Showing 1–38 of 38 results for author: van der Wiel, W G

Efficient charge modulation in ultrathin LaAlO$_3$-SrTiO$_3$ field-effect transistors

Authors: A. E. M. Smink, B. Prabowo, B. Stadhouder, N. Gauquelin, J. Schmitz, H. Hilgenkamp, W. G. van der Wiel

Abstract: At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable transistor operation in locally gated LaAlO$_3$-SrTiO$_3$ field-effect devices of which the LaAlO$_3$ dielectric is only four unit cells thin, the cri… ▽ More At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable transistor operation in locally gated LaAlO$_3$-SrTiO$_3$ field-effect devices of which the LaAlO$_3$ dielectric is only four unit cells thin, the critical thickness for conduction at this interface. This extremely thin dielectric allows a very efficient charge modulation of ${\sim}3.2\times10^{13}$ cm$^{-2}$ within a gate-voltage window of $\pm1$ V, as extracted from capacitance-voltage measurements. These also reveal a large stray capacitance between gate and source, presenting a complication for nanoscale device operation. Despite the small LaAlO$_3$ thickness, we observe a negligible gate leakage current, which we ascribe to the extension of the conducting states into the SrTiO$_3$ substrate. △ Less

Submitted 27 September, 2019; originally announced September 2019.

Comments: 5 pages, 4 figures. The following article has been submitted to Applied Physics Letters

Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction

Authors: Joost Ridderbos, Matthias Brauns, Ang Li, Erik P. A. M. Bakkers, Alexander Brinkman, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect b… ▽ More We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect by showing up to 23 Shapiro steps. We observe multiple Andreev reflections up to the sixth order, indicating that charges can scatter elastically many times inside our junction, and that our interfaces between superconductor and semiconductor are transparent and have low disorder. △ Less

Submitted 20 August, 2019; originally announced August 2019.

Journal ref: Phys. Rev. Materials 3, 084803 (2019)

Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires

Authors: Joost Ridderbos, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Sebastian Kölling, Marcel A. Verheijen, Alexander Brinkman, Wilfred G. van der Wiel, Erik P. A. M. Bakkers, Floris A. Zwanenburg

Abstract: We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at… ▽ More We show a hard induced superconducting gap in a Ge-Si nanowire Josephson transistor up to in-plane magnetic fields of $250$ mT, an important step towards creating and detecting Majorana zero modes in this system. A hard induced gap requires a highly homogeneous tunneling heterointerface between the superconducting contacts and the semiconducting nanowire. This is realized by annealing devices at $180$ $^\circ$C during which aluminium inter-diffuses and replaces the germanium in a section of the nanowire. Next to Al, we find a superconductor with lower critical temperature ($T_\mathrm{C}=0.9$ K) and a higher critical field ($B_\mathrm{C}=0.9-1.2$ T). We can therefore selectively switch either superconductor to the normal state by tuning the temperature and the magnetic field and observe that the additional superconductor induces a proximity supercurrent in the semiconducting part of the nanowire even when the Al is in the normal state. In another device where the diffusion of Al rendered the nanowire completely metallic, a superconductor with a much higher critical temperature ($T_\mathrm{C}=2.9$ K) and critical field ($B_\mathrm{C}=3.4$ T) is found. The small size of diffusion-induced superconductors inside nanowires may be of special interest for applications requiring high magnetic fields in arbitrary direction. △ Less

Submitted 20 December, 2019; v1 submitted 11 July, 2019; originally announced July 2019.

New insights into the electron trapping mechanism in LaAlO_3 / SrTiO3 heterostructures

Authors: Chunhai Yin, Alexander E. M. Smink, Inge Leermakers, Lucas M. K. Tang, Nikita Lebedev, Uli Zeitler, Wilfred G. van der Wiel, Hans Hilgenkamp, Jan Aarts

Abstract: In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an expo… ▽ More In LaAlO3/SrTiO3 heterostructures, a commonly observed but poorly understood phenomenon is that of electron trapping in back-gating experiments. In this work, by combining magnetotransport measurements and self-consistent Schroedinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. We find that the trapped electrons follow an exponentially decaying spatial distribution away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen our conclusion that the thermal escape mechanism is not valid. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO3. Our work indicates that electron trapping is a universal phenomenon in SrTiO3-based two-dimensional electron systems. △ Less

Submitted 20 February, 2019; originally announced February 2019.

