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Comparative study of rare earth hexaborides using high resolution angle-resolved photoemission
Authors:
Shyama V. Ramankutty,
Nick de Jong,
Ying-Kai Huang,
Berend Zwartsenberg,
Freek Massee,
Tran V. Bay,
Mark S. Golden,
Emmanouil Frantzeskakis
Abstract:
Strong electron correlations in rare earth hexaborides can give rise to a variety of interesting phenomena like ferromagnetism, Kondo hybridization, mixed valence, superconductivity and possibly topological characteristics. The theoretical prediction of topological properties in SmB$_{6}$ and YbB$_{6}$, has rekindled the scientific interest in the rare earth hexaborides, and high-resolution ARPES…
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Strong electron correlations in rare earth hexaborides can give rise to a variety of interesting phenomena like ferromagnetism, Kondo hybridization, mixed valence, superconductivity and possibly topological characteristics. The theoretical prediction of topological properties in SmB$_{6}$ and YbB$_{6}$, has rekindled the scientific interest in the rare earth hexaborides, and high-resolution ARPES has been playing a major role in the debate. The electronic band structure of the hexaborides contains the key to understand the origin of the different phenomena observed, and much can be learned by comparing the experimental data from different rare earth hexaborides. We have performed high-resolution ARPES on the (001) surfaces of YbB$_{6}$, CeB$_{6}$ and SmB$_{6}$. On the most basic level, the data show that the differences in the valence of the rare earth element are reflected in the experimental electronic band structure primarily as a rigid shift of the energy position of the metal 5$\textit{d}$ states with respect to the Fermi level. Although the overall shape of the $\textit{d}$-derived Fermi surface contours remains the same, we report differences in the dimensionality of these states between the compounds studied. Moreover, the spectroscopic fingerprint of the 4$\textit{f}$ states also reveals considerable differences that are related to their coherence and the strength of the $\textit{d}$-$\textit{f}$ hybridization. For the SmB$_6$ case, we use ARPES in combination with STM imaging and electron diffraction to reveal time dependent changes in the structural symmetry of the highly debated SmB$_{6}$(001) surface. All in all, our study highlights the suitability of electron spectroscopies like high-resolution ARPES to provide links between electronic structure and function in complex and correlated materials such as the rare earth hexaborides.
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Submitted 16 May, 2016; v1 submitted 19 June, 2015;
originally announced June 2015.
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Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators
Authors:
Emmanouil Frantzeskakis,
Nick de Jong,
Berend Zwartsenberg,
Tran V. Bay,
Ying Kai Huang,
Shyama V. Ramankutty,
Alona Tytarenko,
Dong Wu,
Yu Pan,
Shira Hollanders,
Milan Radovic,
Nicholas C. Plumb,
Nan Xu,
Ming Shi,
Cosmin Lupulescu,
Tiberiu Arion,
Ruslan Ovsyannikov,
Andrei Varykhalov,
Wolfgang Eberhardt,
Anne de Visser,
Erik van Heumen,
Mark S. Golden
Abstract:
Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both appr…
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Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both approaches are seen to lead to electronic band structure changes. Such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases.The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of illumination a topological insulator surface has been exposed to under typical experimental ARPES conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.
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Submitted 17 April, 2015;
originally announced April 2015.
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Micro-metric electronic patterning of a topological band structure using a photon beam
Authors:
Emmanouil Frantzeskakis,
Nick de Jong,
Berend Zwartsenberg,
Yingkai Huang,
Tran V. Bay,
Pieter Pronk,
Erik van Heumen,
Dong Wu,
Yu Pan,
Milan Radovic,
Nicholas C. Plumb,
Nan Xu,
Ming Shi,
Anne de Visser,
Mark S. Golden
Abstract:
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulati…
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In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied states originating from the bulk conduction band. This is due to adsorbate-induced downward band-bending, a phenomenon known from other Bi-based 3D TIs. Here we show, using angle-resolved photoemission, how an EUV light beam of moderate flux can be used to exclude these topologically trivial states from the Fermi level of Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$ single crystals, thereby re-establishing the purely topological character of the low lying electronic states of the system. We furthermore prove that this process is highly local in nature in this bulk-insulating TI, and are thus able to imprint structures in the spatial energy landscape at the surface. We illustrate this by `writing' micron-sized letters in the Dirac point energy of the system.
