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Magnetotransport in graphene on silicon side of SiC
Authors:
P. Vasek,
L. Smrcka,
P. Svoboda,
V. Jurka,
M. Orlita,
D. K. Maude,
W. Strupinski,
R. Stepniewski,
R. Yakimova
Abstract:
We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of…
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We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.
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Submitted 24 April, 2013; v1 submitted 2 October, 2012;
originally announced October 2012.
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Systematic study of Mn-doping trends in optical properties of (Ga,Mn)As
Authors:
T. Jungwirth,
P. Horodyska,
N. Tesarova,
P. Nemec,
J. Subrt,
P. Maly,
P. Kuzel,
C. Kadlec,
J. Masek,
I. Nemec,
V. Novak,
K. Olejnik,
Z. Soban,
P. Vasek,
P. Svoboda,
Jairo Sinova
Abstract:
We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga dopings. The growth and post-growth annealing procedures were optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption…
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We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga dopings. The growth and post-growth annealing procedures were optimized for each nominal Mn doping in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-doping. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-doping. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band.
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Submitted 27 July, 2010;
originally announced July 2010.
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Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling
Authors:
L. Smrcka,
N. A. Goncharuk,
P. Svoboda,
P. Vasek,
Yu. Krupko,
W. Wegscheider
Abstract:
We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkab…
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We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkable change of magnetoresistance curves as compared to those measured before illumination. The experimental data along with tight-binding model calculations indicate that the illumination not only enhances the electron concentration but also suppresses the electron tunneling through the barriers.
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Submitted 25 July, 2007;
originally announced July 2007.
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Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices
Authors:
N. A. Goncharuk,
L. Smrcka,
P. Svoboda,
P. Vasek,
J. Kucera,
Yu. Krupko,
W. Wegscheider
Abstract:
The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlatti…
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The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also the coupling among 2D electron layers in neighboring quantum wells has been reduced.
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Submitted 31 May, 2007;
originally announced May 2007.
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Anisotropic Magnetoresistance components in (Ga,Mn)As
Authors:
A. W. Rushforth,
K. Výborný,
C. S. King,
K. W. Edmonds,
R. P. Campion,
C. T. Foxon,
J. Wunderlich,
A. C. Irvine,
P. Vašek,
V. Novák,
K. Olejník,
Jairo Sinova,
T. Jungwirth,
B. L. Gallagher
Abstract:
Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band warping.…
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Our experimental and theoretical study of the non-crystalline and crystalline components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As is aimed at exploring the basic physical aspects of this relativistic transport effect. The non-crystalline AMR reflects anisotropic lifetimes of the holes due to polarized Mn impurities while the crystalline AMR is associated with valence band warping. We find that the sign of the non-crystalline AMR is determined by the form of spin-orbit coupling in the host band and by the relative strengths of the non-magnetic and magnetic contributions to the impurity potential. We develop experimental methods directly yielding the non-crystalline and crystalline AMR components which are then independently analyzed. We report the observation of an AMR dominated by a large uniaxial crystalline component and show that AMR can be modified by local strain relaxation. We discuss generic implications of our experimental and theoretical findings including predictions for non-crystalline AMR sign reversals in dilute moment systems.
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Submitted 6 August, 2007; v1 submitted 15 February, 2007;
originally announced February 2007.
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Scaling of resistivities and guided vortex motion in MgB2 thin films
Authors:
P. Vasek
Abstract:
Longitudinal and transverse voltages have been measured on thin films of MgB2 with different superconducting transition widths. The study has been performed in zero and non-zero external magnetic fields. The non-zero transverse voltage has been observed in close vicinity of the critical temperature in zero external magnetic field, while further away from Tc this voltage becomes zero. In magnetic…
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Longitudinal and transverse voltages have been measured on thin films of MgB2 with different superconducting transition widths. The study has been performed in zero and non-zero external magnetic fields. The non-zero transverse voltage has been observed in close vicinity of the critical temperature in zero external magnetic field, while further away from Tc this voltage becomes zero. In magnetic field it becomes a transverse voltage which is an even function with respect to the direction of the field. The usual Hall voltage starts to appear with increasing magnetic field and in large fields the even voltage disappears and only the Hall voltage is measurable (i.e. the transverse even voltage is suppressed with increasing magnetic field and increasing transport current). New scaling between transverse and longitudinal resistivities has been observed. This correlation is valid not only in the zero magnetic field but also in nonzero magnetic field where transverse even voltage is detected. Several models trying to explain observed results are discussed. The most promising one seems to be guided motion of the vortices, though further theoretical work will be required to confirm this.
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Submitted 31 January, 2007;
originally announced January 2007.
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Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields
Authors:
L. Smrčka,
P. Vašek,
P. Svoboda,
N. A. Goncharuk,
O. Pacherová,
Yu. Krupko,
Y. Sheikin
Abstract:
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to r…
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The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices.
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Submitted 14 October, 2005;
originally announced October 2005.
