Showing 1–29 of 29 results for author: Lany, S

Thin Film Synthesis, Structural Analysis, and Magnetic Properties of Novel Ternary Transition Metal Nitride MnCoN2

Authors: Sita Dugu, Rebecca W Smaha, Shaham Quadir, Andrew Treglia, Shaun ODonnell, Julia Martin, Sharad Mahatara, Glenn Teeter, Stephan Lany, James R Neilson, Sage R Bauers

Abstract: Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary… ▽ More Recent high-throughput computational searches have predicted many novel ternary nitride compounds providing new opportunities for materials discovery in under explored phase spaces. Nevertheless, there are hardly any predictions and/or syntheses that incorporate only transition metals into new ternary nitrides. Here, we report on the synthesis, structure, and properties of MnCoN$_2$, a new ternary nitride material comprising only transition metals and N. We find that crystalline MnCoN$_2$ can be stabilized over its competing binaries, and over a tendency of this system to become amorphous, by controlling growth temperature within a narrow window slightly above ambient condition. We find that single-phase MnCoN$_2$ thin films form in a cation-disordered rocksalt crystal structure, which is supported by ab-initio calculations. X-ray photoelectron spectroscopy analysis suggests that MnCoN$_2$ is sensitive to oxygen through various oxides and hydroxides binding to cobalt on the surface. X-ray absorption spectroscopy is used to verify that Mn$^{3+}$ and Co$^{3+}$ cations exist in an octahedrally-coordinated environment, which is distinct from a combination of CoN and MnN binaries and in agreement with the rocksalt-based crystal structure prediction. Magnetic measurements suggest that MnCoN$_2$ has a canted antiferromagnetic ground state below 10 K. We extract a Weiss temperature of $θ$ = -49.7 K, highlighting the antiferromagnetic correlations in MnCoN$_2$. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Multiple Slater determinants and strong spin-fluctuations as key ingredients of the electronic structure of electron- and hole-doped Pb$_{10-x}$Cu$_x$(PO4)$_6$O

Authors: Dimitar Pashov, Swagata Acharya, Stephan Lany, Daniel S. Dessau, Mark van Schilfgaarde

Abstract: LK-99, with chemical formula Pb$_{10-x}$Cu$_x$(PO4)$_6$O, was recently reported to be a room-temperature superconductor. While this claim has met with little support in a flurry of ensuing work, a variety of calculations (mostly based on density-functional theory) have demonstrated that the system possesses some unusual characteristics in the electronic structure, in particular flat bands. We have… ▽ More LK-99, with chemical formula Pb$_{10-x}$Cu$_x$(PO4)$_6$O, was recently reported to be a room-temperature superconductor. While this claim has met with little support in a flurry of ensuing work, a variety of calculations (mostly based on density-functional theory) have demonstrated that the system possesses some unusual characteristics in the electronic structure, in particular flat bands. We have established previously that within DFT, the system is insulating with many characteristics resembling the classic cuprates, provided the structure is not constrained to the $P$3(143) symmetry nominally assigned to it. Here we describe the basic electronic structure of LK-99 within self-consistent many-body perturbative approach, quasiparticle self-consistent GW (QSGW) approximation and their diagrammatic extensions. QSGW predicts that pristine LK-99 is indeed a Mott/charge transfer insulator, with a bandgap gap in excess of 3eV, whether or not constrained to the $P$3(143) symmetry. The highest valence bands occur as a pair, and look similar to DFT bands. The lowest conduction band is an almost dispersionless state of largely Cu $d$ character. When Pb$_9$Cu(PO$_4$)$_6$O} is hole-doped, the valence bands modify only slightly, and a hole pocket appears. However, two solutions emerge: a high-moment solution with the Cu local moment aligned parallel to neighbors, and a low-moment solution with Cu aligned antiparallel to its environment. In the electron-doped case the conduction band structure changes significantly: states of mostly Pb character merge with the formerly dispersionless Cu $d$ state, and high-spin and low spin solutions once again appear. Thus we conclude that with suitable doping, the ground state of the system is not adequately described by a band picture, and that strong correlations are likely. △ Less

Submitted 18 August, 2023; originally announced August 2023.

Comments: 6 pages, 4 figures

Pb-apatite framework as a generator of novel flat-band CuO based physics

Authors: Rafal Kurleto, Stephan Lany, Dimitar Pashov, Swagata Acharya, Mark van Schilfgaarde, Daniel S. Dessau

Abstract: Based on DFT calculations, we present the basic electronic structure of CuPb9(PO4)6O (Cu-doped lead apatite, LK-99), in two scenarios: (1) where the structure is constrained to the P3 symmetry and (2) where no symmetry is imposed. At the DFT level, the former is predicted to be metallic while the latter is found to be a charge-transfer insulator. In both cases the filling of these states is nomina… ▽ More Based on DFT calculations, we present the basic electronic structure of CuPb9(PO4)6O (Cu-doped lead apatite, LK-99), in two scenarios: (1) where the structure is constrained to the P3 symmetry and (2) where no symmetry is imposed. At the DFT level, the former is predicted to be metallic while the latter is found to be a charge-transfer insulator. In both cases the filling of these states is nominally d9, consistent with the Cu2+ valence state, and Cu with a local magnetic moment ~0.7mB. In the metallic case we find these states to be unusually flat (0.2 eV dispersion), giving high DOS at EF that we argue can be a host for novel electronic physics, including potentially high temperature superconductivity. The flatness of the bands is the likely origin of symmetry-lowering gapping possibilities that would remove the spectral weight from EF. Since some experimental observations show metallic/semiconducting behavior, we propose that disorder is responsible for closing the gap. We consider a variety of possibilities that could possibly close the gap, but limit consideration to kinds of disorder that preserve electron count. For all possibilities we considered (spin disorder, O on vacancy sites, Cu on different Pb sites), the local Cu moment, and consequently the gap remains robust. We conclude that disorder responsible for metallic behavior entails some kind of doping where the electron count changes. We claim that the emergence of the flat bands should be due to weak wave function overlap between the Cu and O orbitals, owing to the directional character of the constituent orbitals. So, finding an appropriate host structure for minimizing hybridization between Cu and O while allowing them to still weakly interact should be a promising route for generating flat bands at EF which can lead to interesting electronic phenomena, regardless of whether LK-99 is a room-temperature superconductor. △ Less

Submitted 20 August, 2023; v1 submitted 1 August, 2023; originally announced August 2023.

