Showing 1–35 of 35 results for author: Stevanovic, V

Synthesis pathways to thin films of stable layered nitrides

Authors: Andriy Zakutayev, Matthew Jankousky, Laszlo Wolf, Yi Feng, Christopher L. Rom, Sage R. Bauers, Olaf Borkiewicz, David A. LaVan, Rebecca W. Smaha, Vladan Stevanovic

Abstract: One of the grand challenges of materials chemistry is the selective synthesis of metastable materials away from equilibrium. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but they often struggle to yield the thermodynamic ground state. How can thermodynamically-stable structures for practical applications be grown using kinetical… ▽ More One of the grand challenges of materials chemistry is the selective synthesis of metastable materials away from equilibrium. Thin film deposition methods with rapid condensation of vapor precursors can readily synthesize metastable phases, but they often struggle to yield the thermodynamic ground state. How can thermodynamically-stable structures for practical applications be grown using kinetically-limited synthesis methods? Here, we reveal a synthesis pathway to thermodynamically-stable ordered layered ternary nitride materials, and we explain why disordered metastable intermediate phases tend to form in the first place. We show that starting from atomically dispersed vapor precursors leads to a 3D long-range disordered MgMoN2 thin film polymorph product, with a layered short-range order that has a low-energy transformation barrier to the layered 2D-like stable structure. We extend this synthesis approach to ScTaN2, MgWN2 and MgTa2N3, opening a door to synthesis of other layered nitride thin films with unique semiconducting and quantum properties. △ Less

Submitted 25 June, 2024; originally announced June 2024.

A Python code for calculating the mean-value (Baldereschi's) point for any crystal structure

Authors: Vladan Stevanovic

Abstract: A python code (mvp.py) is presented for computing the mean-value point (MVP) in the Brillouin zone first introduced by Baldereschi [1]. The code allows calculations of the MVP for any input crystal structure. Having MVP allows approximating the Brillouin zone integrals of relatively smooth, periodic functions defined in the reciprocal space by the value of the same function at only one, mean-value… ▽ More A python code (mvp.py) is presented for computing the mean-value point (MVP) in the Brillouin zone first introduced by Baldereschi [1]. The code allows calculations of the MVP for any input crystal structure. Having MVP allows approximating the Brillouin zone integrals of relatively smooth, periodic functions defined in the reciprocal space by the value of the same function at only one, mean-value, k-point. This approximation decreases computational cost at a relatively small decrease in accuracy. The MVP coordinates for the 14 Bravais lattices are evaluated and the underlying theory is discussed. △ Less

Submitted 1 May, 2024; originally announced May 2024.

All "roads" lead to rocksalt structure

Authors: Matthew Jankousky, Helen Chen, Andrew Novick, Vladan Stevanović

Abstract: Rocksalt is the most common crystal structure among binary compounds. Moreover, no long-lived, metastable polymorphs are observed in compounds with the rocksalt ground state. We investigate the absence of polymorphism and the dominance of the rocksalt structure via first-principles random structure sampling and transformation kinetics modeling of three rocksalt compounds: MgO, TaC, and PbTe. Rando… ▽ More Rocksalt is the most common crystal structure among binary compounds. Moreover, no long-lived, metastable polymorphs are observed in compounds with the rocksalt ground state. We investigate the absence of polymorphism and the dominance of the rocksalt structure via first-principles random structure sampling and transformation kinetics modeling of three rocksalt compounds: MgO, TaC, and PbTe. Random structure sampling reveals that for all three systems the rocksalt local minimum on the potential energy surface is far larger than any other, making it statistically the most significant structure. The kinetics modeling shows that virtually all other relevant structures, including most of the 457 known A$_1$B$_1$ prototypes, transform rapidly to rocksalt, making it the only option at ambient conditions. These results explain the absence of polymorphism in binary rocksalts, answer why rocksalt is the structure of choice for high-entropy ceramics and disordered ternary nitrides, and help understand/predict metastable states in crystalline solids more generally. △ Less

Submitted 9 February, 2024; originally announced February 2024.

Comments: 8 pages, 4 figures in main text. 16 pages, 6 figures, 8 tables in supplementary information

NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature

Authors: Kingsley Egbo, Emily M. Garrity, William A. Callahan, Chris Chae, Cheng-Wei Lee, Brooks Tellekamp, Jinwoo Hwang, Vladan Stevanovic, Andriy Zakutayev

Abstract: NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga$_{2}$O$_{3}$heterojunction diodes and the formation of NiGa$_{2}$O$_{4}$ interfacial layers when operated at… ▽ More NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga$_{2}$O$_{3}$heterojunction diodes and the formation of NiGa$_{2}$O$_{4}$ interfacial layers when operated at $550^{\circ}$C. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO-Ga$_{2}$O$_{3}$ interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO-Ga$_{2}$O$_{3}$ interface forms ternary compounds at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa$_{2}$O$_{4}$ layer between NiO and Ga$_{2}$O$_{3}$. First-principles defect calculations find that NiGa$_{2}$O$_{4}$ shows low p-type intrinsic doping, and hence can also serve to limit electric field crowding at the interface. Vertical NiO/Ga$_{2}$O$_{3}$ diodes with intentionally grown 5 nm thin spinel-type NiGa$_{2}$O$_{4}$ interfacial layers show excellent device ON/OFF ratio of > 10$^{10}$($\pm$3 V), V$_{ON}$ of ~1.9 V, and breakdown voltage of ~ 1.2 kV for an initial unoptimized 300-micron diameter device. These p-n heterojunction diodes are promising for high-voltage, high-temperature applications. △ Less

Submitted 12 January, 2024; originally announced January 2024.