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Transverse voltage in zero external magnetic fields, its scaling and violation of the time reversal symmetry in MgB2
Authors:
P. Vasek
Abstract:
The longitudinal and transverse voltages (resistances) have been measured for MgB$_2$ in zero external magnetic fields. Samples were prepared in the form of thin film and patterned into the usual Hall bar shape. In close vicinity of the critical temperature T$_c$ non-zero transverse resistance has been observed. Its dependence on the transport current has been also studied. New scaling between t…
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The longitudinal and transverse voltages (resistances) have been measured for MgB$_2$ in zero external magnetic fields. Samples were prepared in the form of thin film and patterned into the usual Hall bar shape. In close vicinity of the critical temperature T$_c$ non-zero transverse resistance has been observed. Its dependence on the transport current has been also studied. New scaling between transverse and longitudinal resistivities has been observed in the form $ρ{_{xy}}\sim dρ{_{xx}}/dT$. Several models for explanation of the observed transverse resistances and breaking of reciprocity theorem are discussed. One of the most promising explanation is based on the idea of time-reversal symmetry violation.
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Submitted 7 October, 2003;
originally announced October 2003.
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Transverse even effect and Hall effect in YBaCuO superconductor
Authors:
I. Janeček,
P. Vašek
Abstract:
The Hall resistance was measured by the van der Pauw method on $YBa_2Cu_3O_x$ samples in magnetic fields up to 5 T. In region from 0 to 0.2 T the part of the resistance due to transversal electric field, which is even in magnetic field has been observed just below the critical temperature. This part is gradually suppressed in higher field. Only the Hall resistance (due to odd transversal voltage…
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The Hall resistance was measured by the van der Pauw method on $YBa_2Cu_3O_x$ samples in magnetic fields up to 5 T. In region from 0 to 0.2 T the part of the resistance due to transversal electric field, which is even in magnetic field has been observed just below the critical temperature. This part is gradually suppressed in higher field. Only the Hall resistance (due to odd transversal voltage) has been observed in magnetic field 5 T. The Hall resistance has a typical temperature dependence with negative minimum below the critical temperature. The anisotropy of the Hall resistivity has been observed in this region. We have also tested the reciprocity theorem which is not valid near critical temperature.
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Submitted 23 June, 2003;
originally announced June 2003.
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Magnetoresistance of Si(001) MOSFETs with high concentration of electrons
Authors:
L. Smrcka,
O. N. Makarovsky,
S. G. Schemenchinskii,
P. Vasek,
V. Jurka
Abstract:
We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlin…
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We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlinear field dependence of the Hall resistance accompany the novel oscillations at high carrier concentrations. The heating of the 2D electron layers leads to suppression of the observed anomalies.
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Submitted 12 June, 2003;
originally announced June 2003.
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In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells
Authors:
Yu. Krupko,
L. Smrcka,
P. Vasek,
P. Svoboda,
M. Cukr,
L. Jansen
Abstract:
We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling thr…
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We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can be further influenced by applying front- or back-gate voltage.
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Submitted 22 September, 2003; v1 submitted 12 June, 2003;
originally announced June 2003.
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Transverse voltages and reciprocity theorem in magnetic fields for high T_c superconductors
Authors:
I. Janeček,
P. Vašek
Abstract:
We have tested four-point methods of the Hall effect measurement on BiSrCaCuO (2223) polycrystal and also the validity of the magnetic field form of the reciprocity theorem. We found that different types of determination of the Hall resistance using various combination of measured resistances provide different value of it. We have separated two parts of the resistance combinations, which are eve…
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We have tested four-point methods of the Hall effect measurement on BiSrCaCuO (2223) polycrystal and also the validity of the magnetic field form of the reciprocity theorem. We found that different types of determination of the Hall resistance using various combination of measured resistances provide different value of it. We have separated two parts of the resistance combinations, which are even and odd in magnetic field, respectively. The odd part, which is equivalent to the Hall effect, is equal for all formulae used. The even part of transverse resistance varies in different formulae. The magnetic field form of the reciprocity theorem is not valid. Models for explanation of this violation are also discussed.
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Submitted 18 November, 2002;
originally announced November 2002.
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Reciprocity theorem in high-temperature superconductors
Authors:
I. Janeček,
P. Vašek
Abstract:
This article is devoted to the problem of the validity of the reciprocity theorem in high-temperature superconductors (HTSC). The violation of the reciprocity theorem in zero external magnetic fields has been studied. Experimental data obtained for two different superconducting materials: BiSrCaCuO and YBaCuO are presented. Results show that the basic form of the reciprocity theorem (without con…
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This article is devoted to the problem of the validity of the reciprocity theorem in high-temperature superconductors (HTSC). The violation of the reciprocity theorem in zero external magnetic fields has been studied. Experimental data obtained for two different superconducting materials: BiSrCaCuO and YBaCuO are presented. Results show that the basic form of the reciprocity theorem (without consideration of any additional anisotropy) is not valid near the critical temperature. We assume that the reciprocity theorem breaking is connected with the existence of an extraordinary transverse electric field originated from additional anisotropy and more general form of the reciprocity relations should be valid. However, the origin of this anisotropy is not clear yet. We suggest that the vortex-antivortex dynamics model taking into account vortex guiding can be responsible for the observed effect. Also the explanation based on weak P and T symmetry breaking in HTSC which is supported by the observation of the spontaneous magnetisation can not be excluded.
