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Extended Time-Dependent Density Functional Theory for Multi-Body Densities
Authors:
Jiong-Hang Liang,
Tian-Xing Hu,
D. Wu,
Zheng-Mao Sheng,
J. Zhang
Abstract:
Time-dependent density functional theory (TDDFT) is widely used for understanding and predicting properties and behaviors of matter. As one of the fundamental theorems in TDDFT, van Leeuwen's theorem [Phys. Rev. Lett. 82, 3863 (1999)] guarantees how to construct a unique potential with the same one-body density evolution. Here we extend van Leeuwen's theorem by exploring truncation criteria in BBG…
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Time-dependent density functional theory (TDDFT) is widely used for understanding and predicting properties and behaviors of matter. As one of the fundamental theorems in TDDFT, van Leeuwen's theorem [Phys. Rev. Lett. 82, 3863 (1999)] guarantees how to construct a unique potential with the same one-body density evolution. Here we extend van Leeuwen's theorem by exploring truncation criteria in BBGKY-hierarchy. Our generalized theorem demonstrates the existence of a unique non-local potential to accurately reconstruct the multi-body density evolution in binary interacting systems. Under non-stringent conditions, truncation of the BBGKY-hierarchy equations aligns with the behavior of multi-body density evolution, and maintains consistency in the reduced equations. As one of applications within the extended TDDFT supported by our theorem, multiple excitation energy can be typically solved as the eigenvalue of a generalized Casida's equation. The extended TDDFT provides an accurate and first-principle framework capable of describing the kinetic processes of correlated system, including strongly coupled particle transport, multiple excitation and ionization processes.
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Submitted 7 March, 2024;
originally announced March 2024.
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Flexomagnetoelectric effect in Sr2IrO4 thin films
Authors:
Xin Liu,
Ting Hu,
Yujun Zhang,
Xueli Xu,
Biao Wu,
Zongwei Ma,
Peng Lv,
Yuelin Zhang,
Shih-Wen Huang,
Jialu Wu,
Jing Ma,
Jiawang Hong,
Zhigao Sheng,
Chenglong Jia,
Erjun Kan,
Ce-Wen Nan,
Jinxing Zhang
Abstract:
Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybr…
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Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybridization along z axis. Thus, emergent polar phase and out-of-plane magnetic moment have been simultaneously observed in these asymmetric Sr2IrO4 thin films, which both are absent in its ground state. Furthermore, upon the application of magnetic field, such polarization can be controlled by modifying the occupied d orbitals through spin-orbit interaction, giving rise to a flexomagnetoelectric effect. This work provides a general strategy to artificially design multiple symmetries and ferroic orderings in strongly correlated systems.
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Submitted 9 January, 2024;
originally announced January 2024.
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Layer thickness crossover of type-II multiferroic magnetism in NiI2
Authors:
Shuang Wu,
Xinyu Chen,
Canyu Hong,
Xiaofei Hou,
Zhanshan Wang,
Zhiyuan Sheng,
Zeyuan Sun,
Yanfeng Guo,
Shiwei Wu
Abstract:
The discovery of atomically thin van der Waals ferroelectric and magnetic materials encourages the exploration of 2D multiferroics, which holds the promise to understand fascinating magnetoelectric interactions and fabricate advanced spintronic devices. In addition to building a heterostructure consisting of ferroelectric and magnetic ingredients, thinning down layered multiferroics of spin origin…
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The discovery of atomically thin van der Waals ferroelectric and magnetic materials encourages the exploration of 2D multiferroics, which holds the promise to understand fascinating magnetoelectric interactions and fabricate advanced spintronic devices. In addition to building a heterostructure consisting of ferroelectric and magnetic ingredients, thinning down layered multiferroics of spin origin such as NiI2 becomes a natural route to realize 2D multiferroicity. However, the layer-dependent behavior, widely known in the community of 2D materials, necessitates a rigorous scrutiny of the multiferroic order in the few-layer limit. Here, we interrogate the layer thickness crossover of helimagnetism in NiI2 that drives the ferroelectricity and thereby type-II multiferroicity. By using wavelength-dependent polarization-resolved optical second harmonic generation (SHG) to probe the ferroic symmetry, we find that the SHG arises from the inversion-symmetry-breaking magnetic order, not previously assumed ferroelectricity. This magnetism-induced SHG is only observed in bilayer or thicker layers, and vanishes in monolayer, suggesting the critical role of interlayer exchange interaction in breaking the degeneracy of geometrically frustrated spin structures in triangular lattice and stabilizing the type-II multiferroic magnetism in few-layers. While the helimagnetic transition temperature is layer dependent, the few-layer NiI2 exhibits another thickness evolution and reaches the bulk-like behavior in trilayer, indicated by the intermediate centrosymmetric antiferromagnetic state as revealed in Raman spectroscopy. Our work therefore highlights the magnetic contribution to SHG and Raman spectroscopy in reduced dimension and guides the optical study of 2D multiferroics.
