Showing 1–15 of 15 results for author: Lozovoi, A

Quantum Noise Spectroscopy of Critical Slowing Down in an Atomically Thin Magnet

Authors: Mark E. Ziffer, Francisco Machado, Benedikt Ursprung, Artur Lozovoi, Aya Batoul Tazi, Zhiyang Yuan, Michael E. Ziebel, Tom Delord, Nanyu Zeng, Evan Telford, Daniel G. Chica, Dane W. deQuilettes, Xiaoyang Zhu, James C. Hone, Kenneth L. Shepard, Xavier Roy, Nathalie P. de Leon, Emily J. Davis, Shubhayu Chatterjee, Carlos A. Meriles, Jonathan S. Owen, P. James Schuck, Abhay N. Pasupathy

Abstract: Low frequency critical fluctuations in magnetic materials encode important information about the physics of magnetic ordering, especially in the associated critical exponents. While a number of techniques have been established to study magnetic critical fluctuations in bulk materials, few approaches maintain the required microscopic resolution, temporal range, and signal sensitivity to quantitativ… ▽ More Low frequency critical fluctuations in magnetic materials encode important information about the physics of magnetic ordering, especially in the associated critical exponents. While a number of techniques have been established to study magnetic critical fluctuations in bulk materials, few approaches maintain the required microscopic resolution, temporal range, and signal sensitivity to quantitatively analyze critical fluctuations in magnetic phases of 2D materials. Using nitrogen-vacancy (NV) centers in diamond as quantum probes, we implement $T_2$ (spin decoherence) noise magnetometry to quantitatively study critical dynamics in a tri-layer sample of the Van der Waals magnetic material CrSBr. We characterize critical fluctuations across the magnetic phase transition in CrSBr by analyzing the NV spin echo coherence decay on time scales that approach the characteristic fluctuation correlation time $τ_c$ at criticality, allowing us to study the temperature dependence of critical slowing down. By modelling the spin echo decoherence using theoretical models for critical dynamics, we are able to extract the critical exponent $ν$ for the correlation length. We find a value for $ν$ which deviates from the Ising prediction and suggests the role of long-range dipolar interactions in modifying the critical behavior of magnetic fluctuation modes in CrSBr at the 2D limit. We further compare the divergence of correlation length in CrSBr to the predicted exponential divergence for 2D XY criticality, and find evidence suggesting the possibility of such behavior in a temperature window near $T_C$ where static magnetic domains are absent. Our work provides a first demonstration of the capability of decoherence based NV noise magnetometry to quantitatively analyze critical scaling laws in 2D materials. △ Less

Submitted 8 July, 2024; originally announced July 2024.

Comments: 9 pages, 4 figures

3D-mapping and manipulation of photocurrent in an optoelectronic diamond device

Authors: A. A. Wood, D. J. McCloskey, N. Dontschuk, A. Lozovoi, R. M. Goldblatt, T. Delord, D. A. Broadway, J. -P. Tetienne, B. C. Johnson, K. T. Mitchell, C. T. -K. Lew, C. A. Meriles, A. M. Martin

Abstract: Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailor… ▽ More Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailored to these unique systems, and the presence of optically-active defect centers in these materials offers a non-perturbative, in-situ characterisation system. Here, we combine charge-state sensitive optical microscopy and photoelectric detection of nitrogen-vacancy (NV) centres to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. We optically control the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. We then optically engineered conducting channels that control carrier flow, key steps towards optically reconfigurable, wide bandgap designer optoelectronics. We anticipate our approach might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic technologies. △ Less

Submitted 10 February, 2024; originally announced February 2024.

Comments: 6 pages main text + 11 pages supplement, 3 figures, 8 supplementary figures. Comments welcome

Dynamic-nuclear-polarization-weighted spectroscopy of multi-spin electronic-nuclear clusters

Authors: Roberta Pigliapochi, Daniela Pagliero, Lisandro Buljubasich, Artur Lozovoi, Rodolfo H. Acosta, Pablo R. Zangara, Carlos A. Meriles

