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Physics-integrated Neural Network for Quantum Transport Prediction of Field-effect Transistor
Authors:
Xiuying Zhang,
Linqiang Xu,
Jing Lu,
Zhaofu Zhang,
Lei Shen
Abstract:
Quantum-mechanics-based transport simulation is of importance for the design of ultra-short channel field-effect transistors (FETs) with its capability of understanding the physical mechanism, while facing the primary challenge of the high computational intensity. Traditional machine learning is expected to accelerate the optimization of FET design, yet its application in this field is limited by…
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Quantum-mechanics-based transport simulation is of importance for the design of ultra-short channel field-effect transistors (FETs) with its capability of understanding the physical mechanism, while facing the primary challenge of the high computational intensity. Traditional machine learning is expected to accelerate the optimization of FET design, yet its application in this field is limited by the lack of both high-fidelity datasets and the integration of physical knowledge. Here, we introduced a physics-integrated neural network framework to predict the transport curves of sub-5-nm gate-all-around (GAA) FETs using an in-house developed high-fidelity database. The transport curves in the database are collected from literature and our first-principles calculations. Beyond silicon, we included indium arsenide, indium phosphide, and selenium nanowires with different structural phases as the FET channel materials. Then, we built a physical-knowledge-integrated hyper vector neural network (PHVNN), in which five new physical features were added into the inputs for prediction transport characteristics, achieving a sufficiently low mean absolute error of 0.39. In particular, ~98% of the current prediction residuals are within one order of magnitude. Using PHVNN, we efficiently screened out the symmetric p-type GAA FETs that possess the same figures of merit with the n-type ones, which are crucial for the fabrication of homogeneous CMOS circuits. Finally, our automatic differentiation analysis provides interpretable insights into the PHVNN, which highlights the important contributions of our new input parameters and improves the reliability of PHVNN. Our approach provides an effective method for rapidly screening appropriate GAA FETs with the prospect of accelerating the design process of next-generation electronic devices.
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Submitted 30 August, 2024;
originally announced August 2024.
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Nanoscale Surfactant Transport: Bridging Molecular and Continuum Models
Authors:
Muhammad Rizwanur Rahman,
James P. Ewen,
Li Shen,
D. M. Heyes,
Daniele Dini,
E. R. Smith
Abstract:
Surfactant transport is central to a diverse range of natural phenomena, and for many practical applications in physics and engineering. Surprisingly, this process remains relatively poorly understood at the molecular scale. This study investigates the mechanism behind the transport of surfactant monolayers on flat and curved liquid vapor interfaces using nonequilibrium molecular dynamics simulati…
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Surfactant transport is central to a diverse range of natural phenomena, and for many practical applications in physics and engineering. Surprisingly, this process remains relatively poorly understood at the molecular scale. This study investigates the mechanism behind the transport of surfactant monolayers on flat and curved liquid vapor interfaces using nonequilibrium molecular dynamics simulations, which are compared with the continuum transport model. This approach not only provides fresh molecular level insight into surfactant dynamics, but also confirms the nanoscale mechanism of the lateral migration of surfactant molecules along a thin film that continuously deforms as surfactants spread. By connecting the continuum model where the long wave approximations prevail, to the molecular details where such approximations break down, we establish that the transport equation preserves substantial accuracy in capturing the underlying physics. Moreover, the relative importance of the different mechanisms of the transport process are identified. Consequently, we derive a novel, exact molecular equation for surfactant transport along a deforming surface. Finally, our findings demonstrate that the spreading of surfactants at the molecular scale adheres to expected scaling laws and aligns well with experimental observations.
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Submitted 10 August, 2024;
originally announced August 2024.
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Magnetic Bimeron Traveling on the Domain Wall
Authors:
Jiwen Chen,
Laichuan Shen,
Hongyu An,
Xichao Zhang,
Hua Zhang,
Haifeng Du,
Xiaoguang Li,
Yan Zhou
Abstract:
Domain wall bimerons (DWBMs) are nanoscale spin textures residing within the magnetic domain walls of in-plane magnets. In this study, we employ both numerical and analytical methods to explore the stabilization of Néel-type domain wall bimerons and their dynamics when excited by spin-orbit torque. Our findings reveal two unique and intriguing dynamic mechanisms, which depend on the polarization d…
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Domain wall bimerons (DWBMs) are nanoscale spin textures residing within the magnetic domain walls of in-plane magnets. In this study, we employ both numerical and analytical methods to explore the stabilization of Néel-type domain wall bimerons and their dynamics when excited by spin-orbit torque. Our findings reveal two unique and intriguing dynamic mechanisms, which depend on the polarization direction of the spin current: In the first scenario, the magnetic domain wall serves as a track that confines the motion of the bimeron and effectively suppresses the skyrmion Hall effect. In the second scenario, pushing the magnetic domain wall triggers a rapid sliding of the bimeron along the wall. This process significantly enhances the dynamics of the bimeron, resulting in a velocity increase of approximately 40 times compared to skyrmions and bimeron solitons. Our results highlight the potential advantages of the skyrmion Hall effect in developing energy-efficient spintronic devices based on domain wall bimerons.
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Submitted 6 May, 2024; v1 submitted 24 April, 2024;
originally announced April 2024.
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Proximity-Induced Exchange Interaction: a New Pathway for Quantum Sensing using Spin Centers in Hexagonal Boron Nitride
Authors:
Lingnan Shen,
Di Xiao,
Ting Cao
Abstract:
Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have raised wide range interest for its potential in various quantum applications. Due to hBN's 2D nature, spin center in hBN can be engineered in close proximity to target material, providing advantages over their 3D counterparts, such as nitrogen-vacancy (NV) center in diamond. Here we propose a novel quantum sen…
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Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have raised wide range interest for its potential in various quantum applications. Due to hBN's 2D nature, spin center in hBN can be engineered in close proximity to target material, providing advantages over their 3D counterparts, such as nitrogen-vacancy (NV) center in diamond. Here we propose a novel quantum sensing protocol driven by exchange interaction between spin center in hBN and the underlying magnetic substrate induced by magnetic proximity effect. By first-principle calculation, we demonstrate the induced exchange interaction dominates over dipole-dipole interaction by orders of magnitude when in proximity. The interaction remains antiferromagnetic across all stacking configuration between the spin center in hBN and the target van der Waals magnets. Additionally, we explored the scaling behavior of the exchange field as a function of the spatial separation between the spin center and the targets.
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Submitted 8 April, 2024;
originally announced April 2024.
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Scalable Crystal Structure Relaxation Using an Iteration-Free Deep Generative Model with Uncertainty Quantification
Authors:
Ziduo Yang,
Yi-Ming Zhao,
Xian Wang,
Xiaoqing Liu,
Xiuying Zhang,
Yifan Li,
Qiujie Lv,
Calvin Yu-Chian Chen,
Lei Shen
Abstract:
In computational molecular and materials science, determining equilibrium structures is the crucial first step for accurate subsequent property calculations. However, the recent discovery of millions of new crystals and complex twisted structures has challenged traditional computational methods, both ab initio and machine-learning-based, due to their computationally intensive iterative processes.…
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In computational molecular and materials science, determining equilibrium structures is the crucial first step for accurate subsequent property calculations. However, the recent discovery of millions of new crystals and complex twisted structures has challenged traditional computational methods, both ab initio and machine-learning-based, due to their computationally intensive iterative processes. To address these scalability issues, here we introduce DeepRelax, a deep generative model capable of performing geometric crystal structure relaxation rapidly and without iterations. DeepRelax learns the equilibrium structural distribution, enabling it to predict relaxed structures directly from their unrelaxed ones. The ability to perform structural relaxation at the millisecond level per structure, combined with the scalability of parallel processing, makes DeepRelax particularly useful for large-scale virtual screening. We demonstrate DeepRelax's reliability and robustness by applying it to five diverse databases, including oxides, Materials Project, two-dimensional materials, van der Waals crystals, and crystals with point defects. DeepRelax consistently shows high accuracy and efficiency, validated by density functional theory calculations. Finally, we enhance its trustworthiness by integrating uncertainty quantification. This work significantly accelerates computational workflows, offering a robust and trustworthy machine-learning method for material discovery and advancing the application of AI for science. Code for DeepRelax is available at https://github.com/Shen-Group/DeepRelax.
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Submitted 2 September, 2024; v1 submitted 31 March, 2024;
originally announced April 2024.
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Topological skyrmions in monolayer multiferroic MoPtGe2S6
Authors:
Zuxin Fu,
Kuanrong Hao,
Min Guo,
Jingjing He,
Xiaohong Yan,
Yangbo Zhou,
Lei Shen,
Jiaren Yuan
Abstract:
Two-dimensional (2D) multiferroic materials with coexisting ferroelectricity and ferromagnetism have garnered substantial attention for their intriguing physical properties and diverse promising applications in spintronics. For example, multiferroic materials with electronically controlled broken central symmetry provide a versatile platform for designing and manipulating topological skyrmions and…
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Two-dimensional (2D) multiferroic materials with coexisting ferroelectricity and ferromagnetism have garnered substantial attention for their intriguing physical properties and diverse promising applications in spintronics. For example, multiferroic materials with electronically controlled broken central symmetry provide a versatile platform for designing and manipulating topological skyrmions and diverse spintronic applications. Here, we investigate the complex magnetic properties of room-temerature multiferroic material MoPtGe2S6 and its electrical control of topological skyrmions using first-principles calculations and atomistic micromagnetic simulations. A sizable Dzyaloshinskii-Moriya interaction (DMI) (2.1 meV) is found in the multiferroic material MoPtGe2S6 with an electrically polarized ground state. The magnetic skyrmions can be stabilized in monolayer MoPtGe2S6 under zero magnetic field, and the chirality of skyrmions can be reversed with electric field-induced flipping of electrical polarization due to the reversed chirality of the DMI. Furthermore, an external magnetic fielc can reverse the magnetization direction and topological charge of the skyrmions as well as tune the size of skyrmions. These results demonstrate that the monolayer MoPtGe2S6 can enrich the 2D skyrmion community and pave the way for electronically controlled spintronic devices.
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Submitted 24 February, 2024;
originally announced February 2024.
