Showing 1–50 of 57 results for author: Rajan, S

Active Interface Characteristics of Heterogeneously Integrated GaAsSb/Si Photodiodes

Authors: Manisha Muduli, Yongkang Xia, Seunghyun Lee, Nathan Gajowski, Chris Chae, Siddharth Rajan, Jinwoo Hwang, Shamsul Arafin, Sanjay Krishna

Abstract: There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer prin… ▽ More There is increased interest in the heterogeneous integration of various compound semiconductors with Si for a variety of electronic and photonic applications. This paper focuses on integrating GaAsSb (with absorption in the C-band at 1550nm) with silicon to fabricate photodiodes, leveraging epitaxial layer transfer (ELT) methods. Two ELT techniques, epitaxial lift-off (ELO) and macro-transfer printing (MTP), are compared for transferring GaAsSb films from InP substrates to Si, forming PIN diodes. Characterization through atomic force microscopy (AFM), and transmission electron microscopy (TEM) exhibits a high-quality, defect-free interface. Current-voltage (IV) measurements and capacitance-voltage (CV) analysis validate the quality and functionality of the heterostructures. Photocurrent measurements at room temperature and 200 K demonstrate the device's photo-response at 1550 nm, highlighting the presence of an active interface. △ Less

Submitted 26 July, 2024; v1 submitted 24 July, 2024; originally announced July 2024.

Comments: 14 pages, 5 figures, Pages 15-16 supplementary information

Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Authors: Jiarui Gong, Jie Zhou, Ashok Dheenan, Moheb Sheikhi, Fikadu Alema, Tien Khee Ng, Shubhra S. Pasayat, Qiaoqiang Gan, Andrei Osinsky, Vincent Gambin, Chirag Gupta, Siddharth Rajan, Boon S. Ooi, Zhenqiang Ma

Abstract: Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi… ▽ More Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures. △ Less

Submitted 1 December, 2023; originally announced December 2023.

Comments: 18 pages, 5 figures

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

Authors: Jie Zhou, Moheb Sheikhi, Ashok Dheenan, Haris Abbasi, Jiarui Gong, Yang Liu, Carolina Adamo, Patrick Marshall, Nathan Wriedt, Clincy Cheung, Shuoyang Qiu, Tien Khee Ng, Qiaoqiang Gan, Vincent Gambin, Boon S. Ooi, Siddharth Rajan, Zhenqiang Ma

Abstract: In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka… ▽ More In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$. △ Less

Submitted 5 October, 2023; originally announced October 2023.

Comments: 14 pages, 5 figures

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Authors: Jie Zhou, Ashok Dheenan, Jiarui Gong, Carolina Adamo, Patrick Marshall, Moheb Sheikhi, Tsung-Han Tsai, Nathan Wriedt, Clincy Cheung, Shuoyang Qiu, Tien Khee Ng, Qiaoqiang Gan, Gambin Vincent, Boon S. Ooi, Siddharth Rajan, Zhenqiang Ma

Abstract: Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr… ▽ More Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V. △ Less

Submitted 14 August, 2023; v1 submitted 12 August, 2023; originally announced August 2023.

Comments: 12 pages, 4 figures

A Mini Review on The Applications of Nanomaterials in Forensic Science

Authors: Aaromal Venugopal, Vanshika Seth, Shreya Subhash Naik, Sreya Valappil, Aman Verma, Shalini Rajan, Pranav Vilas Shetgaonkar, Akshita Sinha, Sandeep Munjal

Abstract: Herein, we report a minireview to give a brief introduction of applications of nanomaterials in the field of forensic science. The materials that have their size in nanoscale (1 - 100 nm) comes under the category of nanomaterials. Nanomaterials possess various applications in different fields like cosmetic production, medical, photoconductivity etc. because of their physio-chemical, electrical and… ▽ More Herein, we report a minireview to give a brief introduction of applications of nanomaterials in the field of forensic science. The materials that have their size in nanoscale (1 - 100 nm) comes under the category of nanomaterials. Nanomaterials possess various applications in different fields like cosmetic production, medical, photoconductivity etc. because of their physio-chemical, electrical and magnetic properties. Due to the different characteristic property that nanomaterials have, they are widely employed in diverse domains. In various fields of forensic science such as fingerprints, toxicology, medicine, serology, nanomaterials are being used extensively. Large surface area to volume ratio of the materials in nano-regime makes the nanomaterials suitable for all these application with high efficiency. This review article briefs about the nanomaterials, their advantages and their novel applications in various fields, focusing especially in the field of forensic science. The basic idea of different areas of forensic science such as development of fingerprints, detection of drugs, estimating the time since death, analysis of GSR, detection of various explosives and for the extraction of DNA etc. has also been provided. △ Less

Submitted 18 May, 2023; v1 submitted 16 May, 2023; originally announced May 2023.

Comments: 16 Pages, 3 Figures, 42 References

Anisotropic excitonic photocurrent in $β$-Ga$_{2}$O$_{3}$

Authors: Darpan Verma, Md Mohsinur Rahman Adnan, Sushovan Dhara, Chris Sturm, Siddharth Rajan, Roberto C. Myers

Abstract: Polarization dependent photocurrent spectra are measured on a (001) $β$-Ga$_{2}$O$_{3}$ Schottky photodetector, where the linear polarization of light is rotated within the ab plane. Three spectral peaks at 4.92 eV, 5.15 eV, and 5.44 eV are observed that vary in intensity with the optical polarization direction. The peak transition energies are consistent with excitons previously reported in $β$-G… ▽ More Polarization dependent photocurrent spectra are measured on a (001) $β$-Ga$_{2}$O$_{3}$ Schottky photodetector, where the linear polarization of light is rotated within the ab plane. Three spectral peaks at 4.92 eV, 5.15 eV, and 5.44 eV are observed that vary in intensity with the optical polarization direction. The peak transition energies are consistent with excitons previously reported in $β$-Ga$_{2}$O$_{3}$ due to interband transitions modified by the valence band p-orbital anisotropy and the electron-hole Coulombic attraction. The measured polarization-dependence of the photocurrent matches our predictions based on electromagnetic simulations of anisotropic absorption using the complex dielectric function tensor extracted from previous ellipsometry studies. These results illustrate the dominance of excitonic absorption and photocurrent in $β$-Ga$_{2}$O$_{3}$ both below and above the band gap, demonstrate a combined theoretical/experimental understanding of anisotropic photocarrier generation, and validate previous atomistic band structure calculations in this low-symmetry ultra-wide band gap semiconductor. △ Less

Submitted 10 March, 2023; originally announced March 2023.

