The TRAMOS pixel as a photo-detection device: design, architecture and building blocks
Authors:
Nicolas T. Fourches,
Vishant Kumar,
Yves Serruys,
G. Gutierrez,
F. Leprêtre,
F. Jomard
Abstract:
The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate l…
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The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate localization. Source-drain current modulation occurs, measurable during readout. The buried gate (Deep Trapping Gate or DTG) contains deep level centers which can be introduced during process or may be made with a Quantum Well. The device can be scaled down providing a micron range resolution. The proof of principle for such a device was verified using 2D device and process simulations. Work under way focusses on the study of building blocks. In this contribution, the pixel proof of design, using existing fabrication techniques will be discussed first. The use of this pixel for photon imaging will be discussed
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Submitted 23 October, 2017;
originally announced October 2017.
Limits in point to point resolution of MOS (Metal-Oxide-Semiconductor) based pixels detector arrays
Authors:
Nicolas Fourches,
Xavier Coppolani,
Daniel Desforge,
Mariam Kebbiri,
Vishant Kumar,
Yves Serruys,
Gaêlle Gutierrez,
Frederic Leprêtre,
François Jomard
Abstract:
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pix…
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In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pixel-pitch in the 10 micrometer range. Attempts to design small pixels based on SOI (Silicon On Insulator) technology will be briefly recalled here. This paper is devoted to the evaluation of the building blocks with regard to their use in pixel arrays for the accurate tracking of the charged particles. We will make here a simulations based quantitative evaluation of the physical limits in the pixel size. A design based on CMOS (Complementary Metal-Oxide-Semiconductor) compatible technologies that allows a reduction of the pixel size down to the sub-micronmeter range is introduced. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization.
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Submitted 5 February, 2018; v1 submitted 28 August, 2017;
originally announced August 2017.
