7$ W/(K$\cdot$m)) and MgO ($5.8$ W/(K$\cdot$m)), which are in very good agreement with theoretical predictions. Our method provides a new promising way to extract the experimentally challenging parameter of the thermal conductivity of thin insulating films.
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Submitted 7 February, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Anomalous Nernst effect on the nanometer scale: Exploring three-dimensional temperature gradients in magnetic tunnel junctions
Authors:
Ulrike Martens,
Torsten Huebner,
Henning Ulrichs,
Oliver Reimer,
Timo Kuschel,
Ronnie R. Tamming,
Chia-Lin Chang,
Raanan I. Tobey,
Andy Thomas,
Markus Münzenberg,
Jakob Walowski
Abstract:
Localized laser heating creates temperature gradients in all directions and thus leads to three-dimensional electron flux in metallic materials. Temperature gradients in combination with material magnetization generate thermomagnetic voltages. The interplay between these direction-dependent temperature gradients and the magnetization along with their control enable to manipulate the generated volt…
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Localized laser heating creates temperature gradients in all directions and thus leads to three-dimensional electron flux in metallic materials. Temperature gradients in combination with material magnetization generate thermomagnetic voltages. The interplay between these direction-dependent temperature gradients and the magnetization along with their control enable to manipulate the generated voltages, e.g. in magnetic nanodevices. We identify the anomalous Nernst effect (ANE) generated on a nanometer length scale by micrometer sized temperature gradients in magnetic tunnel junctions (MTJs). In a systematic study, we extract the ANE by analyzing the influence of in-plane temperature gradients on the tunnel magneto-Seebeck effect (TMS) in three dimensional devices. To investigate these effects, we utilize in-plane magnetized MTJs based on CoFeB electrodes with an MgO tunnel barrier. Due to our measurement configuration, there is no necessity to disentangle the ANE from the spin Seebeck effect in inverse spin-Hall measurements. The temperature gradients are created by a tightly focused laser spot. The spatial extent of the measured effects is defined by the MTJ size, while the spatial resolution is given by the laser spot size and the step size of its lateral translation. This method is highly sensitive to low voltages and yields an ANE coefficient of $K_N\approx 1.6\cdot 10^{-8}\,\mathrm{V/TK}$ for CoFeB. In general, TMS investigations in MTJs are motivated by the usage of otherwise wasted heat in magnetic memory devices for read/write operations. Here, the additionally generated ANE effect allows to expand the MTJs' functionality from simple memory storage to nonvolatile logic devices and opens new application fields such as direction dependent temperature sensing with the potential for further downscaling.
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Submitted 12 January, 2018;
originally announced January 2018.
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Large magneto-Seebeck effect in magnetic tunnel junctions with half-metallic Heusler electrodes
Authors:
Alexander Boehnke,
Ulrike Martens,
Christian Sterwerf,
Alessia Niesen,
Torsten Huebner,
Marvin von der Ehe,
Markus Meinert,
Timo Kuschel,
Andy Thomas,
Christian Heiliger,
Markus Münzenberg,
Günter Reiss
Abstract:
Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck volt…
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Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted heat in electronic devices useable or to provide new read-out mechanisms for information. However, only few materials have been studied so far with Seebeck voltages of only some μV, which hampers applications. Here, we demonstrate that half-metallic Heusler compounds are hot candidates for enhancing spin-dependent thermoelectric effects. This becomes evident when considering the asymmetry of the spin-split density of electronic states around the Fermi level that determines the spin-dependent thermoelectric transport in magnetic tunnel junctions. We identify Co$_2$FeAl and Co$_2$FeSi Heusler compounds as ideal due to their energy gaps in the minority density of states, and demonstrate devices with substantially larger Seebeck voltages and tunnel magneto-Seebeck effect ratios than the commonly used Co-Fe-B based junctions.
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Submitted 20 November, 2017; v1 submitted 3 July, 2017;
originally announced July 2017.
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Proximity-induced superconductivity and quantum interference in topological crystalline insulator SnTe thin film devices
Authors:
Robin-Pierre Klett,
Joachim Schönle,
Andreas Becker,
Denis Dyck,
Karsten Rott,
Jan Haskenhoff,
Jan Krieft,
Torsten Hübner,
Oliver Reimer,
Chandra Shekhar,
Jan-Michael Schmalhorst,
Andreas Hütten,
Claudia Felser,
Wolfgang Wernsdorfer,
Günter Reiss
Abstract:
Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We repo…
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Topological crystalline insulators represent a new state of matter, in which the electronic transport is governed by mirror-symmetry protected Dirac surface states. Due to the helical spin-polarization of these surface states, the proximity of topological crystalline matter to a nearby superconductor is predicted to induce unconventional superconductivity and thus to host Majorana physics. We report on the preparation and characterization of Nb-based superconducting quantum interference devices patterned on top of topological crystalline insulator SnTe thin films. The SnTe films show weak antilocalization and the weak links of the SQUID fully-gapped proximity induced superconductivity. Both properties give a coinciding coherence length of 120 nm. The SQUID oscillations induced by a magnetic field show 2$π$ periodicity, possibly dominated by the bulk conductivity.
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Submitted 30 June, 2017;
originally announced June 2017.
