Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures
Authors:
Christopher M. Caskey,
Aaron Holder,
Sarah Shulda,
Steve Christensen,
David Diercks,
Craig P. Schwartz,
David Biagioni,
Dennis Nordlund,
Alon Kukliansky,
Amir Natan,
David Prendergast,
Bernardo Orvananos,
Wenhao Sun,
Xiuwen Zhang,
Gerbrand Ceder,
William Tumas,
David S. Ginley,
John D. Perkins,
Vladan Stevanovic,
Svitlana Pylypenko,
Stephan Lany,
Ryan M. Richards,
Andriy Zakutayev
Abstract:
Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research ch…
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Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.
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Submitted 18 January, 2016;
originally announced January 2016.
Identifying defect-tolerant semiconductors with high minority carrier lifetimes: Beyond hybrid lead halide perovskites
Authors:
Riley E. Brandt,
Vladan Stevanović,
David S. Ginley,
Tonio Buonassisi
Abstract:
The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this "defect tolerance" emerges from fundamental electronic structure properties, including the orbital character of the conduction and valence band e…
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The emergence of methyl-ammonium lead halide (MAPbX3) perovskites motivates the identification of unique properties giving rise to exceptional bulk transport properties, and identifying future materials with similar properties. Here, we propose that this "defect tolerance" emerges from fundamental electronic structure properties, including the orbital character of the conduction and valence band extrema, the effective masses, and the static dielectric constant. We use MaterialsProject.org searches and detailed electronic-structure calculations to demonstrate these properties in other materials than MAPbX3. This framework of materials discovery may be applied more broadly, to accelerate discovery of new semiconductors based on emerging understanding of recent successes.
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Submitted 21 May, 2015; v1 submitted 8 April, 2015;
originally announced April 2015.