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Vapor deposition rate modifies anisotropic glassy structure of an anthracene-based organic semiconductor
Authors:
Camille Bishop,
Kushal Bagchi,
Michael F. Toney,
M. D. Ediger
Abstract:
We control the anisotropic molecular packing of vapor-deposited glasses of ABH113, a deuterated anthracene derivative with promise for future OLED materials, by changing the deposition rate and substrate temperature at which they are prepared. We find that, at substrate temperatures from 0.65Tg to 0.92Tg, deposition rate significantly modifies the orientational order in the vapor-deposited glasses…
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We control the anisotropic molecular packing of vapor-deposited glasses of ABH113, a deuterated anthracene derivative with promise for future OLED materials, by changing the deposition rate and substrate temperature at which they are prepared. We find that, at substrate temperatures from 0.65Tg to 0.92Tg, deposition rate significantly modifies the orientational order in the vapor-deposited glasses as characterized by X-ray scattering and birefringence. Both measures of anisotropic order can be described by a single deposition rate-substrate temperature superposition (RTS). This supports the applicability of the surface equilibration mechanism and generalizes the RTS principle from previous model systems with liquid crystalline order to non-mesogenic organic semiconductors. We find that vapor-deposited glasses of ABH113 have significantly enhanced density and thermal stability compared to their counterparts prepared by liquid-cooling. For organic semiconductors, the results of this study provide an efficient guide for using deposition rate to prepare stable glasses with controlled molecular packing.
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Submitted 13 October, 2021;
originally announced October 2021.
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Unraveling the Unconventional Order of a High-Mobility Indacenodithiophene-Benzothiadiazole Copolymer
Authors:
Camila Cendra,
Luke Balhorn,
Weimin Zhang,
Kathryn O'Hara,
Karsten Bruening,
Christopher J. Tassone,
Hans-Georg Steinrück,
Mengning Liang,
Michael F. Toney,
Iain McCulloch,
Michael L. Chabinyc,
Alberto Salleo,
Christopher J. Takacs
Abstract:
A new class of donor-acceptor (D-A) copolymers found to produce high charge carrier mobilities competitive with amorphous silicon ($> 1 cm^{2}V^{-1}s^{-1}$) exhibits the puzzling microstructure of substantial local order, however lacking long-range order and crystallinity previously deemed necessary for achieving high mobility. Here, we demonstrate the application of low-dose transmission electron…
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A new class of donor-acceptor (D-A) copolymers found to produce high charge carrier mobilities competitive with amorphous silicon ($> 1 cm^{2}V^{-1}s^{-1}$) exhibits the puzzling microstructure of substantial local order, however lacking long-range order and crystallinity previously deemed necessary for achieving high mobility. Here, we demonstrate the application of low-dose transmission electron microscopy to image and quantify the nanoscale and mesoscale organization of an archetypal D-A copolymer across areas comparable to electronic devices (~ $9 μm^{2}$). The local structure is spatially resolved by mapping the backbone (001) spacing reflection, revealing nanocrystallites of aligned polymer chains over nearly the entire film. Analysis of the nanoscale structure of its ordered domains suggests significant short- and medium-range order and preferential grain boundary orientations. Moreover, we provide insights into the rich, interconnected mesoscale organization of this new family of D-A copolymers by analysis of the local orientational spatial autocorrelations.
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Submitted 28 April, 2021;
originally announced April 2021.