Abstract: Nuclear spins and paramagnetic centers in a solid randomly group to form clusters featuring nearly-degenerate, hybrid states whose dynamics are central to processes involving nuclear spin-lattice relaxation and diffusion. Their characterization, however, has proven notoriously difficult mostly due to their relative isolation and comparatively low concentration. Here, we combine field-cycling exper… ▽ More Nuclear spins and paramagnetic centers in a solid randomly group to form clusters featuring nearly-degenerate, hybrid states whose dynamics are central to processes involving nuclear spin-lattice relaxation and diffusion. Their characterization, however, has proven notoriously difficult mostly due to their relative isolation and comparatively low concentration. Here, we combine field-cycling experiments, optical spin pumping, and variable radio-frequency (RF) excitation to probe transitions between hybrid multi-spin states formed by strongly coupled electronic and nuclear spins in diamond. Leveraging bulk nuclei as a collective time-integrating sensor, we probe the response of these spin clusters as we simultaneously vary the applied magnetic field and RF excitation to reconstruct multi-dimensional spectra. We uncover complex nuclear polarization patterns of alternating sign that we qualitatively capture through analytical and numerical modeling. Our results unambiguously expose the impact that strongly-hyperfine-coupled nuclei can have on the spin dynamics of the crystal, and inform future routes to spin cluster control and detection. △ Less

Submitted 22 June, 2023; originally announced June 2023.

Journal ref: Phys. Rev. B 107, 214202 (2023)

Semiempirical $\textit{ab initio}$ modeling of bound states of deep defects in semiconductor quantum technologies

Authors: YunHeng Chen, Lachlan Oberg, Johannes Flick, Artur Lozovoi, Carlos A. Meriles, Marcus W. Doherty

Abstract: A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the absence of appropriate multiscale models capable of accurately representing the atomic properties of these defects and their impact on device performanc… ▽ More A significant hurdle in developing high-performance semiconductor quantum technologies utilizing deep defects is related to charge dynamics. Unfortunately, progress in modeling their charge dynamics has been hindered over recent decades due to the absence of appropriate multiscale models capable of accurately representing the atomic properties of these defects and their impact on device performance. Here, we present a semi-\textit{ab initio} method for modeling the bound states of deep defects in semiconductor quantum technologies, applied to the negatively charged nitrogen vacancy (NV$^-$) center in diamond. We employ density functional theory calculations to construct accurate potentials for an effective mass model, which allow us to unveil the structure of the bound hole states. We develop a model to calculate the nonradiative capture cross sections, which agrees with experiment within one order of magnitude. Finally, we present our attempt at constructing the photoionization spectrum of NV$^0\rightarrow$ NV$^-$ + bound hole, showing that the electronic transitions of the bound holes can be distinguished from phonon sidebands. This paper offers a practical and efficient solution to a long-standing challenge in understanding the charge dynamics of deep defects. △ Less

Submitted 13 May, 2024; v1 submitted 20 June, 2023; originally announced June 2023.

Comments: Published version in PRB

Journal ref: Phys. Rev. B 109, L201115 (2024)

Detection and modeling of hole capture by single point defects under variable electric fields

Authors: Artur Lozovoi, YunHeng Chen, Gyorgy Vizkelethy, Edward Bielejec, Johannes Flick, Marcus W. Doherty, Carlos A. Meriles

Abstract: Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an ex… ▽ More Understanding carrier trapping in solids has proven key to semiconductor technologies but observations thus far have relied on ensembles of point defects, where the impact of neighboring traps or carrier screening is often important. Here, we investigate the capture of photo-generated holes by an individual negatively-charged nitrogen-vacancy (NV) center in diamond at room temperature. Using an externally gated potential to minimize space-charge effects, we find the capture probability under electric fields of variable sign and amplitude shows an asymmetric-bell-shaped response with maximum at zero voltage. To interpret these observations, we run semi-classical Monte Carlo simulations modeling carrier trapping through a cascade process of phonon emission, and obtain electric-field-dependent capture probabilities in good agreement with experiment. Since the mechanisms at play are insensitive to the trap characteristics, the capture cross sections we observe - largely exceeding those derived from ensemble measurements - should also be present in materials platforms other than diamond. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Journal ref: Nano Lett. 23, 4495 (2023)

Room-temperature photo-chromism of silicon vacancy centers in CVD diamond

Authors: Alexander Wood, Artur Lozovoi, Zi-Huai Zhang, Sachin Sharma, Gabriel I. López-Morales, Harishankar Jayakumar, Nathalie P. de Leon, Carlos A. Meriles

Abstract: The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states un… ▽ More The silicon-vacancy (SiV) center in diamond is typically found in three stable charge states, SiV0, SiV- and SiV2-, but studying the processes leading to their formation is challenging, especially at room temperature, due to their starkly different photo-luminescence rates. Here, we use confocal fluorescence microscopy to activate and probe charge interconversion between all three charge states under ambient conditions. In particular, we witness the formation of SiV0 via the two-step capture of diffusing, photo-generated holes, a process we expose both through direct SiV0 fluorescence measurements at low temperatures and confocal microscopy observations in the presence of externally applied electric fields. Further, we show that continuous red illumination induces the converse process, first transforming SiV0 into SiV-, then into SiV2-. Our results shed light on the charge dynamics of SiV and promise opportunities for nanoscale sensing and quantum information processing. △ Less

Submitted 23 November, 2022; originally announced November 2022.

