Showing 1–41 of 41 results for author: Stanton, C J

Separation of interface and substrate carrier dynamics at a heterointerface based on coherent optical phonons

Authors: Kunie Ishioka, Ethan Angerhoffer, Christopher J. Stanton, Gerson Mette, Kerstin Volz, Wolfgang Stolz, Ulrich Höfer

Abstract: Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The p… ▽ More Transient reflectivity spectroscopy is widely used to study ultrafast carrier- and phonon-dynamics in semiconductors. In their heterostructures, it is often not straightforward to distinguish contributions to the signal from the various layers. In this work, we perform transient reflectivity measurements on lattice-matched GaP/Si(001) using a near infrared pulse, to which GaP is transparent. The pump laser pulse can generate coherent longitudinal optical (LO) phonons both in the GaP overlayer as well as in the Si substrate which have distinct frequencies. This enables us to track the amplitude of the respective signal contributions as a function of GaP layer thickness $d$. The Si phonon amplitude in the signal exhibits an oscillatory behavior with increasing $d$. This can be quantitatively explained by the interference of the probe light reflected at the air/GaP/Si heterointerface. Based on this knowledge, we can then separate the interface- and the substrate-contributions in the carrier-induced non-oscillatory transient reflectivity signal. The obtained interface signal provides evidence for ultrafast carrier injection from the Si substrate into the GaP overlayer. This is also corroborated by examining the deviation of the polarization-dependence of the GaP coherent optical phonon signal from that of the bulk semiconductor. △ Less

Submitted 8 October, 2021; originally announced October 2021.

Comments: 11 pages, 7 figures

Light-Activated Nuclear Spin Polarization in Dilute Ferromagnetic (Ga,Mn)As

Authors: John T. Tokarski III, Clifford R Bowers, Sunil K. Thapa, Christopher J. Stanton, Xinyu Liu, Jacek Furdyna, Brenden Magill, Giti A. Khodaparast

Abstract: We study light-induced nuclear spin-polarization in a thin film of Ga1-xMnxAs (x 0.04), a dilute ferromagnetic semiconductor, grown on a GaAs substrate. High-field inductively-detected Ga-71 NMR was performed with samples immersed in superfluid He to investigate the effects of continuous-wave near band-edge optical illumination on lattice nuclear spins in the ferromagnetic phase. The photon energy… ▽ More We study light-induced nuclear spin-polarization in a thin film of Ga1-xMnxAs (x 0.04), a dilute ferromagnetic semiconductor, grown on a GaAs substrate. High-field inductively-detected Ga-71 NMR was performed with samples immersed in superfluid He to investigate the effects of continuous-wave near band-edge optical illumination on lattice nuclear spins in the ferromagnetic phase. The photon energy dependence of the light-induced NMR signals for GaAs and the GaMnAs film samples were recorded using circularly polarized light. Interpretation of the data was guided by electronic band structure calculations using the k.p method in the presence of an external magnetic field using the modified 8-band Pidgeon-Brown model. The photon energy dependence of the NMR transition intensity exhibited a shift of the absorption band edge; invariance with respect to the sense of helicity of the exciting light; and an absence of oscillations in the photon energy dependence, all of which are consistent with theoretical predictions. The dynamics of the optically activated NMR experiments was investigated by variable optical intensity studies and light/dark modulated optical pumping experiments. This is because doping with Mn (a p-type dopant) can push the Fermi level deep into the valence bands and block the optical transitions (Burstein-Moss effect) needed to create spin polarized electrons. Additionally, the calculated enhancement of the conduction electron g-factor by over two orders of magnitude is expected to quench the electron-nuclear spin angular moment transfer, which impedes the hyperpolarization of lattice nuclei. Experiments with variable light intensity and optical gating reveal a mechanism consistent with light-induced quadrupolar relaxation, a process that will certainly interfere with the optical transfer and storage of quantum information in the lattice nuclear spin states in this material. △ Less

Submitted 9 September, 2021; v1 submitted 16 August, 2020; originally announced August 2020.

Comments: Assignment of the experimental optically pumped NMR signals to the Ga(Mn)As film layer, as reported in this manuscript, is probably incorrect and a revised interpretation is currently under consideration

Experimental Measurements of Effective Mass in Near Surface InAs Quantum Wells

Authors: Joseph Yuan, Mehdi Hatefipour, Brenden A. Magill, William Mayer, Matthieu C. Dartiailh, Kasra Sardashti, Kaushini S. Wickramasinghe, Giti A. Khodaparast, Yasuhiro H. Matsuda, Yoshimitsu Kohama, Zhuo Yang, Sunil Thapa, Christopher J. Stanton, Javad Shabani

Abstract: Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the… ▽ More Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological superconductivity. In this work, we present magnetotransport properties of two-dimensional electron gases confined to an indium arsenide quantum well near the surface. The electron mass extracted from the envelope of the Shubnikov-de Haas oscillations shows an average effective mass $m^{*}$ = 0.04 at low magnetic field. Complementary to our magnetotransport study, we employed cyclotron resonance measurements and extracted the electron effective mass in the ultra high magnetic field regime. Our measurements show that the effective mass depends on magnetic field in this regime. The data can be understood by considering a model that includes non-parabolicity of the indium arsenide conduction bands. △ Less

Submitted 18 May, 2020; v1 submitted 6 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 101, 205310 (2020)

Valley and Zeeman Splittings in Multilayer Epitaxial Graphene Revealed by Circular Polarization Resolved Magneto-infrared Spectroscopy

Authors: Y. Jiang, Z. Lu, J. Gigliotti, A. Rustagi, L. Chen, C. Berger, W. A. de Heer, C. J. Stanton, D. Smirnov, Z. Jiang

Abstract: Circular polarization resolved magneto-infrared studies of multilayer epitaxial graphene (MEG) are performed using tunable quantum cascade lasers in high magnetic fields up to 17.5 T. Landau level (LL) transitions in the monolayer and bilayer graphene inclusions of MEG are resolved, and considerable electron-hole asymmetry is observed in the extracted electronic band structure. For monolayer graph… ▽ More Circular polarization resolved magneto-infrared studies of multilayer epitaxial graphene (MEG) are performed using tunable quantum cascade lasers in high magnetic fields up to 17.5 T. Landau level (LL) transitions in the monolayer and bilayer graphene inclusions of MEG are resolved, and considerable electron-hole asymmetry is observed in the extracted electronic band structure. For monolayer graphene, a four-fold splitting of the $n=0$ to $n=1$ LL transition is evidenced and attributed to the lifting of the valley and spin degeneracy of the zeroth LL and the broken electron-hole symmetry. The magnetic field dependence of the splitting further reveals its possible mechanisms. The best fit to experimental data yields effective $g$-factors, $g^*_{VS}=6.7$ and $g^*_{ZS}=4.8$, for the valley and Zeeman splitting, respectively. △ Less

Submitted 14 October, 2019; v1 submitted 3 September, 2019; originally announced September 2019.

Comments: One reference added in this arxiv version

Journal ref: Nano Lett. 19, 7043 (2019)

Energy dependent amplitude of Brillouin oscillations in GaP

Authors: Andrey Baydin, Rustam Gatamov, Halina Krzyzanowska, Christopher J. Stanton, Norman Tolk

Abstract: Gallium phosphide is an important indirect band gap material with variety of applications in optics ranging from LEDs to applications in GaP/Si based solar cells. We investigated GaP using ultrafast, pump-probe coherent acoustic phonon spectroscopy (time-domain Brillouin scattering). We measured the dependence of the amplitude of the differential reflectivity as modulated by coherent acoustic phon… ▽ More Gallium phosphide is an important indirect band gap material with variety of applications in optics ranging from LEDs to applications in GaP/Si based solar cells. We investigated GaP using ultrafast, pump-probe coherent acoustic phonon spectroscopy (time-domain Brillouin scattering). We measured the dependence of the amplitude of the differential reflectivity as modulated by coherent acoustic phonons (CAPs) as a function of laser probe energy and found that the amplitude of the coherent phonon oscillations varies non-monotonically near the direct gap transition at the $Γ$ point. A theoretical model is developed which quantitatively explains the experimental data and shows that one can use coherent phonon spectroscopy to provide detailed information about the electronic structure, the dielectric function and optical transitions in indirect band gap materials. Our calculations show that the modelling of experimental results is extremely sensitive to the wavelength dependent dielectric function and its derivatives. △ Less

Submitted 17 March, 2019; originally announced March 2019.