Comments: 11 pages, 6 figures

Investigating the Electronic Structure of Prospective Water-splitting Oxide BaCe$_{0.25}$Mn$_{0.75}$O$_{3-δ}$ Before and After Thermal Reduction

Authors: Subhayan Roychoudhury, Sarah Shulda, Anuj Goyal, Robert Bell, Sami Sainio, Nicholas Strange, James Eujin Park, Eric N. Coker, Stephan Lany, David Ginley, David Prendergast

Abstract: BaCe$_{0.25}$Mn$_{0.75}$O$_{3-δ}$ (BCM), a non-stoichiometric oxide closely resembling a perovskite crystal structure, has recently emerged as a prospective contender for application in renewable energy harvesting by solar thermochemical hydrogen generation. Using solar energy, oxygen-vacancies can be created in BCM and the reduced crystal so obtained can, in turn, produce H2 by stripping oxygen f… ▽ More BaCe$_{0.25}$Mn$_{0.75}$O$_{3-δ}$ (BCM), a non-stoichiometric oxide closely resembling a perovskite crystal structure, has recently emerged as a prospective contender for application in renewable energy harvesting by solar thermochemical hydrogen generation. Using solar energy, oxygen-vacancies can be created in BCM and the reduced crystal so obtained can, in turn, produce H2 by stripping oxygen from H2O. Therefore, a first step toward understanding the working mechanism and optimizing the performance of BCM, is a thorough and comparative analysis of the electronic structure of the pristine and the reduced material. In this paper, we probe the electronic structure of BCM using the combined effort of first-principles calculations and experimental O K-edge x-ray absorption spectroscopy (XAS). The computed projected density-of-states (PDOS) and orbital-plots are used to propose a simplified model for orbital-mixing between the oxygen and the ligand atoms. With the help of state-of-the-art simulations, we are able to find the origins of the XAS peaks and to categorize them on the basis of contribution from Ce and Mn. For the reduced crystal, the calculations show that, as a consequence of dielectric screening, the change in electron-density resulting from the reduction is strongly localized around the oxygen vacancy. Our experimental studies reveal a marked lowering of the first O K-edge peak in the reduced crystal which is shown to result from a diminished O-2p contribution to the frontier unoccupied orbitals, in accordance with the tight-binding scheme. Our study paves the way for investigation of the working-mechanism of BCM and for computational and experimental efforts aimed at design and discovery of efficient water-splitting oxides. △ Less

Submitted 27 September, 2022; originally announced September 2022.

Compositionally Complex Perovskite Oxides for Solar Thermochemical Water Splitting

Authors: Dawei Zhang, Hector A. De Santiago, Boyuan Xu, Cijie Liu, Jamie Trindell, Wei Li, Jiyun Park, Mark A. Rodriguez, Eric N. Coker, Josh Sugar, Anthony McDaniel, Stephan Lany, Liang Ma, Yi Wang, Gregory Collins, Hanchen Tian, Wenyuan Li, Yue Qi, Xingbo Liu, Jian Luo

Abstract: Solar thermochemical hydrogen generation (STCH) is a promising approach for eco-friendly H2 production, but conventional STCH redox compounds often suffer from thermodynamic and kinetic limitations with limited tunability. Expanding from the nascent high-entropy ceramics field, this study explores a new class of compositionally complex perovskite oxides (La0.8Sr0.2)(Mn(1-x)/3Fe(1-x)/3CoxAl(1-x)/3)… ▽ More Solar thermochemical hydrogen generation (STCH) is a promising approach for eco-friendly H2 production, but conventional STCH redox compounds often suffer from thermodynamic and kinetic limitations with limited tunability. Expanding from the nascent high-entropy ceramics field, this study explores a new class of compositionally complex perovskite oxides (La0.8Sr0.2)(Mn(1-x)/3Fe(1-x)/3CoxAl(1-x)/3)O3 for STCH. In situ X-ray diffraction demonstrates the phase stability during redox cycling and in situ X-ray photoelectron spectroscopy shows preferential redox of Co. The extent of reduction increases, but the intrinsic kinetics decreases, with increased Co content. Consequently, (La0.8Sr0.2)(Mn0.2Fe0.2Co0.4Al0.2)O3-δ achieves an optimal balance between the thermodynamics and kinetics properties. The combination of a moderate enthalpy of reduction, high entropy of reduction, and preferable surface oxygen exchange kinetics enables a maximum H2 yield of 395 +- 11 μmol g-1 in a short 1-hour redox duration. Entropy stabilization expectedly contributes to the structure stability during redox without phase transformation, which enables an exceptional STCH stability for >50 cycles under harsh interrupted conditions. The underlying redox mechanism is further elucidated by the density functional theory based parallel Monte Carlo computation, which represents a new computation paradigm first established here. This study suggests a new class of non-equimolar compositionally complex ceramics for STCH and chemical looping. △ Less

Submitted 21 September, 2022; originally announced September 2022.

