Showing 1–15 of 15 results for author: Roose, B

Roadmap on Photovoltaic Absorber Materials for Sustainable Energy Conversion

Authors: James C. Blakesley, Ruy S. Bonilla, Marina Freitag, Alex M. Ganose, Nicola Gasparini, Pascal Kaienburg, George Koutsourakis, Jonathan D. Major, Jenny Nelson, Nakita K. Noel, Bart Roose, Jae Sung Yun, Simon Aliwell, Pietro P. Altermatt, Tayebeh Ameri, Virgil Andrei, Ardalan Armin, Diego Bagnis, Jenny Baker, Hamish Beath, Mathieu Bellanger, Philippe Berrouard, Jochen Blumberger, Stuart A. Boden, Hugo Bronstein , et al. (61 additional authors not shown)

Abstract: Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.… ▽ More Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO₂eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.5 TWp by 2050 according to the International Renewable Energy Agency, which is considered to be a highly conservative estimate. In 2020, the Henry Royce Institute brought together the UK PV community to discuss the critical technological and infrastructure challenges that need to be overcome to address the vast challenges in accelerating PV deployment. Herein, we examine the key developments in the global community, especially the progress made in the field since this earlier roadmap, bringing together experts primarily from the UK across the breadth of the photovoltaics community. The focus is both on the challenges in improving the efficiency, stability and levelized cost of electricity of current technologies for utility-scale PVs, as well as the fundamental questions in novel technologies that can have a significant impact on emerging markets, such as indoor PVs, space PVs, and agrivoltaics. We discuss challenges in advanced metrology and computational tools, as well as the growing synergies between PVs and solar fuels, and offer a perspective on the environmental sustainability of the PV industry. Through this roadmap, we emphasize promising pathways forward in both the short- and long-term, and for communities working on technologies across a range of maturity levels to learn from each other. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Comments: 160 pages, 21 figures

Tailoring Interlayer Charge Transfer Dynamics in 2D Perovskites with Electroactive Spacer Molecules

Authors: Yorrick Boeije, Wouter T. M. Van Gompel, Youcheng Zhang, Pratyush Ghosh, Szymon J. Zelewski, Arthur Maufort, Bart Roose, Zher Ying Ooi, Rituparno Chowdhury, Ilan Devroey, Stijn Lenaers, Alasdair Tew, Linjie Dai, Krishanu Dey, Hayden Salway, Richard H. Friend, Henning Sirringhaus, Laurence Lutsen, Dirk Vanderzande, Akshay Rao, Samuel D. Stranks

Abstract: The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore optoelectronic properties of perovskites. Here, we use optically and… ▽ More The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore optoelectronic properties of perovskites. Here, we use optically and electronically active carbazole-based Cz-Ci molecules, where Ci indicates an alkylammonium chain and i indicates the number of CH2 units in the chain, varying from 3-5, as cations in the 2D perovskite structure. By investigating the photophysics and charge transport characteristics of (Cz-Ci)2PbI4, we demonstrate a tunable electronic coupling between the inorganic lead-halide and organic layers. The strongest interlayer electronic coupling was found for (Cz-C3)2PbI4, where photothermal deflection spectroscopy results remarkably demonstrate an organic-inorganic charge transfer state. Ultrafast transient absorption spectroscopy measurements demonstrate ultrafast hole transfer from the photoexcited lead-halide layer to the Cz-Ci molecules, the efficiency of which increases by varying the chain length from i=5 to i=3. The charge transfer results in long-lived carriers (10-100 ns) and quenched emission, in stark contrast with the fast (sub-ns) and efficient radiative decay of bound excitons in the more conventional 2D perovskite (PEA)2PbI4, in which phenylethylammonium (PEA) acts as an inert spacer. Electrical charge transport measurements further support enhanced interlayer coupling, showing increased out-of-plane carrier mobility from i=5 to i=3. This study paves the way for the rational design of 2D perovskites with combined inorganic-organic electronic proper-ties through the wide range of functionalities available in the world of organics. △ Less

Submitted 16 June, 2023; originally announced June 2023.

