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Ultra-broadband bright light emission from a one-dimensional inorganic van der Waals material
Authors:
Fateme Mahdikhany,
Sean Driskill,
Jeremy G. Philbrick,
Davoud Adinehloo,
Michael R. Koehler,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Brian J. LeRoy,
Oliver L. A. Monti,
Vasili Perebeinos,
Tai Kong,
John R. Schaibley
Abstract:
One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mix…
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One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mixed-dimensional van der Waals heterostructures. We find that SbPS4 can readily be exfoliated to yield long (> 10 μm) nanobundles with thicknesses that range from of 1.3 - 200 nm. We investigated the optical response of semiconducting SbPS4 nanobundles and discovered that upon excitation with blue light, they emit bright and ultra-broadband red light with a quantum yield similar to that of hBN-encapsulated MoSe2. We discovered that the ultra-broadband red light emission is a result of a large ~1 eV exciton binding energy and a ~200 meV exciton self-trapping energy, unprecedented in previous material studies. Due to the bright and ultra-broadband light emission, we believe that this class of inorganic 1D van der Waals semiconductors has numerous potential applications including on-chip tunable nanolasers, and applications that require ultra-violet to visible light conversion such as lighting and sensing. Overall, our findings open avenues for harnessing the unique characteristics of these nanomaterials, advancing both fundamental research and practical optoelectronic applications.
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Submitted 12 December, 2023;
originally announced December 2023.
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Imaging exciton-polariton transport in MoSe2 waveguides
Authors:
Fengrui Hu,
Yilong Luan,
M. E. Scott,
Jiaqiang Yan,
D. G. Mandrus,
Xiaodong Xu,
Z Fei
Abstract:
The exciton polariton (EP), a half-light and half-matter quasiparticle, is potentially an important element for future photonic and quantum technologies. It provides both strong light-matter interactions and long-distance propagation that is necessary for applications associated with energy or information transfer. Recently, strongly-coupled cavity EPs at room temperature have been demonstrated in…
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The exciton polariton (EP), a half-light and half-matter quasiparticle, is potentially an important element for future photonic and quantum technologies. It provides both strong light-matter interactions and long-distance propagation that is necessary for applications associated with energy or information transfer. Recently, strongly-coupled cavity EPs at room temperature have been demonstrated in van der Waals (vdW) materials due to their strongly-bound excitons. Here we report a nano-optical imaging study of waveguide EPs in MoSe2, a prototypical vdW semiconductor. The measured propagation length of the EPs is sensitive to the excitation photon energy and reaches over 12 μm. The polariton wavelength can be conveniently altered from 600 nm down to 300 nm by controlling the waveguide thickness. Furthermore, we found an intriguing mode back-bending dispersion close to the exciton resonance. The observed EPs in vdW semiconductors could be useful in future nanophotonic circuits operating in the near-infrared to visible spectral regions.
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Submitted 26 January, 2023;
originally announced January 2023.
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Observation of giant surface second harmonic generation coupled to nematic orders in the van der Waals antiferromagnet FePS$_3$
Authors:
Zhuoliang Ni,
Nan Huang,
Amanda V. Haglund,
David G. Mandrus,
Liang Wu
Abstract:
Second harmonic generation has been applied to study lattice, electronic and magnetic proprieties in atomically thin materials. However, inversion symmetry breaking is usually required for the materials to generate a large signal. In this work, we report a giant second-harmonic generation that arises below the Néel temperature in few-layer centrosymmetric FePS$_3$. Layer-dependent study indicates…
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Second harmonic generation has been applied to study lattice, electronic and magnetic proprieties in atomically thin materials. However, inversion symmetry breaking is usually required for the materials to generate a large signal. In this work, we report a giant second-harmonic generation that arises below the Néel temperature in few-layer centrosymmetric FePS$_3$. Layer-dependent study indicates the detected signal is from the second-order nonlinearity of the surface. The magnetism-induced surface second-harmonic response is two orders of magnitude larger than those reported in other magnetic systems, with the surface nonlinear susceptibility reaching 0.08--0.13 nm$^2$/V in 2 L--5 L samples. By combing linear dichroism and second harmonic generation experiments, we further confirm the giant second-harmonic generation is coupled to nematic orders formed by the three possible Zigzag antiferromagnetic domains. Our study shows that the surface second-harmonic generation is also a sensitive tool to study antiferromagnetic states in centrosymmetric atomically thin materials.
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Submitted 6 April, 2022;
originally announced April 2022.