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Submitted 20 July, 2023;
originally announced July 2023.
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Classification of second harmonic generation effect in magnetically ordered materials
Authors:
Rui-Chun Xiao,
Ding-Fu Shao,
Wei Gan,
Huan-Wen Wang,
Hui Han,
Z. G. Sheng,
Changjin Zhang,
Hua Jiang,
Hui Li
Abstract:
The relationship between magnetic order and the second harmonic generation (SHG) effect is a fundamental area of study in condensed matter physics with significant practical implications. In order to gain a clearer understanding of this intricate relation, this study presents a comprehensive classification scheme for the SHG effect in magnetically ordered materials. This framework offers a straigh…
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The relationship between magnetic order and the second harmonic generation (SHG) effect is a fundamental area of study in condensed matter physics with significant practical implications. In order to gain a clearer understanding of this intricate relation, this study presents a comprehensive classification scheme for the SHG effect in magnetically ordered materials. This framework offers a straightforward approach to connect magnetic order and SHG effect. The characteristics of the SHG tensors in all magnetic point groups are studied using the isomorphic group method, followed by a comprehensive SHG effect classification scheme that includes seven types based on the symmetries of the magnetic phases and their corresponding parent phases. In addition, a tensor dictionary containing the SHG and linear magneto-optic (LMO) effect is established. Furthermore, an extensive SHG database of magnetically ordered materials is also built up. This classification strategy exposes an anomalous SHG effect with even characteristic under time-reversal symmetry, which is solely contributed by magnetic structure. Moreover, the proposed classification scheme facilitates the determination of magnetic structures through SHG effect.
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Submitted 15 August, 2023; v1 submitted 8 November, 2022;
originally announced November 2022.
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Evidence for distortion-induced local electric polarization in $α$-RuCl$_3$
Authors:
Xinrun Mi,
De Hou,
Xiao Wang,
Sabreen Hammouda,
Caixing Liu,
Zijian Xiong,
Han Li,
Aifeng Wang,
Yisheng Chai,
Yang Qi,
Wei Li,
Xiaoyuan Zhou,
Yixi Su,
D. I. Khomskii,
Mingquan He,
Zhigao Sheng,
Young Sun
Abstract:
The spin-orbit assisted Mott insulator $α$-RuCl$_3$ is a prime candidate for material realization of the Kitaev quantum spin liquid. While little attention has been paid to charge degrees of freedom, charge effects, such as electric polarization, may arise in this system. Here, we report distortion-induced local electric polarization in $α$-RuCl$_3$ as evidenced by single-crystal X-ray diffraction…
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The spin-orbit assisted Mott insulator $α$-RuCl$_3$ is a prime candidate for material realization of the Kitaev quantum spin liquid. While little attention has been paid to charge degrees of freedom, charge effects, such as electric polarization, may arise in this system. Here, we report distortion-induced local electric polarization in $α$-RuCl$_3$ as evidenced by single-crystal X-ray diffraction, second harmonic generation (SHG) and dielectric measurements. The SHG signal appears at room temperature and develops substantially in the Kitaev paramagnetic state when short-range spin correlations come into play. Despite sizable pyroelectric currents in the Kitaev paramagnetic state, the absence of hysteresis in electric field-dependent polariza-tion (P-E) points to the short-range nature of electric polarization. This localized electric polarization is likely the result of distortion-induced charge dimerization, achieved through virtual hopping-induced charge redistribution. In addition, the electric polarization is boosted by short-range spin correlations via spin-phonon coupling in the Kitaev paramagnetic state. Our results emphasize the importance of charge degrees of freedom in $α$-RuCl$_3$, which establish a novel platform to investi-gate charge effects in Kitaev materials.
