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Anomalous scattering in superconducting indium-doped tin telluride
Authors:
A. S. Erickson,
T. H. Geballe,
I. R. Fisher,
Y. Q. Wu,
M. J. Kramer
Abstract:
Results of resistivity, Hall effect, magnetoresistance, susceptibility and heat capacity measurements are presented for single crystals of indium-doped tin telluride with compositions Sn$_{.988-x}$In$_x$Te where $0 \leq x \leq 8.4 %$, along with microstructural analysis based on transmission electron microscopy. For small indium concentrations, $x \leq 0.9 %$ the material does not superconduct abo…
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Results of resistivity, Hall effect, magnetoresistance, susceptibility and heat capacity measurements are presented for single crystals of indium-doped tin telluride with compositions Sn$_{.988-x}$In$_x$Te where $0 \leq x \leq 8.4 %$, along with microstructural analysis based on transmission electron microscopy. For small indium concentrations, $x \leq 0.9 %$ the material does not superconduct above 0.3 K, and the transport properties are consistent with simple metallic behavior. For $x \geq 2.7 %$ the material exhibits anomalous low temperature scattering and for $x \geq 6.1 %$ bulk superconductivity is observed with critical temperatures close to 2 K. Intermediate indium concentrations $2.7% \leq x \leq 3.8%$ do not exhibit bulk superconductivity above 0.7 K. Susceptibility data indicate the absence of magnetic impurities, while magnetoresistance data are inconsistent with localization effects, leading to the conclusion that indium-doped SnTe is a candidate charge Kondo system, similar to thallium-doped PbTe.
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Submitted 1 September, 2010;
originally announced September 2010.
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Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
Authors:
T. Shen,
J. J. Gu,
M. Xu,
Y. Q. Wu,
M. L. Bolen,
M. A. Capano,
L. W. Engel,
P. D. Ye
Abstract:
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack f…
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Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance of gated epitaxial graphene on SiC (0001).
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Submitted 29 October, 2009; v1 submitted 26 August, 2009;
originally announced August 2009.
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Multiple charge density wave transitions in Gd$_2$Te$_5$
Authors:
K. Y. Shin,
N. Ru,
C. L. Condron,
Y. Q. Wu,
M. J. Kramer,
M. F. Toney,
I. R. Fisher
Abstract:
Diffraction measurements performed via transmission electron microscopy and high resolution X-ray scattering reveal two distinct charge density wave transitions in Gd$_2$Te$_5$ at $T_{c1}$ = 410(3) and $T_{c2}$ = 532(3) K, associated with the \textit{on}-axis incommensurate lattice modulation and \textit{off}-axis commensurate lattice modulation respectively. Analysis of the temperature dependen…
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Diffraction measurements performed via transmission electron microscopy and high resolution X-ray scattering reveal two distinct charge density wave transitions in Gd$_2$Te$_5$ at $T_{c1}$ = 410(3) and $T_{c2}$ = 532(3) K, associated with the \textit{on}-axis incommensurate lattice modulation and \textit{off}-axis commensurate lattice modulation respectively. Analysis of the temperature dependence of the order parameters indicates a non-vanishing coupling between these two distinct CDW states.
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Submitted 15 August, 2008;
originally announced August 2008.
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Magneto-conductance Oscillations in Graphene Antidot Arrays
Authors:
T. Shen,
Y. Q. Wu,
M. A. Capano,
L. R. Rokhinson,
L. W. Engel,
P. D. Ye
Abstract:
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conductance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a sin…
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Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been fabricated on these graphene films. At low temperatures, magneto-conductance in these films exhibits pronounced Aharonov-Bohm oscillations with the period corresponding to magnetic flux quanta added to the area of a single antidot. At low fields, weak localization is observed and its visibility is enhanced by intravalley scattering on antidot edges. At high fields, we observe two distinctive minima in magnetoconductance which can be attributed to commensurability oscillations between classical cyclotron orbits and antidot array. All mesoscopic features, surviving up to 70 K, reveal the unique electronic properties of graphene.
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Submitted 9 July, 2008;
originally announced July 2008.
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Top-gated graphene field-effect-transistors formed by decomposition of SiC
Authors:
Y. Q. Wu,
P. D. Ye,
M. A. Capano,
Y. Xuan,
Y. Sui,
M. Qi,
J. A. Cooper
Abstract:
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple gra…
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Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 is used as the gate dielectric. A two-dimensional hexagonal arrangement of carbon atoms with the correct lattice vectors, observed by high-resolution scanning tunneling microscopy, confirms the formation of multiple graphene layers on top of the SiC substrates. The observation of n-type and p-type transition further verifies Dirac Fermions unique transport properties in graphene layers. The measured electron and hole mobility on these fabricated graphene FETs are as high as 5400 cm2/Vs and 4400 cm2/Vs respectively, which are much larger than the corresponding values from conventional SiC or silicon.
