Showing 1–20 of 20 results for author: Fourches, N

Solid State Detectors and Tracking for Snowmass

Authors: A. Affolder, A. Apresyan, S. Worm, M. Albrow, D. Ally, D. Ambrose, E. Anderssen, N. Apadula, P. Asenov, W. Armstrong, M. Artuso, A. Barbier, P. Barletta, L. Bauerdick, D. Berry, M. Bomben, M. Boscardin, J. Brau, W. Brooks, M. Breidenbach, J. Buckley, V. Cairo, R. Caputo, L. Carpenter, M. Centis-Vignali , et al. (110 additional authors not shown)

Abstract: Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the… ▽ More Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03). △ Less

Submitted 19 October, 2022; v1 submitted 8 September, 2022; originally announced September 2022.

Comments: for the Snowmass Instrumentation Frontier Solid State Detector and Tracking community

The International Linear Collider: Report to Snowmass 2021

Authors: Alexander Aryshev, Ties Behnke, Mikael Berggren, James Brau, Nathaniel Craig, Ayres Freitas, Frank Gaede, Spencer Gessner, Stefania Gori, Christophe Grojean, Sven Heinemeyer, Daniel Jeans, Katja Kruger, Benno List, Jenny List, Zhen Liu, Shinichiro Michizono, David W. Miller, Ian Moult, Hitoshi Murayama, Tatsuya Nakada, Emilio Nanni, Mihoko Nojiri, Hasan Padamsee, Maxim Perelstein , et al. (487 additional authors not shown)

Abstract: The International Linear Collider (ILC) is on the table now as a new global energy-frontier accelerator laboratory taking data in the 2030s. The ILC addresses key questions for our current understanding of particle physics. It is based on a proven accelerator technology. Its experiments will challenge the Standard Model of particle physics and will provide a new window to look beyond it. This docu… ▽ More The International Linear Collider (ILC) is on the table now as a new global energy-frontier accelerator laboratory taking data in the 2030s. The ILC addresses key questions for our current understanding of particle physics. It is based on a proven accelerator technology. Its experiments will challenge the Standard Model of particle physics and will provide a new window to look beyond it. This document brings the story of the ILC up to date, emphasizing its strong physics motivation, its readiness for construction, and the opportunity it presents to the US and the global particle physics community. △ Less

Submitted 16 January, 2023; v1 submitted 14 March, 2022; originally announced March 2022.

Comments: 356 pages, Large pdf file (40 MB) submitted to Snowmass 2021; v2 references to Snowmass contributions added, additional authors; v3 references added, some updates, additional authors

Report number: DESY-22-045, IFT--UAM/CSIC--22-028, KEK Preprint 2021-61, PNNL-SA-160884, SLAC-PUB-17662

Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021

Authors: M. R. Hoeferkamp, S. Seidel, S. Kim, J. Metcalfe, A. Sumant, H. Kagan, W. Trischuk, M. Boscardin, G. -F. Dalla Betta, D. M. S. Sultan, N. T. Fourches, C. Renard, A. Barbier, T. Mahajan, A. Minns, V. Tokranov, M. Yakimov, S. Oktyabrsky, C. Gingu, P. Murat, M. T. Hedges

Abstract: Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent positi… ▽ More Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Comments: 15 pages, 6 figures

Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A

Authors: Nicolas T. Fourches, Geraldine Hallais, Charles Renard

Abstract: CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex detector is justified for the ILC. To achieve a point(spatial single layer) resolution below the one-μm range while improving other characteristics (radiation toleran… ▽ More CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex detector is justified for the ILC. To achieve a point(spatial single layer) resolution below the one-μm range while improving other characteristics (radiation tolerance and eventually time resolution) we will need the use of 1-micron pitch pixels. Therefore, we propose a single MOS transistor that acts as an amplifying device and a detector with a buried charge-collecting gate. Device simulations both classical and quantum, have led to the proposed DoTPiX structure. With the evolution of silicon processes, well below 100 nm line feature, this pixel should be feasible. We will present this pixel detector and the present status of its development in both our institution (IRFU) and in other collaborating labs (CNRS/C2N). △ Less

Submitted 19 May, 2021; v1 submitted 12 May, 2021; originally announced May 2021.