Comments: 16 pages, 5 figures

Computational insights into phase equilibria between wide-gap semiconductors and contact materials

Authors: Cheng-Wei Lee, Andriy Zakutayev, Vladan Stevanović

Abstract: Novel wide-band-gap semiconductors are needed for next-generation power electronic but there is a gap between a promising material and a functional device. Finding stable contacts is one of the major challenges, which is currently dealt with mainly via trial and error. Herein, we computationally investigate the thermochemistry and phase co-existence at the junction between three wide gap semicondu… ▽ More Novel wide-band-gap semiconductors are needed for next-generation power electronic but there is a gap between a promising material and a functional device. Finding stable contacts is one of the major challenges, which is currently dealt with mainly via trial and error. Herein, we computationally investigate the thermochemistry and phase co-existence at the junction between three wide gap semiconductors, $β$-Ga$_{2}$O$_{3}$, GeO$_2$, and GaN, and possible contact materials. The pool of possible contacts includes 47 elemental metals and 4 common $n$-type transparent conducting oxides (ZnO, TiO$_2$, SnO$_2$, and In$_2$O$_3$). We use first-principles thermodynamics to model the Gibbs free energies of chemical reactions as a function of the gas pressure (p$_{\mathrm{O}_2}$/p$_{\mathrm{N}_2}$) and equilibrium temperature. We deduce whether a semiconductor/contact interface will be stable at relevant conditions, possibly influencing the long-term reliability and performance of devices. We generally find that most elemental metals tend to oxidize or nitridize and form various interface oxide/nitride layers. Exceptions include select late- and post-transition metals, and in case of GaN also the alkali metals, which are predicted to exhibit stable coexistence, although in many cases at relatively low gas partial pressures. Similar is true for the transparent conducting oxides, for which in most cases we predict a preference toward forming ternary oxides when in contact with $β$-Ga$_{2}$O$_{3}$ and GeO$_{2}$. The only exception is SnO$_2$, which can form stable contacts with both oxides. Finally, we show how the same approach can be used to predict gas partial pressure vs. temperature phase diagrams to help direct synthesis of ternary compounds. We believe these results provide a valuable guidance in selecting contact materials to wide-gap semiconductors and suitable growth conditions. △ Less

Submitted 18 December, 2023; originally announced December 2023.

Mechanistically-guided materials chemistry: synthesis of new ternary nitrides, CaZrN$_2$ and CaHfN$_2$

Authors: Christopher L. Rom, Andrew Novick, Matthew J. McDermott, Andrey A. Yakovenko, Jessica R. Gallawa, Gia Thinh Tran, Dominic C. Asebiah, Emily N. Storck, Brennan C. McBride, Rebecca C. Miller, Amy L. Prieto, Kristin A. Persson, Eric Toberer, Vladan Stevanović, Andriy Zakutayev, James R. Neilson

Abstract: Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN$_2$) and calciu… ▽ More Recent computational studies have predicted many new ternary nitrides, revealing synthetic opportunities in this underexplored phase space. However, synthesizing new ternary nitrides is difficult, in part because intermediate and product phases often have high cohesive energies that inhibit diffusion. Here, we report the synthesis of two new phases, calcium zirconium nitride (CaZrN$_2$) and calcium hafnium nitride (CaHfN$_2$), by solid state metathesis reactions between Ca$_3$N$_2$ and $M$Cl$_4$ ($M$ = Zr, Hf). Although the reaction nominally proceeds to the target phases in a 1:1 ratio of the precursors via Ca$_3$N$_2$ + $M$Cl$_4$ $\rightarrow$ Ca$M$N$_2$ + 2 CaCl$_2$, reactions prepared this way result in Ca-poor materials (Ca$_xM_{2-x}$N$_2$, $x<1$). A small excess of Ca$_3$N$_2$ (ca. 20 mol\%) is needed to yield stoichiometric Ca$M$N$_2$, as confirmed by high-resolution synchrotron powder X-ray diffraction. In situ synchrotron X-ray diffraction studies reveal that nominally stoichiometric reactions produce Zr$^{3+}$ intermediates early in the reaction pathway, and the excess Ca$_3$N$_2$ is needed to reoxidize Zr$^{3+}$ intermediates back to the Zr$^{4+}$ oxidation state of CaZrN$_2$. Analysis of computationally-derived chemical potential diagrams rationalizes this synthetic approach and its contrast from the synthesis of MgZrN$_2$. These findings additionally highlight the utility of in situ diffraction studies and computational thermochemistry to provide mechanistic guidance for synthesis. △ Less

Submitted 30 October, 2023; originally announced October 2023.

The Mixing Thermodynamics and Local Structure of High-entropy Alloys from Randomly Sampled Ordered Configurations

Authors: Andrew Novick, Quan Nguyen, Roman Garnett, Eric Toberer, Vladan Stevanović

Abstract: A general method is presented for modeling high entropy alloys as ensembles of randomly sampled, ordered configurations on a given lattice. Statistical mechanics is applied post hoc to derive the ensemble properties as a function of composition and temperature, including the free energy of mixing and local structure. Random sampling is employed to address the high computational costs needed to mod… ▽ More A general method is presented for modeling high entropy alloys as ensembles of randomly sampled, ordered configurations on a given lattice. Statistical mechanics is applied post hoc to derive the ensemble properties as a function of composition and temperature, including the free energy of mixing and local structure. Random sampling is employed to address the high computational costs needed to model alloys with a large number of components. Doing so also provides rigorous convergence criteria, including the quantification of noise due to random sampling, and an estimation of the number of additional samples required to lower this noise to the needed/desired levels. This method is well-suited for a variety of cases: i) high entropy alloys, where standard lattice models are costly; ii) "medium" entropy alloys, where both the entropy and enthalpy play significant roles; and iii) alloys with residual short-range order. Binary to 5-component alloys of the group-IV chalcogenides are used as case examples, for which the predicted miscibility shows excellent agreement with experiment. △ Less

Submitted 23 November, 2022; originally announced November 2022.

Ternary Wide Band Gap Oxides for High-Power Electronics Identified Computationally

Authors: Emily McDonald Garrity, Cheng-Wei Lee, Prashun Gorai, Brooks Tellekamp, Andriy Zakutayev, Vladan Stevanović

Abstract: As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large breakdown field, allowing high operating voltages. Currently explored WBG materials for power electronics are costly (GaN), difficult to synthesize as high-quality sing… ▽ More As electricity grids become more renewable energy-compliant, there will be a need for novel semiconductors that can withstand high power, high voltage, and high temperatures. Wide band gap (WBG) semiconductors tend to exhibit large breakdown field, allowing high operating voltages. Currently explored WBG materials for power electronics are costly (GaN), difficult to synthesize as high-quality single crystals (SiC) and at scale (diamond, BN), have low thermal conductivity ($β$-Ga$_2$O$_3$), or cannot be suitably doped (AlN). We conduct a computational search for novel semiconductors across 1,340 known metal-oxides using first-principles calculations and existing transport models. We calculate the Baliga figure of merit (BFOM) and lattice thermal conductivity ($κ_L$) to identify top candidates for n-type power electronics. We find 40 mostly ternary oxides that have higher $κ_L$ than $β$-Ga$_2$O$_3$ and higher n-type BFOM than SiC and GaN. Among these, several material classes emerge, including 2-2-7 stoichiometry thortveitites and pyrochlores, II-IV spinels, and calcite-type borates. Within these classes, we propose In$_2$Ge$_2$O$_7$, Mg$_2$GeO$_4$, and InBO$_3$ as they are the most favorable for n-type doping based on our preliminary evaluation and could be grown as single crystals or thin film heterostructures. These materials could help advance power electronic devices for the future grid. △ Less

Submitted 19 April, 2022; originally announced April 2022.