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Local environment-based machine learning for molecular adsorption energy prediction
Authors:
Yifan Li,
Yihan Wu,
Yuhang Han,
Qujie Lyu,
Hao Wu,
Xiuying Zhang,
Lei Shen
Abstract:
Most machine learning (ML) models in Materials Science are developed by global geometric features, often falling short in describing localized characteristics, like molecular adsorption on materials. In this study, we introduce a local environment framework that extracts local features from crystal structures to portray the environment surrounding specific adsorption sites. Upon OC20 database (~20…
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Most machine learning (ML) models in Materials Science are developed by global geometric features, often falling short in describing localized characteristics, like molecular adsorption on materials. In this study, we introduce a local environment framework that extracts local features from crystal structures to portray the environment surrounding specific adsorption sites. Upon OC20 database (~20,000 3D entries), we apply our local environment framework on several ML models, such as random forest, convolutional neural network, and graph neural network. It is found that our framework achieves remarkable prediction accuracy in predicting molecular adsorption energy, significantly outperforming other examined global-environment-based models. Moreover, the employment of this framework reduces data requirements and augments computational speed, specifically for deep learning algorithms. Finally, we directly apply our Local Environment ResNet (LERN) on a small 2DMatPedia database (~2,000 2D entries), which also achieves highly accurate prediction, demonstrating the model transferability and remarkable data efficiency. Overall, the prediction accuracy, data-utilization efficiency, and transferability of our local-environment-based ML framework hold a promising high applicability across a broad molecular adsorption field, such as catalysis and sensor technologies.
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Submitted 19 November, 2023;
originally announced November 2023.
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3D Heisenberg universality in the Van der Waals antiferromagnet NiPS$_3$
Authors:
Rajan Plumley,
Sougata Mardanya,
Cheng Peng,
Johannes Nokelainen,
Tadesse Assefa,
Lingjia Shen,
Nicholas Burdet,
Zach Porter,
Alexander Petsch,
Aidan Israelski,
Hongwei Chen,
Jun Sik Lee,
Sophie Morley,
Sujoy Roy,
Gilberto Fabbris,
Elizabeth Blackburn,
Adrian Feiguin,
Arun Bansil,
Wei-Sheng Lee,
Aaron Lindenberg,
Sugata Chowdhury,
Mike Dunne,
Joshua J. Turner
Abstract:
Van der Waals (vdW) magnetic materials are comprised of layers of atomically thin sheets, making them ideal platforms for studying magnetism at the two-dimensional (2D) limit. These materials are at the center of a host of novel types of experiments, however, there are notably few pathways to directly probe their magnetic structure. We report the magnetic order within a single crystal of NiPS$_3$…
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Van der Waals (vdW) magnetic materials are comprised of layers of atomically thin sheets, making them ideal platforms for studying magnetism at the two-dimensional (2D) limit. These materials are at the center of a host of novel types of experiments, however, there are notably few pathways to directly probe their magnetic structure. We report the magnetic order within a single crystal of NiPS$_3$ and show it can be accessed with resonant elastic X-ray diffraction along the edge of the vdW planes in a carefully grown crystal by detecting structurally forbidden resonant magnetic X-ray scattering. We find the magnetic order parameter has a critical exponent of $β\sim0.36$, indicating that the magnetism of these vdW crystals is more adequately characterized by the three-dimensional (3D) Heisenberg universality class. We verify these findings with first-principle density functional theory, Monte-Carlo simulations, and density matrix renormalization group calculations.
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Submitted 22 April, 2024; v1 submitted 11 October, 2023;
originally announced October 2023.
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Van der Waals Spin-Orbit Torque Antiferromagnetic Memory
Authors:
Lishu Zhang,
Zhengping Yuan,
Jie Yang,
Jun Zhou,
Yanyan Jiang,
Hui Li,
Yongqing Cai,
Yuan Ping Feng,
Zhifeng Zhu,
Lei Shen
Abstract:
The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from the metallic layer, broken symmetry for enabling antidamping switching, spin scattering caused by interfacial defects, and sensitivity to stray magnetic fields…
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The technique of conventional ferromagnet/heavy-metal spin-orbit torque (SOT) offers significant potential for enhancing the efficiency of magnetic memories. However, it faces fundamental physical limitations, including hunting effects from the metallic layer, broken symmetry for enabling antidamping switching, spin scattering caused by interfacial defects, and sensitivity to stray magnetic fields. To address these issues, we here propose a van der Waals (vdW) field-free SOT antiferromagnetic memory using a vdW bilayer LaBr$_2$ (an antiferromagnet with perpendicular magnetic anisotropy) and a monolayer T$_d$ phase WTe$_2$ (a Weyl semimetal with broken inversion symmetry). By systematically employing density functional theory in conjunction with non-equilibrium Green's function methods and macrospin simulations, we demonstrate that the proposed vdW SOT devices exhibit remarkably low critical current density approximately 10 MA/cm$^2$ and rapid field-free magnetization switching in 250 ps. This facilitates excellent write performance with extremely low energy consumption. Furthermore, the device shows a significantly low read error rate, as evidenced by a high tunnel magnetoresistance ratio of up to 4250%. The superior write and read performance originates from the unique strong on-site (insulating phase) and off-site (magnetic phase) Coulomb interactions in electride LaBr$_2$, a large non-zero z-component polarization in WTe$_2$, and the proximity effect between them.
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Submitted 4 October, 2023;
originally announced October 2023.
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Fermi Surface Evolution and Anomalous Hall Effect in an Ideal Type-II Weyl Semimetal
Authors:
Qianni Jiang,
Johanna C. Palmstrom,
John Singleton,
Shalinee Chikara,
David Graf,
Chong Wang,
Yue Shi,
Paul Malinowski,
Aaron Wang,
Zhong Lin,
Lingnan Shen,
Xiaodong Xu,
Di Xiao,
Jiun-Haw Chu
Abstract:
Weyl semimetals (WSMs) are three-dimensional topological materials that exhibit fascinating properties due to the presence of Weyl nodes in their band structure. However, existing WSMs discovered so far often possess multiple pairs of Weyl nodes, posing a challenge in disentangling the contributions to transport phenomena from different energy bands. To overcome this challenge, we have identified…
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Weyl semimetals (WSMs) are three-dimensional topological materials that exhibit fascinating properties due to the presence of Weyl nodes in their band structure. However, existing WSMs discovered so far often possess multiple pairs of Weyl nodes, posing a challenge in disentangling the contributions to transport phenomena from different energy bands. To overcome this challenge, we have identified field-induced ferromagnetic MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ as an ideal type-II WSM with a single pair of Weyl nodes. By employing a combination of quantum oscillations and high-field Hall measurements, we have resolved the evolution of Fermi-surface sections as the Fermi level is tuned across the charge neutrality point, precisely matching the band structure of an ideal type-II WSM. Furthermore, the anomalous Hall conductivity exhibits a heartbeat-like behavior as the Fermi level is tuned across the Weyl nodes, a unique feature previously predicted for a type-II WSM. Our findings establish MnBi$_{2-x}$Sb$_{x}$Te$_{4}$ as an ideal platform for further investigation into Weyl physics.
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Submitted 14 June, 2023;
originally announced June 2023.
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Ultra-small topological spin textures with size of 1.3nm at above room temperature in Fe78Si9B13 amorphous alloy
Authors:
Weiwei Wu,
Huaping Zhang,
Hong Wang,
Chao Chang,
Hongyu Jiang,
Jinfeng Li,
Zhichao Lv,
Laiquan Shen,
Hanqiu Jiang,
Chunyong He,
Yubin Ke,
Yuhua Su,
Kosuke Hiroi,
Zhendong Fu,
Zi-An Li,
Lin Gu,
Maozhi Li,
Dong Ma,
Haiyang Bai
Abstract:
Topologically protected spin textures, such as skyrmions1,2 and vortices3,4, are robust against perturbations, serving as the building blocks for a range of topological devices5-9. In order to implement these topological devices, it is necessary to find ultra-small topological spin textures at room temperature, because small size implies the higher topological charge density, stronger signal of to…
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Topologically protected spin textures, such as skyrmions1,2 and vortices3,4, are robust against perturbations, serving as the building blocks for a range of topological devices5-9. In order to implement these topological devices, it is necessary to find ultra-small topological spin textures at room temperature, because small size implies the higher topological charge density, stronger signal of topological transport10,11 and the higher memory density or integration for topological quantum devices5-9. However, finding ultra-small topological spin textures at high temperatures is still a great challenge up to now. Here we find ultra-small topological spin textures in Fe78Si9B13 amorphous alloy. We measured a large topological Hall effect (THE) up to above room temperature, indicating the existence of highly densed and ultra-small topological spin textures in the samples. Further measurements by small-angle neutron scattering (SANS) reveal that the average size of ultra-small magnetic texture is around 1.3nm. Our Monte Carlo simulations show that such ultra-small spin texture is topologically equivalent to skyrmions, which originate from competing frustration and Dzyaloshinskii-Moriya interaction12,13 coming from amorphous structure14-17. Taking a single topological spin texture as one bit and ignoring the distance between them, we evaluated the ideal memory density of Fe78Si9B13, which reaches up to 4.44*104 gigabits (43.4 TB) per in2 and is 2 times of the value of GdRu2Si218 at 5K. More important, such high memory density can be obtained at above room temperature, which is 4 orders of magnitude larger than the value of other materials at the same temperature. These findings provide a unique candidate for magnetic memory devices with ultra-high density.
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Submitted 29 May, 2023;
originally announced May 2023.
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On Ultrafast X-ray Methods for Magnetism
Authors:
Rajan Plumley,
Sathya Chitturi,
Cheng Peng,
Tadesse Assefa,
Nicholas Burdet,
Lingjia Shen,
Alex Reid,
Georgi Dakovski,
Matthew Seaberg,
Frank O'Dowd,
Sergio Montoya,
Hongwei Chen,
Alana Okullo,
Sougata Mardanya,
Stephen Kevan,
Peter Fischer,
Eric Fullerton,
Sunil Sinha,
William Colocho,
Alberto Lutman,
Franz-Joseph Decker,
Sujoy Roy,
Jun Fujioka,
Yoshinori Tokura,
Michael P. Minitti
, et al. (14 additional authors not shown)
Abstract:
With the introduction of x-ray free electron laser sources around the world, new scientific approaches for visualizing matter at fundamental length and time-scales have become possible. As it relates to magnetism and "magnetic-type" systems, advanced methods are being developed for studying ultrafast magnetic responses on the time-scales at which they occur. We describe three capabilities which ha…
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With the introduction of x-ray free electron laser sources around the world, new scientific approaches for visualizing matter at fundamental length and time-scales have become possible. As it relates to magnetism and "magnetic-type" systems, advanced methods are being developed for studying ultrafast magnetic responses on the time-scales at which they occur. We describe three capabilities which have the potential to seed new directions in this area and present original results from each: pump-probe x-ray scattering with low energy excitation, x-ray photon fluctuation spectroscopy, and ultrafast diffuse x-ray scattering. By combining these experimental techniques with advanced modeling together with machine learning, we describe how the combination of these domains allows for a new understanding in the field of magnetism. Finally, we give an outlook for future areas of investigation and the newly developed instruments which will take us there.