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Electrochemical Ion Insertion: From Atoms to Devices
Authors:
Aditya Sood,
Andrey D. Poletayev,
Daniel A. Cogswell,
Peter M. Csernica,
J. Tyler Mefford,
Dimitrios Fraggedakis,
Michael F. Toney,
Aaron M. Lindenberg,
Martin Z. Bazant,
William C. Chueh
Abstract:
Electrochemical ion insertion involves coupled ion-electron transfer reactions, transport of guest species, and redox of the host. The hosts are typically anisotropic solids with two-dimensional conduction planes, but can also be materials with one-dimensional or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage, but also find…
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Electrochemical ion insertion involves coupled ion-electron transfer reactions, transport of guest species, and redox of the host. The hosts are typically anisotropic solids with two-dimensional conduction planes, but can also be materials with one-dimensional or isotropic transport pathways. These insertion compounds have traditionally been studied in the context of energy storage, but also find extensive applications in electrocatalysis, optoelectronics, and computing. Recent developments in operando, ultrafast, and high-resolution characterization methods, as well as accurate theoretical simulation methods, have led to a renaissance in the understanding of ion-insertion compounds. In this Review, we present a unified framework for understanding insertion compounds across time and length scales ranging from atomic to device levels. Using graphite, transition metal dichalcogenides, layered oxides, oxyhydroxides, and olivines as examples, we explore commonalities in these materials in terms of point defects, interfacial reactions, and phase transformations. We illustrate similarities in the operating principles of various ion-insertion devices ranging from batteries and electrocatalysts to electrochromics and thermal transistors, with the goal of unifying research across disciplinary boundaries.
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Submitted 25 November, 2020;
originally announced November 2020.
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Visualization of Dynamic Polaronic Strain Fields in Hybrid Lead Halide Perovskites
Authors:
B. Guzelturk,
T. Winkler,
T. Van de Goor,
M. D. Smith,
S. A. Bourelle,
S. Feldmann,
M. Trigo,
S. Teitelbaum,
H-G. Steinrück,
G. A. de la Pena,
R. Alonso-Mori,
D. Zhu,
T. Sato,
H. I. Karunadasa,
M. F. Toney,
F. Deschler,
A. M. Lindenberg
Abstract:
Excitation localization involving dynamic nanoscale distortions is a central aspect of photocatalysis, quantum materials and molecular optoelectronics. Experimental characterization of such distortions requires techniques sensitive to the formation of point-defect-like local structural rearrangements in real time. Here, we visualize excitation-induced strain fields in a prototypical member of the…
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Excitation localization involving dynamic nanoscale distortions is a central aspect of photocatalysis, quantum materials and molecular optoelectronics. Experimental characterization of such distortions requires techniques sensitive to the formation of point-defect-like local structural rearrangements in real time. Here, we visualize excitation-induced strain fields in a prototypical member of the lead halide perovskites via femtosecond resolution diffuse x-ray scattering measurements. This enables momentum-resolved phonon spectroscopy of the locally-distorted structure and reveals radially-expanding nanometer-scale elastic strain fields associated with the formation and relaxation of polarons in photoexcited perovskites. Quantitative estimates of the magnitude and the shape of this polaronic distortion are obtained, providing direct insights into the debated dynamic structural distortions in these materials. Optical pump-probe reflection spectroscopy corroborates these results and shows how these large polaronic distortions transiently modify the carrier effective mass, providing a unified picture of the coupled structural and electronic dynamics that underlie the unique optoelectronic functionality of the hybrid perovskites.
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Submitted 5 November, 2020;
originally announced November 2020.
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Coulombically-stabilized oxygen hole polarons enable fully reversible oxygen redox
Authors:
Iwnetim I. Abate,
C. Das Pemmaraju,
Se Young Kim,
Kuan H. Hsu,
Sami Sainio,
Brian Moritz,
John Vinson,
Michael F. Toney,
Wanli Yang,
William E. Gent,
Thomas P. Devereaux,
Linda F. Nazar,
William C. Chueh
Abstract:
Stabilizing high-valent redox couples and exotic electronic states necessitate an understanding of the stabilization mechanism. In oxides, whether they are being considered for energy storage or computing, highly oxidized oxide-anion species rehybridize to form short covalent bonds and are related to significant local structural distortions. In intercalation oxide electrodes for batteries, while s…
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Stabilizing high-valent redox couples and exotic electronic states necessitate an understanding of the stabilization mechanism. In oxides, whether they are being considered for energy storage or computing, highly oxidized oxide-anion species rehybridize to form short covalent bonds and are related to significant local structural distortions. In intercalation oxide electrodes for batteries, while such reorganization partially stabilizes oxygen redox, it also gives rise to substantial hysteresis. In this work, we investigate oxygen redox in layered Na2-XMn3O7, a positive electrode material with ordered Mn vacancies. We show that coulombic interactions between oxidized oxide-anions and the interlayer Na vacancies can disfavor rehybridization and stabilize hole polarons on oxygen at 4.2 V vs. Na/Na+. These coulombic interactions provide thermodynamic energy saving as large as O-O covalent bonding and enable ~ 40 mV voltage hysteresis over multiple electrochemical cycles with negligible voltage fade. Our results establish a complete picture of redox energetics by highlighting the role of coulombic interactions across several atomic distances and suggest avenues to stabilize highly oxidized oxygen for applications in energy storage and beyond.
