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Spatially-Modulated Silicon Interface Energetics via Hydrogen Plasma-Assisted Atomic Layer Deposition of Ultrathin Alumina
Authors:
Alex Henning,
Johannes D. Bartl,
Lukas Wolz,
Maximilian Christis,
Felix Rauh,
Michele Bissolo,
Theresa Grünleitner,
Johanna Eichhorn,
Patrick Zeller,
Matteo Amati,
Luca Gregoratti,
Jonathan J. Finley,
Bernhard Rieger,
Martin Stutzmann,
Ian D. Sharp
Abstract:
Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale. While ALD allows the synthesis of conformal films at low temperature with utmost control over the thickness, atomically-defined closed coatings and surface modi…
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Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on reproducible and scalable processes for interface manipulation of 3D structured surfaces on the atomic scale. While ALD allows the synthesis of conformal films at low temperature with utmost control over the thickness, atomically-defined closed coatings and surface modifications are still extremely difficult to achieve because of three-dimensional growth during nucleation. Here, we present a route towards sub-nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon (Si) substrates for the spatial control of the surface charge density and interface energetics. We use trimethylaluminum (TMA) in combination with remote hydrogen plasma instead of a gas-phase oxidant for the transformation of silicon oxide into alumina (AlOx). During the initial ALD cycles, TMA reacts with the surface oxide (SiO2) on silicon until there is a saturation of bindings sites, after which the oxygen from the underlying surface oxide is consumed, thereby transforming the silicon oxide into Si capped with AlOx. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which we exploit to create sub-nanometer thin and continuous AlOx layers deposited in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing step heights as small as 0.3 nm and surface potential steps in excess of 0.4 V. In addition, the introduction of fixed negative charges of $9 \times 10^{12}$ cm$^{-2}$ enables modulation of the surface band bending, which is relevant to the field-effect passivation of Si and low-impedance charge transfer across contact interfaces.
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Submitted 24 September, 2022; v1 submitted 29 October, 2021;
originally announced November 2021.
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Near ambient pressure photoelectron spectro-microscopy: from gas-solid interface to operando devices
Authors:
Matteo Amati,
Luca Gregoratti,
Patrick Zeller,
Mark Greiner,
Mattia Scardamaglia,
Benjamin Junker,
Tamara Ruß,
Udo Weimar,
Nicolae Barsan,
Marco Favaro,
Abdulaziz Alharbi,
Ingvild J. T. Jensen,
Ayaz Ali,
Branson D. Belle
Abstract:
Near Ambient Pressure Scanning Photoelectron Microscopy adds to the widely used photoemission spectroscopy and its chemically selective capability two key features: (i) the possibility to chemically analyse samples in a more realistic environmental, gas pressure condition, and (ii) the capability to investigate a system at the relevant spatial scale. To achieve these goals the approach developed a…
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Near Ambient Pressure Scanning Photoelectron Microscopy adds to the widely used photoemission spectroscopy and its chemically selective capability two key features: (i) the possibility to chemically analyse samples in a more realistic environmental, gas pressure condition, and (ii) the capability to investigate a system at the relevant spatial scale. To achieve these goals the approach developed at the ESCA Microscopy beamline at the Elettra Synchrotron facility combines the submicron lateral resolution of a Scanning Photoelectron Microscope with a custom designed Near Ambient Pressure Cell where a gas pressure up to 0.1 mbar is confined inside it around the sample. In this manuscript a review of experiments performed with this unique setup will be presented to illustrate its potentiality in both fundamental and applicative research such as the oxidation reactivity and gas sensitivity of metal oxides and semiconductors. In particular the capability to do operando experiment with this setup opens the possibility to perform investigations with active devices to properly address the real nature of the studied systems, because it can yield to more conclusive results when microscopy and spectroscopy are simultaneously combined in a single technique.
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Submitted 16 April, 2021;
originally announced April 2021.
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Interfacial studies in CNT fibre/TiO$_{2}$ photoelectrodes for efficient H$_{2}$ production
Authors:
Alicia Moya,
Mariam Barawi,
Belén Alemán,
Patrick Zeller,
Matteo Amati,
Alfonso Monreal-Bernal,
Luca Gregoratti,
Víctor A. de la Peña O'Shea,
Juan J. Vilatela
Abstract:
An attractive class of materials for photo(electro)chemical reactions are hybrids based on semiconducting metal oxides and nanocarbons (e.g. carbon nanotubes (CNT), graphene), where the nanocarbon acts as a highly-stable conductive scaffold onto which the nanostructured inorganic phase can be immobilised; an architecture that maximises surface area and minimises charge transport/transfer resistanc…
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An attractive class of materials for photo(electro)chemical reactions are hybrids based on semiconducting metal oxides and nanocarbons (e.g. carbon nanotubes (CNT), graphene), where the nanocarbon acts as a highly-stable conductive scaffold onto which the nanostructured inorganic phase can be immobilised; an architecture that maximises surface area and minimises charge transport/transfer resistance. TiO$_{2}$/CNT photoanodes produced by atomic layer deposition on CNT fabrics are shown to be efficient for H$_{2}$ production ($0.07 μmol/min$ $H_{2}$ at $0.2V$ $vs Ag/AgCl$), nearly doubling the performance of TiO$_{2}$ deposited on planar substrates, with $100 \%$ Faradaic efficiency. The results are rationalised based on electrochemical impedance spectroscopy measurements showing a large reduction in photoelectron transport resistance compared to control samples and a higher surface area. The low TiO$_{2}$/CNT interfacial charge transfer resistance ($10 Ω$) is consistent with the presence of an interfacial Ti-O-C bond and corresponding electronic hybridisation determined by spatially-resolved Scanning Photoelectron Microscopy (SPEM) using synchrotron radiation.