Comments: 17 pages, 8 figures, submitted to and in-review at Physical Review X Energy

Theoretical insights for Improving the Schottky-barrier Height at the Ga$_2$O$_3$/Pt Interface

Authors: Félix Therrien, Andriy Zakutayev, Vladan Stevanović

Abstract: In this work we study the Schottky barrier height (SBH) at the junction between $β$-Ga$_2$O$_3$ and platinum, a system of great importance for the next generation of high-power and high-temperature electronic devices. Specifically, we obtain interfacial atomic structures at different orientations using our structure matching algorithm and compute their SBH using electronic structure calculations b… ▽ More In this work we study the Schottky barrier height (SBH) at the junction between $β$-Ga$_2$O$_3$ and platinum, a system of great importance for the next generation of high-power and high-temperature electronic devices. Specifically, we obtain interfacial atomic structures at different orientations using our structure matching algorithm and compute their SBH using electronic structure calculations based on hybrid density functional theory. The orientation and strain of platinum are found to have little impact on the barrier height. In contrast, we find that decomposed water (H.OH), which could be present at the interface from Ga$_2$O$_3$ substrate preparation, has a strong influence on the SBH, in particular in the ($\overline{2}$01) orientation. The SBH can range from $\sim$2 eV for the pristine interface to nearly zero for the full H.OH coverage. This result suggests that SBH of $\sim$2~eV can be achieved for the Ga$_2$O$_3$($\overline{2}$01)/Pt junction using the substrate preparation methods that can reduce the amount of adsorbed water at the interface. △ Less

Submitted 4 January, 2022; v1 submitted 13 July, 2021; originally announced July 2021.

Comments: 12 pages, 6 figures

Journal ref: Physical Review Applied 16.6 (2021): 064064

Transition metal impurities in Silicon: Computational search for a semiconductor qubit

Authors: Cheng-Wei Lee, Meenakshi Singh, Adele Tamboli, Vladan Stevanović

Abstract: Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating temperatures. Learning from the nitrogen-vacancy centers in diamond, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integra… ▽ More Semiconductors offer a promising platform for physical implementation of qubits, but their broad adoption is presently hindered by limited scalability and/or very low operating temperatures. Learning from the nitrogen-vacancy centers in diamond, our goal is to find equivalent optically active point defect centers in crystalline silicon, which could be advantageous for their scalability and integration with classical devices. Transition metal (TM) impurities in silicon are common paramagnetic deep defects, but a comprehensive theoretical study of the whole 3$d$ series that considers generalized Koopmans' condition is missing. We apply the HSE06(+U) method to examine their potential as optically active spin qubits and identify seven TM impurities that have optically allowed triplet-triplet transitions within the silicon band gap. These results provide the first step toward silicon-based qubits with higher operating temperatures for quantum sensing. Additionally, these point defects could lead to spin-photon interfaces in silicon-based qubits and devices for mid-infrared free-space communications. △ Less

Submitted 19 August, 2022; v1 submitted 12 May, 2021; originally announced May 2021.

Journal ref: npj Comput Mater 8, 172 (2022)

Computational Fermi level engineering and doping-type conversion of Ga2O3 via three-step synthesis process

Authors: Anuj Goyal, Andriy Zakutayev, Vladan Stevanović, Stephan Lany

Abstract: Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportu… ▽ More Ga2O3 is being actively explored for high-power and high-temperature electronics, deep-ultraviolet optoelectronics, and other applications. Efficient n-type doping of Ga2O3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga2O3 based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a 3-step growth-annealing-quench synthesis protocol for hydrogen assisted Mg doping in beta-Ga2O3, taking into account the gas phase equilibrium between H2, O2 and H2O, which determines the H chemical potential. We predict Ga2O3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to the Mg acceptor activation by H removal in GaN. For equilibrium annealing there is an optimal temperature that maximizes the Ga2O3 net acceptor density for a given Mg doping level, which is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga2O3 Fermi level drops below mid-gap down to about +1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral MgGa0 acceptors. The Fermi level reduction down to +1.5 eV and suppression of free electron density in this doping type converted (NA > ND) Ga2O3 material is of significance and impact for the design of Ga2O3 power electronics devices. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Search and Structural Featurization of Magnetically Frustrated Kagomé Lattices

Authors: Vanessa Meschke, Prashun Gorai, Vladan Stevanović, Eric S. Toberer

Abstract: We have searched nearly 40,000 inorganic solids in the Inorganic Crystal Structural Database to identify compounds containing a transition metal or rare earth kagomé sublattice, a geometrically magnetically frustrated lattice, ultimately identifying $\sim$500 materials. A broad analysis of the chemical and structural trends of these materials shows three types of kagomé sheet stacking and several… ▽ More We have searched nearly 40,000 inorganic solids in the Inorganic Crystal Structural Database to identify compounds containing a transition metal or rare earth kagomé sublattice, a geometrically magnetically frustrated lattice, ultimately identifying $\sim$500 materials. A broad analysis of the chemical and structural trends of these materials shows three types of kagomé sheet stacking and several classes of magnetic complexity. Following the search and classification, we rapidly screen the magnetic properties of a subset of the materials using density functional theory to eliminate those that are unlikely to exhibit magnetic frustration. From the results of our computational screening, we rediscover six materials that have previously been explored for their low temperature magnetic behavior, albeit showing symmetry breaking distortions, spin glass behavior, or magnetic ordering. However, all are materials with antiferromagnetic behavior, which we correctly predict. Finally, we also report three materials that appear to be unexplored for their magnetic properties. △ Less

Submitted 10 March, 2021; originally announced March 2021.

