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Stabilization and high thermoelectric performance of high-entropy-type cubic AgBi(S, Se, Te)2
Authors:
Asato Seshita,
Aichi Yamashita,
Takeshi Fujita,
Takayoshi Katase,
Akira Miura,
Yuki Nakahira,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
As thermoelectric generators can convert waste heat into electricity, they play an important role in energy harvesting. The metal chalcogenide AgBiSe2 is one of the high-performance thermoelectric materials with low lattice thermal conductivity (klat), but it exhibits temperature-dependent crystal structural transitions from hexagonal to rhombohedral, and finally a cubic phase as the temperature r…
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As thermoelectric generators can convert waste heat into electricity, they play an important role in energy harvesting. The metal chalcogenide AgBiSe2 is one of the high-performance thermoelectric materials with low lattice thermal conductivity (klat), but it exhibits temperature-dependent crystal structural transitions from hexagonal to rhombohedral, and finally a cubic phase as the temperature rises. The high figure-of-merit ZT is obtained only for the high-temperature cubic phase. In this study, we utilized the high-entropy-alloy (HEA) concept for AgBiSe2 to stabilize the cubic phase throughout the entire temperature range with enhanced thermoelectric performance. We synthesized high-entropy-type AgBiSe2-2xSxTex bulk polycrystals and realized the stabilization of the cubic phase from room temperature to 800 K for x > 0.6. The ultra-low klat at of 0.30 Wm^-1K^-1 and the high peak ZT 0.9 at around 750 K were realized for cubic AgBiSe2-2xSxTex without carrier tuning. In addition, the average ZT value of x = 0.6 and 0.7 for the temperature range of 360-750 K increased to 0.38 and 0.40, respectively, which are comparable to the highest previously reported values.
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Submitted 1 April, 2024;
originally announced April 2024.
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Lattice Anharmonicity in BiS2-Based Layered Superconductor RE(O,F)BiS2 (RE = La, Ce, Pr, Nd)
Authors:
Fysol Ibna Abbas,
Kazuhisa Hoshi,
Aichi Yamashita,
Yuki Nakahira,
Yosuke Goto,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Kensei Terashima,
Ryo Matsumoto,
Yoshihiko Takano,
Yoshikazu Mizuguchi
Abstract:
We studied Grüneisen parameter (γG) to investigate lattice anharmonicity in a layered BiS2-based superconductor system REO1-xFxBiS2 (RE = La, Ce, Pr, Nd), where in-plane chemical pressure was tuned by substituting the RE elements. With increasing in-plane chemical pressure, bulk modulus remarkably increases, and a high γG is observed for RE = Nd. The dependence of γG on in-plane chemical pressure…
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We studied Grüneisen parameter (γG) to investigate lattice anharmonicity in a layered BiS2-based superconductor system REO1-xFxBiS2 (RE = La, Ce, Pr, Nd), where in-plane chemical pressure was tuned by substituting the RE elements. With increasing in-plane chemical pressure, bulk modulus remarkably increases, and a high γG is observed for RE = Nd. The dependence of γG on in-plane chemical pressure exhibits a good correlation with Tc, and a higher Tc is achieved when γG is large for RE = Nd. In addition, γG shows a slight decrease by a decrease of F concentration (x) in REO1-xFxBiS2. Our results show that the anharmonic vibration of Bi along the c-axis is present in REO1-xFxBiS2, and the enhancement of the anharmonicity is positively linked to superconducting Tc and pairing mechanisms.
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Submitted 22 March, 2022;
originally announced March 2022.
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Observing and modeling the sequential pairwise reactions that drive solid-state ceramic synthesis
Authors:
Akira Miura,
Christopher J. Bartel,
Yusuke Goto,
Yoshikazu Mizuguchi,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yongming Wang,
Toshie Yaguchi,
Manabu Shirai,
Masanori Nagao,
Nataly Carolina Rosero-Navarro,
Kiyoharu Tadanaga,
Gerbrand Ceder,
Wenhao Sun
Abstract:
Solid-state synthesis from powder precursors is the primary processing route to advanced multicomponent ceramic materials. Designing ceramic synthesis routes is usually a laborious, trial-and-error process, as heterogeneous mixtures of powder precursors often evolve through a complicated series of reaction intermediates. Here, we show that phase evolution from multiple precursors can be modeled as…
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Solid-state synthesis from powder precursors is the primary processing route to advanced multicomponent ceramic materials. Designing ceramic synthesis routes is usually a laborious, trial-and-error process, as heterogeneous mixtures of powder precursors often evolve through a complicated series of reaction intermediates. Here, we show that phase evolution from multiple precursors can be modeled as a sequence of pairwise interfacial reactions, with thermodynamic driving forces that can be efficiently calculated using ab initio methods. Using the synthesis of the classic high-temperature superconductor YBa$_2$Cu$_3$O$_{6+x}$ (YBCO) as a representative system, we rationalize how replacing the common BaCO$_3$ precursor with BaO$_2$ redirects phase evolution through a kinetically-facile pathway. Our model is validated from in situ X-ray diffraction and in situ microscopy observations, which show rapid YBCO formation from BaO$_2$ in only 30 minutes. By combining thermodynamic modeling with in situ characterization, we introduce a new computable framework to interpret and ultimately design synthesis pathways to complex ceramic materials.
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Submitted 13 January, 2021; v1 submitted 22 September, 2020;
originally announced September 2020.
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Two-fold symmetry of in-plane magnetoresistance anisotropy in the superconducting states of BiCh2-based LaO0.9F0.1BiSSe single crystal
Authors:
Kazuhisa Hoshi,
Motoi Kimata,
Yosuke Goto,
Akira Miura,
Chikao Moriyoshi,
Yoshihiro Kuroiwa,
Masanori Nagao,
Yoshikazu Mizuguchi
Abstract:
Recently, two-fold symmetric in-plane anisotropy of the superconducting properties have been observed in a single crystal of BiCh2-based (Ch: S, Se) layered superconductor LaO0.5F0.5BiSSe having a tetragonal (four-fold-symmetric) in-plane structure; the phenomena are very similar to those observed in nematic superconductors. To explore the origin of the two-fold symmetric anisotropy in the BiCh2-b…
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Recently, two-fold symmetric in-plane anisotropy of the superconducting properties have been observed in a single crystal of BiCh2-based (Ch: S, Se) layered superconductor LaO0.5F0.5BiSSe having a tetragonal (four-fold-symmetric) in-plane structure; the phenomena are very similar to those observed in nematic superconductors. To explore the origin of the two-fold symmetric anisotropy in the BiCh2-based system, we have investigated the electron-doping dependence on the anisotropy by examining the in-plane anisotropy of the magnetoresistance in the superconducting states for a single crystal of LaO0.9F0.1BiSSe under high magnetic fields up to 15 T. We observed a two-fold symmetry of in-plane anisotropy of magnetoresistance for LaO0.9F0.1BiSSe. The results obtained for LaO0.9F0.1BiSSe are quite similar to those observed for LaO0.5F0.5BiSSe, which has a higher electron doping concentration than LaO0.9F0.1BiSSe. Our present finding suggests that the emergence of the in-plane symmetry breaking in the superconducting state is robust to the carrier concentration in the series of LaO1-xFxBiSSe.