Comments: manuscript + supplementary information, 8 pages

Journal ref: Phys. Rev. Lett. 124, 017702 (2020)

Correlation between Superconductivity, Band Filling and Electron Confinement at the LaAlO$_{3}$-SrTiO$_{3}$ Interface

Authors: A. E. M. Smink, M. P. Stehno, J. C. de Boer, A. Brinkman, W. G. van der Wiel, H. Hilgenkamp

Abstract: By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of… ▽ More By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the superconducting critical temperature, implying that the confining potential well has a profound effect on superconductivity. We investigate the origin of this behavior by comparing the gate-dependence of $T_c$ to the corresponding evolution of the band filling with gate voltage. For several backgate voltages, we observe maximum $T_c$ to consistently coincide with a kink in tuning the band filling for high topgate voltage. Self-consistent Schrödinger-Poisson calculations relate this kink to a Lifshitz transition of the second $d_{xy}$ subband. These results establish a major role for confinement-induced subbands in the phase diagram of SrTiO$_3$ surface states, and establish gating as a means to control the relative energy of these states. △ Less

Submitted 24 May, 2018; v1 submitted 9 January, 2018; originally announced January 2018.

Comments: 17 pages, 5 figures

Journal ref: Phys. Rev. B 97, 245113 (2018)

A fabrication guide for planar silicon quantum dot heterostructures

Authors: Paul C. Spruijtenburg, Sergey V. Amitonov, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposi… ▽ More We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires. △ Less

Submitted 3 February, 2018; v1 submitted 26 September, 2017; originally announced September 2017.

Comments: Accepted for publication in Nanotechnology. 31 pages, 12 figures

Depletion-mode Quantum Dots in Intrinsic Silicon

Authors: Sergey V. Amitonov, Paul C. Spruijtenburg, Max W. S. Vervoort, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb osc… ▽ More We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits. △ Less

Submitted 3 February, 2018; v1 submitted 21 September, 2017; originally announced September 2017.

Comments: Accepted to Applied Physics Letters. 5 pages, 3 figures

Passivation and characterization of charge defects in ambipolar silicon quantum dots

Authors: P. C. Spruijtenburg, S. V. Amitonov, F. Mueller, W. G. van der Wiel, F. A. Zwanenburg

Abstract: In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge… ▽ More In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al$_2$O$_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of ~10 meV in both the positive and negative charge state. △ Less

Submitted 22 February, 2017; originally announced February 2017.

Comments: 9 pages, 4 figures, supplementary information

Journal ref: Scientific Reports 6, Article number: 38127 (2016)

Charge transport in nanoscale vertical organic semiconductor pillar devices

Authors: Janine G. E. Wilbers, Bojian Xu, Peter A. Bobbert, Michel P. de Jong, Wilfred G. van der Wiel

Abstract: We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene)(P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to $10^6$ A/m$^2$). Current-voltage data modelin… ▽ More We report charge transport measurements in nanoscale vertical pillar structures incorporating ultrathin layers of the organic semiconductor poly(3-hexylthiophene)(P3HT). P3HT layers with thickness down to 5 nm are gently top-contacted using wedging transfer, yielding highly reproducible, robust nanoscale junctions carrying high current densities (up to $10^6$ A/m$^2$). Current-voltage data modeling demonstrates excellent hole injection. This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation. △ Less

Submitted 13 January, 2017; originally announced January 2017.

Comments: 30 pages, 8 figures, 1 table

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Authors: Matthias Brauns, Joost Ridderbos, Ang Li, Wilfred G. van der Wiel, Erik P. A. M. Bakkers, Floris Zwanenburg

Abstract: We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot… ▽ More We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing. △ Less

Submitted 11 October, 2016; originally announced October 2016.

Journal ref: Applied Physics Letters 109, 143113 (2016)

Gate-tunable band structure of the LaAlO$_3$-SrTiO$_3$ interface

Authors: A. E. M. Smink, J. C. de Boer, M. P. Stehno, A. Brinkman, W. G. van der Wiel, H. Hilgenkamp

Abstract: The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observ… ▽ More The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective band structure of the system. We combine a magnetotransport study on top-gated Hall bars with self-consistent Schrödinger-Poisson calculations and observe a Lifshitz transition at a density of $2.9\times10^{13}$ cm$^{-2}$. Above the transition, the carrier density of one of the conducting bands decreases with increasing gate voltage. This surprising decrease is accurately reproduced in the calculations if electronic correlations are included. These results provide a clear, intuitive picture of the physics governing the electronic structure at complex oxide interfaces. △ Less

Submitted 7 October, 2016; originally announced October 2016.

Comments: 14 pages, 4 figures

Journal ref: Phys. Rev. Lett. 118, 106401 (2017)

Anisotropic Pauli spin blockade in hole quantum dots

Authors: Matthias Brauns, Joost Ridderbos, Ang Li, Erik P. A. M. Bakkers, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signat… ▽ More We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic g-factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1)-singlet and (2,0)-triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits. △ Less

Submitted 30 July, 2016; originally announced August 2016.

