Intrinsic core level photoemission of suspended graphene
Authors:
Toma Susi,
Mattia Scardamaglia,
Kimmo Mustonen,
Andreas Mittelberger,
Mohamed Al-Hada,
Matteo Amati,
Hikmet Sezen,
Patrick Zeller,
Ask H. Larsen,
Clemens Mangler,
Jannik C. Meyer,
Luca Gregoratti,
Carla Bittencourt,
Jani Kotakoski
Abstract:
X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectrosco…
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X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectroscopy with synchrotron-based scanning photoelectron microscopy to characterize the same areas of suspended graphene samples down to the atomic level. This allows us to assign spectral signals to regions of precisely known layer number and purity. The core level binding energy of the monolayer is measured at 284.70 eV, thus 0.28 eV higher than that of graphite, with intermediate values found for few layers. This trend is reproduced by density functional theory with or without explicit van der Waals interactions, indicating that intralayer charge rearrangement dominates, but in our model of static screening the magnitudes of the shifts are underestimated by half.
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Submitted 31 July, 2018;
originally announced July 2018.
Chemical exfoliation of MoS2 leads to semiconducting 1T' phase and not the metallic 1T phase
Authors:
Banabir Pal,
Anjali Singh,
Sharada. G,
Pratibha Mahale,
Abhinav Kumar,
S. Thirupathaiah,
H. Sezen,
M. Amati,
Luca Gregoratti,
Umesh V. Waghmare,
D. D. Sarma
Abstract:
A trigonal phase existing only as small patches on chemically exfoliated few layer, thermodynamically stable 1H phase of MoS2 is believed to influence critically properties of MoS2 based devices. This phase has been most often attributed to the metallic 1T phase. We investigate the electronic structure of chemically exfoliated MoS2 few layered systems using spatially resolved (lesser than 120 nm r…
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A trigonal phase existing only as small patches on chemically exfoliated few layer, thermodynamically stable 1H phase of MoS2 is believed to influence critically properties of MoS2 based devices. This phase has been most often attributed to the metallic 1T phase. We investigate the electronic structure of chemically exfoliated MoS2 few layered systems using spatially resolved (lesser than 120 nm resolution) photoemission spectroscopy and Raman spectroscopy in conjunction with state-of-the-art electronic structure calculations. On the basis of these results, we establish that the ground state of this phase is a small gap (~90 meV) semiconductor in contrast to most claims in the literature; we also identify the specific trigonal (1T') structure it has among many suggested ones.
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Submitted 2 March, 2017;
originally announced March 2017.