Computational Discovery of Two-Dimensional Rare-Earth Iodides: Promising Ferrovalley Materials for Valleytronics

Authors: Abhishek Sharan, Stephan Lany, Nirpendra Singh

Abstract: Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter. Using Kinetically Limited Minimization (KLM), an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered 17 new Ferrovalley materials (rare-earth io… ▽ More Two-dimensional Ferrovalley materials with intrinsic valley polarization are rare but highly promising for valley-based nonvolatile random access memory and valley filter. Using Kinetically Limited Minimization (KLM), an unconstrained crystal structure prediction algorithm, and prototype sampling based on first-principles calculations, we have discovered 17 new Ferrovalley materials (rare-earth iodides RI$_2$, where R is a rare-earth element belonging to Sc, Y, or La-Lu, and I is Iodine). The rare-earth iodides are layered and demonstrate 2H, 1T, or 1T$_d$ phase as the ground-state in bulk, analogous to transition metal dichalcogenides (TMDCs). The calculated exfoliation energy of monolayers is comparable to that of graphene and TMDCs, suggesting possible experimental synthesis. The monolayers in the 2H phase exhibit two-dimensional ferromagnetism due to unpaired electrons in $d$ and $f$ orbitals. Throughout the rare-earth series, $d$ bands show valley polarization at $K$ and $\bar{K}$ points in the Brillouin zone near the Fermi level. Due to strong magnetic exchange interaction and spin-orbit coupling, large intrinsic valley polarization in the range of 15-143 meV without external stimuli is observed, which can be tuned and enhanced by applying a biaxial strain. These valleys can selectively be probed and manipulated for information storage and processing, potentially offering superior performance beyond conventional electronics and spintronics. We further show that the 2H ferromagnetic phase of RI$_2$ monolayers possesses non-zero Berry curvature and exhibits the valley Hall effect with considerable anomalous Hall conductivity. Our work will incite exploratory synthesis of the predicted Ferrovalley materials and their application in valleytronics and beyond. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Comments: 11 pages, 4 figures

Direct link between disorder, mobility and magnetoresistance in topological semimetals

Authors: Jocienne N. Nelson, Anthony D. Rice, Chase Brooks, Ian A. Leahy, Glenn Teeter, Mark Van Schilfgaarde, Stephan Lany, Brian Fluegel, Minhyea Lee, Kirstin Alberi

Abstract: The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the r… ▽ More The extent to which disorder influences the properties of topological semimetals remains an open question and is relevant to both the understanding of topological states and the use of topological materials in practical applications. Here, we achieve unmatched and systematic control of point defect concentrations in the prototypical Dirac semimetal Cd$_3$As$_2$ to gain important insight into the role of disorder on electron transport behavior. We find that arsenic vacancies introduce localized states near the Fermi level and strongly influence the electron mobility. Reducing arsenic vacancies by changing the As/Cd flux ratio used during deposition results in an increase in the magnetoresistance from 200%-1000% and an increase in mobility from 5000-18,000 cm$^2$/Vs. However, the degree of linear magnetoresistance, which has previously been linked to disorder, is found here to correlate inversely with measures of disorder, including disorder potential and disorder correlation lengths. This finding yields important new information in the quest to identify the origin of linear magnetoresistance in a wider range of materials. △ Less

Submitted 20 June, 2022; originally announced June 2022.

Comments: 19 pages, 3 main figures, 4 supplemental figures

Journal ref: Phys. Rev. B 107, L220206 2023

Combinatorial synthesis of cation-disordered manganese tin nitride MnSnN$_2$ thin films with magnetic and semiconducting properties

Authors: Christopher L. Rom, Rebecca W. Smaha, Celeste L. Melamed, Rekha R. Schnepf, Karen N. Heinselman, John S. Mangum, Sang-Jun Lee, Stephan Lany, Laura T. Schelhas, Ann L. Greenaway, James R. Neilson, Sage R. Bauers, Jennifer S. Andrew, Adele C. Tamboli

Abstract: Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show… ▽ More Magnetic semiconductors may soon improve the energy efficiency of computers, but materials exhibiting these dual properties remain underexplored. Here, we report the computational prediction and realization of a new magnetic and semiconducting material, MnSnN$_2$, via combinatorial sputtering of thin films. Grazing incidence wide angle X-ray scattering and laboratory X-ray diffraction studies show a wide composition tolerance for this wurtzite-like MnSnN$_2$, ranging from $20\% <$ Mn/(Mn+Sn) $< 65$\% with cation disorder across this composition space. Magnetic susceptibility measurements reveal a low-temperature transition ($T^{\mathrm{*}} \approx 10$ K) for MnSnN$_2$ and strong antiferromagnetic correlations, although the ordering below this transition may be complex. This finding contrasts with bulk MnSiN$_2$ and MnGeN$_2$, which exhibited antiferromagnetic ordering above 400 K in previous studies. Spectroscopic ellipsometry identifies an optical absorption onset of 1 eV for the experimentally-synthesized phase exhibiting cation disorder, consistent with the computationally-predicted 1.2 eV bandgap for the cation-ordered structure. Electronic conductivity measurements confirm the semiconducting nature of this new phase by showing increasing conductivity with increasing temperature. This work adds to the set of known semiconductors that are paramagnetic at room temperature and will help guide future work targeted at controlling the structure and properties of semiconducting materials that exhibit magnetic behavior. △ Less

Submitted 14 June, 2022; v1 submitted 7 June, 2022; originally announced June 2022.

Journal ref: Chemistry of Materials 2023, 35, 7, 2936-2946

Band gap analysis and carrier localization in cation-disordered ZnGeN$_2$

Authors: Jacob J. Cordell, Garritt J. Tucker, Adele C. Tamboli, Stephan Lany

Abstract: Cation site disorder provides a degree of freedom in the growth of ternary nitrides for tuning the technologically relevant properties of a material system. For example, the band gap of ZnGeN$_2$ changes when the ordering of the structure deviates from that of its ground state. By combining the perspectives of carrier localization and defect states, we analyze the impact of different degrees of di… ▽ More Cation site disorder provides a degree of freedom in the growth of ternary nitrides for tuning the technologically relevant properties of a material system. For example, the band gap of ZnGeN$_2$ changes when the ordering of the structure deviates from that of its ground state. By combining the perspectives of carrier localization and defect states, we analyze the impact of different degrees of disordering on electronic properties in ZnGeN$_2$, addressing a gap in current studies which focus on dilute or fully disordered systems. The present study demonstrates changes in the density of states and localization of carriers in ZnGeN$_2$ calculated using band gap-corrected density functional theory and hybrid calculations on partially disordered supercells generated using the Monte Carlo method. We use localization and density of states to discuss the ill-defined nature of a band gap in a disordered material, comparing multiple definitions of the energy gap in the context of theory and experiment. Decreasing the order parameter results in a large reduction of the band gap in disordered cases. The reduction in band gap is due in part to isolated, localized states that form above the valence band continuum and are associated with nitrogen coordinated by more zinc than germanium. The prevalence of defect states in all but the perfectly ordered structure creates challenges for incorporating disordered ZnGeN$_2$ into optical devices, but the localization associated with these defects provides insight into mechanisms of electron/hole recombination in the material. △ Less

Submitted 18 January, 2022; v1 submitted 10 September, 2021; originally announced September 2021.

