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Observing and modeling the sequential pairwise reactions that drive solid-state ceramic synthesis
Authors:
Akira Miura,
Christopher J. Bartel,
Yusuke Goto,
Yoshikazu Mizuguchi,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yongming Wang,
Toshie Yaguchi,
Manabu Shirai,
Masanori Nagao,
Nataly Carolina Rosero-Navarro,
Kiyoharu Tadanaga,
Gerbrand Ceder,
Wenhao Sun
Abstract:
Solid-state synthesis from powder precursors is the primary processing route to advanced multicomponent ceramic materials. Designing ceramic synthesis routes is usually a laborious, trial-and-error process, as heterogeneous mixtures of powder precursors often evolve through a complicated series of reaction intermediates. Here, we show that phase evolution from multiple precursors can be modeled as…
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Solid-state synthesis from powder precursors is the primary processing route to advanced multicomponent ceramic materials. Designing ceramic synthesis routes is usually a laborious, trial-and-error process, as heterogeneous mixtures of powder precursors often evolve through a complicated series of reaction intermediates. Here, we show that phase evolution from multiple precursors can be modeled as a sequence of pairwise interfacial reactions, with thermodynamic driving forces that can be efficiently calculated using ab initio methods. Using the synthesis of the classic high-temperature superconductor YBa$_2$Cu$_3$O$_{6+x}$ (YBCO) as a representative system, we rationalize how replacing the common BaCO$_3$ precursor with BaO$_2$ redirects phase evolution through a kinetically-facile pathway. Our model is validated from in situ X-ray diffraction and in situ microscopy observations, which show rapid YBCO formation from BaO$_2$ in only 30 minutes. By combining thermodynamic modeling with in situ characterization, we introduce a new computable framework to interpret and ultimately design synthesis pathways to complex ceramic materials.
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Submitted 13 January, 2021; v1 submitted 22 September, 2020;
originally announced September 2020.
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Growth and transport properties under high pressure of PrOBiS2 single crystals
Authors:
Masanori Nagao,
Akira Miura,
Ryo Matsumoto,
Yuki Maruyama,
Satoshi Watauchi,
Yoshihiko Takano,
Kiyoharu Tadanaga,
Isao Tanaka
Abstract:
PrOBiS2 single crystals were successfully grown using a KCl flux. The obtained crystals had a plate-like shape with a typical size of 0.5-1.0 mm and well-developed ab-plane. The Pr valence of the grown crystals, as determined by an X-ray absorption fine structure spectroscopy analysis, was almost trivalent. The PrOBiS2 single crystals did not exhibit superconductivity down to 0.25 K. The transport…
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PrOBiS2 single crystals were successfully grown using a KCl flux. The obtained crystals had a plate-like shape with a typical size of 0.5-1.0 mm and well-developed ab-plane. The Pr valence of the grown crystals, as determined by an X-ray absorption fine structure spectroscopy analysis, was almost trivalent. The PrOBiS2 single crystals did not exhibit superconductivity down to 0.25 K. The transport properties under high pressures up to 50 GPa ensured semiconducting behavior for 2-300 K using a diamond anvil cell.
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Submitted 20 April, 2019;
originally announced April 2019.
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Improvement of superconducting properties by high mixing entropy at blocking layers in BiS2-based superconductor REO0.5F0.5BiS2
Authors:
Ryota Sogabe,
Yosuke Goto,
Tomohiro Abe,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Akira Miura,
Kiyoharu Tadanaga,
Yoshikazu Mizuguchi
Abstract:
To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined sa…
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To investigate the interlayer interaction in the recently synthesized high-entropy-alloy-type (HEA-type) REO0.5F0.5BiS2 superconductors (RE: rare earth), we have systematically synthesized samples with close lattice parameters and different mixing entropy (DSmix) for the RE site. The crystal structure was investigated using synchrotron X-ray diffraction and Rietveld refinement. For the examined samples with different DSmix, the increase in DSmix does not largely affect the bond lengths and the bond angle of the BiS2 conducting layer but clearly suppresses the in-plane disorder at the in-plane S1 site, which is the parameter essential for the emergence of bulk superconductivity in the REO0.5F0.5BiS2 system. Bulk nature of superconductivity is enhanced by the increase in DSmix for the present samples. The results of this work clearly show that the increase in mixing entropy at the blocking layer can positively affect the emergence of bulk superconductivity in the conducting layer, which is the evidence of the interaction between the high entropy states of the blocking layers and the physical properties of the conducting layers.
