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Physical Insights of Low Thermal Expansion Coefficient Electrode Stress Effect on Hafnia-Based Switching Speed
Authors:
Y. -T. Tsai,
C. -R. Liu,
Y. -T. Chen,
S. -M. Wang,
Z. -K. Chen,
C. -S. Pai,
Z. -R. Haung,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee,
Y. -T. Tang
Abstract:
In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain swi…
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In this report, we investigate the effect of low coefficient of thermal expansion (CTE) metals on the operating speed of hafnium-based oxide capacitance. We found that the cooling process of low CTE metals during rapid thermal annealing (RTA) generates in-plane tensile stresses in the film, This facilitates an increase in the volume fraction of the o-phase and significantly improves the domain switching speed. However, no significant benefit was observed at electric fields less than 1 MV/cm. This is because at low voltage operation, the defective resistance (dead layer) within the interface prevents electron migration and the increased RC delay. Minimizing interface defects will be an important key to extending endurance and retention.
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Submitted 10 July, 2023;
originally announced July 2023.
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First-principles Calculations of High Thermal Conductivity in Germanium Carbide Channel Materials
Authors:
S. -C. Lee,
Y. -T. Chen,
C. -R. Liu,
S. -M. Wang,
Y. -T. Tang,
F. -S. Chang,
Z. -X. Li,
K. -Y. Hsiang,
M. -H. Lee
Abstract:
Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the therma…
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Silicon carbide (SiC) has become a popular material for next-generation power components due to its smaller size, faster switching speed, simpler cooling and greater reliability than Si-MOSFETs. With this in mind, we are thinking about whether the replacement of Si-base with Germanium Carbide(GeC) will also have good performance. This work explains the heat transfer of GeC by simulating the thermal conductivity through molecular dynamics (MD) and proposes a potential 4H-GeC power MOSFET with wide bandgap and high thermal conductivity to replace Si-MOSFETs.
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Submitted 1 June, 2023;
originally announced July 2023.
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The electronic and transport properties of a molecular junction studied by an integrated piecewise thermal equilibrium approach
Authors:
M. -H. Tsai,
T. -H. Lu,
Y. -H. Tang
Abstract:
An integrated piecewise thermal equilibrium approach based on the first-principles calculation method has been developed to calculate bias dependent electronic structures and current- and differential conductance-voltage characteristics of the gold-benzene-1,4-dithiol-gold molecular junction. The calculated currents and differential conductance have the same order of magnitude as experimental on…
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An integrated piecewise thermal equilibrium approach based on the first-principles calculation method has been developed to calculate bias dependent electronic structures and current- and differential conductance-voltage characteristics of the gold-benzene-1,4-dithiol-gold molecular junction. The calculated currents and differential conductance have the same order of magnitude as experimental ones. An electron transfer was found between the two electrodes when a bias is applied, which renders the two electrodes to have different local electronic structures. It was also found that when Au 5d electrons were treated as core electrons the calculated currents were overestimated, which can be understood as an underestimate of the Au-S covalent bonding and consequently the contact potential barrier and the replacement of delocalized Au 5d carriers by more itinerant delocalized Au 6sp carriers in the electrodes.
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Submitted 4 June, 2008; v1 submitted 30 May, 2008;
originally announced May 2008.
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Electronic and Magnetic Properties of Sr and Ca Doped Lanthanum Manganites from First-Principles
Authors:
M. -H. Tsai,
Y. -H. Tang,
H. Chou,
W. T. Wu
Abstract:
The complicated electronic, magnetic, and colossal magnetoresistant (CMR) properties of Sr and Ca doped lanthanum manganites can be understood by spin-polarized first-principles calculations. The electronic properties can be attributed to a detailed balancing between Sr and Ca induced metal-like O 2p and majority-spin (majority-spin) Mn eg delocalized states and the insulator-like minority-spin…
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The complicated electronic, magnetic, and colossal magnetoresistant (CMR) properties of Sr and Ca doped lanthanum manganites can be understood by spin-polarized first-principles calculations. The electronic properties can be attributed to a detailed balancing between Sr and Ca induced metal-like O 2p and majority-spin (majority-spin) Mn eg delocalized states and the insulator-like minority-spin (minority-spin) Mn t2g band near the Fermi level (EF). The magnetic properties can be attributed to a detailed balancing between O mediated antiferromagnetic superexchange and delocalized majority-spin Mn eg-state mediated ferromagnetic spin-spin couplings. While CMR can be attributed to the lining up of magnetic domains trigged by the applied magnetic field, which suppresses the trapping ability of the empty Mn t2g states that resists the motion of conducting Mn majority-spin eg electrons.
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Submitted 13 April, 2006;
originally announced April 2006.