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(001) heterointerfaces

Authors: Kunie Ishioka, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, Hrvoje Petek, Ulrich Höfer, Christopher J. Stanton

Abstract: Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupl… ▽ More Thin GaP films can be grown on an exact Si(001) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP opverlayer and in the Si substrate. The coupling of the GaP LO phonons with photoexcited plasma is reduced significantly with decreasing the GaP layer thickness from 56 to 16 nm due to the quasi-two-dimensional confinement of the plasma. The same laser pulse can also generate coherent longitudinal acoustic (LA) phonons in the form of a strain pulse. The strain induces not only a periodic modulation in the optical reflectivity as they propagate in the semiconductors, but also a sharp spike when it arrives at the GaP layer boundaries. The acoustic pulse induced at the GaP/Si interface is remarkably stronger than that at the Si surface, suggesting a possible application of the GaP/Si heterostructure as an opto-acoustic transducer. The amplitude and the phase of the reflectivity modulation varies with the GaP layer thickness, which can be understood in terms of the interference caused by the multiple acoustic pulses generated at the top surface and at the buried interface. △ Less

Submitted 25 October, 2018; originally announced October 2018.

Comments: 9 pages, 9 figures

Nonlinear Photoelasticity to Explicate Acoustic Dephasing Dynamics

Authors: S. Lee, H. Jeong, H. Lee, A. J. Minnich, S. -R. Jeon, T. H. Chung, C. J. Stanton, Y. D. Jho

Abstract: Detection and controlling of acoustic (AC) phonon phase have been strenuous tasks although such capability is crucial for further manipulating thermal properties. Here, we present a versatile formalism for tracing AC nanowaves with arbitrary strain compositions by incorporating the nonlinear photoelasticity (PE) into ultrafast acoustics where broad AC spectrum encompassing thermally important THz… ▽ More Detection and controlling of acoustic (AC) phonon phase have been strenuous tasks although such capability is crucial for further manipulating thermal properties. Here, we present a versatile formalism for tracing AC nanowaves with arbitrary strain compositions by incorporating the nonlinear photoelasticity (PE) into ultrafast acoustics where broad AC spectrum encompassing thermally important THz frequency range should be collected far beyond Brillouin frequency. The initial AC phase upon displacive carrier generation could be inherently varied depending on the bipolar AC compositions by implementing externally biased piezoelectric diodes. The importance of adopting nonlinear PE is then manifested from the transient phase shift either abrupt at the point of diffuse surface scattering or gradual during phonon-phonon or phonon-electron scattering events based on which the ratio of nonlinear to linear PE coefficient is experimentally extracted as a function of the detection probe energy, reaching 0.98 slightly below the bandgap. As the probing energy is rather set away from the bandgap, AC phase is completely invariant with any scattering events, exhibiting the conventional trend at Brillouin frequency in linear regime. Under potent influence of nonlinear PE, the AC dephasing time during the propagation are quantified as a function of AC wavepacket size and further correlated with intrinsic and extrinsic AC scattering mechanisms in electron reservoir. △ Less

Submitted 17 August, 2022; v1 submitted 6 March, 2018; originally announced March 2018.

Comments: In the second paragraph of page 2, the dependence of AC phonon propagation direction was omitted in the mathematical formula of differential reflectivity spectra which is the basis for deriving equations 2 and 3. Therefore, there were errors in phase and amplitude values of figures 3 and 4, analyzed based on equations 2 and 3

Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer

Authors: W. Yu, V. Clericò, C. Hernández Fuentevilla, X. Shi, Y. Jiang, D. Saha, W. K. Lou, K. Chang, D. H. Huang, G. Gumbs, D. Smirnov, C. J. Stanton, Z. Jiang, V. Bellani, Y. Meziani, E. Diez, W. Pan, S. D. Hawkins, J. F. Klem

Abstract: Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hol… ▽ More Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the energy separation between the single particle states. Here we report on electrical transport measurements on spatially separated two-dimensional electron and hole gases with nominally degenerate energy subbands, realized in an InAs(10 nm)/GaSb(5 nm) coupled quantum well. We observe a narrow and intense maximum (~500 kΩ) in the four-terminal resistivity in the charge neutrality region, separating the electron-like and hole-like regimes, with a strong activated temperature-dependence above T = 7 K and perfect stability against quantizing magnetic fields. By quantitatively comparing our data with early theoretical predictions, we show that such unexpectedly large resistance in our nominally zero-gap semi-metal system is probably due to the formation of an excitonic insulator state. △ Less

Submitted 25 January, 2017; originally announced January 2017.

Sub-picosecond acoustic pulses at buried GaP/Si interfaces

Authors: Kunie Ishioka, Avinash Rustagi, Andreas Beyer, Wolfgang Stolz, Kerstin Volz, Ulrich Hoefer, Hrvoje Petek, Christopher J. Stanton

Abstract: We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the re… ▽ More We report on the optical generation and detection of ultrashort acoustic pulses that propagate in three-dimensional semiconductor crystals. Photoexcitaiton of lattice-matched GaP layers grown on Si(001) gives rise to a sharp spike in transient reflectivity due to the acoustic pulse generated at the GaP/Si interface and detected at the GaP surface and vice versa. The extremely short width of the reflectivity spike, 0.5 ps, would translate to a spatial extent of 3 nm or 10 atomic bilayers, which is comparable with the width of the intermixing layer at the GaP/Si interface. The reflectivity signals are also modified by quasi-periodic Brillouin oscillations of GaP and Si arising from the acoustic pulses during the propagation in the crystals. The present results demonstrate the potential application of the simple optical pump-probe scheme in the nondestructive evaluation of the buried semiconductor interface quality. △ Less

Submitted 27 July, 2017; v1 submitted 4 December, 2016; originally announced December 2016.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 111, 062105 (2017)

Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy

Authors: Martin Schmid, Kunie Ishioka, Andreas Beyer, Benedikt P. Klein, Claudio K. Krug, Malte Sachs, Hrvoje Petek, Christopher J. Stanton, Wolfgang Stolz, Kerstin Volz, J. Michael Gottfried, Ulrich Höfer

Abstract: We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical model… ▽ More We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces. △ Less

Submitted 11 November, 2016; originally announced November 2016.

Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy

Authors: Y. Jiang, S. Thapa, G. D. Sanders, C. J. Stanton, Q. Zhang, J. Kono, W. K. Lou, K. Chang, S. D. Hawkins, J. F. Klem, W. Pan, D. Smirnov, Z. Jiang

Abstract: We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inve… ▽ More We perform a magneto-infrared spectroscopy study of the semiconductor to semimetal transition of InAs/GaSb double quantum wells from the normal to the inverted state. We show that owing to the low carrier density of our samples (approaching the intrinsic limit), the magneto-absorption spectra evolve from a single cyclotron resonance peak in the normal state to multiple absorption peaks in the inverted state with distinct magnetic field dependence. Using an eight-band Pidgeon-Brown model, we explain all the major absorption peaks observed in our experiment. We demonstrate that the semiconductor to semimetal transition can be realized by manipulating the quantum confinement, the strain, and the magnetic field. Our work paves the way for band engineering of optimal InAs/GaSb structures for realizing novel topological states as well as for device applications in the terahertz regime. △ Less

Submitted 18 October, 2016; originally announced October 2016.