The role of disorder in the synthesis of metastable zinc zirconium nitrides

Authors: Rachel Woods-Robinson, Vladan Stevanović, Stephan Lany, Karen N. Heinselman, Matthew K. Horton, Kristin A. Persson, Andriy Zakutayev

Abstract: In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride materials, with many possible metastable polymorphs, provide a rich materials space to study what influences thermodynamic stability and polymorph synthesizability. For example, ZnZrN2 is theoretically predicted at zero Kelv… ▽ More In materials science, it is often assumed that ground state crystal structures predicted by density functional theory are the easiest polymorphs to synthesize. Ternary nitride materials, with many possible metastable polymorphs, provide a rich materials space to study what influences thermodynamic stability and polymorph synthesizability. For example, ZnZrN2 is theoretically predicted at zero Kelvin to have an unusual layered "wurtsalt" ground state crystal structure with compelling optoelectronic properties, but it is unknown whether this structure can be realized experimentally under practical synthesis conditions. Here, we use combinatorial sputtering to synthesize hundreds of ZnxZr1-xNy thin film samples, and find metastable rocksalt-derived or boron-nitride-derived structures rather than the predicted wurtsalt structure. Using a statistical polymorph sampler approach, it is demonstrated that although rocksalt is the least stable polymorph at zero Kelvin, it becomes the most stable polymorph at high effective temperatures similar to those achieved using this sputter deposition method, and thus corroborates experimental results. Additional calculations show that this destabilization of the wurtsalt polymorph is due to configurational entropic and enthalpic effects, and that vibrational contributions are negligible. Specifically, rocksalt- and boron-nitride-derived structures become the most stable polymorphs in the presence of disorder because of higher tolerances to cation cross-substitution and off-stoichiometry than the wurtsalt structure. This understanding of the role of disorder tolerance in the synthesis of competing polymorphs can enable more accurate predictions of synthesizable crystal structures and their achievable material properties. △ Less

Submitted 11 March, 2022; v1 submitted 22 December, 2020; originally announced December 2020.

On the Dopability of Semiconductors and Governing Material Properties

Authors: Anuj Goyal, Prashun Gorai, Shashwat Anand, Eric S. Toberer, G. Jeffrey Snyder, Vladan Stevanovic

Abstract: To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit strong preference toward allowing either p- or n-type doping, but not both. In this work, we develop a model description of… ▽ More To be practical, semiconductors need to be doped. Sometimes, to nearly degenerate levels, e.g. in applications such as thermoelectric, transparent electronics or power electronics. However, many materials with finite band gaps are not dopable at all, while many others exhibit strong preference toward allowing either p- or n-type doping, but not both. In this work, we develop a model description of semiconductor dopability and formulate design principles in terms of governing materials properties. Our approach, which builds upon the semiconductor defect theory applied to a suitably devised (tight-binding) model system, reveals analytic relationships between intrinsic materials properties and the semiconductor dopability, and elucidates the role and the insufficiency of previously suggested descriptors such as the absolute band edge positions. We validate our model against a number of classic binary semiconductors and discuss its extension to more complex chemistries and the utility in large-scale material searches. △ Less

Submitted 18 May, 2020; originally announced May 2020.

Journal ref: Chem. Mater. 2020

Minimization of atomic displacements as a guiding principle of the martensitic phase transformation

Authors: Félix Therrien, Vladan Stevanović

Abstract: We present a unifying description for the martensitic transformation of steel that accounts for important experimentally observable features of the transformation namely, the Neumann bands, the interfacial (habit) plane between the transformed and untransformed phases and their orientation relationship (OR). It is obtained through a simple geometric minimization of the total distance traveled by a… ▽ More We present a unifying description for the martensitic transformation of steel that accounts for important experimentally observable features of the transformation namely, the Neumann bands, the interfacial (habit) plane between the transformed and untransformed phases and their orientation relationship (OR). It is obtained through a simple geometric minimization of the total distance traveled by all the atoms from the austenite (FCC or $γ$) phase to the martensite (BCC or $α$) phase, without the need for any explicit energy minimization. Our description unites previously proposed mechanisms but it does not rely on assumptions and experimental knowledge regarding the shear planes and directions, or external adjustable parameters. We show how the Kurdjumov-Sach orientation relationship between the two phases and the $\{225\}_γ$ habit plane, which have both been extensively reported in experiments, naturally emerge from the distance minimization. We also propose an explanation for the occurrence of a different orientation relationship (Pitsch) in thin films. △ Less

Submitted 22 September, 2020; v1 submitted 26 December, 2019; originally announced December 2019.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 125, 125502 (2020)

Matching Crystal Structures Atom-to-Atom

Authors: Félix Therrien, Peter Graf, Vladan Stevanović

Abstract: Finding an optimal match between two different crystal structures underpins many important materials science problems, including describing solid-solid phase transitions, developing models for interface and grain boundary structures. In this work, we formulate the matching of crystals as an optimization problem where the goal is to find the alignment and the atom-to-atom map that minimize a given… ▽ More Finding an optimal match between two different crystal structures underpins many important materials science problems, including describing solid-solid phase transitions, developing models for interface and grain boundary structures. In this work, we formulate the matching of crystals as an optimization problem where the goal is to find the alignment and the atom-to-atom map that minimize a given cost function such as the Euclidean distance between the atoms. We construct an algorithm that directly solves this problem for large finite portions of the crystals and retrieves the periodicity of the match subsequently. We demonstrate its capacity to describe transformation pathways between known polymorphs and to reproduce experimentally realized structures of semi-coherent interfaces. Additionally, from our findings we define a rigorous metric for measuring distances between crystal structures that can be used to properly quantify their geometric (Euclidean) closeness. △ Less

Submitted 20 February, 2020; v1 submitted 27 September, 2019; originally announced September 2019.

Comments: 16 pages, 7 figures

Journal ref: The journal of Chemical Physics 152, 7, pp. 074106 (2020)

The Glassy Solid as a Statistical Ensemble of Crystalline Microstates

Authors: Eric B. Jones, Vladan Stevanovic

Abstract: Motivated by the concept of partial ergodicity, we present an alternative description of covalent and ionic glassy solids as statistical ensembles of crystalline local minima on the potential energy surface. We show analytically that the radial distribution function (RDF) and powder X-ray diffraction (XRD) intensity of ergodic systems can be rigorously formulated as statistical ensemble averages,… ▽ More Motivated by the concept of partial ergodicity, we present an alternative description of covalent and ionic glassy solids as statistical ensembles of crystalline local minima on the potential energy surface. We show analytically that the radial distribution function (RDF) and powder X-ray diffraction (XRD) intensity of ergodic systems can be rigorously formulated as statistical ensemble averages, which we evaluate for amorphous silicon and glassy silica through the first-principles random structure sampling. We show that using structures with unit cells as small as 24 atoms, we are able to accurately replicate the experimental RDF and XRD pattern for amorphous silicon as well as the key structural features for glassy silica, thus supporting the ensemble nature of the glasses and opening the door to fully predictive description without the need for experimental inputs. △ Less

Submitted 15 February, 2019; originally announced February 2019.