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Submitted 25 October, 2020;
originally announced October 2020.
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Understanding Cu Incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ Structure using Resonant X-ray Diffraction
Authors:
Ben L. Levy-Wendt,
Brenden R. Ortiz,
Lìdia C. Gomes,
Kevin H. Stone,
Donata Passarello,
Elif Ertekin,
Eric S. Toberer,
Michael F. Toney
Abstract:
The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crysta…
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The ability to control carrier concentration based on the extent of Cu solubility in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy compound (where 0 $\leq$ x $\leq$ 1) makes $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ an interesting case study in the field of thermoelectrics. While Cu clearly plays a role in this process, it is unknown exactly how Cu incorporates into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ crystal structure and how this affects the carrier concentration. In this work, we use a combination of resonant energy X-ray diffraction (REXD) experiments and density functional theory (DFT) calculations to elucidate the nature of Cu incorporation into the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ structure. REXD across the $\mathrm{Cu_k}$ edge facilitates the characterization of Cu incorporation in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy and enables direct quantification of anti-site defects. We find that Cu substitutes for Hg at a 2:1 ratio, wherein Cu annihilates a vacancy and swaps with a Hg atom. DFT calculations confirm this result and further reveal that the incorporation of Cu occurs preferentially on one of the z = 1/4 or z = 3/4 planes before filling the other plane. Furthermore, the amount of $\mathrm{Cu_{Hg}}$ anti-site defects quantified by REXD was found to be directly proportional to the experimentally measured hole concentration, indicating that the $\mathrm{Cu_{Hg}}$ defects are the driving force for tuning carrier concentration in the $\mathrm{Cu_{2x}Hg_{2-x}GeTe_4}$ alloy. The link uncovered here between crystal structure, or more specifically anti-site defects, and carrier concentration can be extended to similar cation-disordered material systems and will aid the development of improved thermoelectric and other functional materials through defect engineering.
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Submitted 9 October, 2020;
originally announced October 2020.
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Uncovering the Effects of Metal Contacts on Monolayer MoS2
Authors:
Kirstin Schauble,
Dante Zakhidov,
Eilam Yalon,
Sanchit Deshmukh,
Ryan W. Grady,
Kayla A. Cooley,
Connor J. McClellan,
Sam Vaziri,
Donata Passarello,
Suzanne E. Mohney,
Michael F. Toney,
A. K. Sood,
Alberto Salleo,
Eric Pop
Abstract:
Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS2 and study the interfaces by Raman spectroscopy…
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Metal contacts are a key limiter to the electronic performance of two-dimensional (2D) semiconductor devices. Here we present a comprehensive study of contact interfaces between seven metals (Y, Sc, Ag, Al, Ti, Au, Ni, with work functions from 3.1 to 5.2 eV) and monolayer MoS2 grown by chemical vapor deposition. We evaporate thin metal films onto MoS2 and study the interfaces by Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction, transmission electron microscopy, and electrical characterization. We uncover that, 1) ultrathin oxidized Al dopes MoS2 n-type (> 2x10^12 1/cm^2) without degrading its mobility, 2) Ag, Au, and Ni deposition causes varying levels of damage to MoS2 (broadening Raman E' peak from <3 1/cm to >6 1/cm), and 3) Ti, Sc, and Y react with MoS2. Reactive metals must be avoided in contacts to monolayer MoS2, but control studies reveal the reaction is mostly limited to the top layer of multilayer films. Finally, we find that 4) thin metals do not significantly strain MoS2, as confirmed by X-ray diffraction. These are important findings for metal contacts to MoS2, and broadly applicable to many other 2D semiconductors.
