-
Quantum embedding study of strain and charge induced Stark effects on the NV$^{-}$ center in diamond
Authors:
Gabriel I. López-Morales,
Joanna M. Zajac,
Johannes Flick,
Carlos A. Meriles,
Cyrus E. Dreyer
Abstract:
The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain long…
▽ More
The NV$^{-}$ color center in diamond has been demonstrated as a powerful nanosensor for quantum metrology, due to the sensitivity of its optical and spin properties to external electric, magnetic, and strain fields. In view of these applications, we use quantum embedding to derive a many-body description of strain and charge induced Stark effects on the NV$^{-}$ center. We quantify how strain longitudinal to the axis of NV$^{-}$ shifts the excited states in energy, while strain with a component transverse to the NV axis splits the degeneracies of the $^{3}E$ and $^{1}E$ states. The largest effects are for the optically relevant $^{3}E$ manifold, which splits into $E_{x}$ and $E_{y}$ with transverse strain. From these responses we extract strain susceptibilities for the $E_{x/y}$ states within the quasi-linear regime. Additionally, we study the many-body dipole matrix elements of the NV$^{-}$ and find a permanent dipole 1.64 D at zero strain, which is $\sim 30 \%$ smaller than that obtained from recent density functional theory calculations. We also determine the transition dipole between the $E_{x}$ and $E_{y}$ and how it evolves with strain.
△ Less
Submitted 11 June, 2024;
originally announced June 2024.
-
Photo-induced charge state dynamics of the neutral and negatively charged silicon vacancy centers in room-temperature diamond
Authors:
G. Garcia-Arellano,
G. I. López-Morales,
N. B. Manson,
J. Flick,
A. A. Wood,
C. A. Meriles
Abstract:
The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at…
▽ More
The silicon vacancy (SiV) center in diamond is drawing much attention due to its optical and spin properties, attractive for quantum information processing and sensing. Comparatively little is known, however, about the dynamics governing SiV charge state interconversion mainly due to challenges associated with generating, stabilizing, and characterizing all possible charge states, particularly at room temperature. Here, we use multi-color confocal microscopy and density functional theory to examine photo-induced SiV recombination - from neutral, to single-, to double-negatively charged - over a broad spectral window in chemical-vapor-deposition diamond under ambient conditions. For the SiV0 to SiV- transition, we find a linear growth of the photo-recombination rate with laser power at all observed wavelengths, a hallmark of single photon dynamics. Laser excitation of SiV-, on the other hand, yields only fractional recombination into SiV2-, a finding we interpret in terms of a photo-activated electron tunneling process from proximal nitrogen atoms.
△ Less
Submitted 16 March, 2024;
originally announced March 2024.
-
Room-temperature photo-chromism of silicon vacancy centers in CVD diamond
Authors:
Alexander Wood,
Artur Lozovoi,
Zi-Huai Zhang,
Sachin Sharma,
Gabriel I. López-Morales,
Harishankar Jayakumar,
Nathalie P. de Leon,
Carlos A. Meriles
Abstract:
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states un…
▽ More
The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing.
△ Less
Submitted 23 November, 2022;
originally announced November 2022.
-
Ab-initio investigation of Er3+ defects in tungsten disulfide
Authors:
Gabriel I. López-Morales,
Alexander Hampel,
Gustavo E. López,
Vinod M. Menon,
Johannes Flick,
Carlos A. Meriles
Abstract:
We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy ($V_{W}$) and at the $Er^{ 3+}$ ion site, even in the presence of a net negative charge in the supercell. The system features a set of intra-gap defect states, some o…
▽ More
We use density functional theory (DFT) to explore the physical properties of an $Er_{ W}$ point defect in monolayer $WS_{ 2}$. Our calculations indicate that electrons localize at the dangling bonds associated with a tungsten vacancy ($V_{W}$) and at the $Er^{ 3+}$ ion site, even in the presence of a net negative charge in the supercell. The system features a set of intra-gap defect states, some of which are reminiscent of those present in isolated $Er^{ 3+}$ ions. In both instances, the level of hybridization is low, i.e., orbitals show either strong Er or W character. Through the calculation of the absorption spectrum as a function of wavelength, we identify a broad set of transitions, including one possibly consistent with the $Er^{ 3+}$ $4I_{ 15/2} \rightarrow 4I_{ 13/2}$ observed in other hosts. Combined with the low native concentration of spin-active nuclei as well as the two-dimensional nature of the host, these properties reveal $Er:WS_{ 2}$ as a potential platform for realizing spin qubits that can be subsequently integrated with other nanoscale optoelectronic devices.
△ Less
Submitted 28 January, 2022;
originally announced January 2022.