Effective $n$-type Doping of Mg$_3$Sb$_2$ with Group-3 Elements

Authors: Prashun Gorai, Eric S. Toberer, Vladan Stevanovic

Abstract: The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as extrinsic dopants. Using first-principles defect calculations, we previously predicted that higher electron concentrations ($\sim10^{20}$ cm$^{-3}$) can be ach… ▽ More The recent discovery of high thermoelectric performance in Mg$_3$Sb$_2$ has been critically enabled by the success in $n$-type doping of this material, which is achieved under Mg-rich growth conditions, typically with chalcogens (Se, Te) as extrinsic dopants. Using first-principles defect calculations, we previously predicted that higher electron concentrations ($\sim10^{20}$ cm$^{-3}$) can be achieved in Mg$_3$Sb$_2$ by doping with La instead of Se or Te. Subsequent experiments showed that free electron concentration in La-doped Mg$_3$Sb$_{2-x}$Bi$_x$ indeed exceeds those in the Te-doped material. Herein, we further investigate $n$-type doping of Mg$_3$Sb$_2$ and predict that, in addition to La, other group-3 elements (Sc, Y) are also effective as $n$-type dopants; Y is as good as La while Sc slightly less. Overall, we find that doping with any group-3 elements should lead to higher free electron concentrations than doping with chalcogens. △ Less

Submitted 16 November, 2018; v1 submitted 18 October, 2018; originally announced October 2018.

Ionic vs. van der Waals Layered Materials: Identification and Comparison of Elastic Anisotropy

Authors: Robert McKinney, Prashun Gorai, Sukriti Manna, Eric Toberer, Vladan Stevanović

Abstract: In this work, we expand the set of known layered compounds to include ionic layered materials, which are well known for superconducting, thermoelectric, and battery applications. Focusing on known ternary compounds from the ICSD, we screen for ionic layered structures by expanding upon our previously developed algorithm for identification of van der Waals (vdW) layered structures, thus identifying… ▽ More In this work, we expand the set of known layered compounds to include ionic layered materials, which are well known for superconducting, thermoelectric, and battery applications. Focusing on known ternary compounds from the ICSD, we screen for ionic layered structures by expanding upon our previously developed algorithm for identification of van der Waals (vdW) layered structures, thus identifying over 1,500 ionic layered compounds. Since vdW layered structures can be chemically mutated to form ionic layered structures, we have developed a methodology to structurally link binary vdW to ternary ionic layered materials. We perform an in-depth analysis of similarities and differences between these two classes of layered systems and assess the interplay between layer geometry and bond strength with a study of the elastic anisotropy. We observe a rich variety of anisotropic behavior in which the layering direction alone is not a simple predictor of elastic anisotropy. Our results enable discovery of new layered materials through intercalation or de- intercalation of vdW or ionic layered systems, respectively, as well as lay the groundwork for studies of anisotropic transport phenomena such as sound propagation or lattice thermal conductivity. △ Less

Submitted 26 May, 2018; originally announced May 2018.

Physical descriptor for the Gibbs energy of inorganic crystalline solids and temperature-dependent materials chemistry

Authors: Christopher J. Bartel, Samantha L. Millican, Ann M. Deml, John R. Rumptz, William Tumas, Alan W. Weimer, Stephan Lany, Vladan Stevanović, Charles B. Musgrave, Aaron M. Holder

Abstract: The Gibbs energy, G, determines the equilibrium conditions of chemical reactions and materials stability. Despite this fundamental and ubiquitous role, G has been tabulated for only a small fraction of known inorganic compounds, impeding a comprehensive perspective on the effects of temperature and composition on materials stability and synthesizability. Here, we use the SISSO (sure independence s… ▽ More The Gibbs energy, G, determines the equilibrium conditions of chemical reactions and materials stability. Despite this fundamental and ubiquitous role, G has been tabulated for only a small fraction of known inorganic compounds, impeding a comprehensive perspective on the effects of temperature and composition on materials stability and synthesizability. Here, we use the SISSO (sure independence screening and sparsifying operator) approach to identify a simple and accurate descriptor to predict G for stoichiometric inorganic compounds with ~50 meV/atom (~1 kcal/mol) resolution, and with minimal computational cost, for temperatures ranging from 300-1800 K. We then apply this descriptor to ~30,000 known materials curated from the Inorganic Crystal Structure Database (ICSD). Using the resulting predicted thermochemical data, we generate thousands of temperature-dependent phase diagrams to provide insights into the effects of temperature and composition on materials synthesizability and stability and to establish the temperature-dependent scale of metastability for inorganic compounds. △ Less

Submitted 6 January, 2019; v1 submitted 21 May, 2018; originally announced May 2018.

Journal ref: Nature Communications 9, 4168 (2018)

Large Piezoelectric Response of van der Waals Layered Solids

Authors: Sukriti Manna, Prashun Gorai, Geoff L. Brennecka, Cristian V. Ciobanu, Vladan Stevanović

Abstract: The bulk piezoelectric response, as measured by the piezoelectric modulus tensor (\textbf{d}), is determined by a combination of charge redistribution due to strain and the amount of strain produced by the application of stress (stiffness). Motivated by the notion that less stiff materials could exhibit large piezoelectric responses, herein we investigate the piezoelectric modulus of van der Waals… ▽ More The bulk piezoelectric response, as measured by the piezoelectric modulus tensor (\textbf{d}), is determined by a combination of charge redistribution due to strain and the amount of strain produced by the application of stress (stiffness). Motivated by the notion that less stiff materials could exhibit large piezoelectric responses, herein we investigate the piezoelectric modulus of van der Waals-bonded quasi-2D ionic compounds using first-principles calculations. From a pool of 869 known binary and ternary quasi-2D materials, we have identified 135 non-centrosymmetric crystals of which 48 systems are found to have \textbf{d} components larger than the longitudinal piezoelectric modulus of AlN (a common piezoelectric for resonators), and three systems with the response greater than that of PbTiO$_3$, which is among the materials with largest known piezoelectric modulus. None of the identified materials have previously been considered for piezoelectric applications. Furthermore, we find that large \textbf{d} components always couple to the deformations (shearing or axial) of van der Waals "gaps" between the layers and are indeed enabled by the weak intra-layer interactions. △ Less

Submitted 29 April, 2018; originally announced April 2018.

