Showing 1–50 of 71 results for author: Tian, H

Prediction of topotactic transition from black to blue phosphorus induced by surface Br adsorption

Authors: Hao Tian, Wenjun Xie, Maohai Xie, Chuanhui Zhu, Hu Xu, Shuk-Yin Tong

Abstract: Based on first-principles calculations, we propose a potential access to the yet unrealized freestanding blue phosphorus (blueP) through transformation of black phosphorus (blackP) induced by surface bromine (Br) adsorption. Formation of the Br-P bonds disrupts the original sp3 configurations in blackP, generates unpaired pz electrons and induces a structural transformation that results in blueP f… ▽ More Based on first-principles calculations, we propose a potential access to the yet unrealized freestanding blue phosphorus (blueP) through transformation of black phosphorus (blackP) induced by surface bromine (Br) adsorption. Formation of the Br-P bonds disrupts the original sp3 configurations in blackP, generates unpaired pz electrons and induces a structural transformation that results in blueP formation by re-pairing the pz orbitals. Ab initio molecular dynamics simulations confirm that randomly adsorbed Br adatoms on bilayer blackP spontaneously diffuse into specific patterns to render the emergence of the blueP phase. The expected obtainment Br-passivated blueP nanoribbons exhibit tunable band gaps in a wide range and high carrier mobilities of the order of 1000 cm2V-1s-1. This study provides an opportunity to fabricate blueP through the conversion from blackP by tuning its surface chemistry. △ Less

Submitted 8 April, 2024; originally announced April 2024.

Dominant 1/3-filling Correlated Insulator States and Orbital Geometric Frustration in Twisted Bilayer Graphene

Authors: Haidong Tian, Emilio Codecido, Dan Mao, Kevin Zhang, Shi Che, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Eun-Ah Kim, Marc Bockrath, Chun Ning Lau

Abstract: Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins;… ▽ More Geometric frustration is a phenomenon in a lattice system where not all interactions can be satisfied, the simplest example being antiferromagnetically coupled spins on a triangular lattice. Frustrated systems are characterized by their many nearly degenerate ground states, leading to non-trivial phases such as spin ice and spin liquids. To date most studies are on geometric frustration of spins; much less explored is orbital geometric frustration. For electrons in twisted bilayer graphene (tBLG) at denominator 3 fractional filling, Coulomb interactions and the Wannier orbital shapes are predicted to strongly constrain spatial charge ordering, leading to geometrically frustrated ground states that produce a new class of correlated insulators (CIs). Here we report the observation of dominant denominator 3 fractional filling insulating states in large angle tBLG; these states persist in magnetic fields and display magnetic ordering signatures and tripled unit cell reconstruction. These results are in agreement with a strong-coupling theory of symmetry-breaking of geometrically frustrated fractional states. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Gate-controlled neuromorphic functional transition in an electrochemical graphene transistor

Authors: Chenglin Yu, Shaorui Li, Zhoujie Pan, Yanming Liu, Yongchao Wang, Siyi Zhou, Zhiting Gao, He Tian, Kaili Jiang, Yayu Wang, Jinsong Zhang

Abstract: Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in artificial neural network such as synapses and neurons are predominantly implemented by dedicated devices with specific functionalities. In this work, we… ▽ More Neuromorphic devices have gained significant attention as potential building blocks for the next generation of computing technologies owing to their ability to emulate the functionalities of biological nervous systems. The essential components in artificial neural network such as synapses and neurons are predominantly implemented by dedicated devices with specific functionalities. In this work, we present a gate-controlled transition of neuromorphic functions between artificial neurons and synapses in monolayer graphene transistors that can be employed as memtransistors or synaptic transistors as required. By harnessing the reliability of reversible electrochemical reactions between C atoms and hydrogen ions, the electric conductivity of graphene transistors can be effectively manipulated, resulting in high on/off resistance ratio, well-defined set/reset voltage, and prolonged retention time. Overall, the on-demand switching of neuromorphic functions in a single graphene transistor provides a promising opportunity to develop adaptive neural networks for the upcoming era of artificial intelligence and machine learning. △ Less

Submitted 31 December, 2023; v1 submitted 8 December, 2023; originally announced December 2023.

Comments: 22 pages, 4 figures

Journal ref: Nano Lett. 2024, 24, 5, 1620-1628

Quantum Octets in Air Stable High Mobility Two-Dimensional PdSe2

Authors: Yuxin Zhang, Haidong Tian, Huaixuan Li, Chiho Yoon, Ryan A. Nelson, Ziling Li, Kenji Watanabe, Takashi Taniguchi, Dmitry Smirnov, Roland Kawakami, Joshua E. Goldberger, Fan Zhang, Chun Ning Lau

Abstract: Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compa… ▽ More Two-dimensional (2D) materials have drawn immense interest in scientific and technological communities, owing to their extraordinary properties that are profoundly altered from their bulk counterparts and their enriched tunability by gating, proximity, strain, and external fields. For digital applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large-scale synthesis. Here we demonstrate air-stable field-effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with record high saturation current >350μA/μm, and field effect mobilities 700 and 10,000 cm2/Vs at 300K and 2K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Comments: 4 figures, In review

Microstructure and structural modulation of lutetium dihydride LuH2 as seen via transmission electron microscopy

Authors: Xiao-Ping Ma, Ning-Ning Wang, Wen-Tao Wang, Jing-Zhe Nie, Wen-Li Gao, Shuai-Shuai Sun, Jun Li, Huan-Fang Tian, Tian-Long Xia, Jin-Guang Cheng, Jian-Qi Li, Huai-Xin Yang

Abstract: Structural investigations conducted using transmission electron microscopy (TEM) on LuH2 synthesized under atmospheric pressure (AP-LuH2) and nitrogen-doped LuH2 synthesized under high pressure (HP-LuH2) have revealed numerous microstructural phenomena. Both materials show a clear superstructure modulation with wave vector, q^* = 1/4 (2-20), and this modulation can be well interpreted by the displ… ▽ More Structural investigations conducted using transmission electron microscopy (TEM) on LuH2 synthesized under atmospheric pressure (AP-LuH2) and nitrogen-doped LuH2 synthesized under high pressure (HP-LuH2) have revealed numerous microstructural phenomena. Both materials show a clear superstructure modulation with wave vector, q^* = 1/4 (2-20), and this modulation can be well interpreted by the displacements of Lu atoms. Further investigations on the nitrogen-doped HP-LuH2 materials reveal the appearance of high-density antiphase boundaries, in particular, domain walls of a few atomic layer thickness without structural modulation can be observed, suggesting possible interface properties could be detected in this system. In-situ TEM observations of AP-LuH2 suggest that no evident structural phase transition occurs between 94 K and 673 K. △ Less

Submitted 26 September, 2023; originally announced September 2023.

Comments: 8 pages, 7 figures

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Authors: Jian Zhao, Peixun Ji, Yaqi Li, Rui Li, Kaiming Zhang, Hao Tian, Kaichen Yu, Boyue Bian, Luzhen Hao, Xue Xiao, Will Griffin, Noel Dudeck, Ramiro Moro, Lei Ma, Walt A. de Heer

Abstract: Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene la… ▽ More Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics. △ Less

Submitted 23 August, 2023; originally announced August 2023.

Comments: Text and figures + supplemental information

Dynamic motion of polar skyrmions in oxide heterostructures

Authors: Lizhe Hu, Yongjun Wu, Yuhui Huang, He Tian, Zijian Hong

Abstract: Polar skyrmions have been widely investigated in oxide heterostructure recently, due to their exotic properties and intriguing physical insights. Meanwhile, so far, the external field-driven motion of the polar skyrmion, akin to the magnetic counterpart, has yet to be discovered. Here, using phase-field simulations, we demonstrate the dynamic motion of the polar skyrmions with integrated external… ▽ More Polar skyrmions have been widely investigated in oxide heterostructure recently, due to their exotic properties and intriguing physical insights. Meanwhile, so far, the external field-driven motion of the polar skyrmion, akin to the magnetic counterpart, has yet to be discovered. Here, using phase-field simulations, we demonstrate the dynamic motion of the polar skyrmions with integrated external thermal, electrical, and mechanical stimuli. The external heating reduces the spontaneous polarization hence the skyrmion motion barrier, while the skyrmions shrink under the electric field, which could weaken the lattice pinning and interactions between the skyrmions. The mechanical force transforms the skyrmions into c-domain in the vicinity of the indenter center under the electric field, providing the space and driving force needed for the skyrmions to move. This study confirmed that the skyrmions are quasi-particles that can move collectively, while also providing concrete guidance for the further design of polar skyrmion-based electronic devices. △ Less

Submitted 16 August, 2023; originally announced August 2023.

Comments: 17 pages, 4 figures

Robust magnetism against pressure in non-superconducting samples prepared from lutetium foil and H2/N2 gas mixture

Authors: Jing Guo, Shu Cai, Dong Wang, Haiyun Shu, Liuxiang Yang, Pengyu Wang, Wentao Wang, Huanfang Tian, Huaixin Yang, Yazhou Zhou, Jinyu Zhao, Jinyu Han, Jianqi Li Qi Wu, Yang Ding, Wenge Yang, Tao Xiang, Ho-kwang Mao, Liling Sun

Abstract: Recently, the claim of "near-ambient superconductivity" in a N-doped lutetium hydride attracted enormous following-up investigations in the community of condensed matter physics and material sciences. But quite soon, the experimental results from different groups indicate consistently that no evidence of near-ambient superconductivity is found in the samples synthesized by the same method as the r… ▽ More Recently, the claim of "near-ambient superconductivity" in a N-doped lutetium hydride attracted enormous following-up investigations in the community of condensed matter physics and material sciences. But quite soon, the experimental results from different groups indicate consistently that no evidence of near-ambient superconductivity is found in the samples synthesized by the same method as the reported one, or by the other alternative methods. From our extended high-pressure heat capacity and magnetic susceptibility measurements on the samples prepared with the lutetium foil and H2/N2 gas mixture, we report the finding of a magnetic transition at the temperature about 56 K. Our results show that this magnetic phase is robust against pressure up to 4.3 GPa, which covers the critical pressure of boosting the claimed near room temperature superconductivity. △ Less

Submitted 11 June, 2023; v1 submitted 7 June, 2023; originally announced June 2023.

