Showing 1–50 of 56 results for author: Han, K

Local Manipulation of Skyrmion Lattice in Fe3GaTe2 at Room Temperature

Authors: Shuaizhao Jin, Zhan Wang, Shouzhe Dong, Yiting Wang, Kun Han, Guangcheng Wang, Zunyi Deng, Xingan Jiang, Ying Zhang, Houbing Huang, Jiawang Hong, Xiaolei Wang, Tianlong Xia, Sang-Wook Cheong, Xueyun Wang

Abstract: Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intri… ▽ More Motivated by advances in spintronic devices, an extensive exploration is underway to uncover materials that host topologically protected spin textures, exemplified by skyrmions. One critical challenge involved in the potential application of skyrmions in van der Waals (vdW) materials is the attainment and manipulation of skyrmions at room temperature. In this study, we report the creation of intrinsic skyrmion state in van der Waals ferromagnet Fe3GaTe2. By employing variable temperature magnetic force microscopy, the skyrmion lattice can be locally manipulated on Fe3GaTe2 flake. The ordering of skyrmion state is further analyzed. Our result suggest Fe3GaTe2 emerges as a highly promising contender for the realization of skyrmion-based layered spintronic memory devices. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Optical detection of small polarons in vanadium dioxide and their critical role in mediating metal-insulator transition

Authors: Xiongfang Liu, Tong Yang, Jing Wu, Mengxia Sun, Mingyao Chen, Chi Sin Tang, Kun Han, Difan Zhou, Shengwei Zeng, Shuo Sun, Sensen Li, Ming Yang, Mark B. H. Breese, Chuanbing Cai, Thirumalai Venkatesan, Andrew T. S. Wee, Xinmao Yin

Abstract: In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic… ▽ More In the pursuit of advanced photoelectric devices, researchers have uncovered near room-temperature metal-insulator transitions (MIT) in non-volatile VO2. Although theoretical investigations propose that polaron dynamics mediate the MIT, direct experimental evidence remains scarce. In this study, we present direct evidence of the polaron state in insulating VO2 through high-resolution spectroscopic ellipsometry measurements and first-principles calculations. We demonstrate that polaron dynamics play a complementary role in facilitating Peierls and Mott transitions to contribute to the MIT processes. Moreover, our observations and characterizations of conventional metallic and correlated plasmons in the respective phases of the VO2 film provide valuable insights into their electron structures. This study provides an understanding of the MIT mechanism in correlated systems and highlights how polarons, lattice distortions and electron correlations facilitate the phase transition processes in strongly-correlated systems, while further inspiring the development of new device functionalities. △ Less

Submitted 28 December, 2023; originally announced December 2023.

Comments: 24 pages,4 figures,research article

Multifunctional magnetic oxide-MoS$_2$ heterostructures on silicon

Authors: Allen Jian Yang, Liang Wu, Yanran Liu, Xinyu Zhang, Kun Han, Ying Huang, Shengyao Li, Xian Jun Loh, Qiang Zhu, Rui Su, Ce-Wen Nan, X. Renshaw Wang

Abstract: Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), a correlated manganite perovskite, and MoS$_2$ are demonstrated on Si substrates wi… ▽ More Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), a correlated manganite perovskite, and MoS$_2$ are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS$_2$ heterostructures. The LSMO-MoS$_2$ heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS$_2$ heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS$_2$ heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS$_2$ heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties. △ Less

Submitted 11 October, 2023; originally announced October 2023.

Journal ref: Advanced Materials 35, 2302620 (2023)

Competition of electronic correlation and reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures

Authors: Xueyan Wang, Lin Sun, Chen Ye, Zhen Huang, Kun Han, Ke Huang, Allen Jian Yang, Shengwei Zeng, Xian Jun Loh, Qiang Zhu, T. Venkatesan, Ariando Ariando, X. Renshaw Wang

Abstract: Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterost… ▽ More Electronic correlation and reconstruction are two important factors that play a critical role in shaping the magnetic and electronic properties of correlated low-dimensional systems. Here, we report a competition between the electronic correlation and structural reconstruction in La1-xSrxTiO3/SrTiO3 heterostructures by modulating material polarity and interfacial strain, respectively. The heterostructures exhibit a critical thickness (tc) at which a metal-to-insulator transition (MIT) abruptly occurs at certain thickness, accompanied by the coexistence of two- and three-dimensional (2D and 3D) carriers. Intriguingly, the tc exhibits a V-shaped dependence on the doping concentration of Sr, with the smallest tc value at x = 0.5. We attribute this V-shaped dependence to the competition between the electronic reconstruction (modulated by the polarity) and the electronic correlation (modulated by strain), which are borne out by the experimental results, including strain-dependent electronic properties and the evolution of 2D and 3D carriers. Our findings underscore the significance of the interplay between electronic reconstruction and correlation in the realization and utilization of emergent electronic functionalities in low-dimensional correlated systems. △ Less

Submitted 6 October, 2023; originally announced October 2023.

Design and manipulation of high-performance photovoltaic systems based on two-dimensional novel KAgSe/KAgX(X=S,Te) van der Waals heterojunctions

Authors: Keying Han, Qiang Wang, Yan Liang, Defeng Guo, Bin Wang

Abstract: The realization of high-performance two-dimensional (2D) solar photovoltaic systems are both fundamentally intriguing and practically appealing to meet the fast-growing energy requirements. Since the limited application of single 2D crystals in photovoltaic, here we propose a family of 2D KAgSe/KAgX(X=S,Te) van der Waals heterostructures (vdWHs), which are constructed by combining two different KA… ▽ More The realization of high-performance two-dimensional (2D) solar photovoltaic systems are both fundamentally intriguing and practically appealing to meet the fast-growing energy requirements. Since the limited application of single 2D crystals in photovoltaic, here we propose a family of 2D KAgSe/KAgX(X=S,Te) van der Waals heterostructures (vdWHs), which are constructed by combining two different KAgX layers through interlayer vdW interaction. After a systematic study and further regulatory research of these vdWHs based on the first-principles, numerous fascinating characteristics and physical mechanisms are obtained. Firstly, favorable potential applications of these vdWHs in photovoltaics are confirmed in virtue of their desirable optoelectronic properties, such as the robust stabilitis, moderate direct band gaps, type-II band alignments together with superior carrier mobilities, visible optical absorptions, power conversion efficiencys (PCEs) and photocurrents in their based photovoltaic devices. More importantly, when under varying vertical electric field Ez, a phase transition of band alignment from type-II to type-I of these vdWHs can be induced by the opposite band shifts between layers, which may enrich their applications in light-emitting diodes and lasers. Meanwhile, the PCE can be expanded up to 23%, and an obvious red-shift peak of the photocurrent in the visible light range are also obtained at different Ez. These fascinating tunable properties of KAgSe/KAgX vdWHs under varying Ez not only promote the improvement of their photoelectric performances, but the underlying mechanisms can also be applied to next experimental design and practical application of other 2D photovoltaic systems. Especially for the red-shift peak of the photocurrent, which is rarely found but highly desirable in practical visible photoelectric conversion. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 11 pages, 7figures

Tunable Magnetic Properties in Sr$_2$FeReO$_6$ Double-Perovskite

Authors: Z. T. Zhang, H. Yan, Z. Huang, X. Chi, C. J. Li, Z. S. Lim, S. W. Zeng, K. Han, G. J. Omar, K. X. Jin, A. Ariando

Abstract: Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ fi… ▽ More Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ film, the ferrimagnetic-to-paramagnetic phase transition occurs when P$_O2$ is reduced to 30 mTorr, probably due to the formation of Re$^{4+}$ ions that replace the stoichiometric Re$^{5+}$ to cause disorders of $B$-site ions. On the other hand, a large compressive strain or tensile strain shifts this critical P$_O2$ to below 1 mTorr or above 40 mTorr, respectively. The observations could be attributed to the modulation of $B$-site ordering by epitaxial strain through affecting elemental valence. Our results provide a feasible way to expand the functional tunability of magnetic double-perovskite oxides that hold great promise for spintronic devices. △ Less

Submitted 26 April, 2023; originally announced April 2023.