Journal ref: APL Materials 10, 011112 (2022)

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Authors: Anuj Goyal, Andriy Zakutayev, Vladan Stevanović, Stephan Lany

Abstract: Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportu… ▽ More Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga2O3 based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench synthesis protocol for hydrogen assisted Mg doping in beta-Ga2O3, taking into account the gas phase equilibrium between H2, O2 and H2O, which determines the H chemical potential. We predict Ga2O3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to the Mg acceptor activation by H removal in GaN. For equilibrium annealing there is an optimal temperature that maximizes the Ga2O3 net acceptor density for a given Mg doping level, which is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga2O3 Fermi level drops below mid-gap down to about +1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral MgGa0 acceptors. The Fermi level reduction down to +1.5 eV and suppression of free electron density in this doping type converted (NA > ND) Ga2O3 material is of significance and impact for the design of Ga2O3 power electronics devices. △ Less

Submitted 30 March, 2021; originally announced March 2021.

The role of disorder in the synthesis of metastable zinc zirconium nitrides

Authors: Rachel Woods-Robinson, Vladan Stevanović, Stephan Lany, Karen N. Heinselman, Matthew K. Horton, Kristin A. Persson, Andriy Zakutayev

Abstract: In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride materials, with many possible metastable polymorphs, provide a rich materials space to study what influences thermodynamic stability and polymorph synthesizability. For example, ZnZrN2 is theoretically predicted at zero Kelv… ▽ More In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride materials, with many possible metastable polymorphs, provide a rich materials space to study what influences thermodynamic stability and polymorph synthesizability. For example, ZnZrN2 is theoretically predicted at zero Kelvin to have an unusual layered "wurtsalt" ground state crystal structure with compelling optoelectronic properties, but it is unknown whether this structure can be realized experimentally under practical synthesis conditions. Here, we use combinatorial sputtering to synthesize hundreds of ZnxZr1-xNy thin film samples, and find metastable rocksalt-derived or boron-nitride-derived structures rather than the predicted wurtsalt structure. Using a statistical polymorph sampler approach, it is demonstrated that although rocksalt is the least stable polymorph at zero Kelvin, it becomes the most stable polymorph at high effective temperatures similar to those achieved using this sputter deposition method, and thus corroborates experimental results. Additional calculations show that this destabilization of the wurtsalt polymorph is due to configurational entropic and enthalpic effects, and that vibrational contributions are negligible. Specifically, rocksalt- and boron-nitride-derived structures become the most stable polymorphs in the presence of disorder because of higher tolerances to cation cross-substitution and off-stoichiometry than the wurtsalt structure. This understanding of the role of disorder tolerance in the synthesis of competing polymorphs can enable more accurate predictions of synthesizable crystal structures and their achievable material properties. △ Less

Submitted 11 March, 2022; v1 submitted 22 December, 2020; originally announced December 2020.

Thin film synthesis of semiconductors in the Mg-Sb-N materials system

Authors: Karen N. Heinselman, Stephan Lany, John D. Perkins, Kevin R. Talley, Andriy Zakutayev

Abstract: Nitrides feature many interesting properties, such as a wide range of bandgaps suitable for optoelectronic devices including light-emitting diodes (LEDs), and piezoelectric response used in microelectromechanical systems (MEMS). Nitrides are also significantly underexplored compared to oxides and other chemistries, with many being thermochemically metastable, sparking interest from a basic science… ▽ More Nitrides feature many interesting properties, such as a wide range of bandgaps suitable for optoelectronic devices including light-emitting diodes (LEDs), and piezoelectric response used in microelectromechanical systems (MEMS). Nitrides are also significantly underexplored compared to oxides and other chemistries, with many being thermochemically metastable, sparking interest from a basic science point of view. This paper reports on experimental and computational exploration of the Mg-Sb-N material system, featuring both metastable materials and interesting semiconducting properties. Using sputter deposition, we discovered a new Mg2SbN3 nitride with a wurtzite-derived crystal structure and synthesized the antimonide-nitride Mg3SbN with an antiperovskite crystal structure for the first time in thin film form. Theoretical calculations indicate that Mg2SbN3 is metastable and has properties relevant to LEDs and MEMS, whereas Mg3SbN has a large dielectric constant (28ε_0) and low hole effective masses (0.9m_0), of interest for photovoltaic solar cell absorbers. The experimental solar-matched 1.3 eV optical absorption onset of the Mg3SbN antiperovskite agrees with the theoretical prediction (1.3 eV direct, 1.1 eV indirect), and with the measurements of room-temperature near-bandgap photoluminescence. These results make an important contribution towards understanding semiconductor properties and chemical trends in the Mg-Sb-N materials system, paving the way to future practical applications of these novel materials. △ Less

Submitted 28 May, 2019; v1 submitted 24 May, 2019; originally announced May 2019.