Comments: 15 pages, 1 table, and 4 figure

Journal ref: Phys. Rev. Materials 7, L061601 (2023)

$β$-Ga$_2$O$_3$ Trench Schottky Diodes by Novel Low-Damage Ga-Flux Etching

Authors: Sushovan Dhara, Nidhin Kurian Kalarickal, Ashok Dheenan, Sheikh Ifatur Rahman, Chandan Joishi, Siddharth Rajan

Abstract: $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ trench Schottky barrier diodes fabricated through a Gallium atomic beam etching technique, with excellent field strength and power device figure of merit, are demonstrated. Trench formation was accomplished by a low-damage Ga flux etch that enables near-ideal forward operating characteristics that are independent of fin orientation. The reverse breakdown field strength of greater than 5.10 MV/cm is demonstrated at breakdown voltage as of 1.45 kV. This result demonstrates the potential for Ga atomic beam etching and high-quality dielectric layers for improved performance in $β$-Ga$_2$O$_3$ vertical power devices. △ Less

Submitted 8 March, 2023; originally announced March 2023.

Comments: 10 pages, 5 figures

Planar and 3-dimensional damage free etching of $β$-Ga2O3 using atomic gallium flux

Authors: Nidhin Kurian Kalarickal, Andreas Fiedler, Sushovan Dhara, Mohammad Wahidur Rahman, Taeyoung Kim, Zhanbo Xia, Zane Jamal Eddine, Ashok Dheenan, Mark Brenner, Siddharth Rajan

Abstract: In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$-Ga2O3. Etching of $β$-Ga2O3 due to excess Ga adatoms on the epilayer surface had been viewed as non-ideal for epitaxial growth especially since it results in plateauing and lowering of growth rate. In this study, we use this well-known react… ▽ More In-situ etching using Ga flux in an ultra-high vacuum environment like MBE is introduced as a method to make high aspect ratio 3 dimensional structures in $β$-Ga2O3. Etching of $β$-Ga2O3 due to excess Ga adatoms on the epilayer surface had been viewed as non-ideal for epitaxial growth especially since it results in plateauing and lowering of growth rate. In this study, we use this well-known reaction from epitaxial growth to intentionally etch $β$-Ga2O3. We demonstrate etch rate ranging from 2.9 nm/min to 30 nm/min with the highest reported etch rate being only limited by the highest Ga flux used. Patterned in-situ etching is also demonstrated and used to study the effect of fin orientation on the sidewall profiles and dopant (Si) segregation on the etched surface. Using in-situ Ga etching, we also demonstrate 150 nm wide fins and 200 nm wide nano pillars with high aspect ratio. This new etching method could enable future development of highly scaled vertical and lateral 3D devices in $β$-Ga2O3. △ Less

Submitted 26 July, 2021; v1 submitted 20 May, 2021; originally announced May 2021.

All-MOCVD-Grown Gallium Nitride Diodes with Ultra-Low Resistance Tunnel Junctions

Authors: Syed M. N. Hasan, Brendan P. Gunning, Zane J. -Eddine, Hareesh Chandrasekar, Mary H. Crawford, Andrew Armstrong, Siddharth Rajan, Shamsul Arafin

Abstract: We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction diodes with a tunnel junction (TJ)-based p-contact. The p-n diodes and TJ structures were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a… ▽ More We carefully investigate three important effects including postgrowth activation annealing, delta (δ) dose and p+-GaN layer thickness and experimentally demonstrate their influence on the electrical properties of GaN p-n homojunction diodes with a tunnel junction (TJ)-based p-contact. The p-n diodes and TJ structures were monolithically grown by metalorganic chemical vapor deposition (MOCVD) in a single growth step. By optimizing the annealing time and temperature for magnesium (Mg) activation and introducing δ-doses for both donors and acceptors at TJ interfaces, a significant improvement in electrical properties is achieved. For the continuously-grown, all-MOCVD GaN homojunction TJs, ultra-low forward voltage penalties of 158 mV and 490 mV are obtained at current densities of 20 A/cm2 and 100 A/cm2, respectively. The p-n diode with an engineered TJ shows a record-low normalized differential resistance of 1.6 x 10-4 Ω-cm2 at 5 kA/cm2. △ Less

Submitted 26 November, 2020; originally announced November 2020.

Spectral measurement of the breakdown limit of $β-Ga_{2}O_{3}$ and tunnel ionization of self-trapped excitons and holes

Authors: Md M. Adnan, Darpan Verma, Zhanbo Xia, Nidhin K. Kalarickal, Siddharth Rajan, Roberto C. Myers

Abstract: $β-Ga_{2}O_{3}… ▽ More $β-Ga_{2}O_{3}$ is an unusual semiconductor where large electric fields (~1-6 MV/cm) can be applied while still maintaining a dominant excitonic absorption peak below its ultra-wide bandgap. This provides a rare opportunity in the solid-state to examine exciton and carrier self-trapping dynamics in the strong-field limit at steady-state. Under sub-bandgap photon excitation, we observe a field-induced red-shift of the spectral photocurrent peak associated with exciton absorption and threshold-like increase in peak amplitude at high-field associated with self-trapped hole ionization. The field-dependent spectral response is quantitatively fit with an eXciton-modified Franz-Keldysh (XFK) effect model, which includes the electric-field dependent exciton binding energy due to the quadratic Stark effect. A saturation of the spectral red-shift with reverse bias is observed exactly at the onset of dielectric breakdown providing a spectral means to detect and quantify the local electric field and dielectric breakdown behavior. Additionally, the field-dependent responsivity provides insight to the photocurrent production pathway revealing the photocurrent contributions of self-trapped excitons (STXs) and self-trapped holes (STHs). Photocurrent and p-type transport in $β-Ga_{2}O_{3}$ are quantitatively explained by field-dependent tunnel ionization of excitons and self-trapped holes. We employ a quantum mechanical model of the field-dependent tunnel ionization of STX and STH to model the non-linear field-dependence of the photocurrent amplitude. Fitting to the data, we estimate an effective mass of valence band holes $(18.8 m_{0})$ and an ultrafast self-trapping time of holes (0.045 fs). This indicates that minority-hole transport in $β-Ga_{2}O_{3}$ can only arise through tunnel ionization of STH under strong fields. △ Less

Submitted 13 August, 2021; v1 submitted 31 October, 2020; originally announced November 2020.

Comments: 47 pages, 12 figures

Journal ref: Phys. Rev. Applied 16, 034011 (2021)

Electrostatic Engineering using Extreme Permittivity Materials for Ultra-wide Bandgap Semiconductor Transistors

Authors: Nidhin Kurian Kalarickal, Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, Joe F. McGlone, Wyatt Moore, Aaron R. Arehart, Steven A. Ringel, Hongping Zhao, Siddharth Rajan

Abstract: The performance of ultra-wide band gap materials like $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region… ▽ More The performance of ultra-wide band gap materials like $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics like BaTiO$_\mathrm{3}$ can provide an efficient field management strategy by improving the uniformity of electric field profile in the gate-drain region of lateral field effect transistors. Using this strategy, we were able to achieve high average breakdown fields of 1.5 MV/cm and 4 MV/cm at gate-drain spacing (L$_\mathrm{gd}$) of 6 um and 0.6 um respectively in $β$-Ga$_\mathrm{2}$O$_\mathrm{3}$, at a high channel sheet charge density of 1.8x10$^\mathrm{13}$cm$^\mathrm{-2}$. The high sheet charge density together with high breakdown field enabled a record power figure of merit (V$^\mathrm{2}$$_\mathrm{br}$/R$_\mathrm{on}$) of 376 MW/cm$^\mathrm{2}$ at a gate-drain spacing of 3 um. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Probing charge transport and background doping in MOCVD grown (010) $β$-Ga$_{2}$O$_{3}$