-
Investigation of photon emitters in Ce-implanted hexagonal boron nitride
Authors:
Gabriel I. López-Morales,
Mingxing Li,
Alexander Hampel,
Sitakanta Satapathy,
Nicholas V. Proscia,
Harishankar Jayakumar,
Artur Lozovoi,
Daniela Pagliero,
Gustavo E. Lopez,
Vinod M. Menon,
Johannes Flick,
Carlos A. Meriles
Abstract:
Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence mi…
▽ More
Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts.
△ Less
Submitted 2 October, 2021;
originally announced October 2021.
-
Spontaneous emission dynamics of $Eu^{ 3+}$ ions coupled to hyperbolic metamaterials
Authors:
Gabriel I. López-Morales,
Mingxing Li,
Ravindra K. Yadav,
Harshavardhan R. Kalluru,
Jaydeep K. Basu,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Sub-wavelength nanostructured systems with tunable electromagnetic properties, such as hyperbolic metamaterials (HMMs), provide a useful platform to tailor spontaneous emission processes. Here, we investigate a system comprising $Eu^{ 3+}(NO_{3})_{3}6H_{2}O$ nanocrystals on an HMM structure featuring a hexagonal array of Ag-nanowires in a porous $Al_{2}O_{3}$ matrix. The HMM-coupled $Eu^{ 3+}$ ion…
▽ More
Sub-wavelength nanostructured systems with tunable electromagnetic properties, such as hyperbolic metamaterials (HMMs), provide a useful platform to tailor spontaneous emission processes. Here, we investigate a system comprising $Eu^{ 3+}(NO_{3})_{3}6H_{2}O$ nanocrystals on an HMM structure featuring a hexagonal array of Ag-nanowires in a porous $Al_{2}O_{3}$ matrix. The HMM-coupled $Eu^{ 3+}$ ions exhibit up to a 2.4-fold increase of their decay rate, accompanied by an enhancement of the emission rate of the $^{ 5}D_{0}\rightarrow$ $^{ 7}F_{2}$ transition. Using finite-difference time-domain modeling, we corroborate these observations with the increase in the photonic density of states seen by the $Eu^{ 3+}$ ions in the proximity of the HMM. Our results indicate HMMs can serve as a valuable tool to control the emission from weak transitions, and hence hint at a route towards more practical applications of rare-earth ions in nanoscale optoelectronics and quantum devices.
△ Less
Submitted 10 January, 2021;
originally announced January 2021.
-
Room-temperature Single Photon Emitters in Cubic Boron Nitride Nanocrystals
Authors:
Gabriel I. López-Morales,
Aziza Almanakly,
Sitakanta Satapathy,
Nicholas V. Proscia,
Harishankar Jayakumar,
Valery N. Khabashesku,
Pulickel M. Ajayan,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously…
▽ More
Color centers in wide bandgap semiconductors are attracting broad attention as platforms for quantum technologies relying on room-temperature single-photon emission (SPE), and for nanoscale metrology applications building on the centers' response to electric and magnetic fields. Here, we demonstrate room-temperature SPE from defects in cubic boron nitride (cBN) nanocrystals, which we unambiguously assign to the cubic phase using spectrally resolved Raman imaging. These isolated spots show photoluminescence (PL) spectra with zero-phonon lines (ZPLs) within the visible region (496-700 nm) when subject to sub-bandgap laser excitation. Second-order autocorrelation of the emitted photons reveals antibunching with $g^{2}$ ~ 0.2 and a decay constant of 2.75 ns that is further confirmed through fluorescence lifetime measurements. The results presented herein prove the existence of optically addressable isolated quantum emitters originating from defects in cBN, making this material an interesting platform for opto-electronic devices and quantum applications.
△ Less
Submitted 24 December, 2019;
originally announced December 2019.
-
Toward the Identification of Atomic Defects in Hexagonal Boron Nitride: X-Ray Photoelectron Spectroscopy and First-Principles Calculations
Authors:
Gabriel I. López-Morales,
Nicholas V. Proscia,
Gustavo E. López,
Carlos A. Meriles,
Vinod M. Menon
Abstract:
Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of the local environment on the defect physical properties remain elusive. Here we articulate X-ray photoelectron spectroscopy (XPS) and first-principles calculati…
▽ More
Defects in hexagonal boron nitride (hBN) exhibit single-photon emission (SPE) and are thus attracting broad interest as platforms for quantum information and spintronic applications. However, the atomic structure and the specific impact of the local environment on the defect physical properties remain elusive. Here we articulate X-ray photoelectron spectroscopy (XPS) and first-principles calculations to discern the experimentally-observed point defects responsible for the quantum emission observed in hBN. XPS measurements show a broad band, which was deconvolved and then assigned to $N_{B}V_{N}$, $V_{N}$, $C_{B}$, $C_{B}V_{N}$, and $O_{2B}V_{N}$ defect structures using Density Functional Theory (DFT) core-level binding energy (BE) calculations.
△ Less
Submitted 14 November, 2018;
originally announced November 2018.