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Submitted 28 July, 2020;
originally announced July 2020.
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On the question of dynamic domains and critical scattering in cubic methylammonium lead triiodide
Authors:
Nicholas J. Weadock,
Peter M. Gehring,
Aryeh Gold-Parker,
Ian C. Smith,
Hemamala I. Karunadasa,
Michael F. Toney
Abstract:
We investigate the hypothesis of dynamic tetragonal domains occuring in cubic CH$_3$NH$_3$PbI$_3$ using high-resolution neutron spectroscopy to study a fully deuterated single crystal. The $\textit{R}$-point scattering above the 327.5 K tetragonal-cubic phase transition is always resolution-limited in energy and therefore inconsistent with dynamic domain predictions. This behavior is instead consi…
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We investigate the hypothesis of dynamic tetragonal domains occuring in cubic CH$_3$NH$_3$PbI$_3$ using high-resolution neutron spectroscopy to study a fully deuterated single crystal. The $\textit{R}$-point scattering above the 327.5 K tetragonal-cubic phase transition is always resolution-limited in energy and therefore inconsistent with dynamic domain predictions. This behavior is instead consistent with the central peak phenomenon observed in other perovskites. The scattering may originate from small, static, tetragonal-phase domains nucleating about crystal defects, and the temperature dependence demonstrates the transition is first-order.
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Submitted 18 May, 2020;
originally announced May 2020.
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A Map of the Inorganic Ternary Metal Nitrides
Authors:
Wenhao Sun,
Christopher Bartel,
Elisabetta Arca,
Sage Bauers,
Bethany Matthews,
Bernardo Orvañanos,
Bor-Rong Chen,
Michael F. Toney,
Laura T. Schelhas,
William Tumas,
Janet Tate,
Andriy Zakutayev,
Stephan Lany,
Aaron Holder,
Gerbrand Ceder
Abstract:
Exploratory synthesis in novel chemical spaces is the essence of solid-state chemistry. However, uncharted chemical spaces can be difficult to navigate, especially when materials synthesis is challenging. Nitrides represent one such space, where stringent synthesis constraints have limited the exploration of this important class of functional materials. Here, we employ a suite of computational mat…
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Exploratory synthesis in novel chemical spaces is the essence of solid-state chemistry. However, uncharted chemical spaces can be difficult to navigate, especially when materials synthesis is challenging. Nitrides represent one such space, where stringent synthesis constraints have limited the exploration of this important class of functional materials. Here, we employ a suite of computational materials discovery and informatics tools to construct a large stability map of the inorganic ternary metal nitrides. Our map clusters the ternary nitrides into chemical families with distinct stability and metastability, and highlights hundreds of promising new ternary nitride spaces for experimental investigation--from which we experimentally realized 7 new Zn- and Mg-based ternary nitrides. By extracting the mixed metallicity, ionicity, and covalency of solid-state bonding from the DFT-computed electron density, we reveal the complex interplay between chemistry, composition, and electronic structure in governing large-scale stability trends in ternary nitride materials.
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Submitted 24 September, 2018;
originally announced September 2018.
