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Revealing nanoscale disorder in W/CoFeB/MgO ultra-thin films using domain wall motion
Authors:
Johannes Wilhelmus van der Jagt,
Vincent Jeudy,
André Thiaville,
Mamour Sall,
Nicolas Vernier,
Liza Herrera Diez,
Mohamed Belmeguenai,
Yves Roussigné,
Salim M. Chérif,
Mouad Fattouhi,
Luis Lopez-Diaz,
Alessio Lamperti,
Roméo Juge,
Dafiné Ravelosona
Abstract:
Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process…
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Disorder in ultra-thin magnetic films can significantly hinder domain wall motion. One of the main issues on the path towards efficient domain wall based devices remains the characterization of the pinning landscape at the nanoscale. In this paper, we study domain wall motion in W/CoFeB/MgO thin films with perpendicular magnetic anisotropy crystallized by annealing at 400$^{\circ}$C and a process based on He$^{+}$ irradiation combined with elevated temperatures. Magnetic properties are similar for the whole series of samples, while the magnetic domain wall mobility is critically improved in the irradiated samples. By using an analytical model to extract nanoscale pinning parameters, we reveal important variations in the disorder of the crystallized samples. This work offers a unique opportunity to selectively analyze the effects of disorder on the domain wall dynamics, without the contribution of changes in the magnetic properties. Our results highlight the importance of evaluating the nanoscale pinning parameters of the material when designing devices based on domain wall motion, which in return can be a powerful tool to probe the disorder in ultra-thin magnetic films.
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Submitted 19 August, 2022;
originally announced August 2022.
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Enhancing All-Optical Switching of Magnetization by He Ion Irradiation
Authors:
Pingzhi Li,
Johannes W. van der Jagt,
Maarten Beens,
Julian Hintermayr,
Marcel Verheijen,
René Bruikman,
Beatriz Barcones,
Roméo Juge,
Reinoud Lavrijsen,
Dafiné Ravelosona,
Bert Koopmans
Abstract:
All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion…
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All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for interface engineering of spintronic material platforms, giving rise to significant modification of magnetic properties. In this paper, we explore the use of He ion irradiation to enhance single pulse AOS of Co/Gd bilayer-based synthetic ferrimagnets. The intermixing of the constituent magnetic layers by He ion irradiation was both numerically simulated and experimentally verified. We theoretically modelled the effects of intermixing on AOS using the layered microscopic 3-temperature model and found that AOS is enhanced significantly by breaking the pristine Co/Gd interface through intermixing. Following this notion, we studied the threshold fluence of AOS as a function of He ion irradiation fluence. We found that the AOS threshold fluence can be reduced by almost 30%. Our study reveals the control of AOS by He ion irradiation, which opens up an industrially compatible approach for local AOS engineering.
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Submitted 15 July, 2022;
originally announced July 2022.
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Skyrmions in synthetic antiferromagnets and their nucleation via electrical current and ultrafast laser illumination
Authors:
Roméo Juge,
Naveen Sisodia,
Joseba Urrestarazu Larrañaga,
Qiang Zhang,
Van Tuong Pham,
Kumari Gaurav Rana,
Brice Sarpi,
Nicolas Mille,
Stefan Stanescu,
Rachid Belkhou,
Mohamad-Assaad Mawass,
Nina Novakovic-Marinkovic,
Florian Kronast,
Markus Weigand,
Joachim Gräfe,
Sebastian Wintz,
Simone Finizio,
Jörg Raabe,
Lucia Aballe,
Michael Foerster,
Mohamed Belmeguenai,
Liliana Buda-Prejbeanu,
Justin M. Shaw,
Hans T. Nembach,
Laurent Ranno
, et al. (2 additional authors not shown)
Abstract:
Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in…
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Magnetic skyrmions are topological spin textures that hold great promise as nanoscale information carriers in non-volatile memory and logic devices. While room-temperature magnetic skyrmions and their current-induced manipulation were recently demonstrated, the stray field resulting from their finite magnetization as well as their topological charge limit their minimum size and reliable motion in tracks. Antiferromagnetic (AF) skyrmions allow these limitations to be lifted owing to their vanishing magnetization and net zero topological charge, promising room-temperature, ultrasmall skyrmions, fast dynamics, and insensitivity to external magnetic fields. While room-temperature AF spin textures have been recently demonstrated, the observation and controlled nucleation of AF skyrmions operable at room temperature in industry-compatible synthetic antiferromagnetic (SAF) material systems is still lacking. Here we demonstrate that isolated skyrmions can be stabilized at zero field and room temperature in a fully compensated SAF. Using X-ray microscopy techniques, we are able to observe the skyrmions in the different SAF layers and demonstrate their antiparallel alignment. The results are substantiated by micromagnetic simulations and analytical models using experimental parameters, which confirm the chiral SAF skyrmion spin texture and allow the identification of the physical mechanisms that control the SAF skyrmion size and stability. We also demonstrate the local nucleation of SAF skyrmions via local current injection as well as ultrafast laser excitations at zero field. These results will enable the utilization of SAF skyrmions in skyrmion-based devices.
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Submitted 23 November, 2021;
originally announced November 2021.