Journal ref: Physical Review B, 94(2016), 041411(R)

Geometric reduction of dynamical nonlocality in nanoscale quantum circuits

Authors: E. Strambini, K. S. Makarenko, G. Abulizi, M. P. de Jong, W. G. van der Wiel

Abstract: Nonlocality is a key feature discriminating quantum and classical physics. Quantum-interference phenomena, such as Young's double slit experiment, are one of the clearest manifestations of nonlocality, recently addressed as $dynamical$ to specify its origin in the quantum equations of motion. It is well known that loss of dynamical nonlocality can occur due to (partial) collapse of the wavefunctio… ▽ More Nonlocality is a key feature discriminating quantum and classical physics. Quantum-interference phenomena, such as Young's double slit experiment, are one of the clearest manifestations of nonlocality, recently addressed as $dynamical$ to specify its origin in the quantum equations of motion. It is well known that loss of dynamical nonlocality can occur due to (partial) collapse of the wavefunction due to a measurement, such as which-path detection. However, alternative mechanisms affecting dynamical nonlocality have hardly been considered, although of crucial importance in many schemes for quantum information processing. Here, we present a fundamentally different pathway of losing dynamical nonlocality, demonstrating that the detailed geometry of the detection scheme is crucial to preserve nonlocality. By means of a solid-state quantum-interference experiment we quantify this effect in a diffusive system. We show that interference is not only affected by decoherence, but also by a loss of dynamical nonlocality based on a local reduction of the number of quantum conduction channels of the interferometer. With our measurements and theoretical model we demonstrate that this mechanism is an intrinsic property of quantum dynamics. Understanding the geometrical constraints protecting nonlocality is crucial when designing quantum networks for quantum information processing. △ Less

Submitted 11 December, 2015; originally announced December 2015.

Comments: 5 pages, 3 figures, supplementary informations

Journal ref: Scientific Reports 6, 18827 (2016)

Conductance spectroscopy of a proximity induced superconducting topological insulator

Authors: M. Snelder, M. P. Stehno, A. A. Golubov, C. G. Molenaar, T. Scholten, D. Wu, Y. K. Huang, W. G. van der Wiel, M. S. Golden, A. Brinkman

Abstract: We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting… ▽ More We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN' (S is a superconductor, N a superconducting proximized material and N' is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI. △ Less

Submitted 19 June, 2015; originally announced June 2015.

Josephson supercurrent in a topological insulator without a bulk shunt

Authors: M. Snelder, C. G. Molenaar, Y. Pan, D. Wu, Y. K. Huang, A. de Visser, A. A. Golubov, W. G. van der Wiel, H. Hilgenkamp, M. S. Golden, A. Brinkman

Abstract: A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40… ▽ More A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be neglected at the temperatures where we study the proximity induced superconductivity. We prepared Josephson junctions with widths in the order of 40 nm and lengths in the order of 50 to 80 nm on several Bi1.5Sb0.5Te1.7Se1.3 flakes and measured down to 30 mK. The Fraunhofer patterns unequivocally reveal that the supercurrent is a Josephson supercurrent. The measured critical currents are reproducibly observed on different devices and upon multiple cooldowns, and the critical current dependence on temperature as well as magnetic field can be well explained by diffusive transport models and geometric effects. △ Less

Submitted 30 June, 2014; originally announced June 2014.

Journal ref: Supercond. Sci. Technol. 27 (2014) 104001

Modulation of conductance and superconductivity by top-gating in LaAlO3/SrTiO3 2-dimensional electron systems

Authors: P. D. Eerkes, W. G. van der Wiel, H. Hilgenkamp

Abstract: We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and co… ▽ More We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO3 substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super)-conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO3/SrTiO3 interfaces when no gate voltage is applied. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Printed Circuit Board Metal Powder Filters for Low Electron Temperatures

Authors: Filipp Mueller, Raymond N. Schouten, Matthias Brauns, Tian Gang, Wee Han Lim, Nai Shyan Lai, Andrew S. Dzurak, Wilfred G. van der Wiel, Floris A. Zwanenburg

Abstract: We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuatio… ▽ More We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum dot in a silicon MOSFET structure in a dilution refrigerator. We investigate the attenuation behaviour (10 MHz- 20 GHz) of filter made of four metal powders with a grain size below 50 um. The room-temperature attenuation of a stainless steel powder filter is more than 80 dB at frequencies above 1.5 GHz. In all metal powder filters the attenuation increases with temperature. Compared to classical powder filters, the design presented here is much less laborious to fabricate and specifically the copper powder PCB-filters deliver an equal or even better performance than their classical counterparts. △ Less

Submitted 17 April, 2013; v1 submitted 11 April, 2013; originally announced April 2013.