Comments: Main text 18 pages, 5 figures; Supplementary information 8 pages, 4 figures

Journal ref: Nano Letters 22, 9900 (2022)

CHGNet: Pretrained universal neural network potential for charge-informed atomistic modeling

Authors: Bowen Deng, Peichen Zhong, KyuJung Jun, Janosh Riebesell, Kevin Han, Christopher J. Bartel, Gerbrand Ceder

Abstract: The simulation of large-scale systems with complex electron interactions remains one of the greatest challenges for the atomistic modeling of materials. Although classical force fields often fail to describe the coupling between electronic states and ionic rearrangements, the more accurate \textit{ab-initio} molecular dynamics suffers from computational complexity that prevents long-time and large… ▽ More The simulation of large-scale systems with complex electron interactions remains one of the greatest challenges for the atomistic modeling of materials. Although classical force fields often fail to describe the coupling between electronic states and ionic rearrangements, the more accurate \textit{ab-initio} molecular dynamics suffers from computational complexity that prevents long-time and large-scale simulations, which are essential to study many technologically relevant phenomena, such as reactions, ion migrations, phase transformations, and degradation. In this work, we present the Crystal Hamiltonian Graph neural Network (CHGNet) as a novel machine-learning interatomic potential (MLIP), using a graph-neural-network-based force field to model a universal potential energy surface. CHGNet is pretrained on the energies, forces, stresses, and magnetic moments from the Materials Project Trajectory Dataset, which consists of over 10 years of density functional theory static and relaxation trajectories of $\sim 1.5$ million inorganic structures. The explicit inclusion of magnetic moments enables CHGNet to learn and accurately represent the orbital occupancy of electrons, enhancing its capability to describe both atomic and electronic degrees of freedom. We demonstrate several applications of CHGNet in solid-state materials, including charge-informed molecular dynamics in Li$_x$MnO$_2$, the finite temperature phase diagram for Li$_x$FePO$_4$ and Li diffusion in garnet conductors. We critically analyze the significance of including charge information for capturing appropriate chemistry, and we provide new insights into ionic systems with additional electronic degrees of freedom that can not be observed by previous MLIPs. △ Less

Submitted 20 June, 2023; v1 submitted 27 February, 2023; originally announced February 2023.

Exploring the magnetic properties of individual barcode nanowires using wide-field diamond microscopy

Authors: Jungbae Yoon, Jun Hwan Moon, Jugyeong Jeong, Yu Jin Kim, Kihwan Kim, Hee Seong Kang, Yoo Sang Jeon, Eunsoo Oh, Sun Hwa Lee, Kihoon Han, Dongmin Lee, Chul-Ho Lee, Young Keun Kim, Donghun Lee

Abstract: Barcode magnetic nanowires typically comprise a multilayer magnetic structure in a single body with more than one segment type. Interestingly, owing to selective functionalization and novel interactions between the layers, barcode magnetic nanowires have attracted significant attention, particularly in the field of bioengineering. However, an analysis of their magnetic properties at the individual… ▽ More Barcode magnetic nanowires typically comprise a multilayer magnetic structure in a single body with more than one segment type. Interestingly, owing to selective functionalization and novel interactions between the layers, barcode magnetic nanowires have attracted significant attention, particularly in the field of bioengineering. However, an analysis of their magnetic properties at the individual nanowire level remains challenging. With this background, herein, we investigated the characterization of magnetic nanowires at room temperature under ambient conditions based on magnetic images obtained via wide-field quantum microscopy with nitrogen-vacancy centers in diamond. Consequently, we could extract critical magnetic properties, such as the saturation magnetization and coercivity, of single nanowires by comparing the experimental results with those of micromagnetic simulations. This study opens up the possibility for a versatile characterization method suited to individual magnetic nanowires. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Comments: main text (20 pages, 5 figures), supplementary materials (9 pages, 8 figures)

MICROSTRUCTURE OF Glidcop AL-60

Authors: Yan Xin, Jun Lu, Ke Han

Abstract: Glidcop is an oxide-particle-dispersion strengthened copper composite that has a combination of high mechanical strength and high electrical conductivity. It has been used as a conductor for 100 T ultrahigh field pulsed magnets by the National High Magnetic Field Laboratory, USA. In the quest for even higher field pulsed magnets, material development is crucial. Since the mechanical properties of… ▽ More Glidcop is an oxide-particle-dispersion strengthened copper composite that has a combination of high mechanical strength and high electrical conductivity. It has been used as a conductor for 100 T ultrahigh field pulsed magnets by the National High Magnetic Field Laboratory, USA. In the quest for even higher field pulsed magnets, material development is crucial. Since the mechanical properties of a material are often determined by its micro-structure, full characterization of the microstructure of Glidcop is necessary. In this work, we studied the microstructure of Glidcop AL-60 using both transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM). We identified both alpha-Al2O3 and cubic eta-Al2O3 nanoparticles in AL-60 and investigated their size and density distribution. The small alumina particles eta-Al2O3 nanoparticles with typical size of 5 to 30 nm are of triangular shape. They have had well defined crystal orientation relation-ship with the Cu matrix. We observed dislocations pinned by the alumina nanoparticles in cold-drawn wires. We believed that dislocation bypassing alumina particles via Orowan looping was the main strengthening mechanism. We observed microcracks near large particles, demonstrating the detrimental effect of large particles in AL-60. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 4 pages, 5 figures

Journal ref: IEEE transactions on Applied Superconductivity, 2022

Critical Current Longitudinal and Transverse Strain Sensitivities of High JC Nb3Sn Conductors

Authors: Jun Lu, Ke Han, Robert P. Walsh, Todd Atkins, Scott T. Bole

Abstract: Characterizing critical current IC of Nb3Sn strands as function of a strain is very important for large high field superconducting magnet applications such as the superconducting outsert coil of the series-connected hybrid at the NHMFL and the ITER magnets. Apparatuses for measuring IC versus longitudinal strain and transverse stress have been developed and used at the NHMFL. We have characterized… ▽ More Characterizing critical current IC of Nb3Sn strands as function of a strain is very important for large high field superconducting magnet applications such as the superconducting outsert coil of the series-connected hybrid at the NHMFL and the ITER magnets. Apparatuses for measuring IC versus longitudinal strain and transverse stress have been developed and used at the NHMFL. We have characterized the IC strain sensitivities of a few candidate strands for the series-connected-hybrid. In addition, IC irreversibility strains are measured for the recently developed ITER high JC strands. The different strain sensitivities for different strands are discussed. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 4 pages, 6 figures

Journal ref: IEEE Transactions on Applied Superconductivity, 2008

Nondestructive testing of high strength conductors for high field pulsed magnets

Authors: Jun Lu, Todd Adkins, Iain Dixon, Doan Nguyen, Ke Han

Abstract: High field pulsed magnets at the NHMFL use high strength conductor wires up to 90% of their ultimate tensile strength. Therefore it is very important to ensure that the wires are free of flaws. It is known that in the conductors cold drawing process, internal chevron crack could occur due to unsuitable drawing die schedule or inadequate lubrication. These internal cracks occurs infrequently along… ▽ More High field pulsed magnets at the NHMFL use high strength conductor wires up to 90% of their ultimate tensile strength. Therefore it is very important to ensure that the wires are free of flaws. It is known that in the conductors cold drawing process, internal chevron crack could occur due to unsuitable drawing die schedule or inadequate lubrication. These internal cracks occurs infrequently along the wire, so tensile tests of short samples cut from the ends of a long length conductor often miss the problem. In addition, small inclusions on the wire surface can compromise wires fatigue properties. In this paper, we present results of our non-destructive testing (NDT) inspection of Glidcop AL60 wires using eddy current testing (ECT), ultrasonic testing (UT) and x-ray radiography (2D and 3D). Chevron cracks were found in some AL60 conductors by all three NDT techniques. Surface inclusions were found by ECT. We have developed a long length ECT wire inspection capability. △ Less

Submitted 13 February, 2023; originally announced February 2023.

