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Bridging Borophene and Metal Surfaces: Structural, Electronic, and Electron Transport Properties
Authors:
Wanderlã L. Scopel,
F. Crasto de Lima,
Pedro H. Souza,
José E. Padilha,
Roberto H. Miwa
Abstract:
Currently, solid interfaces composed of two-dimensional materials (2D) in contact with metal surfaces (m-surf) have been the subject of intense research, where the borophene bilayer (BBL) has been considered a prominent material for the development of electronic devices based on 2D platforms. In this work, we present a theoretical study of the energetic, structural, and electronic properties of th…
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Currently, solid interfaces composed of two-dimensional materials (2D) in contact with metal surfaces (m-surf) have been the subject of intense research, where the borophene bilayer (BBL) has been considered a prominent material for the development of electronic devices based on 2D platforms. In this work, we present a theoretical study of the energetic, structural, and electronic properties of the BBL/m-surf interface, with m-surf = Ag, Au, and Al (111) surfaces, and the electronic transport properties of BBL channels connected to the BBL/m-surf top contacts. We find that the bottom-most BBL layer becomes metalized, due to the orbital hybridization with the metal surface states, resulting in BBL/m-surf ohmic contacts, meanwhile, the inner and top-most boron layers kept their semiconducting character. The net charge transfers reveal that BBL has become $n$-type ($p$-type) doped for m-surf = Ag, and Al (= Au). A thorough structural characterization of the BBL/m-surf interface, using a series of simulations of the X-ray photoelectron spectra, shows that the formation of BBL/m-surf interface is characterized by a redshift of the B-$1s$ spectra. Further electronic transport results revealed the emergence of a Schottky barrier between 0.1 and 0.2\,eV between the BBL/m-surf contact and the BBL channels. We believe that our findings are timely, bringing important contributions to the applicability of borophene bilayers for developing 2D electronic devices.
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Submitted 10 May, 2023;
originally announced May 2023.
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Magnetic and Electronic Switch in Metal Intercalated Two-Dimensional GeP$_3$
Authors:
D. P. de A. Deus,
I. S. S. de Oliveira,
J. B. Oliveira,
W. L. Scopel,
R. H. Miwa
Abstract:
Intercalation of foreign atoms in two dimensional hosts has been considered a quite promising route in order to engineer the electronic, and magnetic properties in 2D plataforms. In the present study, we performed a first-principles theoretical investigation of the energetic stability, and the magnetic/electronic properties of 2D GeP$_3$ doped by Cr atoms. Our total energy results reveal the forma…
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Intercalation of foreign atoms in two dimensional hosts has been considered a quite promising route in order to engineer the electronic, and magnetic properties in 2D plataforms. In the present study, we performed a first-principles theoretical investigation of the energetic stability, and the magnetic/electronic properties of 2D GeP$_3$ doped by Cr atoms. Our total energy results reveal the formation of thermodynamically stable Cr doped GeP$_3$ bilayer [(GeP$_3$)$_{BL}$], characterized by interstitial Cr atoms lying in the van der Waals (vdW) gap between (GeP$_3$)$_{BL}$ [(GeP$_3$)$_{BL}^{Cr}$]. We show that the ground state row-wise antiferromagnetic (RW-AFM) phase of (GeP$_3$)$_{BL}^{Cr}$ can be tuned to a ferromagnetic (FM) configuration upon compressive mechanical strain ($\varepsilon$), Cr$^{\uparrow \downarrow} \xrightarrow{\varepsilon}$Cr$^{\uparrow \uparrow}$. By considering its stacked counterparts, (GeP$_3$)$_{BL}^{Cr}$/(GeP$_3$)$_{BL}^{Cr}$, and (GeP$_3$)$_{BL}^{Cr}$/Cr/(GeP$_3$)$_{BL}^{Cr}$, we found that such a magnetic tuning is dictated by a combination of intralayer and interlayer couplings, where the RW-AFM phase change to layer-by-layer FM (Cr$^{\uparrow \uparrow}$//Cr$^{\uparrow \uparrow}$) and AFM (Cr$^{\uparrow \uparrow}$/Cr$^{\downarrow \downarrow}$/Cr$^{\uparrow \uparrow}$) phases, respectively. Further electronic band structure calculations show that these Cr doped systems are metallic, characterized by the emergence of strain induced spin polarized channels at the Fermi level. These findings reveal that the atomic intercalation, indeed, offers a new set of degree of freedom for the design and control the magnetic/electronic properties in 2D systems.
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Submitted 7 October, 2020;
originally announced October 2020.