Authors: Zixuan Feng, A F M Anhar Uddin Bhuiyan, Zhanbo Xia, Wyatt Moore, Zhaoying Chen, Joe F. McGlone, David R. Daughton, Aaron R. Arehart, Steven A. Ringel, Siddharth Rajan, Hongping Zhao

Abstract: A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investi… ▽ More A new record-high room temperature electron Hall mobility ($μ_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for $β$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating substrate via metalorganic chemical vapor deposition (MOCVD). A peak electron mobility of $\sim 9500\space cm^{2}/V\space s$ is achieved at 45 K. Further investigation on the transport properties indicate the existence of sheet charges near the epi-layer/substrate interface. Si is identified as the primary contributor to the background carrier in both the epi-layer and the interface, originated from both surface contamination as well as growth environment. Pre-growth hydrofluoric acid cleaning of the substrate lead to an obvious decrease of Si impurity both at interface and in epi-layer. In addition, the effect of MOCVD growth condition, particularly the chamber pressure, on the Si impurity incorporation is studied. A positive correlation between the background charge concentration and the MOCVD growth pressure is confirmed. It is noteworthy that in a $β$-Ga2O3 film with very low bulk charge concentration, even a reduced sheet charge density can play an important role in the charge transport properties. △ Less

Submitted 27 April, 2020; originally announced April 2020.

Comments: 19 pages, 5 figures

Deep-recessed $β$-Ga$_2$O$_3$ delta-doped field effect transistors with in situ epitaxial passivation

Authors: Chandan Joishi, Zhanbo Xia, John S. Jamison, Shahadat H. Sohel, Roberto C. Myers, Saurabh Lodha, Siddharth Rajan

Abstract: We introduce a deep-recessed gate architecture in $β$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $β$-Ga$_2$O$_3$ layer as the passivation dielectric. To fabricate the device, the deep-recess geometry was developed using BCl$_3$ plasma based etching at ~5 W RIE to ensure minim… ▽ More We introduce a deep-recessed gate architecture in $β$-Ga$_2$O$_3$ delta-doped field effect transistors for improvement in DC-RF dispersion and breakdown properties. The device design incorporates an unintentionally doped $β$-Ga$_2$O$_3$ layer as the passivation dielectric. To fabricate the device, the deep-recess geometry was developed using BCl$_3$ plasma based etching at ~5 W RIE to ensure minimal plasma damage. Etch damage incurred with plasma etching was mitigated by annealing in vacuum at temperatures above 600 $°$C. A gate-connected field-plate edge termination was implemented for efficient field management. Negligible surface dispersion with lower knee-walkout at high V$_\mathrm{DS}$, and better breakdown characteristics compared to their unpassivated counterparts were achieved. A three terminal off-state breakdown voltage of 315 V, corresponding to an average breakdown field of 2.3 MV/cm was measured. The device breakdown was limited by the field-plate/passivation edge and presents scope for further improvement. This demonstration of epitaxially passivated field effect transistors is a significant step for $β$-Ga$_2$O$_3$ technology since the structure simultaneously provides control of surface-related dispersion and excellent field management. △ Less

Submitted 22 April, 2020; originally announced April 2020.

Local Electric Field Measurement in GaN Diodes by exciton Franz-Keldysh Photocurrent Spectroscopy

Authors: Darpan Verma, Md Mohsinur Rahman Adnan, Mohammad Wahidur Rahman, Siddharth Rajan, Roberto C. Myers

Abstract: The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the lineshape, the local bias ($V_{l}$), uniquely determining… ▽ More The eXciton Franz-Keldysh (XFK) effect is observed in GaN p-n junction diodes via the spectral variation of photocurrent responsivity data that redshift and broaden with increasing reverse bias. Photocurrent spectra are quantitatively fit over a broad photon energy range to an XFK model using only a single fit parameter that determines the lineshape, the local bias ($V_{l}$), uniquely determining the local electric field maximum and depletion widths. As expected, the spectrally determined values of $V_{l}$ vary linearly with the applied bias ($V$) and reveal a large reduction in the local electric field due to electrostatic non-uniformity. The built-in bias ($V_{bi}$) is estimated by extrapolating $V_{l}$ at $V=0$, which compared with independent C-V measurements indicates an overall $\pm$0.31 V accuracy of $V_{l}$. This demonstrates sub-bandgap photocurrent spectroscopy as a local probe of electric field in wide bandgap diodes that can be used to map out regions of device breakdown (hot spots) for improving electrostatic design of high voltage devices. △ Less

Submitted 1 April, 2020; v1 submitted 10 January, 2020; originally announced January 2020.

Comments: 27 pages, 13 figures

Zeeman Spin-Splitting in the (010) $β$-Ga2O3 Two-Dimensional Electron Gas

Authors: Adam T. Neal, Yuewei Zhang, Said Elhamri, Siddharth Rajan, Shin Mou

Abstract: Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has been studied. Analysis indicates that the spin-splitting results from the Zeeman effect. By fitting the both the first and second harmonic of the oscillations… ▽ More Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has been studied. Analysis indicates that the spin-splitting results from the Zeeman effect. By fitting the both the first and second harmonic of the oscillations as a function of magnetic field, we determine the magnitude of the Zeeman splitting to be 0.4$\hbarω_c$, with a corresponding effective g-factor of 2.7, for magnetic field perpendicular to the 2DEG. △ Less

Submitted 6 January, 2020; originally announced January 2020.

Comments: 7 pages, 5 figures

Journal ref: Appl. Phys. Lett. 115, 262103 (2019)

Metal$/BaTiO_{3}/β-Ga_{2}O_{3}$ Dielectric Heterojunction Diode with 5.7 MV/cm Breakdown Field

Authors: Zhanbo Xia, Hareesh Chandrasekar, Wyatt Moore, Caiyu Wang, Aidan Lee, Joe McGlone, Nidhin Kurian Kalarickal, Aaron Arehart, Steven Ringel, Fengyuan Yang, Siddharth Rajan

Abstract: Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and de… ▽ More Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materials where p-type doping is not available, achieving this high breakdown field in a vertical diode or transistor is very challenging. We propose and demonstrate the use of dielectric heterojunctions that use extreme permittivity materials to achieve high breakdown field in a unipolar device. We demonstrate the integration of a high permittivity material BaTiO3 with n-type $β$-Ga2O3 to enable 5.7 MV/cm average electric field and 7 MV/cm peak electric field at the device edge, while maintaining forward conduction with relatively low on-resistance and voltage loss. The proposed dielectric heterojunction could enable new design strategies to achieve theoretical device performance limits in wide and ultra-wide band gap semiconductors where bipolar doping is challenging. △ Less

Submitted 5 November, 2019; originally announced November 2019.