Comments: 16 main text pages + 20 supplemental text pages, 5 main text figures + 19 supplemental figures

Substitution of Lead with Tin Suppresses Ionic Transport in Halide Perovskite Optoelectronics

Authors: Krishanu Dey, Dibyajyoti Ghosh, Matthew Pilot, Samuel R Pering, Bart Roose, Priyanka Deswal, Satyaprasad P Senanayak, Petra J Cameron, M Saiful Islam, Samuel D Stranks

Abstract: Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) ha… ▽ More Despite the rapid rise in the performance of a variety of perovskite optoelectronic devices with vertical charge transport, the effects of ion migration remain a common and longstanding Achilles heel limiting the long-term operational stability of lead halide perovskite devices. However, there is still limited understanding of the impact of tin (Sn) substitution on the ion dynamics of lead (Pb) halide perovskites. Here, we employ scan-rate-dependent current-voltage measurements on Pb and mixed Pb-Sn perovskite solar cells to show that short circuit current losses at lower scan rates, which can be traced to the presence of mobile ions, are present in both kinds of perovskites. To understand the kinetics of ion migration, we carry out scan-rate-dependent hysteresis analyses and temperature-dependent impedance spectroscopy measurements, which demonstrate suppressed ion migration in Pb-Sn devices compared to their Pb-only analogues. By linking these experimental observations to first-principles calculations on mixed Pb-Sn perovskites, we reveal the key role played by Sn vacancies in increasing the iodide ion migration barrier due to local structural distortions. These results highlight the beneficial effect of Sn substitution in mitigating undesirable ion migration in halide perovskites, with potential implications for future device development. △ Less

Submitted 3 May, 2023; originally announced May 2023.

Comments: 18 pages, 4 figures

Efficient all-perovskite tandem solar cells by dual-interface optimisation of vacuum-deposited wide-bandgap perovskite

Authors: Yu-Hsien Chiang, Kyle Frohna, Hayden Salway, Anna Abfalterer, Bart Roose, Miguel Anaya, Samuel D. Stranks

Abstract: Tandem perovskite solar cells beckon as lower cost alternatives to conventional single junction solar cells, with all-perovskite tandem photovoltaic architectures showing power conversion efficiencies up to 26.4%. Solution-processing approaches for the perovskite layers have enabled rapid 2optimization of perovskite solar technologies, but new deposition routes are necessary to enable modularity a… ▽ More Tandem perovskite solar cells beckon as lower cost alternatives to conventional single junction solar cells, with all-perovskite tandem photovoltaic architectures showing power conversion efficiencies up to 26.4%. Solution-processing approaches for the perovskite layers have enabled rapid 2optimization of perovskite solar technologies, but new deposition routes are necessary to enable modularity and scalability, facilitating further efficiency improvements and technology adoption. Here, we utilise a 4-source vacuum deposition method to deposit FA$_{0.7}$ Cs$_{0.3}$Pb(I$_x$Br$_{1-x}$)$_3$ perovskite, where the bandgap is widened through fine control over the halide content. We show how the combined use of a MeO-2PACz self-assembled monolayer as hole transporting material and passivation of the perovskite absorber with ethylenediammonium diiodide reduces non-radiative losses, with this dual-interface treatment resulting in efficiencies of 17.8% in solar cells based on vacuum deposited perovskites with bandgap of 1.76 eV. By similarly passivating a narrow bandgap FA$_{0.75}$Cs$_{0.25}$Pb$_{0.5}$Sn$_{0.5}$I$_3$ perovskite and combining it with sub-cells of evaporated FA$_{0.7}$Cs$_{0.3}$Pb(I$_{0.64}$Br$_{0.36}$)$_3$, we report a 2-terminal all-perovskite tandem solar cell with champion open circuit voltage and power conversion efficiency of 2.06 V and 24.1%, respectively. The implementation of our dry deposition method enables high reproducibility in complex device architectures, opening avenues for modular, scalable multi-junction devices where the substrate choice is unrestricted. △ Less

Submitted 6 August, 2022; originally announced August 2022.