Spin dynamics of a solid-state qubit in proximity to a superconductor

Authors: Richard Monge, Tom Delord, Nicholas Proscia, Zav Shotan, Harishankar Jayakumar, Jacob Henshaw, Pablo R. Zangara, Artur Lozovoi, Daniela Pagliero, Pablo D. Esquinazi, Toshu An, Inti Sodemann, Vinod M. Menon, Carlos A. Meriles

Abstract: A broad effort is underway to understand and harness the interaction between superconductors and spin-active color centers with an eye on the realization of hybrid quantum devices and novel imaging modalities of superconducting materials. Most work, however, overlooks the complex interplay between either system and the environment created by the color center host. Here we use an all-diamond scanni… ▽ More A broad effort is underway to understand and harness the interaction between superconductors and spin-active color centers with an eye on the realization of hybrid quantum devices and novel imaging modalities of superconducting materials. Most work, however, overlooks the complex interplay between either system and the environment created by the color center host. Here we use an all-diamond scanning probe to investigate the spin dynamics of a single nitrogen-vacancy (NV) center proximal to a high-critical-temperature superconducting film in the presence of a weak magnetic field. We find that the presence of the superconductor increases the NV spin coherence lifetime, a phenomenon we tentatively rationalize as a change in the electric noise due to a superconductor-induced redistribution of charge carriers near the NV site. We build on these findings to demonstrate transverse-relaxation-time-weighted imaging of the superconductor film. These results shed light on the complex surface dynamics governing the spin coherence of shallow NVs while simultaneously paving the route to new forms of noise spectroscopy and imaging of superconductors. △ Less

Submitted 15 July, 2022; originally announced July 2022.

Imaging dark charge emitters in diamond via carrier-to-photon conversion

Authors: Artur Lozovoi, Gyorgy Vizkelethy, Edward Bielejec, Carlos A. Meriles

Abstract: The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity… ▽ More The application of color centers in wide-bandgap semiconductors to nanoscale sensing and quantum information processing largely rests on our knowledge of the surrounding crystalline lattice, often obscured by the countless classes of point defects the material can host. Here we monitor the fluorescence from a negatively charged nitrogen-vacancy (NV-) center in diamond as we illuminate its vicinity. Cyclic charge state conversion of neighboring point defects sensitive to the excitation beam leads to a position-dependent stream of photo-generated carriers whose capture by the probe NV- leads to a fluorescence change. This "charge-to-photon" conversion scheme allows us to image other individual point defects surrounding the probe NV, including non-fluorescent "single-charge emitters" that would otherwise remain unnoticed. Given the ubiquity of color center photo-chromism, this strategy may likely find extensions to material systems other than diamond. △ Less

Submitted 13 January, 2022; originally announced January 2022.

Journal ref: Sci. Adv. 8, eabl9402 (2022)

Optical activation and detection of charge transport between individual color centers in room-temperature diamond

Authors: Artur Lozovoi, Harishankar Jayakumar, Damon Daw, Gyorgy Vizkelethy, Edward Bielejec, Marcus W. Doherty, Johannes Flick, Carlos A. Meriles

Abstract: Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a… ▽ More Charge control of color centers in semiconductors promises opportunities for novel forms of sensing and quantum information processing. Here, we articulate confocal fluorescence microscopy and magnetic resonance protocols to induce and probe charge transport between discrete sets of engineered nitrogen-vacancy (NV) centers in diamond, down to the level of individual defects. In our experiments, a "source" NV undergoes optically-driven cycles of ionization and recombination to produce a stream of photo-generated carriers, one of which we subsequently capture via a "target" NV several micrometers away. We use a spin-to-charge conversion scheme to encode the spin state of the source color center into the charge state of the target, in the process allowing us to set an upper bound to carrier injection from other background defects. We attribute our observations to the action of unscreened Coulomb potentials producing giant carrier capture cross-sections, orders of magnitude greater than those typically attained in ensemble measurements. Besides their fundamental interest, these results open intriguing prospects in the use of free carriers as a quantum bus to mediate effective interactions between paramagnetic defects in a solid-state chip. △ Less

Submitted 23 October, 2021; originally announced October 2021.