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Acoustic Phonon Lifetimes Limit Thermal Transport in Methylammonium Lead Iodide
Authors:
Aryeh Gold-Parker,
Peter M. Gehring,
Jonathan M. Skelton,
Ian C. Smith,
Dan Parshall,
Jarvist M. Frost,
Hemamala I. Karunadasa,
Aron Walsh,
Michael F. Toney
Abstract:
Hybrid organic-inorganic perovskites (HOIPs) have become an important class of semiconductors for solar cells and other optoelectronic applications. Electron-phonon coupling plays a critical role in all optoelectronic devices, and although the lattice dynamics and phonon frequencies of HOIPs have been well studied, little attention has been given to phonon lifetimes. We report the first high-preci…
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Hybrid organic-inorganic perovskites (HOIPs) have become an important class of semiconductors for solar cells and other optoelectronic applications. Electron-phonon coupling plays a critical role in all optoelectronic devices, and although the lattice dynamics and phonon frequencies of HOIPs have been well studied, little attention has been given to phonon lifetimes. We report the first high-precision measurements of acoustic phonon lifetimes in the hybrid perovskite methylammonium lead iodide (MAPI), using inelastic neutron spectroscopy to provide high energy resolution and fully deuterated single crystals to reduce incoherent scattering from hydrogen. Our measurements reveal extremely short lifetimes on the order of picoseconds, corresponding to nanometer mean free paths and demonstrating that acoustic phonons are unable to dissipate heat efficiently. Lattice-dynamics calculations using ab-initio third-order perturbation theory indicate that the short lifetimes stem from strong three-phonon interactions and a high density of low-energy optical phonon modes related to the degrees of freedom of the organic cation. Such short lifetimes have significant implications for electron-phonon coupling in MAPI and other HOIPs, with direct impacts on optoelectronic devices both in the cooling of hot carriers and in the transport and recombination of band edge carriers. These findings illustrate a fundamental difference between HOIPs and conventional photovoltaic semiconductors and demonstrate the importance of understanding lattice dynamics in the effort to develop metal halide perovskite optoelectronic devices.
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Submitted 17 July, 2018;
originally announced July 2018.
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Crystal truncation rods from miscut surfaces
Authors:
Trevor A Petach,
Apurva Mehta,
Michael F Toney,
David Goldhaber-Gordon
Abstract:
Crystal truncation rods are used to study surface and interface structure. Since real surfaces are always somewhat miscut from a low index plane, it is important to study the effect of miscut on crystal truncation rods. We develop a model that describes the truncation rod scattering from miscut surfaces that have steps and terraces. We show that non-uniform terrace widths and jagged step edges are…
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Crystal truncation rods are used to study surface and interface structure. Since real surfaces are always somewhat miscut from a low index plane, it is important to study the effect of miscut on crystal truncation rods. We develop a model that describes the truncation rod scattering from miscut surfaces that have steps and terraces. We show that non-uniform terrace widths and jagged step edges are both forms of roughness that decrease the intensity of the rods. Non-uniform terrace widths also result in a broad peak that overlaps the rods. We use our model to characterize the terrace width distribution and step edge jaggedness on three SrTiO$_3$ (001) samples, showing excellent agreement between the model and the data, confirmed by atomic force micrographs of the surface morphology. We expect our description of terrace roughness will apply to many surfaces, even those without obvious terracing.
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Submitted 1 June, 2017;
originally announced June 2017.
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Voltage Controlled Interfacial Layering in an Ionic Liquid on SrTiO$_3$
Authors:
Trevor A Petach,
Apurva Mehta,
Ronald Marks,
Bart Johnson,
Michael F Toney,
David Goldhaber-Gordon
Abstract:
One prominent structural feature of ionic liquids near surfaces is formation of alternating layers of anions and cations. However, how this layering responds to applied potential is poorly understood. We focus on the structure of 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl) trifluorophosphate (BMPY-FAP) near the surface of a strontium titanate (SrTiO$_3$) electric double-layer transistor.…
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One prominent structural feature of ionic liquids near surfaces is formation of alternating layers of anions and cations. However, how this layering responds to applied potential is poorly understood. We focus on the structure of 1-butyl-1-methylpyrrolidinium tris(pentafluoroethyl) trifluorophosphate (BMPY-FAP) near the surface of a strontium titanate (SrTiO$_3$) electric double-layer transistor. Using x-ray reflectivity, we show that at positive bias, the individual layers in the ionic liquid double layer thicken and the layering persists further away from the interface. We model the reflectivity using a modified distorted crystal model with alternating cation and anion layers, which allows us to extract the charge density and the potential near the surface. We find that the charge density is strongly oscillatory with and without applied potential, and that with applied gate bias of 4.5 V the first two layers become significantly more cation rich than at zero bias, accumulating about $2.5 \times 10^{13}$ cm$^{-2}$ excess charge density.
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Submitted 27 March, 2016;
originally announced March 2016.