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Submitted 12 May, 2023;
originally announced May 2023.
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Interplay between atomic fluctuations and charge density waves in La$_{2-x}$Sr$_{x}$CuO$_{4}$
Authors:
L. Shen,
V. Esposito,
N. G. Burdet,
M. Zhu,
A. N. Petsch,
T. P. Croft,
S. P. Collins,
Z. Ren,
F. Westermeier,
M. Sprung,
S. M. Hayden,
J. J. Turner,
E. Blackburn
Abstract:
In the cuprate superconductors, the spatial coherence of the charge density wave (CDW) state grows rapidly below a characteristic temperature $T_\mathrm{CDW}$, the nature of which is debated. We have combined a set of x-ray scattering techniques to study La$_{1.88}$Sr$_{0.12}$CuO$_{4}$ ($T_\mathrm{CDW}$~$\approx$~80\,K) to shed light on this discussion. We observe the emergence of a crystal struct…
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In the cuprate superconductors, the spatial coherence of the charge density wave (CDW) state grows rapidly below a characteristic temperature $T_\mathrm{CDW}$, the nature of which is debated. We have combined a set of x-ray scattering techniques to study La$_{1.88}$Sr$_{0.12}$CuO$_{4}$ ($T_\mathrm{CDW}$~$\approx$~80\,K) to shed light on this discussion. We observe the emergence of a crystal structure, which is consistent with the CDW modulation in symmetry, well above $T_\mathrm{CDW}$. This global structural change also induces strong fluctuations of local atomic disorder in the intermediate temperature region. At $T_\mathrm{CDW}$, the temperature dependence of this structure develops a kink, while the atomic disorder is minimized. We find that the atomic relaxation dynamics cross over from a cooperative to an incoherent response at $T_\mathrm{CDW}$. These results reveal a rich interplay between the CDWs and atomic fluctuations of distinct spatio-temporal scales. For example, the CDW coherence is enhanced on quasi-elastic timescales by incoherent atomic relaxation.
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Submitted 24 April, 2023;
originally announced April 2023.
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Large modulation of thermal transport in 2D semimetal triphosphides by doping-induced electron-phonon coupling
Authors:
Yongchao Rao,
C. Y. Zhao,
Lei Shen,
Shenghong Ju
Abstract:
Recent studies demonstrate that novel 2D triphosphides semiconductors possess high carrier mobility and promising thermoelectric performance, while the carrier transport behaviors in 2D semimetal triphosphides have never been elucidated before. Herein, using the first-principles calculations and Boltzmann transport theory, we reveal that the electron-phonon coupling can be significant and thus gre…
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Recent studies demonstrate that novel 2D triphosphides semiconductors possess high carrier mobility and promising thermoelectric performance, while the carrier transport behaviors in 2D semimetal triphosphides have never been elucidated before. Herein, using the first-principles calculations and Boltzmann transport theory, we reveal that the electron-phonon coupling can be significant and thus greatly inhibits the electron and phonon transport in electron-doped BP3 and CP3. The intrinsic heat transport capacity of flexural acoustic phonon modes in the wrinkle structure is largely suppressed arising from the strong out-of-plane phonon scatterings, leading to the low phonon thermal conductivity of 1.36 and 5.33 W/(mK) for BP3 and CP3 at room temperature, and at high doping level, the enhanced scattering from electron diminishes the phonon thermal conductivity by 71% and 54% for BP3 and CP3, respectively. Instead, electron thermal conductivity shows nonmonotonic variations with the increase of doping concentration, stemming from the competition between electron-phonon scattering rates and electron group velocity. It is worth noting that the heavy-doping effect induced strong scattering from phonon largely suppresses the electron transport and reduces electron thermal conductivity to the magnitude of phonon thermal conductivity. This work sheds light on the electron and phonon transport properties in semimetal triphosphides monolayer and provides an efficient avenue for the modulation of carrier transport by doping-induced electron-phonon coupling effect.
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Submitted 7 March, 2023;
originally announced March 2023.
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Thickness and temperature dependent damping in La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ epitaxial films
Authors:
Yifei Wang,
Xinxin Fan,
Xiaoyu Feng,
Xiaohu Gao,
Yunfei Ke,
Jiguang Yao,
Muhan Guo,
Tao Wang,
Lvkang Shen,
Ming Liu,
Desheng Xue,
Xiaolong Fan
Abstract:
The damping of La0.67Sr0.33MnO3 (LSMO) epitaxial films as a function of thickness at different temperatures was studied. The competition between two scattering types (\r{ho}-like and σ-like) with entirely distinct thickness and temperature dependencies resulted in complicated damping behavior. The behavior of σ-like damping in LSMO films is consistent with the behavior in magnetic metal films. How…
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The damping of La0.67Sr0.33MnO3 (LSMO) epitaxial films as a function of thickness at different temperatures was studied. The competition between two scattering types (\r{ho}-like and σ-like) with entirely distinct thickness and temperature dependencies resulted in complicated damping behavior. The behavior of σ-like damping in LSMO films is consistent with the behavior in magnetic metal films. However, because \r{ho}-like damping is sensitive to the fine electron structure near the Fermi surface, the distortion of the oxygen octahedra controlled by the film thickness is an important factor in controlling the damping. Our study demonstrates that the complexity of damping in LSMO epitaxial films is a consequence of strong-correlation effects, which are characteristic of complex transition-metal oxides.
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Submitted 26 June, 2023; v1 submitted 12 February, 2023;
originally announced February 2023.
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Dynamical criticality of spin-shear coupling in van der Waals antiferromagnets
Authors:
Faran Zhou,
Kyle Hwangbo,
Qi Zhang,
Chong Wang,
Lingnan Shen,
Jiawei Zhang,
Qianni Jiang,
Alfred Zong,
Yifan Su,
Marc Zajac,
Youngjun Ahn,
Donald Walko,
Richard Schaller,
Jiun-Haw Chu,
Nuh Gedik,
Xiaodong Xu,
Di Xiao,
Haidan Wen
Abstract:
The interplay between a multitude of electronic, spin, and lattice degrees of freedom underlies the complex phase diagrams of quantum materials. Layer stacking in van der Waals (vdW) heterostructures is responsible for exotic electronic and magnetic properties, which inspires stacking control of two-dimensional magnetism. Beyond the interplay between stacking order and interlayer magnetism, we dis…
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The interplay between a multitude of electronic, spin, and lattice degrees of freedom underlies the complex phase diagrams of quantum materials. Layer stacking in van der Waals (vdW) heterostructures is responsible for exotic electronic and magnetic properties, which inspires stacking control of two-dimensional magnetism. Beyond the interplay between stacking order and interlayer magnetism, we discover a spin-shear coupling mechanism in which a subtle shear of the atomic layers can have a profound effect on the intralayer magnetic order in a family of vdW antiferromagnets. Using time-resolved x-ray diffraction and optical linear dichroism measurements, interlayer shear is identified as the primary structural degree of freedom that couples with magnetic order. The recovery times of both shear and magnetic order upon optical excitation diverge at the magnetic ordering temperature with the same critical exponent. The time-dependent Ginzburg-Landau theory shows that this concurrent critical slowing down arises from a linear coupling of the interlayer shear to the magnetic order, which is dictated by the broken mirror symmetry intrinsic to the monoclinic stacking. Our results highlight the importance of interlayer shear in ultrafast control of magnetic order via spin-mechanical coupling.
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Submitted 15 November, 2022;
originally announced November 2022.
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Probing superconducting order in overdoped Ca$_{x}$Y$_{1-x}$Ba$_{2}$Cu$_{3}$O$_{7}$ by neutron diffraction measurements of the vortex lattice
Authors:
A. S. Cameron,
E. Campillo,
A. Alshemi,
M. Bartkowiak,
L. Shen,
H. Kawano-Furukawa,
A. T. Holmes,
O. Prokhnenko,
A. Gazizulina,
J. S. White,
R. Cubitt,
N. -J. Steinke,
C. D. Dewhurst,
A. Erb,
E. M. Forgan,
E. Blackburn
Abstract:
We present small angle neutron scattering studies of the magnetic vortex lattice (VL) in Ca$_{0.04}$Y$_{0.96}$Ba$_{2}$Cu$_{3}$O$_{7}$ up to a field of 16.7 T, and Ca$_{0.15}$Y$_{0.85}$Ba$_{2}$Cu$_{3}$O$_{7}$ up to 25 T. We find that the series of vortex lattice structure transitions have shifted down in field relative to those reported for the undoped compound. We attribute this mainly to the weak…
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We present small angle neutron scattering studies of the magnetic vortex lattice (VL) in Ca$_{0.04}$Y$_{0.96}$Ba$_{2}$Cu$_{3}$O$_{7}$ up to a field of 16.7 T, and Ca$_{0.15}$Y$_{0.85}$Ba$_{2}$Cu$_{3}$O$_{7}$ up to 25 T. We find that the series of vortex lattice structure transitions have shifted down in field relative to those reported for the undoped compound. We attribute this mainly to the weakening of the 1-D superconductivity in the Cu-O chains by the disorder introduced by doping. The hole doping by calcium is also expected to alter the Fermi velocity and it reduces the upper critical field of the system. The high-field structure of the vortex lattice is similar to recent measurements on the parent compound in fields of 25~T, which indicates that the fundamental \textit{d}-wave nature of the superconducting gap is unchanged by calcium doping. This is corroborated by the temperature dependence of the VL form factor which also shows the same \textit{d}-wave behaviour as observed in other cuprates. We also find evidence of Pauli paramagnetic effects in the field dependence of the VL form factor.