Comments: 4 pages, 9 figures

A Novel Non-Volatile Inverter-based CiM: Continuous Sign Weight Transition and Low Power on-Chip Training

Authors: Dong Zhang, Yuye Kang, Gan Liu, Zuopu Zhou, Kaizhen Han, Chen Sun, Leming Jiao, Xiaolin Wang, Yue Chen, Qiwen Kong, Zijie Zheng, Long Liu, Xiao Gong

Abstract: In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect tran… ▽ More In this work, we report a novel design, one-transistor-one-inverter (1T1I), to satisfy high speed and low power on-chip training requirements. By leveraging doped HfO2 with ferroelectricity, a non-volatile inverter is successfully demonstrated, enabling desired continuous weight transition between negative and positive via the programmable threshold voltage (VTH) of ferroelectric field-effect transistors (FeFETs). Compared with commonly used designs with the similar function, 1T1I uniquely achieves pure on-chip-based weight transition at an optimized working current without relying on assistance from off-chip calculation units for signed-weight comparison, facilitating high-speed training at low power consumption. Further improvements in linearity and training speed can be obtained via a two-transistor-one-inverter (2T1I) design. Overall, focusing on energy and time efficiencies, this work provides a valuable design strategy for future FeFET-based computing-in-memory (CiM). △ Less

Submitted 19 September, 2022; originally announced September 2022.

First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack

Authors: Junshuai Chai, Hao Xu, Jinjuan Xiang, Yuanyuan Zhang, Shujing Zhao, Fengbin Tian, Jiahui Duan, Kai Han, Xiaolei Wang, Jun Luo, Wenwu Wang, Tianchun Ye

Abstract: The gate defect of the ferroelectric HfO$_2$-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si structure, has not… ▽ More The gate defect of the ferroelectric HfO$_2$-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si structure, has not been reported so far. The key challenge is the construction of metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack models. Here, we use the Hf$_{0.5}$Zr$_{0.5}$O$_2$(130) high-index crystal face as the orthorhombic ferroelectric layer and construct a robust atomic structure of the orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack without any gap states. Its high structural stability is ascribed to the insulated interface. The calculated band offsets show that this gate structure is of the type-I band alignment. Furthermore, the formation energies and charge transition levels (CTLs) of defects reveal that the oxygen vacancy defects are more favorable to form compared with other defects such as oxygen interstitial and Hf/Zr vacancy, and their CTLs are mainly localized near the Si conduction band minimum and valence band maximum, in agreement with the reported experimental results. The oxygen vacancy defects are responsible for charge trapping/de-trapping behavior in Si FeFET. This work provides an insight into gate defects and paves the way to carry out the first-principles study of ferroelectric HfO$_2$-based Si FeFET. △ Less

Submitted 20 June, 2022; v1 submitted 28 April, 2022; originally announced April 2022.

Comments: 18 pages, 5 figures

Critical behavior in the Mn$_{5}$Ge$_{3}$ ferromagnet

Authors: Jun-Fa Lin, Huan Wang, Sheng Xu, Xiao-Yan Wang, Xiang-Yu Zeng, Zheng-Yi Dai, Jing Gong, Kun Han, Yi-Ting Wang, Xiao-Ping Ma, Tian-Long Xia

Abstract: High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn$ _{5}$Ge$_{3}$ used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents… ▽ More High-Curie-temperature ferromagnets are promising candidates for designing new spintronic devices. Here we have successfully synthesized a single-crystal sample of the itinerant ferromagnet Mn$ _{5}$Ge$_{3}$ used flux method and its critical properties were investigated by means of bulk dc-magnetization at the boundary between the ferromagnetic (FM) and paramagnetic (PM) phase. Critical exponents $ β=0.336 \pm 0.001 $ with a critical temperature $ T_{c}=300.29 \pm 0.01 $ K and $ γ=1.193 \pm 0.003 $ with $ T_{c} = 300.15 \pm 0.05 $ K are obtained by the modified Arrott plot, whereas $ δ= 4.61 \pm 0.03 $ is deduced by a critical isotherm analysis at $ T_{c} = 300 $ K. The self-consistency and reliability of these critical exponents are verified by the Widom scaling law and the scaling equations. Further analysis reveals that the spin coupling in Mn$ _{5}$Ge$_{3}$ exhibits three-dimensional Ising-like behavior. The magnetic exchange is found to decay as $ J(r)\approx r^{-4.855} $ and the spin interactions are extended beyond the nearest neighbors, which may be related to different set of Mn--Mn interactions with unequal magnitude of exchange strengths. Additionally, the existence of noncollinear spin configurations in Mn$ _{5} $Ge$ _{3} $ results in a small deviation of obtained critical exponents from those for standard 3D-Ising model. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: 8 pages, 6 figures. arXiv admin note: substantial text overlap with arXiv:1803.05905 by other authors

Quantum oscillations and weak anisotropic resistivity in the chiral Fermion semimetal PdGa

Authors: Xiang-Yu Zeng, Zheng-Yi Dai, Sheng Xu, Ning-Ning Zhao, Huan Wang, Xiao-Yan Wang, Jun-Fa Lin, Jing Gong, Xiao-Ping Ma, Kun Han, Yi-Ting Wang, Peng Cheng, Kai Liu, Tian-Long Xia

Abstract: We perform a detailed analysis of the magnetotransport and de Haas-van Alphen (dHvA) oscillations in crystal PdGa which is predicted to be a typical chiral Fermion semimetal from CoSi family holding a large Chern number. The unsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivity indicate that PdGa is a multi-band system without electron-hole compensation. Angle-dependent resis… ▽ More We perform a detailed analysis of the magnetotransport and de Haas-van Alphen (dHvA) oscillations in crystal PdGa which is predicted to be a typical chiral Fermion semimetal from CoSi family holding a large Chern number. The unsaturated quadratic magnetoresistance (MR) and nonlinear Hall resistivity indicate that PdGa is a multi-band system without electron-hole compensation. Angle-dependent resistivity in PdGa shows weak anisotropy with twofold or threefold symmetry when the magnetic field rotates within the (1$\bar{1}$0) or (111) plane perpendicular to the current. Nine or three frequencies are extracted after the fast Fourier-transform analysis (FFT) of the dHvA oscillations with B//[001] or B//[011], respectively, which is confirmed to be consistent with the Fermi surfaces (FSs) obtained from first-principles calculations with spin-orbit coupling (SOC) considered. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 106, 205120 (2022)

Large anomalous Hall effect in layered antiferromagnet Co$_{0.29}$TaS$_2$

Authors: Huan Wang, Jun-Fa Lin, Xiang-Yu Zeng, Xiao-Ping Ma, Jing Gong, Zheng-Yi Dai, Xiao-Yan Wang, Kun Han, Yi-Ting Wang, Tian-Long Xia

Abstract: We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co$_{0.29}$TaS$_{2}$ undergoes two transitions at T… ▽ More We present a study on the magnetization, anomalous Hall effect (AHE) and novel longitudinal resistivity in layered antiferromagnet Co$_{0.29}$TaS$_{2}$. Of particular interests in Co$_{0.29}$TaS$_{2}$ are abundant magnetic transitions, which show that the magnetic structures are tuned by temperature or magnetic field. With decreasing temperature, Co$_{0.29}$TaS$_{2}$ undergoes two transitions at T$_{t1}\sim$ 38.3 K and T$_{t2}\sim$ 24.3 K. Once the magnetic field is applied, another transition T$_{t3}\sim$ 34.3 K appears between 0.3 T and 5 T. At 2 K, an obvious ferromagnetic hysteresis loop within H$_{t1}\sim\pm$ 6.9 T is observed, which decreases with increasing temperature and eventually disappears at T$_{t2}$. Besides, Co$_{0.29}$TaS$_{2}$ displays step-like behavior as another magnetic transition around H$_{t2}\sim\pm$ 4 T, which exists until $\sim$ T$_{t1}$. These characteristic temperatures and magnetic fields mark complex magnetic phase transitions in Co$_{0.29}$TaS$_{2}$, which are also evidenced in transport results. Large AHE dominates in the Hall resistivity with the conspicuous value of R$_{s}$/R$_{0}\sim 10^{5}$, considering that the tiny net magnetization (0.0094$μ_{B}$/Co) alone would not lead to this value, thus the contribution of Berry curvature is necessary. The longitudinal resistivity illustrates a prominent irreversible behavior within H$_{t1}$. The abrupt change at H$_{t2}$ below T$_{t1}$, corresponding to the step-like magnetic transitions, is also observed. Synergy between the magnetism and topological properties, both playing a crucial role, may be the key factor of large AHE in antiferromagnet, which also offers a new perspective in magnetic topological materials with the platform of Co$_{0.29}$TaS$_{2}$. △ Less

Submitted 23 March, 2022; originally announced March 2022.