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Device-scale perpendicular alignment of colloidal nanorods
Authors:
Jessy L Baker,
Asaph Widmer-Cooper,
Michael F Toney,
Phillip L Geissler,
A Paul Alivisatos
Abstract:
The self-assembly of nanocrystals enables new classes of materials whose properties are controlled by the periodicities of the assembly, as well as by the size, shape and composition of the nanocrystals. While self-assembly of spherical nanoparticles has advanced significantly in the last decade, assembly of rod-shaped nanocrystals has seen limited progress due to the requirement of orientational…
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The self-assembly of nanocrystals enables new classes of materials whose properties are controlled by the periodicities of the assembly, as well as by the size, shape and composition of the nanocrystals. While self-assembly of spherical nanoparticles has advanced significantly in the last decade, assembly of rod-shaped nanocrystals has seen limited progress due to the requirement of orientational order. Here, the parameters critically relevant to self-assembly are systematically quantified using a combination of diffraction and theoretical modeling; these highlight the importance of kinetics on orientational order. Through drying-mediated self-assembly we achieve unprecedented control over orientational order (up to 96% vertically oriented rods on 1cm2 areas) on a wide range of substrates (ITO, PEDOT:PSS, Si3N4). This opens new avenues for nanocrystal-based devices competitive with thin film devices, as problems of granularity can be tackled through crystallographic orientational control over macroscopic areas.
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Submitted 19 February, 2014;
originally announced February 2014.
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Structural origin of gap states in semicrystalline polymers and the implications for charge transport
Authors:
Jonathan Rivnay,
Rodrigo Noriega,
John E. Northrup,
R. Joseph Kline,
Michael F. Toney,
Alberto Salleo
Abstract:
We quantify the degree of disorder in the π-π stacking direction of crystallites of a high performing semicrystalline semiconducting polymer with advanced X-ray lineshape analysis. Using first principles calculations, we obtain the density of states of a system of π-π stacked polymer chains with increasing amounts of paracrystalline disorder. We find that for an aligned film of PBTTT the paracryst…
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We quantify the degree of disorder in the π-π stacking direction of crystallites of a high performing semicrystalline semiconducting polymer with advanced X-ray lineshape analysis. Using first principles calculations, we obtain the density of states of a system of π-π stacked polymer chains with increasing amounts of paracrystalline disorder. We find that for an aligned film of PBTTT the paracrystalline disorder is 7.3%. This type of disorder induces a tail of trap states with a breadth of ~100 meV as determined through calculation. This finding agrees with previous device modeling and provides physical justification for the mobility edge model.
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Submitted 11 January, 2011; v1 submitted 10 December, 2010;
originally announced December 2010.
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A neutron scattering study of the interplay between structure and magnetism in Ba(Fe$_{1-x}$Co$_{x}$)$_2$As$_2$
Authors:
C. Lester,
Jiun-Haw Chu,
J. G. Analytis,
S. Capelli,
A. S. Erickson,
C. L. Condron,
M. F. Toney,
I. R. Fisher,
S. M. Hayden
Abstract:
Single crystal neutron diffraction is used to investigate the magnetic and structural phase diagram of the electron doped superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. Heat capacity and resistivity measurements have demonstrated that Co doping this system splits the combined antiferromagnetic and structural transition present in BaFe$_2$As$_2$ into two distinct transitions. For $x$=0.025, we fi…
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Single crystal neutron diffraction is used to investigate the magnetic and structural phase diagram of the electron doped superconductor Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. Heat capacity and resistivity measurements have demonstrated that Co doping this system splits the combined antiferromagnetic and structural transition present in BaFe$_2$As$_2$ into two distinct transitions. For $x$=0.025, we find that the upper transition is between the high-temperature tetragonal and low-temperature orthorhombic structures with ($T_{\mathrm{TO}}=99 \pm 0.5$ K) and the antiferromagnetic transition occurs at $T_{\mathrm{AF}}=93 \pm 0.5$ K. We find that doping rapidly suppresses the antiferromagnetism, with antiferromagnetic order disappearing at $x \approx 0.055$. However, there is a region of co-existence of antiferromagnetism and superconductivity. The effect of the antiferromagnetic transition can be seen in the temperature dependence of the structural Bragg peaks from both neutron scattering and x-ray diffraction. We infer from this that there is strong coupling between the antiferromagnetism and the crystal lattice.