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Submitted 13 August, 2022;
originally announced August 2022.
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$2^{1296}$ Exponentially Complex Quantum Many-Body Simulation via Scalable Deep Learning Method
Authors:
Xiao Liang,
Mingfan Li,
Qian Xiao,
Hong An,
Lixin He,
Xuncheng Zhao,
Junshi Chen,
Chao Yang,
Fei Wang,
Hong Qian,
Li Shen,
Dongning Jia,
Yongjian Gu,
Xin Liu,
Zhiqiang Wei
Abstract:
For decades, people are developing efficient numerical methods for solving the challenging quantum many-body problem, whose Hilbert space grows exponentially with the size of the problem. However, this journey is far from over, as previous methods all have serious limitations. The recently developed deep learning methods provide a very promising new route to solve the long-standing quantum many-bo…
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For decades, people are developing efficient numerical methods for solving the challenging quantum many-body problem, whose Hilbert space grows exponentially with the size of the problem. However, this journey is far from over, as previous methods all have serious limitations. The recently developed deep learning methods provide a very promising new route to solve the long-standing quantum many-body problems. We report that a deep learning based simulation protocol can achieve the solution with state-of-the-art precision in the Hilbert space as large as $2^{1296}$ for spin system and $3^{144}$ for fermion system , using a HPC-AI hybrid framework on the new Sunway supercomputer. With highly scalability up to 40 million heterogeneous cores, our applications have measured 94% weak scaling efficiency and 72% strong scaling efficiency. The accomplishment of this work opens the door to simulate spin models and Fermion models on unprecedented lattice size with extreme high precision.
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Submitted 16 April, 2022;
originally announced April 2022.
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Elongated Skyrmion as Spin Torque Nano-Oscillator and Magnonic Waveguide
Authors:
Xue Liang,
Laichuan Shen,
Xiangjun Xing,
Yan Zhou
Abstract:
Spin torque nano-oscillator has been extensively studied both theoretically and experimentally in recent decades due to its potential applications in future microwave communication technology and neuromorphic computing. In this work, we present a skyrmion-based spin torque nano-oscillator driven by a spatially uniform direct current, where the skyrmion is confined by two pinning sites. Different f…
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Spin torque nano-oscillator has been extensively studied both theoretically and experimentally in recent decades due to its potential applications in future microwave communication technology and neuromorphic computing. In this work, we present a skyrmion-based spin torque nano-oscillator driven by a spatially uniform direct current, where the skyrmion is confined by two pinning sites. Different from other skyrmion-based oscillators that arise from the circular motion or the breathing mode of a skyrmion, the steady-state oscillatory motions are produced by the periodic deformation of an elongated skyrmion. Through micromagnetic simulations, we find that the oscillation frequency depends on the driving current, the damping constant as well as the characteristics of pinning sites. This nonlinear response to direct current turns out to be universal and can also appear in the case of antiskyrmions, skyrmioniums and domain walls. Furthermore, the elongated skyrmion possesses a rectangle-like domain wall, which could also serve as a magnonic waveguide. Utilizing the propagation of spin waves in this waveguide, we propose a device design of logic gate and demonstrate its performance.
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Submitted 11 January, 2023; v1 submitted 6 March, 2022;
originally announced March 2022.
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Mutual conversion between a magnetic Neel hopfion and a Neel toron
Authors:
Shuang Li,
Jing Xia,
Laichuan Shen,
Xichao Zhang,
Motohiko Ezawa,
Yan Zhou
Abstract:
Three-dimensional (3D) magnetic textures attract great attention from researchers due to their fascinating structures and dynamic behaviors. Magnetic hopfion is a prominent example of 3D magnetic textures. Here, we numerically study the mutual conversion between a Neel-type hopfion and a Neel-type toron under an external magnetic field. We also investigate the excitation modes of hopfions and toro…
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Three-dimensional (3D) magnetic textures attract great attention from researchers due to their fascinating structures and dynamic behaviors. Magnetic hopfion is a prominent example of 3D magnetic textures. Here, we numerically study the mutual conversion between a Neel-type hopfion and a Neel-type toron under an external magnetic field. We also investigate the excitation modes of hopfions and torons in a film with strong perpendicular magnetic anisotropy. It is found that the Neel-type hopfion could be a stable state in the absence of the external magnetic field, and its diameter varies with the out-of-plane magnetic field. The Neel-type hopfion may transform to a Neel-type toron at an out-of-plane magnetic field of about 20 mT, where the cross section structure is a Neel-type skyrmion. The hopfion and toron show different excitation modes in the presence of an in-plane microwave magnetic field. Our results provide a method to realize the conversion between a Neel-type hopfion and a Neel-type toron, which also gives a way to distinguish Bloch-type and Neel-type hopfions.
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Submitted 11 February, 2022;
originally announced February 2022.
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Data-driven discovery of high performance layered van der Waals piezoelectric NbOI2
Authors:
Yaze Wu,
Ibrahim Abdelwahab,
Ki Chang Kwon,
Ivan Verzhbitskiy,
Lin Wang,
Weng Heng Liew,
Kui Yao,
Goki Eda,
Kian Ping Loh,
Lei Shen,
Su Ying Quek
Abstract:
Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical an…
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Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical and mechanical energy. Laser scanning vibrometer studies on bulk and few-layer NbOI2 crystals verify their huge piezoelectric responses, which exceed internal references such as In2Se3 and CuInP2S6. Furthermore, we provide insights into the atomic origins of anti-correlated piezoelectric and ferroelectric responses in NbOX2 (X = Cl, Br, I), based on bond covalency and structural distortions in these materials. Our discovery that NbOI2 has the largest piezoelectric stress coefficients among 2D materials calls for the development of NbOI2-based flexible nanoscale piezoelectric devices.
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Submitted 2 February, 2022;
originally announced February 2022.
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Interpretable learning of voltage for electrode design of multivalent metal-ion batteries
Authors:
Xiuying Zhang,
Jun Zhou,
Jing Lu,
Lei Shen
Abstract:
Deep learning (DL) has indeed emerged as a powerful tool for rapidly and accurately predicting materials properties from big data, such as the design of current commercial Li-ion batteries. However, its practical utility for multivalent metal-ion batteries (MIBs), the most promising future solution of large-scale energy storage, is limited due to the scarce MIB data availability and poor DL model…
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Deep learning (DL) has indeed emerged as a powerful tool for rapidly and accurately predicting materials properties from big data, such as the design of current commercial Li-ion batteries. However, its practical utility for multivalent metal-ion batteries (MIBs), the most promising future solution of large-scale energy storage, is limited due to the scarce MIB data availability and poor DL model interpretability. Here, we develop an interpretable DL model as an effective and accurate method for learning electrode voltages of multivalent MIBs (divalent magnesium, calcium, zinc, and trivalent aluminum) at small dataset limits (150~500). Using the experimental results as validation, our model is much more accurate than machine-learning models which usually are better than DL in the small dataset regime. Besides the high accuracy, our feature-engineering-free DL model is explainable, which automatically extracts the atom covalent radius as the most important feature for the voltage learning by visualizing vectors from the layers of the neural network. The presented model potentially accelerates the design and optimization of multivalent MIB materials with fewer data and less domain-knowledge restriction, and is implemented into a publicly available online tool kit in http://batteries.2dmatpedia.org/ for the battery community.
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Submitted 12 January, 2022;
originally announced January 2022.
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Nonreciprocal dynamics of ferrimagnetic bimerons
Authors:
Laichuan Shen,
Jing Xia,
Zehan Chen,
Xiaoguang Li,
Xichao Zhang,
Oleg A. Tretiakov,
Qiming Shao,
Guoping Zhao,
Xiaoxi Liu,
Motohiko Ezawa,
Yan Zhou
Abstract:
Magnetic bimerons are topologically nontrivial spin textures in in-plane easy-axis magnets, which can be used as particle-like information carriers. Here, we report a theoretical study on the nonreciprocal dynamics of asymmetrical ferrimagnetic (FiM) bimerons induced by spin currents. The FiM bimerons have the ability to move at a speed of kilometers per second and do not show the skyrmion Hall ef…
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Magnetic bimerons are topologically nontrivial spin textures in in-plane easy-axis magnets, which can be used as particle-like information carriers. Here, we report a theoretical study on the nonreciprocal dynamics of asymmetrical ferrimagnetic (FiM) bimerons induced by spin currents. The FiM bimerons have the ability to move at a speed of kilometers per second and do not show the skyrmion Hall effect at the angular momentum compensation point. Our micromagnetic simulations and analytical results demonstrate that spin currents are able to induce the nonreciprocal transport and a drift motion of the FiM bimeron even if the system is at the angular momentum compensation point. By analyzing the current-induced effective fields, we find that the nonreciprocal transport is attributed to the asymmetry of the bimeron structure. Our results are useful for understanding the physics of bimerons in ferrimagnets and may provide guidelines for building bimeron-based spintronic devices.
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Submitted 10 January, 2022;
originally announced January 2022.
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Developing Dipole-scheme Heterojunction Photocatalysts
Authors:
Xu Gao,
Yanqing Shen,
Jiajia Liu,
Lingling Lv,
Min Zhou,
Zhongxiang Zhou,
Yuan Ping Feng,
Lei Shen
Abstract:
The high recombination rate of photogenerated carriers is the bottleneck of photocatalysis, severely limiting the photocatalytic efficiency. Here, we develop a dipole-scheme (D-scheme for short) photocatalytic model and materials realization. The D-scheme heterojunction not only can effectively separate electrons and holes by a large polarization field, but also boosts photocatalytic redox reactio…
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The high recombination rate of photogenerated carriers is the bottleneck of photocatalysis, severely limiting the photocatalytic efficiency. Here, we develop a dipole-scheme (D-scheme for short) photocatalytic model and materials realization. The D-scheme heterojunction not only can effectively separate electrons and holes by a large polarization field, but also boosts photocatalytic redox reactions with large driving photovoltages and without any carrier loss. By means of first-principles and GW calculations, we propose a D-scheme heterojunction prototype with two real polar materials, PtSeTe/LiGaS2. This D-scheme photocatalyst exhibits a high capability of the photogenerated carrier separation and near-infrared light absorption. Moreover, our calculations of the Gibbs free energy imply a high ability of the hydrogen and oxygen evolution reaction by a large driving force. The proposed D-scheme photocatalytic model is generalized and paves a valuable route of significantly improving the photocatalytic efficiency.