Comments: 25 page paper (double spaced) with 8 figures, 33 pages with SI

The role of decomposition reactions in assessing first-principles predictions of solid stability

Authors: Christopher J. Bartel, Alan W. Weimer, Stephan Lany, Charles B. Musgrave, Aaron M. Holder

Abstract: The performance of density functional theory (DFT) approximations for predicting materials thermodynamics is typically assessed by comparing calculated and experimentally determined enthalpies of formation from elemental phases, ΔHf. However, a compound competes thermodynamically with both other compounds and their constituent elemental forms, and thus, the enthalpies of the decomposition reaction… ▽ More The performance of density functional theory (DFT) approximations for predicting materials thermodynamics is typically assessed by comparing calculated and experimentally determined enthalpies of formation from elemental phases, ΔHf. However, a compound competes thermodynamically with both other compounds and their constituent elemental forms, and thus, the enthalpies of the decomposition reactions to these competing phases, ΔHd, determines thermodynamic stability. We evaluated the phase diagrams for 56,791 compounds to classify decomposition reactions into three types: 1. those that produce elemental phases, 2. those that produce compounds, and 3. those that produce both. This analysis shows that the decomposition into elemental forms is rarely the competing reaction that determines compound stability and that approximately two-thirds of decomposition reactions involve no elemental phases. Using experimentally reported formation enthalpies for 1,012 solid compounds, we assess the accuracy of the generalized gradient approximation (GGA) (PBE) and meta-GGA (SCAN) density functionals for predicting compound stability. For 646 decomposition reactions that are not trivially the formation reaction, PBE (MAD = 70 meV/atom) and SCAN (MAD = 59 meV/atom) perform similarly, and commonly employed correction schemes using fitted elemental reference energies make only a negligible improvement (~2 meV/atom). Furthermore, for 231 reactions involving only compounds (Type 2), the agreement between SCAN, PBE, and experiment is within ~35 meV/atom and is thus comparable to the magnitude of experimental uncertainty. △ Less

Submitted 7 January, 2019; v1 submitted 18 October, 2018; originally announced October 2018.

Journal ref: npj Computational Materials 5, 4 (2019)

Ternary Nitride Semiconductors in the Rocksalt Crystal Structure

Authors: Sage R. Bauers, Aaron Holder, Wenhao Sun, Celeste L. Melamed, Rachel Woods-Robinson, John Mangum, John Perkins, William Tumas, Brian Gorman, Adele Tamboli, Gerbrand Ceder, Stephan Lany, Andriy Zakutayev

Abstract: Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we report on ternary nitride semiconductors with rocksalt crystal structures, remarkable optoelectronic properties, and the general chemical formula Mg$_{x}$TM… ▽ More Inorganic nitrides with wurtzite crystal structures are well-known semiconductors used in optoelectronic devices. In contrast, rocksalt-based nitrides are known for their metallic and refractory properties. Breaking this dichotomy, here we report on ternary nitride semiconductors with rocksalt crystal structures, remarkable optoelectronic properties, and the general chemical formula Mg$_{x}$TM$_{1-x}$N (TM=Ti, Zr, Hf, Nb). These compounds form over a broad metal composition range and our experiments show that Mg-rich compositions are nondegenerate semiconductors with visible-range optical absorption onsets (1.8-2.1 eV). Lattice parameters are compatible with growth on a variety of substrates, and epitaxially grown MgZrN$_{2}$ exhibits remarkable electron mobilities approaching 100 cm$^{2}$V$^{-1}$s$^{-1}$. Ab initio calculations reveal that these compounds have disorder-tunable optical properties, large dielectric constants and low carrier effective masses that are insensitive to disorder. Overall, these experimental and theoretical results highlight Mg$_{G-3}$TMN$_{G-2}$ rocksalts as a new class of semiconductor materials with promising properties for optoelectronic applications. △ Less

Submitted 12 October, 2018; originally announced October 2018.

Electron doping of proposed quantum spin liquid kagomé Zn-Cu hydroxyl-halides produces localized states in the band gap

Authors: Qihang Liu, Qiushi Yao, Z. A. Kelly, C. M. Pasco, T. M. McQueen, S. Lany, Alex Zunger

Abstract: Carrier doping of quantum spin liquids is a long-proposed route to the emergence of high-temperature superconductivity. Electrochemical intercalation in kagome hydroxyl-halide materials shows that samples remain insulating across a wide range of electron counts. Here we demonstrate through first-principles density functional calculations corrected for self-interaction the mechanism by which electr… ▽ More Carrier doping of quantum spin liquids is a long-proposed route to the emergence of high-temperature superconductivity. Electrochemical intercalation in kagome hydroxyl-halide materials shows that samples remain insulating across a wide range of electron counts. Here we demonstrate through first-principles density functional calculations corrected for self-interaction the mechanism by which electrons remain localized in various Zn-Cu hydroxyl-halides, independently of the chemical identity of the dopant - the formation of polaronic states with attendant lattice displacements and a dramatic narrowing of bandwidth upon electron addition. The same theoretical method applied to electron doping in cuprate Nd2CuO4 correctly produces a metallic state when the initially formed polaron dissolves into an extended state. Our general findings explain the insulating behavior in a wide range of doped quantum magnets and demonstrate that new quantum spin liquid host materials are needed to realize metallicity borne of a spin liquid. △ Less

Submitted 1 October, 2018; originally announced October 2018.

Comments: 17 pages, 4 figures; Phys. Rev. Lett. in press

Journal ref: Phys. Rev. Lett. 121, 186402 (2018)

A Map of the Inorganic Ternary Metal Nitrides

Authors: Wenhao Sun, Christopher Bartel, Elisabetta Arca, Sage Bauers, Bethany Matthews, Bernardo Orvañanos, Bor-Rong Chen, Michael F. Toney, Laura T. Schelhas, William Tumas, Janet Tate, Andriy Zakutayev, Stephan Lany, Aaron Holder, Gerbrand Ceder

Abstract: Exploratory synthesis in novel chemical spaces is the essence of solid-state chemistry. However, uncharted chemical spaces can be difficult to navigate, especially when materials synthesis is challenging. Nitrides represent one such space, where stringent synthesis constraints have limited the exploration of this important class of functional materials. Here, we employ a suite of computational mat… ▽ More Exploratory synthesis in novel chemical spaces is the essence of solid-state chemistry. However, uncharted chemical spaces can be difficult to navigate, especially when materials synthesis is challenging. Nitrides represent one such space, where stringent synthesis constraints have limited the exploration of this important class of functional materials. Here, we employ a suite of computational materials discovery and informatics tools to construct a large stability map of the inorganic ternary metal nitrides. Our map clusters the ternary nitrides into chemical families with distinct stability and metastability, and highlights hundreds of promising new ternary nitride spaces for experimental investigation--from which we experimentally realized 7 new Zn- and Mg-based ternary nitrides. By extracting the mixed metallicity, ionicity, and covalency of solid-state bonding from the DFT-computed electron density, we reveal the complex interplay between chemistry, composition, and electronic structure in governing large-scale stability trends in ternary nitride materials. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Physical descriptor for the Gibbs energy of inorganic crystalline solids and temperature-dependent materials chemistry