Comments: 14 pages, 4 figures

Journal ref: CPL 40 (2023)097401

Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

Authors: Zhao-Yi Yan, Zhan Hou, Kan-Hao Xue, Tian Lu, Ruiting Zhao, Junying Xue, Fan Wu, Minghao Shao, Jianlan Yan, Anzhi Yan, Zhenze Wang, Penghui Shen, Mingyue Zhao, Xiangshui Miao, Zhaoyang Lin, Houfang Liu, He Tian, Yi Yang, Tian-Ling Ren

Abstract: Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts… ▽ More Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can match the Pao-Sah model for standard silicon-based transistors in terms of physical accuracy and computational efficiency to support large-scale integrated circuit design. One remaining critical obstacle is the contacts of 2DM-FETs. In order to self-consistently include the contact effect in the current model, it is necessary to perform self-consistent calculations, which is a fatal flaw for applications that prioritize efficiency. Here, we report that the Landauer-QFLPS model effectively overcomes the above contradiction, where QFLPS means quasi-Fermi-level phase space theory. By connecting the physical pictures of the contact and the intrinsic channel part, we have successfully derived a drain-source current formula including the contact effect. To verify the model, we prepared transistors based on two typical 2DMs, black phosphorus (BP) and molybdenum disulfide (MoS2), the former having ambipolar transport and the latter showing electron-dominant unipolar transport. The proposed new formula could describe both 2DM-FETs with Schottky or Ohmic contacts. Moreover, compared with traditional methods, the proposed model has the advantages of accuracy and efficiency, especially in describing non-monotonic drain conductance characteristics, because the contact effect is self-consistently and compactly packaged as an exponential term. More importantly, we also examined the model at the circuit level. Here, we fabricated a three-bit threshold inverter quantizer circuit based on ambipolar-BP process and experimentally demonstrated that the model can accurately predict the circuit performance. This industry-benign 2DM-FET model is supposed to be very useful for the development of 2DM-FET-based integrated circuits. △ Less

Submitted 20 March, 2023; originally announced March 2023.

An efficient model algorithm for two-dimensional field-effect transistors

Authors: Zhao-Yi Yan, Zhan Hou, Fan Wu, Ruiting Zhao, Jianlan Yan, Anzhi Yan, Zhenze Wang, Kan-Hao Xue, Houfang Liu, He Tian, Yi Yang, Tian-Ling Ren

Abstract: Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the stan… ▽ More Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forward a quasi-Fermi-level phase space (QFLPS) approach to model the ambipolar effect in our previous work. This work aims to further improve the QFLPS model's numerical aspect so that the model can be implanted into the standard circuit simulator. We first rigorously derive the integral-free formula for the drain-source current to achieve this goal. It is more friendly to computation than the integral form. Besides, it explicitly gives the correlation terms between the electron and hole components. Secondly, to work out the boundary values required by the new expressions, we develop a fast evaluation algorithm for the surface electrostatic potential based on the zero-temperature limit property of the 2DM-FET system. By calibrating the model with the realistic device data of black phosphorus (BP) and monolayer molybdenum disulfide (ML-MoS2) FETs, the completed algorithm is tested against practical cases. The results show a typical superiority to the benchmark algorithm by two orders of magnitude in time consumption can be achieved while keeping a high accuracy with 7 to 9 significant digits. △ Less

Submitted 13 March, 2023; originally announced March 2023.

Comments: 17 pages, 9 figures

Multiphase polarization in ion-intercalation nanofilms: general theory including various surface effects and memory applications

Authors: Huanhuan Tian, Ju Li, Martin Bazant

Abstract: Ion concentration polarization (CP, current-induced concentration gradient adjacent to a charge-selective interface) has been well studied for single-phase mixed conductors (e.g., liquid electrolyte), but multiphase CP has been rarely addressed in literature. In our recent publication, we proposed that CP above certain threshold currents can flip the phase distribution in multiphase ion-intercalat… ▽ More Ion concentration polarization (CP, current-induced concentration gradient adjacent to a charge-selective interface) has been well studied for single-phase mixed conductors (e.g., liquid electrolyte), but multiphase CP has been rarely addressed in literature. In our recent publication, we proposed that CP above certain threshold currents can flip the phase distribution in multiphase ion-intercalation nanofilms sandwiched by ion-blocking electrodes. We call this phenomenon as multiphase polarization (MP). We then proposed that MP can further lead to nonvolatile interfacial resistive switching (RS) for asymmetric electrodes with ion-modulated electron transfer, which theory can reproduce the experimental results of LTO memristors. In this work, we derive a comprehensive 2D phase-field model for coupled ion-electron transport in ion-intercalation materials, with surface effects including electron transfer kinetics, non-neutral wetting, energy relaxation, and surface charge. Then we use the model to study MP. We present time evolution of phase boundaries, and analyze the switching time, current, energy, and cyclic voltammetry, for various boundary conditions. We find that the switching performance can be improved significantly by manipulating surface conditions and mean concentration. Finally, we discuss the prospects of MP-based memories and possible extensions of the current model. △ Less

Submitted 3 December, 2022; originally announced December 2022.

Mechanical configurable nanopatterning of polar topological states and formation of post-skyrmion

Authors: Lizhe Hu, Linming Zhou, Yuhui Huang, Sujit Das, He Tian, Yongjun Wu, Zijian Hong

Abstract: The controllable phase transition and nanopatterning of topological states in a ferroelectric system under external stimuli are critical for realizing the potential applications in nanoelectronic devices such as logic, memory, race-track, etc. Herein, using the phase-field simulations, we demonstrate the mechanical manipulation of polar skyrmions in ferroelectric superlattices by applying external… ▽ More The controllable phase transition and nanopatterning of topological states in a ferroelectric system under external stimuli are critical for realizing the potential applications in nanoelectronic devices such as logic, memory, race-track, etc. Herein, using the phase-field simulations, we demonstrate the mechanical manipulation of polar skyrmions in ferroelectric superlattices by applying external local compressive stress through an atomic force microscopy (AFM) tip. Different switching pathways are observed: under small to moderate force (<1 uN), the skyrmions coalesce to form a long stripe; while increasing the applied load (e.g., above 2 uN) leads to the suppression of spontaneous polarization, forming a new metastable topological structure, namely the post-skyrmion. It is constructed by attaching multiple merons onto a center Bloch skyrmion, showing a topological charge of 1.5 (under 2 uN) or 2 (under 3 uN). We have further designed a mechanical nanopatterning process, where the stripes can form a designed pattern by moving the AFM tip (write), which can also be switched back to a full skyrmion state under an applied electric field (erase). We believe this study will spur further interest in mechanical manipulation and nanopatterning of polar topological phases through mechanical forces. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Comments: 24 pages, 4 figures

Compositionally Complex Perovskite Oxides for Solar Thermochemical Water Splitting

Authors: Dawei Zhang, Hector A. De Santiago, Boyuan Xu, Cijie Liu, Jamie Trindell, Wei Li, Jiyun Park, Mark A. Rodriguez, Eric N. Coker, Josh Sugar, Anthony McDaniel, Stephan Lany, Liang Ma, Yi Wang, Gregory Collins, Hanchen Tian, Wenyuan Li, Yue Qi, Xingbo Liu, Jian Luo

Abstract: Solar thermochemical hydrogen generation (STCH) is a promising approach for eco-friendly H2 production, but conventional STCH redox compounds often suffer from thermodynamic and kinetic limitations with limited tunability. Expanding from the nascent high-entropy ceramics field, this study explores a new class of compositionally complex perovskite oxides (La0.8Sr0.2)(Mn(1-x)/3Fe(1-x)/3CoxAl(1-x)/3)… ▽ More Solar thermochemical hydrogen generation (STCH) is a promising approach for eco-friendly H2 production, but conventional STCH redox compounds often suffer from thermodynamic and kinetic limitations with limited tunability. Expanding from the nascent high-entropy ceramics field, this study explores a new class of compositionally complex perovskite oxides (La0.8Sr0.2)(Mn(1-x)/3Fe(1-x)/3CoxAl(1-x)/3)O3 for STCH. In situ X-ray diffraction demonstrates the phase stability during redox cycling and in situ X-ray photoelectron spectroscopy shows preferential redox of Co. The extent of reduction increases, but the intrinsic kinetics decreases, with increased Co content. Consequently, (La0.8Sr0.2)(Mn0.2Fe0.2Co0.4Al0.2)O3-δ achieves an optimal balance between the thermodynamics and kinetics properties. The combination of a moderate enthalpy of reduction, high entropy of reduction, and preferable surface oxygen exchange kinetics enables a maximum H2 yield of 395 +- 11 μmol g-1 in a short 1-hour redox duration. Entropy stabilization expectedly contributes to the structure stability during redox without phase transformation, which enables an exceptional STCH stability for >50 cycles under harsh interrupted conditions. The underlying redox mechanism is further elucidated by the density functional theory based parallel Monte Carlo computation, which represents a new computation paradigm first established here. This study suggests a new class of non-equimolar compositionally complex ceramics for STCH and chemical looping. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Ferroelectric Solitons Crafted in Epitaxial Bismuth Ferrite Superlattices