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Submitted 20 June, 2020;
originally announced June 2020.
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Evolution of two bulk-superconducting phases in Sr0.5RE0.5FBiS2 (RE: La, Ce, Pr, Nd, Sm) by external hydrostatic pressure effect
Authors:
Aichi Yamashita,
Rajveer Jha,
Yosuke Goto,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Chizuru Kawashima,
Kouhei Ishida,
Hiroki Takahashi,
Yoshikazu Mizuguchi
Abstract:
Polycrystalline samples of Sr1-xRExFBiS2 (RE: La, Ce, Pr, Nd, and Sm) were synthesized via the solid-state reaction and characterized using synchrotron X-ray diffraction. Although all the Sr0.5RE0.5FBiS2 samples exhibited superconductivity at transition temperatures (Tc) within the range of 2.1-2.7 K under ambient pressure, the estimated superconducting volume fraction was small. This indicated th…
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Polycrystalline samples of Sr1-xRExFBiS2 (RE: La, Ce, Pr, Nd, and Sm) were synthesized via the solid-state reaction and characterized using synchrotron X-ray diffraction. Although all the Sr0.5RE0.5FBiS2 samples exhibited superconductivity at transition temperatures (Tc) within the range of 2.1-2.7 K under ambient pressure, the estimated superconducting volume fraction was small. This indicated the non-bulk nature of superconductivity in these samples under ambient pressure. A dramatic evolution of the bulk superconducting phases was achieved on applying an external hydrostatic pressure. Near pressures below 1 GPa, bulk superconductivity was induced with a Tc of 2.5-2.8 K, which is termed as the low-P phase. Moreover, the high-P phase (Tc = 10.0-10.8 K) featuring bulk characteristics was observed at higher pressures. Pressure-Tc phase diagrams indicated that the critical pressure for the emergence of the high-P phase tends to increase with decreasing ionic radius of the doped RE ions. According to the high-pressure X-ray diffraction measurements of Sr0.5La0.5FBiS2, a structural phase transition from tetragonal to monoclinic also occurred at approximately 1.1 GPa. Thus, this phase transition indicates a pressure-induced superconducting-superconducting transition similar to the transition in LaO0.5F0.5BiS2. Bulk superconducting phases in Sr0.5RE0.5FBiS2 induced by the external hydrostatic pressure effect are expected to be useful for evaluating the mechanisms of superconductivity in BiCh2-based superconductors.
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Submitted 15 June, 2020;
originally announced June 2020.
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Structural phase diagram of LaO1-xFxBiSSe: suppression of the structural phase transition by partial F substitutions
Authors:
Kazuhisa Hoshi,
Shunsuke Sakuragi,
Takeshi Yajima,
Yosuke Goto,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
We have investigated low-temperature crystal structure of BiCh2-based compounds LaO1-xFxBiSSe (x = 0, 0.01, 0.02, 0.03, and 0.5), in which anomalous two-fold-symmetric in-plane anisotropy of superconducting states has been observed for x = 0.5. From synchrotron X-ray diffraction experiments, a structural transition from tetragonal to monoclinic was observed for x = 0 and 0.01 at 340 and 240 K, res…
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We have investigated low-temperature crystal structure of BiCh2-based compounds LaO1-xFxBiSSe (x = 0, 0.01, 0.02, 0.03, and 0.5), in which anomalous two-fold-symmetric in-plane anisotropy of superconducting states has been observed for x = 0.5. From synchrotron X-ray diffraction experiments, a structural transition from tetragonal to monoclinic was observed for x = 0 and 0.01 at 340 and 240 K, respectively. For x = 0.03, a structural transition and broadening of the diffraction peak were not observed down to 100 K. These facts suggest that the structural transition could be suppressed by 3% F substitution in LaO1-xFxBiSSe. Furthermore, the crystal structure for x = 0.5 at 4 K was examined by low-temperature (laboratory) X-ray diffraction, which confirmed that the tetragonal structure is maintained at 4 K for x = 0.5. Our results suggest that the two-fold-symmetric in-plane anisotropy of superconducting states observed for LaO0.5F0.5BiSSe was not originated from structural symmetry lowering.
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Submitted 7 July, 2020; v1 submitted 14 June, 2020;
originally announced June 2020.
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Crystal Structure and Thermoelectric Transport Properties of As-Doped Layered Pnictogen Oxyselenides NdO0.8F0.2Sb1-xAsxSe2
Authors:
Kota Morino,
Yosuke Goto,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdO0.8F0.2Sb1-xAsxSe2 (x < 0.7), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal P4/nmm space group (No. 129) at room temperature. The lattice parameter c decreases…
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We report the synthesis and thermoelectric transport properties of As-doped layered pnictogen oxyselenides NdO0.8F0.2Sb1-xAsxSe2 (x < 0.7), which are predicted to show high-performance thermoelectric properties based on first-principles calculation. The crystal structure of these compounds belongs to the tetragonal P4/nmm space group (No. 129) at room temperature. The lattice parameter c decreases with increasing x, while a remains almost unchanged among the samples. Despite isovalent substitution of As for Sb, electrical resistivity significantly rises with increasing x. Very low thermal conductivity of less than 0.8 W/mK is observed at temperatures between 300 and 673 K for all the examined samples. For As-doped samples, the thermal conductivity further decreases above 600 K. Temperature-dependent synchrotron X-ray diffraction indicates that an anomaly also occurs in the c-axis length at around 600 K, which may relate to the thermal transport properties.
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Submitted 10 May, 2020;
originally announced May 2020.
