Spin-flop quasi metamagnetic, anisotropic magnetic, and electrical transport behavior of Ho substituted kagome magnet ErMn$_6$Sn$_6$
Authors:
Jacob Casey,
S. Shanmukharao Samatham,
Christopher Burgio,
Noah Kramer,
Asraf Sawon,
Jamaal Huff and,
Arjun K. Pathak
Abstract:
We report on the magnetic and electrical properties of a (Mn$_3$Sn)$_2$ triangular network kagome structured high quality Ho substituted ErMn$_6$Sn$_6$ single-crystal sample by magneto-transport measurements. Er$_{0.5}$Ho$_{0.5}$Mn$_6$Sn$_6$ orders antiferromagnetically at Néel temperature $T_\mathrm{N} \sim$ 350 K followed by a ferrimagnetic (FiM) transition at $T_\mathrm{C} \sim$ 114 K and spin-…
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We report on the magnetic and electrical properties of a (Mn$_3$Sn)$_2$ triangular network kagome structured high quality Ho substituted ErMn$_6$Sn$_6$ single-crystal sample by magneto-transport measurements. Er$_{0.5}$Ho$_{0.5}$Mn$_6$Sn$_6$ orders antiferromagnetically at Néel temperature $T_\mathrm{N} \sim$ 350 K followed by a ferrimagnetic (FiM) transition at $T_\mathrm{C} \sim$ 114 K and spin-orientation transition at $T_\mathrm{t} \sim$ 20 K. The field-manifestations of these magnetic phases in the \textit{ab}-basal plane and along the \textit{c}-axis are illustrated through temperature-field \textit{T-H} phase diagrams. In \textit{H}$\parallel$\textit{c}, narrow hysteresis between spin reorientation and field-induced FiM phases below $T_\mathrm{t}$, enhanced/strengthened FiM phase below $T_\mathrm{C}$ and stemming of FiM phase out of strongly coexisting AFM and FiM phases below $T_\mathrm{N}$ through a non-meta-magnetic transition are confirmed to arise from strong R-Mn sublattices interaction. In contrast, \textit{H}$\parallel$\textit{ab}-plane, between $T_\mathrm{N}$ and $T_\mathrm{C}$, individually contributing R-Mn sublattices with weak antiferromagnetic interactions undergo a field-induced spin-flop quasi-metamagnetic transition to FiM state. The temperature dependent electrical resistivity suggests metallic nature with Fermi liquid behavior at low temperatures. Essentially, the current study stimulates interest to investigate the magnetic and electrical properties of mixed rare-earth layered kagome magnetic metals for possible novel and exotic behavior.
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Submitted 26 June, 2023;
originally announced June 2023.
Metal-insulator transition in films of doped semiconductor nanocrystals
Authors:
Ting Chen,
K. V. Reich,
Nicolaas J. Kramer,
Han Fu,
Uwe R. Kortshagen,
B. I. Shklovskii
Abstract:
To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$…
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To fully deploy the potential of semiconductor nanocrystal films as low-cost electronic materials, a better understanding of the amount of dopants required to make their conductivity metallic is needed. In bulk semiconductors, the critical concentration of electrons at the metal-insulator transition is described by the Mott criterion. Here, we theoretically derive the critical concentration $n_c$ for films of heavily doped nanocrystals devoid of ligands at their surface and in direct contact with each other. In the accompanying experiments, we investigate the conduction mechanism in films of phosphorus-doped, ligand-free silicon nanocrystals. At the largest electron concentration achieved in our samples, which is half the predicted $n_c$, we find that the localization length of hopping electrons is close to three times the nanocrystals diameter, indicating that the film approaches the metal-insulator transition.
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Submitted 14 June, 2016;
originally announced June 2016.