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Black phosphorene tune electronic properties via directional C-doped
Authors:
Renan N. Pedrosa,
Wanderlã L. Scopel,
Rodrigo G. Amorim
Abstract:
The tuning black phosphorene properties such as structural, electronic, transport are explored via substitutional C-doped. We employed density functional theory (DFT) calculations in combination with non-equilibrium Green's function (NEGF) for modeling the systems. Our results revealed that substitutional C-doped phosphorene are energetically favorable, and ruled by exothermic process. We also fou…
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The tuning black phosphorene properties such as structural, electronic, transport are explored via substitutional C-doped. We employed density functional theory (DFT) calculations in combination with non-equilibrium Green's function (NEGF) for modeling the systems. Our results revealed that substitutional C-doped phosphorene are energetically favorable, and ruled by exothermic process. We also found that C-doping induces a change of the electric properties, such as a semiconductor-to-metal transition for the most lower concentration and zig-zag C-wire. Moreover, for an armchair C-wire and the most higher concentration the semiconductor character is kept, meanwhile the direct-to-indirect transition is observed to band gap nature. Finally, we show that there exist a dependence of the electronic transport with directional character of the C-doped configuration, and the possibility to control the local electric current probability through the applied gate voltage. The C-doped phosphorene findings demonstrated that, the direction play the role for conductance on 2D platform.
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Submitted 28 November, 2019;
originally announced November 2019.
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Electronic Stripes and Transport Properties in Borophene Heterostructures
Authors:
G. H. Silvestre,
R. H. Miwa,
Wanderlã L. Scopel
Abstract:
We performed a theoretical investigation of the structural and electronic properties of (i) pristine, and (ii) superlattice structures of borophene. In (i), by combining first-principles calculations, based on the density functional theory (DFT), and simulations of the X-ray Absorption Near-Edge Structure (XANES) we present a comprehensive picture connecting the atomic arrangement of borophene and…
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We performed a theoretical investigation of the structural and electronic properties of (i) pristine, and (ii) superlattice structures of borophene. In (i), by combining first-principles calculations, based on the density functional theory (DFT), and simulations of the X-ray Absorption Near-Edge Structure (XANES) we present a comprehensive picture connecting the atomic arrangement of borophene and the X-ray absorption spectra. Once we have characterized the electronic properties of the pristine systems, we next examined the electronic confinement effects in 2D borophene superlattices (BSLs) [(ii)]. Here, the BSL structures were made by attaching laterally two different structural phases of borophene. The energetic stability, and the electronic properties of those BSLs were examined based on total energy DFT calculations. We find a highly anisotropic electronic structure, characterized by the electronic confinement effects, and the formation of metallic channels along the superlattices. Combining DFT and the Landauer-Büttiker formalism, we investigate the electronic transport properties in the BSLs. Our results of the transmission probability reveal that the electronic transport is ruled by π or a combination of π and σ transmission channels, depending on the atomic arrangement and periodicity of the superlattices. Finally we show that there is huge magnification on the directional dependence of the electronic transport properties in BSLs, in comparision with the pristine borophene phase. Those findings indicate that BSLs are quite interesting systems in order to design conductive nanoribbons in a 2D platform.
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Submitted 13 November, 2019; v1 submitted 12 July, 2019;
originally announced July 2019.
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Topological Line Defects around Graphene Nanopores for DNA Sequencing
Authors:
Jariyanee Prasongkit,
Ernane F. Martins,
Fábio A. L. de Souza,
Wanderlã L. Scopel,
Rodrigo G. Amorim,
Vittaya Amornkitbamrung,
Alexandre R. Rocha,
Ralph H. Scheicher
Abstract:
Topological line defects in graphene represent an ideal way to produce highly controlled structures with reduced dimensionality that can be used in electronic devices. In this work we propose using extended line defects in graphene to improve nucleobase selectivity in nanopore-based DNA sequencing devices. We use a combination of QM/MM and non-equilibrium Green's functions methods to investigate t…
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Topological line defects in graphene represent an ideal way to produce highly controlled structures with reduced dimensionality that can be used in electronic devices. In this work we propose using extended line defects in graphene to improve nucleobase selectivity in nanopore-based DNA sequencing devices. We use a combination of QM/MM and non-equilibrium Green's functions methods to investigate the conductance modulation, fully accounting for solvent effects. By sampling over a large number of different orientations generated from molecular dynamics simulations, we theoretically demonstrate that distinguishing between the four nucleobases using line defects in a graphene-based electronic device appears possible. The changes in conductance are associated with transport across specific molecular states near the Fermi level and their coupling to the pore. Through the application of a specifically tuned gate voltage, such a device would be able to discriminate the four types of nucleobases more reliably than that of graphene sensors without topological line defects.