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Imprint from ferromagnetic skyrmions in an antiferromagnet via exchange bias
Authors:
Kumari Gaurav Rana,
Rafael Lopes Seeger,
Sandra Ruiz-Gómez,
Roméo Juge,
Qiang Zhang,
Kaushik Bairagi,
Van Tuong Pham,
Mohamed Belmeguenai,
Stéphane Auffret,
Michael Foerster,
Lucia Aballe,
Gilles Gaudin,
Vincent Baltz,
Olivier Boulle
Abstract:
Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a t…
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Magnetic skyrmions are topological spin textures holding great potential as nanoscale information carriers. Recently, skyrmions have been predicted in antiferromagnets, with key advantages in terms of stability, size, and dynamical properties over their ferromagnetic analogs. However, their experimental demonstration is still lacking. Here, we show the imprint from ferromagnetic skyrmions into a thin film of an IrMn antiferromagnet, at room temperature and zero external magnetic field, using exchange-bias. Using high-spatial-resolution x-ray magnetic circular dichroism photoemission electron microscopy (XMCD-PEEM), we observed the imprinted spin textures within the IrMn from the XMCD signal of the uncompensated Mn spins at the interface with the ferromagnet. This result opens up a path for logic and memory devices based on skyrmion manipulation in antiferromagnets.
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Submitted 24 November, 2021; v1 submitted 30 September, 2020;
originally announced September 2020.
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Current-Driven Skyrmion Dynamics and Drive-Dependent Skyrmion Hall Effect in an Ultrathin Film
Authors:
Roméo Juge,
Soong-Geun Je,
Dayane de Souza Chaves,
Liliana D. Buda-Prejbeanu,
José Peña-Garcia,
Jayshankar Nath,
Ioan Mihai Miron,
Kumari Gaurav Rana,
Lucia Aballe,
Michael Foerster,
Francesca Genuzio,
Tevfik Onur Menteş,
Andrea Locatelli,
Francesco Maccherozzi,
Sarnjeet S. Dhesi,
Mohamed Belmeguenai,
Yves Roussigné,
Stéphane Auffret,
Stefania Pizzini,
Gilles Gaudin,
Jan Vogel,
Olivier Boulle
Abstract:
Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their pr…
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Magnetic skyrmions are chiral spin textures that hold great promise as nanoscale information carriers. Since their first observation at room temperature, progress has been made in their current-induced manipulation, with fast motion reported in stray-field-coupled multilayers. However, the complex spin textures with hybrid chiralities and large power dissipation in these multilayers limit their practical implementation and the fundamental understanding of their dynamics. Here, we report on the current-driven motion of Néel skyrmions with diameters in the 100-nm range in an ultrathin Pt/Co/MgO trilayer. We find that these skyrmions can be driven at a speed of 100 m/s and exhibit a drive-dependent skyrmion Hall effect, which is accounted for by the effect of pinning. Our experiments are well substantiated by an analytical model of the skyrmion dynamics as well as by micromagnetic simulations including material inhomogeneities. This good agreement is enabled by the simple skyrmion spin structure in our system and a thorough characterization of its static and dynamical properties.
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Submitted 9 October, 2019; v1 submitted 17 April, 2019;
originally announced April 2019.
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Large voltage tuning of Dzyaloshinskii-Moriya Interaction: a route towards dynamic control of skyrmion chirality
Authors:
Titiksha Srivastava,
Marine Schott,
Roméo Juge,
Viola Křižáková,
Mohamed Belmeguenai,
Yves Soussigné,
Anne Bernand-Mantel,
Laurent Ranno,
Stefania Pizzini,
Salim-Mourad Chérif,
Andrey Stashkevich,
Stéphane Auffret,
Olivier Boulle,
Gilles Gaudin,
Mair Chshiev,
Claire Baraduc,
Hélène Béa
Abstract:
Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is cruci…
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Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices.
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Submitted 26 June, 2018; v1 submitted 26 April, 2018;
originally announced April 2018.
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Magnetic skyrmions in confined geometries : effect of the magnetic field and the disorder
Authors:
Roméo Juge,
Soong-Geun Je,
Dayane de Souza Chaves,
Stefania Pizzini,
Liliana D. Buda-Prejbeanu,
Lucia Aballe,
Michael Foerster,
Andrea Locatelli,
Tevfik Onur Menteş,
Alessandro Sala,
Francesco Maccherozzi,
Sarnjeet S. Dhesi,
Stéphane Auffret,
Gilles Gaudin,
Jan Vogel,
Olivier Boulle
Abstract:
We report on the effect of the lateral confinement and a perpendicular magnetic field on isolated room-temperature magnetic skyrmions in sputtered Pt/Co/MgO nanotracks and nanodots. We show that the skyrmions size can be easily tuned by playing on the lateral dimensions of the nanostructures and by using external magnetic field amplitudes of a few mT, which allow to reach sub-100 nm diameters. Our…
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We report on the effect of the lateral confinement and a perpendicular magnetic field on isolated room-temperature magnetic skyrmions in sputtered Pt/Co/MgO nanotracks and nanodots. We show that the skyrmions size can be easily tuned by playing on the lateral dimensions of the nanostructures and by using external magnetic field amplitudes of a few mT, which allow to reach sub-100 nm diameters. Our XMCD-PEEM observations also highlight the important role of the pinning on the skyrmions size and stability under an out-of-plane magnetic field. Micromagnetic simulations reveal that the effect of local pinning can be well accounted for by considering the thin film grain structure with local anisotropy variations and reproduce well the dependence of the skyrmion diameter on the magnetic field and the geometry.
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Submitted 13 June, 2017; v1 submitted 6 June, 2017;
originally announced June 2017.