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Submitted 16 May, 2024; v1 submitted 19 May, 2022;
originally announced May 2022.
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Phonon-related monochromatic THz radiation and its magneto-modulation in 2D ferromagnetic Cr2Ge2Te6
Authors:
Long Cheng,
Huiping Li,
Gaoting Lin,
Jian Yan,
Lei Zhang,
Cheng Yang,
Wei Tong,
Zhuang Ren,
Wang Zhu,
Xin Cong,
Jingjing Gao,
Pingheng Tan,
Xuan Luo,
Yuping sun,
Wenguang Zhu,
Zhigao Sheng
Abstract:
Searching multiple types of terahertz (THz) irradiation source is crucial for the THz technology. Here, by utilizing a two-dimensional (2D) ferromagnetic Cr2Ge2Te6 crystal, we firstly demonstrate a magneto-tunable monochromatic THz irradiation source. With a low-photonic-energy broadband THz pump, a strong THz irradiation with frequency ~0.9 THz and bandwidth ~0.25 THz can be generated and its con…
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Searching multiple types of terahertz (THz) irradiation source is crucial for the THz technology. Here, by utilizing a two-dimensional (2D) ferromagnetic Cr2Ge2Te6 crystal, we firstly demonstrate a magneto-tunable monochromatic THz irradiation source. With a low-photonic-energy broadband THz pump, a strong THz irradiation with frequency ~0.9 THz and bandwidth ~0.25 THz can be generated and its conversion efficiency could even reach 2.1% at 160 K. Moreover, it is intriguing to find that such monochromatic THz irradiation can be efficiently modulated by the magnetic field below 160 K. According to both experimental and theoretical analyses, the emergent THz irradiation is identified as the emission from the phonon-polariton and its temperature and magnetic field dependent behaviors confirmed the large spin-lattice coupling in this 2D ferromagnetic crystal. These observations provide a new route for the creation of tunable monochromatic THz source which may have great practical interests in future applications in photonic and spintronic devices.
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Submitted 12 May, 2021; v1 submitted 7 April, 2021;
originally announced April 2021.
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Observation of an Unusual Colossal Anisotropic Magnetoresistance Effect in an Antiferromagnetic Semiconductor
Authors:
Huali Yang,
Qing Liu,
Zhaoliang Liao,
Liang Si,
Peiheng Jiang,
Xiaolei Liu,
Yanfeng Guo,
Junjie Yin,
Meng Wang,
Zhigao Sheng,
Yuxin Zhao,
Zhiming Wang,
Zhicheng Zhong,
Run-Wei Li
Abstract:
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is…
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Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal anisotropic magnetoresistance effect in an antiferromagnetic binary compound with layered structure rare-earth dichalcogenide EuTe2. The AMR reaches 40000%, which is 4 orders of magnitude larger than that in conventional antiferromagnetic alloys. Combined magnetization, resistivity, and theoretical analysis reveal that the colossal AMR effect is attributed to a novel mechanism of vector-field tunable band structure, rather than the conventional spin-orbit coupling mechanism. Moreover, it is revealed that the strong hybridization between orbitals of Eu-layer with localized spin and Te-layer with itinerant carriers is extremely important for the large AMR effect. Our results suggest a new direction towards exploring AFM materials with prominent magnetotransport properties, which creates an unprecedented opportunity for AFM spintronics applications.
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Submitted 3 March, 2021;
originally announced March 2021.
