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Few-layer antimonene electrical properties
Authors:
Pablo Ares,
Sahar Pakdel,
Irene Palacio,
Wendel S. Paz,
Maedeh Rassekh,
David Rodriguez-San Miguel,
Lucia Aballe,
Michael Foerster,
Nerea Ruiz del Arbol,
Jose Angel Martin-Gago,
Felix Zamora,
Julio Gomez-Herrero,
Juan Jose Palacios
Abstract:
Antimonene -- a single layer of antimony atoms -- and its few layer forms are among the latest additions to the 2D mono-elemental materials family. Numerous predictions and experimental evidence of its remarkable properties including (opto)electronic, energetic or biomedical, among others, together with its robustness under ambient conditions, have attracted the attention of the scientific communi…
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Antimonene -- a single layer of antimony atoms -- and its few layer forms are among the latest additions to the 2D mono-elemental materials family. Numerous predictions and experimental evidence of its remarkable properties including (opto)electronic, energetic or biomedical, among others, together with its robustness under ambient conditions, have attracted the attention of the scientific community. However, experimental evidence of its electrical properties is still lacking. Here, we characterized the electronic properties of mechanically exfoliated flakes of few-layer (FL) antimonene of different thicknesses (~ 2-40 nm) through photoemission electron microscopy, kelvin probe force microscopy and transport measurements, which allows us to estimate a sheet resistance of ~ 1200 $Ω$sq$^{-1}$ and a mobility of ~ 150 cm$^2$V$^{-1}$s$^{-1}$ in ambient conditions, independent of the flake thickness. Alternatively, our theoretical calculations indicate that topologically protected surface states (TPSS) should play a key role in the electronic properties of FL antimonene, which supports our experimental findings. We anticipate our work will trigger further experimental studies on TPSS in FL antimonene thanks to its simple structure and significant stability in ambient environments.
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Submitted 23 July, 2021;
originally announced July 2021.
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Consistency between ARPES and STM measurements on SmB$_6$
Authors:
Christian E. Matt,
Harris Pirie,
Anjan Soumyanarayanan,
Michael M. Yee,
Yang He,
Daniel T. Larson,
Wendel S. Paz,
J. J. Palacios,
M. H. Hamidian,
Jennifer E. Hoffman
Abstract:
Strongly correlated topological surface states are promising platforms for next-generation quantum applications, but they remain elusive in real materials. The correlated Kondo insulator SmB$_6$ is one of the most promising candidates, with theoretically predicted heavy Dirac surface states supported by transport and scanning tunneling microscopy (STM) experiments. However, a puzzling discrepancy…
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Strongly correlated topological surface states are promising platforms for next-generation quantum applications, but they remain elusive in real materials. The correlated Kondo insulator SmB$_6$ is one of the most promising candidates, with theoretically predicted heavy Dirac surface states supported by transport and scanning tunneling microscopy (STM) experiments. However, a puzzling discrepancy appears between STM and angle-resolved photoemission (ARPES) experiments on SmB$_6$. Although ARPES detects spin-textured surface states, their velocity is an order of magnitude higher than expected, while the Dirac point -- the hallmark of any topological system -- can only be inferred deep within the bulk valence band. A significant challenge is that SmB$_6$ lacks a natural cleavage plane, resulting in ordered surface domains limited to 10s of nanometers. Here we use STM to show that surface band bending can shift energy features by 10s of meV between domains. Starting from our STM spectra, we simulate the full spectral function as an average over multiple domains with different surface potentials. Our simulation shows excellent agreement with ARPES data, and thus resolves the apparent discrepancy between large-area measurements that average over multiple band-shifted domains and atomically-resolved measurements within a single domain.
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Submitted 16 May, 2020; v1 submitted 31 October, 2018;
originally announced October 2018.