Journal ref: Journal of Materials Chemistry C 6 (41), 11035-11044 (2018)

Thermodynamic Stability of Molybdenum Oxycarbides Formed from Orthorhombic Mo2C in Oxygen-rich Environments

Authors: S. R. J. Likith, C. A. Farberow, S. Manna, A. Abdulslam, V. Stevanović, D. A. Ruddy, J. A. Schaidle, D. J. Robichaud, C. V. Ciobanu

Abstract: Molybdenum carbide (Mo2C) nanoparticles and thin films are particularly suitable catalysts for catalytic fast pyrolysis (CFP) as they are effective for deoxygenation and can catalyze certain reactions that typically occur on noble metals. Oxygen deposited during deoxygenation reactions may alter the carbide structure leading to the formation of oxycarbides, which can determine changes in catalytic… ▽ More Molybdenum carbide (Mo2C) nanoparticles and thin films are particularly suitable catalysts for catalytic fast pyrolysis (CFP) as they are effective for deoxygenation and can catalyze certain reactions that typically occur on noble metals. Oxygen deposited during deoxygenation reactions may alter the carbide structure leading to the formation of oxycarbides, which can determine changes in catalytic activity or selectivity. Despite emerging spectroscopic evidence of bulk oxycarbides, so far there have been no reports of their precise atomic structure or their relative stability with respect to orthorhombic Mo2C. This knowledge is essential for assessing the catalytic properties of molybdenum (oxy)carbides for CFP. In this article, we use density functional theory (DFT) calculations to (a) describe the thermodynamic stability of surface and subsurface configurations of oxygen and carbon atoms for a commonly studied Mo-terminated surface of orthorhombic Mo2C, and (b) determine atomic structures for oxycarbides with a Mo:C ratio of 2:1. The surface calculations suggest that oxygen atoms are not stable under the top Mo layer of the Mo2C(100) surface. Coupling DFT calculations with a polymorph sampling method, we determine (Mo2C)xOy oxycarbide structures for a wide range of oxygen compositions. Oxycarbides with lower oxygen content (y/x <=2) adopt layered structures reminiscent of the parent carbide phase, with flat Mo layers separated by layers of oxygen and carbon; for higher oxygen content, our results suggest the formation of amorphous phases, as the atomic layers lose their planarity with increasing oxygen content. △ Less

Submitted 30 March, 2018; originally announced March 2018.

Journal ref: J. Phys. Chem. C, 2018, 122 (2), pp 1223-1233

Accelerating Materials Development via Automation, Machine Learning, and High-Performance Computing

Authors: Juan Pablo Correa-Baena, Kedar Hippalgaonkar, Jeroen van Duren, Shaffiq Jaffer, Vijay R. Chandrasekhar, Vladan Stevanovic, Cyrus Wadia, Supratik Guha, Tonio Buonassisi

Abstract: Successful materials innovations can transform society. However, materials research often involves long timelines and low success probabilities, dissuading investors who have expectations of shorter times from bench to business. A combination of emergent technologies could accelerate the pace of novel materials development by 10x or more, aligning the timelines of stakeholders (investors and resea… ▽ More Successful materials innovations can transform society. However, materials research often involves long timelines and low success probabilities, dissuading investors who have expectations of shorter times from bench to business. A combination of emergent technologies could accelerate the pace of novel materials development by 10x or more, aligning the timelines of stakeholders (investors and researchers), markets, and the environment, while increasing return-on-investment. First, tool automation enables rapid experimental testing of candidate materials. Second, high-throughput computing (HPC) concentrates experimental bandwidth on promising compounds by predicting and inferring bulk, interface, and defect-related properties. Third, machine learning connects the former two, where experimental outputs automatically refine theory and help define next experiments. We describe state-of-the-art attempts to realize this vision and identify resource gaps. We posit that over the coming decade, this combination of tools will transform the way we perform materials research. There are considerable first-mover advantages at stake, especially for grand challenges in energy and related fields, including computing, healthcare, urbanization, water, food, and the environment. △ Less

Submitted 20 March, 2018; originally announced March 2018.

Comments: 22 pages, 3 figures

Journal ref: Joule 2 (2018) 1410-1420

Metastable rocksalt ZnO is $p$-type dopable

Authors: Anuj Goyal, Vladan Stevanović

Abstract: Despite decades of efforts, achieving $p$-type conductivity in the wide band gap ZnO in its ground-state wurtzite structure continues to be a challenge. Here we detail how $p$-type ZnO can be realized in the metastable, high-pressure rocksalt phase (also wide-gap) with Li as an external dopant. Using modern first-principles defect theory, we predict Li to dope the rocksalt phase $p$-type by prefer… ▽ More Despite decades of efforts, achieving $p$-type conductivity in the wide band gap ZnO in its ground-state wurtzite structure continues to be a challenge. Here we detail how $p$-type ZnO can be realized in the metastable, high-pressure rocksalt phase (also wide-gap) with Li as an external dopant. Using modern first-principles defect theory, we predict Li to dope the rocksalt phase $p$-type by preferentially substituting for Zn and introducing shallow acceptor levels. Formation of compensating donors like interstitial Li and/or hydrogen, ubiqutous in the wurtzite phase, is inhibited by the close-packed nature of the rocksalt structure, which also exhibits relatively high absolute valence band edge that promotes low hole effective mass and hole delocalization. Resulting concentrations of free holes are predicted to exceed $\sim10^{19}$ cm$^{-3}$ under O-rich synthesis conditions while under O-poor conditions the system remains $n$-type dopable. In addition to revealing compelling opportunities offered by the metastable rocksalt structure in realizing a long-sought $p$-type ZnO our results present polymorphism as a promising route to overcoming strong doping asymmetry of wide-band gap oxides. △ Less

Submitted 16 March, 2018; v1 submitted 1 February, 2018; originally announced February 2018.