Comments: 5 pages,4 figures

Computational Associative Memory with Amorphous InGaZnO Channel 3D NAND-Compatible FG Transistors

Authors: Chen Sun, Chao Li, Subhranu Samanta, Kaizhen Han, Zijie Zheng, Jishen Zhang, Qiwen Kong, Haiwen Xu, Zuopu Zhou, Yue Chen, Cheng Zhuo, Kai Ni, Xunzhao Yin, Xiao Gong

Abstract: 3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility,… ▽ More 3D NAND enables continuous NAND density and cost scaling beyond conventional 2D NAND. However, its poly-Si channel suffers from low mobility, large device variations, and instability caused by grain boundaries. Here, we overcome these drawbacks by introducing an amorphous indium-gallium-zinc-oxide (a-IGZO) channel, which has the advantages of ultra-low OFF current, back-end-of-line compatibility, higher mobility and better uniformity than poly-Si, and free of grain boundaries due to the amorphous nature. Ultra-scaled floating-gate (FG) transistors with a channel length of 60 nm are reported, achieving the highest ON current of 127 uA/um among all reported a-IGZO-based flash devices for high-density, low-power, and high-performance 3D NAND applications. Furthermore, a non-volatile and area-efficient ternary content-addressable memory (TCAM) with only two a-IGZO FG transistors is experimentally demonstrated. Array-level simulations using experimentally calibrated models show that this design achieves at least 240x array-size scalability and 2.7-fold reduction in search energy than 16T-CMOS, 2T2R, and 2FeFET TCAMs. △ Less

Submitted 15 December, 2022; v1 submitted 15 December, 2021; originally announced December 2021.

Comments: 50 pages, 20 figures

Journal ref: Advanced Electronic Materials, vol. 8, no. 12, p. 2200643, 2022

Reversible modulation of metal-insulator transition in VO2 via chemically-induced oxygen migration

Authors: Kun Han, Hanyu Wang, Liang Wu, Yu Cao, Dong-Chen Qi, Changjian Li, Zhen Huang, Xiao Li, X. Renshaw Wang

Abstract: Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic change in resistivity. Here, we demonstrate a reversible control of MIT in VO2 films via oxygen stoichiometry engineering. By facilely depositing and diss… ▽ More Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the dramatic change in resistivity. Here, we demonstrate a reversible control of MIT in VO2 films via oxygen stoichiometry engineering. By facilely depositing and dissolving a water-soluble yet oxygen-active Sr3Al2O6 capping layer atop the VO2 at room temperature, oxygen ions can reversibly migrate between VO2 and Sr3Al2O6, resulting in a gradual suppression and a complete recovery of MIT in VO2. The migration of the oxygen ions is evidenced in a combination of transport measurement, structural characterization and first-principles calculations. This approach of chemically-induced oxygen migration using a water-dissolvable adjacent layer could be useful for advanced electronic and iontronic devices and studying oxygen stoichiometry effects on the MIT. △ Less

Submitted 11 September, 2021; originally announced September 2021.

Comments: 16 pages, 4 figures

Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

Authors: Kun Han, Liang Wu, Yu Cao, Hanyu Wang, Chen Ye, Ke Huang, M. Motapothula, Hongna Xing, Xinghua Li, Dong-Chen Qi, Xiao Li, X. Renshaw Wang

Abstract: Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding for… ▽ More Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of the study of lattice-electron interplay. However, the reduction of the thickness to an ultrathin region (a few nm) is typically detrimental to the MIT in epitaxial films, and even catastrophic for their freestanding form. Here, we report an enhanced MIT in VO2-based freestanding membranes, with a lateral size up to millimetres and VO2 thickness down to 5 nm. The VO2-membranes were detached by dissolving a Sr3Al2O6 sacrificial layer between the VO2 thin film and c-Al2O3(0001) substrate, allowing a transfer onto arbitrary surfaces. Furthermore, the MIT in the VO2-membrane was greatly enhanced by inserting an intermediate Al2O3 buffer layer. In comparison to the best available ultrathin VO2-membranes, the enhancement of MIT is over 400% at 5 nm VO2 thickness and more than one order of magnitude for VO2 above 10 nm. Our study widens the spectrum of functionality in ultrathin and large-scale membranes, and enables the potential integration of MIT into flexible electronics and photonics. △ Less

Submitted 30 April, 2021; originally announced May 2021.

Observation of perfect diamagnetism and interfacial effect on the electronic structures in Nd0.8Sr0.2NiO2 superconducting infinite layers

Authors: S. W. Zeng, X. M. Yin, C. J. Li, L. E. Chow, C. S. Tang, K. Han, Z. Huang, Y. Cao, D. Y. Wan, Z. T. Zhang, Z. S. Lim, C. Z. Diao, P. Yang, A. T. S. Wee, S. J. Pennycook, A. Ariando

Abstract: Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, materi… ▽ More Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, material synthesis remains challenging, direct demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we show high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and demonstrate the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is achieved, confirming the occurrence of superconductivity in the films. Unlike the thick films in which the normal-state Hall-coefficient changes signs as the temperature decreases, the Hall-coefficient of films thinner than 5.5 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign-change of the Hall-coefficient. △ Less

Submitted 13 February, 2022; v1 submitted 29 April, 2021; originally announced April 2021.

Comments: 24 pages, 3 main figures, 6 supplementary figures

Journal ref: Nature Communications 13, 743 (2022)

Room-temperature colossal magnetoresistance in terraced single-layer graphene

Authors: J. X. Hu, J. Gou, M. Yang, G. J. Omar, J. Y. Tan, S. W. Zeng, Y. P. Liu, K. Han, Z. S. Lim, Z. Huang, A. T. S. Wee, A. Ariando

Abstract: Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor ba… ▽ More Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, we report a room-temperature colossal MR of up to 5,000% at 9 T in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO2 terminated SrTiO3, we demonstrate a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices. Strikingly, a colossal MR of >1,000% was also achieved in the terraced graphene even at a high carrier density of ~1012 cm-2. Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. Our results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate. △ Less

Submitted 19 January, 2021; originally announced January 2021.

Comments: 64 pages; Main 31 pages, 4 figures; Supplementary 33 pages, 18 figures

Journal ref: Advanced Materials 32, 2002201 (2020)

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Authors: W. X. Zhou, H. J. Wu, J. Zhou, S. W. Zeng, C. J. Li, M. S. Li, R. Guo, J. X. Xiao, Z. Huang, W. M. Lv, K. Han, P. Yang, C. G. Li, Z. S. Lim, H. Wang, Y. Zhang, S. J. Chua, K. Y. Zeng, T. Venkatesan, J. S. Chen, Y. P. Feng, S. J. Pennycook, A. Ariando

Abstract: Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T… ▽ More Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics. △ Less

Submitted 11 July, 2020; originally announced July 2020.