Comments: 13 pages, 5 figures, accepted for publication in Rev. Sci. Instrum

Journal ref: Rev. Sci. Instrum. 84, 044706 (2013)

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

Authors: P. C. Spruijtenburg, J. Ridderbos, F. Mueller, A. W. Leenstra, M. Brauns, A. A. I. Aarnink, W. G. van der Wiel, F. A. Zwanenburg

Abstract: In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET… ▽ More In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states. △ Less

Submitted 17 April, 2013; v1 submitted 10 April, 2013; originally announced April 2013.

Comments: 4 pages, 4 figures. This article has been submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 102, 192105 (2013)

Spin injection and perpendicular spin transport in graphite nanostructures

Authors: T. Banerjee, W. G. van der Wiel, R. Jansen

Abstract: Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation length is not necessarily large when transport is via weakly interacting molecular orbitals. Here we use graphite as a model system and study spin transport in the… ▽ More Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation length is not necessarily large when transport is via weakly interacting molecular orbitals. Here we use graphite as a model system and study spin transport in the direction perpendicular to the weakly bonded graphene sheets. We achieve injection of highly (75%) spin-polarized electrons into graphite nanostructures of 300-500 nm across and up to 17 nm thick, and observe transport without any measurable loss of spin information. Direct visualization of local spin transport in graphite-based spin-valve sandwiches also shows spatially uniform and near-unity transmission for electrons at 1.8 eV above the Fermi level. △ Less

Submitted 21 May, 2010; originally announced May 2010.

Magnetoresistance oscillations and relaxation effects at the SrTiO3-LaAlO3 interface

Authors: M. van Zalk, J. Huijben, A. J. M. Giesbers, M. Huijben, U. Zeitler, J. C. Maan, W. G. van der Wiel, G. Rijnders, D. H. A. Blank, H. Hilgenkamp, A. Brinkman

Abstract: We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanat… ▽ More We present low-temperature and high-field magnetotransport data on SrTiO3-LaAlO3 interfaces. The resistance shows hysteresis in magnetic field and a logarithmic relaxation as a function of time. Oscillations in the magnetoresistance are observed, showing a square root periodicity in the applied magnetic field, both in large-area unstructured samples as well as in a structured sample. An explanation in terms of a commensurability condition of edge states in a highly mobile two-dimensional electron gas between substrate step edges is suggested. △ Less

Submitted 27 June, 2008; originally announced June 2008.

Organic Spintronics

Authors: W. J. M. Naber, S. Faez, W. G. van der Wiel

Abstract: In this paper we review the recent field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by metals, oxides, or inorganic semiconductors. First, the basic concepts of spintronics and organic electronics are addressed and phenomena which are in particular relevant for… ▽ More In this paper we review the recent field of organic spintronics, where organic materials are applied as a medium to transport and control spin-polarized signals. The contacts for injecting and detecting spins are formed by metals, oxides, or inorganic semiconductors. First, the basic concepts of spintronics and organic electronics are addressed and phenomena which are in particular relevant for organic spintronics are highlighted. Experiments using different organic materials, including carbon nanotubes, organic thin films, self-assembled monolayers and single molecules are then reviewed. Observed magnetoresistance points toward successful spin injection and detection, but spurious magnetoresitance effects can easily be confused with spin accumulation. A few studies report long spin relaxation times and lengths, which forms a promising basis for further research. We conclude with discussing outstanding questions and problems. △ Less

Submitted 19 March, 2007; originally announced March 2007.

Comments: Provisionally accepted for publication in Journal of Physics D: Applied Physics

Journal ref: J. Phys. D: Appl. Phys. 40 (2007) R205-R228

Magnetic effects at the interface between nonmagnetic oxides

Authors: A. Brinkman, M. Huijben, M. van Zalk, J. Huijben, U. Zeitler, J. C. Maan, W. G. van der Wiel, G. Rijnders, D. H. A. Blank, H. Hilgenkamp

Abstract: The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, toget… ▽ More The electronic reconstruction at the interface between two insulating oxides can give rise to a highly-conductive interface. In analogy to this remarkable interface-induced conductivity we show how, additionally, magnetism can be induced at the interface between the otherwise nonmagnetic insulating perovskites SrTiO3 and LaAlO3. A large negative magnetoresistance of the interface is found, together with a logarithmic temperature dependence of the sheet resistance. At low temperatures, the sheet resistance reveals magnetic hysteresis. Magnetic ordering is a key issue in solid-state science and its underlying mechanisms are still the subject of intense research. In particular, the interplay between localized magnetic moments and the spin of itinerant conduction electrons in a solid gives rise to intriguing many-body effects such as Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, the Kondo effect, and carrier-induced ferromagnetism in diluted magnetic semiconductors. The conducting oxide interface now provides a versatile system to induce and manipulate magnetic moments in otherwise nonmagnetic materials. △ Less

Submitted 4 June, 2007; v1 submitted 1 March, 2007; originally announced March 2007.