Comments: Updated with actual Fig. 3. In original submission, Fig. 3 was an older version, which does not include possibility of different geometries for hydrogen interstitial and thereby, has slightly inaccurate position of H(1/1-) transition

Journal ref: Phys. Rev. Materials 2, 084603 (2018)

Critical role of electronic correlations in determining crystal structure of transition metal compounds

Authors: Nicola Lanatà, Tsung-Han Lee, Yong-Xin Yao, Vladan Stevanović, Vladimir Dobrosavljević

Abstract: The choice that a solid system "makes" when adopting a crystal structure (stable or metastable) is ultimately governed by the interactions between electrons forming chemical bonds. By analyzing 6 prototypical binary transition-metal compounds we demonstrate here that the orbitally-selective strong $d$-electron correlations influence dramatically the behavior of the energy as a function of the spat… ▽ More The choice that a solid system "makes" when adopting a crystal structure (stable or metastable) is ultimately governed by the interactions between electrons forming chemical bonds. By analyzing 6 prototypical binary transition-metal compounds we demonstrate here that the orbitally-selective strong $d$-electron correlations influence dramatically the behavior of the energy as a function of the spatial arrangements of the atoms. Remarkably, we find that the main qualitative features of this complex behavior can be traced back to simple electrostatics, i.e., to the fact that the strong $d$-electron correlations influence substantially the charge transfer mechanism, which, in turn, controls the electrostatic interactions. This result advances our understanding of the influence of strong correlations on the crystal structure, opens a new avenue for extending structure prediction methodologies to strongly correlated materials, and paves the way for predicting and studying metastability and polymorphism in these systems. △ Less

Submitted 27 February, 2018; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: Main text: 8 pages, 4 figures, 1 table; Supplemental material: 2 pages, 1 figure, 2 tables

Journal ref: npj Computational Materials, 5, 30 (2019)

Predicting kinetics of polymorphic transformations from structure mapping and coordination analysis

Authors: Vladan Stevanovic, Ryan Trottier, Felix Therrien, Charles Musgrave, Aaron Holder, Peter Graf

Abstract: To extend rational materials design and discovery into the space of metastable polymorphs, rapid and reliable assessment of their lifetimes is essential. Motivated by the early work of Buerger (1951), here we investigate the routes to predict kinetics of polymorphic transformations using solely crystallographic arguments. As part of this investigation we developed a general algorithm to map crysta… ▽ More To extend rational materials design and discovery into the space of metastable polymorphs, rapid and reliable assessment of their lifetimes is essential. Motivated by the early work of Buerger (1951), here we investigate the routes to predict kinetics of polymorphic transformations using solely crystallographic arguments. As part of this investigation we developed a general algorithm to map crystal structures onto each other and construct transformation pathways between them. The developed algorithm reproduces reliably known transformation pathways and reveals the critical role that the dissociation of chemical bonds along the pathway plays in choosing the best (low-energy barrier) mapping. By utilizing our structure-mapping algorithm we were able to quantitatively demonstrate the intuitive expectation that the minimal dissociation of chemical bonds along the pathway, or in ionic systems, the condition of coordination of atoms along the pathway not decreasing below the coordination in the end compounds, represents the requirement for fast transformation kinetics. We also demonstrate the effectiveness of the structure-mapping algorithm in combination with the coordination analysis in studying transformations between polymorphs for which a detailed atomic-level picture is presently elusive. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. Materials 2, 033802 (2018)

Polymorphism in elemental silicon: Probabilistic interpretation of the realizability of metastable structures

Authors: Eric Jones, Vladan Stevanovic

Abstract: With few systems of technological interest having been studied as extensively as elemental silicon, there currently exists a wide disparity between the number of predicted low-energy silicon polymorphs and those, which have been experimentally realized as metastable at ambient conditions. We put forward an explanation for this disparity wherein the likelihood of formation of a given polymorph unde… ▽ More With few systems of technological interest having been studied as extensively as elemental silicon, there currently exists a wide disparity between the number of predicted low-energy silicon polymorphs and those, which have been experimentally realized as metastable at ambient conditions. We put forward an explanation for this disparity wherein the likelihood of formation of a given polymorph under near-equilibrium conditions can be estimated on the basis of mean field isothermal-isobaric (N, p, T) ensemble statistics. The probability that a polymorph will be experimentally realized is shown to depend upon both the hypervolume of that structure's potential energy basin of attraction and a Boltzmann factor weight containing the polymorph's potential enthalpy per particle. Both attributes are calculated using density functional theory relaxations of randomly generated initial structures. We find that the metastable polymorphism displayed by silicon can be accounted for using this framework to the exclusion of a very large number of other low-energy structures. △ Less

Submitted 29 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 96, 184101 (2017)

Enhanced piezoelectric response of AlN via CrN alloying

Authors: Sukriti Manna, Kevin R. Talley, Prashun Gorai, John Mangum, Andriy Zakutayev, Geoff L. Brennecka, Vladan Stevanović, Cristian V. Ciobanu

Abstract: Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. Herein, we report density functional theory calculations of structure and properties of the Cr-AlN system for Cr concentrations ranging past the wurtzite… ▽ More Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. Herein, we report density functional theory calculations of structure and properties of the Cr-AlN system for Cr concentrations ranging past the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in Cr$_x$Al$_{1-x}$N alloys is the increase of the internal parameter $u$ of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we have found that Cr-AlN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Cr-AlN is a viable piezoelectric material whose properties can be tuned via Cr composition; we support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30\% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus $d_{33}$ is approximately four times larger than that of pure AlN. This finding, combined with the relative ease of synthesis, may propel Cr-AlN as the prime piezoelectric material for applications such as resonators and acoustic wave generators. △ Less

Submitted 9 March, 2018; v1 submitted 1 August, 2017; originally announced August 2017.

Comments: Submitted to Physical Review Applied

Journal ref: Phys. Rev. Applied 9, 034026 (2018)

Tuning the piezoelectric and mechanical properties of the AlN system via alloying with YN and BN

Authors: Sukriti Manna, Geoff L. Brennecka, Vladan Stevanović, Cristian V. Ciobanu

Abstract: Recent advances in microelectromechanical systems often require multifunctional materials, which are designed so as to optimize more than one property. Using density functional theory calculations for alloyed nitride systems, we illustrate how co-alloying a piezoelectric material (AlN) with different nitrides helps tune both its piezoelectric and mechanical properties simultaneously. Wurtzite AlN-… ▽ More Recent advances in microelectromechanical systems often require multifunctional materials, which are designed so as to optimize more than one property. Using density functional theory calculations for alloyed nitride systems, we illustrate how co-alloying a piezoelectric material (AlN) with different nitrides helps tune both its piezoelectric and mechanical properties simultaneously. Wurtzite AlN-YN alloys display increased piezoelectric response with YN concentration, accompanied by mechanical softening along the crystallographic c direction. Both effects increase the electromechanical coupling coefficients relevant for transducers and actuators. Resonator applications, however, require superior stiffness, thus leading to the need to decouple the increased piezoelectric response from a softened lattice. We show that co-alloying of AlN with YN and BN results in improved elastic properties while retaining most of the piezoelectric enhancements from YN alloying. This finding may lead to new avenues for tuning the design properties of piezoelectrics through composition-property maps. Keywords: piezoelectricity, electromechanical coupling, density functional theory, co-alloying △ Less

Submitted 11 August, 2017; v1 submitted 1 June, 2017; originally announced June 2017.