High electron density $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doping using ultra-thin (1 nm) spacer layer

Authors: Nidhin Kurian Kalarickal, Zhanbo Xia, Joe Mcglone, Yumo Liu, Wyatt Moore, Aaron Arehart, Steve Ringel, Siddharth Rajan

Abstract: We report on the design and demonstration of $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and heterojunction interface was investigated in $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped structures. We find that that this strategy enables higher 2DEG sheet charge densi… ▽ More We report on the design and demonstration of $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped heterostructures to achieve high sheet charge density. The use of a thin spacer layer between the Si delta-doping and heterojunction interface was investigated in $β-(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ modulation doped structures. We find that that this strategy enables higher 2DEG sheet charge density up to 6.1x10^12 cm^2 with mobility of 147 cm^2/Vs. The presence of a degenerate 2DEG channel was confirmed by the measurement of low temperature effective mobility of 378 cm^2/V-s and a lack of carrier freeze out from low temperature capacitance voltage measurements. The electron density of 6.1x10^12 cm^2 is the highest reported sheet charge density obtained without parallel conduction channels in an $(Al_{0.18}Ga_{0.82})_2O_3/Ga_2O_3$ heterostructure system. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Compositionally graded contact layers for MOCVD grown high Al-content AlGaN transistors

Authors: Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Hao Xue, Shahadat Hasan Sohel, Sanyam Bajaj, Yuewei Zhang, Wu Lu, Asif Khan, Siddharth Rajan

Abstract: In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (UWBG) Al0.70Ga0.30N channel metal semiconductor field-effect transistors (MESFETs). Increasing the thickness of the reverse graded layer was found to improve contact layer resistance significantly, leading to contact resi… ▽ More In this letter, we design and demonstrate an improved MOCVD grown reverse Al-composition graded contact layer to achieve low resistance contact to MOCVD grown ultra-wide bandgap (UWBG) Al0.70Ga0.30N channel metal semiconductor field-effect transistors (MESFETs). Increasing the thickness of the reverse graded layer was found to improve contact layer resistance significantly, leading to contact resistance of 3.3x10^-5 Ohm.cm2. Devices with gate length, LG, of 0.6 microns and source-drain spacing, LSD, of 1.5 microns displayed a maximum current density, IDSMAX, of 635 mA/mm with an applied gate voltage, VGS, of +2 V. Breakdown measurements on transistors with gate to drain spacing, LGD, of 770 nm had breakdown voltage greater than 220 , corresponding to minimum breakdown field of 2.86 MV/cm. This work provides a framework for the design of low resistance contacts to MOCVD grown high Al-content AlxGa1-xN channel transistors. △ Less

Submitted 15 September, 2019; v1 submitted 24 June, 2019; originally announced June 2019.

Journal ref: Appl. Phys. Lett. 115, 043502 (2019)

Velocity Saturation in La-doped BaSnO3 Thin Films

Authors: Hareesh Chandrasekar, Junao Cheng, Tianshi Wang, Zhanbo Xia, Nicholas G. Combs, Christopher R. Freeze, Patrick B. Marshall, Joe McGlone, Aaron Arehart, Steven Ringel, Anderson Janotti, Susanne Stemmer, Wu Lu, Siddharth Rajan

Abstract: BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range o… ▽ More BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in determining device performance. We report on the experimental measurement of electron saturation velocity in La-doped BaSnO_{3} thin films for a range of doping densities. Predicted saturation velocities based on a simple LO-phonon emission model using an effective LO phonon energy of 120 meV show good agreement with measurements of velocity saturation in La-doped BaSnO_{3} films.. Density-dependent saturation velocity in the range of 1.6x10^{7} cm/s reducing to 2x10^{6} cm/s is predicted for δ-doped BaSnO3 channels with carrier densities ranging from 10^{13} cm^{-2} to 2x10^{14} cm^{-2} respectively. These results are expected to aid the informed design of BaSnO3 as the active material for high-charge density electronic transistors. △ Less

Submitted 3 August, 2019; v1 submitted 13 May, 2019; originally announced May 2019.

Comments: 23 pages, 10 figures, 2 tables

Journal ref: Appl. Phys. Lett. 115 , 092102 (2019)

Room Temperature Intrinsic Ferromagnetism in Epitaxial Manganese Selenide Films in the Monolayer Limit

Authors: Dante J. O'Hara, Tiancong Zhu, Amanda H. Trout, Adam S. Ahmed, Yunqiu, Luo, Choong Hee Lee, Mark R. Brenner, Siddharth Rajan, Jay A. Gupta, David W. McComb, Roland K. Kawakami

Abstract: Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structu… ▽ More Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe$_2$) monolayer, while for thicker films it could originate from a combination of vdW MnSe$_2$ and/or interfacial magnetism of $α$-MnSe(111). Magnetization measurements of monolayer MnSe$_x$ films on GaSe and SnSe$_2$ epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe$_2$. Growing MnSe$_x$ films on GaSe up to high thickness (~ 40 nm) produces $α$-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSe$_x$ samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and $α$-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe$_2$ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing. △ Less

Submitted 22 February, 2018; originally announced February 2018.

Journal ref: D. J. O'Hara et al., Nano Letters 18, 3125 (2018)

High Mobility 2DEG in modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 heterostructures

Authors: Yuewei Zhang, Adam Neal, Zhanbo Xia, Chandan Joishi, Yuanhua Zheng, Sanyam Bajaj, Mark Brenner, Shin Mou, Donald Dorsey, Kelson Chabak, Gregg Jessen, Jinwoo Hwang, Joseph Heremans, Siddharth Rajan

Abstract: Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap mat… ▽ More Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field, together with the availability of low-cost native substrates, make \b{eta}-Ga2O3 a promising material compared to other conventional wide bandgap materials, such as GaN and SiC. Alloying of Al with \b{eta}-Ga2O3 could enable even larger band gap materials, and provide more flexibility for electronic and optoelectronic device design. In this work, we demonstrate a high mobility two-dimensional electron gas (2DEG) formed at the \b{eta}-(AlxGa1-x)2O3/Ga2O3 interface through modulation doping. Shubnikov-de Haas oscillation was observed for the first time in the modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure, indicating a high-quality channel formed at the heterojunction interface. The formation of the 2DEG channel was further confirmed by a weak temperature-dependence of the carrier density, and the peak low temperature mobility was found to be 2790 cm2/Vs, which is significantly higher than can be achieved in bulk-doped \b{eta}-Ga2O3. The demonstrated modulation-doped \b{eta}-(AlxGa1-x)2O3/Ga2O3 structure lays the foundation for future exploration of quantum physical phenomena as well as new semiconductor device technologies based on the \b{eta}-Ga2O3 material system. △ Less

Submitted 12 February, 2018; originally announced February 2018.

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

Authors: Sriram Krishnamoorthy, Zhanbo Xia, Chandan Joishi, Yuewei Zhang, Joe McGlone, Jared Johnson, Mark Brenner, Aaron R. Arehart, Jinwoo Hwang, Saurabh Lodha, Siddharth Rajan

Abstract: Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG… ▽ More Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices for high performance electronics. △ Less

Submitted 28 June, 2017; originally announced June 2017.