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Polar Rectification Effect in Electro-Fatigued SrTiO3 Based Junctions
Authors:
Xueli Xu,
Hui Zhang,
Zhicheng Zhong,
Ranran zhang,
Lihua Yin,
Yuping Sun,
Haoliang Huang,
Yalin Lu,
Yi Lu,
Chun Zhou,
Zongwei Ma,
Lei Shen,
Junsong Wang,
Jiandong Guo,
Jirong Sun,
Zhigao Sheng
Abstract:
Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs i…
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Rectifying semiconductor junctions are crucial to electronic devices. They convert alternating current into direct one by allowing unidirectional charge flows. In analogy to the current-flow rectification for itinerary electrons, here, a polar rectification that based on the localized oxygen vacancies (OVs) in a Ti/fatigued-SrTiO3 (fSTO) Schottky junction is first demonstrated. The fSTO with OVs is produced by an electro-degradation process. The different movability of localized OVs and itinerary electrons in the fSTO yield a unidirectional electric polarization at the interface of the junction under the coaction of external and built-in electric fields. Moreover, the fSTO displays a pre-ferroelectric state located between paraelectric and ferroelectric phases. The pre-ferroelectric state has three sub-states and can be easily driven into a ferroelectric state by external electric field. These observations open up opportunities for potential polar devices and may underpin many useful polar-triggered electronic phenomena.
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Submitted 6 January, 2020;
originally announced March 2020.
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Multiple structure and symmetry types in narrow temperature and magnetic field ranges in two-dimensional Cr2Ge2Te6 crystal
Authors:
Tengfei Guo,
Zongwei Ma,
Gaoting Lin,
Xuan Luo,
Yubin Hou,
Yuping Sun,
Zhigao Sheng,
Qingyou Lu
Abstract:
Multiple structure and symmetry types and their transformations are discovered in quasi-two-dimensional (quasi-2D) Cr2Ge2Te6 crystal in surprisingly very narrow temperature range of 2 K and magnetic field range of 0.07 T using a homebuilt magnetic force microscope (MFM). A series of basic domain patterns are extracted from the MFM images. Some of them seem unique to 2-D materials as they are not o…
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Multiple structure and symmetry types and their transformations are discovered in quasi-two-dimensional (quasi-2D) Cr2Ge2Te6 crystal in surprisingly very narrow temperature range of 2 K and magnetic field range of 0.07 T using a homebuilt magnetic force microscope (MFM). A series of basic domain patterns are extracted from the MFM images. Some of them seem unique to 2-D materials as they are not observed in 3-D materials, such as self-fitting disks, and fine ladder structure within Y-connected walls. Based on these findings, a phase map is drawn for the magnetic phase structures. The symmetry of the patterns are discussed. The results are not only important in developing new theories but also highly desirable in applications.
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Submitted 21 March, 2018; v1 submitted 16 March, 2018;
originally announced March 2018.
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Critical behavior of two-dimensional intrinsically ferromagnetic semiconductor CrI3
Authors:
G. T. Lin,
X. Luo,
F. C. Chen,
J. Yan,
J. J. Gao,
Y. Sun,
W. Tong,
P. Tong,
W. J. Lu,
Z. G. Sheng,
W. H. Song,
X. B. Zhu,
Y. P. Sun
Abstract:
CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical b…
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CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical behavior of CrI3 in the vicinity of magnetic transition. We use the modified Arrott plot and Kouvel-Fisher method, and conduct critical isotherm analysis to estimate the critical exponents near the ferromagnetic phase transition. This shows that the magnetism of CrI3 follows the crossover behavior of a 3D-Ising model with mean field type interactions where the critical exponents \b{eta}, γ, and δ are 0.323, 0.835, and 3.585, respectively, at the Curie temperature of 64 K. We propose the crossover behavior can be attributed to the strong uniaxial anisotropy and inevitable interlayer coupling. Our experiment demonstrates the applicability of crossover behavior to a 2D ferromagnetic semiconductor.
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Submitted 30 January, 2018;
originally announced January 2018.
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Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3
Authors:
G. T. Lin,
H. L. Zhuang,
X. Luo,
B. J. Liu,
F. C. Chen,
J. Yan,
Y. Sun,
J. Zhou,
W. J. Lu,
P. Tong,
Z. G. Sheng,
Z. Qu,
W. H. Song,
X. B. Zhu,
Y. P. Sun
Abstract:
CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate t…
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CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents \b{eta}, γ, and δ of 0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.