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Bulk superconductivity induced by Se substitution in self-doped BiCh2-based compound CeOBiS2-xSex
Authors:
Ryosuke Kiyama,
Yosuke Goto,
Kazuhisa Hoshi,
Rajveer Jha,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Tatsuma D. Matsuda,
Yuji Aoki,
Yoshikazu Mizuguchi
Abstract:
We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition…
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We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition temperature (Tc) was 3.0 K for x = 0.6. A superconductivity phase diagram of CeOBiS2-xSex was established based on Tc estimated from the electrical resistivity and magnetization measurements. The emergence of superconductivity in CeOBiS2-xSex was explained with two essential parameters of in-plane chemical pressure and carrier concentration, which systematically changed with increasing Se concentration.
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Submitted 22 January, 2020;
originally announced January 2020.
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Improvement of superconducting properties by chemical pressure effect in Eu-doped La2-xEuxO2Bi3Ag0.6Sn0.4S6
Authors:
Rajveer Jha,
Yosuke Goto,
Ryuji Higashinaka,
Akira Miura,
C. Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
We have investigated the substitution effect of Eu on the superconductivity in La2-xEuxO2Bi3Ag0.6Sn0.4S6. Recently, we reported an observation of superconductivity at 0.5 K in a layered oxychalcogenide La2O2Bi3AgS6. The Sn doping at the Ag site was found to raise the superconducting transition temperature, Tc to 2.5 K in La2O2Bi3Ag0.6Sn0.4S6. To further improve the superconducting properties, we h…
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We have investigated the substitution effect of Eu on the superconductivity in La2-xEuxO2Bi3Ag0.6Sn0.4S6. Recently, we reported an observation of superconductivity at 0.5 K in a layered oxychalcogenide La2O2Bi3AgS6. The Sn doping at the Ag site was found to raise the superconducting transition temperature, Tc to 2.5 K in La2O2Bi3Ag0.6Sn0.4S6. To further improve the superconducting properties, we have partially substituted Eu for the La site to increase the chemical pressure in La2-xEuxO2Bi3Ag0.6Sn0.4S6 (x = 0.1 to 0.6). With the increase in Eu concentration, x, the lattice constant a was found to shrink, while the lattice constant c was marginally shortened, which suggests that the chemical pressure induced by the Eu doping is uniaxial along the a-axis. Tc was observed to increase with increasing x up to x = 0.4, further decreasing for higher Eu concentrations of x = 0.5 and 0.6. From the magnetic susceptibility and resistivity measurements, the bulk nature of superconductivity has been observed for x = 0.1 to 0.5 with Tc = 2.5 to 4.0 K, respectively. The upper critical field (Bc2) was noted to be 3.5 T for x = 0.4, which also has the highest Tc.
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Submitted 25 August, 2019;
originally announced August 2019.
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Enhanced superconductivity by Na doping in SnAs-based layered compound Na$_{1+x}$Sn$_{2-x}$As$_2$
Authors:
Hao Yuwen,
Yosuke Goto,
Rajveer Jha,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Tatsuma D. Matsuda,
Yuji Aoki,
Yoshikazu Mizuguchi
Abstract:
Superconducting transition temperature (Tc) reported in SnAs-based layered compound NaSn$_2$As$_2$ varies from 1.2 to 1.6 K, implying that its superconductivity is critically sensitive to non-stoichiometry. Here, we demonstrate that Na-doping on the Sn site (Na$_{1+x}$Sn$_{2-x}$As$_2$) is effective in enhancing superconductivity, leading to Tc = 2.1 K for x = 0.4. First-principles calculation indi…
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Superconducting transition temperature (Tc) reported in SnAs-based layered compound NaSn$_2$As$_2$ varies from 1.2 to 1.6 K, implying that its superconductivity is critically sensitive to non-stoichiometry. Here, we demonstrate that Na-doping on the Sn site (Na$_{1+x}$Sn$_{2-x}$As$_2$) is effective in enhancing superconductivity, leading to Tc = 2.1 K for x = 0.4. First-principles calculation indicates that such a doping, or Na$_{\rm Sn}$ antisite defects, is energetically favored over other cation vacancies. Our results pave the way for increasing Tc of layered tin pnictide superconductors.
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Submitted 22 July, 2019;
originally announced July 2019.
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Pressure-induced superconductivity in layered pnictogen diselenide NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$ (x = 0.3 and 0.7)
Authors:
Ryo Matsumoto,
Yosuke Goto,
Sayaka Yamamoto,
Kenta Sudo,
Hidetomo Usui,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Shintaro Adachi,
Tetsuo Irifune,
Hiroyuki Takeya,
Hiromi Tanaka,
Kazuhiko Kuroki,
Yoshikazu Mizuguchi,
Yoshihiko Takano
Abstract:
Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an increase in Bi content x. Crystal structure analysis using synchrotron X-ray diffraction suggests that insulator to metal transition upon Bi doping correlates with…
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Polycrystalline samples of layered pnictogen diselenide NdO0.8F0.2Sb1-xBixSe2 (x = 0 to 0.8) were successfully synthesized by solid-state reactions. Electrical resistivity in the synthesized samples was systematically decreased with an increase in Bi content x. Crystal structure analysis using synchrotron X-ray diffraction suggests that insulator to metal transition upon Bi doping correlates with anomalous change in c-axis length and/or corrugation in conducting layer. The emergence of superconductivity under high pressure is demonstrated using diamond anvil cell (DAC) with boron-doped diamond electrodes, for x = 0.3 and 0.7 as the representative samples. For Sb-rich one (x = 0.3), we observed a superconducting transition with Tconset = 5.3 K at 50 GPa, which is the first-ever report of the superconductivity in layered SbCh2-based (Ch: chalcogen) compounds. The Tconset of x = 0.3 increased with increasing pressure and reached 7.9 K at 70.8 GPa, followed by the gradual decrease in Tc up to 90 GPa. For Bi-rich one (x = 0.7), a superconducting transition with Tconset = 5.9 K was observed at 43.5 GPa, which is the almost comparable to that of x = 0.3; besides, upper critical field (Hc2) is evaluated to be ~10 T for x = 0.7, which is higher than that of x = 0.3 (Hc2 = 6.7 T at 50 GPa).
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Submitted 1 October, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Effect of Bi Substitution on Thermoelectric Properties of SbSe2-based Layered Compounds NdO$_{0.8}$F$_{0.2}$Sb$_{1-x}$Bi$_x$Se$_2$
Authors:
Yosuke Goto,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect of Bi substitution on the thermoelectric properties of SbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The room temperature electrical resistivi…
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Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect of Bi substitution on the thermoelectric properties of SbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The room temperature electrical resistivity is decreased to 8.0 * 10^-5 ohmm for x = 0.4. The electrical power factor is calculated to be 1.4 * 10^-4 W/mK^2 at 660 K, which is in reasonable agreement with combined Jonker and Ioffe analysis. The room-temperature lattice thermal conductivity of less than 1 W/mK is almost independent of x, in contrast to the point-defect scattering model for conventional alloys. The present work provides an avenue for exploring SbSe2-based insulating and BiSe2-based conducting systems.