Comments: 28 pages, 5 figures

Local Symmetry Breaking Drives Picosecond Spin Domain Formation in Polycrystalline Semiconducting Films

Authors: Arjun Ashoka, Satyawan Nagane, Nives Strkalj, Bart Roose, Jooyoung Sung, Judith L. MacManus-Driscoll, Samuel D. Stranks, Sascha Feldmann, Akshay Rao

Abstract: Photoinduced spin-charge interconversion in semiconductors with spin-orbit coupling could provide a route to optically addressable spintronics without the use of external magnetic fields. A central question is whether the resulting spin-associated charge currents are robust to structural disorder, which is inherent to polycrystalline semiconductors that are desirable for device applications. Using… ▽ More Photoinduced spin-charge interconversion in semiconductors with spin-orbit coupling could provide a route to optically addressable spintronics without the use of external magnetic fields. A central question is whether the resulting spin-associated charge currents are robust to structural disorder, which is inherent to polycrystalline semiconductors that are desirable for device applications. Using femtosecond circular polarization-resolved pump-probe microscopy on polycrystalline halide perovskite thin films, we observe the photoinduced ultrafast formation of spin-polarized positive and, unexpectedly, negative spin domains on the micron scale formed through lateral currents. Further, the polarization of these domains and lateral transport direction is switched upon switching the polarization of the pump helicity. Micron scale variations in the intensity of optical second-harmonic generation and vertical piezoresponse suggest that the spin domain formation is driven by the presence of strong local inversion symmetry breaking via inter-grain structural disorder. We propose that this leads to spatially varying Rashba-like spin textures that drive spin-momentum locked currents, leading to local spin accumulation. Our results establish ultrafast spin domain formation in polycrystalline semiconductors as a new optically addressable platform for nanoscale spin-device physics. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Charge Transport in Mixed Metal Halide Perovskite Semiconductors

Authors: Satyaprasad P. Senanayak, Krishanu Dey, Ravichandran Shivanna, Weiwei Li, Dibyajyoti Ghosh, Bart Roose, Youcheng Zhang, Zahra Andaji-Garmaroudi, Nikhil Tiwale, Judith L. MacManus Driscoll, Richard Friend, Samuel D. Stranks, Henning Sirringhaus

Abstract: Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectro… ▽ More Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectronic device operation. Here, we address both these challenges and demonstrate that field-effect transistors (FETs) based on methylammonium-free, mixed-metal (Pb/Sn) perovskite compositions, that are widely studied for solar cell and light-emitting diode applications, do not suffer from ion migration effects as their pure Pb counterparts and reliably exhibit hysteresis free p-type transport with high mobility reaching 5.4 $cm^2/Vs$, ON/OFF ratio approaching $10^6$, and normalized channel conductance of 3 S/m. The reduced ion migration is also manifested in an activated temperature dependence of the field-effect mobility with low activation energy, which reflects a significant density of shallow electronic defects. We visualize the suppressed in-plane ionic migration in Sn-containing perovskites compared to their pure-Pb counterparts using photoluminescence microscopy under bias and demonstrate promising voltage and current-stress device operational stabilities. Our work establishes FETs as an excellent platform for providing fundamental insights into the doping, defect and charge transport physics of mixed-metal halide perovskite semiconductors to advance their applications in optoelectronic devices. △ Less

Submitted 5 February, 2022; originally announced February 2022.