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Submitted 10 June, 2017;
originally announced June 2017.
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Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd3As2
Authors:
Cheng Zhang,
Awadhesh Narayan,
Shiheng Lu,
Jinglei Zhang,
Huiqin Zhang,
Zhuoliang Ni,
Xiang Yuan,
Yanwen Liu,
Ju-Hyun Park,
Enze Zhang,
Weiyi Wang,
Shanshan Liu,
Long Cheng,
Li Pi,
Zhigao Sheng,
Stefano Sanvito,
Faxian Xiu
Abstract:
Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the domin…
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Owing to the coupling between open Fermi arcs on opposite surfaces, topological Dirac semimetals exhibit a new type of cyclotron orbit in the surface states known as Weyl orbit. Here, by lowering the carrier density in Cd3As2 nanoplates, we observe a crossover from multiple- to single-frequency Shubnikov-de Haas (SdH) oscillations when subjected to out-of-plane magnetic field, indicating the dominant role of surface transport. With the increase of magnetic field, the SdH oscillations further develop into quantum Hall state with non-vanishing longitudinal resistance. By tracking the oscillation frequency and Hall plateau, we observe a Zeeman-related splitting and extract the Landau level index as well as sub-band number. Different from conventional two-dimensional systems, this unique quantum Hall effect may be related to the quantized version of Weyl orbits. Our results call for further investigations into the exotic quantum Hall states in the low-dimensional structure of topological semimetals.
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Submitted 20 September, 2017; v1 submitted 18 December, 2016;
originally announced December 2016.
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Investigation of transient surface electric field induced by femtosecond laser irradiation of aluminum
Authors:
Run-Ze Li,
Pengfei Zhu,
Long Chen,
Tong Xu,
Jie Chen,
Jianming Cao,
Zheng-Ming Sheng,
Jie Zhang
Abstract:
Transient surface electric fields induced by femtosecond laser irradiation of an aluminum film were investigated directly by ultrashort electron pulses. At pump intensities of 2.9~7.1 * 10^10 W/cm2, the transient electric fields last at least one nanosecond with a maximum field strength of 3.2~5.3 * 10^4 V/m at 120 micro m above the aluminum surface. The transient electric fields and the associate…
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Transient surface electric fields induced by femtosecond laser irradiation of an aluminum film were investigated directly by ultrashort electron pulses. At pump intensities of 2.9~7.1 * 10^10 W/cm2, the transient electric fields last at least one nanosecond with a maximum field strength of 3.2~5.3 * 10^4 V/m at 120 micro m above the aluminum surface. The transient electric fields and the associated evolution of photoelectrons were explained by a "three-layer" model. The potential influence of such fields on reflection ultrafast electron diffraction and time-resolved angle-resolved photoemission spectroscopy were evaluated.
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Submitted 25 August, 2014;
originally announced August 2014.
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Simultaneous Investigation of Ultrafast Structural Dynamics and Transient Electric Field by Sub-picosecond Electron Pulses
Authors:
Run-Ze Li,
Pengfei Zhu,
Long Chen,
Jie Chen,
Jianming Cao,
Zheng-Ming Sheng,
Jie Zhang
Abstract:
The ultrafast structure dynamics and surface transient electric field, which are concurrently induced by laser excited electrons of an aluminum nanofilm, have been investigated simultaneously by the same transmission electron diffraction patterns. These two processes are found to be significantly different and distinguishable by tracing the time dependent changes of electron diffraction and deflec…
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The ultrafast structure dynamics and surface transient electric field, which are concurrently induced by laser excited electrons of an aluminum nanofilm, have been investigated simultaneously by the same transmission electron diffraction patterns. These two processes are found to be significantly different and distinguishable by tracing the time dependent changes of electron diffraction and deflection angles, respectively. This study also provides a practical means to evaluate simultaneously the effect of transient electric field during the study of structural dynamics under low pump fluence by transmission ultrafast electron diffraction.
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Submitted 22 April, 2014;
originally announced April 2014.