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Submitted 28 January, 2019;
originally announced January 2019.
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Improvement of superconducting properties by high mixing entropy at blocking layers in BiS2-based superconductor REO0.5F0.5BiS2
Authors:
Ryota Sogabe,
Yosuke Goto,
Tomohiro Abe,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Akira Miura,
Kiyoharu Tadanaga,
Yoshikazu Mizuguchi
Abstract:
To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined sa…
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To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined samples with different DSmix, the increase in DSmix does not largely affect the bond lengths and the bond angle of the BiS2 conducting layer but clearly suppresses the in-plane disorder at the in-plane S1 site, which is the parameter essential for the emergence of bulk superconductivity in the REO0.5F0.5BiS2 system. Bulk nature of superconductivity is enhanced by the increase in DSmix for the present samples. The results of this work clearly show that the increase in mixing entropy at the blocking layer can positively affect the emergence of bulk superconductivity in the conducting layer, which is the evidence of the interaction between the high entropy states of the blocking layers and the physical properties of the conducting layers.
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Submitted 14 March, 2019; v1 submitted 13 August, 2018;
originally announced August 2018.
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Synthesis, Crystal Structure, and Thermoelectric Properties of Layered Antimony Selenides REOSbSe2 (RE = La, Ce)
Authors:
Yosuke Goto,
Akira Miura,
Ryosuke Sakagami,
Yoichi Kamihara,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 a…
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Inspired by the recent first-principles calculations showing the high thermoelectric performance of layered pnictogen chalcogenides, we experimentally characterise the crystal structure and high-temperature transport properties of the layered antimony selenides REOSbSe2 (RE = La, Ce). The crystal structure of REOSbSe2 was the tetragonal P4/nmm space group, consisting of alternate stacks of SbSe2 and REO layers. These two compounds were n-type semiconductors. The optical band gaps of LaOSbSe2 and CeOSbSe2 were evaluated to be 1.0 and 0.6 eV, respectively. The room-temperature thermal conductivity was 1.5 Wm-1K-1 for RE = La and 0.8 Wm-1K-1 for RE = Ce. These relatively low thermal conductivities were comparable to those of isostructural layered bismuth chalcogenides. We substituted O2- with F- ions to introduce electrons as charged carriers to optimize the thermoelectric performance, but increasing the electrical conductivity was still challenging.
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Submitted 20 May, 2018;
originally announced May 2018.
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Na1-xSn2P2 as a new member of van der Waals-type layered tin pnictide superconductors
Authors:
Yosuke Goto,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Tatsuma D. Matsuda,
Yuji Aoki,
Yoshikazu Mizuguchi
Abstract:
Superconductors with a van der Waals (vdW) structure have attracted a considerable interest because of the possibility for truly two-dimensional (2D) superconducting systems. We recently reported NaSn2As2 as a novel vdW-type superconductor with transition temperature (Tc) of 1.3 K. Herein, we present the crystal structure and superconductivity of new material Na1-xSn2P2 with Tc = 2.0 K. Its crysta…
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Superconductors with a van der Waals (vdW) structure have attracted a considerable interest because of the possibility for truly two-dimensional (2D) superconducting systems. We recently reported NaSn2As2 as a novel vdW-type superconductor with transition temperature (Tc) of 1.3 K. Herein, we present the crystal structure and superconductivity of new material Na1-xSn2P2 with Tc = 2.0 K. Its crystal structure consists of two layers of a buckled honeycomb network of SnP, bound by the vdW forces and separated by Na ions, as similar to that of NaSn2As2. Amount of Na deficiency (x) was estimated to be 0.074(18) using synchrotron X-ray diffraction. Bulk nature of superconductivity was confirmed by the measurements of electrical resistivity, magnetic susceptibility, and specific heat. First-principles calculation using density functional theory shows that Na1-xSn2P2 and NaSn2As2 have comparable electronic structure, suggesting higher Tc of Na1-xSn2P2 is resulted from increased density of states at the Fermi level due to Na deficiency. Because there are various structural analogues with tin-pnictide (SnPn) conducting layers, our results indicate that SnPn-based layered compounds can be categorized into a novel family of vdW-type superconductors, providing a new platform for studies on physics and chemistry of low-dimensional superconductors.
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Submitted 31 July, 2018; v1 submitted 20 May, 2018;
originally announced May 2018.
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Evolution of Anisotropic Displacement Parameters and Superconductivity with Chemical Pressure in BiS2-Based REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd)
Authors:
Yoshikazu Mizuguchi,
Kazuhisa Hoshi,
Yosuke Goto,
Akira Miura,
Kiyoharu Tadanaga,
Chikako Moriyoshi,
Yoshihiro Kuroiwa
Abstract:
In order to understand the mechanisms behind the emergence of superconductivity by the chemical pressure effect in REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd), where bulk superconductivity is induced by the substitutions with a smaller-radius RE, we performed synchrotron powder X-ray diffraction, and analyzed the crystal structure and anisotropic displacement parameters. With the decrease of the RE3+…
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In order to understand the mechanisms behind the emergence of superconductivity by the chemical pressure effect in REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd), where bulk superconductivity is induced by the substitutions with a smaller-radius RE, we performed synchrotron powder X-ray diffraction, and analyzed the crystal structure and anisotropic displacement parameters. With the decrease of the RE3+ ionic radius, the in-plane disorder of the S1 sites significantly decreased, very similar to the trend observed in the Se-substituted systems: LaO0.5F0.5BiS2-xSex and Eu0.5La0.5FBiS2-xSex. Therefore, the emergence of bulk superconductivity upon the suppression of the in-plane disorder at the chalcogen sites is a universal scenario for the BiCh2-based superconductors. In addition, we indicated that the amplitude of vibration along the c-axis of the in-plane chalcogen sites may be related to the Tc in the BiCh2-based superconductors.
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Submitted 19 December, 2017;
originally announced December 2017.
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Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6
Authors:
Yudai Hijikata,
Tomohiro Abe,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yosuke Goto,
Akira Miura,
Kiyoharu Tadanaga,
Yongming Wang,
Osuke Miura,
Yoshikazu Mizuguchi
Abstract:
We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneli…
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We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image confirmed the lattice constant derived from Rietveld refinement (c ~ 20 Å). The electrical resistivity and Seebeck coefficient suggested that the electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful strategy for designing new layered functional materials in the layered chalcogenide family.