Comments: 26 pages, 5 figures, Satyaprasad P. Senanayak and Krishanu Dey contributed equally

Local Nanoscale Defective Phase Impurities Are the Sites of Degradation in Halide Perovskite Devices

Authors: Stuart Macpherson, Tiarnan A. S. Doherty, Andrew J. Winchester, Sofiia Kosar, Duncan N. Johnstone, Yu-Hsien Chiang, Krzystof Galkowski, Miguel Anaya, Kyle Frohna, Affan N. Iqbal, Bart Roose, Zahra Andaji-Garmaroudi, Paul A. Midgley, Keshav M. Dani, Samuel D. Stranks

Abstract: Halide perovskites excel in the pursuit of highly efficient thin film photovoltaics, with power conversion efficiencies reaching 25.5% in single junction and 29.5% in tandem halide perovskite/silicon solar cell configurations. Operational stability of perovskite solar cells remains a barrier to their commercialisation, yet a fundamental understanding of degradation processes, including the specifi… ▽ More Halide perovskites excel in the pursuit of highly efficient thin film photovoltaics, with power conversion efficiencies reaching 25.5% in single junction and 29.5% in tandem halide perovskite/silicon solar cell configurations. Operational stability of perovskite solar cells remains a barrier to their commercialisation, yet a fundamental understanding of degradation processes, including the specific sites at which failure mechanisms occur, is lacking. Recently, we reported that performance-limiting deep sub-bandgap states appear in nanoscale clusters at particular grain boundaries in state-of-the-art $Cs_{0.05}FA_{0.78}MA_{0.17}Pb(I_{0.83}Br_{0.17})_{3}$ (MA=methylammonium, FA=formamidinium) perovskite films. Here, we combine multimodal microscopy to show that these very nanoscale defect clusters, which go otherwise undetected with bulk measurements, are sites at which degradation seeds. We use photoemission electron microscopy to visualise trap clusters and observe that these specific sites grow in defect density over time under illumination, leading to local reductions in performance parameters. Scanning electron diffraction measurements reveal concomitant structural changes at phase impurities associated with trap clusters, with rapid conversion to metallic lead through iodine depletion, eventually resulting in pinhole formation. By contrast, illumination in the presence of oxygen reduces defect densities and reverses performance degradation at these local clusters, where phase impurities instead convert to amorphous and electronically benign lead oxide. Our work shows that the trapping of charge carriers at sites associated with phase impurities, itself reducing performance, catalyses redox reactions that compromise device longevity. Importantly, we reveal that both performance losses and intrinsic degradation can be mitigated by eliminating these defective clusters. △ Less

Submitted 20 July, 2021; originally announced July 2021.

Comments: 23 pages, 3 figures, Stuart Macpherson and Tiarnan A. S. Doherty contributed equally

Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states

Authors: Zi-Huai Zhang, Paul Stevenson, Gergo Thiering, Brendon C. Rose, Ding Huang, Andrew M. Edmonds, Matthew L. Markham, Stephen A. Lyon, Adam Gali, Nathalie P. de Leon

Abstract: Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detecte… ▽ More Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems. △ Less

Submitted 29 December, 2020; v1 submitted 26 April, 2020; originally announced April 2020.

Journal ref: Physical Review Letters 125, 237402 (2020)

Narrow optical linewidths in erbium implanted in TiO$_2$

Authors: Christopher M. Phenicie, Paul Stevenson, Sacha Welinski, Brendon C. Rose, Abraham T. Asfaw, Robert J. Cava, Stephen A. Lyon, Nathalie P. de Leon, Jeff D. Thompson

Abstract: Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magn… ▽ More Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er$^{3+}$ ions can be introduced via ion implantation into TiO$_2$, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er$^{3+}$ into the Ti$^{4+}$ site (40% yield), and measure narrow inhomogeneous spin and optical linewidths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er$^{3+}$. This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts, and is a significant step towards realizing individually addressed rare earth ions with long spin coherence times for quantum technologies. △ Less

Submitted 13 September, 2019; originally announced September 2019.