Authors: V. Govinden, P. R. Tong, X. Guo, Q. Zhang, S. Mantri, S. Prokhorenko, Y. Nahas, Y. Wu, L. Bellaiche, H. Tian, Z. Hong, D. Sando, V. Nagarajan

Abstract: In ferroelectrics, complex interactions among various degrees of freedom enable the condensation of topologically protected polarization textures. Known as ferroelectric solitons, these particle-like structures represent a new class of materials with promise for beyond CMOS technologies due to their ultrafine size and sensitivity to external stimuli. Such polarization textures have scarcely been r… ▽ More In ferroelectrics, complex interactions among various degrees of freedom enable the condensation of topologically protected polarization textures. Known as ferroelectric solitons, these particle-like structures represent a new class of materials with promise for beyond CMOS technologies due to their ultrafine size and sensitivity to external stimuli. Such polarization textures have scarcely been reported in multiferroics. Here, we report a range of soliton topologies in bismuth ferrite strontium titanate superlattices. High-resolution piezoresponse force microscopy and Cs-corrected high-angle annular dark-field scanning transmission electron microscopy reveal a zoo of topologies, and polarization displacement mapping of planar specimens reveals center-convergent and divergent topological defects as small as 3 nm. Phase field simulations verify that some of these topologies can be classed as bimerons, with a topological charge of plus and minus one, and first-principles-based effective Hamiltonian computations show that the co-existence of such structures can lead to non-integer topological charges, a first observation in a BiFeO3-based system. Our results open new opportunities in multiferroic topotronics. △ Less

Submitted 19 September, 2022; originally announced September 2022.

Superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures

Authors: Yuan Liu, Zhongran Liu, Meng Zhang, Yanqiu Sun, He Tian, Yanwu Xie

Abstract: Complex oxide heterointerfaces can host a rich of emergent phenomena, and epitaxial growth is usually at the heart of forming these interfaces. Recently, a strong crystalline-orientation-dependent two-dimensional superconductivity was discovered at interfaces between KTaO3 single-crystal substrates and films of other oxides. Unexpectedly, rare of these oxide films was epitaxially grown. Here, we r… ▽ More Complex oxide heterointerfaces can host a rich of emergent phenomena, and epitaxial growth is usually at the heart of forming these interfaces. Recently, a strong crystalline-orientation-dependent two-dimensional superconductivity was discovered at interfaces between KTaO3 single-crystal substrates and films of other oxides. Unexpectedly, rare of these oxide films was epitaxially grown. Here, we report the existence of superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures, with a superconducting transition temperature of ~0.5 K. Meanwhile, no superconductivity was detected in the (001)- and (110)-orientated LaVO3/KTaO3 heterostructures down to 50 mK. Moreover, we find that for the LaVO3/KTaO3(111) interfaces to be conducting, an oxygen-deficient growth environment and a minimum LaVO3 thickness of ~0.8 nm (~ 2 unit cells) are needed. △ Less

Submitted 3 November, 2022; v1 submitted 11 August, 2022; originally announced August 2022.

Comments: 5 figures, plus 6 supplementary figures

Machine learning of percolation models using graph convolutional neural networks

Authors: Hua Tian, Lirong Zhang, Youjin Deng, Wanzhou Zhang

Abstract: Percolation is an important topic in climate, physics, materials science, epidemiology, finance, and so on. Prediction of percolation thresholds with machine learning methods remains challenging. In this paper, we build a powerful graph convolutional neural network to study the percolation in both supervised and unsupervised ways. From a supervised learning perspective, the graph convolutional neu… ▽ More Percolation is an important topic in climate, physics, materials science, epidemiology, finance, and so on. Prediction of percolation thresholds with machine learning methods remains challenging. In this paper, we build a powerful graph convolutional neural network to study the percolation in both supervised and unsupervised ways. From a supervised learning perspective, the graph convolutional neural network simultaneously and correctly trains data of different lattice types, such as the square and triangular lattices. For the unsupervised perspective, combining the graph convolutional neural network and the confusion method, the percolation threshold can be obtained by the "W" shaped performance. The finding of this work opens up the possibility of building a more general framework that can probe the percolation-related phenomenon. △ Less

Submitted 7 April, 2023; v1 submitted 7 July, 2022; originally announced July 2022.

Comments: Data from unsupervised machine learning method need to be re-examined

Observing frustrated quantum magnetism in two-dimensional ion crystals

Authors: Mu Qiao, Zhengyang Cai, Ye Wang, Botao Du, Naijun Jin, Wentao Chen, Pengfei Wang, Chunyang Luan, Erfu Gao, Ximo Sun, Haonan Tian, Jingning Zhang, Kihwan Kim

Abstract: Two-dimensional (2D) quantum magnetism is a paradigm in strongly correlated many-body physics. The understanding of 2D quantum magnetism can be expedited by employing a controllable quantum simulator that faithfully maps 2D-spin Hamiltonians. The 2D quantum simulators can exhibit exotic phenomena such as frustrated quantum magnetism and topological order and can be used to show quantum computation… ▽ More Two-dimensional (2D) quantum magnetism is a paradigm in strongly correlated many-body physics. The understanding of 2D quantum magnetism can be expedited by employing a controllable quantum simulator that faithfully maps 2D-spin Hamiltonians. The 2D quantum simulators can exhibit exotic phenomena such as frustrated quantum magnetism and topological order and can be used to show quantum computational advantages. Many experimental platforms are being developed, including Rydberg atoms and superconducting annealers. However, with trapped-ion systems, which showed the most advanced controllability and quantum coherence, quantum magnetism was explored in one-dimensional chains. Here, we report simulations of frustrated quantum magnetism with 2D ion crystals. We create a variety of spin-spin interactions for quantum magnets, including those that exhibit frustration by driving different vibrational modes and adiabatically prepare the corresponding ground states. The experimentally measured ground states are consistent with the theoretical predictions and are highly degenerate for geometrically frustrated spin models in two dimensions. Quantum coherence of the ground states is probed by reversing the time evolution of the B-field to the initial value and then measuring the extent to which the remaining state coincides with the initial state. Our results open the door for quantum simulations with 2D ion crystals. △ Less

Submitted 14 April, 2022; originally announced April 2022.

Comments: 11 pages, 9 figures

Evidence for Flat Band Dirac Superconductor Originating from Quantum Geometry

Authors: Haidong Tian, Shi Che, Tianyi Xu, Patrick Cheung, Kenji Watanabe, Takashi Taniguchi, Mohit Randeria, Fan Zhang, Chun Ning Lau, Marc W. Bockrath

Abstract: In a flat band superconductor, the charge carriers' group velocity vF is extremely slow, quenching their kinetic energy. The emergence of superconductivity thus appears paradoxical, as conventional BCS theory implies a vanishing coherence length, superfluid stiffness, and critical current. Here, using twisted bilayer graphene (tBLG), we explore the profound effect of vanishingly small vF in a Dira… ▽ More In a flat band superconductor, the charge carriers' group velocity vF is extremely slow, quenching their kinetic energy. The emergence of superconductivity thus appears paradoxical, as conventional BCS theory implies a vanishing coherence length, superfluid stiffness, and critical current. Here, using twisted bilayer graphene (tBLG), we explore the profound effect of vanishingly small vF in a Dirac superconducting flat band system Using Schwinger-limited non-linear transport studies, we demonstrate an extremely slow vF ~ 1000 m/s for filling fraction nu between -1/2 and -3/4 of the moire superlattice. In the superconducting state, the same velocity limit constitutes a new limiting mechanism for the critical current, analogous to a relativistic superfluid. Importantly, our measurement of superfluid stiffness, which controls the superconductor's electrodynamic response, shows that it is not dominated by the kinetic energy, but instead by the interaction-driven superconducting gap, consistent with recent theories on a quantum geometric contribution. We find evidence for small pairs, characteristic of the BCS to Bose-Einstein condensation (BEC) crossover, with an unprecedented ratio of the superconducting transition temperature to the Fermi temperature exceeding unity, and discuss how this arises for very strong coupling superconductivity in ultra-flat Dirac bands. △ Less

Submitted 26 December, 2021; originally announced December 2021.