Comments: A : Talk presented at the International Workshop On Linear Colliders (LCWS 2021) 15-18 March 2021.C21-03-15.1

Progress in particle tracking and vertexing detectors

Authors: Nicolas Fourches, University Paris-Saclay

Abstract: This is part of a document, which is devoted to the developments of pixel detectors in the context of the International Linear Collider. From the early developments of the MIMOSAs to the proposed DotPix I recall some of the major progresses. The need for very precise vertex reconstruction is the reason for the Research and Development of new pixel detectors, first derived from the CMOS sensors and… ▽ More This is part of a document, which is devoted to the developments of pixel detectors in the context of the International Linear Collider. From the early developments of the MIMOSAs to the proposed DotPix I recall some of the major progresses. The need for very precise vertex reconstruction is the reason for the Research and Development of new pixel detectors, first derived from the CMOS sensors and in further steps with new semiconductors structures. The problem of radiation effects was investigated and this is the case for the noise level with emphasis of the benefits of downscaling. Specific semiconductor processing and characterisation techniques are also described, with the perspective of a new pixel structure. △ Less

Submitted 22 March, 2020; originally announced March 2020.

Comments: report preprint March 2020

The TRAMOS pixel as a photo-detection device: design, architecture and building blocks

Authors: Nicolas T. Fourches, Vishant Kumar, Yves Serruys, G. Gutierrez, F. Leprêtre, F. Jomard

Abstract: The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate l… ▽ More The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate localization. Source-drain current modulation occurs, measurable during readout. The buried gate (Deep Trapping Gate or DTG) contains deep level centers which can be introduced during process or may be made with a Quantum Well. The device can be scaled down providing a micron range resolution. The proof of principle for such a device was verified using 2D device and process simulations. Work under way focusses on the study of building blocks. In this contribution, the pixel proof of design, using existing fabrication techniques will be discussed first. The use of this pixel for photon imaging will be discussed △ Less

Submitted 23 October, 2017; originally announced October 2017.

Limits in point to point resolution of MOS (Metal-Oxide-Semiconductor) based pixels detector arrays

Authors: Nicolas Fourches, Xavier Coppolani, Daniel Desforge, Mariam Kebbiri, Vishant Kumar, Yves Serruys, Gaêlle Gutierrez, Frederic Leprêtre, François Jomard

Abstract: In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pix… ▽ More In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pixel-pitch in the 10 micrometer range. Attempts to design small pixels based on SOI (Silicon On Insulator) technology will be briefly recalled here. This paper is devoted to the evaluation of the building blocks with regard to their use in pixel arrays for the accurate tracking of the charged particles. We will make here a simulations based quantitative evaluation of the physical limits in the pixel size. A design based on CMOS (Complementary Metal-Oxide-Semiconductor) compatible technologies that allows a reduction of the pixel size down to the sub-micronmeter range is introduced. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization. △ Less

Submitted 5 February, 2018; v1 submitted 28 August, 2017; originally announced August 2017.

Comments: PSD11 conference,2017

Performance of the EDELWEISS-III experiment for direct dark matter searches

Authors: E. Armengaud, Q. Arnaud, C. Augier, A. Benoît, L. Bergé, T. Bergmann, J. Billard, T. de Boissière, G. Bres, A. Broniatowski, V. Brudanin, P. Camus, A. Cazes, M. Chapellier, F. Charlieux, M. De Jésus, L. Dumoulin, K. Eitel, D. Filosofov, N. Foerster, N. Fourches, G. Garde, J. Gascon, A. Giuliani, M. Grollier , et al. (38 additional authors not shown)