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Direct Imaging of Dynamic Glassy Behavior in a Strained Manganite Film
Authors:
Worasom Kundhikanjana,
Zhigao Sheng,
Yongliang Yang,
Keji Lai,
Yue Ma,
Yong-Tao Cui Michael A. Kelly,
Masao Nakamura,
Masashi Kawasaki,
Yoshinori Tokura,
Qiaochu Tang,
Kun Zhang,
Xinxin Li,
Zhi-Xun Shen
Abstract:
Complex many-body interaction in perovskite manganites gives rise to a strong competition between ferromagnetic metallic and charge ordered phases with nanoscale electronic inhomogeneity and glassy behaviors. Investigating this glassy state requires high resolution imaging techniques with sufficient sensitivity and stability. Here, we present the results of a near-field microwave microscope imagin…
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Complex many-body interaction in perovskite manganites gives rise to a strong competition between ferromagnetic metallic and charge ordered phases with nanoscale electronic inhomogeneity and glassy behaviors. Investigating this glassy state requires high resolution imaging techniques with sufficient sensitivity and stability. Here, we present the results of a near-field microwave microscope imaging on the strain driven glassy state in a manganite film. The high contrast between the two electrically distinct phases allows direct visualization of the phase separation. The low temperature microscopic configurations differ upon cooling with different thermal histories. At sufficiently high temperatures, we observe switching between the two phases in either direction. The dynamic switching, however, stops below the glass transition temperature. Compared with the magnetization data, the phase separation was microscopically frozen, while spin relaxation was found in a short period of time.
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Submitted 19 January, 2016; v1 submitted 13 June, 2013;
originally announced June 2013.
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On the pinning strategy of complex networks
Authors:
Lei Yang,
Xingang Wang,
Yao Li,
Zhengmao Sheng
Abstract:
In pinning control of complex networks, a tacit believing is that the system dynamics will be better controlled by pinning the large-degree nodes than the small-degree ones. Here, by changing the number of pinned nodes, we find that, when a significant fraction of the network nodes are pinned, pinning the small-degree nodes could generally have a higher performance than pinning the large-degree…
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In pinning control of complex networks, a tacit believing is that the system dynamics will be better controlled by pinning the large-degree nodes than the small-degree ones. Here, by changing the number of pinned nodes, we find that, when a significant fraction of the network nodes are pinned, pinning the small-degree nodes could generally have a higher performance than pinning the large-degree nodes. We demonstrate this interesting phenomenon on a variety of complex networks, and analyze the underlying mechanisms by the model of star networks. By changing the network properties, we also find that, comparing to densely connected homogeneous networks, the advantage of the small-degree pinning strategy is more distinct in sparsely connected heterogenous networks.
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Submitted 8 January, 2010;
originally announced January 2010.
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Structural, magnetic and transport properties in the Pr-doped manganites La0.9-xPrxTe0.1MnO3
Authors:
J. Yang,
W. H. Song,
Y. Q. Ma,
R. L. Zhang,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The effect of Pr-doping on structural, magnetic and transport properties in electron-doped manganites La0.9-xPrxTe0.1MnO3 with fixed carrier concentration are investigated. The room temperature structural transition from rhombohedral (R3C) to orthorhombic (Pbnm) symmetry is found in the samples with by the Rietveld refinement of x-ray powder diffraction patterns. The Curie temperature of samples…
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The effect of Pr-doping on structural, magnetic and transport properties in electron-doped manganites La0.9-xPrxTe0.1MnO3 with fixed carrier concentration are investigated. The room temperature structural transition from rhombohedral (R3C) to orthorhombic (Pbnm) symmetry is found in the samples with by the Rietveld refinement of x-ray powder diffraction patterns. The Curie temperature of samples decreases and the transition becomes broader with increasing Pr-doping level. For the samples with, there exist insulator-metal (I-M) transition. And the low-temperature I-M transition is observed at about 66K for the sample with x = 0.36, which may be related to the opening of a new percolation channel. For the samples with, r(T) curves display the semiconducting behavior (dρ/dT < 0) in both high-temperature PM phase and low-temperature FM phase. The results are discussed in terms of the increased bending of the Mn-O-Mn bond with decreasing the average ionic radius of the A-site element <r_A> and the tolerance factor, resulting in the narrowing of the bandwidth, the decrease of the mobility of electrons and the weakening of DE interaction caused by the substitution of smaller Pr3+ ions for larger La3+ ion.