Comments: 4 figures

The unconventional two-parameter quantum valley pumping in graphene with a topological line defect

Authors: C D Ren, L Cui, W T Lu, H Y Tian, S K Wang

Abstract: Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at… ▽ More Based on the Keldysh Green's function method, we report an unconventional two-parameter quantum pumping in graphene with a line defect. It is found that different from the conventional sinusoidal relation, the pumped current in this device is cosinusoid dependence on the phase difference between the two pumping potentials, which adopts its positive/nagative maximum value at while tends to zero at . This phenomenon is related to the peculiar valley tunneling characteristics across the line defects and the exchange of valley indices on both sides of the line defect. Moreover, the pumped currents from the two valleys will flow in opposite directions along the line defect, indicating that the controllable valley current can be pumped out in the line defect without the application of strain field in graphene. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Comments: 10 pages, 3 figures

Emergence of high-temperature superconductivity at the interface of two Mott insulators

Authors: Lele Ju, Tianshuang Ren, Zhu Li, Zhongran Liu, Chuanyu Shi, Yuan Liu, Siyuan Hong, Jie Wu, He Tian, Yi Zhou, Yanwu Xie

Abstract: Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature superconductivity (HTS) in a complementary and long expected type of heterostructures, which consists of two Mott insulators, La2CuO4 (LCO) and PrBa2Cu3O7 (PBCO). By carefully… ▽ More Interfacial superconductivity has manifested itself in various types of heterostructures: band insulator-band insulator, band insulator-Mott insulator, and Mott insulator-metal. We report the observation of high-temperature superconductivity (HTS) in a complementary and long expected type of heterostructures, which consists of two Mott insulators, La2CuO4 (LCO) and PrBa2Cu3O7 (PBCO). By carefully controlling oxidization condition and selectively doping CuO2 planes with Fe atoms, which suppress superconductivity, we found that the superconductivity arises at the LCO side and is confined within no more than two unit cells (about 2.6 nm) near the interface. A phenomenon of overcome the Fe barrier will show up if excess oxygen is present during growth. Some possible mechanisms for the interfacial HTS have been discussed, and we attribute it to the redistribution of oxygen. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Comments: 11 pages, 4 figures; and Supplementary Materials

Journal ref: Phys. Rev. B 105, 024516 (2022)

Topological charge-entropy scaling in kagome Chern magnet TbMn$_6$Sn$_6$

Authors: Xitong Xu, Jia-Xin Yin, Wenlong Ma, Hong-Ru Tian, Xiao-Bin Qiang, Huibin Zhou, Jie Shen, Haizhou Lu, Tay-Rong Chang, Zhe Qu, Shuang Jia

Abstract: In ordinary materials, electrons conduct both electricity and heat, where their charge-entropy relations observe the Mott formula and the Wiedemann-Franz law. In topological quantum materials, the transverse motion of relativistic electrons can be strongly affected by the quantum field arising around the topological fermions, where a simple model description of their charge-entropy relations remai… ▽ More In ordinary materials, electrons conduct both electricity and heat, where their charge-entropy relations observe the Mott formula and the Wiedemann-Franz law. In topological quantum materials, the transverse motion of relativistic electrons can be strongly affected by the quantum field arising around the topological fermions, where a simple model description of their charge-entropy relations remains elusive. Here we report the topological charge-entropy scaling in the kagome Chern magnet TbMn$_6$Sn$_6$, featuring pristine Mn kagome lattices with strong out-of-plane magnetization. Through both electric and thermoelectric transports, we observe quantum oscillations with a nontrivial Berry phase, a large Fermi velocity and two-dimensionality, supporting the existence of Dirac fermions in the magnetic kagome lattice. This quantum magnet further exhibits large anomalous Hall, anomalous Nernst, and anomalous thermal Hall effects, all of which persist to above room temperature. Remarkably, we show that the charge-entropy scaling relations of these anomalous transverse transports can be ubiquitously described by the Berry curvature field effects in a Chern-gapped Dirac model. Our work points to a model kagome Chern magnet for the proof-of-principle elaboration of the topological charge-entropy scaling. △ Less

Submitted 14 October, 2021; originally announced October 2021.

Comments: 14 pages, 3 figures

Journal ref: Nat. Commun. 13, 1197 (2022)

Atomic structure of the continuous random network of amorphous C[(C6H4)2]2, PAF-1

Authors: Guanqun Cai, He Lin, Ziqiang Zhao, Jiaxun Liu, Anthony E Phillips, Thomas F Headen, Tristan G A Youngs, Yang Hai, Haolai Tian, Chunyong He, Yubin Ke, Juzhou Tao, Teng Ben, Martin T Dove

Abstract: We demonstrate that the amorphous material PAF-1, C[(C6H4)2]2, forms a continuous random network in which tetrahedral carbon sites are connected by 4,4'-biphenyl linkers. Experimental neutron total scattering measurements on deuterated, hydrogenous, and null-scattering samples agree with molecular dynamics simulations based on this model. From the MD model, we are able for the first time to interr… ▽ More We demonstrate that the amorphous material PAF-1, C[(C6H4)2]2, forms a continuous random network in which tetrahedral carbon sites are connected by 4,4'-biphenyl linkers. Experimental neutron total scattering measurements on deuterated, hydrogenous, and null-scattering samples agree with molecular dynamics simulations based on this model. From the MD model, we are able for the first time to interrogate the atomistic structure. The small-angle scattering is consistent with Porod scattering from particle surfaces, of the form Q^{-4}, where Q is the scattering vector. We measure a distinct peak in the scattering at Q = 0.45 Å^{-1}, corresponding to the first sharp diffraction peak in amorphous silica, which indicates the structural analogy between these two amorphous tetrahedral networks. △ Less

Submitted 13 August, 2021; originally announced August 2021.

Comments: 17 pages

Local Manipulation of Polar Skyrmions and Topological Phase Transitions

Authors: Linming Zhou, Yongjun Wu, Sujit Das, Yunlong Tang, Cheng Li, Yuhui Huang, He Tian, Long-Qing Chen, Ramamoorthy Ramesh, Zijian Hong

Abstract: Topological phases such as polar skyrmions have been a fertile playground for ferroelectric oxide superlattices, with exotic physical phenomena such as negative capacitance. Herein, using phase-field simulations, we demonstrate the local control of the skyrmion phase with electric potential applied through a top electrode. Under a relatively small electric potential, the skyrmions underneath the e… ▽ More Topological phases such as polar skyrmions have been a fertile playground for ferroelectric oxide superlattices, with exotic physical phenomena such as negative capacitance. Herein, using phase-field simulations, we demonstrate the local control of the skyrmion phase with electric potential applied through a top electrode. Under a relatively small electric potential, the skyrmions underneath the electrode can be erased and recovered reversibly. A topologically protected transition from the symmetric to asymmetric skyrmion bubbles is observed at the edge of the electrode. While a topological transition to a labyrinthine domain requires a high applied potential, it can switch back to the skyrmion state with a relatively small electric potential. The topological transition from +1 to 0 occurs before the full destruction of the bubble state. It is shown that the shrinking and bursting of the skyrmions leads to a large reduction in the dielectric permittivity, the magnitude of which depends on the size of the electrode. △ Less

Submitted 6 August, 2021; v1 submitted 27 April, 2021; originally announced April 2021.

Comments: 17 Pages 4 figures

Journal ref: Matter, 5(3), 1031-1041 (2022)

Photoinduced multistage phase transitions in Ta2NiSe5

Authors: Q. M. Liu, D. Wu, Z. A. Li, L. Y. Shi, Z. X. Wang, S. J. Zhang, T. Lin, T. C. Hu, H. F. Tian, J. Q. Li, T. Dong, N. L. Wang

Abstract: Utrafast control of material physical properties represents a rapid developing field in condensed matter physics. Yet, accessing to the long-lived photoinduced electronic states is still in its early stage, especially with respect to an insulator to metal phase transition. Here, by combing transport measurement with ultrashort photoexcitation and coherent phonon spectroscopy, we report on photoind… ▽ More Utrafast control of material physical properties represents a rapid developing field in condensed matter physics. Yet, accessing to the long-lived photoinduced electronic states is still in its early stage, especially with respect to an insulator to metal phase transition. Here, by combing transport measurement with ultrashort photoexcitation and coherent phonon spectroscopy, we report on photoinduced multistage phase transitions in Ta2NiSe5. Upon excitation by weak pulse intensity, the system is triggered to a short-lived state accompanied by a structural change. Further increasing the excitation intensity beyond a threshold, a photoinduced steady new state is achieved where the resistivity drops by more than four orders at temperature 50 K. This new state is thermally stable up to at least 350 K and exhibits the lattice structure different from any of the thermally accessible equilibrium states. Transmission electron microscopy reveals an in-chain Ta atom displacement in the photoinduced new structure phase. We also found that nano-sheet samples with the thickness less than the optical penetration depth are required for attaining a complete transition. △ Less

Submitted 10 March, 2021; originally announced March 2021.

Comments: 10 pages, 4 figures, accepted by Nature Communications

Journal ref: Nature Communications12, 2050 (2021)

Observation of two-dimensional superconductivity at the LaAlO3/KTaO3(110) heterointerface

Authors: Zheng Chen, Zhongran Liu, Yanqiu Sun, Xiaoxin Chen, Yuan Liu, Hui Zhang, Hekang Li, Meng Zhang, Siyuan Hong, Tianshuang Ren, Chao Zhang, He Tian, Yi Zhou, Jirong Sun, Yanwu Xie

Abstract: We report on the observation of a Tc ~0.9 K superconductivity at the interface between LaAlO3 film and the 5d transition-metal oxide KTaO3(110) single crystal. The interface shows a large anisotropy of the upper critical field, and its superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition. Both facts suggest that the superconductivity is two-dimensional (2D) in… ▽ More We report on the observation of a Tc ~0.9 K superconductivity at the interface between LaAlO3 film and the 5d transition-metal oxide KTaO3(110) single crystal. The interface shows a large anisotropy of the upper critical field, and its superconducting transition is consistent with a Berezinskii-Kosterlitz-Thouless transition. Both facts suggest that the superconductivity is two-dimensional (2D) in nature. The carrier density measured at 5 K is ~7 time 10^13 cm-2. The superconducting layer thickness and coherence length are estimated to be ~8 and ~30 nm, respectively. Our result provides a new platform for the study of 2D superconductivity at oxide interfaces. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: 10 pages, 4 figures for main text; plus 6 pages, 8 figures for supplemental materials

Journal ref: Phys. Rev. Lett. 126, 026802 (2021)

Electric field control of disorder-tunable superconductivity and the emergence of quantum metal at an oxide interface

Authors: Zheng Chen, Yuan Liu, Hui Zhang, Zhongran Liu, He Tian, Yanqiu Sun, Meng Zhang, Yi Zhou, Jirong Sun, Yanwu Xie

Abstract: We report on an extraordinary field effect of the superconducting LaAlO3/KTaO3(111) interface with Tc ~2 K. By applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped Tc-VG dependence. The electric gating has only a minor effect on carrier density as evidenced in the Hall-effect measurement, while it cha… ▽ More We report on an extraordinary field effect of the superconducting LaAlO3/KTaO3(111) interface with Tc ~2 K. By applying a gate voltage (VG) across KTaO3, the interface can be continuously tuned from superconducting into insulating states, yielding a dome-shaped Tc-VG dependence. The electric gating has only a minor effect on carrier density as evidenced in the Hall-effect measurement, while it changes spatial profile of the carriers in the interface, hence the carrier's disorder level significantly. As temperature is decreased, the resistance saturates at lowest temperature in both superconducting and insulating sides, despite an initial dramatic dropping or increasing, which suggests an emergence of quantum metallic state associated with failed superconductor and/or fragile insulator. A VG-modulation of the magnetic-field-driven superconductor to insulator quantum phase transition reveals a non-universal criticality. △ Less

Submitted 12 September, 2020; originally announced September 2020.