Abstract: We present the results of measurements demonstrating the efficiency of the EDELWEISS-III array of cryogenic germanium detectors for direct dark matter searches. The experimental setup and the FID (Fully Inter-Digitized) detector array is described, as well as the efficiency of the double measurement of heat and ionization signals in background rejection. For the whole set of 24 FID detectors used… ▽ More We present the results of measurements demonstrating the efficiency of the EDELWEISS-III array of cryogenic germanium detectors for direct dark matter searches. The experimental setup and the FID (Fully Inter-Digitized) detector array is described, as well as the efficiency of the double measurement of heat and ionization signals in background rejection. For the whole set of 24 FID detectors used for coincidence studies, the baseline resolutions for the fiducial ionization energy are mainly below 0.7 keV$_{ee}$ (FHWM) whereas the baseline resolutions for heat energies are mainly below 1.5 keV$_{ee}$ (FWHM). The response to nuclear recoils as well as the very good discrimination capability of the FID design has been measured with an AmBe source. The surface $β$- and $α$-decay rejection power of $R_{\rm surf} < 4 \times 10^{-5}$ per $α$ at 90% C.L. has been determined with a $^{210}$Pb source, the rejection of bulk $γ$-ray events has been demonstrated using $γ$-calibrations with $^{133}$Ba sources leading to a value of $R_{γ{\rm -mis-fid}} < 2.5 \times 10^{-6}$ at 90% C.L.. The current levels of natural radioactivity measured in the detector array are shown as the rate of single $γ$ background. The fiducial volume fraction of the FID detectors has been measured to a weighted average value of $(74.6 \pm 0.4)\%$ using the cosmogenic activation of the $^{65}$Zn and $^{68,71}$Ge isotopes. The stability and uniformity of the detector response is also discussed. The achieved resolutions, thresholds and background levels of the upgraded EDELWEISS-III detectors in their setup are thus well suited to the direct search of WIMP dark matter over a large mass range. △ Less

Submitted 4 June, 2017; originally announced June 2017.

Signals induced by charge-trapping in EDELWEISS FID detectors: analytical modeling and applications

Authors: The EDELWEISS Collaboration, Q. Arnaud, E. Armengaud, C. Augier, A. Benoît, L. Bergé, J. Billard, J. Blümer, T. de Boissière, A. Broniatowski, P. Camus, A. Cazes, M. Chapellier, F. Charlieux, L. Dumoulin, K. Eitel, N. Foerster, N. Fourches, J. Gascon, A. Giuliani, M. Gros, L. Hehn, G. Heuermann, M. De Jésus, Y. Jin , et al. (25 additional authors not shown)

Abstract: The EDELWEISS-III direct dark matter search experiment uses cryogenic HP-Ge detectors Fully covered with Inter-Digitized electrodes (FID). They are operated at low fields ($<1\;\mathrm{V/cm}$), and as a consequence charge-carrier trapping significantly affects both the ionization and heat energy measurements. This paper describes an analytical model of the signals induced by trapped charges in FID… ▽ More The EDELWEISS-III direct dark matter search experiment uses cryogenic HP-Ge detectors Fully covered with Inter-Digitized electrodes (FID). They are operated at low fields ($<1\;\mathrm{V/cm}$), and as a consequence charge-carrier trapping significantly affects both the ionization and heat energy measurements. This paper describes an analytical model of the signals induced by trapped charges in FID detectors based on the Shockley-Ramo theorem. It is used to demonstrate that veto electrodes, initially designed for the sole purpose of surface event rejection, can be used to provide a sensitivity to the depth of the energy deposits, characterize the trapping in the crystals, perform heat and ionization energy corrections and improve the ionization baseline resolutions. These procedures are applied successfully to actual data. △ Less

Submitted 29 June, 2016; v1 submitted 26 June, 2016; originally announced June 2016.

Comments: 17 pages 12 figures, submitted to JINST, author list updated

Constraints on low-mass WIMPs from the EDELWEISS-III dark matter search

Authors: EDELWEISS Collaboration, E. Armengaud, Q. Arnaud, C. Augier, A. Benoît, A. Benoît, L. Bergé, T. Bergmann, J. Billard, J. Blümer, T. de Boissière, G. Bres, A. Broniatowski, V. Brudanin, P. Camus, A. Cazes, M. Chapellier, F. Charlieux, L. Dumoulin, K. Eitel, D. Filosofov, N. Foerster, N. Fourches, G. Garde, J. Gascon , et al. (42 additional authors not shown)