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Submitted 11 December, 2021;
originally announced December 2021.
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Protected valley states and generation of valley- and spin-polarized current in monolayer MA2Z4
Authors:
Jiaren Yuan,
Qingyuan Wei,
Minglei Sun,
Xiaohong Yan,
Yongqing Cai,
Lei Shen,
Udo Schwingenschlögl
Abstract:
The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As) family are direct band-gap semiconductors with protected valley states and that circularly polarized infrared light can induce valley-selective inter-band transition…
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The optical selection rules obeyed by two-dimensional materials with spin-valley coupling enable the selective excitation of carriers. We show that six members of the monolayer MA2Z4 (M = Mo and W; A = C, Si, and Ge; Z = N, P, and As) family are direct band-gap semiconductors with protected valley states and that circularly polarized infrared light can induce valley-selective inter-band transitions. Our optovalleytronic device demonstrates a close to 100% valley- and spin-polarized current under in-plane bias and circularly polarized infrared light, which can be exploited to encode, process, and store information.
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Submitted 11 December, 2021;
originally announced December 2021.
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Sliding Ferroelectric Tunnel Junctions
Authors:
Jie Yang,
Jun Zhou,
Jing Lu,
Zhaochu Luo,
Jinbo Yang,
Lei Shen
Abstract:
Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 372, 1458; 2021, 372, 1462), which paves a new way to realize van der Waals (vdW) ferroelectric devices with new functionalities. Here, we develop vdW sliding ferroelectric tunnel junctions (FTJs) using the sliding ferroel…
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Very recently, ferroelectric polarization in staggered bilayer hexagonal boron nitride (BBN) and its novel sliding inversion mechanism was reported experimentally (Science 2021, 372, 1458; 2021, 372, 1462), which paves a new way to realize van der Waals (vdW) ferroelectric devices with new functionalities. Here, we develop vdW sliding ferroelectric tunnel junctions (FTJs) using the sliding ferroelectric BBN unit as ultrathin barriers and explore their transport properties with different ferroelectric states and metal contacts via the first principles. It is found that the electrode/BBN contact electric field quenches the ferroelectricity in the staggered BBN, resulting a very small tunnelling electroresistance (TER). Inserting high-mobility 2D materials between Au and BN can restore the BBN ferroelectricity, reaching a giant TER of ~10,000% in sliding FTJs. We finally investigate the metal-contact and thickness effect on the tunnelling property of sliding FTJs. The giant TER and multiple non-volatile resistance states in vdW sliding FTJs show the promising applications in voltage-controlled nano-memories with ultrahigh storage density.
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Submitted 6 December, 2021;
originally announced December 2021.
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Dynamics of ferrimagnetic skyrmionium driven by spin-orbit torque
Authors:
Xue Liang,
Xichao Zhang,
Laichuan Shen,
Jing Xia,
Motohiko Ezawa,
Xiaoxi Liu,
Yan Zhou
Abstract:
Magnetic skyrmionium is a skyrmion-like spin texture with nanoscale size and high mobility. It is a topologically trivial but dynamically stable structure, which can be used as a non-volatile information carrier for next-generation spintronic storage and computing devices. Here, we study the dynamics of a skyrmionium driven by the spin torque in a ferrimagnetic nanotrack. It is found that the dire…
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Magnetic skyrmionium is a skyrmion-like spin texture with nanoscale size and high mobility. It is a topologically trivial but dynamically stable structure, which can be used as a non-volatile information carrier for next-generation spintronic storage and computing devices. Here, we study the dynamics of a skyrmionium driven by the spin torque in a ferrimagnetic nanotrack. It is found that the direction of motion is jointly determined by the internal configuration of a skyrmionium and the spin polarization vector. Besides, the deformation of a skyrmionium induced by the intrinsic skyrmion Hall effect depends on both the magnitude of the driving force and the net angular momentum. The ferrimagnetic skyrmionium is most robust at the angular momentum compensation point, whose dynamics is quite similar to the skyrmionium in antiferromagnet. The skyrmion Hall effect is perfectly prohibited, where it is possible to observe the position of the skyrmionium by measuring the magnetization. Furthermore, the current-induced dynamics of a ferrimagnetic skyrmionium is compared with that of a ferromagnetic and antiferromagnetic skyrmionium. We also make a comparison between the motion of a ferrimagnetic skyrmionium and a skyrmion. Our results will open a new field of ferrimagnetic skyrmioniums for future development of ferrimagnetic spintronics devices.
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Submitted 22 November, 2021;
originally announced November 2021.
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Epitaxial Growth of Ultraflat Bismuthene with Large Topological Band Inversion Enabled by Substrate-Orbital-Filtering Effect
Authors:
Shuo Sun,
Jing-Yang You,
Sisheng Duan,
Jian Gou,
Yongzheng Luo,
Weinan Lin,
Xu Lian,
Tengyu Jin,
Jiawei Liu,
Yuli Huang,
Yihe Wang,
Andrew T. S. Wee,
Yuan Ping Feng,
Lei Shen,
Jia Lin Zhang,
Jingsheng Chen,
Wei Chen
Abstract:
Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin-orbit couplin…
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Quantum spin Hall (QSH) systems hold promises of low-power-consuming spintronic devices, yet their practical applications are extremely impeded by the small energy gaps. Fabricating QSH materials with large gaps, especially under the guidance of design principles, is essential for both scientific research and practical applications. Here, we demonstrate that large on-site atomic spin-orbit coupling can be directly exploited via the intriguing substrate-orbital-filtering effect to generate large-gap QSH systems and experimentally realized on the epitaxially synthesized ultraflat bismuthene on Ag(111). Theoretical calculations reveal that the underlying substrate selectively filters Bi pz orbitals away from the Fermi level, leading pxy orbitals with nonzero magnetic quantum numbers, resulting in large topological gap of ~1 eV at the K point. The corresponding topological edge states are identified through scanning tunneling spectroscopy combined with density functional theory calculations. Our findings provide general strategies to design large-gap QSH systems and further explore their topology-related physics.
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Submitted 18 December, 2021; v1 submitted 5 October, 2021;
originally announced October 2021.
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Giant enhancement of anomalous Hall effect in Cr modulation-doped non-collinear antiferromagnetic Mn3Sn thin films
Authors:
Xin Chen,
Hang Xie,
Qi Zhang,
Ziyan Luo,
Lei Shen,
Yihong Wu
Abstract:
We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but it significantly enhances the anomalous Hall conductivity, particularly for modulation-doped samples at low temperature. A Hall conductivity as high as 184.8 Ω-1…
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We report on Cr doping effect in Mn3Sn polycrystalline films with both uniform and modulation doping. It is found that Cr doping with low concentration does not cause notable changes to the structural and magnetic properties of Mn3Sn, but it significantly enhances the anomalous Hall conductivity, particularly for modulation-doped samples at low temperature. A Hall conductivity as high as 184.8 Ω-1 cm-1 is obtained for modulation-doped samples at 50 K, in a sharp contrast to vanishingly small values for undoped samples at the same temperature. We attribute the enhancement to the change of Fermi level induced by Cr doping
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Submitted 2 July, 2021;
originally announced July 2021.
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Topological Phase Transition in a Magnetic Weyl Semimetal
Authors:
D. F. Liu,
Q. N. Xu,
E. K. Liu,
J. L. Shen,
C. C. Le,
Y. W. Li,
D. Pei,
A. J. Liang,
P. Dudin,
T. K. Kim,
C. Cacho,
Y. F. Xu,
Y. Sun,
L. X. Yang,
Z. K. Liu,
C. Felser,
S. S. P. Parkin,
Y. L. Chen
Abstract:
Topological Weyl semimetals (TWSs) are exotic crystals possessing emergent relativistic Weyl fermions connected by unique surface Fermi-arcs (SFAs) in their electronic structures. To realize the TWS state, certain symmetry (such as the inversion or time reversal symmetry) must be broken, leading to a topological phase transition (TPT). Despite the great importance in understanding the formation of…
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Topological Weyl semimetals (TWSs) are exotic crystals possessing emergent relativistic Weyl fermions connected by unique surface Fermi-arcs (SFAs) in their electronic structures. To realize the TWS state, certain symmetry (such as the inversion or time reversal symmetry) must be broken, leading to a topological phase transition (TPT). Despite the great importance in understanding the formation of TWSs and their unusual properties, direct observation of such a TPT has been challenging. Here, using a recently discovered magnetic TWS Co3Sn2S2, we were able to systematically study its TPT with detailed temperature dependence of the electronic structures by angle-resolved photoemission spectroscopy. The TPT with drastic band structures evolution was clearly observed across the Curie temperature (TC = 177 K), including the disappearance of the characteristic SFAs and the recombination of the spin-split bands that leads to the annihilation of Weyl points with opposite chirality. These results not only reveal important insights on the interplay between the magnetism and band topology in TWSs, but also provide a new method to control their exotic physical properties.
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Submitted 6 June, 2021;
originally announced June 2021.
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A Snapshot Review -- Fluctuations in Quantum Materials: From Skyrmions to Superconductivity
Authors:
L. Shen,
M. Seaberg,
E. Blackburn,
J. J. Turner
Abstract:
By measuring a linear response function directly, such as the dynamic susceptibility, one can understand fundamental material properties. However, a fresh perspective can be offered by studying fluctuations. This can be related back to the dynamic susceptibility through the fluctuation-dissipation theorem, which relates the fluctuations in a system to its response, an alternate route to access the…
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By measuring a linear response function directly, such as the dynamic susceptibility, one can understand fundamental material properties. However, a fresh perspective can be offered by studying fluctuations. This can be related back to the dynamic susceptibility through the fluctuation-dissipation theorem, which relates the fluctuations in a system to its response, an alternate route to access the physics of a material. Here, we describe a new x-ray tool for material characterization that will offer an opportunity to uncover new physics in quantum materials using this theorem. We provide details of the method and discuss the requisite analysis techniques in order to capitalize on the potential to explore an uncharted region of phase space. This is followed by recent results on a topological chiral magnet, together with a discussion of current work in progress. We provide a perspective on future measurements planned for work in unconventional superconductivity.
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Submitted 3 May, 2021;
originally announced May 2021.