Comments: 15 pages, 9 figures

Journal ref: Phys. Rev. B 95, 045116 (2017)

Intrinsic coherent acoustic phonons in indirect band gap semiconductors Si and GaP

Authors: Kunie Ishioka, Avinash Rustagi, Ulrich Hoefer, Hrvoje Petek, Christopher J. Stanton

Abstract: We report on the intrinsic optical generation and detection of coherent acoustic phonons at (001)-oriented bulk Si and GaP without metallic phonon transducer structures. Photoexcitation by a 3.1-eV laser pulse generates a normal strain pulse within the $\sim$100-nm penetration depth in both semiconductors. The subsequent propagation of the strain pulse into the bulk is detected with a delayed opti… ▽ More We report on the intrinsic optical generation and detection of coherent acoustic phonons at (001)-oriented bulk Si and GaP without metallic phonon transducer structures. Photoexcitation by a 3.1-eV laser pulse generates a normal strain pulse within the $\sim$100-nm penetration depth in both semiconductors. The subsequent propagation of the strain pulse into the bulk is detected with a delayed optical probe as a periodic modulation of the optical reflectivity. Our theoretical model explains quantitatively the generation of the acoustic pulse via the deformation potential electron-phonon coupling and detection in terms of the spatially and temporally dependent photoelastic effect for both semiconductors. Comparison with our theoretical model reveals that the experimental strain pulses have finite build-up times of 1.2 and 0.4 ps for GaP and Si, which are comparable with the time required for the photoexcited electrons to transfer to the lowest X valley through intervalley scattering. The deformation potential coupling related to the acoustic pulse generation for GaP is estimated to be twice as strong as that for Si from our experiments, in agreement with a previous theoretical prediction. △ Less

Submitted 27 July, 2017; v1 submitted 2 August, 2016; originally announced August 2016.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 95, 035205 (2017)

Terahertz radiation from accelerating charge carriers in graphene under ultrafast photoexcitation

Authors: Avinash Rustagi, C. J. Stanton

Abstract: We study the generation of THz radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a DC electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation within a relaxation time approximation. We include the time-dependent gene… ▽ More We study the generation of THz radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a DC electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation within a relaxation time approximation. We include the time-dependent generation of carriers by the pump pulse by solving for the carrier generation rate using the Bloch equations in the rotating wave approximation (RWA). The linearly polarized pump pulse generates an anisotropic distribution of photoexcited carriers in the $k_x-k_y$ plane. The collision integral in the Boltzmann equation includes a term that leads to the \textit{thermalization} of carriers via carrier-carrier scattering to an effective temperature above the lattice temperature, as well as a \textit{cooling} term which leads to energy relaxation via inelastic carrier-phonon scattering. The radiated signal is proportional to the time derivative of the transient current density. In spite of the fact that the magnitude of the velocity is the same for all the carriers in graphene, there is still emitted radiation from the photoexcited charge carriers with frequency components in the THz range due to a change in the \textit{direction} of velocity of the photoexcited carriers in the external electric field as well as \textit{cooling} of the photoexcited carriers on a sub-picosecond time scale. △ Less

Submitted 8 July, 2016; originally announced July 2016.

Comments: 12 pages, 14 figures

Journal ref: Phys. Rev. B 94, 195207 (2016)

External Modulation and Switching of Acoustic Phonons: Comparative Roles of Potential Distributions

Authors: H. Jeong, Y. D. Jho, S. H. Rhim, K. J. Yee, J. P. Shim, D. S. Lee, J. W. Ju, J. H. Baek, C. J. Stanton

Abstract: Acoustic phonons can be coherently generated by ultrafast displacive screening of potential gradients, often enhanced by the strong built-in piezoelectric fields, in wurtzite semiconductors. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and only longitudinal acoustic (LA) mode is generated. We show that e… ▽ More Acoustic phonons can be coherently generated by ultrafast displacive screening of potential gradients, often enhanced by the strong built-in piezoelectric fields, in wurtzite semiconductors. In such structures, transverse symmetry within the c plane hinders both the generation and detection of the transverse acoustic (TA) modes, and only longitudinal acoustic (LA) mode is generated. We show that even for c-GaN, the application of asymmetric potential distributions in the c plane can break the symmetry and selection rules, thus switching on the normally forbidden TA mode. This is in contrast to the LA mode, the strength of which varies with the symmetric potential distributions. By comparing transient differential reflectivity spectra in structures with and without asymmetric potential distributions, the role of the electrically attained anisotropy was further revealed by the digitized appearance of the TA mode, in clear contrast to the monotonic LA mode, and by modulations in the propagation velocities, optical birefringence, and geometrically varying sensitivities, the underlying mechanisms of which are modeled by electric-field-dependent perturbations of the dielectric tensors, incorporating the results of elastic modulations. △ Less

Submitted 25 June, 2015; originally announced June 2015.

Theory of magneto-optical properties of core-shell spherical quantum dots doped with radial-position-controlled magnetic impurities

Authors: G. D. Sanders, C. J. Stanton

Abstract: We present a theory for the electronic and magneto-optical properties of spherical quantum dots consisting of an inner core surrounded by an outer shell. This core-shell quantum dot is doped by magnetic Mn impurities all of which are implanted at a preselected radius on a spherical surface within the dot. The spherical symmetry of the dot is broken by the application of an external magnetic field.… ▽ More We present a theory for the electronic and magneto-optical properties of spherical quantum dots consisting of an inner core surrounded by an outer shell. This core-shell quantum dot is doped by magnetic Mn impurities all of which are implanted at a preselected radius on a spherical surface within the dot. The spherical symmetry of the dot is broken by the application of an external magnetic field. The electronic states in the presence of a magnetic field are treated in an effective mass model which includes the s-d and p-d exchange interaction with localized Mn d electrons. The strain in the quantum dot due to lattice mismatch between core and shell regions is assumed to be pseudomorphic and the effect of this strain field on the electronic states is also included. The optical properties of the quantum dot are computed using the effective mass electronic states and Fermi's golden rule. △ Less

Submitted 27 August, 2015; v1 submitted 3 April, 2015; originally announced April 2015.

Comments: This paper has been withdrawn by the author due to misleading results that must be corrected

Transverse Acoustic Phonon Transistor Based on Asymmetric Potential Distribution

Authors: H. Jeong, Y. D. Jho, C. J. Stanton

Abstract: We experimentally demonstrate a transverse acoustic (TA) phonon transistor. Phonons are coherently initiated by femtosecond photocarrier screening on potential gradients. Although translational symmetry within the isotropic plane normally prohibits optical generation of TA phonons, we show that the combined application of an external bias in the vertical and lateral directions can break the select… ▽ More We experimentally demonstrate a transverse acoustic (TA) phonon transistor. Phonons are coherently initiated by femtosecond photocarrier screening on potential gradients. Although translational symmetry within the isotropic plane normally prohibits optical generation of TA phonons, we show that the combined application of an external bias in the vertical and lateral directions can break the selection rules, generating the forbidden TA mode. The amplitude and on-state time of the TA mode can be modulated by the external field strength and size of the laterally biased region. The observed frequency shift with an external bias as well as the strong geometrical dependence confirm the role of the asymmetric potential distribution in electrically manipulating the crystal symmetry to control and activate the transistor. △ Less

Submitted 18 August, 2014; originally announced August 2014.