Comments: Main text: 25 pages, 4 figures Supplementary note: 19 pages, 11 figures

Journal ref: Commun. Phys. 2, 125 (2019)

Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films

Authors: Shengwei Zeng, Chi Sin Tang, Xinmao Yin, Changjian Li, Mengsha Li, Zhen Huang, Junxiong Hu, Wei Liu, Ganesh Ji Omar, Hariom Jani, Zhi Shiuh Lim, Kun Han, Dongyang Wan, Ping Yang, Stephen John Pennycook, Andrew T. S. Wee, Ariando Ariando

Abstract: Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the n… ▽ More Infinite-layer Nd1-xSrxNiO2 thin films with Sr doping level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome. △ Less

Submitted 2 October, 2020; v1 submitted 23 April, 2020; originally announced April 2020.

Comments: 23 pages (including Supplemental Material), 12 Figures (including 8 supplemental figures)

Journal ref: Phys. Rev. Lett. 125, 147003 (2020)

Tailoring magnetic order via atomically stacking 3d/5d electrons

Authors: Ke Huang, Liang Wu, Maoyu Wang, Nyayabanta Swain, M. Motapothula, Yongzheng Luo, Kun Han, Mingfeng Chen, Chen Ye, Allen Jian Yang, Huan Xu, Dong-chen Qi, Alpha T. N'Diaye, Christos Panagopoulos, Daniel Primetzhofer, Lei Shen, Pinaki Sengupta, Jing Ma, Zhenxing Feng, Ce-Wen Nan, X. Renshaw Wang

Abstract: The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar… ▽ More The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, contributing to future applications. △ Less

Submitted 14 September, 2021; v1 submitted 16 January, 2020; originally announced January 2020.

Journal ref: Applied Physics Reviews 7, 011401 (2020)

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

Authors: Su Kong Chong, Kyu Bum Han, Taylor D. Sparks, Vikram V. Deshpande

Abstract: The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling betwe… ▽ More The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation. △ Less

Submitted 5 January, 2020; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Lett. 123, 036804 (2019)

Aperiodic quantum oscillations in the two-dimensional electron gas at the LaAlO3/SrTiO3 interface

Authors: Km Rubi, Julien Gosteau, Raphaël Serra, Kun Han, Shengwei Zeng, Zhen Huang, Etienne Snoeck, Rémi Arras, Benedicte Warot-Fonrose, Ariando, Michel Goiran, Walter Escoffier

Abstract: Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by… ▽ More Despite several attempts, the intimate electronic structure of two-dimensional electron systems buried at the interface between LaAlO3 and SrTiO3 still remains to be experimentally revealed. Here, we investigate the transport properties of a high-mobility quasi-two-dimensional electron gas at this interface under high magnetic field (55 T) and provide new insights for electronic band structure by analyzing the Shubnikov-de Haas oscillations. Interestingly, the quantum oscillations are not 1/B-periodic and produce a highly non-linear Landau plot (Landau level index versus 1/B). Among possible scenarios, the Roth-Gao-Niu equation provides a natural explanation for 1/B-aperiodic oscillations in relation with the magnetic response functions of the system. Overall, the magneto-transport data are discussed in light of high-resolution scanning transmission electron microscopy analysis of the interface as well as calculations from density functional theory. △ Less

Submitted 7 March, 2019; originally announced March 2019.

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces

Authors: S. W. Zeng, X. M. Yin, T. S. Herng, K. Han, Z. Huang, L. C. Zhang, C. J. Li, W. X. Zhou, D. Y. Wan, P. Yang, J. Ding, A. T. S. Wee, J. M. D. Coey, T. Venkatesan, A. Rusydi, A. Ariando

Abstract: Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and La… ▽ More Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO3 (STO) crystals and LaAlO3 (LAO) overlayer through the measurements of electrical transport, X-ray absorption spectroscopy (XAS) and photoluminescence (PL) spectra. We found that oxygen vacancies (Ovac) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of Ovac, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 5 figures; Supplementary materials included at the end of the main text

Journal ref: Physical Review Letters, October 05, 2018

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions

Authors: Su Kong Chong, Kyu Bum Han, Akira Nagaoka, Ryuichi Tsuchikawa, Renlong Liu, Haoliang Liu, Z. Valy Vardeny, Dmytro A. Pesin, Changgu Lee, Taylor D. Sparks, Vikram V. Deshpande

Abstract: Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface… ▽ More Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 19 pages, 4 figures

Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions

Authors: Kyu-Bum Han, Su Kong Chong, Akira Nagaoka, Suzanne Petryk, Michael A. Scarpulla, Vikram V. Deshpande, Taylor D. Sparks

Abstract: Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth… ▽ More Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 22 pages, 6 figures, 1 table

Low temperature magnetoresistance of (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range… ▽ More The two dimensional conducting interfaces in SrTiO$_3$-based systems are known to show a variety of coexisting and competing phenomena in a complex phase space. Magnetoresistance measurements, which are typically used to extract information about the various interactions in these systems, must be interpreted with care, since multiple interactions can contribute to the resistivity in a given range of magnetic field and temperature. Here we review all the phenomena that can contribute to transport in SrTiO$_3$-based conducting interfaces at low temperatures, and discuss possible ways to distinguish between various phenomena. We apply this analysis to the magnetoresistance data of (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/STO (LSAT/STO) heterostructures in perpendicular field, and find an excess negative magnetoresistance contribution which cannot be explained by weak localization alone. We argue that contributions from magnetic scattering as well as electron-electron interactions can provide a possible explanation for the observed magnetoresistance. △ Less

Submitted 1 March, 2018; originally announced March 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 99, 035408 (2019)

Strong spin-orbit coupling and magnetism in (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35})$/SrTiO$_3$

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas, which can display a variety of coexisting and competing phenomena. In the case of heterointerfaces based on SrTiO$_3$, many of these phenomena can be effectively… ▽ More Strong correlations, multiple lattice degrees of freedom, and the ease of doping make complex oxides a source of great research interest. Complex oxide heterointerfaces break inversion symmetry and can host a two dimensional carrier gas, which can display a variety of coexisting and competing phenomena. In the case of heterointerfaces based on SrTiO$_3$, many of these phenomena can be effectively tuned by using an electric gate, due to the large dielectric constant of SrTiO$_3$. Most studies so far have focused on (001) oriented heterostructures; however, (111) oriented heterostructures have recently gained attention due to the possibility of finding exotic physics in these systems due their hexagonal surface crystal symmetry. In this work, we use magnetoresistance to study the evolution of spin-orbit interaction and magnetism in a new system, (111) oriented (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$. At more positive values of the gate voltage, which correspond to high carrier densities, we find that transport is multiband, and dominated by high mobility carriers with a tendency towards weak localization. At more negative gate voltages, the carrier density is reduced, the high mobility bands are depopulated, and weak antilocalization effects begin to dominate, indicating that spin-orbit interaction becomes stronger. At millikelvin temperatures, and gate voltages corresponding to the strong spin-orbit regime, we observe hysteresis in magnetoresistance, indicative of ferromagnetism in the system. Our results suggest that in the (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ system, low mobility carriers which experience strong spin-orbit interactions participate in creating magnetic order in the system. △ Less

Submitted 11 March, 2018; v1 submitted 14 November, 2017; originally announced November 2017.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. B 98, 085416 (2018)

Molecular Hydrodynamics: Vortex Formation and Sound Wave Propagation

Authors: Kyeong Hwan Han, Changho Kim, Peter Talkner, George Em Karniadakis, Eok Kyun Lee

Abstract: In the present study, quantitative feasibility tests of the hydrodynamic description of a two-dimensional fluid at the molecular level are performed, both with respect to length and time scales. Using high-resolution fluid velocity data obtained from extensive molecular dynamics simulations, we computed the transverse and longitudinal components of the velocity field by the Helmholtz decomposition… ▽ More In the present study, quantitative feasibility tests of the hydrodynamic description of a two-dimensional fluid at the molecular level are performed, both with respect to length and time scales. Using high-resolution fluid velocity data obtained from extensive molecular dynamics simulations, we computed the transverse and longitudinal components of the velocity field by the Helmholtz decomposition and compared them with those obtained from the linearized Navier-Stokes (LNS) equations with time-dependent transport coefficients. By investigating the vortex dynamics and the sound wave propagation in terms of these field components, we confirm the validity of the LNS description for times comparable to or larger than several mean collision times. The LNS description still reproduces the transverse velocity field accurately at smaller times, but it fails to predict characteristic patterns of molecular origin visible in the longitudinal velocity field. Based on these observations, we validate the main assumptions of the mode-coupling approach. The assumption that the velocity autocorrelation function can be expressed in terms of the fluid velocity field and the tagged particle distribution is found to be remarkably accurate even for times comparable to or smaller than the mean collision time. This suggests that the hydrodynamic-mode description remains valid down to the molecular scale. △ Less

Submitted 15 January, 2018; v1 submitted 3 November, 2017; originally announced November 2017.