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Submitted 13 August, 2004;
originally announced August 2004.
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Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3
Authors:
J. Yang,
W. H. Song,
Y. Q. Ma,
R. L. Zhang,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The structural, electrical transport and magnetic properties of perovskite oxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagram of La1-xTexMnO3 compounds as a function of temperature and the doping level x has been obtained. All samples have rhombohedral structure and undergo paramagnetic-ferromagnetic (PM-FM) transition accompanied with metal-insulator transition (MIT)…
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The structural, electrical transport and magnetic properties of perovskite oxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagram of La1-xTexMnO3 compounds as a function of temperature and the doping level x has been obtained. All samples have rhombohedral structure and undergo paramagnetic-ferromagnetic (PM-FM) transition accompanied with metal-insulator transition (MIT). Whereas a charge ordering (CO) transition begins to appear at for the sample with x=0.60. Moreover, the variation of the Curie temperature and the MIT temperature is quite complex and the results are discussed in terms of three factors including the average A-site cation radius <rA>, the size mismatch and the Te content. In addition, there has an evident magnetoresistance (MR) at low temperatures for all samples.
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Submitted 13 August, 2004;
originally announced August 2004.
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The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3
Authors:
J. Yang,
B. C. Zhao,
R. L. Zhang,
Y. Q. Ma,
Z. G. Sheng,
W. H. Song,
Y. P. Sun
Abstract:
The effect of grain size on structural, magnetic and transport properties in electron-doped manganites La0.9Te0.1MnO3 has been investigated. All samples show a rhombohedral structure with the space group at room temperature. It shows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increases with the increase of grain size. All samples undergo paramagnetic (PM)-ferromagnetic (FM) p…
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The effect of grain size on structural, magnetic and transport properties in electron-doped manganites La0.9Te0.1MnO3 has been investigated. All samples show a rhombohedral structure with the space group at room temperature. It shows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increases with the increase of grain size. All samples undergo paramagnetic (PM)-ferromagnetic (FM) phase transition and an interesting phenomenon that both magnetization and the Curie temperature decrease with increasing grain size is observed, which is suggested to mainly originate from the increase of the Mn-O bond length . Additionally, obviously increases with decreasing grain size due to the increase of both the height and width of tunneling barriers with decreasing the grain size. The results indicate that both the intrinsic colossal magnetoresistance (CMR) and the extrinsic the extrinsic interfacial magnetoresistance (IMR) can be effectively tuned in La0.9Te0.1MnO3 by changing grain size.
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Submitted 26 August, 2004; v1 submitted 13 August, 2004;
originally announced August 2004.
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Structural, magnetic and transport properties in the Cu-doped manganites La0.85Te0.15Mn1-xCuxO3 (0 \leq x \leq 0.20)
Authors:
J. Yang,
W. H. Song,
Y. Q. Ma,
R. L. Zhang,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The effect of Cu-doping at Mn-site on structural, magnetic and transport properties in electron-doped manganites La0.85Te0.15Mn1-xCuxO3 has been investigated. Based on the analysis of structural parameter variations, the valence state of the Cu ion in Cu-doped manganites is suggested to be +2. All samples undergo the paramagnetic-ferromagnetic (PM-FM) phase transition. The Curie temperature decr…
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The effect of Cu-doping at Mn-site on structural, magnetic and transport properties in electron-doped manganites La0.85Te0.15Mn1-xCuxO3 has been investigated. Based on the analysis of structural parameter variations, the valence state of the Cu ion in Cu-doped manganites is suggested to be +2. All samples undergo the paramagnetic-ferromagnetic (PM-FM) phase transition. The Curie temperature decreases and the transition becomes broader with increasing Cu-doping level, in contrast, the magnetization magnitude of Cu-doping samples at low temperatures increase as x \leq 0.15. The insulator-metal (I-M) transition moves to lower temperatures with increasing Cu-doping content and disappears as x > 0.1. In addition, the higher temperature resistivity r peak in double-peak-like r(T) curves observed in no Cu-doping sample is completely suppressed as Cu-doping level x = 0.1 and r(T) curve only shows single I-M transition at the low temperature well below . The results are discussed according to the change of magnetic exchange interaction caused by Cu-doping.