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Observation of a well-defined hybridization gap and in-gap states on the SmB6 (001) surface
Authors:
Zhixiang Sun,
Ana Maldonado,
Wendel S. Paz,
Dmytro S. Inosov,
Andreas P. Schnyder,
J. J. Palacios,
Natalya Yu. Shitsevalova,
Vladimir B. Filipov,
Peter Wahl
Abstract:
The rise of topology in condensed matter physics has generated strong interest in identifying novel quantum materials in which topological protection is driven by electronic correlations. Samarium hexaboride is a Kondo insulator for which it has been proposed that a band inversion between $5d$ and $4f$ bands gives rise to topologically protected surface states. However, unambiguous proof of the ex…
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The rise of topology in condensed matter physics has generated strong interest in identifying novel quantum materials in which topological protection is driven by electronic correlations. Samarium hexaboride is a Kondo insulator for which it has been proposed that a band inversion between $5d$ and $4f$ bands gives rise to topologically protected surface states. However, unambiguous proof of the existence and topological nature of these surface states is still missing, and its low-energy electronic structure is still not fully established. Here we present a study of samarium hexaboride by ultra-low-temperature scanning tunneling microscopy and spectroscopy. We obtain clear atomically resolved topographic images of the sample surface. Our tunneling spectra reveal signatures of a hybridization gap with a size of about $8\ \mathrm{meV}$ and with a reduction of the differential conductance inside the gap by almost half, and surprisingly, several strong resonances below the Fermi level. The spatial variations of the energy of the resonances point towards a microscopic variation of the electronic states by the different surface terminations. High-resolution tunneling spectra acquired at $100\ \mathrm{mK}$ reveal a splitting of the Kondo resonance, possibly due to the crystal electric field.
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Submitted 7 June, 2018; v1 submitted 23 March, 2018;
originally announced March 2018.
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High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors
Authors:
Aday J. Molina-Mendoza,
Joshua O. Island,
Wendel S. Paz,
Jose Manuel Clamagirand,
Jose Ramón Ares,
Eduardo Flores,
Fabrice Leardini,
Carlos Sánchez,
Nicolás Agraït,
Gabino Rubio-Bollinger,
Herre S. J. van der Zant,
Isabel J. Ferrer,
J. J. Palacios,
Andres Castellanos-Gomez
Abstract:
The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titani…
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The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, we perform a thermogravimetric analysis of bulk TiS3 and compare the results with density functional theory (DFT) and Kinetic Monte Carlo calculations. We conclude that oxidation of TiS3 and subsequent desorption of sulfur atoms plays an important role in the electrical breakdown of the material in ambient conditions. Our results show that TiS3 is an attractive material for high power applications and lend insight to the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.
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Submitted 18 April, 2017;
originally announced April 2017.
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Franckeite: a naturally occurring van der Waals heterostructure
Authors:
Aday J. Molina-Mendoza,
Emerson Giovanelli,
Wendel S. Paz,
Miguel Angel Niño,
Joshua O. Island,
Charalambos Evangeli,
Lucía Aballe,
Michael Foerster,
Herre S. J. van der Zant,
Gabino Rubio-Bollinger,
Nicolás Agraït,
J. J. Palacios,
Emilio M. Pérez,
Andres Castellanos-Gomez
Abstract:
The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from…
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The fabrication of van der Waals heterostructures, artificial materials assembled by individually stacking atomically thin (2D) materials, is one of the most promising directions in 2D materials research. Until now, the most widespread approach to stack 2D layers relies on deterministic placement methods which are cumbersome when fabricating multilayered stacks. Moreover, they tend to suffer from poor control over the lattice orientations and the presence of unwanted adsorbates between the stacked layers. Here, we present a different approach to fabricate ultrathin heterostructures by exfoliation of bulk franckeite which is a naturally occurring and air stable van der Waals heterostructure (composed of alternating SnS2-like and PbS-like layers stacked on top of each other). Presenting both an attractive narrow bandgap (<0.7 eV) and p-type doping, we find that the material can be exfoliated both mechanically and chemically down to few-layer thicknesses. We present extensive theoretical and experimental characterizations of the material's electronic properties and crystal structure, and explore applications for near-infrared photodetectors (exploiting its narrow bandgap) and for p-n junctions based on the stacking of MoS2 (n-doped) and franckeite (p-doped)
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Submitted 21 June, 2016;
originally announced June 2016.