Journal ref: J. Chem. Phys. 148, 024506 (2018)

The Mechanism of Electrolyte Gating on High-Tc Cuprates: The Role of Oxygen Migration and Electrostatics

Authors: Lingchao Zhang, Shengwei Zeng, Xinmao Yin, Teguh Citra Asmara, Ping Yang, Kun Han, Yu Cao, Wenxiong Zhou, Dongyang Wan, Chi Sin Tang, Andrivo Rusydi, Ariando, Thirumalai Venkatesan

Abstract: Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controver… ▽ More Electrolyte gating is widely used to induce large carrier density modulation on solid surfaces to explore various properties. Most of past works have attributed the charge modulation to electrostatic field effect. However, some recent reports have argued that the electrolyte gating effect in VO2, TiO2 and SrTiO3 originated from field-induced oxygen vacancy formation. This gives rise to a controversy about the gating mechanism, and it is therefore vital to reveal the relationship between the role of electrolyte gating and the intrinsic properties of materials. Here, we report entirely different mechanisms of electrolyte gating on two high-Tc cuprates, NdBa2Cu3O7-δ (NBCO) and Pr2-xCexCuO4 (PCCO), with different crystal structures. We show that field-induced oxygen vacancy formation in CuO chains of NBCO plays the dominant role while it is mainly an electrostatic field effect in the case of PCCO. The possible reason is that NBCO has mobile oxygen in CuO chains while PCCO does not. Our study helps clarify the controversy relating to the mechanism of electrolyte gating, leading to a better understanding of the role of oxygen electro migration which is very material specific. △ Less

Submitted 4 October, 2017; originally announced October 2017.

Comments: 4 figures; Supporting Information included at the end of the main text

Journal ref: ACS Nano, September 25, 2017

Nature of self-diffusion in two-dimensional fluids

Authors: Bongsik Choi, Kyeong Hwan Han, Changho Kim, Peter Talkner, Akinori Kidera, Eok Kyun Lee

Abstract: Self-diffusion in a two-dimensional simple fluid is investigated by both analytical and numerical means. We investigate the anomalous aspects of self-diffusion in two-dimensional fluids with regards to the mean square displacement, the time-dependent diffusion coefficient, and the velocity autocorrelation function using a consistency equation relating these quantities. We numerically confirm the c… ▽ More Self-diffusion in a two-dimensional simple fluid is investigated by both analytical and numerical means. We investigate the anomalous aspects of self-diffusion in two-dimensional fluids with regards to the mean square displacement, the time-dependent diffusion coefficient, and the velocity autocorrelation function using a consistency equation relating these quantities. We numerically confirm the consistency equation by extensive molecular dynamics simulations for finite systems, corroborate earlier results indicating that the kinematic viscosity approaches a finite, non-vanishing value in the thermodynamic limit, and establish the finite size behavior of the diffusion coefficient. We obtain the exact solution of the consistency equation in the thermodynamic limit and use this solution to determine the large time asymptotics of the mean square displacement, the diffusion coefficient, and the velocity autocorrelation function. An asymptotic decay law of the velocity autocorrelation function resembles the previously known self-consistent form, $1/(t\sqrt{\ln t})$, however with a rescaled time. △ Less

Submitted 6 November, 2017; v1 submitted 19 September, 2017; originally announced September 2017.

Comments: 10 pages, to appear in New Journal of Physics

Journal ref: New J. Phys. 19, 123038 (2017)

Signatures of Electronic Nematicity in (111) LaAlO$_3$/SrTiO$_3$ Interfaces

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Symmetry breaking is a fundamental concept in condensed matter physics whose presence often heralds new phases of matter. For instance, the breaking of time reversal symmetry is traditionally linked to magnetic phases in a material, while the breaking of gauge symmetry can lead to superfluidity/superconductivity. Nematic phases are phases in which rotational symmetry is broken while maintaining tr… ▽ More Symmetry breaking is a fundamental concept in condensed matter physics whose presence often heralds new phases of matter. For instance, the breaking of time reversal symmetry is traditionally linked to magnetic phases in a material, while the breaking of gauge symmetry can lead to superfluidity/superconductivity. Nematic phases are phases in which rotational symmetry is broken while maintaining translational symme- try, and are traditionally associated with liquid crystals. Electronic nematic states where the or- thogonal in-plane crystal directions have different electronic properties have garnered a great deal of attention after their discovery in Sr$_3$Ru$_2$O$_7$, multiple iron based superconductors, and in the superconducting state of CuBiSe. Here we demonstrate the existence of an electronic ne- matic phase in the two-dimensional carrier gas that forms at the (111) LaAlO$_3$ (LAO)/SrTiO$_3$ (STO) interface that onsets at low temperatures, and is tunable by an electric field. △ Less

Submitted 28 August, 2017; v1 submitted 16 August, 2017; originally announced August 2017.

Comments: 6 pages 3 figures

Journal ref: Phys. Rev. B 97, 041408 (2018)

Magnetoresistance in the superconducting state at the (111) LaAlO$_3$/SrTiO$_3$ interface

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Rec… ▽ More Condensed matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order is known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is in the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state, and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity. △ Less

Submitted 10 July, 2017; originally announced July 2017.

Comments: 6 Pages 4 figures

Journal ref: Phys. Rev. B 96, 134502 (2017)

Electrical Properties and Subband Occupancy at the (La,Sr)(Al,Ta)O$_3$/SrTiO$_3$ Interface

Authors: K. Han, Z. Huang, S. W. Zeng, M. Yang, C. J. Li, W. X. Zhou, X. Renshaw Wang, T. Venkatesan, J. M. D. Coey, M. Goiran, W. Escoffier, Ariando

Abstract: The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density… ▽ More The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)O$_{0.3}$/SrTiO$_{0.3}$ (LSAT/STO) interface. Before oxygen annealing, the as-grown interface exhibits a high electron density and electron occupancy of two subbands: higher-mobility electrons ($μ_1\approx{10^4}$ cm$^2$V$^{-1}$s$^{-1}$ at 2 K) occupy the lower-energy $3d_{xy}$ subband, while lower-mobility electrons ($μ_1\approx{10^3}$ cm$^{2}$V$^{-1}$s$^{-1}$ at 2 K) propagate in the higher-energy $3d_{xz/yz}$-dominated subband. After removing oxygen vacancies by annealing in oxygen, only a single type of 3dxy electrons remain at the annealed interface, showing tunable Shubnikov-de Haas (SdH) oscillations below 9 T at 2 K and an effective mass of $0.7m_e$. By contrast, no oscillation is observed at the as-grown interface even when electron mobility is increased to $50,000$ cm$^{2}$V$^{-1}$s$^{-1}$ by gating voltage. Our results reveal the important roles of both carrier mobility and subband occupancy in tuning the quantum transport at oxide interfaces. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Comments: 22 pages, 4 figures

Journal ref: Phys. Rev. Materials 1, 011601(R) (2017)

Electrostatic tuning of magnetism at the conducting (111) (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ interface

Authors: V. V. Bal, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of applied back gate voltage, $V_g$. As is found in (111) LaAlO$_3$/SrTiO$_3$ interfaces, the low-field Hall coefficient is electron-like, but shows a sharp reductio… ▽ More We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of $(111)$ (La$_{0.3}$Sr$_{0.7}$)(Al$_{0.65}$Ta$_{0.35}$)/SrTiO$_3$ (LSAT/STO) as a function of applied back gate voltage, $V_g$. As is found in (111) LaAlO$_3$/SrTiO$_3$ interfaces, the low-field Hall coefficient is electron-like, but shows a sharp reduction in magnitude below $V_g \sim$ 20 V, indicating the presence of hole-like carriers in the system. This same value of $V_g$ correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. We believe our results can provide insight into the mechanism of magnetism in SrTiO$_3$ based systems. △ Less

Submitted 2 June, 2017; originally announced June 2017.

