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Epitaxial Thin Films of a Chalcogenide Perovskite
Authors:
Mythili Surendran,
Huandong Chen,
Boyang Zhao,
Arashdeep Singh Thind,
Shantanu Singh,
Thomas Orvis,
Huan Zhao,
Jae-Kyung Han,
Han Htoon,
Megumi Kawasaki,
Rohan Mishra,
Jayakanth Ravichandran
Abstract:
Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane…
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Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface the films are polycrystalline with a large number of extended defects suggesting the potential for further improvement in growth. X-Ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS3 films thus far. Our study opens up opportunities to realize epitaxial thin films, heterostructures, and superlattices of chalcogenide perovskites to probe fundamental physical phenomena and the resultant electronic and photonic device technologies.
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Submitted 24 May, 2021;
originally announced May 2021.
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In situ Monitoring of Composition and Sensitivity to Growth Parameters of Pulsed Laser Deposition
Authors:
Thomas Orvis,
Harish Kumarasubramanian,
Mythili Surendran,
Shanmukh Kutagulla,
Austin Cunniff,
Jayakanth Ravichandran
Abstract:
Complex oxide perovskites have been widely studied for their diverse functional properties. When dimensionally reduced to epitaxial thin films and heterostructures these properties are frequently tunable, and the symmetry-breaking inherent to thin film structures can result in the emergence of new, novel, phenomena and properties. However, the ability to control and harness these structures relies…
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Complex oxide perovskites have been widely studied for their diverse functional properties. When dimensionally reduced to epitaxial thin films and heterostructures these properties are frequently tunable, and the symmetry-breaking inherent to thin film structures can result in the emergence of new, novel, phenomena and properties. However, the ability to control and harness these structures relies on an atomic-level understanding and control of the growth process, made challenging by the lack of suitable in situ compositional characterization tools. In this work, the compositional-dependence of SrTiO3 on pulsed laser deposition growth parameters is investigated with in situ Auger electron spectroscopy and ex situ thin film x-ray diffraction, and verified with a simple escape depth model. We show that this is a suitable technique for monitoring subtle compositional shifts occurring during the deposition process, with broad implications for the continued development of thin film synthesis techniques.
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Submitted 9 February, 2021;
originally announced February 2021.
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Direct Observation and Control of Surface Termination in Perovskite Oxide Heterostructures
Authors:
Thomas Orvis,
Tengfei Cao,
Mythili Surendran,
Harish Kumarasubramanian,
Austin Cunniff,
Rohan Mishra,
Jayakanth Ravichandran
Abstract:
The interfacial behavior of quantum materials leads to emergent phenomena such as two dimensional electron gases, quantum phase transitions, and metastable functional phases. Probes for in situ and real time surface sensitive characterization are critical for active monitoring and control of epitaxial synthesis, and hence the atomic-scale engineering of heterostructures and superlattices. Terminat…
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The interfacial behavior of quantum materials leads to emergent phenomena such as two dimensional electron gases, quantum phase transitions, and metastable functional phases. Probes for in situ and real time surface sensitive characterization are critical for active monitoring and control of epitaxial synthesis, and hence the atomic-scale engineering of heterostructures and superlattices. Termination switching, especially as an interfacial process in ternary complex oxides, has been studied using a variety of probes, often ex situ; however, direct observation of this phenomena is lacking. To address this need, we establish in situ and real time reflection high energy electron diffraction and Auger electron spectroscopy for pulsed laser deposition, which provide structural and compositional information of the surface during film deposition. Using this unique capability, we show, for the first time, the direct observation and control of surface termination in complex oxide heterostructures of SrTiO3 and SrRuO3. Density-functional-theory calculations capture the energetics and stability of the observed structures and elucidate their electronic behavior. This demonstration opens up a novel approach to monitor and control the composition of materials at the atomic scale to enable next-generation heterostructures for control over emergent phenomena, as well as electronics, photonics, and energy applications.