Comments: 5 pages, 5 figures

Origin of coherent G band phonon spectra in single wall carbon nanotubes

Authors: A. R. T. Nugraha, E. H. Hasdeo, G. D. Sanders, C. J. Stanton, R. Saito

Abstract: Coherent phonons in single wall carbon nanotubes (SWNTs) are observed as oscillations of the differential absorption coefficient as a function of time by means of pump-probe spectroscopy. For the radial breathing mode (RBM) of a SWNT, the coherent phonon signal is understood to be a result of the modulated diameter-dependent energy gaps due to the coherent RBM phonon oscillations. However, this me… ▽ More Coherent phonons in single wall carbon nanotubes (SWNTs) are observed as oscillations of the differential absorption coefficient as a function of time by means of pump-probe spectroscopy. For the radial breathing mode (RBM) of a SWNT, the coherent phonon signal is understood to be a result of the modulated diameter-dependent energy gaps due to the coherent RBM phonon oscillations. However, this mechanism might not be the dominant contribution to other phonon modes in the SWNT. In particular, for the G band phonons, which correspond to bond-stretching motions, we find that the modulation of the interatomic dipole matrix element gives rise to a strong coherent G band phonon intensity comparable to the coherent RBM phonon intensity. We also further discuss the dependence of coherent G band and RBM phonon amplitudes on the laser excitation pulse width. △ Less

Submitted 6 August, 2014; v1 submitted 4 August, 2014; originally announced August 2014.

Comments: submitted to Phys. Rev. B

Ultrafast Generation of Fundamental and Multiple-order Phonon Excitations in Highly-Enriched (6,5) Single-Wall Carbon Nanotubes

Authors: Y. -S. Lim, A. R. T. Nugraha, S. -J. Cho, M. -Y. Noh, E. -J. Yoon, H. Liu, J. -H. Kim, H. Telg, E. H. Haroz, G. D. Sanders, S. -H. Baik, H. Kataura, S. K. Doorn, C. J. Stanton, R. Saito, J. Kono, T. Joo

Abstract: Using a macroscopic ensemble of highly-enriched (6,5) single-wall carbon nanotubes, combined with high signal-to-noise ratio, time-dependent differential transmission spectroscopy, we have generated vibrational modes in an ultrawide spectral range (10-3000 cm^{-1}). A total of fourteen modes were clearly resolved and identified, including fundamental modes of A, E1, and E2 symmetries and their com… ▽ More Using a macroscopic ensemble of highly-enriched (6,5) single-wall carbon nanotubes, combined with high signal-to-noise ratio, time-dependent differential transmission spectroscopy, we have generated vibrational modes in an ultrawide spectral range (10-3000 cm^{-1}). A total of fourteen modes were clearly resolved and identified, including fundamental modes of A, E1, and E2 symmetries and their combinational modes involving two and three phonons. Through comparison with CW Raman spectra as well as calculations based on an extended tight-binding model, we were able to identify all the observed peaks and determine the frequencies of the individual and combined modes. We provide a full summary of phonon frequencies for (6,5) nanotubes that can serve as a basic reference with which to refine our understanding of nanotube phonon spectra as well as a testbed for new theoretical models. △ Less

Submitted 14 December, 2013; originally announced December 2013.

Comments: 8 pages, 3 figures

Journal ref: Nano Letters 14, 1426 (2014)

Excitonic effects on coherent phonon dynamics in single wall carbon nanotubes

Authors: Ahmad R. T. Nugraha, Eric Rosenthal, Eddwi H. Hasdeo, Gary D. Sanders, Christopher J. Stanton, Mildred S. Dresselhaus, Riichiro Saito

Abstract: We discuss how excitons can affect the generation of coherent radial breathing modes in ultrafast spectroscopy of single wall carbon nanotubes. Photoexcited excitons can be localized spatially and give rise to a spatially distributed driving force in real space which involves many phonon wavevectors of the exciton-phonon interaction. The equation of motion for the coherent phonons is modeled pheno… ▽ More We discuss how excitons can affect the generation of coherent radial breathing modes in ultrafast spectroscopy of single wall carbon nanotubes. Photoexcited excitons can be localized spatially and give rise to a spatially distributed driving force in real space which involves many phonon wavevectors of the exciton-phonon interaction. The equation of motion for the coherent phonons is modeled phenomenologically by the Klein-Gordon equation, which we solve for the oscillation amplitudes as a function of space and time. By averaging the calculated amplitudes per nanotube length, we obtain time-dependent coherent phonon amplitudes that resemble the homogeneous oscillations that are observed in some pump-probe experiments. We interpret this result to mean that the experiments are only able to see a spatial average of coherent phonon oscillations over the wavelength of light in carbon nanotubes and the microscopic details are averaged out. Our interpretation is justified by calculating the time-dependent absorption spectra resulting from the macroscopic atomic displacements induced by the coherent phonon oscillations. The calculated coherent phonon spectra including excitonic effects show the experimentally observed symmetric peaks at the nanotube transition energies in contrast to the asymmetric peaks that would be obtained if excitonic effects were not included. △ Less

Submitted 20 November, 2013; v1 submitted 7 May, 2013; originally announced May 2013.

Comments: submitted to Phys. Rev. B on 7 May 2013, revised on 17 July and 13 August 2013, published 30 August 2013

Journal ref: Phys. Rev. B 88, 075440 (2013)

Effect of a magnetic field on the quasiparticle recombination in superconductors

Authors: Xiaoxiang Xi, J. Hwang, C. Martin, D. H. Reitze, C. J. Stanton, D. B. Tanner, G. L. Carr

Abstract: Quasiparticle recombination in a superconductor with an s-wave gap is typically dominated by a phonon bottleneck effect. We have studied how a magnetic field changes this recombination process in metallic thin-film superconductors, finding that the quasiparticle recombination process is significantly slowed as the field increases. While we observe this for all field orientations, we focus here on… ▽ More Quasiparticle recombination in a superconductor with an s-wave gap is typically dominated by a phonon bottleneck effect. We have studied how a magnetic field changes this recombination process in metallic thin-film superconductors, finding that the quasiparticle recombination process is significantly slowed as the field increases. While we observe this for all field orientations, we focus here on the results for a field applied parallel to the thin film surface, minimizing the influence of vortices. The magnetic field disrupts the time-reversal symmetry of the pairs, giving them a finite lifetime and decreasing the energy gap. The field could also polarize the quasiparticle spins, producing different populations of spin-up and spin-down quasiparticles. Both processes favor slower recombination; in our materials we conclude that strong spin-orbit scattering reduces the spin polarization, leaving the field-induced gap reduction as the dominant effect and accounting quantitatively for the observed recombination rate reduction. △ Less

Submitted 28 November, 2012; v1 submitted 14 November, 2012; originally announced November 2012.

Journal ref: Phys. Rev. B 87, 140502(R) (2013)

Coherent Phonons in Carbon Nanotubes and Graphene

Authors: J. -H. Kim, A. R. T. Nugraha, L. G. Booshehri, E. H. Hároz, K. Sato, G. D. Sanders, K. -J. Yee, Y. -S. Lim, C. J. Stanton, R. Saito, J. Kono

Abstract: We review recent studies of coherent phonons (CPs) corresponding to the radial breathing mode (RBM) and G-mode in single-wall carbon nanotubes (SWCNTs) and graphene. Because of the bandgap-diameter relationship, RBM-CPs cause bandgap oscillations in SWCNTs, modulating interband transitions at terahertz frequencies. Interband resonances enhance CP signals, allowing for chirality determination. Usin… ▽ More We review recent studies of coherent phonons (CPs) corresponding to the radial breathing mode (RBM) and G-mode in single-wall carbon nanotubes (SWCNTs) and graphene. Because of the bandgap-diameter relationship, RBM-CPs cause bandgap oscillations in SWCNTs, modulating interband transitions at terahertz frequencies. Interband resonances enhance CP signals, allowing for chirality determination. Using pulse shaping, one can selectively excite speci!c-chirality SWCNTs within an ensemble. G-mode CPs exhibit temperature-dependent dephasing via interaction with RBM phonons. Our microscopic theory derives a driven oscillator equation with a density-dependent driving term, which correctly predicts CP trends within and between (2n+m) families. We also find that the diameter can initially increase or decrease. Finally, we theoretically study the radial breathing like mode in graphene nanoribbons. For excitation near the absorption edge, the driving term is much larger for zigzag nanoribbons. We also explain how the armchair nanoribbon width changes in response to laser excitation. △ Less

Submitted 27 May, 2012; originally announced May 2012.