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Authors: Philipp Ross, Brendon C. Rose, Cheuk C. Lo, Mike L. W. Thewalt, Alexei M. Tyryshkin, Stephen A. Lyon, John J. L. Morton

Abstract: Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such… ▽ More Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such interactions requires even lower donor concentrations, which lie below the detection limit for typical electron spin resonance (ESR) spectrometers. Here we describe an alternative method for phosphorus donor ESR detection, exploiting the spin-to-charge conversion provided by the optical donor bound exciton transition. We characterise the method and its dependence on laser power and use it to measure a coherence time of $T_2 = 130 $ms for one of the purest silicon samples grown to-date ([P]$ = 5\times 10^{11} $cm$^{-3}$). We then benchmark this result using an alternative application of the donor bound exciton transition: optically polarising the donor spins before using conventional ESR detection at 1.7~K for a sample with [P]$ = 4\times10^{12} $cm$^{-3}$, and measuring in this case a $T_2$ of 350 ms. △ Less

Submitted 28 December, 2020; v1 submitted 4 February, 2019; originally announced February 2019.

Journal ref: Phys. Rev. Applied 11, 054014 (2019)

Strongly Anisotropic Spin Relaxation in the Neutral Silicon Vacancy Center in Diamond

Authors: Brendon C. Rose, Gergo Thiering, Alexei M. Tyryshkin, Andrew M. Edmonds, Matthew L. Markham, Adam Gali, Stephen A. Lyon, Nathalie P. de Leon

Abstract: Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is str… ▽ More Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is strongly anisotropic with respect to magnetic field orientation. As the angle of the magnetic field is rotated relative to the symmetry axis of the defect, T1 is reduced by over three orders of magnitude. The electron spin coherence time (T2) follows the same temperature dependence but is drastically shorter than T1. We propose that these observations result from phonon-mediated transitions to a low lying excited state that are spin conserving when the magnetic field is aligned with the defect axis, and we discuss likely candidates for this excited state. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 98, 235140 (2018)

Observation of an environmentally insensitive solid state spin defect in diamond

Authors: Brendon C. Rose, Ding Huang, Zi-Huai Zhang, Alexei M. Tyryshkin, Sorawis Sangtawesin, Srikanth Srinivasan, Lorne Loudin, Matthew L. Markham, Andrew M. Edmonds, Daniel J. Twitchen, Stephen A. Lyon, Nathalie P. de Leon

Abstract: Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the opt… ▽ More Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the optical transition frequency over time. We report a novel color center with insensitivity to both of these sources of environmental decoherence: the neutral charge state of silicon vacancy (SiV0). Through careful material engineering, we achieve over 80% conversion of implanted silicon to SiV0. SiV0 exhibits excellent spin properties, with spin-lattice relaxation times (T1) approaching one minute and coherence times (T2) approaching one second, as well as excellent optical properties, with approximately 90% of its emission into the zero-phonon line and near-transform limited optical linewidths. These combined properties make SiV0 a promising defect for quantum networks. △ Less

Submitted 5 June, 2017; originally announced June 2017.

Coherent Rabi dynamics of a superradiant spin ensemble in a microwave cavity

Authors: B. C. Rose, A. M. Tyryshkin, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. L. W. Thewalt, K. M. Itoh, S. A. Lyon

Abstract: We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the sp… ▽ More We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the spin ensemble-cavity polariton resonances of 2$g\sqrt{N}$ = 580 kHz (where each spin is coupled with strength $g$) in a cavity with a quality factor of 75,000 ($γ\ll κ\approx$ 60 kHz where $γ$ and $κ$ are the spin dephasing and cavity loss rates, respectively). The spin ensemble has a long dephasing time (T$_2^*$ = 9 $μ$s) providing a wide window for viewing the dynamics of the coupled spin ensemble-cavity system. The free induction decay shows up to a dozen collapses and revivals revealing a coherent exchange of excitations between the superradiant state of the spin ensemble and the cavity at the rate $g\sqrt{N}$. The ensemble is found to evolve as a single large pseudospin according to the Tavis-Cummings model due to minimal inhomogeneous broadening and uniform spin-cavity coupling. We demonstrate independent control of the total spin and the initial Z-projection of the psuedospin using optical excitation and microwave manipulation respectively. We vary the microwave excitation power to rotate the pseudospin on the Bloch sphere and observe a long delay in the onset of the superradiant emission as the pseudospin approaches full inversion. This delay is accompanied by an abrupt $π$ phase shift in the peusdospin microwave emission. The scaling of this delay with the initial angle and the sudden phase shift are explained by the Tavis-Cummings model. △ Less