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Submitted 27 February, 2008;
originally announced February 2008.
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Charge density wave formation in $R_{2}$Te$_{5}$ ($R$=Nd, Sm and Gd)
Authors:
K. Y. Shin,
J. Laverock,
Y. Q. Wu,
C. L. Condron,
M. F. Toney,
S. B. Dugdale,
M. J. Kramer,
I. R. Fisher
Abstract:
The rare earth ($R$) tellurides $R_2$Te$_5$ have a crystal structure intermediate between that of $R$Te$_2$ and $R$Te$_3$, consisting of alternating single and double Te planes sandwiched between $R$Te block layers. We have successfully grown single crystals of Nd$_2$Te$_5$, Sm$_2$Te$_5$ and Gd$_2$Te$_5$ from a self flux, and describe here the first evidence for charge density wave formation in…
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The rare earth ($R$) tellurides $R_2$Te$_5$ have a crystal structure intermediate between that of $R$Te$_2$ and $R$Te$_3$, consisting of alternating single and double Te planes sandwiched between $R$Te block layers. We have successfully grown single crystals of Nd$_2$Te$_5$, Sm$_2$Te$_5$ and Gd$_2$Te$_5$ from a self flux, and describe here the first evidence for charge density wave formation in these materials. The superlattice patterns for all three compounds are relatively complex, consisting at room temperature of at least two independent wavevectors. Consideration of the electronic structure indicates that to a large extent these wave vectors are separately associated with sheets of the Fermi surface which are principally derived from the single and double Te layers.
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Submitted 12 December, 2007;
originally announced December 2007.
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Superconductivity in MgB_2 doped with Ti and C
Authors:
R. H. T. Wilke,
S. L. Bud'ko,
P. C. Canfield,
M. J. Kramer,
Y. Q. Wu,
D. K. Finnemore,
R. J. Suplinskas,
J. V. Marzik,
S. T. Hannahs
Abstract:
Measurements of the superconducting upper critical field, H_{c2}, and critical current density, J_c, have been carried out for MgB_2 doped with Ti and/or C in order to explore the problems encountered if these dopants are used to enhance the superconducting performance. Carbon replaces boron in the MgB_2 lattice and apparently shortens the electronic mean free path thereby raising H_c2. Titanium…
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Measurements of the superconducting upper critical field, H_{c2}, and critical current density, J_c, have been carried out for MgB_2 doped with Ti and/or C in order to explore the problems encountered if these dopants are used to enhance the superconducting performance. Carbon replaces boron in the MgB_2 lattice and apparently shortens the electronic mean free path thereby raising H_c2. Titanium forms precipitates of either TiB or TiB_2 that enhance the flux pinning and raise J_c. Most of these precipitates are intra-granular in the MgB_2 phase. If approximately 0.5% Ti and approximately 2% C are co-deposited with B to form doped boron fibers and these fibers are in turn reacted in Mg vapor to form MgB_2, the resulting superconductor has H_{c2}(T=0) ~ 25 T and J_c ~ 10,000 A/cm**2 at 5 K and 2.2 T.
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Submitted 22 November, 2004;
originally announced November 2004.
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Anomalous temperature-dependent transport in YbNi2B2C and its correlation to microstructural features
Authors:
M. A. Avila,
Y. Q. Wu,
C. L. Condron,
S. L. Bud'ko,
M. Kramer,
G. J. Miller,
P. C. Canfield
Abstract:
We address the nature of the ligandal disorder leading to local redistributions of Kondo temperatures, manifested as annealing-induced changes in the transport behavior of the heavy fermion system YbNi2B2C. The anomalous transport behavior was fully characterized by temperature dependent resistivity measurements in an extended range of 0.4 < T < 1000 K for as-grown and optimally annealed single…
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We address the nature of the ligandal disorder leading to local redistributions of Kondo temperatures, manifested as annealing-induced changes in the transport behavior of the heavy fermion system YbNi2B2C. The anomalous transport behavior was fully characterized by temperature dependent resistivity measurements in an extended range of 0.4 < T < 1000 K for as-grown and optimally annealed single crystals, and microstructural changes between these two types of samples were investigated by single-crystal x-ray diffraction and transmission electron microscopy. Our results point to lattice dislocations as the most likely candidate to be affecting the surrounding Yb ions, leading to a distribution of Kondo temperatures. This effect combined with the ability to control defect density with annealing offers the possibility of further understanding of the more general problem of the enhanced sensitivity of hybridized Kondo states to disorder, particularly above the coherence temperature.
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Submitted 29 September, 2003;
originally announced September 2003.