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Submitted 9 February, 2021;
originally announced February 2021.
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In situ Auger electron spectroscopy of complex oxide surfaces grown by pulsed laser deposition
Authors:
Thomas Orvis,
Mythili Surendran,
Yang Liu,
Austin Cunniff,
Jayakanth Ravichandran
Abstract:
The authors report in situ Auger electron spectroscopy (AES) of the surfaces of complex oxides thin films grown by pulsed laser deposition (PLD). The authors demonstrate the utility of the technique in studying chemical composition by collecting characteristic Auger spectra of elements from samples such as complex oxide thin films and single crystals as well as metal foils. In the case of thin fil…
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The authors report in situ Auger electron spectroscopy (AES) of the surfaces of complex oxides thin films grown by pulsed laser deposition (PLD). The authors demonstrate the utility of the technique in studying chemical composition by collecting characteristic Auger spectra of elements from samples such as complex oxide thin films and single crystals as well as metal foils. In the case of thin films, AES studies can be performed with single unit cell precision by monitoring thickness during deposition with reflection high energy electron diffraction (RHEED). The authors address some of the challenges in achieving in situ and real time AES studies on complex oxide thin films grown by PLD. Sustained layer-by-layer PLD growth of a CaTiO3/LaMnO3 superlattice allows depth-resolved chemical composition analysis during the growth process. The evolution of the Auger spectra of the elements from individual layers were used to perform chemical analysis with monolayer-depth resolution.
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Submitted 16 July, 2019;
originally announced July 2019.
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Epitaxial Growth and Electrical Properties of VO2 on LSAT (111) substrate
Authors:
Yang Liu,
Shanyuan Niu,
Thomas Orvis,
Haimang Zhang,
Han Wang,
Jayakanth Ravichandran
Abstract:
We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and VO2[001]||L…
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We report the epitaxial growth and the electrical properties, especially the metal-to-insulator transition (MIT), of vanadium dioxide (VO2) thin films synthesized on LSAT (111) ([LaAlO3]0.3[Sr2AlTaO6]0.7) substrates by pulsed laser deposition. X-ray diffraction studies show that the epitaxial relationship between the VO2 thin films and LSAT substrate is given as VO2(020)||LSAT(111) and VO2[001]||LSAT[11-2]. We observed a sharp four orders of magnitude change in the longitudinal resistance for the VO2 thin films around the transition temperature. We also measured distinct Raman spectra below and above the transition point indicating a concomitant structural transition between the insulator and metallic phases, in agreement with past investigations.
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Submitted 27 September, 2018;
originally announced September 2018.
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Band-Gap Control via Structural and Chemical Tuning of Transition Metal Perovskite Chalcogenides
Authors:
Shanyuan Niu,
Huaixun Huyan,
Yang Liu,
Matthew Yeung,
Kevin Ye,
Louis Blankemeier,
Thomas Orvis,
Debarghya Sarkar,
David J. Singh,
Rehan Kapadia,
Jayakanth Ravichandran
Abstract:
Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which…
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Transition metal perovskite chalcogenides (TMPC) are a new class of semiconductor materials with broad tunability of physical properties due to their chemical and structural flexibility. Theoretical calculations show that band gaps of TMPCs are tunable from Far IR to UV spectrum. Amongst these materials, more than a handful of materials have energy gap and very high absorption coefficients, which are appropriate for optoelectronic applications, especially solar energy conversion. Despite several promising theoretical predictions, very little experimental studies on their physical properties are currently available, especially optical properties. We report a new synthetic route towards high quality bulk ceramic TMPCs and systematic study of three phases, SrZrS3 in two different room temperature stabilized phases and one of BaZrS3. All three materials were synthesized with a catalyzed solid-state reaction process in sealed ampoules. Structural and chemical characterizations establish high quality of the samples, which is confirmed by the intense room temperature photoluminescence (PL) spectra showing direct band gaps around 1.53eV, 2.13eV and 1.81eV respectively. The potential of these materials for solar energy conversion was evaluated by measurement of PL quantum efficiency and estimate of quasi Fermi level splitting.