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Nanometer-scale lateral p-n junctions in graphene/$α$-RuCl$_3$ heterostructures
Authors:
Daniel J. Rizzo,
Sara Shabani,
Bjarke S. Jessen,
Jin Zhang,
Alexander S. McLeod,
Carmen Rubio-Verdú,
Francesco L. Ruta,
Matthew Cothrine,
Jiaqiang Yan,
David G. Mandrus,
Stephen E. Nagler,
Angel Rubio,
James C. Hone,
Cory R. Dean,
Abhay N. Pasupathy,
D. N. Basov
Abstract:
The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $α$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nano…
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The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $α$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multi-pronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy ($\textit{s}$-SNOM) in order to simultaneously probe both the electronic and optical responses of nanobubble p-n junctions. Our STM and STS results reveal that p-n junctions with a band offset of more than 0.6 eV can be achieved over lateral length scale of less than 3 nm, giving rise to a staggering effective in-plane field in excess of 10$^8$ V/m. Concurrent $\textit{s}$-SNOM measurements confirm the utility of these nano-junctions in plasmonically-active media, and validate the use of a point-scatterer formalism for modeling surface plasmon polaritons (SPPs). Model $\textit{ab initio}$ density functional theory (DFT) calculations corroborate our experimental data and reveal a combination of sub-angstrom and few-angstrom decay processes dictating the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for the use of charge-transfer interfaces such as graphene/$α$-RuCl$_3$ to generate p-n nano-junctions.
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Submitted 12 November, 2021;
originally announced November 2021.
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Imaging the Néel vector switching in the monolayer antiferromagnet MnPSe$_3$ with strain-controlled Ising order
Authors:
Zhuoliang Ni,
A. V. Haglund,
H. Wang,
B. Xu,
C. Bernhard,
D. G. Mandrus,
X. Qian,
E. J. Mele,
C. L. Kane,
Liang Wu
Abstract:
The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the monolayer has been lacking. Nevertheless, antiferromagnets have attracted enormous interest recently in spintronics due to the absence of stray fields and their…
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The family of monolayer two-dimensional (2D) materials hosts a wide range of interesting phenomena, including superconductivity, charge density waves, topological states and ferromagnetism, but direct evidence for antiferromagnetism in the monolayer has been lacking. Nevertheless, antiferromagnets have attracted enormous interest recently in spintronics due to the absence of stray fields and their terahertz resonant frequency. Despite the great advantages of antiferromagnetic spintronics, controlling and detecting Néel vectors have been limited in bulk materials. In this work, we developed a sensitive second harmonic generation (SHG) microscope and detected long-range Néel antiferromagnetic (AFM) order and Néel vector switching down to the monolayer in MnPSe$_3$. Temperature-dependent SHG measurement in repetitive thermal cooling surprisingly collapses into two curves, which correspond to the switching of an Ising type Néel vector reversed by the time-reversal operation, instead of a six-state clock ground state expected from the threefold rotation symmetry in the structure. We imaged the spatial distribution of the Néel vectors across samples and rotated them by an arbitrary angle irrespective of the lattice in the sample plane by applying strain. By studying both a Landau theory and a microscopic model that couples strain to nearest-neighbor exchange, we conclude that the phase transition of the XY model in the presence of strain falls into the Ising universality class instead of the XY one, which could explain the extreme strain tunability. Finally, we found that the 180° AFM domain walls are highly mobile down to the monolayer after thermal cycles, paving the way for future control of the antiferromagnetic domains by strain or external fields on demand for ultra-compact 2D AFM terahertz spintronics.
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Submitted 7 April, 2021;
originally announced April 2021.
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Temperature dependent moiré trapping of interlayer excitons in MoSe2-WSe2 heterostructures
Authors:
Fateme Mahdikhanysarvejahany,
Daniel N. Meade,
Christine Muccianti,
Bekele H. Badada,
Ithwun Idi,
Adam Alfrey,
Sean Raglow,
Michael R. Koehler,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Oliver L. A. Monti,
Hongyi Yu,
Brian J. LeRoy,
John R. Schaibley
Abstract:
MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study o…
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MoSe2-WSe2 heterostructures host strongly bound interlayer excitons (IXs) which exhibit bright photoluminescence (PL) when the twist-angle is near 0° or 60°. Over the past several years, there have been numerous reports on the optical response of these heterostructures but no unifying model to understand the dynamics of IXs and their temperature dependence. Here, we perform a comprehensive study of the temperature, excitation power, and time-dependent PL of IXs. We observe a significant decrease in PL intensity above a transition temperature that we attribute to a transition from localized to delocalized IXs. Astoundingly, we find a simple inverse relationship between the IX PL energy and the transition temperature, which exhibits opposite power dependent behaviors for near 0° and 60° samples. We conclude that this temperature dependence is a result of IX-IX exchange interactions, whose effect is suppressed by the moiré potential trapping IXs at low temperature.
