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Conformal oxide coating of Carbon Nanotubes
Authors:
S. Kawasaki,
G. Catalan,
H. Fan,
M. M. Saad,
J. M. Gregg,
M. A. Correa-Duarte,
J. Rybczynski,
F. D. Morrison,
T. Tatsuta,
O. Tsuji,
J. F. Scott
Abstract:
The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. We report the first integration of high-dielectric oxide films onto carbon nanotube electrodes with an aim of ultra-high integration density of FeRAMs (Tb/in2).
The International Roadmap for Ferroelectric Memories requires three-dimensional integration of high-dielectric materials onto metal interconnects or bottom electrodes by 2010. We report the first integration of high-dielectric oxide films onto carbon nanotube electrodes with an aim of ultra-high integration density of FeRAMs (Tb/in2).
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Submitted 20 June, 2007;
originally announced June 2007.
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High-Field Conduction in Barium Titanate
Authors:
J. F. Scott,
F. D. Morrison,
P. Zubko,
D. J. Jung,
P. Baxter,
M. M. Saad,
J. M. Gregg,
R. M. Bowman
Abstract:
We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in…
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We present current-voltage studies of very thin (ca. 77 nm) barium titanate single crystals up to 1.3 GV/m applied field. These show that the mechanism of leakage current at high fields is that of space charge limited conduction (SCLC) in a regime with a continuous distribution of traps, according to the original model of Rose [Phys. Rev. 97, 1537 (1955)]. This study represents a factor of x5 in field compared with the early studies of BaTiO3 conduction [A. Branwood et al., Proc. Phys. Soc. London 79, 1161 (1962)]. Comparison is also given with ceramic multilayer barium titanate capacitors, which show similar SCLC behaviour. The data are shown to be completely incompatible with variable range hopping [B. I. Shklovskii, Sov. Phys. Semicond. 6, 1964 (1973)], despite the recent report of such mechanism in SrTiO3 films [D. Fuchs, M. Adam, and R. Schneider, J. Phys. IV France 11, 71 (2001)].
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Submitted 22 September, 2004;
originally announced September 2004.
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Intrinsic Dielectric Response in Ferroelectric Nanocrystals
Authors:
M. M. Saad,
P. Baxter,
R. M. Bowman,
J. M. Gregg,
F. Morrison,
J. F. Scott
Abstract:
Measurements on 'free-standing' single crystal barium titanate capacitors with thicknesses down to 75nm show a dielectric response typical of large single crystals rather than conventional thin films. There is a notable absence of any broadening or temperature shift of the dielectric peak or loss tangent. Peak dielectric constants of ca. 25,000 are obtained, and Curie-Weiss analysis demonstrates…
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Measurements on 'free-standing' single crystal barium titanate capacitors with thicknesses down to 75nm show a dielectric response typical of large single crystals rather than conventional thin films. There is a notable absence of any broadening or temperature shift of the dielectric peak or loss tangent. Peak dielectric constants of ca. 25,000 are obtained, and Curie-Weiss analysis demonstrates 1st order transformation behavior. This is in surprising contrast to results on conventionally deposited thin film heterostructures, which show large dielectric peak broadening and temperature shifts [e.g. C. B. Parker, J-P. Maria and A. I. Kingon, Appl. Phys. Lett., 81, 340 (2002)], as well as an apparent change in the nature of the paraelectric-ferroelectric transition from 1st to 2nd order. Our data are compatible with the recent model by Bratkovsky and Levanyuk, which attributes dielectric peak broadening to gradient terms that will exist in any thin film capacitor heterostructure, either through defect profiles introduced during growth, or through subtle asymmetry between top and bottom electrodes. The observed recovery of 1st order transformation behavior is consistent with the absence of significant substrate clamping in our experiment, as modeled by Pertsev et al. Phys. Rev. Lett., 80, 1988 (1998), and illustrates that the 2nd order behaviour seen in conventionally deposited thin films cannot be attributed to the effects of reduced dimensionality in the system, nor to the influence of an intrinsic universal interfacial capacitance associated with the electrode-ferroelectric interface.
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Submitted 8 June, 2004;
originally announced June 2004.