Comments: 48 pages, 41 figures

Journal ref: Chemical Physics 413, 55 (2013)

Coherent radial breathing like phonons in graphene nanoribbons

Authors: G. D. Sanders, A. R. T. Nugraha, R. Saito, C. J. Stanton

Abstract: We have developed a microscopic theory for the generation and detection of coherent phonons in armchair and zigzag carbon nanoribbons using an extended tight-binding model for the electronic states and a valence force field model for the phonons. The coherent phonon amplitudes satisfy a driven oscillator equation with the driving term depending on photoexcited carrier density. We examine the coher… ▽ More We have developed a microscopic theory for the generation and detection of coherent phonons in armchair and zigzag carbon nanoribbons using an extended tight-binding model for the electronic states and a valence force field model for the phonons. The coherent phonon amplitudes satisfy a driven oscillator equation with the driving term depending on photoexcited carrier density. We examine the coherent phonon radial breathing like mode amplitudes as a function of excitation energies and nanoribbon types. For photoexcitation near the optical absorption edge the coherent phonon driving term for the radial breathing like mode is much larger for zigzag nanoribbons where transitions between localized edge states provide the dominant contribution to the coherent phonon driving term. Using an effective mass theory, we explain how the armchair nanoribbon width changes in response to laser excitation. △ Less

Submitted 2 May, 2012; v1 submitted 25 January, 2012; originally announced January 2012.

Comments: 20 pages, 23 figures

Journal ref: Physical Review B, 85, 205401 (2012)

Circular-Polarization Dependent Cyclotron Resonance in Large-Area Graphene in Ultrahigh Magnetic Fields

Authors: L. G. Booshehri, C. H. Mielke, D. G. Rickel, S. A. Crooker, Q. Zhang, L. Ren, E. H. Haroz, A. Rustagi, C. J. Stanton, Z. Jin, Z. Sun, Z. Yan, J. M. Tour, J. Kono

Abstract: Using ultrahigh magnetic fields up to 170 T and polarized midinfrared radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron resonance in large-area graphene grown by chemical vapor deposition. Circular-polarization dependent studies reveal strong p-type doping for as-grown graphene, and the dependence of the cyclotron resonance on radiation wavelength allows for a determin… ▽ More Using ultrahigh magnetic fields up to 170 T and polarized midinfrared radiation with tunable wavelengths from 9.22 to 10.67 um, we studied cyclotron resonance in large-area graphene grown by chemical vapor deposition. Circular-polarization dependent studies reveal strong p-type doping for as-grown graphene, and the dependence of the cyclotron resonance on radiation wavelength allows for a determination of the Fermi energy. Thermal annealing shifts the Fermi energy to near the Dirac point, resulting in the simultaneous appearance of hole and electron cyclotron resonance in the magnetic quantum limit, even though the sample is still p-type, due to graphene's linear dispersion and unique Landau level structure. These high-field studies therefore allow for a clear identification of cyclotron resonance features in large-area, low-mobility graphene samples. △ Less

Submitted 14 January, 2012; v1 submitted 20 October, 2011; originally announced October 2011.

Comments: 9 pages, 3 figures

Journal ref: Physical Review B 85, 205407 (2012)

Coherent Phonon Dynamics in Short-Period InAs/GaSb Superlattices

Authors: G. T. Noe, H. J. Haugan, G. J. Brown, G. D. Sanders, C. J. Stanton, J. Kono

Abstract: We have performed ultrafast pump-probe spectroscopy studies on a series of InAs/GaSb-based short-period superlattice (SL) samples with periods ranging from 46 Åto 71 Å. We observe two types of oscillations in the differential reflectivity with fast ($\sim$ 1- 2 ps) and slow ($\sim$ 24 ps) periods. The period of the fast oscillations changes with the SL period and can be explained as coherent acous… ▽ More We have performed ultrafast pump-probe spectroscopy studies on a series of InAs/GaSb-based short-period superlattice (SL) samples with periods ranging from 46 Åto 71 Å. We observe two types of oscillations in the differential reflectivity with fast ($\sim$ 1- 2 ps) and slow ($\sim$ 24 ps) periods. The period of the fast oscillations changes with the SL period and can be explained as coherent acoustic phonons generated from carriers photoexcited within the SL. This mode provides an accurate method for determining the SL period and assessing interface quality. The period of the slow mode depends on the wavelength of the probe pulse and can be understood as a propagating coherent phonon wavepacket modulating the reflectivity of the probe pulse as it travels from the surface into the sample. △ Less

Submitted 4 June, 2011; originally announced June 2011.

Comments: 6 pages, 4 figures

Journal ref: Superlattices and Microstructures 52, 1071 (2012)

Polarization dependence of coherent phonon generation and detection in highly-aligned single-walled carbon nanotubes

Authors: L. G. Booshehri, C. L. Pint, G. D. Sanders, L. Ren, C. Sun, E. H. Haroz, J. -H. Kim, K. -J. Yee, Y. -S. Lim, R. H. Hauge, C. J. Stanton, J. Kono

Abstract: We have investigated the polarization dependence of the generation and detection of radial breathing mode (RBM) coherent phonons (CP) in highly-aligned single-walled carbon nanotubes. Using polarization-dependent pump-probe differential-transmission spectroscopy, we measured RBM CPs as a function of angle for two different geometries. In Type I geometry, the pump and probe polarizations were fixed… ▽ More We have investigated the polarization dependence of the generation and detection of radial breathing mode (RBM) coherent phonons (CP) in highly-aligned single-walled carbon nanotubes. Using polarization-dependent pump-probe differential-transmission spectroscopy, we measured RBM CPs as a function of angle for two different geometries. In Type I geometry, the pump and probe polarizations were fixed, and the sample orientation was rotated, whereas, in Type II geometry, the probe polarization and sample orientation were fixed, and the pump polarization was rotated. In both geometries, we observed a very nearly complete quenching of the RBM CPs when the pump polarization was perpendicular to the nanotubes. For both Type I and II geometries, we have developed a microscopic theoretical model to simulate CP generation and detection as a function of polarization angle and found that the CP signal decreases as the angle goes from 0 degrees (parallel to the tube) to 90 degrees (perpendicular to the tube). We compare theory with experiment in detail for RBM CPs created by pumping at the E44 optical transition in an ensemble of single-walled carbon nanotubes with a diameter distribution centered around 3 nm, taking into account realistic band structure and imperfect nanotube alignment in the sample. △ Less

Submitted 19 July, 2010; originally announced July 2010.

Journal ref: Physical Review B 83, 195411 (2011)

Resonant Coherent Phonon Spectroscopy of Single-Walled Carbon Nanotubes

Authors: G. D. Sanders, C. J. Stanton, J. -H. Kim, K. -J. Yee, Y. -S. Lim, E. H. Haroz, L. G. Booshehri, J. Kono, R. Saito

Abstract: Using femtosecond pump-probe spectroscopy with pulse shaping techniques, one can generate and detect coherent phonons in chirality-specific semiconducting single-walled carbon nanotubes. The signals are resonantly enhanced when the pump photon energy coincides with an interband exciton resonance, and analysis of such data provides a wealth of information on the chirality-dependence of light abso… ▽ More Using femtosecond pump-probe spectroscopy with pulse shaping techniques, one can generate and detect coherent phonons in chirality-specific semiconducting single-walled carbon nanotubes. The signals are resonantly enhanced when the pump photon energy coincides with an interband exciton resonance, and analysis of such data provides a wealth of information on the chirality-dependence of light absorption, phonon generation, and phonon-induced band structure modulations. To explain our experimental results, we have developed a microscopic theory for the generation and detection of coherent phonons in single-walled carbon nanotubes using a tight-binding model for the electronic states and a valence force field model for the phonons. We find that the coherent phonon amplitudes satisfy a driven oscillator equation with the driving term depending on photoexcited carrier density. We compared our theoretical results with experimental results on mod 2 nanotubes and found that our model provides satisfactory overall trends in the relative strengths of the coherent phonon signal both within and between different mod 2 families. We also find that the coherent phonon intensities are considerably weaker in mod 1 nanotubes in comparison with mod~2 nanotubes, which is also in excellent agreement with experiment. △ Less

Submitted 1 June, 2009; v1 submitted 10 December, 2008; originally announced December 2008.