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Submitted 18 December, 2017;
originally announced December 2017.
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Crystal structure, site selectivity, and electronic structure of layered chalcogenide LaOBiPbS3
Authors:
Y. Mizuguchi,
Y. Hijikata,
T. Abe,
C. Moriyoshi,
Y. Kuroiwa,
Y. Goto,
A. Miura,
S. Lee,
S. Torii,
T. Kamiyama,
C. H. Lee,
M. Ochi,
K. Kuroki
Abstract:
We have investigated the crystal structure of LaOBiPbS3 using neutron diffraction and synchrotron X-ray diffraction. From structural refinements, we found that the two metal sites, occupied by Bi and Pb, were differently surrounded by the sulfur atoms. Calculated bond valence sum suggested that one metal site was nearly trivalent and the other was nearly divalent. Neutron diffraction also revealed…
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We have investigated the crystal structure of LaOBiPbS3 using neutron diffraction and synchrotron X-ray diffraction. From structural refinements, we found that the two metal sites, occupied by Bi and Pb, were differently surrounded by the sulfur atoms. Calculated bond valence sum suggested that one metal site was nearly trivalent and the other was nearly divalent. Neutron diffraction also revealed site selectivity of Bi and Pb in the LaOBiPbS3 structure. These results suggested that the crystal structure of LaOBiPbS3 can be regarded as alternate stacks of the rock-salt-type Pb-rich sulfide layers and the LaOBiS2-type Bi-rich layers. From band calculations for an ideal (LaOBiS2)(PbS) system, we found that the S bands of the PbS layer were hybridized with the Bi bands of the BiS plane at around the Fermi energy, which resulted in the electronic characteristics different from that of LaOBiS2. Stacking the rock-salt type sulfide (chalcogenide) layers and the BiS2-based layered structure could be a new strategy to exploration of new BiS2-based layered compounds, exotic two-dimensional electronic states, or novel functionality.
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Submitted 12 August, 2017;
originally announced August 2017.
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Origin of high piezoelectricity at the morphotropic phase boundary (MPB) in (Pb0.94Sr0.06)(ZrxTi1-x)O3
Authors:
Ravindra Singh Solanki,
Sunil Kumar Mishra,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Isao Ishii,
Takashi Suzuki,
Dhananjai Pandey
Abstract:
In this work, we address the issue of peaking of piezoelectric response at a particular composition in the morphotropic phase boundary (MPB) region of (Pb0.940Sr0.06)(ZrxTi1-x)O3 (PSZT) piezoelectric ceramics. We present results of synchrotron x-ray powder diffraction, dielectric, piezoelectric and sound velocity studies to critically examine the applicability of various models for the peaking of…
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In this work, we address the issue of peaking of piezoelectric response at a particular composition in the morphotropic phase boundary (MPB) region of (Pb0.940Sr0.06)(ZrxTi1-x)O3 (PSZT) piezoelectric ceramics. We present results of synchrotron x-ray powder diffraction, dielectric, piezoelectric and sound velocity studies to critically examine the applicability of various models for the peaking of physical properties. It is shown that the models based on the concepts of phase coexistence, polarization rotation due to monoclinic structure, tricritical point and temperature dependent softening of elastic modulus may enhance the piezoelectric response in the MPB region in general but cannot explain its peaking at a specific composition. Our results reveal that the high value of piezoelectric response for the MPB compositions in PSZT at x=0.530 is due to the softening of the elastic modulus as a function of composition. The softening of elastic modulus facilitates the generation of large piezoelectric strain and polarization on approaching the MPB composition of x=0.530. This new finding based on the softening of elastic modulus may pave the way forward for discovering/designing new lead-free environmentally friendly piezoelectric materials and revolutionize the field of piezoelectric ceramics.
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Submitted 7 March, 2017;
originally announced March 2017.
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Intrinsic Phase Diagram of Superconductivity in the BiCh2-based System Without In-plane Disorder
Authors:
Kouhei Nagasaka,
Atsuhiro Nishida,
Rajveer Jha,
Joe Kajitani,
Osuke Miura,
Ryuji Higashinaka,
Tatsuma D. Matsuda,
Yuji Aoki,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Hidetomo Usui,
Kazuhiko Kuroki,
Yoshikazu Mizuguchi
Abstract:
We have investigated the crystal structure and physical properties of LaO1-xFxBiSSe to reveal the intrinsic superconductivity phase diagram of the BiCh2-based layered compound family. From synchrotron X-ray diffraction and Rietveld refinements with anisotropic displacement parameters, we clearly found that the in-plane disorder in the BiSSe layer was fully suppressed for all x. In LaO1-xFxBiSSe, m…
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We have investigated the crystal structure and physical properties of LaO1-xFxBiSSe to reveal the intrinsic superconductivity phase diagram of the BiCh2-based layered compound family. From synchrotron X-ray diffraction and Rietveld refinements with anisotropic displacement parameters, we clearly found that the in-plane disorder in the BiSSe layer was fully suppressed for all x. In LaO1-xFxBiSSe, metallic conductivity and superconductivity are suddenly induced by electron doping even at x = 0.05 and 0.1 with a monoclinic structure. In addition, x (F concentration) dependence of the transition temperature (Tc) for x = 0.2-0.5 with a tetragonal structure shows an anomalously flat phase diagram. With these experimental facts, we have proposed the intrinsic phase diagram of the ideal BiCh2-based superconductors with less in-plane disorder.
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Submitted 24 February, 2017;
originally announced February 2017.
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Bi Substitution Effects on Superconductivity of Valence-Skip superconductor AgSnSe2
Authors:
Yudai Hijikata,
Atsuhiro Nishida,
Kohei Nagasaka,
Osuke Miura,
Akira Miura,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yoshikazu Mizuguchi
Abstract:
We have synthesized AgSn1-xBixSe2 polycrystalline samples to investigate the effect of partial substitution of mixed-valence Sn by Bi3+ to the superconductivity of the valence-skip superconductor AgSnSe2. The Bi-substituted AgSn1-xBixSe2 were obtained up to x = 0.2, but an insulating phase Ag2SnBi2Se5 with a NaCl-type structure showed up above x = 0.3. The superconducting transition temperature in…
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We have synthesized AgSn1-xBixSe2 polycrystalline samples to investigate the effect of partial substitution of mixed-valence Sn by Bi3+ to the superconductivity of the valence-skip superconductor AgSnSe2. The Bi-substituted AgSn1-xBixSe2 were obtained up to x = 0.2, but an insulating phase Ag2SnBi2Se5 with a NaCl-type structure showed up above x = 0.3. The superconducting transition temperature increased from 4.5 K (x = 0) to 5.0 K (x = 0.1) by Bi substitution. The enhancement of superconductivity by the suppression of the valence-skip states of Sn suggests that the valence-skip states of Sn are not positively linked to the pairing mechanisms of superconductivity in the AgSnSe2 system.