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Submitted 6 December, 2017;
originally announced December 2017.
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H2 O incorporation in the phosphorene/a-SiO2 interface: A first-principles study
Authors:
Wanderla L. Scopel,
Everson S. Souza,
R. H. Miwa
Abstract:
Based on first-principles calculations, we investigate the energetic stability and the electronic properties of (i) a single layer phosphorene (SLP) adsorbed on the amorphous sio2 surface (SLP/a-sio2), and (ii) the further incorporation of water molecules at the phosphorene/a-sio2 interface. In (i), we find that the phosphorene sheet bonds to a-sio2 through van der Waals interactions, even upon th…
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Based on first-principles calculations, we investigate the energetic stability and the electronic properties of (i) a single layer phosphorene (SLP) adsorbed on the amorphous sio2 surface (SLP/a-sio2), and (ii) the further incorporation of water molecules at the phosphorene/a-sio2 interface. In (i), we find that the phosphorene sheet bonds to a-sio2 through van der Waals interactions, even upon the presence of oxygen vacancy on the surface. The \slp/a-\sio\ system presents a type-I band alignment, with the valence (conduction) band maximum (minimum) of the phosphorene lying within the energy gap of the a-\sio\ substrate. The structural, and the surface-potential corrugations promote the formation of electron-rich and -poor regions on the phosphorene sheet and at the SLP/a-sio2 interface. Such charge density puddles have been strengthened by the presence of oxygen vacancies in a-sio2. In (ii), due to the amorphous structure of the surface, we have considered a number of plausible geometries of water embedded in the SLP/a-sio2 interface. There is an energetic preference to the formation of hydroxyl (OH) groups on the a-sio2 surface. Meanwhile, upon the presence of oxygenated water or interstitial oxygen in the phosphorene sheet, we find the formation of metastable OH bonded to the phosphorene, and the formation of energetically stable P--O--Si chemical bonds at the SLP/a-sio2 interface. Further x-ray absorption spectra (XAS) simulations have been done, aiming to provide additional structural/electronic informations of the oxygen atoms forming hydroxyl groups or P--O--Si chemical bonds at the interface region.
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Submitted 30 August, 2016;
originally announced August 2016.
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An ab initio investigation of Bi$_2$Se$_3$ topological insulator deposited on amorphous SiO$_2$
Authors:
I. S. S. de Oliveira,
W. L. Scopel,
R. H. Miwa
Abstract:
We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device applications. The Bi$_2$Se$_3$ films are bonded to a-SiO$_2$ mediated by van der Waals interactions. Upon interaction with the substrate, the Bi$_2$Se$_3$ topological…
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We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device applications. The Bi$_2$Se$_3$ films are bonded to a-SiO$_2$ mediated by van der Waals interactions. Upon interaction with the substrate, the Bi$_2$Se$_3$ topological surface and interface states remain present, however the degeneracy between the Dirac-like cones is broken. The energy separation between the two Dirac-like cones increases with the number of Bi$_2$Se$_3$ quintuple layers (QLs) deposited on the substrate. Such a degeneracy breaking is caused by (i) charge transfer from the TI to the substrate and charge redistribution along the Bi$_2$Se$_3$ QLs, and (ii) by deformation of the QL in contact with the a-SiO$_2$ substrate. We also investigate the role played by oxygen vacancies (V$_O$) on the a-SiO$_2$, which increases the energy splitting between the two Dirac-like cones. Finally, by mapping the electronic structure of Bi$_2$Se$_3$/a-SiO$_2$, we found that the a-SiO$_2$ surface states, even upon the presence of V$_O$, play a minor role on gating the electronic transport properties of Bi$_2$Se$_3$.
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Submitted 29 August, 2016;
originally announced August 2016.