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Effect of acetylene links on electronic and optical properties of semiconducting graphynes
Authors:
Yang Li,
Junhan Wu,
Chunmei Li,
Qiang Wang,
Lei Shen
Abstract:
The family of graphynes, novel two-dimensional semiconductors with various and fascinating chemical and physical properties, has attracted great interest from both science and industry. Currently, the focus of graphynes is on graphdiyne, or graphyne-2. In this work, we systematically study the effect of acetylene, i.e., carbon-carbon triple bond, links on the electronic and optical properties of a…
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The family of graphynes, novel two-dimensional semiconductors with various and fascinating chemical and physical properties, has attracted great interest from both science and industry. Currently, the focus of graphynes is on graphdiyne, or graphyne-2. In this work, we systematically study the effect of acetylene, i.e., carbon-carbon triple bond, links on the electronic and optical properties of a series of graphynes (graphyne-n, where n = 1-5, the number of acetylene bonds) using the ab initio calculations. We find an even-odd pattern, i.e., n = 1, 3, 5 and n = 2, 4 having different features, which has not be discovered in studying graphyne or graphdyine only. It is found that as the number of acetylene bonds increases, the electron effective mass increases continuously in the low energy range because of the flatter conduction band induced by the longer acetylene links. Meanwhile, longer acetylene links result in larger redshift of the imaginary part of the dielectric function, loss function, and extinction coefficient. In this work, we propose an effective method to tune and manipulate both the electronic and optical properties of graphynes for the applications in optoelectronic devices and photo-chemical catalysis.
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Submitted 31 March, 2021;
originally announced March 2021.
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Direct observation of the spin-orbit coupling effect in Magnetic Weyl semimetal Co3Sn2S2
Authors:
D. F. Liu,
E. K. Liu,
Q. N. Xu,
J. L. Shen,
Y. W. Li,
D. Pei,
A. J. Liang,
P. Dudin,
T. K. Kim,
C. Cacho,
Y. F. Xu,
Y. Sun,
L. X. Yang,
Z. K. Liu,
C. Felser,
S. S. P. Parkin,
Y. L. Chen
Abstract:
The spin-orbit coupling (SOC) lifts the band degeneracy that plays a vital role in the search for different topological states, such as topological insulators (TIs) and topological semimetals (TSMs). In TSMs, the SOC can partially gap a degenerate nodal line, leading to the formation of Dirac/Weyl semimetals (DSMs/WSMs). However, such SOC-induced gap structure along the nodal line in TSMs has not…
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The spin-orbit coupling (SOC) lifts the band degeneracy that plays a vital role in the search for different topological states, such as topological insulators (TIs) and topological semimetals (TSMs). In TSMs, the SOC can partially gap a degenerate nodal line, leading to the formation of Dirac/Weyl semimetals (DSMs/WSMs). However, such SOC-induced gap structure along the nodal line in TSMs has not yet been systematically investigated experimentally. Here, we report a direct observation of such gap structure in a magnetic WSM Co3Sn2S2 using high resolution angle-resolved photoemission spectroscopy. Our results not only reveal the existence and importance of the strong SOC effect in the formation of the WSM phase in Co3Sn2S2, but also provide insights for the understanding of its exotic physical properties.
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Submitted 14 March, 2021;
originally announced March 2021.
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Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
Authors:
Lishu Zhang,
Jun Zhou,
Hui Li,
Lei Shen,
Yuan Ping Feng
Abstract:
As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sen…
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As Moore's law is gradually losing its effectiveness, developing alternative high-speed and low-energy-consuming information technology with post-silicon advanced materials is urgently needed. The successful application of tunneling magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) has given rise to a tremendous economic impact on magnetic informatics, including MRAM, radio-frequency sensors, microwave generators and neuromorphic computing networks. The emergence of two-dimensional (2D) materials brings opportunities for MTJs based on 2D materials which have many attractive characters and advantages. Especially, the recently discovered intrinsic 2D ferromagnetic materials with high spin-polarization hold the promise for next-generation nanoscale MTJs. With the development of advanced 2D materials, many efforts on MTJs with 2D materials have been made both theoretically and experimentally. Various 2D materials, such as semi-metallic graphene, insulating h-BN, semiconducting MoS2, magnetic semiconducting CrI3, magnetic metallic Fe3GeTe2 and some other recently emerged 2D materials are discussed as the electrodes and/or central scattering materials of MTJs in this review. We discuss the fundamental and main issues facing MTJs, and review the current progress made with 2D MTJs, briefly comment on work with some specific 2D materials, and highlight how they address the current challenges in MTJs, and finally offer an outlook and perspective of 2D MTJs.
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Submitted 7 February, 2021;
originally announced February 2021.
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Tunable Rashba spin-orbit coupling and its interplay with multiorbital effect and magnetic ordering at oxide interfaces
Authors:
Weilong Kong,
Tong Yang,
Jun Zhou,
Yong Zheng Luo,
Jingsheng Chen,
Lei Shen,
Yong Jiang,
Yuan Ping Feng,
Ming Yang
Abstract:
The complex oxide heterostructures such as LaAlO3/SrTiO3 (LAO/STO) interface are paradigmatic platforms to explore emerging multi-degrees of freedom coupling and the associated exotic phenomena. In this study, we reveal the effects of multiorbital and magnetic ordering on Rashba spin-orbit coupling (SOC) at the LAO/STO (001) interface. Based on first-principles calculations, we show that the Rashb…
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The complex oxide heterostructures such as LaAlO3/SrTiO3 (LAO/STO) interface are paradigmatic platforms to explore emerging multi-degrees of freedom coupling and the associated exotic phenomena. In this study, we reveal the effects of multiorbital and magnetic ordering on Rashba spin-orbit coupling (SOC) at the LAO/STO (001) interface. Based on first-principles calculations, we show that the Rashba spin splitting near the conduction band edge can be tuned substantially by the interfacial insulator-metal transition due to the multiorbital effect of the lowest t_2g bands. We further unravel a competition between Rashba SOC and intrinsic magnetism, in which the Rashba SOC induced spin polarization is suppressed by the interfacial magnetic ordering. These results deepen our understanding of intricate electronic and magnetic reconstruction at the perovskite oxide interfaces and shed light on the engineering of oxide heterostructures for all-oxides-based spintronic devices.
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Submitted 19 January, 2021;
originally announced January 2021.
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Cell dynamics simulations of coupled charge and magnetic phase transformation in correlated oxides
Authors:
Lingnan Shen,
Gia-Wei Chern
Abstract:
We present a comprehensive numerical study on the kinetics of phase transition that is characterized by two non-conserved scalar order parameters coupled by a special linear-quadratic interaction. This particular Ginzburg-Landau theory has been proposed to describe the coupled charge- and magnetic transition in nickelates and the collinear stripe phase in cuprates. The inhomogeneous state of such…
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We present a comprehensive numerical study on the kinetics of phase transition that is characterized by two non-conserved scalar order parameters coupled by a special linear-quadratic interaction. This particular Ginzburg-Landau theory has been proposed to describe the coupled charge- and magnetic transition in nickelates and the collinear stripe phase in cuprates. The inhomogeneous state of such systems at low temperatures consists of magnetic domains separated by quasi-metallic domain-walls where the charge-order is reduced. By performing large-scale cell dynamics simulations, we find a two-stage phase-ordering process in which a short period of independent evolution of the two order parameters is followed by a correlated coarsening process. The long-time growth and coarsening of magnetic domains is shown to follow the Allen-Cahn power law. We further show that the nucleation-and-growth dynamics during phase transformation to the ordered states is well described by the Kolmogorov-Johnson-Mehl-Avrami theory in two dimensions. On the other hand, the presence of quasi-metallic magnetic domain walls in the ordered states gives rise to a very different kinetics for phase transition to the high temperature paramagnetic phase. In this new scenario, the phase transformation is initiated by the decay of magnetic domain walls into two insulator-metal boundaries, which subsequently move away from each other. Implications of our findings to recent nano-imaging experiments on nickelates are also discussed.
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Submitted 26 December, 2020; v1 submitted 13 November, 2020;
originally announced November 2020.
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Signal detection based on the chaotic motion of an antiferromagnetic domain wall
Authors:
Laichuan Shen,
Jing Xia,
Motohiko Ezawa,
Oleg A. Tretiakov,
Guoping Zhao,
Yan Zhou
Abstract:
The antiferromagnetic domain wall dynamics is currently a hot topic in mesoscopic magnetic systems. In this work, it is found that, based on the Thiele approach, the motion of an antiferromagnetic domain wall is described by the Duffing equation. Numerical simulations demonstrate that the antiferromagnetic domain wall can be used as a Duffing oscillator, and the transition between the periodic and…
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The antiferromagnetic domain wall dynamics is currently a hot topic in mesoscopic magnetic systems. In this work, it is found that, based on the Thiele approach, the motion of an antiferromagnetic domain wall is described by the Duffing equation. Numerical simulations demonstrate that the antiferromagnetic domain wall can be used as a Duffing oscillator, and the transition between the periodic and chaotic motion can be used to detect the periodic signal in the presence of the white noise. Furthermore, we calculate the bifurcation diagram and Lyapunov exponents to study the chaotic behavior of an antiferromagnetic domain wall. The numerical simulations are in good agreement with the analytical solutions. Our results may be useful for building spintronic detection devices based on antiferromagnetic domain walls.
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Submitted 3 November, 2020;
originally announced November 2020.