Comments: 5 pages, 3 figures

Journal ref: Appl. Phys. Lett. 111, 081604 (2017)

Low temperature physical properties of Co-35Ni-20Mo-10Cr alloy MP35N

Authors: J. Lu, V. J. Toplosky, R. E. Goddard, K. Han

Abstract: Multiphase Co-35Ni-20Mo-10Cr alloy MP35N is a high strength alloy with excellent corrosion resistance. Its applications span chemical, medical, and food processing industries. Thanks to its high modulus and high strength, it found applications in reinforcement of ultra-high field pulsed magnets. Recently, it has also been considered for reinforcement in superconducting wires used in ultra-high fie… ▽ More Multiphase Co-35Ni-20Mo-10Cr alloy MP35N is a high strength alloy with excellent corrosion resistance. Its applications span chemical, medical, and food processing industries. Thanks to its high modulus and high strength, it found applications in reinforcement of ultra-high field pulsed magnets. Recently, it has also been considered for reinforcement in superconducting wires used in ultra-high field superconducting magnets. For these applications, accurate measurement of its physical properties at cryogenic temperatures is very important. In this paper, physical properties including electrical resistivity, specific heat, thermal conductivity, and magnetization of as-received and aged samples are measured from 2 to 300 K. The electrical resistivity of the aged sample is slightly higher than the as-received sample, both showing a weak linear temperature dependence in the entire range of 2 - 300 K. The measured specific heat Cp of 0.43 J/g-K at 295 K agrees with a theoretical prediction, but is significantly smaller than the values in the literature. The thermal conductivity between 2 and 300 K is in good agreement with the literature which is only available above 77 K. Magnetic property of MP35N changes significantly with aging. The as-received sample exhibits Curie paramagnetism with a Curie constant C = 0.175 K. While the aged sample contains small amounts of a ferromagnetic phase even at room temperature. The measured MP35N properties will be useful for the engineering design of pulsed magnets and superconducting magnets using MP35N as reinforcement. △ Less

Submitted 13 April, 2017; originally announced April 2017.

Comments: 6 figures, 3 tables

Superconductivity and Frozen Electronic States at the (111) LaAlO$_3$/SrTiO$_3$ Interface

Authors: S. Davis, Z. Huang, K. Han, Ariando, T. Venkatesan, V. Chandrasekhar

Abstract: In spite of Anderson's theorem, disorder is known to affect superconductivity in conventional s-wave superconductors. In most superconductors, the degree of disorder is fixed during sample preparation. Here we report measurements of the superconducting properties of the two-dimensional gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) in the (111) crystal orientation, a s… ▽ More In spite of Anderson's theorem, disorder is known to affect superconductivity in conventional s-wave superconductors. In most superconductors, the degree of disorder is fixed during sample preparation. Here we report measurements of the superconducting properties of the two-dimensional gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) in the (111) crystal orientation, a system that permits \emph{in situ} tuning of carrier density and disorder by means of a back gate voltage $V_g$. Like the (001) oriented LAO/STO interface, superconductivity at the (111) LAO/STO interface can be tuned by $V_g$. In contrast to the (001) interface, superconductivity in these (111) samples is anisotropic, being different along different interface crystal directions, consistent with the strong anisotropy already observed other transport properties at the (111) LAO/STO interface. In addition, we find that the (111) interface samples "remember" the backgate voltage $V_F$ at which they are cooled at temperatures near the superconducting transition temperature $T_c$, even if $V_g$ is subsequently changed at lower temperatures. The low energy scale and other characteristics of this memory effect ($<1$ K) distinguish it from charge-trapping effects previously observed in (001) interface samples. △ Less

Submitted 4 April, 2017; originally announced April 2017.

Comments: 6 pages, 5 Figures

Journal ref: Phys. Rev. B 98, 024504 (2018)

Ultrafast terahertz responses in monolayer graphene

Authors: Q. Jin, H. M. Dong, K. Han, X. F. Wang

Abstract: We theoretically investigate the ultrafast terahertz(THz) properties of monolayer graphene. The analytical formulations of the photon carrier, electric polarization and optical current are obtained by solving the Bloch-equations in present of the ultrafast THz Gaussian pulse. Graphene shows a large nonlinear and ultrafast optical response at THz frequencies due to the gapless and relativistic Dira… ▽ More We theoretically investigate the ultrafast terahertz(THz) properties of monolayer graphene. The analytical formulations of the photon carrier, electric polarization and optical current are obtained by solving the Bloch-equations in present of the ultrafast THz Gaussian pulse. Graphene shows a large nonlinear and ultrafast optical response at THz frequencies due to the gapless and relativistic Dirac particles with nearly linear energy dispersion. It is found that the photon carrier density, electric polarization and optical current density increase with increasing the frequency of the THz pulse. These theoretical results are in agreement with recent experimental findings. This study confirms further that graphene exhibits important features and is relevant to the applications in the ultrafast THz fields. △ Less

Submitted 22 June, 2016; originally announced June 2016.

Comments: 6 pages

Controlling Kondo-like Scattering at the SrTiO3-based Interfaces

Authors: K. Han, N. Palina, S. W. Zeng, Z. Huang, C. J. Li, W. X. Zhou, D-Y. Wan, L. C. Zhang, X. Chi, R. Guo, J. S. Chen, T. Venkatesan, A. Rusydi, Ariando

Abstract: The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Ko… ▽ More The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasing the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti3+ ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti3+ ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface. △ Less

Submitted 12 May, 2016; originally announced May 2016.

Comments: 25 pages, 5 figure

Journal ref: Scientific Reports 6, 25455 (2016)

Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

Authors: Shengwei Zeng, Weiming Lü, Zhen Huang, Zhiqi Liu, Kun Han, Kalon Gopinadhan, Changjian Li, Rui Guo, Wenxiong Zhou, Haijiao Harsan Ma, Linke Jian, T Venkatesan, Ariando

Abstract: Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-as… ▽ More Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO$_3$/SrTiO$_3$ (LAO/STO) interface through ionic liquid-assisted electric field effect. By changing the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19380 cm$^2$/Vs are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces which exhibit quantum phenomena could be obtained by ionic liquid-assisted field effect. △ Less

Submitted 28 March, 2016; originally announced March 2016.

Comments: 22 pages, 4 figures, ACS Nano, March 09, 2016

Anisotropic, multi-carrier transport at the (111) LaAlO$_3$/SrTiO$_3$ interface

Authors: Samuel Davis, V. Chandrasekhar, Z. Huang, K. Han, Ariando, T. Venkatesan

Abstract: The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature ele… ▽ More The conducting gas that forms at the interface between LaAlO$_3$ and SrTiO$_3$ has proven to be a fertile playground for a wide variety of physical phenomena. The bulk of previous research has focused on the (001) and (110) crystal orientations. Here we report detailed measurements of the low-temperature electrical properties of (111) LAO/STO interface samples. We find that the low-temperature electrical transport properties are highly anisotropic, in that they differ significantly along two mutually orthogonal crystal orientations at the interface. While anisotropy in the resistivity has been reported in some (001) samples and in (110) samples, the anisotropy in the (111) samples reported here is much stronger, and also manifests itself in the Hall coefficient as well as the capacitance. In addition, the anisotropy is not present at room temperature and at liquid nitrogen temperatures, but only at liquid helium temperatures and below. The anisotropy is accentuated by exposure to ultraviolet light, which disproportionately affects transport along one surface crystal direction. Furthermore, analysis of the low-temperature Hall coefficient and the capacitance as a function of back gate voltage indicates that in addition to electrons, holes contribute to the electrical transport. △ Less