Comments: Nature Materials, July issue

Surface Acoustic Wave induced Transport in a Double Quantum Dot

Authors: W. J. M. Naber, T. Fujisawa, H. W. Liu, W. G. van der Wiel

Abstract: We report on non-adiabatic transport through a double quantum dot under irradiation of surface acoustic waves generated on-chip. At low excitation powers, absorption and emission of single and multiple phonons is observed. At higher power, sequential phonon assisted tunneling processes excite the double dot in a highly non-equilibrium state. The present system is attractive for studying electron… ▽ More We report on non-adiabatic transport through a double quantum dot under irradiation of surface acoustic waves generated on-chip. At low excitation powers, absorption and emission of single and multiple phonons is observed. At higher power, sequential phonon assisted tunneling processes excite the double dot in a highly non-equilibrium state. The present system is attractive for studying electron-phonon interaction with piezoelectric coupling. △ Less

Submitted 9 January, 2006; originally announced January 2006.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 96, 136807 (2006)

Coherent single electron spin control in a slanting Zeeman field

Authors: Yasuhiro Tokura, Wilfred G. van der Wiel, Toshiaki Obata, Seigo Tarucha

Abstract: We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudo-spin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Si… ▽ More We consider a single electron in a 1D quantum dot with a static slanting Zeeman field. By combining the spin and orbital degrees of freedom of the electron, an effective quantum two-level (qubit) system is defined. This pseudo-spin can be coherently manipulated by the voltage applied to the gate electrodes, without the need for an external time-dependent magnetic field or spin-orbit coupling. Single qubit rotations and the C-NOT operation can be realized. We estimated relaxation ($T_1$) and coherence ($T_{2}$) times, and the (tunable) quality factor. This scheme implies important experimental advantages for single electron spin control. △ Less

Submitted 15 October, 2005; originally announced October 2005.

Comments: 4 pages, 3 figures

Magnetically induced chessboard pattern in the conductance of a Kondo quantum dot

Authors: M. Stopa, W. G. van der Wiel, S. De Franceschi, S. Tarucha, L. P. Kouwenhoven

Abstract: We quantitatively describe the main features of the magnetically induced conductance modulation of a Kondo quantum dot -- or chessboard pattern -- in terms of a constant-interaction double quantum dot model. We show that the analogy with a double dot holds down to remarkably low magnetic fields. The analysis is extended by full 3D spin density functional calculations. Introducing an effective Ko… ▽ More We quantitatively describe the main features of the magnetically induced conductance modulation of a Kondo quantum dot -- or chessboard pattern -- in terms of a constant-interaction double quantum dot model. We show that the analogy with a double dot holds down to remarkably low magnetic fields. The analysis is extended by full 3D spin density functional calculations. Introducing an effective Kondo coupling parameter, the chessboard pattern is self-consistently computed as a function of magnetic field and electron number, which enables us to quantitatively explain our experimental data. △ Less

Submitted 9 May, 2003; originally announced May 2003.

Comments: 4 pages, 3 color figures

Electron transport through double quantum dots

Authors: W. G. van der Wiel, S. De Franceschi, J. M. Elzerman, T. Fujisawa, S. Tarucha, L. P. Kouwenhoven

Abstract: Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show that the double dot geometry allows for an accurate determination of the intrinsic lifetime of discrete energy states in quantum dots. The evolution of discr… ▽ More Electron transport experiments on two lateral quantum dots coupled in series are reviewed. An introduction to the charge stability diagram is given in terms of the electrochemical potentials of both dots. Resonant tunneling experiments show that the double dot geometry allows for an accurate determination of the intrinsic lifetime of discrete energy states in quantum dots. The evolution of discrete energy levels in magnetic field is studied. The resolution allows to resolve avoided crossings in the spectrum of a quantum dot. With microwave spectroscopy it is possible to probe the transition from ionic bonding (for weak inter-dot tunnel coupling) to covalent bonding (for strong inter-dot tunnel coupling) in a double dot artificial molecule. This review on the present experimental status of double quantum dot studies is motivated by their relevance for realizing solid state quantum bits. △ Less

Submitted 21 May, 2002; v1 submitted 16 May, 2002; originally announced May 2002.