Reflective Metal/Semiconductor Tunnel Junctions for Hole Injection in AlGaN UV LEDs

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Jared M. Johnson, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Jinwoo Hwang, Siddharth Rajan

Abstract: In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable eff… ▽ More In this work, we investigate the use of nanoscale polarization engineering to achieve efficient hole injection from metals to ultra-wide band gap AlGaN, and we show that UV-reflective aluminum (Al) layers can be used for hole injection into p-AlGaN. The dependence of tunneling on the work function of the metal was investigated, and it was found that highly reflective Al metal layers can enable efficient hole injection into p-AlGaN, despite the relatively low work function of Al. Efficient tunneling hole injection was confirmed by light emission at 326 nm with on-wafer peak external quantum efficiency and wall-plug efficiency of 2.65% and 1.55%, respectively. A high power density of 83.7 W/cm2 was measured at 1200 kA/cm2. The metal/semiconductor tunnel junction structure demonstrated here could provide significant advantages for efficient and manufacturable device topologies for high power UV emitters. △ Less

Submitted 19 May, 2017; originally announced May 2017.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Sanyam Bajaj, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Siddharth Rajan

Abstract: We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact me… ▽ More We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25N/ In0.2Ga0.8N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact, and obtained a low contact resistance of Rc=4.8x10-5 Ohm cm2 on n-Al0.75Ga0.25N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2x1018 cm-3 to 1.5x1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs, and provides a novel structural design towards high power deep-UV emitters. △ Less

Submitted 28 February, 2017; originally announced March 2017.

Delta-doped Beta- Gallium Oxide Field Effect Transistor

Authors: Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj, Mark Brenner, Siddharth Rajan

Abstract: We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm^2/V… ▽ More We report silicon delta doping in Gallium Oxide (\b{eta}-Ga2O3) grown by plasma assisted molecular beam epitaxy using a shutter pulsing technique. We describe growth procedures that can be used to realize high Si incorporation in an oxidizing oxygen plasma environment. Delta doping was used to realize thin (12 nm) low-resistance layers with sheet resistance of 320 Ohm/square (mobility of 83 cm^2/Vs, integrated sheet charge of 2.4x10^14 cm^-2). A single delta-doped sheet of carriers was employed as a channel to realize a field effect transistor with current ID,MAX =292 mA/mm and transconductance gM = 27 mS/mm. △ Less

Submitted 18 February, 2017; originally announced February 2017.

Comments: 5 figures

High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector

Authors: Anamika Singh Pratiyush, Sriram Krishnamoorthy, Swanand Vishnu Solanke, Zhanbo Xia, Rangarajan Muralidharan, Siddharth Rajan, Digbijoy N. Nath

Abstract: In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a… ▽ More In this report, we demonstrate high spectral responsivity (SR) in MBE grown epitaxial \b{eta}-Ga2O3-based solar blind MSM photodetectors (PD). (-2 0 1)-oriented \b{eta}-Ga2O3 thin film was grown by plasma-assisted MBE on c-plane sapphire substrates. MSM devices fabricated with Ni/Au contacts in an interdigitated geometry were found to exhibit peak SR > 1.5 A/W at 236-240 nm at a bias of 4 V with a UV to visible rejection ratio > 105. The devices exhibited very low dark current < 10 nA at 20 V and showed no persistent photoconductivity (PPC) as evident from the sharp transients with a photo-to-dark current ratio > 103. These results represent the state-of-art performance for MBE-grown \b{eta}-Ga2O3 MSM solar blind detector. △ Less

Submitted 15 February, 2017; originally announced February 2017.

Molecular Beam Epitaxy of 2D-layered Gallium Selenide on GaN substrates

Authors: Choong Hee Lee, Sriram Krishnamoorthy, Dante J. O'Hara, Jared M. Johnson, John Jamison, Roberto C. Myers, Roland K. Kawakami, Jinwoo Hwang, Siddharth Rajan

Abstract: Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with r… ▽ More Large area epitaxy of two-dimensional (2D) layered materials with high material quality is a crucial step in realizing novel device applications based on 2D materials. In this work, we report high-quality, crystalline, large-area gallium selenide (GaSe) films grown on bulk substrates such as c-plane sapphire and gallium nitride (GaN) using a valved cracker source for Se. (002)-oriented GaSe with random in-plane orientation of domains was grown on sapphire and GaN substrates at a substrate temperature of 350-450 C with complete surface coverage and smooth surface morphology. Higher growth temperature (575 C) resulted in the formation of single-crystalline ε-GaSe triangular domains with six-fold symmetry confirmed by in-situ reflection high electron energy diffraction (RHEED) and off-axis x-ray diffraction (XRD). A two-step growth method involving high temperature nucleation of single crystalline domains and low temperature growth to enhance coalescence was adopted to obtain continuous (002)-oriented GaSe with an epitaxial relationship with the substrate. While six-fold symmetry was maintained in the two step growth, β-GaSe phase was observed in addition to the dominant ε-GaSe in cross-sectional scanning transmission electron microscopy images. This work demonstrates the potential of growing high quality 2D-layered materials using molecular beam epitaxy and can be extended to the growth of other transition metal chalcogenides. △ Less

Submitted 19 October, 2016; originally announced October 2016.

Comments: Choong Hee Lee and Sriram Krishnamoorthy have contributed equally

Design of P-Type Cladding Layers for Tunnel-Injected UVA Light Emitting Diodes

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Siddharth Rajan

Abstract: We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type dopi… ▽ More We discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that capacitance-voltage measurements can be used to estimate the compensation and doping in p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62% were achieved for tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be used to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs, and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range. △ Less

Submitted 17 August, 2016; originally announced September 2016.

Comments: 9 pages, 5 figures

Design and Demonstration of Ultra Wide Bandgap AlGaN Tunnel Junctions

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Fatih Akyol, Andrew A. Allerman, Michael W. Moseley, Andrew M. Armstrong, Siddharth Rajan

Abstract: Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction higher than 50%) materials towards highly efficient UV LEDs… ▽ More Ultra violet light emitting diodes (UV LEDs) face critical limitations in both the injection efficiency and light extraction efficiency due to the resistive and absorbing p-type contact layers. In this work, we investigate the design and application of polarization engineered tunnel junctions for ultra-wide bandgap AlGaN (Al mole fraction higher than 50%) materials towards highly efficient UV LEDs. We demonstrate that polarization-induced 3D charge is beneficial in reducing tunneling barriers especially for high composition AlGaN tunnel junctions. The design of graded tunnel junction structures could lead to low tunneling resistance below 10-3 Ohm cm2 and low voltage consumption below 1 V (at 1 kA/cm2) for high composition AlGaN tunnel junctions. Experimental demonstration of 292 nm emission was achieved through non-equilibrium hole injection into wide bandgap materials with bandgap energy larger than 4.7 eV, and detailed modeling of tunnel junctions shows that they can be engineered to have low resistance, and can enable efficient emitters in the UV-C wavelength range. △ Less

Submitted 30 August, 2016; originally announced August 2016.