Authors: Christopher J. Bartel, Samantha L. Millican, Ann M. Deml, John R. Rumptz, William Tumas, Alan W. Weimer, Stephan Lany, Vladan Stevanović, Charles B. Musgrave, Aaron M. Holder

Abstract: The Gibbs energy, G, determines the equilibrium conditions of chemical reactions and materials stability. Despite this fundamental and ubiquitous role, G has been tabulated for only a small fraction of known inorganic compounds, impeding a comprehensive perspective on the effects of temperature and composition on materials stability and synthesizability. Here, we use the SISSO (sure independence s… ▽ More The Gibbs energy, G, determines the equilibrium conditions of chemical reactions and materials stability. Despite this fundamental and ubiquitous role, G has been tabulated for only a small fraction of known inorganic compounds, impeding a comprehensive perspective on the effects of temperature and composition on materials stability and synthesizability. Here, we use the SISSO (sure independence screening and sparsifying operator) approach to identify a simple and accurate descriptor to predict G for stoichiometric inorganic compounds with ~50 meV/atom (~1 kcal/mol) resolution, and with minimal computational cost, for temperatures ranging from 300-1800 K. We then apply this descriptor to ~30,000 known materials curated from the Inorganic Crystal Structure Database (ICSD). Using the resulting predicted thermochemical data, we generate thousands of temperature-dependent phase diagrams to provide insights into the effects of temperature and composition on materials synthesizability and stability and to establish the temperature-dependent scale of metastability for inorganic compounds. △ Less

Submitted 6 January, 2019; v1 submitted 21 May, 2018; originally announced May 2018.

Journal ref: Nature Communications 9, 4168 (2018)

A Computational Framework for Automation of Point Defect Calculations

Authors: Anuj Goyal, Prashun Gorai, Haowei Peng, Stephan Lany, Vladan Stevanovic

Abstract: A complete and rigorously validated open-source Python framework to automate point defect calculations using density functional theory has been developed. The framework provides an effective and efficient method for defect structure generation, and creation of simple yet customizable workflows to analyze defect calculations. The package provides the capability to compute widely-accepted correction… ▽ More A complete and rigorously validated open-source Python framework to automate point defect calculations using density functional theory has been developed. The framework provides an effective and efficient method for defect structure generation, and creation of simple yet customizable workflows to analyze defect calculations. The package provides the capability to compute widely-accepted correction schemes to overcome finite-size effects, including (1) potential alignment, (2) image-charge correction, and (3) band filling correction to shallow defects. Using Si, ZnO and In$_2$O$_3$ as test examples, we demonstrate the package capabilities and validate the methodology. △ Less

Submitted 2 November, 2016; originally announced November 2016.

Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures

Authors: Christopher M. Caskey, Aaron Holder, Sarah Shulda, Steve Christensen, David Diercks, Craig P. Schwartz, David Biagioni, Dennis Nordlund, Alon Kukliansky, Amir Natan, David Prendergast, Bernardo Orvananos, Wenhao Sun, Xiuwen Zhang, Gerbrand Ceder, William Tumas, David S. Ginley, John D. Perkins, Vladan Stevanovic, Svitlana Pylypenko, Stephan Lany, Ryan M. Richards, Andriy Zakutayev

Abstract: Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research ch… ▽ More Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials. △ Less

Submitted 18 January, 2016; originally announced January 2016.

Understanding and Control of Bipolar Doping in Copper Nitride

Authors: Angela N Fioretti, Craig P Schwartz, John Vinson, Dennis Nordlund, David Prendergast, Adele C Tamboli, Christopher M Caskey, Filip Tuomisto, Florence Linez, Steven T Christensen, Eric S Toberer, Stephan Lany, Andriy Zakutayev

Abstract: Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the l… ▽ More Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 10^17 electrons/cm^3 for low growth temperature (~35 degrees C) and p-type with 10^15-10^16 holes/cm^3 for elevated growth temperatures (50-120 degrees C). Mobility for both types of Cu3N was ~0.1-1 cm^2/Vs. Additionally, temperature- dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that V_Cu defects form preferentially in p-type Cu3N while Cu_i defects form preferentially in n-type Cu3N. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N, that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials, and provide a framework that can be applied when considering the properties of such materials in general. △ Less

Submitted 13 January, 2016; originally announced January 2016.

Comments: 12 pages, 8 figures, accepted manuscript

CuSbSe2 photovoltaic devices with 3% efficiency

Authors: Adam Welch, Lauryn Baranowski, Pawel Zawadzki, Stephan Lany, Colin Wolden, Andriy Zakutayev

Abstract: Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 μm thick CuSbSe$_2$ PV prototypes prepared at 380-410°C by a self-regulat… ▽ More Recent technical and commercial successes of existing thin film solar cell technologies motivates exploration of next-generation photovoltaic (PV) absorber materials. Of particular scientific interest are compounds like CuSbSe$_2$, which do not have the conventional tetrahedral semiconductor bonding. Here, we demonstrate 1.5 μm thick CuSbSe$_2$ PV prototypes prepared at 380-410°C by a self-regulated sputtering process using the conventional substrate device architecture. The p-type CuSbSe$_2$ absorber has a 1.1 eV optical absorption onset, ~$10^{5}$ cm$^{-1}$ absorption coefficient at 0.3 eV above the onset, and a hole concentration of ~10$^{17}$ cm$^{-3}$. The promising >3% energy conversion efficiency (Jsc = 20 mA/cm$^2$, FF = 0.44, Voc = 0.35 V) in these initial devices is limited by bulk recombination that limits photocurrent, device engineering issues that affect fill factor, and a photovoltage deficit that likely results from the non-ideal CuSbSe2/CdS band offset. △ Less

Submitted 9 May, 2015; originally announced May 2015.