Comments: 21 pages, 22 figures

Journal ref: Phys. Rev. B, 79, 205434 (2009)

Chirality-Selective Excitation of Coherent Phonons in Carbon Nanotubes

Authors: J. -H. Kim, K. -J. Han, N. -J. Kim, K. -J. Yee, Y. -S. Lim, G. D. Sanders, C. J. Stanton, L. G. Booshehri, E. H. Haroz, J. Kono

Abstract: Using pre-designed trains of femtosecond optical pulses, we have selectively excited coherent phonons of the radial breathing mode of specific-chirality single-walled carbon nanotubes within an ensemble sample. By analyzing the initial phase of the phonon oscillations, we prove that the tube diameter initially increases in response to ultrafast photoexcitation. Furthermore, from excitation profi… ▽ More Using pre-designed trains of femtosecond optical pulses, we have selectively excited coherent phonons of the radial breathing mode of specific-chirality single-walled carbon nanotubes within an ensemble sample. By analyzing the initial phase of the phonon oscillations, we prove that the tube diameter initially increases in response to ultrafast photoexcitation. Furthermore, from excitation profiles, we demonstrate that an excitonic absorption peak of carbon nanotubes periodically oscillates as a function of time when the tube diameter undergoes radial breathing mode oscillations. △ Less

Submitted 19 December, 2008; v1 submitted 15 May, 2008; originally announced May 2008.

Comments: 4 pages, 4 figures

Journal ref: Physical Review Letters 102, 037402 (2009)

Carrier dynamics and coherent acoustic phonons in nitride heterostructures

Authors: G. D. Sanders, C. J. Stanton

Abstract: We model generation and propagation of coherent acoustic phonons in piezoelectric InGaN/GaN multi-quantum wells embedded in a \textit{pin} diode structure and compute the time resolved reflectivity signal in simulated pump-probe experiments. Carriers are created in the InGaN wells by ultrafast pumping below the GaN band gap and the dynamics of the photoexcited carriers is treated in a Boltzmann… ▽ More We model generation and propagation of coherent acoustic phonons in piezoelectric InGaN/GaN multi-quantum wells embedded in a \textit{pin} diode structure and compute the time resolved reflectivity signal in simulated pump-probe experiments. Carriers are created in the InGaN wells by ultrafast pumping below the GaN band gap and the dynamics of the photoexcited carriers is treated in a Boltzmann equation framework. Coherent acoustic phonons are generated in the quantum well via both deformation potential electron-phonon and piezoelectric electron-phonon interaction with photogenerated carriers, with the latter mechanism being the dominant one. Coherent longitudinal acoustic phonons propagate into the structure at the sound speed modifying the optical properties and giving rise to a giant oscillatory differential reflectivity signal. We demonstrate that coherent optical control of the differential reflectivity can be achieved using a delayed control pulse. △ Less

Submitted 28 June, 2006; originally announced June 2006.

Comments: 14 pages, 11 figures

Electronic states and cyclotron resonance in p-type InMnAs and InMnAs/(Al,Ga)Sb at ultrahigh magnetic fields

Authors: Y. Sun, F. V. Kyrychenko, G. D. Sanders, C. J. Stanton, G. A. Khodaparast, J. Kono, Y. H. Matsuda, H. Munekata

Abstract: We present a theoretical and experimental study on electronic and magneto-optical properties of p-type paramagnetic InMnAs dilute magnetic semiconductor alloys and ferromagnetic p-type InMnAs/(Al,Ga)Sb thin films in ultrahigh (> 100 T) external magnetic fields \textbf{B}. We use an 8 band Pidgeon-Brown model generalized to include the wavevector dependence of the electronic states along B as wel… ▽ More We present a theoretical and experimental study on electronic and magneto-optical properties of p-type paramagnetic InMnAs dilute magnetic semiconductor alloys and ferromagnetic p-type InMnAs/(Al,Ga)Sb thin films in ultrahigh (> 100 T) external magnetic fields \textbf{B}. We use an 8 band Pidgeon-Brown model generalized to include the wavevector dependence of the electronic states along B as well as s-d and p-d exchange interactions with localized Mn d-electrons. In paramagnetic p-InMnAs alloys, we compute the spin-dependent electronic structure as a function of Mn doping and examine how the valence band structure depends on parameters such as the sp-d exchange interaction strength and effective masses. The cyclotron resonance (CR) and magneto-optical properties of InMnAs are computed using Fermi's golden rule. In addition to finding strong CR for hole-active polarization in p-type InMnAs, we also find strong CR for electron-active polarization. The electron-active CR in the valence bands results from transitions between light and heavy hole Landau levels and is seen in experiments. In ferromagnetic p-InMnAs/(Al,Ga)Sb, two strong CR peaks are observed which shift with position and increase in strength as the Curie temperature is approached from above. This transition takes place well above the Curie temperature and can be attributed to the increase in magnetic ordering at low temperatures. △ Less

Submitted 12 October, 2005; originally announced October 2005.

Comments: 15 pages, 17 figures

Theory of carrier dynamics and time resolved reflectivity in InMnAs/GaSb heterostructures

Authors: G. D. Sanders, C. J. Stanton, J. Wang, J. Kono, A. Oiwa, H. Munekata

Abstract: We present detailed theoretical calculations of two color, time-resolved pump-probe differential reflectivity measurements. The experiments modeled were performed on InMnAs/GaSb heterostructures and showed pronounced oscillations in the differential reflectivity as well as a time-dependent background signal. Previously, we showed that the oscillations resulted from generation of coherent acousti… ▽ More We present detailed theoretical calculations of two color, time-resolved pump-probe differential reflectivity measurements. The experiments modeled were performed on InMnAs/GaSb heterostructures and showed pronounced oscillations in the differential reflectivity as well as a time-dependent background signal. Previously, we showed that the oscillations resulted from generation of coherent acoustic phonon wavepackets in the epilayer and were not associated with the ferromagnetism. Now we take into account not only the oscillations, but also the background signal which arises from photoexcited carrier effects. The two color pump-probe reflectivity experiments are modeled using a Boltzmann equation formalism. We include photogeneration of hot carriers in the InMnAs quantum well by a pump laser and their subsequent cooling and relaxation by emission of confined LO phonons. Recombination of electron-hole pairs via the Schockley-Read carrier trapping mechanism is included in a simple relaxation time approximation. The time resolved differential reflectivity in the heterostructure is obtained by solving Maxwell's equations and compared with experiment. Phase space filling, carrier capture and trapping, band-gap renormalization and induced absorption are all shown to influence the spectra. △ Less

Submitted 6 September, 2005; originally announced September 2005.