Comments: 7 pages, 7 figures

AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts

Authors: Sanyam Bajaj, Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Siddharth Rajan

Abstract: We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use reverse compositional graded n++ A… ▽ More We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFET) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance of 1.9x10-6 ohm.cm2 to n-Al0.75Ga0.25N channels (bandgap ~ 5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric. △ Less

Submitted 23 August, 2016; originally announced August 2016.

High Current Density 2D/3D Esaki Tunnel Diodes

Authors: Sriram Krishnamoorthy, Edwin W. Lee II, Choong Hee Lee, Yuewei Zhang, William D. McCulloch, Jared M. Johnson, Jinwoo Hwang, Yiying Wu, Siddharth Rajan

Abstract: The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-dop… ▽ More The integration of two-dimensional materials such as transition metal dichalcogenides with bulk semiconductors offer interesting opportunities for 2D/3D heterojunction-based novel device structures without any constraints of lattice matching. By exploiting the favorable band alignment at the GaN/MoS2 heterojunction, an Esaki interband tunnel diode is demonstrated by transferring large area, Nb-doped, p-type MoS2 onto heavily n-doped GaN. A peak current density of 446 A/cm2 with repeatable room temperature negative differential resistance, peak to valley current ratio of 1.2, and minimal hysteresis was measured in the MoS2/GaN non-epitaxial tunnel diode. A high current density of 1 kA/cm2 was measured in the Zener mode (reverse bias) at -1 V bias. The GaN/MoS2 tunnel junction was also modeled by treating MoS2 as a bulk semiconductor, and the electrostatics at the 2D/3D interface was found to be crucial in explaining the experimentally observed device characteristics. △ Less

Submitted 1 June, 2016; originally announced June 2016.

Phonon lasing as a likely mechanism for density-dependent velocity saturation in GaN transistors

Authors: Jacob B. Khurgin, Sanyam Bajaj, Siddharth Rajan

Abstract: We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of the Fermi distribution in reciprocal space produces population inversion and gain for the LO phonons. Once this gain reaches a threshold value, the avalanche-li… ▽ More We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of the Fermi distribution in reciprocal space produces population inversion and gain for the LO phonons. Once this gain reaches a threshold value, the avalanche-like increase of LO emission causes a rapid loss of electron energy and momentum and leads to drift velocity saturation. Our simple model correctly predicts both the general trend of the saturation velocity decreasing with increasing electron density and the values of saturation velocity measured in our experiments. △ Less

Submitted 7 February, 2016; originally announced February 2016.

Low-resistance GaN tunnel homojunctions with 150 kA/cm^2 current and repeatable negative differential resistance

Authors: Fatih Akyol, Sriram Krishnamoorthy, Yuewei Zhang, Jared M. Johnson, Jinwoo Hwang, Siddharth Rajan

Abstract: We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Therm… ▽ More We report GaN n++/p++ interband tunnel junctions with repeatable negative differential resistance and low resistance. Reverse and forward tunneling current densities were observed to increase as Si and Mg doping concentrations were increased. Hysteresis-free, bidirectional negative differential resistance was observed at room temperature from these junctions at a forward voltage of ~1.6-2 V. Thermionic PN junctions with tunnel contact to the p-layer exhibited forward current density of 150 kA/cm^2 at 7.6 V, with a low series device resistance of 1 x 10^-5 ohm.cm^2. △ Less

Submitted 8 February, 2016; v1 submitted 17 January, 2016; originally announced January 2016.

Journal ref: Applied Physics Letters 108 (13), 131103 (2016)

Enhanced Light Extraction in Tunnel Junction Enabled Top Emitting UV LEDs

Authors: Yuewei Zhang, Andrew Allerman, Sriram Krishnamoorthy, Fatih Akyol, Michael W. Moseley, Andrew Armstrong, Siddharth Rajan

Abstract: The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling-based top-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni n… ▽ More The efficiency of ultra violet LEDs is critically limited by the absorption losses in p-type and metal layers. In this work, surface roughening based light extraction structures are combined with tunneling-based top-contacts to realize highly efficient top-side light extraction efficiency in UV LEDs. Surface roughening of the top n-type AlGaN contact layer is demonstrated using self-assembled Ni nano-clusters as etch mask. The top surface roughened LEDs were found to enhance external quantum efficiency by over 40% for UV LEDs with a peak emission wavelength of 326 nm. The method described here can enable highly efficient UV LEDs without the need for complex manufacturing methods such as flip chip bonding. △ Less

Submitted 7 December, 2015; originally announced December 2015.

Comments: 10 pages, 4 figures, submitted

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

Authors: Sanyam Bajaj, Omor F. Shoron, Pil Sung Park, Sriram Krishnamoorthy, Fatih Akyol, Ting-Hsiang Hung, Shahed Reza, Eduardo M. Chumbes, Jacob Khurgin, Siddharth Rajan

Abstract: We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-bas… ▽ More We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs. △ Less

Submitted 27 August, 2015; originally announced August 2015.

Comments: 11 pages, 7 figures

Layer-Transferred MoS2/GaN PN Diodes

Authors: Edwin W. Lee II, Choong Hee Lee, Pran K. Paul, Lu Ma, William D. McCulloch, Sriram Krishnamoorthy, Yiying Wu, Aaron Arehart, Siddharth Rajan

Abstract: Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred… ▽ More Electrical and optical characterization of two-dimensional/three-dimensional (2D/3D) p-molybdenum disulfide/n-gallium nitride (p-MoS2/n-GaN) heterojunction diodes are reported. Devices were fabricated on high-quality, large-area p-MoS2 grown by chemical vapor deposition (CVD) on hexagonal sapphire substrates. The processed devices were transferred onto GaN/sapphire substrates, and the transferred films were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). On-axis XRD spectra and surface topology obtained from AFM scans were consistent with previously grown high-quality, continuous MoS2 films. Current-voltage measurements of these diodes exhibited excellent rectification, and capacitance-voltage measurements were used to extract a conduction band offset of approximately 0.2 eV for the transferred MoS2/GaN heterojunction. This conduction band offset was confirmed by internal photoemission (IPE) measurements. The energy band lineup of the MoS2/GaN heterojunction is proposed here. This work demonstrates the potential of 2D/3D heterojunctions for novel device applications. △ Less

Submitted 19 May, 2015; originally announced May 2015.

Comments: 11 pages, 6 figures

Interband Tunneling for Hole Injection in III-Nitride Ultra-violet Emitters

Authors: Yuewei Zhang, Sriram Krishnamoorthy, Jared M. Johnson, Fatih Akyol, Andrew Allerman, Michael W. Moseley, Andrew Armstrong, Jinwoo Hwang, Siddharth Rajan

Abstract: Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light em… ▽ More Ultra-violet emitters have several applications in the areas of sensing, water purification, and data storage. While the III-Nitride semiconductor system has the band gap region necessary for ultraviolet emission, achieving efficient ultraviolet solid state emitters remains a challenge due to the low p-type conductivity and high contact resistance in wide band gap AlGaN-based ultra-violet light emitters. In this work, we show that efficient interband tunneling can be used for non-equilibrium injection of holes into ultraviolet emitters. Polarization-engineered tunnel junctions were used to enhance tunneling probability by several orders of magnitude over a PN homojunction, leading to highly efficient tunnel injection of holes to ultraviolet light emitters. This demonstration of efficient interband tunneling introduces a new paradigm for design of ultra-violet light emitting diodes and diode lasers, and enables higher efficiency and lower cost ultra-violet emitters. △ Less

Submitted 6 February, 2015; originally announced February 2015.