Comments: 12 pages, 4 figures, supplementary section

Accelerated development of CuSbS2 thin film photovoltaic device prototypes

Authors: Adam W. Welch, Lauryn L. Baranowski, Pawel Zawadzki, Clay DeHart, Steve Johnston, Stephan Lany, Colin A. Wolden, Andriy Zakutayev

Abstract: Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative absorbers and corresponding contacts, the rate of progress is limited by complications that arise during solar cell fabrication. One potential solution to this probl… ▽ More Development of alternative thin film photovoltaic technologies is an important research topic due to the potential for low-cost, large-scale fabrication of high-efficiency solar cells. Despite the large number of promising alternative absorbers and corresponding contacts, the rate of progress is limited by complications that arise during solar cell fabrication. One potential solution to this problem is the high-throughput combinatorial method, which has been extensively used for research and development of individual absorber and contact materials. Here, we demonstrate an accelerated approach to development of thin film photovoltaic device prototypes based on the novel CuSbS2 absorber, using the device architecture employed for CuInxGa(1-x)Se2 (CIGS). The newly developed three-stage, self-regulated CuSbS2 growth process enables the study of PV device performance trends as a function of phase purity, crystallographic orientation, layer thickness of the absorber, and numerous back contacts. This exploration results in initial CuSbS2 device prototypes with ~1% conversion efficiency; currently limited by low short-circuit current due to poor collection of photoexcited electrons, and a small open-circuit voltage due to a cliff-type conduction band offset at the CuSbS2/CdS interface (suggested by first-principles calculations). Overall, these results illustrate the potential of combinatorial methods to accelerate the development of thin film photovoltaic devices with novel absorbers. △ Less

Submitted 7 April, 2015; v1 submitted 6 April, 2015; originally announced April 2015.

Comments: 29 pages, 8 figures, 2 supplementary figures

Effects of disorder on carrier transport in Cu$_2$SnS$_3$

Authors: Lauryn L. Baranowski, Kevin McLaughlin, Pawel Zawadzki, Stephan Lany, Andrew Norman, Hannes Hempel, Rainer Eichberger, Thomas Unold, Eric S. Toberer, Andriy Zakutayev

Abstract: In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques… ▽ More In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has attracted significant interest in recent years. However, similar to CZTS, Cu$_2$SnS$_3$ displays cation disorder. In this work, we develop synthetic techniques to control the disorder in Cu$_2$SnS$_3$ thin films. By manipulating the disorder in this material, we observe crystal structure changes and detect improvements in the majority carrier (hole) transport. However, when the minority carrier (electron) transport was investigated using optical pump terahertz probe spectroscopy, minimal differences were observed between the ordered and disordered Cu$_2$SnS$_3$. By combining these results with first-principles and Monte Carlo theoretical calculations, we are able to conclude that even ostensibly "ordered" Cu$_2$SnS$_3$ displays minority carrier transport properties corresponding to the disordered structure. The presence of extended planar defects in all samples, observed in TEM imaging, suggests that disorder is present even when it is not detectable using traditional structural characterization methods. The results of this study highlight some of the challenges to the further improvement of Cu$_2$SnS$_3$-based photovoltaics, and have implications for other disordered multinary semiconductors such as CZTS. △ Less

Submitted 6 April, 2015; originally announced April 2015.

Pathway to oxide photovoltaics via band-structure engineering of SnO

Authors: Haowei Peng, Andre Bikowski, Andriy Zakutayev, Stephan Lany

Abstract: The prospects of scaling current photovoltaic technologies to terawatt levels remain uncertain. All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. A potential candidate material is tin monoxide (SnO), which has exceptional doping and transport properties among oxides, but suffers from a l… ▽ More The prospects of scaling current photovoltaic technologies to terawatt levels remain uncertain. All-oxide photovoltaics could open rapidly scalable manufacturing routes, if only oxide materials with suitable electronic and optical properties were developed. A potential candidate material is tin monoxide (SnO), which has exceptional doping and transport properties among oxides, but suffers from a low adsorption coefficient due to its strongly indirect band gap. Here, we address this shortcoming of SnO by band-structure engineering through isovalent but heterostructural alloying with divalent cations (Mg, Ca, Sr, Zn). Using first-principles calculations, we show that suitable band gaps and optical properties close to that of direct-gap semiconductors are achievable in such SnO based alloys. Due to the defect tolerant electronic structure of SnO, the dispersive band-structure features and comparatively small effective masses are preserved in the alloys. Initial Sn1-xZnxO thin films deposited by sputtering exhibit crystal structure and optical properties in accord with the theoretical predictions, which confirms the feasibility of the alloying approach. Thus, the implications of this work are important not only for terawatt scale photovoltaics, but also for other large-scale energy technologies where defect-tolerant semiconductors with high quality electronic properties are required. △ Less

Submitted 31 March, 2016; v1 submitted 5 April, 2015; originally announced April 2015.

Electronic band structure and ambipolar electrical properties of Cu2O based semiconductor alloys

Authors: Vladan Stevanovic, Andriy Zakutayev, Stephan Lany

Abstract: Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional materials is conceivable when considering more complex alloys by mixing aliovalent and heterostructural constituents. The real challenge lies in the quantitativ… ▽ More Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional materials is conceivable when considering more complex alloys by mixing aliovalent and heterostructural constituents. The real challenge lies in the quantitative property prediction for such complex alloys to guide their experimental exploration. We developed an approach to predict compositional dependence of both band-structure and electrical properties from ab-initio calculations by extending conventional dilute defect model to higher (alloy) concentrations. Considering alloying of aliovalent (Mg, Zn, Cd) cations and isovalent anions (S, Se) into Cu2O, we predict tunability of band-gap energies and doping levels over a wide range, including the type conversion from p- to n-type. Initial synthesis and characterization of Zn and Se substituted Cu2O support the defect model, suggesting these alloys as promising novel oxide semiconductor materials. △ Less

Submitted 1 July, 2014; originally announced July 2014.