Comments: 14 pages, 10 figures

Propagating Coherent Acoustic Phonon Wavepackets in InMnAs/GaSb

Authors: J. Wang, Y. Hashimoto, J. Kono, A. Oiwa, H. Munekata, G. D. Sanders, C. J. Stanton

Abstract: We observe pronounced oscillations in the differential reflectivity of a ferromagnetic InMnAs/GaSb heterostructure using two-color pump-probe spectroscopy. Although originally thought to be associated with the ferromagnetism, our studies show that the oscillations instead result from changes in the position and frequency-dependent dielectric function due to the generation of coherent acoustic ph… ▽ More We observe pronounced oscillations in the differential reflectivity of a ferromagnetic InMnAs/GaSb heterostructure using two-color pump-probe spectroscopy. Although originally thought to be associated with the ferromagnetism, our studies show that the oscillations instead result from changes in the position and frequency-dependent dielectric function due to the generation of coherent acoustic phonons in the ferromagnetic InMnAs layer and their subsequent propagation into the GaSb. Our theory accurately predicts the experimentally measured oscillation period and decay time as a function of probe wavelength. △ Less

Submitted 10 May, 2005; originally announced May 2005.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 72, 153311 (2005)

Dark-bright magneto-exciton mixing induced by Coulomb interaction in strained quantum wells

Authors: Y. D. Jho, F. V. Kyrychenko, J. Kono, X. Wei, S. A. Crooker, G. D. Sanders, D. H. Reitze, C. J. Stanton, G. S. Solomon

Abstract: Coupled magneto-exciton states between allowed (`bright') and forbidden (`dark') transitions are found in absorption spectra of strained In$_{0.2}$Ga$_{0.8}$As/GaAs quantum wells with increasing magnetic field up to 30 T. We found large (~ 10 meV) energy splittings in the mixed states. The observed anticrossing behavior is independent of polarization, and sensitive only to the parity of the quan… ▽ More Coupled magneto-exciton states between allowed (`bright') and forbidden (`dark') transitions are found in absorption spectra of strained In$_{0.2}$Ga$_{0.8}$As/GaAs quantum wells with increasing magnetic field up to 30 T. We found large (~ 10 meV) energy splittings in the mixed states. The observed anticrossing behavior is independent of polarization, and sensitive only to the parity of the quantum confined states. Detailed experimental and theoretical investigations indicate that the excitonic Coulomb interaction rather than valence band complexity is responsible for the splittings. In addition, we determine the spin composition of the mixed states. △ Less

Submitted 14 October, 2004; originally announced October 2004.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 72, 045340 (2005)

Ultrahigh-Field Hole Cyclotron Resonance Absorption in InMnAs Films

Authors: Y. H. Matsuda, G. A. Khodaparas, M. A. Zudov, J. Kono, Y. Sun, F. V. Kyrychenko, G. D. Sanders, C. J. Stanton, N. Miura, S. Ikeda, Y. Hashimoto, S. Katsumoto, H. Munekata

Abstract: We have carried out an ultrahigh-field cyclotron resonance study of p-type In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T were used to make cyclotron resonance observable in these low-mobility samples. The clear observation of hole cyclotron resonance is direct evidence of the existence… ▽ More We have carried out an ultrahigh-field cyclotron resonance study of p-type In1-xMnxAs films, with Mn composition x ranging from 0% to 2.5%, grown on GaAs by low-temperature molecular-beam epitaxy. Pulsed magnetic fields up to 500 T were used to make cyclotron resonance observable in these low-mobility samples. The clear observation of hole cyclotron resonance is direct evidence of the existence of a large number of itinerant, effective-mass-type holes rather than localized d-like holes. It further suggests that the p-d exchange mechanism is more favorable than the double exchange mechanism in this narrow gap InAs-based dilute magnetic semiconductor. In addition to the fundamental heavy-hole and light-hole cyclotron resonance absorption appearing near the high-magnetic-field quantum limit, we observed many inter-Landau-level absorption bands whose transition probabilities are stronglydependent on the sense of circular polarization of the incident light. △ Less

Submitted 27 April, 2004; originally announced April 2004.

Comments: 8 pages, 10 Postscript figures

Journal ref: Phys. Rev. B 70, 195211 (2004)

Ultrafast spectroscopy of propagating coherent acoustic phonons in GaN/InGaN heterostructures

Authors: Rongliang Liu, Chang Sub Kim, G. D. Sanders, C. J. Stanton, J. S. Yahng, Y. D. Jho, K. J. Yee, E. Oh, D. S. Kim

Abstract: We show that large amplitude, coherent acoustic phonon wavepackets can be generated and detected in In$_x$Ga$_{1-x}$N/GaN epilayers and heterostructures in femtosecond pump-probe differential reflectivity experiments. The amplitude of the coherent phonon increases with increasing Indium fraction $x$ and unlike other coherent phonon oscillations, both \textit{amplitude} and \textit{period} are st… ▽ More We show that large amplitude, coherent acoustic phonon wavepackets can be generated and detected in In$_x$Ga$_{1-x}$N/GaN epilayers and heterostructures in femtosecond pump-probe differential reflectivity experiments. The amplitude of the coherent phonon increases with increasing Indium fraction $x$ and unlike other coherent phonon oscillations, both \textit{amplitude} and \textit{period} are strong functions of the laser probe energy. The amplitude of the oscillation is substantially and almost instantaneously reduced when the wavepacket reaches a GaN-sapphire interface below the surface indicating that the phonon wavepackets are useful for imaging below the surface. A theoretical model is proposed which fits the experiments well and helps to deduce the strength of the phonon wavepackets. Our model shows that localized coherent phonon wavepackets are generated by the femtosecond pump laser in the epilayer near the surface. The wavepackets then propagate through a GaN layer changing the local index of refraction, primarily through the Franz-Keldysh effect, and as a result, modulate the reflectivity of the probe beam. Our model correctly predicts the experimental dependence on probe-wavelength as well as epilayer thickness. △ Less

Submitted 28 October, 2003; originally announced October 2003.

Comments: 11 pages, 14 figures

Determining carrier densities in InMnAs by cyclotron resonance

Authors: G. D. Sanders, Y. Sun, C. J. Stanton, G. A. Khodaparast, J. Kono, D. S. King, Y. H. Matsuda, S. Ikeda, N. Miura, A. Oiwa, H. Munekata

Abstract: Accurate determination of carrier densities in ferromagnetic semiconductors by Hall measurements is hindered by the anomalous Hall effect, and thus alternative methods are being sought. Here, we propose that cyclotron resonance (CR) is an excellent method for carrier density determination for InMnAs-based magnetic structures. We develop a theory for electronic and magneto-optical properties in n… ▽ More Accurate determination of carrier densities in ferromagnetic semiconductors by Hall measurements is hindered by the anomalous Hall effect, and thus alternative methods are being sought. Here, we propose that cyclotron resonance (CR) is an excellent method for carrier density determination for InMnAs-based magnetic structures. We develop a theory for electronic and magneto-optical properties in narrow gap InMnAs films and superlattices in ultrahigh magnetic fields oriented along [001]. In n-type InMnAs films and superlattices, we find that the e-active CR peak field is pinned at low electron densities and then begins to shift rapidly to higher fields above a critical electron concentration allowing the electron density to be accurately calibrated. In p-type InMnAs, we observe two h-active CR peaks due to heavy and light holes. The lineshapes depend on temperature and line broadening. The light hole CR requires higher hole densities and fields. Analyzing CR lineshapes in p-films and superlattices can help determine hole densities. △ Less

Submitted 25 July, 2003; originally announced July 2003.