Comments: 13 pages, 7 figures, Submitted

Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage

Authors: Sanyam Bajaj, Ting-Hsiang Hung, Fatih Akyol, Digbijoy Nath, Siddharth Rajan

Abstract: We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed 2D simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the two-dimensional electron gas (2DEG) mobility in AlGaN channel HEMTs and evaluate… ▽ More We report on the potential of high electron mobility transistors (HEMTs) consisting of high composition AlGaN channel and barrier layers for power switching applications. Detailed 2D simulations show that threshold voltages in excess of 3 V can be achieved through the use of AlGaN channel layers. We also calculate the two-dimensional electron gas (2DEG) mobility in AlGaN channel HEMTs and evaluate their power figures of merit as a function of device operating temperature and Al mole fraction in the channel. Our models show that power switching transistors with AlGaN channels would have comparable on-resistance to GaN-channel based transistors for the same operation voltage. The modeling in this paper shows the potential of high composition AlGaN as a channel material for future high threshold enhancement mode transistors. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Comments: 12 pages, 4 figures

Epitaxial Growth of Large Area Single-Crystalline Few-Layer MoS2 with Room Temperature Mobility of 192 cm2V-1s-1

Authors: Lu Ma, Digbijoy N. Nath, Edwin W. Lee II, Choong Hee Lee, Aaron Arehart, Siddharth Rajan, Yiying Wu

Abstract: We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ~2 x 1011 cm-2 and a room temperature mobility of 192 cm2/Vs were extr… ▽ More We report on the vapor-solid growth of single crystalline few-layer MoS2 films on (0001)-oriented sapphire with excellent structural and electrical properties over centimeter length scale. High-resolution X-ray diffraction scans indicated that the films had good out-of-plane ordering and epitaxial registry. A carrier density of ~2 x 1011 cm-2 and a room temperature mobility of 192 cm2/Vs were extracted from space-charge limited transport regime in the films. The electron mobility was found to exhibit in-plane anisotropy with a ratio of ~ 1.8. Theoretical estimates of the temperature-dependent electron mobility including optical phonon, acoustic deformation potential and remote ionized impurity scattering were found to satisfactorily match the measured data. The synthesis approach reported here demonstrates the feasibility of device quality few-layer MoS2 films with excellent uniformity and high quality. △ Less

Submitted 10 May, 2014; originally announced May 2014.

InGaN/GaN Tunnel Junctions For Hole Injection in GaN Light Emitting Diodes

Authors: Sriram Krishnamoorthy, Fatih Akyol, Siddharth Rajan

Abstract: InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light… ▽ More InGaN/GaN tunnel junction contacts were grown on top of an InGaN/GaN blue (450 nm) light emitting diode wafer using plasma assisted molecular beam epitaxy. The tunnel junction contacts enable low spreading resistance n-GaN top contact layer thereby requiring less top metal contact coverage on the surface. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 x 10-2 ohm cm2 and a higher light output power are measured in tunnel junction LED. A low resistance of 5 x 10-4 ohm cm2 was measured in a MBE grown tunnel junction on GaN PN junction device, indicating that the tunnel junction LED device resistance is limited by the regrowth interface and not by the intrinsic tunneling resistance. △ Less

Submitted 16 March, 2014; originally announced March 2014.

Journal ref: Appl. Phys. Lett. 105, 141104 (2014)

Growth and Electrical Characterization of 2D Layered MoS2/SiC Heterojunctions

Authors: Edwin W. Lee II, Lu Ma, Digbijoy N. Nath, Choong Hee Lee, Yiying Wu, Siddharth Rajan

Abstract: The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2 films were found to be crystalline based on x-ray diffraction measurements. The resulting heterojunction was found to display rectification and current-voltage… ▽ More The growth and electrical characterization of a heterojunction formed between 2D layered p-MoS2 and nitrogen-doped 4H-SiC is reported. Direct growth of p-type MoS2 films on SiC was demonstrated using chemical vapor deposition, and the MoS2 films were found to be crystalline based on x-ray diffraction measurements. The resulting heterojunction was found to display rectification and current-voltage characteristics consistent with a p-n junction diode. Capacitance voltage measurements were used to determine the built-in voltage for the p-MoS2/n-SiC heterojunction p-n diode. The demonstration of heterogeneous material integration between 2D layered semiconductors and 3D SiC enables a new class of heterostructures. △ Less

Submitted 7 February, 2014; originally announced February 2014.

Comments: 9 pages, 6 figures

p-type doping in CVD grown MoS2 using Nb

Authors: M. Laskar, D. N. Nath, L. Ma, E. Lee, C. H. Lee, T. Kent, Z. Yang, Rohan Mishra, Manuel A Roldan, Juan-Carlos Idrobo, Sokrates T. Pantelides, Stephen J. Pennycook, R. Myers, Y. Wu, S. Rajan

Abstract: We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman character… ▽ More We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-doping in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides. △ Less

Submitted 24 October, 2013; originally announced October 2013.

Low frequency noise in chemical vapor deposited MoS2

Authors: Yuji Wang, Xinhang Luo, Ningjiao Zhang, Masihhur R. Laskar, Lu Ma, Yiying Wu, Siddharth Rajan, Wu Lu

Abstract: Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise… ▽ More Inherent low frequency noise is a ubiquitous phenomenon, which limits operation and performance of electronic devices and circuits. This limiting factor is very important for nanoscale electronic devices, such as 2D semiconductor devices. In this work, low frequency noise in high mobility single crystal MoS2 grown by chemical vapor deposition (CVD) is investigated. The measured low frequency noise follows an empirical formulation of mobility fluctuations with Hooge' s parameter ranging between 1.44E-3 and 3.51E-2. Small variation of Hooge's parameter suggests superior material uniformity and processing control of CVD grown MoS2 devices than reported single-layer MoS2 FET. The extracted Hooge's parameter is one order of magnitude lower than CVD grown graphene. The Hooge's parameter shows an inverse relationship with the field mobility. △ Less

Submitted 24 October, 2013; originally announced October 2013.

Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures

Authors: D. N. Nath, P. S. Park, Z. C. Yang, S. Rajan

Abstract: In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGa… ▽ More In this letter, we report on unipolar vertical transport characteristics in c-plane GaN/AlGaN/GaN heterostructures. Vertical current in heterostructures with random alloy barriers was found to be independent of dislocation density and heterostructure barrier height, and significantly higher than theoretical estimates. Percolation-based transport due to random alloy fluctuations in the ternary AlGaN is suggested as the dominant transport mechanism, and confirmed through experiments showing that non-random or digital AlGaN alloys and polarization-engineered binary GaN barriers can eliminate percolation transport and reduce leakage significantly. The understanding of vertical transport and methods for effective control proposed here will greatly impact III-nitride unipolar vertical devices. △ Less

Submitted 16 February, 2013; originally announced February 2013.