Comments: 11 pages, 6 figures

Manybody GW calculation of the oxygen vacancy in ZnO

Authors: Stephan Lany, Alex Zunger

Abstract: Density functional theory (DFT) calculations of defect levels in semiconductors based on approximate functionals are subject to considerable uncertainties, in particular due to inaccurate band gap energies. Testing previous correction methods by many-body GW calculations for the O vacancy in ZnO, we find that: (i) The GW quasi-particle shifts of the VO defect states increase the spitting between… ▽ More Density functional theory (DFT) calculations of defect levels in semiconductors based on approximate functionals are subject to considerable uncertainties, in particular due to inaccurate band gap energies. Testing previous correction methods by many-body GW calculations for the O vacancy in ZnO, we find that: (i) The GW quasi-particle shifts of the VO defect states increase the spitting between occupied and unoccupied states due to self-interaction correction, and do not reflect the conduction versus valence band character. (ii) The GW quasi-particle energies of charged defect states require important corrections for supercell finite size effects. (iii) The GW results are robust with respect to the choice of the underlying DFT or hybrid-DFT functional, and the (2+/0) donor transition lies below mid-gap, close to our previous prediction employing rigid band edge shifts. △ Less

Submitted 17 February, 2010; v1 submitted 15 October, 2009; originally announced October 2009.

Comments: revision date 02/08/2010

Polaronic hole localization and multiple hole binding of acceptors in oxide wide-gap semiconductors

Authors: Stephan Lany, Alex Zunger

Abstract: Acceptor-bound holes in oxides often localize asymmetrically at one out of several equivalent oxygen ligands. Whereas Hartree-Fock (HF) theory overly favors such symmetry-broken polaronic hole-localization in oxides, standard local density (LD) calculations suffer from spurious delocalization among several oxygen sites. These opposite biases originate from the opposite curvatures of the energy a… ▽ More Acceptor-bound holes in oxides often localize asymmetrically at one out of several equivalent oxygen ligands. Whereas Hartree-Fock (HF) theory overly favors such symmetry-broken polaronic hole-localization in oxides, standard local density (LD) calculations suffer from spurious delocalization among several oxygen sites. These opposite biases originate from the opposite curvatures of the energy as a function of the fractional occupation number n, i.e., d2E/dn2 < 0 in HF and d2E/dn2 > 0 in LD. We recover the correct linear behavior, d2E/dn2 = 0, that removes the (de)localization bias by formulating a generalized Koopmans condition. The correct description of oxygen hole-localization reveals that the cation-site nominal single-acceptors in ZnO, In2O3, and SnO2 can bind multiple holes. △ Less

Submitted 30 April, 2009; originally announced May 2009.

Journal ref: Phys. Rev. B 80, 085202 (2009).

Light-induced metastability in Cu(In,Ga)Se2 caused by VSe-VCu complexes

Authors: S. Lany, A. Zunger

Abstract: Using first-principles total-energy calculations we identify the microscopic origin and the physical mechanism that leads to light-induced metastability and persistent photoconductivity in the photovoltaic material Cu(In,Ga)Se2. In the presence of photoexcited or electrically injected conduction band electrons, the complex (VSe-VCu) of a Se vacancy with a Cu vacancy is predicted to transform fro… ▽ More Using first-principles total-energy calculations we identify the microscopic origin and the physical mechanism that leads to light-induced metastability and persistent photoconductivity in the photovoltaic material Cu(In,Ga)Se2. In the presence of photoexcited or electrically injected conduction band electrons, the complex (VSe-VCu) of a Se vacancy with a Cu vacancy is predicted to transform from a shallow electron trap into a deep hole trap upon the persistent capture of two electrons. This explains the experimental evidence that for every two holes persistently released to the valence band, one hole trap is generated. △ Less

Submitted 16 March, 2005; originally announced March 2005.

Comments: submitted to Appl. Phys. Lett

Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors

Authors: S. Lany, A. Zunger

Abstract: Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict persistent electron photoconductivity (n-type PPC) caused by the oxygen vacancy VO in n-ZnO, and persistent hole photoconductivity (p-type PPC) caused by the Se v… ▽ More Using first-principles electronic structure calculations we identify the anion vacancies in II-VI and chalcopyrite Cu-III-VI2 semiconductors as a class of intrinsic defects that can exhibit metastable behavior. Specifically, we predict persistent electron photoconductivity (n-type PPC) caused by the oxygen vacancy VO in n-ZnO, and persistent hole photoconductivity (p-type PPC) caused by the Se vacancy VSe in p-CuInSe2 and p-CuGaSe2. We find that VSe in the chalcopyrite materials is amphoteric having two "negative-U" like transitions, i.e. a double-donor transition e(2+/0) close to the valence band and a double-acceptor transition e(0/2-) closer to the conduction band. We introduce a classification scheme that distinguishes two types of defects (e.g., donors): type-alpha, which have a defect-localized-state (DLS) in the gap, and type-beta, which have a resonant DLS within the host bands (e.g., conduction band). In the latter case, the introduced carriers (e.g., electrons) relax to the band edge where they can occupy a perturbed-host-state (PHS). Type alpha is non-conducting, whereas type beta is conducting. We identify the neutral anion vacancy as type-alpha and the doubly positively charged vacancy as type-beta. We suggest that illumination changes the charge state of the anion vacancy and leads to a crossover between alpha- and beta-type behavior, resulting in metastability and PPC. In CuInSe2, the metastable behavior of VSe is carried over to the (VSe-VCu) complex, which we identify as the physical origin of PPC observed experimentally. We explain previous puzzling experimental results in ZnO and CuInSe2 in the light of this model. △ Less

Submitted 1 March, 2005; originally announced March 2005.

Comments: submitted to Phys. Rev. B