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Linear magnetization dependence and large intrinsic anomalous Hall effect in Fe78Si9B13 metallic glasses
Authors:
Weiwei Wu,
Jinfeng Li,
Zhiyu Liao,
Hongyu Jiang,
Laiquan Shen,
Lin Gu,
Xianggang Qiu,
Yugui Yao,
Haiyang Bai
Abstract:
The origin of anomalous Hall effect (AHE) in ferromagnetic metallic glasses (MGs) is not yet understood completely. Here, the AHE is explored in Fe78Si9B13 MGs. We find the behavior of resistivity at low temperature seems to be more likely due to structure effect rather than Kondo-type effect. More importantly, we firstly find the primitive experiment anomalous Hall conductivity (σAH) without sepa…
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The origin of anomalous Hall effect (AHE) in ferromagnetic metallic glasses (MGs) is not yet understood completely. Here, the AHE is explored in Fe78Si9B13 MGs. We find the behavior of resistivity at low temperature seems to be more likely due to structure effect rather than Kondo-type effect. More importantly, we firstly find the primitive experiment anomalous Hall conductivity (σAH) without separation of extrinsic contribution has a linear magnetization (Mz) dependence when temperature is changing, which is another feature of intrinsic mechanism and indicates intrinsic contribution is dominated. Furthermore, the σAH normalized by Mz is independent of longitudinal conductivity (σxx), which shows the characteristic of dissipationless intrinsic mechanism. We suggest the intrinsic contribution can be understood from the density of Berry curvature integrated over occupied energies proposed for aperiodic materials recently, and the linear magnetization dependence can be understood qualitatively from the fluctuations of spin orientation and the proportional relationship between Berry curvature and magnetization. Moreover, based on the recent theory report of topological amorphous metals, we make a prediction that the large intrinsic σAH (616 S/cm) in Fe78Si9B13 MGs implies some topological properties of MGs waiting for further discovery.
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Submitted 14 August, 2021; v1 submitted 2 October, 2020;
originally announced October 2020.
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Dynamics of ferromagnetic bimerons driven by spin currents and magnetic fields
Authors:
Laichuan Shen,
Xiaoguang Li,
Jing Xia,
Lei Qiu,
Xichao Zhang,
Oleg A. Tretiakov,
Motohiko Ezawa,
Yan Zhou
Abstract:
Magnetic bimeron composed of two merons is a topological counterpart of magnetic skyrmion in in-plane magnets, which can be used as the nonvolatile information carrier in spintronic devices. Here we analytically and numerically study the dynamics of ferromagnetic bimerons driven by spin currents and magnetic fields. Numerical simulations demonstrate that two bimerons with opposite signs of topolog…
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Magnetic bimeron composed of two merons is a topological counterpart of magnetic skyrmion in in-plane magnets, which can be used as the nonvolatile information carrier in spintronic devices. Here we analytically and numerically study the dynamics of ferromagnetic bimerons driven by spin currents and magnetic fields. Numerical simulations demonstrate that two bimerons with opposite signs of topological numbers can be created simultaneously in a ferromagnetic thin film via current-induced spin torques. The current-induced spin torques can also drive the bimeron and its speed is analytically derived, which agrees with the numerical results. Since the bimerons with opposite topological numbers can coexist and have opposite drift directions, two-lane racetracks can be built in order to accurately encode the data bits. In addition, the dynamics of bimerons induced by magnetic field gradients and alternating magnetic fields are investigated. It is found that the bimeron driven by alternating magnetic fields can propagate along a certain direction. Moreover, combining a suitable magnetic field gradient, the Magnus-force-induced transverse motion can be completely suppressed, which implies that there is no skyrmion Hall effect. Our results are useful for understanding of the bimeron dynamics and may provide guidelines for building future bimeron-based spintronic devices.
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Submitted 29 July, 2020; v1 submitted 25 May, 2020;
originally announced May 2020.
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Origin and Large Enhancement of Large Spin Hall Angle in Weyl Semimetals LaAl$X$ ($X$=Si, Ge)
Authors:
Truman Ng,
Yongzheng Luo,
Jiaren Yuan,
Yihong Wu,
Hyunsoo Yang,
Lei Shen
Abstract:
We study the origin of the strong spin Hall effect (SHE) in a recently discovered family of Weyl semimetals, LaAl$X$ ($X$=Si, Ge) via a first-principles approach with maximally localized Wannier functions. We show that the strong intrinsic SHE in LaAl$X$ originates from the multiple slight anticrossings of nodal lines and points near $E_F$ due to their high mirror symmetry and large spin-orbit int…
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We study the origin of the strong spin Hall effect (SHE) in a recently discovered family of Weyl semimetals, LaAl$X$ ($X$=Si, Ge) via a first-principles approach with maximally localized Wannier functions. We show that the strong intrinsic SHE in LaAl$X$ originates from the multiple slight anticrossings of nodal lines and points near $E_F$ due to their high mirror symmetry and large spin-orbit interaction. It is further found that both electrical and thermal means can enhance the spin Hall conductivity ($σ_{SH}$). However, the former also increases the electrical conductivity ($σ_{c}$), while the latter decreases it. As a result, the independent tuning of $σ_{SH}$ and $σ_{c}$ by thermal means can enhance the spin Hall angle (proportional to $\frac{σ_{SH}}{σ_{c}}$), a figure of merit of charge-to-spin current interconversion of spin-orbit torque devices. The underlying physics of such independent changes of the spin Hall and electrical conductivity by thermal means is revealed through the band-resolved and $k$-resolved spin Berry curvature. Our finding offers a new way in the search of high SHA materials for room-temperature spin-orbitronics applications.
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Submitted 31 March, 2021; v1 submitted 12 May, 2020;
originally announced May 2020.
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Interfacial-hybridization-modified Ir Ferromagnetism and Electronic Structure in LaMnO$_3$/SrIrO$_3$ Superlattices
Authors:
Yujun Zhang,
Yong Zheng Luo,
Liang Wu,
Motohiro Suzuki,
Yasuyuki Hirata,
Kohei Yamagami,
Kou Takubo,
Keisuke Ikeda,
Kohei Yamamoto,
Akira Yasui,
Naomi Kawamura,
Chun Lin,
Keisuke Koshiishi,
Xin Liu,
Jinxing Zhang,
Yasushi Hotta,
X. Renshaw Wang,
Atsushi Fujimori,
Yuanhua Lin,
Cewen Nan,
Lei Shen,
Hiroki Wadati
Abstract:
Artificially fabricated 3$d$/5$d$ superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3$d$-5$d$ coupling, whose mechanism remains mostly unexplored. In this work we investigated the mechanism of interfacial coupling in LaMnO$_3$/SrIrO$_3$ SLs by several spectroscopic approaches. Hard x-ray absorption, magnetic circular dichro…
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Artificially fabricated 3$d$/5$d$ superlattices (SLs) involve both strong electron correlation and spin-orbit coupling in one material by means of interfacial 3$d$-5$d$ coupling, whose mechanism remains mostly unexplored. In this work we investigated the mechanism of interfacial coupling in LaMnO$_3$/SrIrO$_3$ SLs by several spectroscopic approaches. Hard x-ray absorption, magnetic circular dichroism and photoemission spectra evidence the systematic change of the Ir ferromagnetism and the electronic structure with the change of the SL repetition period. First-principles calculations further reveal the mechanism of the SL-period dependence of the interfacial electronic structure and the local properties of the Ir moments, confirming that the formation of Ir-Mn molecular orbital is responsible for the interfacial coupling effects. The SL-period dependence of the ratio between spin and orbital components of the Ir magnetic moments can be attributed to the realignment of electron spin during the formation of the interfacial molecular orbital. Our results clarify the nature of interfacial coupling in this prototypical 3$d$/5$d$ SL system and the conclusion will shed light on the study of other strongly correlated and spin-orbit coupled oxide hetero-interfaces.
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Submitted 14 April, 2020;
originally announced April 2020.
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Enhanced charge density wave coherence in a light-quenched, high-temperature superconductor
Authors:
S. Wandel,
F. Boschini,
E. H. da Silva Neto,
L. Shen,
M. X. Na,
S. Zohar,
Y. Wang,
S. B. Welch,
M. H. Seaberg,
J. D. Koralek,
G. L. Dakovski,
W. Hettel,
M-F. Lin,
S. P. Moeller,
W. F. Schlotter,
A. H. Reid,
M. P. Minitti,
T. Boyle,
F. He,
R. Sutarto,
R. Liang,
D. Bonn,
W. Hardy,
R. A. Kaindl,
D. G. Hawthorn
, et al. (6 additional authors not shown)
Abstract:
Superconductivity and charge density waves (CDW) are competitive, yet coexisting orders in cuprate superconductors. To understand their microscopic interdependence, a probe capable of discerning their interaction on its natural length and time scales is necessary. We use ultrafast resonant soft x-ray scattering to track the transient evolution of CDW correlations in YBa$_{2}$Cu$_{3}$O$_{6+x}$ foll…
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Superconductivity and charge density waves (CDW) are competitive, yet coexisting orders in cuprate superconductors. To understand their microscopic interdependence, a probe capable of discerning their interaction on its natural length and time scales is necessary. We use ultrafast resonant soft x-ray scattering to track the transient evolution of CDW correlations in YBa$_{2}$Cu$_{3}$O$_{6+x}$ following the quench of superconductivity by an infrared laser pulse. We observe a non-thermal response of the CDW order characterized by a near doubling of the correlation length within $\approx$ 1 picosecond of the superconducting quench. Our results are consistent with a model in which the interaction between superconductivity and CDW manifests inhomogeneously through disruption of spatial coherence, with superconductivity playing the dominant role in stabilizing CDW topological defects, such as discommensurations.
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Submitted 26 May, 2022; v1 submitted 9 March, 2020;
originally announced March 2020.
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Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions
Authors:
Xueli Xu,
Hui Zhang,
Zhicheng Zhong,
Ranran zhang,
Lihua Yin,
Yuping Sun,
Haoliang Huang,
Yalin Lu,
Yi Lu,
Chun Zhou,
Zongwei Ma,
Lei Shen,
Junsong Wang,
Jiandong Guo,
Jirong Sun,
Zhigao Sheng
Abstract:
Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs i…
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Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.
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Submitted 6 January, 2020;
originally announced March 2020.
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Bimeron Clusters in Chiral Antiferromagnets
Authors:
X. Li,
L. Shen,
Y. Bai,
J. Wang,
X. Zhang,
J. Xia,
M. Ezawa,
O. A. Tretiakov,
X. Xu,
M. Mruczkiewicz,
M. Krawczyk,
Y. Xu,
R. F. L. Richard,
R. W. Chantrell,
Y. Zhou
Abstract:
A mgnetic bimeron is an in-plane topological counterpart of a magnetic skyrmion. Despite the topological equivalence, their statics and dynamics could be distinct, making them attractive from the perspectives of both physics and spintronic applications. In this work, we investigate an antiferromagnetic (AFM) thin film with interfacial Dzyaloshinskii-Moriya interaction (DMI), and introduce the AFM…
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A mgnetic bimeron is an in-plane topological counterpart of a magnetic skyrmion. Despite the topological equivalence, their statics and dynamics could be distinct, making them attractive from the perspectives of both physics and spintronic applications. In this work, we investigate an antiferromagnetic (AFM) thin film with interfacial Dzyaloshinskii-Moriya interaction (DMI), and introduce the AFM bimeron cluster as a new form of topological quasi-particle. Bimerons demonstrate high current-driven mobility as generic AFM solitons, while featuring anisotropic and relativistic dynamics excited by currents with in-plane and out-of-plane polarizations, respectively. Moreover, these spin textures can absorb other bimeron solitons or clusters along the translational direction to acquire a wide range of Néel topological numbers. The clustering involves the rearrangement of topological structures, and gives rise to remarkable changes in static and dynamical properties. The merits of AFM bimeron clusters reveal a potential path to unify multi-bit data creation, transmission, storage and even topology-based computation within the same material system, and may stimulate innovative spintronic devices enabling new paradigms of data manipulations.
