CVD Graphene Contacts for Lateral Heterostructure MoS${_2}$ Field Effect Transistors
Authors:
Daniel S. Schneider,
Leonardo Lucchesi,
Eros Reato,
Zhenyu Wang,
Agata Piacentini,
Jens Bolten,
Damiano Marian,
Enrique G. Marin,
Aleksandra Radenovic,
Zhenxing Wang,
Gianluca Fiori,
Andras Kis,
Giuseppe Iannaccone,
Daniel Neumaier,
Max C. Lemme
Abstract:
Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metal…
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Intensive research is carried out on two-dimensional materials, in particular molybdenum disulfide, towards high-performance transistors for integrated circuits. Fabricating transistors with ohmic contacts is challenging due to the high Schottky barrier that severely limits the transistors' performance. Graphene-based heterostructures can be used in addition or as a substitute for unsuitable metals. We present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene with low contact resistances of about 9 k$Ω$$μ$m and high on/off current ratios of 10${^8}$. We also present a theoretical model calibrated on our experiments showing further potential for scaling transistors and contact areas into the few nanometers range and the possibility of a strong performance enhancement by means of layer optimizations that would make transistors promising for use in future logic circuits.
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Submitted 5 April, 2024; v1 submitted 3 April, 2023;
originally announced April 2023.
Design, Construction, and Test of the Gas Pixel Detectors for the IXPE Mission
Authors:
L. Baldini,
M. Barbanera,
R. Bellazzini,
R. Bonino,
F. Borotto,
A. Brez,
C. Caporale,
C. Cardelli,
S. Castellano,
M. Ceccanti,
S. Citraro,
N. Di Lalla,
L. Latronico,
L. Lucchesi,
C. Magazzù,
G. Magazzù,
S. Maldera,
A. Manfreda,
M. Marengo,
A. Marrocchesi,
P. Mereu,
M. Minuti,
F. Mosti,
H. Nasimi,
A. Nuti
, et al. (69 additional authors not shown)
Abstract:
Due to be launched in late 2021, the Imaging X-Ray Polarimetry Explorer (IXPE) is a NASA Small Explorer mission designed to perform polarization measurements in the 2-8 keV band, complemented with imaging, spectroscopy and timing capabilities. At the heart of the focal plane is a set of three polarization-sensitive Gas Pixel Detectors (GPD), each based on a custom ASIC acting as a charge-collectin…
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Due to be launched in late 2021, the Imaging X-Ray Polarimetry Explorer (IXPE) is a NASA Small Explorer mission designed to perform polarization measurements in the 2-8 keV band, complemented with imaging, spectroscopy and timing capabilities. At the heart of the focal plane is a set of three polarization-sensitive Gas Pixel Detectors (GPD), each based on a custom ASIC acting as a charge-collecting anode. In this paper we shall review the design, manufacturing, and test of the IXPE focal-plane detectors, with particular emphasis on the connection between the science drivers, the performance metrics and the operational aspects. We shall present a thorough characterization of the GPDs in terms of effective noise, trigger efficiency, dead time, uniformity of response, and spectral and polarimetric performance. In addition, we shall discuss in detail a number of instrumental effects that are relevant for high-level science analysis -- particularly as far as the response to unpolarized radiation and the stability in time are concerned.
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Submitted 12 July, 2021;
originally announced July 2021.
A Ballistic Two-Dimensional Lateral Heterojunction Bipolar Transistor
Authors:
Leonardo Lucchesi,
Gaetano Calogero,
Gianluca Fiori,
Giuseppe Iannaccone
Abstract:
We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode…
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We propose and investigate the intrinsically thinnest transistor concept: a monolayer ballistic heterojunction bipolar transistor based on a lateral heterostructure of transition metal dichalcogenides. The device is intrinsically thinner than a Field Effect Transistor because it does not need a top or bottom gate, since transport is controlled by the electrochemical potential of the base electrode. As typical of bipolar transistors, the collector current undergoes a tenfold increase for each 60 mV increase of the base voltage over several orders of magnitude at room temperature, without sophisticated optimization of the electrostatics. We present a detailed investigation based on self-consistent simulations of electrostatics and quantum transport for both electron and holes of a pnp device using MoS$_2$ for the 10-nm base and WSe$_2$ for emitter and collector. Our three-terminal device simulations confirm the working principle and a large current modulation I$_\text{ON}$/I$_\text{OFF}\sim 10^8$ for $ΔV_{\rm EB}=0.5$ V. Assuming ballistic transport, we are able to achieve a current gain $β\sim$ 10$^4$ over several orders of magnitude of collector current and a cutoff frequency up to the THz range. Exploration of the rich world of bipolar nanoscale device concepts in 2D materials is promising for their potential applications in electronics and optoelectronics.
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Submitted 24 March, 2021;
originally announced March 2021.