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Submitted 3 February, 2017;
originally announced February 2017.
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Synchrotron powder X-ray diffraction and structural analysis of Eu0.5La0.5FBiS2-xSex
Authors:
K. Nagasaka,
G. Jinno,
O. Miura,
A. Miura,
C. Moriyoshi,
Y. Kuroiwa,
Y. Mizuguchi
Abstract:
Eu0.5La0.5FBiS2-xSex is a new BiS2-based superconductor system. In Eu0.5La0.5FBiS2-xSex, electron carriers are doped to the BiS2 layer by the substitution of Eu by La. Bulk superconductivity in this system is induced by increasing the in-plane chemical pressure, which is controlled by the Se concentration (x). In this study, we have analysed the crystal structure of Eu0.5La0.5FBiS2-xSex using sync…
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Eu0.5La0.5FBiS2-xSex is a new BiS2-based superconductor system. In Eu0.5La0.5FBiS2-xSex, electron carriers are doped to the BiS2 layer by the substitution of Eu by La. Bulk superconductivity in this system is induced by increasing the in-plane chemical pressure, which is controlled by the Se concentration (x). In this study, we have analysed the crystal structure of Eu0.5La0.5FBiS2-xSex using synchrotron powder diffraction and the Rietveld refinement. The precise determination of the structural parameters and thermal factors suggest that the emergence of bulk superconductivity in Eu0.5La0.5FBiS2-xSex is achieved by the enhanced in-plane chemical pressure and the decrease in in-plane disorder.
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Submitted 25 January, 2017;
originally announced January 2017.
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Improper ferroelectricity in stuffed aluminate sodalites for pyroelectric energy harvesting
Authors:
Yusaku Maeda,
Toru Wakamatsu,
Ayako Konishi,
Hiroki Moriwake,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Kenji Tanabe,
Ichiro Terasaki,
Hiroki Taniguchi
Abstract:
Ferroelectricity in stuffed aluminate sodalites is demonstrated in the present study. The present results indicate that stuffed aluminate sodalites exhibit excellent performance as a pyroelectric energy harvester, suggesting that they exhibit great promise as a class of materials for highly efficient energy harvesting devices. (See manuscript for the full abstract)
Ferroelectricity in stuffed aluminate sodalites is demonstrated in the present study. The present results indicate that stuffed aluminate sodalites exhibit excellent performance as a pyroelectric energy harvester, suggesting that they exhibit great promise as a class of materials for highly efficient energy harvesting devices. (See manuscript for the full abstract)
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Submitted 15 November, 2016;
originally announced November 2016.
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Compositional and temperature evolution of crystal structure of new thermoelectric compound LaOBiS2-xSex
Authors:
Y. Mizuguchi,
A. Miura,
A. Nishida,
O. Miura,
K. Tadanaga,
N. Kumada,
C. H. Lee,
E. Magome,
C. Moriyoshi,
Y. Kuroiwa
Abstract:
We examined the crystal structure of the new thermoelectric material LaOBiS2-xSex, whose thermoelectric performance is enhanced by Se substitution, by using powder synchrotron X-ray diffraction and Rietveld refinement. The emergence of metallic conductivity and enhancement of the thermoelectric power factor of LaOBiS2-xSex can be explained with the higher in-plane chemical pressure caused by the i…
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We examined the crystal structure of the new thermoelectric material LaOBiS2-xSex, whose thermoelectric performance is enhanced by Se substitution, by using powder synchrotron X-ray diffraction and Rietveld refinement. The emergence of metallic conductivity and enhancement of the thermoelectric power factor of LaOBiS2-xSex can be explained with the higher in-plane chemical pressure caused by the increase of Se concentration at the in-plane Ch1 site (Ch = S, Se). High-temperature X-ray diffraction measurements for optimally substituted LaOBiSSe revealed anomalously large atomic displacement parameters (Uiso) for Bi and Ch atoms in the BiCh2 conduction layers. The anisotropic analysis of the atomic displacement parameters (U11 and U33) for the in-plane Bi and Ch1 sites suggested that Bi atoms exhibit large atomic displacement along the c-axis direction above 300 K, which could be the origin of the low thermal conductivity in LaOBiSSe. The large Bi vibration along the c-axis direction could be related to in-plane rattling, which is a new strategy for attaining low thermal conductivity and phonon-glass-electron-crystal states.
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Submitted 21 April, 2016; v1 submitted 3 April, 2016;
originally announced April 2016.
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An Unconventional Phase Transition in BaAl2O4 Driven by Two Competing Soft Modes
Authors:
Y. Ishii,
S. Mori,
Y. Nakahira,
C. Moriyoshi,
H. Taniguchi,
H. Moriwake,
Y. Kuroiwa
Abstract:
We investigated the temperature dependence of the superlattice intensity and thermal diffuse scattering intensity of BaAl2O4, which has a network structure with corner-sharing AlO4 tetrahedra, via synchrotron X-ray diffraction experiments. The temperature variation of the superlattice intensity revealed that the structural phase transition occurs at TC = 451.4 K from the P6322 parent crystal struc…
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We investigated the temperature dependence of the superlattice intensity and thermal diffuse scattering intensity of BaAl2O4, which has a network structure with corner-sharing AlO4 tetrahedra, via synchrotron X-ray diffraction experiments. The temperature variation of the superlattice intensity revealed that the structural phase transition occurs at TC = 451.4 K from the P6322 parent crystal structure to the low-temperature superstructure with a cell volume of 2a x 2b x c. BaAl2O4 exhibits an unconventional structural phase transition driven by two competing soft modes, q1/2 ~ (1/2, 1/2, 0) and q1/3 ~ (1/3, 1/3, 0). When approaching the TC from above, the soft mode with q1/3 appeared first and was followed by the q1/2 soft mode. The thermal diffuse scattering intensities from both soft modes increased sharply at TC; therefore, both modes condensed simultaneously. The first principles calculation revealed that structural instabilities exist at the M- and K-points, at which the calculated imaginary frequencies are similar. The small energy difference of these structural instabilities generates the two competing soft modes and determines the eventual low-temperature crystal structure.
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Submitted 10 October, 2015;
originally announced October 2015.