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Submitted 27 November, 2015; v1 submitted 2 December, 2014;
originally announced December 2014.
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Low carrier concentration crystals of the topological insulator Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$: a magnetotransport study
Authors:
Y. Pan,
D. Wu,
J. R. Angevaare,
H. Luigjes,
E. Frantzeskakis,
N. de Jong,
E. van Heumen,
T. V. Bay,
B. Zwartsenberg,
Y. K. Huang,
M. Snelder,
A. Brinkman,
M. S. Golden,
A. de Visser
Abstract:
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthe…
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In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)$_{2}$(Te,Se)$_{3}$ (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized Bi$_{2-x}$Sb${_x}$Te$_{3-y}$Se$_{y}$ single crystals with compositions around $x = 0.5$ and $y = 1.3$. Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition Bi$_{1.46}$Sb$_{0.54}$Te$_{1.7}$Se$_{1.3}$. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to $1 μ$m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with $α\simeq -1$ as expected for transport dominated by topological surface states.
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Submitted 7 May, 2015; v1 submitted 10 November, 2014;
originally announced November 2014.
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Angular variation of the magnetoresistance of the superconducting ferromagnet UCoGe
Authors:
T. V. Bay,
A. M. Nikitin,
T. Naka,
A. McCollam,
Y. K. Huang,
A. de Visser
Abstract:
We report a magnetoresistance study of the superconducting ferromagnet UCoGe. The data, taken on single-crystalline samples, show a pronounced structure at $B^* = 8.5$~T for a field applied along the ordered moment $m_0$. Angle dependent measurements reveal this field-induced phenomenon has an uniaxial anisotropy. Magnetoresistance measurements under pressure show a rapid increase of $B^*$ to 12.8…
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We report a magnetoresistance study of the superconducting ferromagnet UCoGe. The data, taken on single-crystalline samples, show a pronounced structure at $B^* = 8.5$~T for a field applied along the ordered moment $m_0$. Angle dependent measurements reveal this field-induced phenomenon has an uniaxial anisotropy. Magnetoresistance measurements under pressure show a rapid increase of $B^*$ to 12.8~T at 1.0~GPa. We discuss $B^*$ in terms of a field induced polarization change. Upper critical field measurements corroborate the unusual S-shaped $B_{c2}(T)$-curve for a field along the $b$-axis of the orthorhombic unit cell.
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Submitted 10 June, 2014;
originally announced June 2014.
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Low field magnetic response of the non-centrosymmetric superconductor YPtBi
Authors:
T. V. Bay,
M. Jackson,
C. Paulsen,
C. Baines,
A. Amato,
T. Orvis,
M. C. Aronson,
Y. K. Huang,
A. de Visser
Abstract:
The low-field magnetic response of the non-centrosymmetric superconductor YPtBi ($T_c =0.77$ K) is investigated. Ac-susceptibility and dc-magnetization measurements provide solid evidence for bulk superconductivity with a volume fraction of $\sim 70\%$. The lower critical field is surprisingly small: $B_{c1} = 0.008$ mT $(T \rightarrow 0)$. Muon spin rotation experiments in a transverse magnetic f…
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The low-field magnetic response of the non-centrosymmetric superconductor YPtBi ($T_c =0.77$ K) is investigated. Ac-susceptibility and dc-magnetization measurements provide solid evidence for bulk superconductivity with a volume fraction of $\sim 70\%$. The lower critical field is surprisingly small: $B_{c1} = 0.008$ mT $(T \rightarrow 0)$. Muon spin rotation experiments in a transverse magnetic field of 0.01 T show a weak increase of the Gaussian damping rate $σ_{TF}$ below $T_c$, which yields a London penetration depth $λ= 1.6 \pm 0.2~ μ$m. The zero-field Kubo-Toyabe relaxation rate $σ_{KT}$ equals $0.129 \pm 0.004~μ$s$^{-1}$ and does not show a significant change below $T_c$. This puts an upper bound of 0.04 mT on the spontaneous magnetic field associated with a possible odd-parity component in the superconducting order parameter.