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Submitted 14 March, 2019; v1 submitted 13 August, 2018;
originally announced August 2018.
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Evolution of Anisotropic Displacement Parameters and Superconductivity with Chemical Pressure in BiS2-Based REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd)
Authors:
Yoshikazu Mizuguchi,
Kazuhisa Hoshi,
Yosuke Goto,
Akira Miura,
Kiyoharu Tadanaga,
Chikako Moriyoshi,
Yoshihiro Kuroiwa
Abstract:
In order to understand the mechanisms behind the emergence of superconductivity by the chemical pressure effect in REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd), where bulk superconductivity is induced by the substitutions with a smaller-radius RE, we performed synchrotron powder X-ray diffraction, and analyzed the crystal structure and anisotropic displacement parameters. With the decrease of the RE3+…
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In order to understand the mechanisms behind the emergence of superconductivity by the chemical pressure effect in REO0.5F0.5BiS2 (RE = La, Ce, Pr, and Nd), where bulk superconductivity is induced by the substitutions with a smaller-radius RE, we performed synchrotron powder X-ray diffraction, and analyzed the crystal structure and anisotropic displacement parameters. With the decrease of the RE3+ ionic radius, the in-plane disorder of the S1 sites significantly decreased, very similar to the trend observed in the Se-substituted systems: LaO0.5F0.5BiS2-xSex and Eu0.5La0.5FBiS2-xSex. Therefore, the emergence of bulk superconductivity upon the suppression of the in-plane disorder at the chalcogen sites is a universal scenario for the BiCh2-based superconductors. In addition, we indicated that the amplitude of vibration along the c-axis of the in-plane chalcogen sites may be related to the Tc in the BiCh2-based superconductors.
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Submitted 19 December, 2017;
originally announced December 2017.
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Synthesis, Crystal Structure, and Physical Properties of New Layered Oxychalcogenide La2O2Bi3AgS6
Authors:
Yudai Hijikata,
Tomohiro Abe,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Yosuke Goto,
Akira Miura,
Kiyoharu Tadanaga,
Yongming Wang,
Osuke Miura,
Yoshikazu Mizuguchi
Abstract:
We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneli…
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We have synthesized a new layered oxychalcogenide La2O2Bi3AgS6. From synchrotron X-ray diffraction and Rietveld refinement, the crystal structure of La2O2Bi3AgS6 was refined using a model of the P4/nmm space group with a = 4.0644(1) Å and c = 19.412(1) Å, which is similar to the related compound LaOBiPbS3, while the interlayer bonds (M2-S1 bonds) are apparently shorter in La2O2Bi3AgS6. The tunneling electron microscopy (TEM) image confirmed the lattice constant derived from Rietveld refinement (c ~ 20 Å). The electrical resistivity and Seebeck coefficient suggested that the electronic states of La2O2Bi3AgS6 are more metallic than those of LaOBiS2 and LaOBiPbS3. The insertion of a rock-salt-type chalcogenide into the van der Waals gap of BiS2-based layered compounds, such as LaOBiS2, will be a useful strategy for designing new layered functional materials in the layered chalcogenide family.
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Submitted 18 December, 2017;
originally announced December 2017.
