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Bulk transport paths through defects in floating zone and Al flux grown SmB$_6$
Authors:
Yun Suk Eo,
Alexa Rakoski,
Shriya Sinha,
Dmitri Mihaliov,
Wesley T. Fuhrman,
Shanta R. Saha,
Priscila F. S. Rosa,
Zachary Fisk,
Monica Ciomaga Hatnean,
Geetha Balakrishnan,
Juan R. Chamorro,
Seyed M. Koohpayeh,
Tyrel M. McQueen,
Boyoun Kang,
Myung-suk Song,
Beongki Cho,
Michael S. Fuhrer,
Johnpierre Paglione,
Cagliyan Kurdak
Abstract:
We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent res…
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We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hopping in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$.
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Submitted 17 November, 2020;
originally announced November 2020.
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Definitive Surface Magnetotransport Study of SmB$_{6}$
Authors:
Yun Suk Eo,
Steven Wolgast,
Alexa Rakoski,
Dmitri Mihaliov,
Boyoun Kang,
Myung-suk Song,
Beongki Cho,
Monica Ciomaga Hatnean,
Geetha Balakrishnan,
Zachary Fisk,
Shanta Saha,
Xiangfeng Wang,
Johnpierre Paglione,
Cagliyan Kurdak
Abstract:
After the theoretical prediction that SmB$_6$ is a topological Kondo insulator, there has been an explosion of studies on the SmB$_6$ surface. However, there is not yet an agreement on even the most basic quantities such as the surface carrier density and mobility. In this paper, we carefully revisit Corbino disk magnetotransport studies to find those surface transport parameters. We first show th…
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After the theoretical prediction that SmB$_6$ is a topological Kondo insulator, there has been an explosion of studies on the SmB$_6$ surface. However, there is not yet an agreement on even the most basic quantities such as the surface carrier density and mobility. In this paper, we carefully revisit Corbino disk magnetotransport studies to find those surface transport parameters. We first show that subsurface cracks exist in the SmB$_6$ crystals, arising both from surface preparation and during the crystal growth. We provide evidence that these hidden subsurface cracks are additional conduction channels, and the large disagreement between earlier surface SmB$_6$ studies may originate from previous interpretations not taking this extra conduction path into account. We provide an update of a more reliable magnetotransport data than the previous one (Phys. Rev. B 92, 115110) and find that the orders-of-magnitude large disagreements in carrier density and mobility come from the surface preparation and the transport geometry rather than the intrinsic sample quality. From this magnetotransport study, we find an updated estimate of the carrier density and mobility of 2.71$\times$10$^{13}$ (1/cm$^2$) and 104.5 (cm$^{2}$/V$\cdot$sec), respectively. We compare our results with other studies of the SmB$_6$ surface. By this comparison, we provide insight into the disagreements and agreements of the previously reported angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and magnetotorque quantum oscillations measurements.
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Submitted 15 November, 2019;
originally announced November 2019.
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Investigation of high-temperature bulk transport characteristics and skew scattering in samarium hexaboride
Authors:
Alexa Rakoski,
Yun Suk Eo,
Çağlıyan Kurdak,
Boyoun Kang,
Myungsuk Song,
Beongki Cho
Abstract:
A well-known feature in transport data of the topological Kondo insulator SmB$_6$ is the sign change in the Hall coefficient at 65 K. Carriers in SmB$_6$ are known to be negative, but above 65 K, the Hall sign suggests that the carriers are positive. Here, we extend Hall measurements up to 400 K and observe that the Hall coefficient changes back to the correct (negative) sign at about 305 K. We in…
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A well-known feature in transport data of the topological Kondo insulator SmB$_6$ is the sign change in the Hall coefficient at 65 K. Carriers in SmB$_6$ are known to be negative, but above 65 K, the Hall sign suggests that the carriers are positive. Here, we extend Hall measurements up to 400 K and observe that the Hall coefficient changes back to the correct (negative) sign at about 305 K. We interpret the anomalous sign of the Hall coefficient in the context of skew scattering arising from the strong correlations between the $f$ and $d$ electrons. At energy scales where the gap is closed, the number of $d$ electrons in resonance with the $f$ electrons at the Fermi energy varies. When a large proportion of $d$ and $f$ electrons are in resonance, skew scattering is dominant, leading to the observation of the positive sign, but when fewer are in resonance, conventional scattering mechanisms dominate instead.
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Submitted 22 July, 2019;
originally announced July 2019.
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Robustness of the Insulating Bulk in the Topological Kondo Insulator SmB$_{6}$
Authors:
Yun Suk Eo,
Alexa Rakoski,
Juniar Lucien,
Dmitri Mihaliov,
Cagliyan Kurdak,
Priscila Ferrari Silveira Rosa,
Dae-Jeong Kim,
Zachary Fisk
Abstract:
We used the inverted resistance method to extend the bulk resistivity of SmB$_{6}$ to a regime where the surface conduction overwhelms the bulk. Remarkably, the bulk resistivity shows an intrinsic thermally activated behavior that changes ten orders of magnitude, suggesting that it is an ideal insulator that is immune to disorder. Non-stoichiometrically-grown SmB$_{6}$ samples also show an almost…
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We used the inverted resistance method to extend the bulk resistivity of SmB$_{6}$ to a regime where the surface conduction overwhelms the bulk. Remarkably, the bulk resistivity shows an intrinsic thermally activated behavior that changes ten orders of magnitude, suggesting that it is an ideal insulator that is immune to disorder. Non-stoichiometrically-grown SmB$_{6}$ samples also show an almost identical thermally activated behavior. At low temperatures, however, these samples show a mysterious high bulk resistivity plateau, which may arise from extended defect conduction in a 3D TI.
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Submitted 2 March, 2018;
originally announced March 2018.
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Understanding low-temperature bulk transport in samarium hexaboride without relying on in-gap bulk states
Authors:
Alexa Rakoski,
Yun Suk Eo,
Kai Sun,
Cagliyan Kurdak
Abstract:
We present a new model to explain the difference between the transport and spectroscopy gaps in samarium hexaboride (SmB$_6$), which has been a mystery for some time. We propose that SmB$_6$ can be modeled as an intrinsic semiconductor with a depletion length that diverges at cryogenic temperatures. In this model, we find a self-consistent solution to Poisson's equation in the bulk, with boundary…
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We present a new model to explain the difference between the transport and spectroscopy gaps in samarium hexaboride (SmB$_6$), which has been a mystery for some time. We propose that SmB$_6$ can be modeled as an intrinsic semiconductor with a depletion length that diverges at cryogenic temperatures. In this model, we find a self-consistent solution to Poisson's equation in the bulk, with boundary conditions based on Fermi energy pinning due to surface charges. The solution yields band bending in the bulk; this explains the difference between the two gaps because spectroscopic methods measure the gap near the surface, while transport measures the average over the bulk. We also connect the model to transport parameters, including the Hall coefficient and thermopower, using semiclassical transport theory. The divergence of the depletion length additionally explains the 10-12 K feature in data for these parameters, demonstrating a crossover from bulk dominated transport above this temperature to surface-dominated transport below this temperature. We find good agreement between our model and a collection of transport data from 4-40 K. This model can also be generalized to materials with similar band structure.
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Submitted 8 February, 2017;
originally announced February 2017.