Comments: submitted to Journal of Applied Physics

Journal ref: Journal of Applied Physics 122 (10), 105101 (2017)

A Computational Framework for Automation of Point Defect Calculations

Authors: Anuj Goyal, Prashun Gorai, Haowei Peng, Stephan Lany, Vladan Stevanovic

Abstract: A complete and rigorously validated open-source Python framework to automate point defect calculations using density functional theory has been developed. The framework provides an effective and efficient method for defect structure generation, and creation of simple yet customizable workflows to analyze defect calculations. The package provides the capability to compute widely-accepted correction… ▽ More A complete and rigorously validated open-source Python framework to automate point defect calculations using density functional theory has been developed. The framework provides an effective and efficient method for defect structure generation, and creation of simple yet customizable workflows to analyze defect calculations. The package provides the capability to compute widely-accepted correction schemes to overcome finite-size effects, including (1) potential alignment, (2) image-charge correction, and (3) band filling correction to shallow defects. Using Si, ZnO and In$_2$O$_3$ as test examples, we demonstrate the package capabilities and validate the methodology. △ Less

Submitted 2 November, 2016; originally announced November 2016.

Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures

Authors: Christopher M. Caskey, Aaron Holder, Sarah Shulda, Steve Christensen, David Diercks, Craig P. Schwartz, David Biagioni, Dennis Nordlund, Alon Kukliansky, Amir Natan, David Prendergast, Bernardo Orvananos, Wenhao Sun, Xiuwen Zhang, Gerbrand Ceder, William Tumas, David S. Ginley, John D. Perkins, Vladan Stevanovic, Svitlana Pylypenko, Stephan Lany, Ryan M. Richards, Andriy Zakutayev

Abstract: Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research ch… ▽ More Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials. △ Less

Submitted 18 January, 2016; originally announced January 2016.

Sampling polymorphs of ionic solids using random superlattices

Authors: Vladan Stevanovic

Abstract: Polymorphism offers rich and virtually unexplored space for discovering novel functional materials. To harness this potential approaches capable of both exploring the space of polymorphs and assessing their realizability are needed. One such approach devised for partially ionic solids is presented. The structure prediction part is carried out by performing local DFT relaxations on a large set of r… ▽ More Polymorphism offers rich and virtually unexplored space for discovering novel functional materials. To harness this potential approaches capable of both exploring the space of polymorphs and assessing their realizability are needed. One such approach devised for partially ionic solids is presented. The structure prediction part is carried out by performing local DFT relaxations on a large set of random supperlattices (RSLs) with atoms distributed randomly over different planes in a way that favors cation-anion coordination. Applying the RSL sampling on MgO, ZnO and SnO2 reveals that the resulting probability of occurrence of a given structure offers a measure of its realizability explaining fully the experimentally observed, metastable polymorphs in these three systems. △ Less

Submitted 19 September, 2015; originally announced September 2015.

Solar energy conversion properties and defect physics of ZnSiP$_2$

Authors: Aaron D. Martinez, Emily L. Warren, Prashun Gorai, Kasper A. Borup, Darius Kuciauskas, Patricia C. Dippo, Brenden R. Ortiz, Robin T. Macaluso, Sau D. Nguyen, Ann L. Greenaway, Shannon W. Boettcher, Andrew G. Norman, Vladan Stevanović, Eric S. Toberer, Adele C. Tamboli

Abstract: Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with… ▽ More Implementation of an optically active material on silicon has been a persistent technological challenge. For tandem photovoltaics using a Si bottom cell, as well as for other optoelectronic applications, there has been a longstanding need for optically active, wide band gap materials that can be integrated with Si. ZnSiP$_2$ is a stable, wide band gap (2.1 eV) material that is lattice matched with silicon and comprised of inexpensive elements. As we show in this paper, it is also a defect-tolerant material. Here, we report the first ZnSiP$_2$ photovoltaic device. We show that ZnSiP$_2$ has excellent photoresponse and high open circuit voltage of 1.3 V, as measured in a photoelectrochemical configuration. The high voltage and low band gap-voltage offset are on par with much more mature wide band gap III-V materials. Photoluminescence data combined with theoretical defect calculations illuminate the defect physics underlying this high voltage, showing that the intrinsic defects in ZnSiP$_2$ are shallow and the minority carrier lifetime is 7 ns. These favorable results encourage the development of ZnSiP$_2$ and related materials as photovoltaic absorber materials. △ Less

Submitted 29 December, 2015; v1 submitted 17 June, 2015; originally announced June 2015.

Comments: As accepted by EES on December 11th, 2015

Identifying defect-tolerant semiconductors with high minority carrier lifetimes: Beyond hybrid lead halide perovskites

Authors: Riley E. Brandt, Vladan Stevanović, David S. Ginley, Tonio Buonassisi

Abstract: The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this "defect tolerance" emerges from fundamental electronic structure properties, including the orbital character of the conduction and valence band e… ▽ More The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this "defect tolerance" emerges from fundamental electronic structure properties, including the orbital character of the conduction and valence band extrema, the effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX3. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes. △ Less

Submitted 21 May, 2015; v1 submitted 8 April, 2015; originally announced April 2015.

Comments: 4 Figures, 1 Table. Appears in MRS Communications (2015), 1-11

Electronic band structure and ambipolar electrical properties of Cu2O based semiconductor alloys

Authors: Vladan Stevanovic, Andriy Zakutayev, Stephan Lany

Abstract: Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional materials is conceivable when considering more complex alloys by mixing aliovalent and heterostructural constituents. The real challenge lies in the quantitativ… ▽ More Tuning the opto-electronic properties through alloying is essential for semiconductor technology. Currently, mostly isovalent and isostructural alloys are used (e.g., group-IV and III-V), but a vast and unexplored space of novel functional materials is conceivable when considering more complex alloys by mixing aliovalent and heterostructural constituents. The real challenge lies in the quantitative property prediction for such complex alloys to guide their experimental exploration. We developed an approach to predict compositional dependence of both band-structure and electrical properties from ab-initio calculations by extending conventional dilute defect model to higher (alloy) concentrations. Considering alloying of aliovalent (Mg, Zn, Cd) cations and isovalent anions (S, Se) into Cu2O, we predict tunability of band-gap energies and doping levels over a wide range, including the type conversion from p- to n-type. Initial synthesis and characterization of Zn and Se substituted Cu2O support the defect model, suggesting these alloys as promising novel oxide semiconductor materials. △ Less

Submitted 1 July, 2014; originally announced July 2014.

Comments: 11 pages, 6 figures