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Submitted 20 March, 2009;
originally announced March 2009.
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Pressure-induced quenching of the charge-density-wave state observed by x-ray diffraction
Authors:
A. Sacchetti,
C. L. Condron,
S. N. Gvasaliya,
F. Pfuner,
M. Lavagnini,
M. Baldini,
M. F. Toney,
M. Merlini,
M. Hanfland,
J. Mesot,
J. -H. Chu,
I. R. Fisher,
P. Postorino,
L. Degiorgi
Abstract:
We report an x-ray diffraction study on the charge-density-wave (CDW) LaTe$_3$ and CeTe$_3$ compounds as a function of pressure. We extract the lattice constants and the CDW modulation wave-vector, and provide direct evidence for a pressure-induced quenching of the CDW phase. We observe subtle differences between the chemical and mechanical compression of the lattice. We account for these with a…
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We report an x-ray diffraction study on the charge-density-wave (CDW) LaTe$_3$ and CeTe$_3$ compounds as a function of pressure. We extract the lattice constants and the CDW modulation wave-vector, and provide direct evidence for a pressure-induced quenching of the CDW phase. We observe subtle differences between the chemical and mechanical compression of the lattice. We account for these with a scenario where the effective dimensionality in these CDW systems is dependent on the type of lattice compression and has a direct impact on the degree of Fermi surface nesting and on the strength of fluctuation effects.
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Submitted 3 November, 2008;
originally announced November 2008.
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Enhanced superconducting pairing interaction in indium-doped tin telluride
Authors:
A. S. Erickson,
J. -H. Chu,
M. F. Toney,
T. H. Geballe,
I. R. Fisher
Abstract:
The ferroelectric degenerate semiconductor Sn$_{1-δ}$Te exhibits superconductivity with critical temperatures, $T_c$, of up to 0.3 K for hole densities of order 10$^{21}$ cm$^{-3}$. When doped on the tin site with greater than $x_c$ $= 1.7(3)%$ indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data s…
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The ferroelectric degenerate semiconductor Sn$_{1-δ}$Te exhibits superconductivity with critical temperatures, $T_c$, of up to 0.3 K for hole densities of order 10$^{21}$ cm$^{-3}$. When doped on the tin site with greater than $x_c$ $= 1.7(3)%$ indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for $x > x_c$ than for $x < x_c$. By examining the effect of In dopant atoms on both $T_c$ and the temperature of the ferroelectric structural phase transition, $T_{SPT}$, we show that phonon modes related to this transition are not responsible for this $T_c$ enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.
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Submitted 4 September, 2008;
originally announced September 2008.
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Multiple charge density wave transitions in Gd$_2$Te$_5$
Authors:
K. Y. Shin,
N. Ru,
C. L. Condron,
Y. Q. Wu,
M. J. Kramer,
M. F. Toney,
I. R. Fisher
Abstract:
Diffraction measurements performed via transmission electron microscopy and high resolution X-ray scattering reveal two distinct charge density wave transitions in Gd$_2$Te$_5$ at $T_{c1}$ = 410(3) and $T_{c2}$ = 532(3) K, associated with the \textit{on}-axis incommensurate lattice modulation and \textit{off}-axis commensurate lattice modulation respectively. Analysis of the temperature dependen…
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Diffraction measurements performed via transmission electron microscopy and high resolution X-ray scattering reveal two distinct charge density wave transitions in Gd$_2$Te$_5$ at $T_{c1}$ = 410(3) and $T_{c2}$ = 532(3) K, associated with the \textit{on}-axis incommensurate lattice modulation and \textit{off}-axis commensurate lattice modulation respectively. Analysis of the temperature dependence of the order parameters indicates a non-vanishing coupling between these two distinct CDW states.
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Submitted 15 August, 2008;
originally announced August 2008.