Journal ref: Appl. Phys. Lett. 103, 022102 (2013)

Large Area Single Crystal (0001) Oriented MoS2 Thin Films

Authors: Masihhur R. Laskar, Lu Ma, ShanthaKumar K, Pil Sung Park, Sriram Krishnamoorthy, Digbijoy N. Nath, Wu Lu, Yiying Wu, Siddharth Rajan

Abstract: Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single cry… ▽ More Layered metal dichalcogenide materials are a family of semiconductors with a wide range of energy band gaps and properties, and potential to open up new areas of physics and technology applications. However, obtaining high crystal quality thin films over a large area remains a challenge. Here we show that chemical vapor deposition (CVD) can be used to achieve large area electronic grade single crystal Molybdenum Disulfide (MoS2) thin films with the highest mobility reported in CVD grown films so far. Growth temperature and choice of substrate were found to critically impact the quality of film grown, and high temperature growth on (0001) orientated sapphire yielded highly oriented single crystal MoS2 films for the first time. Films grown under optimal conditions were found to be of high structural quality from high-resolution X-ray diffraction, transmission electron microscopy, and Raman measurements, approaching the quality of reference geological MoS2. Photoluminescence and electrical measurements confirmed the growth of optically active MoS2 with a low background carrier concentration, and high mobility. The CVD method reported here for the growth of high quality MoS2 thin films paves the way towards growth of a variety of layered 2D chalcogenide semiconductors and their heterostructures. △ Less

Submitted 25 February, 2013; v1 submitted 13 February, 2013; originally announced February 2013.

Ohmic Contact Formation Between Metal and AlGaN/GaN Heterostructure via Graphene Insertion

Authors: Pil Sung Park, Kongara M. Reddy, Digbijoy N. Nath, Zhichao Yang, Nitin P. Padture, Siddharth Rajan

Abstract: A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/Graphene combin… ▽ More A simple method for the creation of Ohmic contact to 2-D electron gas (2DEG) in AlGaN/GaN high electron-mobility transistors (HEMTs) using Cr/Graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300 K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/Graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This new use of graphene offers a simple and reliable method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future. △ Less

Submitted 14 February, 2013; v1 submitted 9 January, 2013; originally announced January 2013.

Low Resistance GaN/InGaN/GaN Tunnel Junctions

Authors: Sriram Krishnamoorthy, Fatih Akyol, Pil Sung Park, Siddharth Rajan

Abstract: Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions is discussed, and insertion into a PN junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are ex… ▽ More Enhanced interband tunnel injection of holes into a PN junction is demonstrated using P-GaN/InGaN/N-GaN tunnel junctions with a specific resistivity of 1.2 X 10-4 Ω cm2. The design methodology and low-temperature characteristic of these tunnel junctions is discussed, and insertion into a PN junction device is described. Applications of tunnel junctions in III-nitride optoelectronics devices are explained using energy band diagrams. The lower band gap and polarization fields reduce tunneling barrier, eliminating the need for ohmic contacts to p-type GaN. This demonstration of efficient tunnel injection of carriers in III-Nitrides can lead to a replacement of existing resistive p-type contact material in light emitters with tunneling contact layers, requiring very little metal footprint on the surface, resulting in enhanced light extraction from top emitting emitters. △ Less

Submitted 21 January, 2013; v1 submitted 20 November, 2012; originally announced November 2012.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 102, 113503 (2013)

GdN Nanoisland-Based GaN Tunnel Junctions

Authors: Sriram Krishnamoorthy, Thomas Kent, Jing Yang, Pil Sung Park, Roberto Myers, Siddharth Rajan

Abstract: We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasibl… ▽ More We show that GdN nanoislands can enhance inter-band tunneling in GaN PN junctions by several orders of magnitude, enabling low optical absorption low-resistance tunnel junctions (specific resistivity 1.3 X 10-3 Ω-cm2) for various optoelectronic applications. We exploit the ability to overgrow high quality GaN over GdN nanoislands to create new nanoscale heterostructure designs that are not feasible in planar epitaxy. GdN nanoisland assisted inter-band tunneling was found to enhance tunneling in both of the polar orientations of GaN. Tunnel injection of holes was confirmed by low temperature operation of GaN p-n junction with a tunneling contact layer, showing strong electroluminescence down to 20K. The availability of tunnel junctions with negligible absorption could not only improve the efficiency of existing optoelectronic devices significantly, but also enable new electronic and optical devices based on wide band gap materials. △ Less

Submitted 19 May, 2013; v1 submitted 17 June, 2012; originally announced June 2012.

Journal ref: Nano Lett., 13 (6), 2570(2013)

Near room-temperature colossal magnetodielectricity and multiglass properties in partially-disordered La2NiMnO6

Authors: D. Choudhury, P. Mandal, R. Mathieu, A. Hazarika, S. Rajan, A. Sundaresan, U. V. Waghmare, R. Knut, O. Karis, P. Nordblad, D. D. Sarma

Abstract: We report magnetic, dielectric and magnetodielectric responses of pure monoclinic bulk phase of partially-disordered La2NiMnO6, exhibiting a spectrum of unusual properties and establish that this system intrinsically is a true multiglass with a large magnetodielectric coupling (8-20%) over a wide range of temperatures (150 - 300 K). Specifically, our results establish a unique way to obtain coloss… ▽ More We report magnetic, dielectric and magnetodielectric responses of pure monoclinic bulk phase of partially-disordered La2NiMnO6, exhibiting a spectrum of unusual properties and establish that this system intrinsically is a true multiglass with a large magnetodielectric coupling (8-20%) over a wide range of temperatures (150 - 300 K). Specifically, our results establish a unique way to obtain colossal magnetodielectricity, independent of any striction effects, by engineering the asymmetric hopping contribution to the dielectric constant via the tuning of the relative spin orientations between neighboring magnetic ions in a transition metal oxide system. We discuss the role of anti-site (Ni-Mn) disorder in emergence of these unusual properties. △ Less

Submitted 27 April, 2012; v1 submitted 20 February, 2012; originally announced February 2012.

Comments: 5 pages, 4 figures, Slightly revised version of previous article in condmat: arXiv:1202.4319v1

Journal ref: Phys. Rev. Lett. 108, 127201 (2012)

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Authors: Pouya Moetakef, Tyler A. Cain, Daniel G. Ouellette, Jack Y. Zhang, Dmitri O. Klenov, Anderson Janotti, Chris G. Van de Walle, Siddharth Rajan, S. James Allen, Susanne Stemmer

Abstract: Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thick… ▽ More Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately 1/2 electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution and the influence of different electrostatic boundary conditions are obtained. △ Less

Submitted 20 November, 2011; originally announced November 2011.

Comments: The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/