Electrical Characterization of PbZr0.4Ti0.6O3 Capacitors
Authors:
P. Zubko,
D. J. Jung,
J. F. Scott
Abstract:
We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited…
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We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at various temperatures over two decades in voltage from current-time data and analyzed in terms of several common transport models including space charge limited conduction, Schottky thermionic emission under full and partial depletion and Poole-Frenkel conduction, showing that the later is the most plausible leakage mechanism in these high quality films. In addition, ferroelectric hysteresis loops and capacitance-voltage data were obtained over a large range of temperatures and discussed in terms of a modified Landau-Ginzburg-Devonshire theory accounting for space charge effects.
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Submitted 23 July, 2006;
originally announced July 2006.
Space Charge Effects in Ferroelectric Thin Films
Authors:
P. Zubko,
D. J. Jung,
J. F. Scott
Abstract:
The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squar…
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The effects of space charges on hysteresis loops and field distributions in ferroelectrics have been investigated numerically using the phenomenological Landau-Ginzburg-Devonshire theory. Cases with the ferroelectric fully and partially depleted have been considered. In general, increasing the number of charged impurities results in a lowering of the polarization and coercive field values. Squarer loops were observed in the partially depleted cases and a method was proposed to identify fully depleted samples experimentally from dielectric and polarization measurements alone. Unusual field distributions found for higher dopant concentrations have some interesting implications for leakage mechanisms and limit the range of validity of usual semiconductor equations for carrier transport.
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Submitted 22 July, 2006;
originally announced July 2006.
High-Field Conduction in Barium Titanate
Authors:
J. F. Scott,
F. D. Morrison,
P. Zubko,
D. J. Jung,
P. Baxter,
M. M. Saad,
J. M. Gregg,
R. M. Bowman
Abstract:
We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in…
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We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in field compared with the early studies of BaTiO3 conduction [A. Branwood et al., Proc. Phys. Soc. London 79, 1161 (1962)]. Comparison is also given with ceramic multilayer barium titanate capacitors, which show similar SCLC behaviour. The data are shown to be completely incompatible with variable range hopping [B. I. Shklovskii, Sov. Phys. Semicond. 6, 1964 (1973)], despite the recent report of such mechanism in SrTiO3 films [D. Fuchs, M. Adam, and R. Schneider, J. Phys. IV France 11, 71 (2001)].
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Submitted 22 September, 2004;
originally announced September 2004.