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Enhancement of thermovoltage and tunnel magneto-Seebeck effect in CoFeB based magnetic tunnel junctions by variation of the MgAl$_2$O$_4$ and MgO barrier thickness
Authors:
Torsten Huebner,
Ulrike Martens,
Jakob Walowski,
Alexander Boehnke,
Jan Krieft,
Christian Heiliger,
Andy Thomas,
Günter Reiss,
Timo Kuschel,
Markus Münzenberg
Abstract:
We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct maximum in the tunnel magneto-Seebeck effect for 2.6nm barrier thickness. This maximum is independently measured for two barrier materials, namely MgAl$_2$O$_4$ and M…
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We investigate the influence of the barrier thickness of Co$_{40}$Fe$_{40}$B$_{20}$ based magnetic tunnel junctions on the laser-induced tunnel magneto-Seebeck effect. Varying the barrier thickness from 1nm to 3nm, we find a distinct maximum in the tunnel magneto-Seebeck effect for 2.6nm barrier thickness. This maximum is independently measured for two barrier materials, namely MgAl$_2$O$_4$ and MgO. Additionally, samples with an MgAl$_2$O$_4$ barrier exhibit a high thermovoltage of more than 350$μ$V in comparison to 90$μ$V for the MTJs with MgO barrier when heated with the maximum laser power of 150mW. Our results allow for the fabrication of improved stacks when dealing with temperature differences across magnetic tunnel junctions for future applications in spin caloritronics, the emerging research field that combines spintronics and themoelectrics.
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Submitted 26 June, 2017;
originally announced June 2017.
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Pumping laser excited spins through MgO barriers
Authors:
Ulrike Martens,
Jakob Walowski,
Thomas Schumann,
Maria Mansurova,
Alexander Boehnke,
Torsten Huebner,
Günter Reiss,
Andy Thomas,
Markus Münzenberg
Abstract:
We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the MTJs layer stack are created using laser heating. Using this method, the temperature can be controlled on the micrometer length scale: here, we investigate, how b…
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We present a study of the tunnel magneto-Seebeck (TMS) effect in MgO based magnetic tunnel junctions (MTJs). The electrodes consist of CoFeB with in-plane magnetic anisotropy. The temperature gradients which generate a voltage across the MTJs layer stack are created using laser heating. Using this method, the temperature can be controlled on the micrometer length scale: here, we investigate, how both, the TMS voltage and the TMS effect, depend on the size, position and intensity of the applied laser spot. For this study, a large variety of different temperature distributions was created across the junction. We recorded two-dimensional maps of voltages generated by heating in dependence of the laser spot position and the corresponding calculated TMS values. The voltages change in value and sign, from large positive values when heating the MTJ directly in the centre to small values when heating the junction on the edges and even small negative values when heating the sample away from the junction. Those zero crossings lead to very high calculated TMS ratios. Our systematic analysis shows, that the distribution of the temperature gradient is essential, to achieve high voltage signals and reasonable resulting TMS ratios. Furthermore, artefacts on the edges produce misleading results, but also open up further possibilities of more complex heating scenarios for spincaloritronics in spintronic devices.
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Submitted 16 February, 2017;
originally announced February 2017.
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Comparison of laser induced and intrinsic tunnel magneto-Seebeck effect in CoFeB/MgAl$_2$O$_4$ and CoFeB/MgO magnetic tunnel junctions
Authors:
Torsten Huebner,
Alexander Boehnke,
Ulrike Martens,
Andy Thomas,
Jan-Michael Schmalhorst,
Günter Reiss,
Markus Münzenberg,
Timo Kuschel
Abstract:
We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the…
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We present a comparison of the tunnel magneto-Seebeck effect for laser induced and intrinsic heating. Therefore, Co$_{40}$Fe$_{40}$B$_{20}$/MgAl$_2$O$_4$ and Co$_{25}$Fe$_{55}$B$_{20}$/MgO magnetic tunnel junctions have been prepared. The TMS ratio of 3\,\% in case of the MAO MTJ agrees well with ratios found for other barrier materials, while the TMS ratio of 23\,\% of the MgO MTJ emphasizes the influence of the CoFe composition. We find results using the intrinsic method that differ in sign and magnitude in comparison to the results of the laser heating. The intrinsic contributions can alternatively be explained by the Brinkman model and the given junction properties. Especially, we are able to demonstrate that the symmetric contribution is solely influenced by the barrier asymmetry. Thus, we conclude that the symmetry analysis used for the intrinsic method is not suitable to unambiguously identify an intrinsic tunnel magneto-Seebeck effect.
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Submitted 1 July, 2016; v1 submitted 26 April, 2016;
originally announced April 2016.
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Phase separation in Fe2CrSi thin films
Authors:
Markus Meinert,
Torsten Hübner,
Jan Schmalhorst,
Günter Reiss,
Elke Arenholz
Abstract:
Thin films of a nominal Fe2CrSi alloy have been deposited by magnetron co-sputtering with various heat treatments on MgO and MgAl2O4 substrates. After heat treatment, the films were found to decompose into a nearly epitaxial Fe3Si film with the D0$_3$ structure and Cr3Si precipitates with the A15 structure. We explain the experimental results on the basis of ab initio calculations, which reveal th…
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Thin films of a nominal Fe2CrSi alloy have been deposited by magnetron co-sputtering with various heat treatments on MgO and MgAl2O4 substrates. After heat treatment, the films were found to decompose into a nearly epitaxial Fe3Si film with the D0$_3$ structure and Cr3Si precipitates with the A15 structure. We explain the experimental results on the basis of ab initio calculations, which reveal that this decomposition is energetically highly favorable.
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Submitted 9 February, 2014; v1 submitted 17 July, 2013;
originally announced July 2013.