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Submitted 20 September, 2004; v1 submitted 12 August, 2004;
originally announced August 2004.
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The effect of oxygen stoichiometry on electrical transport and magnetic properties of La0.9Te0.1MnOy
Authors:
J. Yang,
W. H. Song,
R. L. Zhang,
Y. Q. Ma,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The effect of the variation of oxygen content on structural, magnetic and transport properties in the electron-doped manganites La0.9Te0.1MnOy has been investigated. All samples show a rhombohedral structure with the space group . The Curie temperature decreases and the paramagnetic-ferromagnetic (PM-FM) transition becomes broader with the reduction of oxygen content. The resistivity of the anne…
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The effect of the variation of oxygen content on structural, magnetic and transport properties in the electron-doped manganites La0.9Te0.1MnOy has been investigated. All samples show a rhombohedral structure with the space group . The Curie temperature decreases and the paramagnetic-ferromagnetic (PM-FM) transition becomes broader with the reduction of oxygen content. The resistivity of the annealed samples increases slightly with a small reduction of oxygen content. Further reduction in the oxygen content, the resistivity maximum increases by six orders of magnitude compared with that of the as-prepared sample, and the r(T) curves of samples with y = 2.86 and y = 2.83 display the semiconducting behavior () in both high-temperature PM phase and low-temperature FM phase, which is considered to be related to the appearance of superexchange ferromagnetism (SFM) and the localization of carriers. The results are discussed in terms of the combined effects of the increase in the Mn2+/(Mn2++Mn3+) ratio, the partial destruction of double exchange (DE) interaction, and the localization of carriers due to the introduction of oxygen vacancies in the Mn-O-Mn network.
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Submitted 12 August, 2004;
originally announced August 2004.
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Dark Soliton Excitations in Single Wall Carbon Nanotubes
Authors:
Zheng-Mao Sheng,
Guoxiang Huang
Abstract:
Dark soliton excitations are shown to exist in single wall carbon nanotubes (SWCNTs). At first, the nonlinear effective interatomic potential and the difference equation for longitudinal lattice displacement are obtained for the SWCNTs by expanding Brenner's many-body potential in a Taylor series up to fourth-order terms. Then using a multi-scale method, for short wavelength lattice excitations…
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Dark soliton excitations are shown to exist in single wall carbon nanotubes (SWCNTs). At first, the nonlinear effective interatomic potential and the difference equation for longitudinal lattice displacement are obtained for the SWCNTs by expanding Brenner's many-body potential in a Taylor series up to fourth-order terms. Then using a multi-scale method, for short wavelength lattice excitations the equation of motion of lattice is reduced to the cubic nonlinear Schrodinger equation. Finally, the dark soliton solutions and relevant excitations in the SWCNTs with subsonic velocity are discussed.
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Submitted 4 October, 2001;
originally announced October 2001.
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Non-damped Acoustic Plasmon and Superconductivity in Single Wall Carbon Nanotubes
Authors:
Zheng-Mao Sheng,
Guoxiang Huang
Abstract:
We show that non-damped acoustic plasmons exist in single wall carbon nanotubes (SWCNT) and propose that the non-damped acoustic plasmons may mediate electron-electron attraction and result in superconductivity in the SWCNT. The superconducting transition temperature Tc for the SWCNT (3,3) obtained by this mechanism agrees with the recent experimental result (Z. K. Tang et al, Science 292, 2462(…
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We show that non-damped acoustic plasmons exist in single wall carbon nanotubes (SWCNT) and propose that the non-damped acoustic plasmons may mediate electron-electron attraction and result in superconductivity in the SWCNT. The superconducting transition temperature Tc for the SWCNT (3,3) obtained by this mechanism agrees with the recent experimental result (Z. K. Tang et al, Science 292, 2462(2001)). We also show that it is possible to get higher Tc up to 99 K by doping the SWCNT (5,5).
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Submitted 9 August, 2001; v1 submitted 7 August, 2001;
originally announced August 2001.