Comments: 11 pages, 4 figures

Journal ref: Science 372, 721-724 (2021)

Strange metal behavior of the Hall angle in twisted bilayer graphene

Authors: Rui Lyu, Zachary Tuchfeld, Nishchhal Verma, Haidong Tian, Kenji Watanabe, Takashi Taniguchi, Chun Ning Lau, Mohit Randeria, Marc Bockrath

Abstract: Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivit… ▽ More Twisted bilayer graphene (TBG) with interlayer twist angles near the magic angle $\approx 1.08^{\circ}$ hosts flat bands and exhibits correlated states including Mott-like insulators, superconductivity and magnetism. Here we report combined temperature-dependent transport measurements of the longitudinal and Hall resistivities in close to magic-angle TBG. While the observed longitudinal resistivity follows linear temperature $T$ dependence consistent with previous reports, the Hall resistance shows an anomalous $T$ dependence with the cotangent of the Hall angle cot $Θ{_H} \propto T^2$. Boltzmann theory for quasiparticle transport predicts that both the resistivity and cot $Θ{_H}$ should have the same $T$ dependence, contradicting the observed behavior. This failure of quasiparticle-based theories is reminiscent of other correlated strange metals such as cuprates. △ Less

Submitted 16 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 103, 245424 (2021)

Direct Visualization of Irreducible Ferrielectricity in Crystals

Authors: Kai Du, Lei Guo, Jin Peng, Xing Chen, Zheng-Nan Zhou, Yang Zhang, Ting Zheng, Yan-Ping Liang, Jun-Peng Lu, Zhen-Hua Ni, Shan-Shan Wang, Gustaaf Van Tendeloo, Ze Zhang, Shuai Dong, He Tian

Abstract: In solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, e.g. ferroelectricity/ferromagnetism, antiferroelectricity/antiferromagnetism, and even dipole-vortex/magnetic-vortex, but ferrielectricity/ferrimagnetism kept telling a disparate story in microscopic level. Since the definition of a charge dipole involves more than one ion, there may be multiple choices for… ▽ More In solids, charge polarity can one-to-one correspond to spin polarity phenomenologically, e.g. ferroelectricity/ferromagnetism, antiferroelectricity/antiferromagnetism, and even dipole-vortex/magnetic-vortex, but ferrielectricity/ferrimagnetism kept telling a disparate story in microscopic level. Since the definition of a charge dipole involves more than one ion, there may be multiple choices for a dipole unit, which makes most ferrielectric orders equivalent to ferroelectric ones, i.e. this ferrielectricity is not necessary to be a real independent branch of polarity. In this work, by using the spherical aberration-corrected scanning transmission electron microscope, we visualize a nontrivial ferrielectric structural evolution in BaFe2Se3, in which the development of two polar sub-lattices is out-of-sync, for which we term it as irreducible ferrielectricity. Such irreducible ferrielectricity leads to a non-monotonic behavior for the temperature-dependent polarization, and even a compensation point in the ordered state. Our finding unambiguously distinguishes ferrielectrics from ferroelectrics in solids. △ Less

Submitted 24 July, 2020; originally announced July 2020.

Comments: 15 figures

Journal ref: NPJ Quantum Materials 5, 49 (2020)

Helical Edge States and Quantum Phase Transitions in Tetralayer Graphene

Authors: Shi Che, Yanmeng Shi, Jiawei Yang, Haidong Tian, Ruoyu Chen, Takashi Taniguchi, Kenji Watanabe, Dmitry Smirnov, Chun Ning Lau, Efrat Shimshoni, Ganpathy Murthy, Herbert A. Fertig

Abstract: Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insul… ▽ More Helical conductors with spin-momentum locking are promising platforms for Majorana fermions. Here we report observation of two topologically distinct phases supporting helical edge states in charge neutral Bernal-stacked tetralayer graphene in Hall bar and Corbino geometries. As the magnetic field B and out-of-plane displacement field D are varied, we observe a phase diagram consisting of an insulating phase and two metallic phases, with 0, 1 and 2 helical edge states, respectively. These phases are accounted for by a theoretical model that relates their conductance to spin-polarization plateaus. Transitions between them arise from a competition among inter-layer hopping, electrostatic and exchange interaction energies. Our work highlights the complex competing symmetries and the rich quantum phases in few-layer graphene. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Comments: Accepted by PRL

Journal ref: Phys. Rev. Lett. 125, 036803 (2020)

Efficient light-emitting diodes based on oriented perovskite nanoplatelets

Authors: Jieyuan Cui, Yang Liu, Yunzhou Deng, Chen Lin, Zhishan Fang, Chensheng Xiang, Peng Bai, Kai Du, Xiaobing Zuo, Kaichuan Wen, Shaolong Gong, Haiping He, Zhizhen Ye, Yunan Gao, He Tian, Baodan Zhao, Jianpu Wang, Yizheng Jin

Abstract: Solution-processed planar perovskite light-emitting diodes (LEDs) promise high-performance and cost-effective electroluminescent (EL) devices ideal for large-area display and lighting applications. Exploiting emission layers with high ratios of horizontal transition dipole moments (TDMs) is expected to boost photon outcoupling of planar LEDs. However, LEDs based on anisotropic perovskite nanoemitt… ▽ More Solution-processed planar perovskite light-emitting diodes (LEDs) promise high-performance and cost-effective electroluminescent (EL) devices ideal for large-area display and lighting applications. Exploiting emission layers with high ratios of horizontal transition dipole moments (TDMs) is expected to boost photon outcoupling of planar LEDs. However, LEDs based on anisotropic perovskite nanoemitters remains to be inefficient (external quantum efficiency, EQE <5%), due to the difficulties of simultaneously controlling the orientations of TDMs, achieving high photoluminescence quantum yields (PLQYs) and realizing charge balance in the films of the assembled nanostructures. Here we demonstrate efficient EL from an in-situ grown continuous perovskite film comprising of a monolayer of face-on oriented nanoplatelets. The ratio of horizontal TDMs of the perovskite nanoplatelet films is ~84%, substantially higher than that of isotropic emitters (67%). The nanoplatelet film shows a high PLQY of ~75%. These merits enable LEDs with a peak EQE of 23.6%, representing the most efficient perovskite LEDs. △ Less

Submitted 22 September, 2021; v1 submitted 13 June, 2020; originally announced June 2020.

Comments: 52 pages, 23 figures

Direct observations of chiral spin textures in van der Waals magnet Fe3GeTe2 nanolayers

Authors: Hong Wang, Cuixiang Wang, Yan Zhu, Zi-An Li, Hongbin Zhang, Huanfang Tian, Youguo Shi, Huaixin Yang, Jianqi Li

Abstract: In two-dimensional van der Waals (vdW) magnets, the presence of magnetic orders, strong spin-orbit coupling and asymmetry at interfaces is the key ingredient for hosting chiral spin textures. However, experimental evidences for chiral magnetism in vdW magnets remain elusive. Here we demonstrate unambiguously the formation of chiral spin textures in thin Fe3GeTe2 nanoflakes using advanced magnetic… ▽ More In two-dimensional van der Waals (vdW) magnets, the presence of magnetic orders, strong spin-orbit coupling and asymmetry at interfaces is the key ingredient for hosting chiral spin textures. However, experimental evidences for chiral magnetism in vdW magnets remain elusive. Here we demonstrate unambiguously the formation of chiral spin textures in thin Fe3GeTe2 nanoflakes using advanced magnetic electron microscopy and first-principles calculations. Specifically, electron holography analyses reveal the spin configurations of Néel-type, zero-field-stabilized skyrmions in 20-nm-thick Fe3GeTe2 nanoflakes at cryogenic temperature. In situ Lorentz transmission electron microscopy measurements further provide detailed magnetic phase diagrams of chiral spin textures including spirals and skyrmions in Fe3GeTe2 as a function of temperature, applied magnetic field and specimen thickness. First-principles calculations unveil a finite interfacial Dzyaloshinskii-Moriya interaction in the Te/Fe3Ge/Te slabs that induces the spin chirality in Fe3GeTe2. Our discovery of spin chirality in the prototypical vdW Fe3GeTe2 opens up new opportunities for studying chiral magnetism in two-dimensional vdW magnets from both fundamental and applied perspectives. △ Less

Submitted 19 July, 2019; originally announced July 2019.

