All-Dielectric Silicon/Phase-Change Optical Metasurfaces with Independent and Reconfigurable Control of Resonant Modes
Authors:
Carlota Ruiz de Galarreta,
Ivan Sinev,
Arseny M. Alexeev,
Pavel Trofimov,
Konstantin Ladutenko,
Santiago Garcia-Cuevas Carrillo,
Emanuele Gemo,
Anna Baldycheva,
V. Karthik Nagareddy,
Jacopo Bertolotti,
C. David Wright
Abstract:
All-dielectric metasurfaces consisting of arrays of nanostructured high-refractive-index materials, typically Si, are re-writing what is achievable in terms of the manipulation of light. Such devices support very strong magnetic, as well as electric, resonances, and are free of ohmic losses that severely limit the performance of their plasmonic counterparts. However, the functionality of dielectri…
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All-dielectric metasurfaces consisting of arrays of nanostructured high-refractive-index materials, typically Si, are re-writing what is achievable in terms of the manipulation of light. Such devices support very strong magnetic, as well as electric, resonances, and are free of ohmic losses that severely limit the performance of their plasmonic counterparts. However, the functionality of dielectric-based metasurfaces is fixed-by-design, i.e. the optical response is fixed by the size, arrangement and index of the nanoresonators. A far wider range of applications could be addressed if active/reconfigurable control were possible. We demonstrate this here, via a new hybrid metasurface concept in which active control is achieved by embedding deeply sub-wavelength inclusions of a tuneable chalcogenide phase-change material within the body of high-index Si nanocylinders. Moreover, by strategic placement of the phase-change layer, and switching of its phase-state, we show selective and active control of metasuface resonances. This yields novel functionality, which we showcase via a dual- to mono-band meta-switch operating simultaneously in the O and C telecommunication bands.
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Submitted 15 January, 2019;
originally announced January 2019.
Highly efficient rubrene-graphene charge transfer interfaces as phototransistors in the visible regime
Authors:
Gareth F. Jones,
Rui M. Pinto,
Adolfo De Sanctis,
V. Karthik Nagareddy,
C. David Wright,
Helena Alves,
Monica F. Craciun,
Saverio Russo
Abstract:
Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have s…
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Atomically thin materials such as graphene are uniquely responsive to charge transfer from adjacent materials, making them ideal charge transport layers in phototransistor devices. Effective implementation of organic semiconductors as a photoactive layer would open up a multitude of applications in biomimetic circuitry and ultra-broadband imaging but polycrystalline and amorphous thin films have shown inferior performance compared to inorganic semiconductors. Here, we utilize the long-range order in rubrene single crystals to engineer organic semiconductor-graphene phototransistors surpassing previously reported photo-gating efficiencies by one order of magnitude. Phototransistors based upon these interfaces are spectrally selective to visible wavelengths and, through photoconductive gain mechanisms, achieve responsivity as large as 10^7 A/W and a detectivity of 1.5 10^9 Jones at room temperature. These findings point towards implementing low-cost, flexible materials for amplified imaging at ultra-low light levels.
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Submitted 3 October, 2017; v1 submitted 2 October, 2017;
originally announced October 2017.