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Submitted 26 May, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
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Graphene/$α$-RuCl$_3$: An Emergent 2D Plasmonic Interface
Authors:
Daniel J. Rizzo,
Bjarke S. Jessen,
Zhiyuan Sun,
Francesco L. Ruta,
Jin Zhang,
Jia-Qiang Yan,
Lede Xian,
Alexander S. McLeod,
Michael E. Berkowitz,
Kenji Watanabe,
Takashi Taniguchi,
Stephen E. Nagler,
David G. Mandrus,
Angel Rubio,
Michael M. Fogler,
Andrew J. Millis,
James C. Hone,
Cory R. Dean,
D. N. Basov
Abstract:
Work function-mediated charge transfer in graphene/$α$-RuCl$_3$ heterostructures has been proposed as a strategy for generating highly-doped 2D interfaces. In this geometry, graphene should become sufficiently doped to host surface and edge plasmon-polaritons (SPPs and EPPs, respectively). Characterization of the SPP and EPP behavior as a function of frequency and temperature can be used to simult…
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Work function-mediated charge transfer in graphene/$α$-RuCl$_3$ heterostructures has been proposed as a strategy for generating highly-doped 2D interfaces. In this geometry, graphene should become sufficiently doped to host surface and edge plasmon-polaritons (SPPs and EPPs, respectively). Characterization of the SPP and EPP behavior as a function of frequency and temperature can be used to simultaneously probe the magnitude of interlayer charge transfer while extracting the optical response of the interfacial doped $α$-RuCl$_3$. We accomplish this using scanning near-field optical microscopy (SNOM) in conjunction with first-principles DFT calculations. This reveals massive interlayer charge transfer (2.7 $\times$ 10$^{13}$ cm$^{-2}$) and enhanced optical conductivity in $α$-RuCl$_3$ as a result of significant electron doping. Our results provide a general strategy for generating highly-doped plasmonic interfaces in the 2D limit in a scanning probe-accessible geometry without need of an electrostatic gate.
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Submitted 14 July, 2020;
originally announced July 2020.
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Modulation Doping via a 2d Atomic Crystalline Acceptor
Authors:
Yiping Wang,
Jesse Balgley,
Eli Gerber,
Mason Gray,
Narendra Kumar,
Xiaobo Lu,
Jia-Qiang Yan,
Arash Fereidouni,
Rabindra Basnet,
Seok Joon Yun,
Dhavala Suri,
Hikari Kitadai,
Takashi Taniguchi,
Kenji Watanabe,
Xi Ling,
Jagadeesh Moodera,
Young Hee Lee,
Hugh O. H. Churchill,
Jin Hu,
Li Yang,
Eun-Ah Kim,
David G. Mandrus,
Erik A. Henriksen,
Kenneth S. Burch
Abstract:
Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor de…
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Two-dimensional (2d) nano-electronics, plasmonics, and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Our Raman, photovoltage, and electrical conductance measurements combined with \textit{ab initio} calculations establish the large work function and narrow bands of $α$-RuCl$_3$ enable modulation doping of exfoliated, chemical vapor deposition (CVD), and molecular beam epitaxy (MBE) materials. Short-ranged lateral doping (${\leq}65\ \text{nm}$) and high homogeneity are achieved in proximate materials with a single layer of \arucl. This leads to the highest monolayer graphene (mlg) mobilities ($4,900\ \text{cm}^2/ \text{Vs}$) at these high hole densities ($3\times10^{13}\ \text{cm}^{-2}$); and yields larger charge transfer to bilayer graphene (blg) ($6\times10^{13}\ \text{cm}^{-2}$). We further demonstrate proof of principle optical sensing, control via twist angle, and charge transfer through hexagonal boron nitride (hBN).
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Submitted 15 July, 2020; v1 submitted 13 July, 2020;
originally announced July 2020.
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2D Semiconductor Nonlinear Plasmonic Modulators
Authors:
Matthew Klein,
Bekele H. Badada,
Rolf Binder,
Adam Alfrey,
Max McKie,
Michael R. Koehler,
David G. Mandrus,
Takashi Taniguchi,
Kenji Watanabe,
Brian J. LeRoy,
John R. Schaibley
Abstract:
A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this wo…
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A plasmonic modulator is a device that controls the amplitude or phase of propagating plasmons. In a pure plasmonic modulator, the presence or absence of a pump plasmonic wave controls the amplitude of a probe plasmonic wave through a channel. This control has to be mediated by an interaction between disparate plasmonic waves, typically requiring the integration of a nonlinear material. In this work, we demonstrate the first 2D semiconductor nonlinear plasmonic modulator based on a WSe2 monolayer integrated on top of a lithographically defined metallic waveguide. We utilize the strong coupling between the surface plasmon polaritons, SPPs, and excitons in the WSe2 to give a 73 percent change in transmission through the device. We demonstrate control of the propagating SPPs using both optical and SPP pumps, realizing the first demonstration of a 2D semiconductor nonlinear plasmonic modulator, with a modulation depth of 4.1 percent, and an ultralow switching energy estimated to be 40 aJ.
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Submitted 12 February, 2019;
originally announced February 2019.