Comments: 32 pages, 31 figures

Journal ref: Rev. Mod. Phys. Vol. 75 No. 1, 1-22 (2003).

Kondo effect out of equilibrium in a mesoscopic device

Authors: S. De Franceschi, R. Hanson, W. G. van der Wiel, J. M. Elzerman, J. J. Wijpkema, T. Fujisawa, S. Tarucha, L. P. Kouwenhoven

Abstract: We study the non-equilibrium regime of the Kondo effect in a quantum dot laterally coupled to a narrow wire. We observe a split Kondo resonance when a finite bias voltage is imposed across the wire. The splitting is attributed to the creation of a double-step Fermi distribution function in the wire. Kondo correlations are strongly suppressed when the voltage across the wire exceeds the Kondo tem… ▽ More We study the non-equilibrium regime of the Kondo effect in a quantum dot laterally coupled to a narrow wire. We observe a split Kondo resonance when a finite bias voltage is imposed across the wire. The splitting is attributed to the creation of a double-step Fermi distribution function in the wire. Kondo correlations are strongly suppressed when the voltage across the wire exceeds the Kondo temperature. A perpendicular magnetic field enables us to selectively control the coupling between the dot and the two Fermi seas in the wire. Already at fields of order 0.1 T only the Kondo resonance associated with the strongly coupled reservoir survives. △ Less

Submitted 15 March, 2002; v1 submitted 6 March, 2002; originally announced March 2002.

Two-stage Kondo effect in a quantum dot at high magnetic field

Authors: W. G. van der Wiel, S. De Franceschi, J. M. Elzerman, S. Tarucha, L. P. Kouwenhoven, J. Motohisa, F. Nakajima, T. Fukui

Abstract: We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharp… ▽ More We report a strong Kondo effect (Kondo temperature ~ 4K) at high magnetic field in a selective area growth semiconductor quantum dot. The Kondo effect is ascribed to a singlet-triplet transition in the ground state of the dot. At the transition, the low-temperature conductance approaches the unitary limit. Away from the transition, for low bias voltages and temperatures, the conductance is sharply reduced. The observed behavior is compared to predictions for a two-stage Kondo effect in quantum dots coupled to single-channel leads. △ Less

Submitted 20 October, 2001; originally announced October 2001.

Comments: 4 pages, 5 figures

Journal ref: Phys. Rev. Lett. 88, 126803 (2002).

Electro-magnetic Aharonov-Bohm effect in a 2-D electron gas ring

Authors: W. G. van der Wiel, Yu. V. Nazarov, S. De Franceschi, T. Fujisawa, J. M. Elzerman, E. W. G. M. Huizeling, S. Tarucha, L. P. Kouwenhoven

Abstract: We define a mesoscopic ring in a 2-dimensional electron gas (2DEG) interrupted by two tunnel barriers, enabling us to apply a well-defined potential difference between the two halves of the ring. The electron interference in the ring is modified using a perpendicular magnetic field and a bias voltage. We observe clear Aharonov-Bohm oscillations up to the quantum Hall regime as a function of both… ▽ More We define a mesoscopic ring in a 2-dimensional electron gas (2DEG) interrupted by two tunnel barriers, enabling us to apply a well-defined potential difference between the two halves of the ring. The electron interference in the ring is modified using a perpendicular magnetic field and a bias voltage. We observe clear Aharonov-Bohm oscillations up to the quantum Hall regime as a function of both parameters. The electron travel time between the barriers is found to increase with the applied magnetic field. Introducing a scattering model, we develop a new method to measure the non-equilibrium electron dephasing time, which becomes very short at high voltages and magnetic fields. The relevance of electron-electron interactions is discussed. △ Less

Submitted 23 July, 2001; originally announced July 2001.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 67, 033307 (2003)

The Kondo Effect in the Unitary Limit

Authors: W. G. van der Wiel, S. De Franceschi, T. Fujisawa, J. M. Elzerman, S. Tarucha, L. P. Kouwenhoven

Abstract: We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit value. We compare the experimental Kondo temperature with the theoretical predictions for the spin-1/2 Anderson impurity model. Excellent agreement is found thro… ▽ More We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit value. We compare the experimental Kondo temperature with the theoretical predictions for the spin-1/2 Anderson impurity model. Excellent agreement is found throughout the Kondo regime. Phase coherence is preserved when a Kondo quantum dot is included in one of the arms of an Aharonov-Bohm ring structure and the phase behavior differs from previous results on a non-Kondo dot. △ Less

Submitted 26 September, 2000; originally announced September 2000.