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Structures and Optical Absorption of Bi2OS2 and LaOBiS2
Authors:
Akira Miura,
Yoshikazu Mizuguchi,
Takahiro Takei,
Nobuhiro Kumada,
Eisuke Magome,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Kiyoharu Tadanaga
Abstract:
The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 show…
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The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 showed optical band gaps of ca. 1.0 eV, which were close to the computationally calculated direct band gaps of ca. 0.8 eV. Our results show that Bi2OS2 and LaOBiS2 are semiconductors containing direct band gaps of 0.8-1.0 eV, and they are suggested to be candidates for optoelectronic materials in the near-infrared region without highly toxic elements.
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Submitted 4 December, 2015; v1 submitted 7 August, 2015;
originally announced August 2015.
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In-plane chemical pressure essential for superconductivity in BiCh2-based (Ch: S, Se) layered structure
Authors:
Yoshikazu Mizuguchi,
Akira Miura,
Joe Kajitani,
Takafumi Hiroi,
Osuke Miura,
Kiyoharu Tadanaga,
Nobuhiro Kumada,
Eisuke Magome,
Chikako Moriyoshi,
Yoshihiro Kuroiwa
Abstract:
BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffr…
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BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffraction in order to reveal the relationship between crystal structure and superconducting properties of the BiCh2-based family. We have found that an enhancement of in-plane chemical pressure would commonly induce bulk superconductivity in both systems. Furthermore, we have revealed that superconducting transition temperature for REO0.5F0.5BiCh2 superconductors could universally be determined by degree of in-plane chemical pressure.
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Submitted 7 April, 2015; v1 submitted 6 April, 2015;
originally announced April 2015.
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Ground state of (Pb0.94Sr0.06)(Zr0.530Ti0.470)O3 in the morphotropic phase boundary region: Evidence for a monoclinic Cc space group
Authors:
Ravindra Singh Solanki,
Akhilesh Kumar Singh,
S. K. Mishra,
Shane J. Kennedy,
Takashi Suzuki,
Yoshihiro Kuroiwa,
Chikako Moriyoshi,
Dhananjai Pandey
Abstract:
The antiferrodistortive (AFD) phase transition for a pseudotetragonal composition of Pb(Zr0.530Ti0.470)O3 (PZT) doped with 6% Sr has been investigated using sound velocity (4 to 320K), high resolution synchrotron X-ray powder diffraction (100 to 800K) and high resolution as well as high flux neutron powder diffraction measurements (4K) to settle the existing controversies about the true ground sta…
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The antiferrodistortive (AFD) phase transition for a pseudotetragonal composition of Pb(Zr0.530Ti0.470)O3 (PZT) doped with 6% Sr has been investigated using sound velocity (4 to 320K), high resolution synchrotron X-ray powder diffraction (100 to 800K) and high resolution as well as high flux neutron powder diffraction measurements (4K) to settle the existing controversies about the true ground state of PZT in the morphotropic phase boundary (MPB) region. The multiplet character of the neutron diffraction profiles of (3/2 1/2 1/2)pc (pseudocubic or pc indices) and (3/2 3/2 1/2)pc superlattice peaks, appearing below the AFD transition temperature, rules out the rhombohedral R3c space group. The true ground state is confirmed to be monoclinic in the Cc space group in agreement with the predictions of the first principles calculations and earlier findings for pure PZT in the MPB region. 6% Sr2+ substitution and the use of high wavelength (λ=2.44Å) neutrons have played key role in settling the existing controversies about the true ground state of PZT in the MPB region.
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Submitted 21 March, 2014;
originally announced March 2014.
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Antiferrodistortive Phase Transition in Pseudorhombohedral (Pb0.94Sr0.06)(Zr0.550Ti0.450)O3 : A Combined Synchrotron x-ray and Neutron Powder Diffraction Study
Authors:
Ravindra Singh Solanki,
S. K. Mishra,
Anatoliy Senyshyn,
I. Ishii,
Chikako Moriyoshi,
Takashi Suzuki,
Yoshihiro Kuroiwa,
Dhananjai Pandey
Abstract:
The controversies about the structure of the true ground state of pseudorhombohedral compositions of Pb(ZrxTi1-x)O3 (PZT) are addressed using a 6% Sr2+ substituted sample with x=0.550. Sound velocity measurements reveal a phase transition at Tc~279K. The temperature dependence of FWHM of (h00)pc peaks and the unit cell volume also show anomalies around 279K even though there is no indication of an…
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The controversies about the structure of the true ground state of pseudorhombohedral compositions of Pb(ZrxTi1-x)O3 (PZT) are addressed using a 6% Sr2+ substituted sample with x=0.550. Sound velocity measurements reveal a phase transition at Tc~279K. The temperature dependence of FWHM of (h00)pc peaks and the unit cell volume also show anomalies around 279K even though there is no indication of any change of space group in the synchrotron X-ray powder diffraction (SXRD) patterns. The neutron powder diffraction patterns reveal appearance of superlattice peaks below Tc~279K confirming the existence of an antiferrodistortive phase transition. The Rietveld analysis of the room temperature and low temperature SXRD data below Tc shows that the structure corresponds to single monoclinic phase in the Cm space group while the analysis of neutron powder diffraction data reveals that the structure of the ground state phase below Tc corresponds to the Cc space group. Our analysis shows that the structural models for the ground state phase based on R3c space group with or without the coexistence of the room temperature monoclinic phase in the Cm space group can be rejected.
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Submitted 21 March, 2014;
originally announced March 2014.
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Evidence for a tricritical point coinciding with the triple point in (Pb0.94Sr0.06)(ZrxTi1-x)O3 : A combined synchrotron x-ray diffraction, dielectric and Landau theory study
Authors:
Ravindra Singh Solanki,
S. K. Mishra,
Yoshihiro Kuroiwa,
Chikako Moriyoshi,
Dhananjai Pandey
Abstract:
We present here results of high resolution synchrotron x-ray diffraction (SXRD) and dielectric studies in conjunction with Landau theory considerations on (Pb0.94Sr0.06)(ZrxTi1-x)O3 compositions in the vicinity of the morphotropic phase boundary (MPB) to find evidence for the flattening of the free energy surface at the MPB proposed in recent ab-initio studies on strongly piezoelectric ceramics. S…
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We present here results of high resolution synchrotron x-ray diffraction (SXRD) and dielectric studies in conjunction with Landau theory considerations on (Pb0.94Sr0.06)(ZrxTi1-x)O3 compositions in the vicinity of the morphotropic phase boundary (MPB) to find evidence for the flattening of the free energy surface at the MPB proposed in recent ab-initio studies on strongly piezoelectric ceramics. SXRD results reveal that the tetragonal and pseudorhombohedral monoclinic compositions with x=0.515 and 0.550 transform directly into the cubic paraelectric phase, whereas for 0.520<x<0.545, the pseudotetragonal as well as pseudorhombohedral monoclinic compositions first transform to the tetragonal phase and then to the cubic phase. Our results reveal the existence of a triple point at x~0.550. It is shown that the tetragonal to cubic transition, irrespective of the composition, upto x~0.545 is accompanied with a discontinuous change in the unit cell volume and thermal hysteresis confirming first order nature of this transition. The pseudorhombohedral monoclinic composition for x=0.550, on the other hand, transforms directly into the cubic phase in a second order manner. Our experimental results thus reveal a crossover from first order to second order phase transition through a tricritical point around x=0.550. Landau theory calculations also confirm gradual flattening of the free energy surface on approaching the tricritical composition x=0.550. We conclude that the triple point in the PZT phase diagram is indeed a tricritical point.