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Interface of graphene nanopore and hexagonal boron nitride as a sensing device
Authors:
Fabio A. L. de Souza,
Wanderla L. Scopel,
Rodrigo G. Amorim,
Ralph H. Scheicher
Abstract:
The atomically-precise controlled synthesis of graphene stripes embedded in hexagonal boron nitride opens up new possibilities for the construction of nanodevices with applications in sensing. Here, we explore properties related to electronic structure and quantum transport of a graphene nanoroad embedded in hexagonal boron nitride, using a combination of density functional theory and the non-equi…
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The atomically-precise controlled synthesis of graphene stripes embedded in hexagonal boron nitride opens up new possibilities for the construction of nanodevices with applications in sensing. Here, we explore properties related to electronic structure and quantum transport of a graphene nanoroad embedded in hexagonal boron nitride, using a combination of density functional theory and the non-equilibrium Green's functions method to calculate the electric conductance. We find that the graphene nanoribbon signature is preserved in the transmission spectra and that the local current is mainly confined to the graphene domain. When a properly sized nanopore is created in the graphene part of the system, the electronic current becomes restricted to a carbon chain running along the border with hexagonal boron nitride. This circumstance could allow the hypothetical nanodevice to become highly sensitive to the electronic nature of molecules passing through the nanopore, thus opening up ways for the detection of gas molecules, amino acids, or even DNA sequences based on a measurement of the real-time conductance modulation in the graphene nanoroad.
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Submitted 24 February, 2016; v1 submitted 23 February, 2016;
originally announced February 2016.
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Interaction between single vacancies in graphene sheet: An ab initio calculation
Authors:
Wanderla L. Scopel,
Wendel S. Paz,
Jair C. C. Freitas
Abstract:
In order to investigate the interaction between single vacancies in a graphene sheet, we have used spin-polarized density functional theory (DFT). Two distinct configurations were considered, either with the two vacancies located in the same sublattice or in different sublattices, and the effect of changing the separation between the vacancies was also studied. Our results show that the ground sta…
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In order to investigate the interaction between single vacancies in a graphene sheet, we have used spin-polarized density functional theory (DFT). Two distinct configurations were considered, either with the two vacancies located in the same sublattice or in different sublattices, and the effect of changing the separation between the vacancies was also studied. Our results show that the ground state of the system is indeed magnetic, but the presence of the vacancies in the same sublattice or in different sublattices and the possible topological configurations can lead to different contributions from the $π$ and $σ$ orbitals to magnetism. On the other hand, our findings reveal that the net magnetic moment of the system with the two vacancies in the same sublattice move towards the value of the magnetic moment per isolated vacancy with the increase of the distance between the vacancies, which is ascribed to the different contributions due to $π$ electrons. Moreover, it is also found that the local magnetic moments for vacancies in the same sublattice are in parallel configuration, while they have different orientations when the vacancies are created in different sublattices. So, our findings have clearly evidenced how difficult it would be to observe experimentally the emergence of magnetic order in graphene-based systems containing randomly created atomic vacancies, since the energy difference between cases of antiferromagnetic and ferromagnetic order decreases quickly with the increase in the distance separating each vacancy pair.
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Submitted 14 October, 2015;
originally announced October 2015.
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Hyperfine magnetic field in ferromagnetic graphite
Authors:
Jair C. C. Freitas,
Wanderlã L. Scopel,
Wendel S. Paz,
Leandro V. Bernardes,
Francisco E. Cunha-Filho,
Carlos Speglich,
Fernando M. Araújo-Moreira,
Damjan Pelc,
Tonči Cvitanić,
Miroslav Požek
Abstract:
Information on atomic-scale features is required for a better understanding of the mechanisms leading to magnetism in non-metallic, carbon-based materials. This work reports a direct evaluation of the hyperfine magnetic field produced at 13C nuclei in ferromagnetic graphite by nuclear magnetic resonance (NMR). The experimental investigation was made possible by the results of first-principles calc…
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Information on atomic-scale features is required for a better understanding of the mechanisms leading to magnetism in non-metallic, carbon-based materials. This work reports a direct evaluation of the hyperfine magnetic field produced at 13C nuclei in ferromagnetic graphite by nuclear magnetic resonance (NMR). The experimental investigation was made possible by the results of first-principles calculations carried out in model systems, including graphene sheets with atomic vacancies and graphite nanoribbons with edge sites partially passivated by oxygen. A similar range of maximum hyperfine magnetic field values (18-21T) was found for all systems, setting the frequency span to be investigated in the NMR experiments; accordingly, a significant 13C NMR signal was detected close to this range without any external applied magnetic field in ferromagnetic graphite.
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Submitted 4 June, 2014;
originally announced June 2014.