Comments: 10 pages

Journal ref: W.G. van der Wiel et al., Science 289, 2105 (2000)

Electron Cotunneling in a Semiconductor Quantum Dot

Authors: S. De Franceschi, S. Sasaki, J. M. Elzerman, W. G. van der Wiel, S. Tarucha, L. P. Kouwenhoven

Abstract: We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contribution… ▽ More We report transport measurements on a semiconductor quantum dot with a small number of confined electrons. In the Coulomb blockade regime, conduction is dominated by cotunneling processes. These can be either elastic or inelastic, depending on whether they leave the dot in its ground state or drive it into an excited state, respectively. We are able to discriminate between these two contributions and show that inelastic events can occur only if the applied bias exceeds the lowest excitation energy. Implications to energy-level spectroscopy are discussed. △ Less

Submitted 22 November, 2000; v1 submitted 27 July, 2000; originally announced July 2000.

Comments: To be published in Phys. Rev. Lett

Inelastic tunneling in a double quantum dot coupled to a bosonic environment

Authors: Toshimasa Fujisawa, Wilfred G. van der Wiel, Leo P. Kouwenhoven

Abstract: Coupling a quantum system to a bosonic environment always give rise to inelastic processes, which reduce the coherency of the system. We measure energy dependent rates for inelastic tunneling processes in a fully controllable two-level system of a double quantum dot. The emission and absorption rates are well repro-duced by Einstein's coefficients, which relate to the spontaneous emission rate.… ▽ More Coupling a quantum system to a bosonic environment always give rise to inelastic processes, which reduce the coherency of the system. We measure energy dependent rates for inelastic tunneling processes in a fully controllable two-level system of a double quantum dot. The emission and absorption rates are well repro-duced by Einstein's coefficients, which relate to the spontaneous emission rate. The inelastic tunneling rate can be comparable to the elastic tunneling rate if the boson occupation number becomes large. In the specific semiconductor double dot, the energy dependence of the inelastic rate suggests that acoustic phonons are coupled to the double dot piezoelectrically. △ Less

Submitted 11 July, 2000; originally announced July 2000.

Comments: 6 pages, 4 figures

Journal ref: Physica E 7, 413 (2000)

Kondo effect in an integer-spin quantum dot

Authors: S. Sasaki, S. De Franceschi, J. M. Elzerman, W. G. van der Wiel, M. Eto, S. Tarucha, L. P. Kouwenhoven

Abstract: The Kondo effect is a key many-body phenomenon in condensed matter physics. It concerns the interaction between a localised spin and free electrons. Discovered in metals containing small amounts of magnetic impurities, it is now a fundamental mechanism in a wide class of correlated electron systems. Control over single, localised spins has become relevant also in fabricated structures due to the… ▽ More The Kondo effect is a key many-body phenomenon in condensed matter physics. It concerns the interaction between a localised spin and free electrons. Discovered in metals containing small amounts of magnetic impurities, it is now a fundamental mechanism in a wide class of correlated electron systems. Control over single, localised spins has become relevant also in fabricated structures due to the rapid developments in nano-electronics. Experiments have already demonstrated artificial realisations of isolated magnetic impurities at metallic surfaces, nanometer-scale magnets, controlled transitions between two-electron singlet and triplet states, and a tunable Kondo effect in semiconductor quantum dots. Here, we report an unexpected Kondo effect realised in a few-electron quantum dot containing singlet and triplet spin states whose energy difference can be tuned with a magnetic field. This effect occurs for an even number of electrons at the degeneracy between singlet and triplet states. The characteristic energy scale is found to be much larger than for the ordinary spin-1/2 case. △ Less

Submitted 25 April, 2000; originally announced April 2000.

Comments: 12 pages

Direct Coulomb and Exchange Interaction in Artificial Atoms

Authors: S. Tarucha, D. G. Austing, Y. Tokura, W. G. van der Wiel, L. P. Kouwenhoven

Abstract: We determine the contributions from the direct Coulomb and exchange interactions to the total interaction in semiconductor artificial atoms. We tune the relative strengths of the two interactions and measure them as a function of the number of confined electrons. We find that electrons tend to have parallel spins when they occupy nearly degenerate single-particle states. We use a magnetic field… ▽ More We determine the contributions from the direct Coulomb and exchange interactions to the total interaction in semiconductor artificial atoms. We tune the relative strengths of the two interactions and measure them as a function of the number of confined electrons. We find that electrons tend to have parallel spins when they occupy nearly degenerate single-particle states. We use a magnetic field to adjust the single-particle state degeneracy, and find that the spin-configurations in an arbitrary magnetic field are well explained in terms of two-electron singlet and triplet states. △ Less

Submitted 18 January, 2000; originally announced January 2000.