Comments: 4 pages, 4 figures

Cyclotron Resonance in Ferromagnetic InMnAs/(Al,Ga)Sb Heterostructures

Authors: G. A. Khodaparast, J. Kono, Y. H. Matsuda, S. Ikeda, N. Miura, T. Slupinski, A. Oiwa, H. Munekata, Y. Sun, F. V. Kyrychenko, G. D. Sanders, C. J. Stanton

Abstract: We report the observation of hole cyclotron resonance (CR) in InMnAs/(Al,Ga)Sb heterostructures in a wide temperature range covering both the paramagnetic and ferromagnetic phases. We observed two pronounced resonances that exhibit drastic changes in position, linewidth, and intensity at a temperature higher than the Curie temperature, indicating possible local magnetic ordering or clustering. W… ▽ More We report the observation of hole cyclotron resonance (CR) in InMnAs/(Al,Ga)Sb heterostructures in a wide temperature range covering both the paramagnetic and ferromagnetic phases. We observed two pronounced resonances that exhibit drastic changes in position, linewidth, and intensity at a temperature higher than the Curie temperature, indicating possible local magnetic ordering or clustering. We attribute the two resonances to the fundamental CR transitions expected for delocalized valence-band holes in the quantum limt. Using an 8-band {\bf k$\cdot$p} model, which incorporates ferromagnetism within a mean-field approximation, we show that the temperature-dependent CR peak shift is a direct measure of the carrier-Mn exchange interaction. Significant line narrowing was observed at low temperatures, which we interpret as the suppression of localized spin fluctuations. △ Less

Submitted 3 July, 2003; originally announced July 2003.

Comments: 4 pages, 5 figures

Electronic States and Cyclotron Resonance in n-type InMnAs

Authors: G. D. Sanders, Y. Sun, F. V. Kyrychenko, C. J. Stanton, G. A. Kodaparast, M. A. Zudov, J. Kono, Y. H. Matsuda, N. Miura, H. Munekata

Abstract: We present a theory for electronic and magneto-optical properties of n-type In(1-x)Mn(x)As magnetic alloy semiconductors in a high magnetic field, B. We use an 8-band Pidgeon-Brown model generalized to include the wavevector (Kz) dependence of the electronic states as well as s-d and p-d exchange interactions with localized Mn d-electrons. Calculated conduction-band Landau levels exhibit effecti… ▽ More We present a theory for electronic and magneto-optical properties of n-type In(1-x)Mn(x)As magnetic alloy semiconductors in a high magnetic field, B. We use an 8-band Pidgeon-Brown model generalized to include the wavevector (Kz) dependence of the electronic states as well as s-d and p-d exchange interactions with localized Mn d-electrons. Calculated conduction-band Landau levels exhibit effective masses and g factors that are strongly dependent on temperature, magnetic field, Mn concentration (x), and Kz. Cyclotron resonance (CR) spectra are computed using Fermi's golden rule and compared with ultrahigh-magnetic-field (> 50 T) CR experiments, which show that the electron CR peak position is sensitive to x. Detailed comparison between theory and experiment allowed us to extract s-d and p-d exchange parameters, alpha and beta. we find that not only alpha but also beta affects the electron mass because of the strong interband coupling in this narrow gap semiconductor. In addition, we derive analytical expressions for the effective masses and g facors within the 8-band model. Results indicate that (alpha - beta) is the crucial parameter that determines the exchange interaction correction to the cyclotron masses. These findings sould be useful for designing novel devices based on ferromagnetic semiconductors. △ Less

Submitted 23 July, 2003; v1 submitted 18 April, 2003; originally announced April 2003.

Comments: 19 pages, 13 figures

Journal ref: Physical Review B, 68, 165205 (2003).

Exceptionally Slow Rise in Differential Reflectivity Spectra of Excitons in GaN: Effect of Excitation-induced Dephasing

Authors: Y. D. Jho, D. S. Kim, A. J. Fischer, J. J. Song, J. Kenrow, K. El Sayed, C. J. Stanton

Abstract: Femtosecond pump-probe (PP) differential reflectivity spectroscopy (DRS) and four-wave mixing (FWM) experiments were performed simultaneously to study the initial temporal dynamics of the exciton line-shapes in GaN epilayers. Beats between the A-B excitons were found \textit{only for positive time delay} in both PP and FWM experiments. The rise time at negative time delay for the differential re… ▽ More Femtosecond pump-probe (PP) differential reflectivity spectroscopy (DRS) and four-wave mixing (FWM) experiments were performed simultaneously to study the initial temporal dynamics of the exciton line-shapes in GaN epilayers. Beats between the A-B excitons were found \textit{only for positive time delay} in both PP and FWM experiments. The rise time at negative time delay for the differential reflection spectra was much slower than the FWM signal or PP differential transmission spectroscopy (DTS) at the exciton resonance. A numerical solution of a six band semiconductor Bloch equation model including nonlinearities at the Hartree-Fock level shows that this slow rise in the DRS results from excitation induced dephasing (EID), that is, the strong density dependence of the dephasing time which changes with the laser excitation energy. △ Less

Submitted 13 February, 2003; originally announced February 2003.

Comments: 8 figures

Journal ref: Physical Review B 68, 165325 (2003)

Ultrahigh field electron cyclotron resonance absorption in In$_{1-x}$Mn$_x$As films

Authors: M. A. Zudov, J. Kono, Y. H. Matsuda, T. Ikaida, N. Miura, H. Munekata, G. D. Sanders, Y. Sun, C. J. Stanton

Abstract: We have carried out an ultrahigh field cyclotron resonance study of $n$-type In$_{1-x}$Mn$_x$As films, with Mn composition $x$ ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing $x$. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Br… ▽ More We have carried out an ultrahigh field cyclotron resonance study of $n$-type In$_{1-x}$Mn$_x$As films, with Mn composition $x$ ranging from 0 to 12%, grown on GaAs by low temperature molecular beam epitaxy. We observe that the electron cyclotron resonance peak shifts to lower field with increasing $x$. A detailed comparison of experimental results with calculations based on a modified Pidgeon-Brown model allows us to estimate the {\em s-d} and {\em p-d} exchange coupling constants, $α$ and $β$, for this important III-V dilute magnetic semiconductor system. △ Less

Submitted 2 July, 2002; originally announced July 2002.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B Vol. 66, 161307(R) (2002).

Theory of coherent acoustic phonons in InGaN/GaN multi-quantum wells

Authors: G. D. Sanders, C. J. Stanton, Chang-Sub Kim

Abstract: A microscopic theory for the generation and propagation of coherent LA phonons in pseudomorphically strained wurzite (0001) InGaN/GaN multi-quantum well (MQW) p-i-n diodes is presented. The generation of coherent LA phonons is driven by photoexcitation of electron-hole pairs by an ultrafast Gaussian pump laser and is treated theoretically using the density matrix formalism. We use realistic wurz… ▽ More A microscopic theory for the generation and propagation of coherent LA phonons in pseudomorphically strained wurzite (0001) InGaN/GaN multi-quantum well (MQW) p-i-n diodes is presented. The generation of coherent LA phonons is driven by photoexcitation of electron-hole pairs by an ultrafast Gaussian pump laser and is treated theoretically using the density matrix formalism. We use realistic wurzite bandstructures taking valence-band mixing and strain-induced piezo- electric fields into account. In addition, the many-body Coulomb ineraction is treated in the screened time-dependent Hartree-Fock approximation. We find that under typical experimental conditions, our microscopic theory can be simplified and mapped onto a loaded string problem which can be easily solved. △ Less

Submitted 11 June, 2002; v1 submitted 30 January, 2001; originally announced January 2001.

Comments: 20 pages, 17 figures

Journal ref: Phys. Rev. B 64, 235316 (2001)

Zero Frequency Current Noise for the Double Tunnel Junction Coulomb Blockade

Authors: Selman Hershfield, John H. Davies, Per Hyldgaard, Christopher J. Stanton, John W. Wilkins

Abstract: We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages, capacitances, and resistances it is shown that the noise measures the variance in the number of electrons in the region between the two tunnel junctions. The average c… ▽ More We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages, capacitances, and resistances it is shown that the noise measures the variance in the number of electrons in the region between the two tunnel junctions. The average current, on the other hand, only measures the mean number of electrons. Thus, the noise provides additional information about transport in these devices which is not available from measuring the current alone. △ Less

Submitted 20 July, 1992; originally announced July 1992.

Comments: 33 pages, 10 figures