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Submitted 25 April, 2018;
originally announced April 2018.
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Magnetic structure of Yb2Pt2Pb: Ising moments on the Shastry-Sutherland Lattice
Authors:
W. Miiller,
L. S. Wu,
M. S. Kim,
T. Orvis,
J. W. Simonson,
M. Gamaza,
D. E. McNally,
C. S. Nelson,
G. Ehlers,
A. Podlesnyak,
J. S. Helton,
Y. Zhao,
Y. Qiu,
J. R. D. Copley,
J. W. Lynn,
I. Zaliznyak,
M. C. Aronson
Abstract:
Neutron diffraction measurements were carried out on single crystals and powders of Yb2Pt2Pb, where Yb moments form planes of orthogonal dimers in the frustrated Shastry-Sutherland Lattice (SSL). Yb2Pt2Pb orders antiferromagnetically at TN=2.07 K, and the magnetic structure determined from these measurements features the interleaving of two orthogonal sublattices into a 5*5*1 magnetic supercell th…
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Neutron diffraction measurements were carried out on single crystals and powders of Yb2Pt2Pb, where Yb moments form planes of orthogonal dimers in the frustrated Shastry-Sutherland Lattice (SSL). Yb2Pt2Pb orders antiferromagnetically at TN=2.07 K, and the magnetic structure determined from these measurements features the interleaving of two orthogonal sublattices into a 5*5*1 magnetic supercell that is based on stripes with moments perpendicular to the dimer bonds, which are along (110) and (-110). Magnetic fields applied along (110) or (-110) suppress the antiferromagnetic peaks from an individual sublattice, but leave the orthogonal sublattice unaffected, evidence for the Ising character of the Yb moments in Yb2Pt2Pb. Specific heat, magnetic susceptibility, and electrical resistivity measurements concur with neutron elastic scattering results that the longitudinal critical fluctuations are gapped with E about 0.07 meV.
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Submitted 1 August, 2014;
originally announced August 2014.
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Low field magnetic response of the non-centrosymmetric superconductor YPtBi
Authors:
T. V. Bay,
M. Jackson,
C. Paulsen,
C. Baines,
A. Amato,
T. Orvis,
M. C. Aronson,
Y. K. Huang,
A. de Visser
Abstract:
The low-field magnetic response of the non-centrosymmetric superconductor YPtBi ($T_c =0.77$ K) is investigated. Ac-susceptibility and dc-magnetization measurements provide solid evidence for bulk superconductivity with a volume fraction of $\sim 70\%$. The lower critical field is surprisingly small: $B_{c1} = 0.008$ mT $(T \rightarrow 0)$. Muon spin rotation experiments in a transverse magnetic f…
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The low-field magnetic response of the non-centrosymmetric superconductor YPtBi ($T_c =0.77$ K) is investigated. Ac-susceptibility and dc-magnetization measurements provide solid evidence for bulk superconductivity with a volume fraction of $\sim 70\%$. The lower critical field is surprisingly small: $B_{c1} = 0.008$ mT $(T \rightarrow 0)$. Muon spin rotation experiments in a transverse magnetic field of 0.01 T show a weak increase of the Gaussian damping rate $σ_{TF}$ below $T_c$, which yields a London penetration depth $λ= 1.6 \pm 0.2~ μ$m. The zero-field Kubo-Toyabe relaxation rate $σ_{KT}$ equals $0.129 \pm 0.004~μ$s$^{-1}$ and does not show a significant change below $T_c$. This puts an upper bound of 0.04 mT on the spontaneous magnetic field associated with a possible odd-parity component in the superconducting order parameter.
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Submitted 11 December, 2013;
originally announced December 2013.