Comments: 26 pages, 4 figures

Correlated Insulating and Superconducting States in Twisted Bilayer Graphene Below the Magic Angle

Authors: Emilio Codecido, Qiyue Wang, Ryan Koester, Shi Che, Haidong Tian, Rui Lv, Son Tran, Kenji Watanabe, Takashi Taniguchi, Fan Zhang, Marc Bockrath, Chun Ning Lau

Abstract: The emergence of flat bands and correlated behaviors in 'magic angle' twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of approximately 0.93, which is smaller than the magic angle by 15%. At an electr… ▽ More The emergence of flat bands and correlated behaviors in 'magic angle' twisted bilayer graphene (tBLG) has sparked tremendous interest, though many aspects of the system are under intense debate. Here we report observation of both superconductivity and the Mott-like insulating state in a tBLG device with a twist angle of approximately 0.93, which is smaller than the magic angle by 15%. At an electron concentration of +/-5 electrons per moire unit cell, we observe a narrow resistance peak with an activation energy gap of approximately 0.1 meV, indicating the existence of an additional correlated insulating state. This is consistent with theory predicting the presence of a high-energy band with an energetically flat dispersion. At a doping of +/-12 electrons per moire unit cell we observe a resistance peak due to the presence of Dirac points in the spectrum. Our results reveal that the magic range of tBLG is in fact larger than what is previously expected, and provide a wealth of new information to help decipher the strongly correlated phenomena observed in tBLG. △ Less

Submitted 13 February, 2019; originally announced February 2019.

Possible structural origin of superconductivity in Sr-doped Bi2Se3

Authors: Zhuojun Li, Meng Wang, Dejiong Zhang, Nan Feng, Wenxiang Jiang, Chaoqun Han, Weijiong Chen, Mao Ye, Chunlei Gao, Jinfeng Jia, Jixue Li, Shan Qiao, Dong Qian, Ben Xu, He Tian, Bo Gao

Abstract: Doping bismuth selenide (Bi2Se3) with elements such as copper and strontium (Sr) can induce superconductivity, making the doped materials interesting candidates to explore potential topological superconducting behaviors. It was thought that the superconductivity of doped Bi2Se3 was induced by dopant atoms intercalated in van der Waals gaps. However, several experiments have shown that the intercal… ▽ More Doping bismuth selenide (Bi2Se3) with elements such as copper and strontium (Sr) can induce superconductivity, making the doped materials interesting candidates to explore potential topological superconducting behaviors. It was thought that the superconductivity of doped Bi2Se3 was induced by dopant atoms intercalated in van der Waals gaps. However, several experiments have shown that the intercalation of dopant atoms may not necessarily make doped Bi2Se3 superconducting. Thus, the structural origin of superconductivity in doped Bi2Se3 remains an open question. Herein, we combined material synthesis and characterization, high-resolution transmission electron microscopy, and first-principles calculations to study the doping structure of Sr-doped Bi2Se3. We found that the emergence of superconductivity is strongly related with n-type dopant atoms. Atomic-level energy-dispersive X-ray mapping revealed various n-type Sr dopants that occupy intercalated and interstitial positions. First-principles calculations showed that the formation energy of a specific interstitial Sr doping position depends strongly on Sr doping level. This site changes from a metastable position at low Sr doping level to a stable position at high Sr doping level. The calculation results explain why quenching is necessary to obtain superconducting samples when the Sr doping level is low and also why slow furnace cooling can yield superconducting samples when the Sr doping level is high. Our findings suggest that Sr atoms doped at interstitial locations, instead of those intercalated in van der Waals gaps, are most likely to be responsible for the emergence of superconductivity in Sr-doped Bi2Se3. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Comments: 21 pages, 4 figures

Journal ref: Phys. Rev. Materials 2, 014201(2018)

Integer quantum Hall effect and topological phase transitions in silicene

Authors: Y. L. Liu, G. X. Luo, N. Xu, H. Y. Tian, C. D. Ren

Abstract: We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus ca… ▽ More We numerically investigate the effects of disorder on the quantum Hall effect (QHE) and the quantum phase transitions in silicene based on a lattice model. It is shown that for a clean sample, silicene exhibits an unconventional QHE near the band center, with plateaus developing at $ν=0,\pm2,\pm6,\ldots,$ and a conventional QHE near the band edges. In the presence of disorder, the Hall plateaus can be destroyed through the float-up of extended levels toward the band center, in which higher plateaus disappear first. However, the center $ν=0$ Hall plateau is more sensitive to disorder and disappears at a relatively weak disorder strength. Moreover, the combination of an electric field and the intrinsic spin-orbit interaction (SOI) can lead to quantum phase transitions from a topological insulator to a band insulator at the charge neutrality point (CNP), accompanied by additional quantum Hall conductivity plateaus. △ Less

Submitted 14 December, 2017; originally announced December 2017.

Comments: 7 pages, 4 figures

Journal ref: Condens. Matter Phys., 2017, vol. 20, No. 4, 43701

Atomically-thin Femtojoule Filamentary Memristor

Authors: Huan Zhao, Zhipeng Dong, He Tian, Don DiMarzio, Myung-Geun Han, Lihua Zhang, Xiaodong Yan, Fanxin Liu, Lang Shen, Shu-jen Han, Steve Cronin, Wei Wu, Jesse Tice, Jing Guo, Han Wang

Abstract: The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the operating current, voltage and energy consumption in filamentary type memristors. Previously, the thickness of this filament layer has been limited to above a… ▽ More The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical towards reducing the operating current, voltage and energy consumption in filamentary type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. Here, we study the formation of conductive filaments in a material medium with sub-nanometer thickness, formed through the oxidation of atomically-thin two-dimensional boron nitride. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, we observe current switching characteristics that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. These ultra-low energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultra-low power operation. △ Less

Submitted 12 September, 2017; originally announced September 2017.

Comments: 19 pages, 4 figures, Advanced Materials, in press

The perfect spin injection in silicene FS/NS junction

Authors: H. -Y. Tian, N. Xu, G. Luo, Ch. -D. Ren

Abstract: We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is… ▽ More We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed light on making silicene-based spin and valley devices in the spintronics and valleytronics field. △ Less

Submitted 22 June, 2017; originally announced June 2017.

Comments: 6 pages, 3 figures

Journal ref: Condens. Matter Phys., vol. 20, No. 2, 23702 (2017)

One-dimensional phosphorus chain and two-dimensional blue phosphorene grown on Au(111) by molecular-beam epitaxy

Authors: Jin-Peng Xu, Jun-Qiu Zhang, Hao Tian, Hu Xu, Wingkin Ho, Maohai Xie

Abstract: Single layer (SL) phosphorus (phosphorene) has drawn considerable research attention recently as a two-dimensional (2D) material for application promises. It is a semiconductor showing superior transport and optical properties. Few-layer or SL black phosphorus has been successfully isolated by exfoliation from bulk crystals and extensively studied thereof for its electronic and optical properties.… ▽ More Single layer (SL) phosphorus (phosphorene) has drawn considerable research attention recently as a two-dimensional (2D) material for application promises. It is a semiconductor showing superior transport and optical properties. Few-layer or SL black phosphorus has been successfully isolated by exfoliation from bulk crystals and extensively studied thereof for its electronic and optical properties. Blue phosphorus (blueP), an allotrope of black phosphorus where atoms are arranged in a more flat atomic configuration, has been recently suggested by theory to exist in the SL form on some substrates. In this work, we report the formation of a blueP-like epilayer on Au(111) by molecular-beam epitaxy. In particular, we uncover by scanning tunneling microscopy (STM) one-dimensional (1D) atomic chains at low coverage, which develop into more compact islands or patches of $(\sqrt{3}\times\sqrt{3})R30^\circ$ structure with increasing coverage before blueP-like islands nucleate and grow. We also note an interesting growth characteristic where the $(\sqrt{3}\times\sqrt{3})R30^\circ$ surface at intermediate coverage tends to phase-separate into locally low-coverage 1D chain and high-coverage blueP-like structures, respectively. This experiment thus not only lends a support of the recently proposed half-layer by half-layer (HLBHL) growth mechanism but also reveals the kinetic details of blueP growth processes. △ Less

Submitted 22 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Materials 1, 061002 (2017)

Interfacial Multiferroics of TiO2/PbTiO3 Heterostructure Driven by Ferroelectric Polarization Discontinuity

Authors: Fang Wang, Zhaohui Ren, He Tian, Shengyuan A. Yang, Yanwu Xie, Yunhao Lu, Jianzhong Jiang, Gaorong Han, Kesong Yang

Abstract: Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO3/SrTiO3, two dimensional conductive states form to avoid the polar discontinuity and magnetic properties are found at such interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a conductive sta… ▽ More Novel phenomena appear when two different oxide materials are combined together to form an interface. For example, at the interface of LaAlO3/SrTiO3, two dimensional conductive states form to avoid the polar discontinuity and magnetic properties are found at such interface. In this work, we propose a new type of interface between two nonmagnetic and nonpolar oxides that could host a conductive state with magnetic properties, where it is the ferroelectric polarization discontinuity instead of the polar discontinuity that leads to the charge transfer, forming the interfacial conductive or magnetic states. As a concrete example, we investigate by first-principles calculations the heterostructures made of ferroelectric perovskite oxide PbTiO3 and non-ferroelectric polarized oxides TiO2. We show that charge is transferred to the interfacial layer forming an interfacial conductive state with ferromagnetic ordering that may persist up to room temperature. Especially, the strong coupling between bulk ferroelectric polarization and interface ferromagnetism represents a new type of magnetoelectric effect, which provides an ideal platform for exploring the intriguing interfacial multiferroics. The findings here are important not only for fundamental science but also for promising applications in nanoscale electronics and spintronics. △ Less

Submitted 21 February, 2017; originally announced February 2017.

Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus

Authors: Bolin Liao, Huan Zhao, Ebrahim Najafi, Xiaodong Yan, He Tian, Jesse Tice, Austin J. Minnich, Han Wang, Ahmed H. Zewail

Abstract: As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its widely tunable bandgap, polarization dependent photoresponse and highly anisotropic in-plane charge transport. Despite extensive study of the steady-state charge t… ▽ More As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its widely tunable bandgap, polarization dependent photoresponse and highly anisotropic in-plane charge transport. Despite extensive study of the steady-state charge transport in BP, there has not been direct characterization and visualization of the hot carriers dynamics in BP immediately after photoexcitation, which is crucial to understanding the performance of BP-based optoelectronic devices. Here we use the newly developed scanning ultrafast electron microscopy (SUEM) to directly visualize the motion of photo-excited hot carriers on the surface of BP in both space and time. We observe highly anisotropic in-plane diffusion of hot holes, with a 15-times higher diffusivity along the armchair (x-) direction than that along the zigzag (y-) direction. Our results provide direct evidence of anisotropic hot carrier transport in BP and demonstrate the capability of SUEM to resolve ultrafast hot carrier dynamics in layered two-dimensional materials. △ Less

Submitted 19 February, 2017; originally announced February 2017.

Comments: 21 pages, 6 figures

Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications

Authors: He Tian, Jesse Tice, Ruixiang Fei, Vy Tran, Xiaodong Yan, Li Yang, Han Wang

Abstract: In this review article, we discuss the synthesis, properties, and novel device applications of low-symmetry 2D materials, including black phosphorus and its arsenic alloys, compounds with black-phosphorus like structure such as the monochalcogenides of group IV elements like Ge and Sn, as well as the class of low-symmetry transition metal dichalcogenide (TMDC) materials such as rhenium disulfide (… ▽ More In this review article, we discuss the synthesis, properties, and novel device applications of low-symmetry 2D materials, including black phosphorus and its arsenic alloys, compounds with black-phosphorus like structure such as the monochalcogenides of group IV elements like Ge and Sn, as well as the class of low-symmetry transition metal dichalcogenide (TMDC) materials such as rhenium disulfide (ReS2) and rhenium diselenide (ReSe2). Their unique physical properties resulting from the low symmetry in-plane crystal structure and the prospects of their application in nanoelectronics and nanophotonics, as well as piezoelectric devices and thermoelectrics are discussed. △ Less

Submitted 2 February, 2017; originally announced February 2017.

Comments: 37 pages, 7 figures

Journal ref: Publised at Nano Today, Vol. 11, Page. 763-777 (2016)

An Anomalous Circular Photogalvanic Effect in the Weyl Semimetal TaAs

Authors: Kai Sun, Shuaishuai Sun, Cong Guo, Linlin Wei, Huanfang Tian, Huaixin Yang, Genfu Chen, Jianqi Li

Abstract: Weyl semimetal (WSM) is expected to be an ideal spintronic material owing to its spin currents carried by the bulk and surface states with spin-momentum locking. A photocurrent generation in noncentrosymmetric WSM was also predicted owing to its broken inversion symmetry and linear energy dispersion which are unique to Weyl systems. In our recent measurements, the circular photogalvanic effect (CP… ▽ More Weyl semimetal (WSM) is expected to be an ideal spintronic material owing to its spin currents carried by the bulk and surface states with spin-momentum locking. A photocurrent generation in noncentrosymmetric WSM was also predicted owing to its broken inversion symmetry and linear energy dispersion which are unique to Weyl systems. In our recent measurements, the circular photogalvanic effect (CPGE) has been demonstrated in WSM of TaAs. The CPGE voltage is proportional to the helicity of the incident light and reverses its direction on changing the radiation helicity from left handed to right handed, a periodical oscillation therefore appears following with the alteration of optical polarization. We herein attribute the CPGE to the asymmetric optical excitation of the Weyl cone, which could result in an asymmetric distribution of photoexcited carriers in momentum space according to an optical spin selection rule. △ Less

Submitted 19 March, 2017; v1 submitted 21 December, 2016; originally announced December 2016.

Comments: This paper has been withdrawn by the author due to some crucial errors

Efficient Electrical Control of Thin-Film Black Phosphorus Bandgap

Authors: Bingchen Deng, Vy Tran, Hao Jiang, Cheng Li, Yujun Xie, Qiushi Guo, Xiaomu Wang, He Tian, Han Wang, Judy J. Cha, Qiangfei Xia, Li Yang, Fengnian Xia

Abstract: Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments performed on doped black phosphorus through potassium adsorption indicate that… ▽ More Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical phenomena. However, theoretical investigations and photoemission spectroscopy experiments performed on doped black phosphorus through potassium adsorption indicate that in its few-layer form, an exceedingly large electric field in the order of several volts per nanometer is required to effectively tune its bandgap, making the direct electrical control unfeasible. Here we demonstrate the tuning of bandgap in intrinsic black phosphorus using an electric field directly and reveal the unique thickness-dependent bandgap tuning properties, arising from the strong interlayer electronic-state coupling. Furthermore, leveraging a 10-nm-thick black phosphorus in which the field-induced potential difference across the film dominates over the interlayer coupling, we continuously tune its bandgap from ~300 to below 50 milli-electron volts, using a moderate displacement field up to 1.1 volts per nanometer. Such dynamic tuning of bandgap may not only extend the operational wavelength range of tunable black phosphorus photonic devices, but also pave the way for the investigation of electrically tunable topological insulators and topological nodal semimetals. △ Less

Submitted 13 December, 2016; originally announced December 2016.

Journal ref: Nat. Commun. 8, 14474 (2017)

Black Phosphorus Mid-Infrared Photodetectors with High Gain

Authors: Qiushi Guo, Andreas Pospischil, Maruf Bhuiyan, Hao Jiang, He Tian, Damon Farmer, Bingchen Deng, Cheng Li, Shu-Jen Han, Han Wang, Qiangfei Xia, Tso-Ping Ma, Thomas Mueller, Fengnian Xia

Abstract: Recently, black phosphorus (BP) has joined the two dimensional material family as a promising candidate for photonic applications, due to its moderate bandgap, high carrier mobility, and compatibility with a diverse range of substrates. Photodetectors are probably the most explored BP photonic devices, however, their unique potential compared with other layered materials in the mid-infrared wavele… ▽ More Recently, black phosphorus (BP) has joined the two dimensional material family as a promising candidate for photonic applications, due to its moderate bandgap, high carrier mobility, and compatibility with a diverse range of substrates. Photodetectors are probably the most explored BP photonic devices, however, their unique potential compared with other layered materials in the mid-infrared wavelength range has not been revealed. Here, we demonstrate BP mid infrared detectors at 3.39 um with high internal gain, resulting in an external responsivity of 82 A/W. Noise measurements show that such BP photodetectors are capable of sensing low intensity mid-infrared light in the picowatt range. Moreover, the high photoresponse remains effective at kilohertz modulation frequencies, because of the fast carrier dynamics arising from BPs moderate bandgap. The high photoresponse at mid infrared wavelengths and the large dynamic bandwidth, together with its unique polarization dependent response induced by low crystalline symmetry, can be coalesced to promise photonic applications such as chip-scale mid-infrared sensing and imaging at low light levels. △ Less

Submitted 23 March, 2016; originally announced March 2016.

Journal ref: Nano Lett., 2016, 16 (7), pp 4648-4655

Anisotropic Black Phosphorus Synaptic Device for Neuromorphic Applications

Authors: He Tian, Qiushi Guo, Yunjun Xie, Huan Zhao, Cheng Li, Judy J. Cha, Fengnian Xia, Han Wang

Abstract: Synapses are functional links between neurons, through which "information" flows in the neural network. These connections vary significantly in strength, typically resulting from the intrinsic heterogeneity in their chemical and biological properties. Such heterogeneity is fundamental to the diversity of neural activities, which together with other features of the brain enables functions ranging f… ▽ More Synapses are functional links between neurons, through which "information" flows in the neural network. These connections vary significantly in strength, typically resulting from the intrinsic heterogeneity in their chemical and biological properties. Such heterogeneity is fundamental to the diversity of neural activities, which together with other features of the brain enables functions ranging from perception and recognition, to memory and reasoning. Realizing such heterogeneity in synaptic electronics is critical towards building artificial neural network with the potential for achieving the level of complexity in biological systems. However, such intrinsic heterogeneity has been very challenging to realize in current synaptic devices. Here, we demonstrate the first black phosphorus (BP) synaptic device, which offers intrinsic anisotropy in its synaptic characteristics directly resulting from its low crystal symmetry. The charge transfer between the 2-nm native oxide of BP and the BP channel is utilized to achieve the synaptic behavior. Key features of biological synapses such as long-term plasticity with heterogeneity, including long-term potentiation/depression and spike-timing-dependent plasticity, are mimicked. With the anisotropic BP synaptic devices, we also realize a simple compact heterogeneous axon-multi-synapses network. This demonstration represents an important step towards introducing intrinsic heterogeneity to artificial neuromorphic systems. △ Less

Submitted 12 March, 2016; originally announced March 2016.