Comments: 4 pages, 5 figures

Suppression of the Kondo Effect in a Quantum Dot by Microwave Radiation

Authors: Jeroen M. Elzerman, Silvano De Franceschi, David Goldhaber-Gordon, Wilfred G. van der Wiel, Leo P. Kouwenhoven

Abstract: We have studied the influence of microwave radiation on the transport properties of a semiconductor quantum dot in the Kondo regime. In the entire frequency range tested (10--50 GHz), the Kondo resonance vanishes by increasing the microwave power. This suppression of the Kondo resonance shows an unexpected scaling behavior. No evidence for photon-sideband formation is found. The comparison with… ▽ More We have studied the influence of microwave radiation on the transport properties of a semiconductor quantum dot in the Kondo regime. In the entire frequency range tested (10--50 GHz), the Kondo resonance vanishes by increasing the microwave power. This suppression of the Kondo resonance shows an unexpected scaling behavior. No evidence for photon-sideband formation is found. The comparison with temperature-dependence measurements indicates that radiation-induced spin dephasing plays an important role in the suppression of the Kondo effect. △ Less

Submitted 7 December, 1999; originally announced December 1999.

Comments: 15 pages

Photon Assisted Tunneling in Quantum Dots

Authors: W. G. van der Wiel, T. H. Oosterkamp, S. De Franceschi, C. J. P. M. Harmans, L. P. Kouwenhoven

Abstract: We review experiments on single electron transport through single quantum dots in the presence of a microwave signal. In the case of a small dot with well-resolved discrete energy states, the applied high-frequency signal allows for inelastic tunnel events that involve the exchange of photons with the microwave field. These photon assisted tunneling (PAT) processes give rise to sideband resonanc… ▽ More We review experiments on single electron transport through single quantum dots in the presence of a microwave signal. In the case of a small dot with well-resolved discrete energy states, the applied high-frequency signal allows for inelastic tunnel events that involve the exchange of photons with the microwave field. These photon assisted tunneling (PAT) processes give rise to sideband resonances in addition to the main resonance. Photon absorption can also lead to tunneling via excited states instead of tunneling via the ground state of the quantum dot. △ Less

Submitted 3 April, 2002; v1 submitted 26 April, 1999; originally announced April 1999.

Microwave spectroscopy on a quantum-dot molecule

Authors: T. H. Oosterkamp, T. Fujisawa, W. G. van der Wiel, K. Ishibashi, R. V. Hijman, S. Tarucha, L. P. Kouwenhoven

Abstract: Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property that they can be connected to current and voltage contacts. This allows one to use transport measurements to probe the discrete energy spectra. To continue th… ▽ More Quantum dots are small conductive regions in a semiconductor, containing a variable number of electrons (N=1 to 1000) that occupy well defined discrete quantum states. They are often referred to as artificial atoms with the unique property that they can be connected to current and voltage contacts. This allows one to use transport measurements to probe the discrete energy spectra. To continue the analogy with atoms, two quantum dots can be connected to form an 'artificial molecule'. Depending on the strength of the inter-dot coupling, the two dots can have an ionic binding (i.e. electrons are localized on the individual dots) or a covalent binding (i.e. electrons are delocalized over both dots). The covalent binding leads to a bonding and an anti-bonding state with an energy splitting proportional to the tunnel coupling. In the dc current response to microwave excitation we observe a transition from an ionic bonding to a covalent bonding, when we vary the inter-dot coupling strength. This demonstrates controllable quantum coherence in single electron devices. △ Less

Submitted 9 September, 1998; originally announced September 1998.

Comments: 5 pages, accepted by Nature

Spontaneous Emission Spectrum in Double Quantum Dot Devices

Authors: T. Fujisawa, T. H. Oosterkamp, W. G. van der Wiel, B. W. Broer, R. Aguado, S. Tarucha, L. P. Kouwenhoven

Abstract: A double quantum dot device is a tunable two-level system for electronic energy states. A dc electron current directly measures the rates for elastic and inelastic transitions between the two levels. For inelastic transitions energy is exchanged with bosonic degrees of freedom in the environment. The inelastic transition rates are well described by the Einstein coefficients, relating absorption… ▽ More A double quantum dot device is a tunable two-level system for electronic energy states. A dc electron current directly measures the rates for elastic and inelastic transitions between the two levels. For inelastic transitions energy is exchanged with bosonic degrees of freedom in the environment. The inelastic transition rates are well described by the Einstein coefficients, relating absorption with stimulated and spontaneous emission. The most effectively coupled bosons in the specific environment of our semiconductor device are acoustic phonons. The experiments demonstrate the importance of vacuum fluctuations in the environment for little circuits of coherent quantum devices. △ Less

Submitted 10 August, 1998; originally announced August 1998.

Comments: 5 pages, 3 figures