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Submitted 11 December, 2013;
originally announced December 2013.
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Superconductivity and magnetic order in the non-centrosymmetric Half Heusler compound ErPdBi
Authors:
Y. Pan,
A. M. Nikitin,
T. V. Bay,
Y. K. Huang,
C. Paulsen,
B. H. Yan,
A. de Visser
Abstract:
We report superconductivity at $T_c = 1.22$ K and magnetic order at $T_N = 1.06$ K in the semi-metallic noncentrosymmetric Half Heusler compound ErPdBi. The upper critical field, $B_{c2}$, has an unusual quasi-linear temperature variation and reaches a value of 1.6 T for $T \rightarrow 0$. Magnetic order is found below $T_c$ and is suppressed at $B{_M} \sim 2.5$ T for $T \rightarrow 0$. Since…
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We report superconductivity at $T_c = 1.22$ K and magnetic order at $T_N = 1.06$ K in the semi-metallic noncentrosymmetric Half Heusler compound ErPdBi. The upper critical field, $B_{c2}$, has an unusual quasi-linear temperature variation and reaches a value of 1.6 T for $T \rightarrow 0$. Magnetic order is found below $T_c$ and is suppressed at $B{_M} \sim 2.5$ T for $T \rightarrow 0$. Since $T_c \simeq T_N$, the interaction of superconductivity and magnetism is expected to give rise to a complex ground state. Moreover, electronic structure calculations show ErPdBi has a topologically nontrivial band inversion and thus may serve as a new platform to study the interplay of topological states, superconductivity and magnetic order.
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Submitted 17 October, 2013;
originally announced October 2013.
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Superconductivity in non-centrosymmetric YPtBi under pressure
Authors:
T. V. Bay,
T. Naka,
Y. K. Huang,
A. de Visser
Abstract:
We report a high-pressure single-crystal study of the non-centrosymmetric superconductor YPtBi ($T_c = 0.77$ K). Magnetotransport measurements show a weak metallic behavior with a carrier concentration $n \simeq 2.2 \times 10^{19}$ cm$^{-3}$. Resistivity measurements up to $p = 2.51$ GPa reveal superconductivity is promoted by pressure. The reduced upper critical field $B_{c2}(T)$ curves collapse…
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We report a high-pressure single-crystal study of the non-centrosymmetric superconductor YPtBi ($T_c = 0.77$ K). Magnetotransport measurements show a weak metallic behavior with a carrier concentration $n \simeq 2.2 \times 10^{19}$ cm$^{-3}$. Resistivity measurements up to $p = 2.51$ GPa reveal superconductivity is promoted by pressure. The reduced upper critical field $B_{c2}(T)$ curves collapse onto a single curve, with values that exceed the model values for spin-singlet superconductivity. The $B_{c2}$ data point to an odd-parity component in the superconducting order parameter, in accordance with predictions for non-centrosymmetric superconductors.
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Submitted 17 June, 2012;
originally announced June 2012.
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Superconductivity in the doped topological insulator Cu$_x$Bi$_2$Se$_3$ under high pressure
Authors:
T. V. Bay,
T. Naka,
Y. K. Huang,
H. Luigjes,
M. S. Golden,
A. de Visser
Abstract:
We report a high-pressure single crystal study of the topological superconductor Cu$_x$Bi$_2$Se$_3$. Resistivity measurements under pressure show superconductivity is depressed smoothly. At the same time the metallic behavior is gradually lost. The upper critical field data $B_{c2}(T)$ under pressure collapse onto a universal curve. The absence of Pauli limiting and the comparison of $B_{c2}(T)$ t…
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We report a high-pressure single crystal study of the topological superconductor Cu$_x$Bi$_2$Se$_3$. Resistivity measurements under pressure show superconductivity is depressed smoothly. At the same time the metallic behavior is gradually lost. The upper critical field data $B_{c2}(T)$ under pressure collapse onto a universal curve. The absence of Pauli limiting and the comparison of $B_{c2}(T)$ to a polar state function point to spin-triplet superconductivity, but an anisotropic spin-singlet state cannot be discarded completely.
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Submitted 1 December, 2011;
originally announced December 2011.