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Charge density wave formation in $R_{2}$Te$_{5}$ ($R$=Nd, Sm and Gd)
Authors:
K. Y. Shin,
J. Laverock,
Y. Q. Wu,
C. L. Condron,
M. F. Toney,
S. B. Dugdale,
M. J. Kramer,
I. R. Fisher
Abstract:
The rare earth ($R$) tellurides $R_2$Te$_5$ have a crystal structure intermediate between that of $R$Te$_2$ and $R$Te$_3$, consisting of alternating single and double Te planes sandwiched between $R$Te block layers. We have successfully grown single crystals of Nd$_2$Te$_5$, Sm$_2$Te$_5$ and Gd$_2$Te$_5$ from a self flux, and describe here the first evidence for charge density wave formation in…
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The rare earth ($R$) tellurides $R_2$Te$_5$ have a crystal structure intermediate between that of $R$Te$_2$ and $R$Te$_3$, consisting of alternating single and double Te planes sandwiched between $R$Te block layers. We have successfully grown single crystals of Nd$_2$Te$_5$, Sm$_2$Te$_5$ and Gd$_2$Te$_5$ from a self flux, and describe here the first evidence for charge density wave formation in these materials. The superlattice patterns for all three compounds are relatively complex, consisting at room temperature of at least two independent wavevectors. Consideration of the electronic structure indicates that to a large extent these wave vectors are separately associated with sheets of the Fermi surface which are principally derived from the single and double Te layers.
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Submitted 12 December, 2007;
originally announced December 2007.
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Effect of Chemical Pressure on the Charge Density Wave Transition in Rare-earth Tritellurides RTe_3
Authors:
N. Ru,
C. L. Condron,
G. Y. Margulis,
K. Y. Shin,
J. Laverock,
S. B. Dugdale,
M. F. Toney,
I. R. Fisher
Abstract:
The charge density wave transition is investigated in the bi-layer family of rare earth tritelluride RTe_3 compounds (R = Sm, Gd, Tb, Dy, Ho, Er, Tm) via high resolution x-ray diffraction and electrical resistivity. The transition temperature increases monotonically with increasing lattice parameter from 244(3) K for TmTe_3 to 416(3) K for SmTe_3. The heaviest members of the series, R = Dy, Ho,…
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The charge density wave transition is investigated in the bi-layer family of rare earth tritelluride RTe_3 compounds (R = Sm, Gd, Tb, Dy, Ho, Er, Tm) via high resolution x-ray diffraction and electrical resistivity. The transition temperature increases monotonically with increasing lattice parameter from 244(3) K for TmTe_3 to 416(3) K for SmTe_3. The heaviest members of the series, R = Dy, Ho, Er, Tm, are observed to have a second transition at a lower temperature, which marks the onset of an additional CDW with wavevector almost equal in magnitude to the first, but oriented in the perpendicular direction.
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Submitted 9 October, 2007; v1 submitted 11 October, 2006;
originally announced October 2006.
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Dopants, Defects and Magnetism in Epitaxial CoxTi1-xO2-x Anatase
Authors:
S. A. Chambers,
S. M. Heald,
R. F. C. Farrow,
J. -U. Thiele,
R. F. Marks,
M. F. Toney,
A. Chattopadhyay
Abstract:
We demonstrate that room-temperature ferromagnetism in epitaxial Co-doped TiO2 anatase is driven by electron-mediated exchange interaction, and not by metallic Co clusters. Co(II) substitutes for Ti(VI) in the lattice and produces oxygen vacancies that do not contribute carriers. Free electrons originate with oxygen vacancies resulting from an oxygen deficiency during growth.
We demonstrate that room-temperature ferromagnetism in epitaxial Co-doped TiO2 anatase is driven by electron-mediated exchange interaction, and not by metallic Co clusters. Co(II) substitutes for Ti(VI) in the lattice and produces oxygen vacancies that do not contribute carriers. Free electrons originate with oxygen vacancies resulting from an oxygen deficiency during growth.
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Submitted 15 August, 2002;
originally announced August 2002.