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Compositional and temperature evolution of crystal structure of new thermoelectric compound LaOBiS2-xSex
Authors:
Y. Mizuguchi,
A. Miura,
A. Nishida,
O. Miura,
K. Tadanaga,
N. Kumada,
C. H. Lee,
E. Magome,
C. Moriyoshi,
Y. Kuroiwa
Abstract:
We examined the crystal structure of the new thermoelectric material LaOBiS2-xSex, whose thermoelectric performance is enhanced by Se substitution, by using powder synchrotron X-ray diffraction and Rietveld refinement. The emergence of metallic conductivity and enhancement of the thermoelectric power factor of LaOBiS2-xSex can be explained with the higher in-plane chemical pressure caused by the i…
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We examined the crystal structure of the new thermoelectric material LaOBiS2-xSex, whose thermoelectric performance is enhanced by Se substitution, by using powder synchrotron X-ray diffraction and Rietveld refinement. The emergence of metallic conductivity and enhancement of the thermoelectric power factor of LaOBiS2-xSex can be explained with the higher in-plane chemical pressure caused by the increase of Se concentration at the in-plane Ch1 site (Ch = S, Se). High-temperature X-ray diffraction measurements for optimally substituted LaOBiSSe revealed anomalously large atomic displacement parameters (Uiso) for Bi and Ch atoms in the BiCh2 conduction layers. The anisotropic analysis of the atomic displacement parameters (U11 and U33) for the in-plane Bi and Ch1 sites suggested that Bi atoms exhibit large atomic displacement along the c-axis direction above 300 K, which could be the origin of the low thermal conductivity in LaOBiSSe. The large Bi vibration along the c-axis direction could be related to in-plane rattling, which is a new strategy for attaining low thermal conductivity and phonon-glass-electron-crystal states.
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Submitted 21 April, 2016; v1 submitted 3 April, 2016;
originally announced April 2016.
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Structures and Optical Absorption of Bi2OS2 and LaOBiS2
Authors:
Akira Miura,
Yoshikazu Mizuguchi,
Takahiro Takei,
Nobuhiro Kumada,
Eisuke Magome,
Chikako Moriyoshi,
Yoshihiro Kuroiwa,
Kiyoharu Tadanaga
Abstract:
The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 show…
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The band gaps of isostructural Bi2OS2 and LaOBiS2 were examined using optical absorption and discussed with the band structures calculated based on the crystal structures determined using synchrotron X-ray diffraction. The Bi 6p and S 3p orbitals in the Bi-S plane were computationally predicted to constitute the bands near the Fermi level. The optical reflectance spectra of Bi2OS2 and LaOBiS2 showed optical band gaps of ca. 1.0 eV, which were close to the computationally calculated direct band gaps of ca. 0.8 eV. Our results show that Bi2OS2 and LaOBiS2 are semiconductors containing direct band gaps of 0.8-1.0 eV, and they are suggested to be candidates for optoelectronic materials in the near-infrared region without highly toxic elements.
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Submitted 4 December, 2015; v1 submitted 7 August, 2015;
originally announced August 2015.
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In-plane chemical pressure essential for superconductivity in BiCh2-based (Ch: S, Se) layered structure
Authors:
Yoshikazu Mizuguchi,
Akira Miura,
Joe Kajitani,
Takafumi Hiroi,
Osuke Miura,
Kiyoharu Tadanaga,
Nobuhiro Kumada,
Eisuke Magome,
Chikako Moriyoshi,
Yoshihiro Kuroiwa
Abstract:
BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffr…
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BiCh2-based superconductors (Ch: S, Se) are a new series of layered superconductor. However, mechanisms for the emergence of superconductivity in BiCh2-based superconductors have not been clarified. In this study, we have investigated crystal structure of two series of optimally-doped BiCh2-based superconductors, Ce1-xNdxO0.5F0.5BiS2 and LaO0.5F0.5Bi(S1-ySey)2, using powder synchrotron x-ray diffraction in order to reveal the relationship between crystal structure and superconducting properties of the BiCh2-based family. We have found that an enhancement of in-plane chemical pressure would commonly induce bulk superconductivity in both systems. Furthermore, we have revealed that superconducting transition temperature for REO0.5F0.5BiCh2 superconductors could universally be determined by degree of in-plane chemical pressure.
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Submitted 7 April, 2015; v1 submitted 6 April, 2015;
originally announced April 2015.