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Submitted 31 August, 2020; v1 submitted 11 February, 2020;
originally announced February 2020.
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Static and dynamic properties of bimerons in a frustrated ferromagnetic monolayer
Authors:
Xichao Zhang,
Jing Xia,
Laichuan Shen,
Motohiko Ezawa,
Oleg A. Tretiakov,
Guoping Zhao,
Xiaoxi Liu,
Yan Zhou
Abstract:
Magnetic bimeron is a topological counterpart of skyrmions in in-plane magnets, which can be used as a spintronic information carrier. We report the static properties of bimerons with different topological structures in a frustrated ferromagnetic monolayer, where the bimeron structure is characterized by the vorticity $Q_{\text{v}}$ and helicity $η$. It is found that the bimeron energy increases w…
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Magnetic bimeron is a topological counterpart of skyrmions in in-plane magnets, which can be used as a spintronic information carrier. We report the static properties of bimerons with different topological structures in a frustrated ferromagnetic monolayer, where the bimeron structure is characterized by the vorticity $Q_{\text{v}}$ and helicity $η$. It is found that the bimeron energy increases with $Q_{\text{v}}$, and the energy of an isolated bimeron with $Q_{\text{v}}=\pm 1$ depends on $η$. We also report the dynamics of frustrated bimerons driven by the spin-orbit torques, which depend on the strength of the dampinglike and fieldlike torques. We find that the isolated bimeron with $Q_{\text{v}}=\pm 1$ can be driven into linear or elliptical motion when the spin polarization is perpendicular to the easy axis. We numerically reveal the damping dependence of the bimeron Hall angle driven by the dampinglike torque. Besides, the isolated bimeron with $Q_{\text{v}}=\pm 1$ can be driven into rotation by the dampinglike torque when the spin polarization is parallel to the easy axis. The rotation frequency is proportional to the driving current density. In addition, we numerically demonstrate the possibility of creating a bimeron state with a higher or lower topological charge by the current-driven collision and merging of bimeron states with different $Q_{\text{v}}$. Our results could be useful for understanding the bimeron physics in frustrated magnets.
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Submitted 27 April, 2020; v1 submitted 1 February, 2020;
originally announced February 2020.
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Tailoring magnetic order via atomically stacking 3d/5d electrons
Authors:
Ke Huang,
Liang Wu,
Maoyu Wang,
Nyayabanta Swain,
M. Motapothula,
Yongzheng Luo,
Kun Han,
Mingfeng Chen,
Chen Ye,
Allen Jian Yang,
Huan Xu,
Dong-chen Qi,
Alpha T. N'Diaye,
Christos Panagopoulos,
Daniel Primetzhofer,
Lei Shen,
Pinaki Sengupta,
Jing Ma,
Zhenxing Feng,
Ce-Wen Nan,
X. Renshaw Wang
Abstract:
The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar…
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The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, contributing to future applications.
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Submitted 14 September, 2021; v1 submitted 16 January, 2020;
originally announced January 2020.
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Preserving orbital order in a layered manganite by ultrafast hybridized band excitation
Authors:
L. Shen,
S. Mack,
G. Dakovski,
G. Coslovich,
O. Krupin,
M. Hoffmann,
S-W. Huang,
Y-D. Chuang,
J. A. Johnson,
S. Lieu,
S. Zohar,
C. Ford,
M. Kozina,
W. Schlotter,
M. P. Minitti,
J. Fujioka,
R. Moore,
W-S. Lee,
Z. Hussain,
Y. Tokura,
P. Littlewood,
J. J. Turner
Abstract:
In the mixed-valence manganites, a near-infrared laser typically melts the orbital and spin order simultaneously, corresponding to the photoinduced $d^{1}d^{0}$ $\xrightarrow{}$ $d^{0}d^{1}$ excitations in the Mott-Hubbard bands of manganese. Here, we use ultrafast methods -- both femtosecond resonant x-ray diffraction and optical reflectivity -- to demonstrate that the orbital response in the lay…
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In the mixed-valence manganites, a near-infrared laser typically melts the orbital and spin order simultaneously, corresponding to the photoinduced $d^{1}d^{0}$ $\xrightarrow{}$ $d^{0}d^{1}$ excitations in the Mott-Hubbard bands of manganese. Here, we use ultrafast methods -- both femtosecond resonant x-ray diffraction and optical reflectivity -- to demonstrate that the orbital response in the layered manganite Nd$_{1-x}$Sr$_{1+x}$MnO$_{4}$ ($\it{x}$ = 2/3) does not follow this scheme. At the photoexcitation saturation fluence, the orbital order is only diminished by a few percent in the transient state. Instead of the typical $d^{1}d^{0}$ $\xrightarrow{}$ $d^{0}d^{1}$ transition, a near-infrared pump in this compound promotes a fundamentally distinct mechanism of charge transfer, the $d^{0}$ $ \xrightarrow{}$ $d^{1}L$, where $\it{L}$ denotes a hole in the oxygen band. This novel finding may pave a new avenue for selectively manipulating specific types of order in complex materials of this class.
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Submitted 21 December, 2019;
originally announced December 2019.
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Spectral, statistical and vertex functions in scalar quantum field theory far from equilibrium
Authors:
Linda Shen,
Jürgen Berges
Abstract:
We compute the far-from-equilibrium dynamics of relativistic scalar quantum fields in 3+1 space-time dimensions starting from over-occupied initial conditions. We determine universal scaling exponents and functions for two-point correlators and the four-vertex in a self-similar regime in time and space or momenta. The scaling form of the momentum-dependent four-vertex exhibits a dramatic fall-off…
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We compute the far-from-equilibrium dynamics of relativistic scalar quantum fields in 3+1 space-time dimensions starting from over-occupied initial conditions. We determine universal scaling exponents and functions for two-point correlators and the four-vertex in a self-similar regime in time and space or momenta. The scaling form of the momentum-dependent four-vertex exhibits a dramatic fall-off towards low momenta. Comparing spectral functions (commutators) and statistical correlations (anti-commutators) of field operators allows us to detect strong violations of the fluctuation-dissipation relation in this non-perturbative infrared regime. Based on a self-consistent expansion in the number of field components to next-to-leading order, a wide range of interaction strengths is analyzed and compared to weak-coupling estimates in effective kinetic theory and classical-statistical field theory.
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Submitted 16 December, 2019;
originally announced December 2019.
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Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties
Authors:
Jiating Lu,
Xi Zhang,
Limeng Shen,
Ya Nie,
Gang Xiang
Abstract:
Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were investigated using phonon spectra, and an infinite miscibility between Si and Ge elements were revealed in the 2D honeycomb structures. The simulated scanning tunn…
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Si-Ge monolayers (SiGeM) with different elementary proportion x (0<x<1) were systematically studied for the first-time using ab initio calculations in this work. The structural stabilities of the Si1-xGexM with different symmetries were investigated using phonon spectra, and an infinite miscibility between Si and Ge elements were revealed in the 2D honeycomb structures. The simulated scanning tunneling microscope images and Raman and infrared active modes of the Si1-xGexM were then obtained for structural characterizations. Interestingly, the study of electronic properties revealed not previously reported oscillatory nonlinear dependence of band gap values on the elementary proportion x in the Si1-xGexM, which suggests an alternative way for tuning the band gaps of 2D materials. Additionally, low effective masses (0.008m0 ~ 0.021m0) of the carriers in the semiconducting Si1-xGexM were found, which has potentials for high-speed applications. Considering the advantage of their compatibility with current Si-based technology and the trend of miniature of electronic devices, the Si1-xGexM with stable structures and excellent properties would be important for 2D applications based on group IV materials.
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Submitted 6 April, 2020; v1 submitted 12 November, 2019;
originally announced November 2019.
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Magnetoplasmons in monolayer black phosphorus structures
Authors:
Yun You,
P. A. D. Gonçalves,
Linfang Shen,
Martijn Wubs,
Xiaohua Deng,
Sanshui Xiao
Abstract:
Two-dimensional materials supporting deep-subwavelength plasmonic modes can also exhibit strong magneto-optical responses. Here, we theoretically investigate magnetoplasmons (MPs) in monolayer black phosphorus (BP) structures under moderate static magnetic fields. We consider three different structures, namely, a continuous BP monolayer, an edge formed by a semi-infinite sheet, and finally, a tria…
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Two-dimensional materials supporting deep-subwavelength plasmonic modes can also exhibit strong magneto-optical responses. Here, we theoretically investigate magnetoplasmons (MPs) in monolayer black phosphorus (BP) structures under moderate static magnetic fields. We consider three different structures, namely, a continuous BP monolayer, an edge formed by a semi-infinite sheet, and finally, a triangular wedge configuration. Each of these structures shows strongly anisotropic magneto-optical responses induced both by the external magnetic field and by the intrinsic anisotropy of the BP lattice. Starting from the magneto-optical conductivity of a single-layer of BP, we derive the dispersion relation of the MPs in the considered geometries, using a combination of analytical, semi-analytical, and numerical methods. We fully characterize the MP dispersions and the properties of the corresponding field distributions, and we show that these structures sustain strongly anisotropic subwavelength modes that are highly tunable. Our results demonstrate that MPs in monolayer BP, with its inherent lattice anisotropy as well as magnetically induced anisotropy, hold potential for tunable anisotropic materials operating below the diffraction limit, thereby paving the way for tailored nanophotonic devices at the nanoscale.
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Submitted 31 October, 2019;
originally announced October 2019.