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Interaction between single vacancies in graphene sheet: An ab initio calculation
Authors:
Wanderla L. Scopel,
Wendel S. Paz,
Jair C. C. Freitas
Abstract:
In order to investigate the interaction between single vacancies in a graphene sheet, we have used spin-polarized density functional theory (DFT). Two distinct configurations were considered, either with the two vacancies located in the same sublattice or in different sublattices, and the effect of changing the separation between the vacancies was also studied. Our results show that the ground sta…
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In order to investigate the interaction between single vacancies in a graphene sheet, we have used spin-polarized density functional theory (DFT). Two distinct configurations were considered, either with the two vacancies located in the same sublattice or in different sublattices, and the effect of changing the separation between the vacancies was also studied. Our results show that the ground state of the system is indeed magnetic, but the presence of the vacancies in the same sublattice or in different sublattices and the possible topological configurations can lead to different contributions from the $π$ and $σ$ orbitals to magnetism. On the other hand, our findings reveal that the net magnetic moment of the system with the two vacancies in the same sublattice move towards the value of the magnetic moment per isolated vacancy with the increase of the distance between the vacancies, which is ascribed to the different contributions due to $π$ electrons. Moreover, it is also found that the local magnetic moments for vacancies in the same sublattice are in parallel configuration, while they have different orientations when the vacancies are created in different sublattices. So, our findings have clearly evidenced how difficult it would be to observe experimentally the emergence of magnetic order in graphene-based systems containing randomly created atomic vacancies, since the energy difference between cases of antiferromagnetic and ferromagnetic order decreases quickly with the increase in the distance separating each vacancy pair.
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Submitted 14 October, 2015;
originally announced October 2015.
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Hyperfine magnetic field in ferromagnetic graphite
Authors:
Jair C. C. Freitas,
Wanderlã L. Scopel,
Wendel S. Paz,
Leandro V. Bernardes,
Francisco E. Cunha-Filho,
Carlos Speglich,
Fernando M. Araújo-Moreira,
Damjan Pelc,
Tonči Cvitanić,
Miroslav Požek
Abstract:
Information on atomic-scale features is required for a better understanding of the mechanisms leading to magnetism in non-metallic, carbon-based materials. This work reports a direct evaluation of the hyperfine magnetic field produced at 13C nuclei in ferromagnetic graphite by nuclear magnetic resonance (NMR). The experimental investigation was made possible by the results of first-principles calc…
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Information on atomic-scale features is required for a better understanding of the mechanisms leading to magnetism in non-metallic, carbon-based materials. This work reports a direct evaluation of the hyperfine magnetic field produced at 13C nuclei in ferromagnetic graphite by nuclear magnetic resonance (NMR). The experimental investigation was made possible by the results of first-principles calculations carried out in model systems, including graphene sheets with atomic vacancies and graphite nanoribbons with edge sites partially passivated by oxygen. A similar range of maximum hyperfine magnetic field values (18-21T) was found for all systems, setting the frequency span to be investigated in the NMR experiments; accordingly, a significant 13C NMR signal was detected close to this range without any external applied magnetic field in ferromagnetic graphite.
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Submitted 4 June, 2014;
originally announced June 2014.
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On the connection between structural distortion and magnetism in graphene with a single vacancy
Authors:
Wendel S. Paz,
Wanderlã L. Scopel,
Jair C. C. Freitas
Abstract:
The correlation between structural distortion and emergence of magnetism in graphene containing a single vacancy was investigated using first-principles calculations based on density functional theory (DFT). Our results have shown that a local distortion is formed around the vacancy, with reconstruction of two atomic bonds and with a dangling bond remaining at the third atom adjacent to the vacanc…
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The correlation between structural distortion and emergence of magnetism in graphene containing a single vacancy was investigated using first-principles calculations based on density functional theory (DFT). Our results have shown that a local distortion is formed around the vacancy, with reconstruction of two atomic bonds and with a dangling bond remaining at the third atom adjacent to the vacancy. A systematic investigation of the possible out-of-plane displacement of this third atom was then carried out, in order to ascertain its effects on the magnetic features of the system. The ground state was definitely found to be magnetic and planar, with spin-resolved $σ$ and $π$ bands contributing to the total magnetic moment. However, we have also found that metastable solutions can be achieved if an initial shift of the third atom above a minimum threshold from the graphene plane is provided, which leads to a non-planar geometry and a non-magnetic state.
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Submitted 12 November, 2012;
originally announced November 2012.