Comments: 24 pages, 7 figures, Advanced Materials, In press

Nature of charge density waves and superconductivity in 1\emph{T}-TaSe$_{2-x}$Te$_x$

Authors: Y. Liu, D. F. Shao, L. J. Li, W. J. Lu, X. D. Zhu, P. Tong, R. C. Xiao, L. S. Ling, C. Y. Xi, L. Pi, H. F. Tian, H. X. Yang, J. Q. Li, W. H. Song, X. B. Zhu, Y. P. Sun

Abstract: Transition-metal dichalcogenides (TMDs) $MX_2$ ($M$ = Ti, Nb, Ta; $X$ = S, Se, Te) exhibit a rich set of charge density wave (CDW) orders, which usually coexist and/or compete with superconductivity. The mechanisms of CDWs and superconductivity in TMDs are still under debate. Here we perform an investigation on a typical TMD system, 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). Doping-induced… ▽ More Transition-metal dichalcogenides (TMDs) $MX_2$ ($M$ = Ti, Nb, Ta; $X$ = S, Se, Te) exhibit a rich set of charge density wave (CDW) orders, which usually coexist and/or compete with superconductivity. The mechanisms of CDWs and superconductivity in TMDs are still under debate. Here we perform an investigation on a typical TMD system, 1\emph{T}-TaSe$_{2-x}$Te$_x$ ($0 \leq x \leq 2$). Doping-induced disordered distribution of Se/Te suppresses CDWs in 1\emph{T}-TaSe$_2$. A domelike superconducting phase with the maximum $T_\textrm{c}^{\textrm{onset}}$ of 2.5 K was observed near CDWs. The superconducting volume is very small inside the CDW phase and becomes very large instantly when the CDW phase is fully suppressed. The observations can be understood based on the strong \emph{\textbf{q}}-dependent electron-phonon coupling-induced periodic-lattice-distortion (PLD) mechanism of CDWs. The volume variation of superconductivity implies the emergence of domain walls in the suppressing process of CDWs. Our concluded scenario makes a fundamental understanding about CDWs and related superconductivity in TMDs. △ Less

Submitted 21 July, 2016; v1 submitted 25 February, 2016; originally announced February 2016.

Journal ref: Phys. Rev. B 94, 045131 (2016)

Ultrafast transmission electron microscopy on dynamic process of a CDW transition in 1T-TaSe2

Authors: Shuaishuai Sun, Linlin Wei, Zhongwen Li, Gaolong Cao, Y. Liu, W. J. Lu, Y. P. Sun, Huanfang Tian, HuaixinYang, Jianqi Li

Abstract: Four-dimensional ultrafast transmission electron microscopy (4D-UTEM) measurements reveal a rich variety of structural dynamic phenomena at a phase transition in the charge-density-wave (CDW) 1T-TaSe2. Through the photoexcitation, remarkable changes on both the CDW intensity and orientation are clearly observed associated with the transformation from a commensurate (C) into an incommensurate (IC)… ▽ More Four-dimensional ultrafast transmission electron microscopy (4D-UTEM) measurements reveal a rich variety of structural dynamic phenomena at a phase transition in the charge-density-wave (CDW) 1T-TaSe2. Through the photoexcitation, remarkable changes on both the CDW intensity and orientation are clearly observed associated with the transformation from a commensurate (C) into an incommensurate (IC) phase in a time-scale of about 3 ps. Moreover, the transient states show up a notable "structurally isosbestic point" at a wave vector of qiso where the C and IC phases yield their diffracting efficiencies in an equally ratio. This fact demonstrates that the crystal planes parallel to qiso adopts visibly common structural features in these two CDW phases. The second-order characters observed in this nonequilibrium phase transition have been also analyzed based on the time-resolved structural data. △ Less

Submitted 20 May, 2015; originally announced May 2015.

Comments: 16 pages, 4 figures

Journal ref: Phys. Rev. B 92, 224303 (2015)

Unconventional interfacial superconductivity in epitaxial Bi/Ni heterostructures

Authors: Xin-Xin Gong, Hexin Zhou, Peng-Chao Xu, Di Yue, Kai Zhu, Xiaofeng Jin, He Tian, Gejian Zhao, Ting-Yong Chen

Abstract: Superconductivity (SC) is one of the most intriguing physical phenomena in nature. Nucleation of SC has long been considered highly unfavorable if not impossible near ferromagnetism, in low dimensionality and, above all, out of non-superconductor. Here we report observation of SC with TC near 4 K in Ni/Bi bilayers that defies all known paradigms of superconductivity, where neither ferromagnetic Ni… ▽ More Superconductivity (SC) is one of the most intriguing physical phenomena in nature. Nucleation of SC has long been considered highly unfavorable if not impossible near ferromagnetism, in low dimensionality and, above all, out of non-superconductor. Here we report observation of SC with TC near 4 K in Ni/Bi bilayers that defies all known paradigms of superconductivity, where neither ferromagnetic Ni film nor rhombohedra Bi film is superconducting in isolation. This highly unusual SC is independent of the growth order (Ni/Bi or Bi/Ni), but highly sensitive to the constituent layer thicknesses. Most importantly, the SC, distinctively non-s pairing, is triggered from, but does not occur at, the Bi/Ni interface. Using point contact Andreev reflection, we show evidences that the unique SC, naturally compatible with magnetism, is triplet p-wave pairing. This new revelation may lead to unconventional avenues to explore novel SC for applications in superconducting spintronics. △ Less

Submitted 18 April, 2015; v1 submitted 16 April, 2015; originally announced April 2015.

Comments: 16 pages, 4 figures

Clocking the anisotropic lattice dynamics of multi-walled carbon nanotubes by four-dimensional ultrafast transmission electron microscopy

Authors: Gaolong Cao, Shuaishuai Sun, Zhongwen Li, Huanfang Tian, Huaixin Yang, Jianqi Li

Abstract: Recent advances in the four-dimensional ultrafast transmission electron microscope (4D-UTEM) with combined spatial and temporal resolutions have made it possible to directly visualize structural dynamics of materials at the atomic level. Herein, we report on our development on a 4D-UTEM which can be operated properly on either the photo-emission or the thermionic mode. We demonstrate its ability t… ▽ More Recent advances in the four-dimensional ultrafast transmission electron microscope (4D-UTEM) with combined spatial and temporal resolutions have made it possible to directly visualize structural dynamics of materials at the atomic level. Herein, we report on our development on a 4D-UTEM which can be operated properly on either the photo-emission or the thermionic mode. We demonstrate its ability to obtain sequences of snapshots with high spatial and temporal resolutions in the study of lattice dynamics of the multi-walled carbon nanotubes (MWCNTs). This investigation provides an atomic level description of remarkable anisotropic lattice dynamics at the picosecond timescales. Moreover, our UTEM measurements clearly reveal that distinguishable lattice relaxations appear in intra-tubular sheets on an ultrafast timescale of a few picoseconds and after then an evident lattice expansion along the radical direction. These anisotropic behaviors in the MWCNTs are considered arising from the variety of chemical bonding, i.e. the weak van der Waals bonding between the tubular planes and the strong covalent sp2-hybridized bonds in the tubular sheets. △ Less

Submitted 31 October, 2014; originally announced October 2014.

Comments: 23pages,5figures,includes 4pages supplementary information

Hot pressing to enhance the transport Jc of Sr0.6K0.4Fe2As2 superconducting tapes

Authors: He Lin, Chao Yao, Xianping Zhang, Chiheng Dong, Haitao Zhang, Dongliang Wang, Qianjun Zhang, Yanwei Ma, Satoshi Awaji, Kazuo Watanabe, Huanfang Tian, Jianqi Li

Abstract: High-performance Sr0.6K0.4Fe2As2 (Sr-122) tapes have been successfully fabricated using hot pressing (HP) process. The effect of HP temperatures (850-925 C) on the c-axis texture, resistivity, Vickers micro-hardness, microstructure and critical current properties has been systematically studied. Taking advantage of high degree of c-axis texture, well grain connectivity and and large concentration… ▽ More High-performance Sr0.6K0.4Fe2As2 (Sr-122) tapes have been successfully fabricated using hot pressing (HP) process. The effect of HP temperatures (850-925 C) on the c-axis texture, resistivity, Vickers micro-hardness, microstructure and critical current properties has been systematically studied. Taking advantage of high degree of c-axis texture, well grain connectivity and and large concentration of strong-pinning defects, we are able to obtain an excellent Jc of 1.2x10^5 A/cm^2 at 4.2 K and 10 T for Sr-122 tapes. More importantly, the field dependence of Jc turns out to be very weak, such that in 14 T the Jc remains ~1.0x10^5 A/cm^2. These Jc values are the highest ever reported so far for iron-pnictide wires and tapes, achieving the level desired for practical applications. Our results clearly strengthen the position of iron-pnictide conductors as a competitor to the conventional and MgB2 superconductors for high field applications. △ Less

Submitted 1 December, 2014; v1 submitted 19 August, 2014; originally announced August 2014.

Comments: 21 pages, 7 figures

Journal ref: Scientific Reports 4 (2014) 6944

Shaping electron beams for the generation of innovative measurements in the (S)TEM

Authors: Jo Verbeeck, Giulio Guzzinati, Laura Clark, Roeland Juchtmans, Ruben Van Boxem, He Tian, Armand Béché, Axel Lubk, Gustaaf Van Tendeloo

Abstract: In TEM, a typical goal consists of making a small electron probe in the sample plane in order to obtain high spatial resolution in scanning transmission electron microscopy. In order to do so, the phase of the electron wave is corrected to resemble a spherical wave compensating for aberrations in the magnetic lenses. In this contribution we discuss the advantage of changing the phase of an electro… ▽ More In TEM, a typical goal consists of making a small electron probe in the sample plane in order to obtain high spatial resolution in scanning transmission electron microscopy. In order to do so, the phase of the electron wave is corrected to resemble a spherical wave compensating for aberrations in the magnetic lenses. In this contribution we discuss the advantage of changing the phase of an electron wave in a specific way in order to obtain fundamentally different electron probes opening up new application in the (S)TEM. We focus on electron vortex states as a specific family of waves with an azimuthal phase signature and discuss their properties, production and applications. The concepts presented here are rather general and also different classes of probes can be obtained in a similar fashion showing that electron probes can be tuned to optimise a specific measurement or interaction. △ Less

Submitted 21 March, 2014; originally announced March 2014.

Journal ref: Comptes Rendus Physique, 15(2-3), 190-199. (2014)