-
Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified $^{13}$C graphene
Authors:
Vincent Strenzke,
Jana M. Meyer,
Isabell Grandt-Ionita,
Marta Prada,
Hyun-Seok Kim,
Martin Heilmann,
Joao Marcelo J. Lopes,
Lars Tiemann,
Robert H. Blick
Abstract:
The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to s…
▽ More
The hyperfine interaction between the spins of electrons and nuclei is both a blessing and a curse. It can provide a wealth of information when used as an experimental probing technique but it can also be destructive when it acts as a dephasive perturbation on the electronic system. In this work, we fabricated large scale single and multilayer isotopically-purified $^{13}$C graphene Hall bars to search for interaction effects between the nuclear magnetic moments and the electronic system. We find signatures of nuclei with a spin in the analysis of the weak localization phenomenon that shows a significant dichotomy in the scattering times of monolayer $^{12}$C and $^{13}$C graphene close the Dirac point. Microwave-induced electron spin flips were exploited to transfer momentum to the nuclei and build-up a nuclear field. The presence of a very weak nuclear field is encoded in a modulation of the electron Zeeman energy which shifts the energy for resonant absorption and reduces the $g$-factor.
△ Less
Submitted 11 February, 2022;
originally announced February 2022.
-
Conduction Mechanisms in Epitaxial NiO/Graphene Gas Sensors
Authors:
Somayeh Saadat Niavol,
Melanie Budde,
Alexandra Papadogianni,
Martin Heilmann,
Hossain Milani Moghaddam,
Celso M. Aldao,
Giovanni Ligorio,
Emil J. W. List-Kratochvil,
Joao Marcelo J. Lopes,
Nicolae Barsan,
Oliver Bierwagen,
Federico Schipani
Abstract:
Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the…
▽ More
Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in environmental pollution monitoring can be realized with graphene-based materials. Here we show that, single layer graphene grown on SiC can be utilized to implement sensor devices being extremely sensitive towards NO2 showing an n-type response. A second type of sensor with an added NiO layer on top of the single layer graphene changed its response to p-type but did not reduce its sensitivity. We show that the conduction switch from n-type to p-type was not a consequence of an alteration of the graphene layer but is found to be an effect of the NiO layer. We find that the NiO leads to lowering of the Fermi level to a point that a crossing of the Dirac Point in the graphene switched the conduction type. These sensors were tested in the 100 ppb NO2 regime, showing good response and a detection limit extrapolated to be below 1 ppb. This new NiO/graphene/SiC configuration can be an attractive p-type sub-ppb sensor platform for NO2 and related gases.
△ Less
Submitted 6 October, 2020;
originally announced October 2020.
-
Selective-area van der Waals epitaxy of h-BN/graphene heterostructures via He$^{+}$ irradiation-induced defect-engineering in 2D substrates
Authors:
Martin Heilmann,
Victor Deinhart,
Abbes Tahraoui,
Katja Höflich,
J. Marcelo J. Lopes
Abstract:
The combination of two-dimensional (2D) materials into heterostructures enabled the formation of atomically thin devices with designed properties. To achieve a high density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is still problematic in terms of scaling…
▽ More
The combination of two-dimensional (2D) materials into heterostructures enabled the formation of atomically thin devices with designed properties. To achieve a high density, bottom-up integration, the growth of these 2D heterostructures via van der Waals epitaxy (vdWE) is an attractive alternative to the currently mostly employed mechanical transfer, which is still problematic in terms of scaling and reproducibility. However, controlling the location of the nuclei formation remains a key challenge in vdWE. Here, we use a focused He ion beam for a deterministic placement of defects in graphene substrates, which act as preferential nucleation sites for the growth of insulating, 2D hexagonal boron nitride (h-BN). We demonstrate a mask-free, selective-area vdWE (SAvdWE), where nucleation yield and crystal quality of h-BN is controlled by the ion beam parameter used for the defect formation. Moreover, we show that h-BN grown via SAvdWE has electron tunneling characteristics comparable to those of mechanically transferred layers, thereby lying the foundation for a reliable, high density array fabrication of 2D heterostructures for device integration via defect engineering in 2D substrates.
△ Less
Submitted 29 September, 2020;
originally announced September 2020.