Submitted 22 August, 2016; v1 submitted 14 March, 2016; originally announced March 2016.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 95, 035127 (2017)

A chemical dissolution technique for challenging existing constitutive models of the densification process beneath an indentation imprint in amorphous silica

Authors: J. -P. Guin, V. Keryvin, L. Charleux, K. Han, J. -C. Sangleboeuf, M. Ferry

Abstract: The region of permanent densification beneath a Berkovich indentation imprint in silica glass is investigated using a novel chemical dissolution technique. The use of the similitude regime in sharp indentation testing allows one to record reliable data with a good spatial resolution that makes it possible to deal with low loads (typically below 10 mN) and crack-free imprints. The densified zone di… ▽ More The region of permanent densification beneath a Berkovich indentation imprint in silica glass is investigated using a novel chemical dissolution technique. The use of the similitude regime in sharp indentation testing allows one to record reliable data with a good spatial resolution that makes it possible to deal with low loads (typically below 10 mN) and crack-free imprints. The densified zone dissolves much quicker than the non densified regions. The analysis of the results, along the vertical axis, indicates that the densification zone is rather homogeneous with a steep transition to the non densified zone. The size of the densification zone, with respect to the initial free surface, is estimated to be around 1.9 the maximum penetration depth of the instrumented indentation test. These findings are compared with former experimental data and critically compared with the results of numerical simulations from selected constitutive equations and other numerical techniques from the literature. These comparisons highlight some advantages and disadvantages of existing modelings and thus call for further advanced progress on that matter. They nevertheless favor mostly the contribution of the densification process with respect to the plastic flow (volume conservative process) in creating a permanent imprint. △ Less

Submitted 25 January, 2016; originally announced January 2016.

Comments: submitted paper

The Effect of Polar Fluctuation and Lattice Mismatch on Carrier Mobility at Oxide Interfaces

Authors: Z. Huang, K. Han, S. W. Zeng, M. Motapothula, W. M. Lü, C. J. Li, W. X. Zhou, J. M. D. Coey, T. Venkatesan, Ariando

Abstract: Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35… ▽ More Since the discovery of two-dimensional electron gas (2DEG) at the oxide interface of LaAlO3/SrTiO3, improving carrier mobility has become an important issue for device applications. In this paper, by using an alternate polar perovskite insulator (La0.3Sr0.7)(Al0.65Ta0.35)O3 (LSAT) for reducing lattice mismatch from 3.0% to 1.0%, the low-temperature carrier mobility has been increased 30 fold to 35,000 cm2V-1s-1. Moreover, two critical thicknesses for the LSAT/SrTiO3 (001) interface are found: one at 5 unit cell for appearance of the 2DEG, the other at 12 unit cell for a peak in the carrier mobility. By contrast, the conducting (110) and (111) LSAT/STO interfaces only show a single critical thickness of 8 unit cells. This can be explained in terms of polar fluctuation arising from LSAT chemical composition. In addition to lattice mismatch and crystal symmetry at the interface, polar fluctuation arising from composition has been identified as an important variable to be tailored at the oxide interfaces to optimise the 2DEG transport. △ Less

Submitted 7 July, 2015; originally announced July 2015.

Comments: 17 pages, 4 figures

Journal ref: Nano Letters, March 09, 2016

Ti$_{1-x}$Au$_x$ Alloys: Hard Biocompatible Metals and Their Possible Applications

Authors: E. Svanidze, T. Besara, M. F. Ozaydin, Yan Xin, K. Han, H. Liang, T. Siegrist, E. Morosan

Abstract: The search for new hard materials is often challenging from both theoretical and experimental points of view. Furthermore, using materials for biomedical applications calls for alloys with high biocompatibility which are even more sparse. The Ti$_{1-x}$Au$_x$ ($0.22 \leq x \leq 0.8$) exhibit extreme hardness and strength values, elevated melting temperatures (compared to those of constituent eleme… ▽ More The search for new hard materials is often challenging from both theoretical and experimental points of view. Furthermore, using materials for biomedical applications calls for alloys with high biocompatibility which are even more sparse. The Ti$_{1-x}$Au$_x$ ($0.22 \leq x \leq 0.8$) exhibit extreme hardness and strength values, elevated melting temperatures (compared to those of constituent elements), reduced density compared to Au, high malleability, bulk metallicity, high biocompatibility, low wear, reduced friction, potentially high radio opacity, as well as osseointegration. All these properties render the Ti$_{1-x}$Au$_x$ alloys particularly useful for orthopedic, dental, and prosthetic applications, where they could be used as both permanent and temporary components. Additionally, the ability of Ti$_{1-x}$Au$_x$ alloys to adhere to ceramic parts could reduce the weight and cost of these components. △ Less

Submitted 27 October, 2014; originally announced October 2014.

Comments: 4 pages, 3 figures, 1 table

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

Authors: Z. Q. Liu, W. Lu, S. W. Zeng, J. W. Deng, Z. Huang, C. J. Li, M. Motapothula, W. M. Lü, L. Sun, K. Han, J. Q. Zhong, P. Yang, N. N. Bao, W. Chen, J. S. Chen, Y. P. Feng, J. M. D. Coey, T. Venkatesan, Ariando

Abstract: We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancem… ▽ More We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies. △ Less

Submitted 29 April, 2014; v1 submitted 28 April, 2014; originally announced April 2014.

Comments: 35 pages, 6 figures in the main text,13 figures in the supporting information. To be appearing in Advanced Materials Interfaces soon

Dominant role of oxygen vacancies in electrical properties of unannealed LaAlO3/SrTiO3 interfaces

Authors: Z. Q. Liu, L. Sun, Z. Huang, C. J. Li, S. W. Zeng, K. Han, W. M. Lü, T Venkatesan, Ariando

Abstract: We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experiment… ▽ More We report that in unannealed LaAlO3/SrTiO3 (LAO/STO) heterostructures the critical thickness for the appearance of the two-dimensional electron gas can be less than 4 unit cell (uc), the interface is conducting even for STO substrates with mixed terminations and the low-temperature resistance upturn in LAO/STO heterostructures with thick LAO layers strongly depends on laser fluence. Our experimental results provide fundamental insights into the different roles played by oxygen vacancies and polarization catastrophe in the two-dimensional electron gas in crystalline LAO/STO heterostructures. △ Less

Submitted 21 January, 2014; v1 submitted 20 January, 2014; originally announced January 2014.

Comments: 4 pages, 3 figures. To be appearing in Journal of Applied Physics

Journal ref: Journal of Applied Physics 115, 054303 (2014)

Chirality-Selective Excitation of Coherent Phonons in Carbon Nanotubes

Authors: J. -H. Kim, K. -J. Han, N. -J. Kim, K. -J. Yee, Y. -S. Lim, G. D. Sanders, C. J. Stanton, L. G. Booshehri, E. H. Haroz, J. Kono

Abstract: Using pre-designed trains of femtosecond optical pulses, we have selectively excited coherent phonons of the radial breathing mode of specific-chirality single-walled carbon nanotubes within an ensemble sample. By analyzing the initial phase of the phonon oscillations, we prove that the tube diameter initially increases in response to ultrafast photoexcitation. Furthermore, from excitation profi… ▽ More Using pre-designed trains of femtosecond optical pulses, we have selectively excited coherent phonons of the radial breathing mode of specific-chirality single-walled carbon nanotubes within an ensemble sample. By analyzing the initial phase of the phonon oscillations, we prove that the tube diameter initially increases in response to ultrafast photoexcitation. Furthermore, from excitation profiles, we demonstrate that an excitonic absorption peak of carbon nanotubes periodically oscillates as a function of time when the tube diameter undergoes radial breathing mode oscillations. △ Less

Submitted 19 December, 2008; v1 submitted 15 May, 2008; originally announced May 2008.

Comments: 4 pages, 4 figures

Journal ref: Physical Review Letters 102, 037402 (2009)