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Lithium incorporation at the MoS2/graphene interface: an ab initio investigation
Authors:
Roberto H. Miwa,
Wanderla L. Scopel
Abstract:
Based on ab initio calculations, we examine the incorporation of Li atoms in the MoS2/graphene interface. We find that the intercalated Li atoms are energetically more stable than Li atoms adsorbed on the MoS2 surface. The intercalated atoms interact with both graphene sheet and MoS2 layer, increasing the Li binding energies. However, the equilibrium geometries are ruled by the MoS2 layer, where t…
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Based on ab initio calculations, we examine the incorporation of Li atoms in the MoS2/graphene interface. We find that the intercalated Li atoms are energetically more stable than Li atoms adsorbed on the MoS2 surface. The intercalated atoms interact with both graphene sheet and MoS2 layer, increasing the Li binding energies. However, the equilibrium geometries are ruled by the MoS2 layer, where the intercalated Li atoms lie on the top (Li_T) and hollow (Li_H) sites of the MoS2 layer. We calculate the Li diffusion barriers, along the Li_T -> Li_H diffusion path, where we find similar energy barriers compared with that obtained for Li adatoms on the MoS2 surface. Our results allow us to infer that the Li storage capacity increases at MoS2/G interfaces, in comparison with Li adatoms on the MoS2 surface, however, with no reduction on the mobility of the intercalated Li atoms. Those properties are interesting/useful to the development of Li batteries based on MoS2.
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Submitted 5 August, 2013;
originally announced August 2013.
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On the connection between structural distortion and magnetism in graphene with a single vacancy
Authors:
Wendel S. Paz,
Wanderlã L. Scopel,
Jair C. C. Freitas
Abstract:
The correlation between structural distortion and emergence of magnetism in graphene containing a single vacancy was investigated using first-principles calculations based on density functional theory (DFT). Our results have shown that a local distortion is formed around the vacancy, with reconstruction of two atomic bonds and with a dangling bond remaining at the third atom adjacent to the vacanc…
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The correlation between structural distortion and emergence of magnetism in graphene containing a single vacancy was investigated using first-principles calculations based on density functional theory (DFT). Our results have shown that a local distortion is formed around the vacancy, with reconstruction of two atomic bonds and with a dangling bond remaining at the third atom adjacent to the vacancy. A systematic investigation of the possible out-of-plane displacement of this third atom was then carried out, in order to ascertain its effects on the magnetic features of the system. The ground state was definitely found to be magnetic and planar, with spin-resolved $σ$ and $π$ bands contributing to the total magnetic moment. However, we have also found that metastable solutions can be achieved if an initial shift of the third atom above a minimum threshold from the graphene plane is provided, which leads to a non-planar geometry and a non-magnetic state.
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Submitted 12 November, 2012;
originally announced November 2012.
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Hf defects in HfO2/Si
Authors:
W. L. Scopel,
Antonio J. R. da Silva,
A. Fazzio
Abstract:
We investigate the possibility that Hf defects exist in the Si channel of HfO2 Si-based metal-oxide-semiconductor devices. We have studied, using ab initio Density Functional Theory calculations, substitutional and interstitial Hf impurities in c-Si, for various charge states. Our results indicate that 1) the tetrahedral interstitial defect is energetically more favorable than the substitutional…
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We investigate the possibility that Hf defects exist in the Si channel of HfO2 Si-based metal-oxide-semiconductor devices. We have studied, using ab initio Density Functional Theory calculations, substitutional and interstitial Hf impurities in c-Si, for various charge states. Our results indicate that 1) the tetrahedral interstitial defect is energetically more favorable than the substitutional, and 2) there are various stable charge states in the Si gap. The possible presence of these charged impurities in the Si channel could lead to a mobility reduction, due to coulombic scattering.
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Submitted 30 August, 2006;
originally announced August 2006.
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Comparative study of defect energetics in HfO2 and SiO2
Authors:
W. L. Scopel,
Antonio J. R. da Silva,
W. Orellana,
A. Fazzio
Abstract:
We perform ab initio calculations, based on density functional theory, of substitutional and vacancy defects in the monoclinic hafnium oxide (m-HfO2) and alpha-quartz (SiO2). The neutral oxygen vacancies and substitutional Si and Hf defects in HfO2 and SiO2, respectively, are investigated. Our calculations show that, for a large range of Hf chemical potential, Si substitutional defects are most…
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We perform ab initio calculations, based on density functional theory, of substitutional and vacancy defects in the monoclinic hafnium oxide (m-HfO2) and alpha-quartz (SiO2). The neutral oxygen vacancies and substitutional Si and Hf defects in HfO2 and SiO2, respectively, are investigated. Our calculations show that, for a large range of Hf chemical potential, Si substitutional defects are most likely to form in HfO2, leading to the formation of a silicate layer at the HfO2/Si interface. We also find that it is energetically more favorable to form oxygen vacancies in SiO2 than in HfO2, which implies that oxygen deficient HfO2 grown on top of SiO2 will consume oxygen from the SiO2.
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Submitted 30 October, 2003;
originally announced October 2003.