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Submitted 12 November, 2002;
originally announced November 2002.
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Mixed state Hall effect in the multiphase superconductors
Authors:
I. Janecek,
P. Vasek
Abstract:
Hall effect below Tc in multiphase superconductors has been studied on Bi-based superconductors. Samples with different relative content of 2212 and 2223 phase have been prepared. The phase content has been verified by X-ray diffraction. Results show that while resistance and ac susceptibility is almost insensitive to the content of 2212 phase, the qualitative behavior of the Hall resistance is…
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Hall effect below Tc in multiphase superconductors has been studied on Bi-based superconductors. Samples with different relative content of 2212 and 2223 phase have been prepared. The phase content has been verified by X-ray diffraction. Results show that while resistance and ac susceptibility is almost insensitive to the content of 2212 phase, the qualitative behavior of the Hall resistance is strongly influenced by the presence of both phases. Theoretical calculation of Hall resistance has been made based on effective medium approximation and compared with experimental results.
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Submitted 15 January, 2002;
originally announced January 2002.
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Transverse voltage in high-Tc superconductors in zero magnetic fields
Authors:
P. Vasek
Abstract:
Longitudinal and transverse voltages have been measured in zero external magnetic fields. In close vicinity of the superconducting transition nonzero transverse voltage has been observed while far away from Tc, both above and below no such voltage has been detected. The value of the transverse resistivity depends on the value of the transport current. Several models have been discussed taking in…
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Longitudinal and transverse voltages have been measured in zero external magnetic fields. In close vicinity of the superconducting transition nonzero transverse voltage has been observed while far away from Tc, both above and below no such voltage has been detected. The value of the transverse resistivity depends on the value of the transport current. Several models have been discussed taking into account also the penetration of self field due to the applied transport current. It seems that observed results can be explained using the Kosterlitz-Thouless model as a result of an unpairing of vortex-antivortex pairs created below Tkt due to fluctuations. At Tkt free vortices and antivortices are created and can contribute to a dissipation of energy. Their movement should also be responsible for the observed nonzero transverse voltage.
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Submitted 20 July, 2001;
originally announced July 2001.
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Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field
Authors:
O. N. Makarovskii,
L. Smrcka,
P. Vasek,
T. Jungwirth,
M. Cukr,
L. Jansen
Abstract:
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. S…
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Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.
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Submitted 18 April, 2000;
originally announced April 2000.
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Hall voltage sign reversal in type II superconductors
Authors:
J. Kolacek,
P. Vasek
Abstract:
The Hall voltage sign reversal is consistently explained by the model in which vortices with the superconducting and normal state charge carriers are regarded as three subsystems mutually connected by interactions. The equations of motion for these three subsystems are solved simultaneously and a new formula for the Hall resistivity is obtained. It is shown that it is possible to explain qualita…
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The Hall voltage sign reversal is consistently explained by the model in which vortices with the superconducting and normal state charge carriers are regarded as three subsystems mutually connected by interactions. The equations of motion for these three subsystems are solved simultaneously and a new formula for the Hall resistivity is obtained. It is shown that it is possible to explain qualitatively experimental data by this model.
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Submitted 21 August, 2000; v1 submitted 16 November, 1998;
originally announced November 1998.
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Cyclotron effective mass of 2D electron layer at GaAs/AlGaAs heterojunction subject to in-plane magnetic fields
Authors:
L. Smrcka,
P. Vasek,
J. Kolacek,
T. Jungwirth,
M. Cukr
Abstract:
We have found that Fermi contours of a two-dimensional electron gas at $\rmGaAs/Al_xGa_{1-x}As$ interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong in-plane magnetic field. The distortion of a Fermi contour manifests itself through an increase of the electron effective cyclotron mass which has been measur…
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We have found that Fermi contours of a two-dimensional electron gas at $\rmGaAs/Al_xGa_{1-x}As$ interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong in-plane magnetic field. The distortion of a Fermi contour manifests itself through an increase of the electron effective cyclotron mass which has been measured by the cyclotron resonance in the far-infrared transmission spectra and by the thermal damping of Shubnikov-de Haas oscillations in tilted magnetic fields with an in-plane component up to 5 T. The observed increase of the cyclotron effective mass reaches almost 5 \% of its zero field value which is in good agreement with results of a self-consistent calculation.
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Submitted 2 June, 1995; v1 submitted 11 April, 1995;
originally announced April 1995.