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Submitted 2 December, 2020;
originally announced December 2020.
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On the Origin of Metallicity and Stability of the Metastable Phase in Chemically Exfoliated MoS$_2$
Authors:
Debasmita Pariari,
Rahul Mahavir Varma,
Maya N. Nair,
Patrick Zeller,
Matteo Amati,
Luca Gregoratti,
Karuna Kar Nanda,
D. D. Sarma
Abstract:
Chemical exfoliation of MoS$_2$ via Li-intercalation route has led to many desirable properties and spectacular applications due to the presence of a metastable state in addition to the stable H phase. However, the nature of the specific metastable phase formed, and its basic charge conduction properties have remained controversial. Using spatially resolved Raman spectroscopy (~1 micrometer resolu…
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Chemical exfoliation of MoS$_2$ via Li-intercalation route has led to many desirable properties and spectacular applications due to the presence of a metastable state in addition to the stable H phase. However, the nature of the specific metastable phase formed, and its basic charge conduction properties have remained controversial. Using spatially resolved Raman spectroscopy (~1 micrometer resolution) and photoelectron spectroscopy (~120 nm resolution), we probe such chemically exfoliated MoS$_2$ samples in comparison to a mechanically exfoliated H phase sample and confirm that the dominant metastable state formed by this approach is a distorted T' state with a small semiconducting gap. Investigating two such samples with different extents of Li residues present, we establish that Li+ ions, not only help to exfoliate MoS$_2$ into few layer samples, but also contribute to enhancing the relative stability of the metastable state as well as dope the system with electrons, giving rise to a lightly doped small bandgap system with the T' structure, responsible for its spectacular properties.
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Submitted 2 May, 2020;
originally announced May 2020.
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Focused Electron and X-ray Beam Crosslinking in Liquids for Nanoscale Hydrogels 3D Printing and Encapsulation
Authors:
Tanya Gupta,
Evgheni Strelcov,
Glenn Holland,
Joshua Schumacher,
Yang Yang,
Mandy Esch,
Vladimir Aksyuk,
Patrick Zeller,
Matteo Amati,
Luca Gregoratti,
Andrei Kolmakov
Abstract:
Additive fabrication of biocompatible 3D structures out of liquid hydrogel solutions has become pivotal technology for tissue engineering, soft robotics, biosensing, drug delivery, etc. Electron and X-ray lithography are well suited to pattern nanoscopic features out of dry polymers, however, the direct additive manufacturing in hydrogel solutions with these powerful tools is hard to implement due…
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Additive fabrication of biocompatible 3D structures out of liquid hydrogel solutions has become pivotal technology for tissue engineering, soft robotics, biosensing, drug delivery, etc. Electron and X-ray lithography are well suited to pattern nanoscopic features out of dry polymers, however, the direct additive manufacturing in hydrogel solutions with these powerful tools is hard to implement due to vacuum incompatibility of hydrated samples. In this work, we resolve this principal impediment and demonstrate a technique for in-liquid hydrogel 3D-sculpturing separating high vacuum instrumentation and volatile sample with ultrathin molecularly impermeable membranes transparent to low-energy electrons and soft X-rays. Using either scanning focused electron or synchrotron soft X-ray beams, the principle of the technique, particularities of the in-liquid crosslinking mechanism and factors affecting the ultimate gel feature size are described and validated through the comparison of experiments and simulations. The potential of this technique is demonstrated on a few practical examples such as encapsulation of nanoparticles and live-cell as well as fabrication of mesoscopic 3D-hydrogel structures via modulation of the beam energy
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Submitted 2 April, 2019;
originally announced April 2019.
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Intrinsic core level photoemission of suspended graphene
Authors:
Toma Susi,
Mattia Scardamaglia,
Kimmo Mustonen,
Andreas Mittelberger,
Mohamed Al-Hada,
Matteo Amati,
Hikmet Sezen,
Patrick Zeller,
Ask H. Larsen,
Clemens Mangler,
Jannik C. Meyer,
Luca Gregoratti,
Carla Bittencourt,
Jani Kotakoski
Abstract:
X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectrosco…
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X-ray photoelectron spectroscopy of graphene is important both for its characterization and as a model for other carbon materials. Despite great recent interest, the intrinsic photoemission of its single layer has not been unambiguously measured, nor is the layer-dependence in free-standing multilayers accurately determined. We combine scanning transmission electron microscopy and Raman spectroscopy with synchrotron-based scanning photoelectron microscopy to characterize the same areas of suspended graphene samples down to the atomic level. This allows us to assign spectral signals to regions of precisely known layer number and purity. The core level binding energy of the monolayer is measured at 284.70 eV, thus 0.28 eV higher than that of graphite, with intermediate values found for few layers. This trend is reproduced by density functional theory with or without explicit van der Waals interactions, indicating that intralayer charge rearrangement dominates, but in our model of static screening the magnitudes of the shifts are underestimated by half.
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Submitted 31 July, 2018;
originally announced July 2018.
