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Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime
Authors:
Gareth F. Jones,
Rui M. Pinto,
Adolfo De Sanctis,
V. Karthik Nagareddy,
C. David Wright,
Helena Alves,
Monica F. Craciun,
Saverio Russo
Abstract:
Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have s…
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Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have shown inferior performance compared to inorganic semiconductors. Here, we utilize the long-range order in rubrene single crystals to engineer organic semiconductor-graphene phototransistors surpassing previously reported photo-gating efficiencies by one order of magnitude. Phototransistors based upon these interfaces are spectrally selective to visible wavelengths and, through photoconductive gain mechanisms, achieve responsivity as large as 10^7 A/W and a detectivity of 1.5 10^9 Jones at room temperature. These findings point towards implementing low-cost, flexible materials for amplified imaging at ultra-low light levels.
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Submitted 3 October, 2017; v1 submitted 2 October, 2017;
originally announced October 2017.
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Extraordinary linear dynamic range in laser-defined functionalized graphene photodetectors
Authors:
Adolfo De Sanctis,
Gareth F. Jones,
Dominique J. Wehenkel,
Francisco Bezares,
Frank H. L. Koppens,
Monica F. Craciun,
Saverio Russo
Abstract:
Graphene-based photodetectors have demonstrated mechanical flexibility, large operating bandwidth, and broadband spectral response. However, their linear dynamic range (LDR) is limited by graphene's intrinsichot-carrier dynamics, which causes deviation from a linear photoresponse at low incident powers. At the same time, multiplication of hot carriers causes the photoactive region to be smeared ov…
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Graphene-based photodetectors have demonstrated mechanical flexibility, large operating bandwidth, and broadband spectral response. However, their linear dynamic range (LDR) is limited by graphene's intrinsichot-carrier dynamics, which causes deviation from a linear photoresponse at low incident powers. At the same time, multiplication of hot carriers causes the photoactive region to be smeared over distances of a few micro-meters, limiting the use of graphene in high-resolution applications. We present a novel method for engineer-ing photoactive junctions in FeCl3-intercalated graphene using laser irradiation. Photocurrent measured at these planar junctions shows an extraordinary linear response with an LDR value at least 4500 times larger than that of other graphene devices (44 dB) while maintaining high stability against environmental contamination without the need for encapsulation. The observed photoresponse is purely photovoltaic, demonstrating complete quenching of hot-carrier effects. These results pave the way toward the design of ultrathin photode-tectors with unprecedented LDR for high-definition imaging and sensing.
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Submitted 31 May, 2017;
originally announced June 2017.
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Fast and Highly Sensitive Ionic Polymer Gated WS$_2$-Graphene Photodetectors
Authors:
Jake D. Mehew,
Selim Unal,
Elias Torres Alonso,
Gareth F. Jones,
Saad Fadhil Ramadhan,
Monica F. Craciun,
Saverio Russo
Abstract:
The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited by long-lived charge traps and impractical strategies, e.g. the use of large gate voltage pulses, have been employed to achieve bandwidths suitable for applicat…
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The combination of graphene with semiconductor materials in heterostructure photodetectors, has enabled amplified detection of femtowatt light signals using micron-scale electronic devices. Presently, the speed of such detectors is limited by long-lived charge traps and impractical strategies, e.g. the use of large gate voltage pulses, have been employed to achieve bandwidths suitable for applications, such as video-frame-rate imaging. Here, we report atomically thin graphene-WS$_2$ heterostructure photodetectors encapsulated in an ionic polymer, which are uniquely able to operate at bandwidths up to 1.5 kHz, whilst maintaining internal gain as large as $10^6$. Highly mobile ions and a nanometre scale Debye length of the ionic polymer are used to screen charge traps and tune the Fermi level of graphene over an unprecedented range at the interface with WS$_2$. We observe a responsivity $R=10^6$ A W$^{-1}$ and detectivity $D^*=3.8\times10^{11}$ Jones, approaching that of single photon counters. The combination of both high responsivity and fast response times makes these photodetectors suitable for video-frame-rate imaging applications.
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Submitted 26 April, 2017; v1 submitted 25 April, 2017;
originally announced April 2017.
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An integrated and multi-purpose microscope for the characterization of atomically thin optoelectronic devices
Authors:
Adolfo De Sanctis,
Gareth F. Jones,
Nicola J. Townsend,
Monica F. Craciun,
Saverio Russo
Abstract:
Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and pho…
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Optoelectronic devices based on graphene and other two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs) are the focus of wide research interest. The characterization these emerging atomically thin materials and devices strongly relies on a set of measurements involving both optical and electronic instrumentation ranging from scanning photocurrent mapping to Raman and photoluminescence (PL) spectroscopy. Furthermore, proof-of-concept devices are usually fabricated from micro-meter size flakes, requiring microscopy techniques to characterize them. Current state-of-the-art commercial instruments offer the ability to characterize individual properties of these materials with no option for the in situ characterization of a wide enough range of complementary optical and electrical properties. Presently, the requirement to switch atomically-thin materials from one system to another often radically affects the properties of these uniquely sensitive materials through atmospheric contamination. Here, we present an integrated, multi-purpose instrument dedicated to the optical and electrical characterization of devices based on 2D materials which is able to perform low frequency electrical measurements, scanning photocurrent mapping, Raman, absorption and PL spectroscopy in one single set-up. We characterize this apparatus by performing multiple measurements on graphene, transition metal dichalcogenides (TMDs) and Si. The performance and resolution of each individual measurement technique is found to be equivalent to that of commercially available instruments. Contrary to nowadays commercial systems, a significant advantage of the developed instrument is that for the first time the integration of a wide range of complementary opto-electronic and spectroscopy characterization techniques is demonstrated in a single compact unit.
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Submitted 26 April, 2017; v1 submitted 21 September, 2016;
originally announced September 2016.