Submitted 1 February, 2017; originally announced February 2017.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. X 7, 031002 (2017)

Spin Coherence and $^{14}$N ESEEM Effects of Nitrogen-Vacancy Centers in Diamond with X-band Pulsed ESR

Authors: B. C. Rose, C. D. Weis, A. M. Tyryshkin, T. Schenkel, S. A. Lyon

Abstract: Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV$^-$) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV$^-$ centers in synthetic type IIb diamonds (nitrogen impurity concentration $<1$~ppm) are prepared with bulk concentrations of $2\cdot 10^{13}$ cm$^{-3}$ to $4\cdot 10^{14}$ cm$^{-3}$ by high-energy electr… ▽ More Pulsed ESR experiments are reported for ensembles of negatively-charged nitrogen-vacancy centers (NV$^-$) in diamonds at X-band magnetic fields (280-400 mT) and low temperatures (2-70 K). The NV$^-$ centers in synthetic type IIb diamonds (nitrogen impurity concentration $<1$~ppm) are prepared with bulk concentrations of $2\cdot 10^{13}$ cm$^{-3}$ to $4\cdot 10^{14}$ cm$^{-3}$ by high-energy electron irradiation and subsequent annealing. We find that a proper post-radiation anneal (1000$^\circ$C for 60 mins) is critically important to repair the radiation damage and to recover long electron spin coherence times for NV$^-$s. After the annealing, spin coherence times of T$_2 = 0.74$~ms at 5~K are achieved, being only limited by $^{13}$C nuclear spectral diffusion in natural abundance diamonds. At X-band magnetic fields, strong electron spin echo envelope modulation (ESEEM) is observed originating from the central $^{14}$N nucleus. The ESEEM spectral analysis allows for accurate determination of the $^{14}$N nuclear hypefine and quadrupole tensors. In addition, the ESEEM effects from two proximal $^{13}$C sites (second-nearest neighbor and fourth-nearest neighbor) are resolved and the respective $^{13}$C hyperfine coupling constants are extracted. △ Less

Submitted 13 March, 2016; originally announced March 2016.

Comments: 10 pages, 5 figures

Addressing spin transitions on 209Bi donors in silicon using circularly-polarized microwaves

Authors: T. Yasukawa, A. J. Sigillito, B. C. Rose, A. M. Tyryshkin, S. A. Lyon

Abstract: Over the past decade donor spin qubits in isotopically enriched $^{28}$Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large nuclear spin which gives rise to clock transitions (first-order insensitive to magnetic field noise). At every clock transition there are two nearly degenerate tra… ▽ More Over the past decade donor spin qubits in isotopically enriched $^{28}$Si have been intensely studied due to their exceptionally long coherence times. More recently bismuth donor electron spins have become popular because Bi has a large nuclear spin which gives rise to clock transitions (first-order insensitive to magnetic field noise). At every clock transition there are two nearly degenerate transitions between four distinct states which can be used as a pair of qubits. Here it is experimentally demonstrated that these transitions are excited by microwaves of opposite helicity such that they can be selectively driven by varying microwave polarization. This work uses a combination of a superconducting coplanar waveguide (CPW) microresonator and a dielectric resonator to flexibly generate arbitrary elliptical polarizations while retaining the high sensitivity of the CPW. △ Less

Submitted 21 January, 2016; v1 submitted 21 January, 2016; originally announced January 2016.

Journal ref: Phys. Rev. B 93, 121306 (2016)