Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed
Authors:
Y. -T. Tsai,
C. -R. Liu,
Y. -T. Chen,
S. -M. Wang,
Z. -K. Chen,
C. -S. Pai,
Z. -R. Haung,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee,
Y. -T. Tang
Abstract:
In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain swi…
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In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain switching speed. However, no significant benefit was observed at electric fields less than 1 MV/cm. This is because at low voltage operation, the defective resistance (dead layer) within the interface prevents electron migration and the increased RC delay. Minimizing interface defects will be an important key to extending endurance and retention.
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Submitted 10 July, 2023;
originally announced July 2023.