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Submitted 20 March, 2014;
originally announced March 2014.
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Experimental verification of PbBi$_{2}$Te$_{4}$ as a 3D topological insulator
Authors:
K. Kuroda,
H. Miyahara,
M. Ye,
S. V. Eremeev,
Yu. M. Koroteev,
E. E. Krasovskii,
E. V. Chulkov,
S. Hiramoto,
C. Moriyoshi,
Y. Kuroiwa,
K. Miyamoto,
T. Okuda,
M. Arita,
K. Shimada,
H. Namatame,
M. Taniguchi,
Y. Ueda,
A. Kimura
Abstract:
The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological invariants $\mathbb{Z}_2$ are calculated from the {\it ab initio} band structure to be 1; (111). The observed two-dimensional iso-energy contours in the bulk energy…
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The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological invariants $\mathbb{Z}_2$ are calculated from the {\it ab initio} band structure to be 1; (111). The observed two-dimensional iso-energy contours in the bulk energy gap are found to be the largest among the known three-dimensional topological insulators. This opens a pathway to achieving a sufficiently large spin current density in future spintronic devices.
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Submitted 5 March, 2012; v1 submitted 24 November, 2011;
originally announced November 2011.
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Existence of Fine Structure inside Spin Gap in CeRu2Al10
Authors:
Hiroshi Tanida,
Daiki Tanaka,
Masafumi Sera,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Tomoaki Takesaka,
Takashi Nishioka,
Harukazu Kato,
Masahiro Matsumura
Abstract:
We investigate the magnetic field effect on the spin gap state in CeRu2Al10 by measuring the magnetization and electrical resistivity. We found that the magnetization curve for the magnetic field H//c shows a metamagnetic-like anomaly at H*~4 T below T_0=27 K, but no anomaly for H//a and H//b. A shoulder of the electrical resistivity at Ts~5 K for I//c is suppressed by applying a longitudinal magn…
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We investigate the magnetic field effect on the spin gap state in CeRu2Al10 by measuring the magnetization and electrical resistivity. We found that the magnetization curve for the magnetic field H//c shows a metamagnetic-like anomaly at H*~4 T below T_0=27 K, but no anomaly for H//a and H//b. A shoulder of the electrical resistivity at Ts~5 K for I//c is suppressed by applying a longitudinal magnetic field above 5 T. Many anomalies are also found in the magnetoresistance for Hkc below ~5 K. The obtained magnetic phase diagram consists of at least two or three phases below T_0. These results strongly indicate the existence of a fine structure at a low energy side in a spin gap state with the excitation energy of 8 meV recently observed in the inelastic neutron scattering experiments.
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Submitted 25 May, 2010;
originally announced May 2010.
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Anisotropic Transport Properties of CeRu$_2$Al$_{10}$
Authors:
Hiroshi Tanida,
Daiki Tanaka,
Masafumi Sera,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Tomoaki Takesaka,
Takashi Nishioka,
Harukazu Kato,
Masahiro Matsumura
Abstract:
We studied the transport properties of CeRu_2Al_10 single crystals. All the transport properties show largely anisotropic behaviors below T_0. Those along the a- and c-axes show similar behaviors, but are different from those along the b-axis. This suggests that the system could be viewed as a two-dimensional system. The results of the thermal conductivity and thermoelectric power could be explain…
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We studied the transport properties of CeRu_2Al_10 single crystals. All the transport properties show largely anisotropic behaviors below T_0. Those along the a- and c-axes show similar behaviors, but are different from those along the b-axis. This suggests that the system could be viewed as a two-dimensional system. The results of the thermal conductivity and thermoelectric power could be explained by assuming the singlet ground state below T_0. However, the ground state is not simple but has some kind of structure within a spin gap.
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Submitted 25 May, 2010;
originally announced May 2010.
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Possible Long-Range Order with Singlet Ground State in CeRu2Al10
Authors:
Hiroshi Tanida,
Daiki Tanaka,
Masafumi Sera,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Tomoaki Takesaka,
Takashi Nishioka,
Harukazu Kato,
Masahiro Matsumura
Abstract:
We investigate the thermal and transport properties of CexLa1-xRu2Al10 to clarify the origin of the recently discovered mysterious phase below T0=27 K in CeRu2Al10 where a large magnetic entropy is released, however, the existence of an internal magnetic field is ruled out by 27Al-NQR measurement. We find that T0 decreases with decreasing x and disappears at x~0.45. T0 of CeRu2Al10 is suppressed d…
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We investigate the thermal and transport properties of CexLa1-xRu2Al10 to clarify the origin of the recently discovered mysterious phase below T0=27 K in CeRu2Al10 where a large magnetic entropy is released, however, the existence of an internal magnetic field is ruled out by 27Al-NQR measurement. We find that T0 decreases with decreasing x and disappears at x~0.45. T0 of CeRu2Al10 is suppressed down to 26 K under H=14.5 T along the a-axis. These results clearly indicate that the transition has a magnetic origin and is ascribed to the interaction between Ce ions. Considering the results of specific heat, magnetic susceptibility, thermal expansion, and electrical resistivity and also 27Al NQR, we propose that the transition originates from the singlet pair formation between Ce ions. Although its properties in a Ce dilute region is basically understood by the impurity Kondo effect, CeRu2Al10 shows a Kondo-semiconductor-like behavior. The phase transition at T0 may be characterized as a new type of phase transition that appears during the crossover from the dilute Kondo to the Kondo semiconductor.
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Submitted 26 March, 2010;
originally announced March 2010.