Journal ref: Nature Electronics 4, 717 (2021)

Investigation of photon emitters in Ce-implanted hexagonal boron nitride

Authors: Gabriel I. López-Morales, Mingxing Li, Alexander Hampel, Sitakanta Satapathy, Nicholas V. Proscia, Harishankar Jayakumar, Artur Lozovoi, Daniela Pagliero, Gustavo E. Lopez, Vinod M. Menon, Johannes Flick, Carlos A. Meriles

Abstract: Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence mi… ▽ More Color centers in hexagonal boron nitride (hBN) are presently attracting broad interest as a novel platform for nanoscale sensing and quantum information processing. Unfortunately, their atomic structures remain largely elusive and only a small percentage of the emitters studied thus far has the properties required to serve as optically addressable spin qubits. Here, we use confocal fluorescence microscopy at variable temperature to study a new class of point defects produced via cerium ion implantation in thin hBN flakes. We find that, to a significant fraction, emitters show bright room-temperature emission, and good optical stability suggesting the formation of Ce-based point defects. Using density functional theory (DFT) we calculate the emission properties of candidate emitters, and single out the CeVB center - formed by an interlayer Ce atom adjacent to a boron vacancy - as one possible microscopic model. Our results suggest an intriguing route to defect engineering that simultaneously exploits the singular properties of rare-earth ions and the versatility of two-dimensional material hosts. △ Less

Submitted 2 October, 2021; originally announced October 2021.

Journal ref: Optical Materials Express Vol. 11, Issue 10, pp. 3478-3485 (2021)

Probing metastable space-charge potentials in a wide bandgap semiconductor

Authors: Artur Lozovoi, Harishankar Jayakumar, Damon Daw, Ayesha Lakra, Carlos A. Meriles

Abstract: While the study of space charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide bandgap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external… ▽ More While the study of space charge potentials has a long history, present models are largely based on the notion of steady state equilibrium, ill-suited to describe wide bandgap semiconductors with moderate to low concentrations of defects. Here we build on color centers in diamond both to locally inject carriers into the crystal and probe their evolution as they propagate in the presence of external and internal potentials. We witness the formation of metastable charge patterns whose shape - and concomitant field - can be engineered through the timing of carrier injection and applied voltages. With the help of previously crafted charge patterns, we unveil a rich interplay between local and extended sources of space charge field, which we then exploit to show space-charge-induced carrier guiding. △ Less

Submitted 19 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Lett. 125, 256602 (2020)

Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers

Authors: A. Lozovoi, D. Daw, H. Jayakumar, C. A. Meriles

Abstract: Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen-vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance compa… ▽ More Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen-vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly-detected photo-luminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microscopic structure and composition remain elusive. Our results may prove relevant to the growing set of applications that rely on CVD-grown single crystal diamond. △ Less

Submitted 14 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 053602 (2020)

Unbiasing the initiator approximation in Full Configuration Interaction Quantum Monte Carlo

Authors: Khaldoon Ghanem, Alexander Y. Lozovoi, Ali Alavi

Abstract: We identify and rectify a crucial source of bias in the initiator FCIQMC algorithm. Non-initiator determinants (i.e. determinants whose population is below the initiator threshold) are subject to a systematic {\em undersampling} bias, which in large systems leads to a bias in the energy when an insufficient number of walkers is used. We show that the acceptance probability ($p_{acc}$), that a non-… ▽ More We identify and rectify a crucial source of bias in the initiator FCIQMC algorithm. Non-initiator determinants (i.e. determinants whose population is below the initiator threshold) are subject to a systematic {\em undersampling} bias, which in large systems leads to a bias in the energy when an insufficient number of walkers is used. We show that the acceptance probability ($p_{acc}$), that a non-initiator determinant has its spawns accepted, can be used to unbias the initiator bias, in a simple and accurate manner, by reducing the applied shift to the non-initiator proportionately to $p_{acc}$. This modification preserves the property that in the large walker limit, when $p_{acc}\rightarrow1$, the unbiasing procedure disappears, and the initiator approximation becomes exact. We demonstrate that this algorithm shows rapid convergence to the FCI limit with respect to walker number, and furthermore largely removes the dependence of the algorithm on the initiator threshold, enabling highly accurate results to be obtained even with large values of the threshold. This is exemplified in the case of butadiene/ANO-L-pVDZ and benzene/cc-pVDZ, correlating 22 and 30 electrons in 82 and 108 orbitals respectively. In butadiene $5\times 10^7$ and in benzene $10^8$ walkers suffice to obtain an energy to within a milli-Hartree of the CCSDT(Q) result, in Hilbert spaces of $10^{26}$ and $10^{35}$ respectively. Essentially converged results require $\sim 10^8$ walkers for butadiene and $\sim 10^9$ walkers for benzene, and lie slightly lower than CCSDT(Q). Owing to large-scale parallelisability, these calculations can be executed in a matter of hours on a few hundred processors. The present method largely solves the initiator-bias problems that the initiator method suffered from when applied to medium-sized molecules. △ Less

