FEL stochastic spectroscopy revealing silicon bond softening dynamics
Authors:
Dario De Angelis,
Emiliano Principi,
Filippo Bencivenga,
Daniele Fausti,
Laura Foglia,
Yishay Klein,
Michele Manfredda,
Riccardo Mincigrucci,
Angela Montanaro,
Emanuele Pedersoli,
Jacopo Stefano Pelli Cresi,
Giovanni Perosa,
Kevin C. Prince,
Elia Razzoli,
Sharon Shwartz,
Alberto Simoncig,
Simone Spampinati,
Cristian Svetina,
Jakub Szlachetko,
Alok Tripathi,
Ivan A. Vartanyants,
Marco Zangrando,
Flavio Capotondi
Abstract:
Time-resolved X-ray Emission/Absorption Spectroscopy (Tr-XES/XAS) is an informative experimental tool sensitive to electronic dynamics in materials, widely exploited in diverse research fields. Typically, Tr-XES/XAS requires X-ray pulses with both a narrow bandwidth and sub-picosecond pulse duration, a combination that in principle finds its optimum with Fourier transform-limited pulses. In this w…
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Time-resolved X-ray Emission/Absorption Spectroscopy (Tr-XES/XAS) is an informative experimental tool sensitive to electronic dynamics in materials, widely exploited in diverse research fields. Typically, Tr-XES/XAS requires X-ray pulses with both a narrow bandwidth and sub-picosecond pulse duration, a combination that in principle finds its optimum with Fourier transform-limited pulses. In this work, we explore an alternative xperimental approach, capable of simultaneously retrieving information about unoccupied (XAS) and occupied (XES) states from the stochastic fluctuations of broadband extreme ultraviolet pulses of a free-electron laser. We used this method, in combination with singular value decomposition and Tikhonov regularization procedures, to determine the XAS/XES response from a crystalline silicon sample at the L2,3-edge, with an energy resolution of a few tens of meV. Finally, we combined this spectroscopic method with a pump-probe approach to measure structural and electronic dynamics of a silicon membrane. Tr-XAS/XES data obtained after photoexcitation with an optical laser pulse at 390 nm allowed us to observe perturbations of the band structure, which are compatible with the formation of the predicted precursor state of a non-thermal solid-liquid phase transition associated with a bond softening phenomenon.
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Submitted 9 May, 2023;
originally announced May 2023.
Terahertz tuning of Dirac plasmons in Bi$_2$Se$_3$ Topological Insulator
Authors:
Paola Di Pietro,
Nidhi Adhlakha,
Federica Piccirilli,
Alessandra Di Gaspare,
Jisco Moon,
Seongshik Oh,
Simone Di Mitri,
Simone Spampinati,
Andrea Perucchi,
Stefano Lupi
Abstract:
Light can be strongly confined in sub-wavelength spatial regions through the interaction with plasmons, the collective electronic modes appearing in metals and semiconductors. This confinement, which is particularly important in the terahertz spectral region, amplifies light-matter interaction and provides a powerful mechanism for efficiently generating non-linear optical phenomena. These effects…
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Light can be strongly confined in sub-wavelength spatial regions through the interaction with plasmons, the collective electronic modes appearing in metals and semiconductors. This confinement, which is particularly important in the terahertz spectral region, amplifies light-matter interaction and provides a powerful mechanism for efficiently generating non-linear optical phenomena. These effects are particularly relevant in Dirac materials like graphene and Topological Insulators, where massless fermions show a naturally non-linear optical behavior in the terahertz range. The strong interaction scenario has been considered so far from the point of view of light. In this paper, we investigate instead the effect of strong interaction on the plasmon itself. In particular, we will show that Dirac plasmons in Bi$_2$Se$_3$ Topological Insulator are strongly renormalized when excited by high-intensity terahertz radiation by displaying a huge red-shift down to 60% of its characteristic frequency. This opens the road towards tunable terahertz non-linear optical devices based on Topological Insulators.
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Submitted 24 October, 2019;
originally announced October 2019.
