Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures
Authors:
Christopher M. Caskey,
Aaron Holder,
Sarah Shulda,
Steve Christensen,
David Diercks,
Craig P. Schwartz,
David Biagioni,
Dennis Nordlund,
Alon Kukliansky,
Amir Natan,
David Prendergast,
Bernardo Orvananos,
Wenhao Sun,
Xiuwen Zhang,
Gerbrand Ceder,
William Tumas,
David S. Ginley,
John D. Perkins,
Vladan Stevanovic,
Svitlana Pylypenko,
Stephan Lany,
Ryan M. Richards,
Andriy Zakutayev
Abstract:
Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research ch…
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Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.
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Submitted 18 January, 2016;
originally announced January 2016.
Understanding and Control of Bipolar Doping in Copper Nitride
Authors:
Angela N Fioretti,
Craig P Schwartz,
John Vinson,
Dennis Nordlund,
David Prendergast,
Adele C Tamboli,
Christopher M Caskey,
Filip Tuomisto,
Florence Linez,
Steven T Christensen,
Eric S Toberer,
Stephan Lany,
Andriy Zakutayev
Abstract:
Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the l…
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Semiconductor materials that can be doped both n-type and p-type are desirable for diode-based applications and transistor technology. Copper nitride (Cu3N) is a metastable semiconductor with a solar-relevant bandgap that has been reported to exhibit bipolar doping behavior. However, deeper understanding and better control of the mechanism behind this behavior in Cu3N is currently lacking in the literature. In this work, we use combinatorial growth with a temperature gradient to demonstrate both conduction types of phase-pure, sputter-deposited Cu3N thin films. Room temperature Hall effect and Seebeck effect measurements show n-type Cu3N with 10^17 electrons/cm^3 for low growth temperature (~35 degrees C) and p-type with 10^15-10^16 holes/cm^3 for elevated growth temperatures (50-120 degrees C). Mobility for both types of Cu3N was ~0.1-1 cm^2/Vs. Additionally, temperature- dependent Hall effect measurements indicate that ionized defects are an important scattering mechanism in p-type films. By combining X-ray absorption spectroscopy and first-principles defect theory, we determined that V_Cu defects form preferentially in p-type Cu3N while Cu_i defects form preferentially in n-type Cu3N. Based on these theoretical and experimental results, we propose a kinetic defect formation mechanism for bipolar doping in Cu3N, that is also supported by positron annihilation experiments. Overall, the results of this work highlight the importance of kinetic processes in the defect physics of metastable materials, and provide a framework that can be applied when considering the properties of such materials in general.
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Submitted 13 January, 2016;
originally announced January 2016.