Submitted 25 November, 2019; originally announced December 2019.

Comments: 12 pages, 4 figures

Journal ref: J. Chem. Phys. 151, 224108 (2019)

Boron in copper: a perfect misfit in the bulk and cohesion enhancer at a grain boundary

Authors: A. Y. Lozovoi, A. T. Paxton

Abstract: Our ab initio study suggests that boron segregation to the Sigma 5(310)[001] grain boundary should strengthen the boundary up to 1.5 ML coverage (15.24 at/nm^2). The maximal effect is observed at 0.5 ML and corresponds to boron atoms filling exclusively grain boundary interstices. In copper bulk, B causes significant distortion both in interstitial and regular lattice sites for which boron atoms… ▽ More Our ab initio study suggests that boron segregation to the Sigma 5(310)[001] grain boundary should strengthen the boundary up to 1.5 ML coverage (15.24 at/nm^2). The maximal effect is observed at 0.5 ML and corresponds to boron atoms filling exclusively grain boundary interstices. In copper bulk, B causes significant distortion both in interstitial and regular lattice sites for which boron atoms are either too big or too small. The distortion is compensated to large extent when the interstitial and substitutional boron combine together to form a strongly bound dumbell. Our prediction is that bound boron impurities should appear in sizable proportion if not dominate in most experimental conditions. A large discrepancy between calculated heats of solution and experimental terminal solubility of B in Cu is found, indicating either a sound failure of the local density approximation or, more likely, strongly overestimated solubility limits in the existing B-Cu phase diagram. △ Less

Submitted 10 November, 2007; originally announced November 2007.

Comments: 16 pages, 9 figures

Structural and chemical embrittlement of grain boundaries by impurities: a general theory and first principles calculations for copper

Authors: A. Y. Lozovoi, A. T. Paxton, M. W. Finnis

Abstract: First principles calculations of the Sigma 5 (310)[001] symmetric tilt grain boundary in Cu with Bi, Na, and Ag substitutional impurities provide evidence that in the phenomenon of Bi embrittlement of Cu grain boundaries electronic effects do not play a major role; on the contrary, the embrittlement is mostly a structural or "size" effect. Na is predicted to be nearly as good an embrittler as Bi… ▽ More First principles calculations of the Sigma 5 (310)[001] symmetric tilt grain boundary in Cu with Bi, Na, and Ag substitutional impurities provide evidence that in the phenomenon of Bi embrittlement of Cu grain boundaries electronic effects do not play a major role; on the contrary, the embrittlement is mostly a structural or "size" effect. Na is predicted to be nearly as good an embrittler as Bi, whereas Ag does not embrittle the boundary in agreement with experiment. While we reject the prevailing view that "electronic" effects (i.e., charge transfer) are responsible for embrittlement, we do not exclude the role of chemistry. However numerical results show a striking equivalence between the alkali metal Na and the semi metal Bi, small differences being accounted for by their contrasting "size" and "softness" (defined here). In order to separate structural and chemical effects unambiguously if not uniquely, we model the embrittlement process by taking the system of grain boundary and free surfaces through a sequence of precisely defined gedanken processes; each of these representing a putative mechanism. We thereby identify three mechanisms of embrittlement by substitutional impurities, two of which survive in the case of embrittlement or cohesion enhancement by interstitials. Two of the three are purely structural and the third contains both structural and chemical elements that by their very nature cannot be further unravelled. We are able to take the systems we study through each of these stages by explicit computer simulations and assess the contribution of each to the nett reduction in intergranular cohesion. The conclusion we reach is that embrittlement by both Bi and Na is almost exclusively structural in origin; that is, the embrittlement is a size effect. △ Less

Submitted 10 September, 2006; v1 submitted 23 August, 2006; originally announced August 2006.

Comments: 13 pages, 5 figures; Accepted in Phys. Rev. B