Abstract: We present the results of a search for elastic scattering from galactic dark matter in the form of Weakly Interacting Massive Particles (WIMPs) in the 4-30 GeV/$c^2$ mass range. We make use of a 582 kg-day fiducial exposure from an array of 800 g Germanium bolometers equipped with a set of interleaved electrodes with full surface coverage. We searched specifically for $\sim 2.5-20$ keV nuclear rec… ▽ More We present the results of a search for elastic scattering from galactic dark matter in the form of Weakly Interacting Massive Particles (WIMPs) in the 4-30 GeV/$c^2$ mass range. We make use of a 582 kg-day fiducial exposure from an array of 800 g Germanium bolometers equipped with a set of interleaved electrodes with full surface coverage. We searched specifically for $\sim 2.5-20$ keV nuclear recoils inside the detector fiducial volume. As an illustration the number of observed events in the search for 5 (resp. 20) GeV/$c^2$ WIMPs are 9 (resp. 4), compared to an expected background of 6.1 (resp. 1.4). A 90% CL limit of $4.3\times 10^{-40}$ cm$^2$ (resp. $9.4\times 10^{-44}$ cm$^2$) is set on the spin-independent WIMP-nucleon scattering cross-section for 5 (resp. 20) GeV/$c^2$ WIMPs. This result represents a 41-fold improvement with respect to the previous EDELWEISS-II low-mass WIMP search for 7 GeV/$c^2$ WIMPs. The derived constraint is in tension with hints of WIMP signals from some recent experiments, thus confirming results obtained with different detection techniques. △ Less

Submitted 9 May, 2016; v1 submitted 16 March, 2016; originally announced March 2016.

Comments: Matches published version

Journal ref: JCAP 05 (2016) 019

Simulations of a silicon pixel based on MOS Deep Trapping Gate Principle

Authors: Nicolas T. Fourches, Wilfried Vervisch

Abstract: The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized deep level centers for holes (Deep Trapping Gate or DTG) renders possible the operation of this field effect pixel detector. One alternative to Deep Level intr… ▽ More The concept of the deep trapping gate device was introduced fairly recently on the basis of technological and transport simulations currently used in the field of classical electron devices. The concept of a buried gate containing localized deep level centers for holes (Deep Trapping Gate or DTG) renders possible the operation of this field effect pixel detector. One alternative to Deep Level introduction is the use of a quantum box, which is a hole quantum-well and an electron barrier. In all of these cases the buried gate modulates the drain-source current. This principle was formerly evaluated with realistic simulations parameters and this shows that a measurable signal is obtained for an energy deposition of a minimum-ionizing particle within a limited silicon thickness. In this work a quantitative study of the response of such a pixel to Minimum Ionizing Particles. The influence of some parameters such as the thickness of the pixel and its lateral dimensions, on the operation of the pixel is studied here using current available simulation tools, in quantum mode when a narrow Ge layer is used as a buried gate. A bias sequence is introduced here to separate the operation of the pixel in detection and readout mode. The first frabrication technique introduced is deep impurity implantation, followed by annealing. Recent work on quantum boxes and dots opens the possibility to the use Ge boxes as a DTG.Ion implantation and alternative methods such an epitaxial growth DTG can be reasonably considered. If the related bottlenecks are overcome the pixel should be a good candidate for high luminosity particle collider inner detectors, provides that its potential radiation hardness is proven sufficient for these applications. △ Less

Submitted 31 January, 2016; originally announced February 2016.

Comments: IWORID conference 2015 paper submitted. This paper follows the preceding arxiv document "Silicon MOS Pixel Based on the Deep Trapping Gate Principle : Design and Material Science Challenges" Nicolas Fourches et. al

LUMINEU: a search for neutrinoless double beta decay based on ZnMoO$_4$ scintillating bolometers

Authors: E. Armengaud, Q. Arnaud, C. Augier, A. Benoit, A. Benoit, L. Berge, R. S. Boiko, T. Bergmann, J. Blumer, A. Broniatowski, V. Brudanin, P. Camus, A. Cazes, M. Chapellier, F. Charlieux, D. M. Chernyak, N. Coron, P. Coulter, F. A. Danevich, T. de Boissiere, R. Decourt, M. De Jesus, L. Devoyon, A. -A. Drillien, L. Dumoulin , et al. (69 additional authors not shown)

Abstract: The LUMINEU is designed to investigate the possibility to search for neutrinoless double beta decay in $^{100}$Mo by means of a large array of scintillating bolometers based on ZnMoO$_4$ crystals enriched in $^{100}$Mo. High energy resolution and relatively fast detectors, which are able to measure both the light and the heat generated upon the interaction of a particle in a crystal, are very prom… ▽ More The LUMINEU is designed to investigate the possibility to search for neutrinoless double beta decay in $^{100}$Mo by means of a large array of scintillating bolometers based on ZnMoO$_4$ crystals enriched in $^{100}$Mo. High energy resolution and relatively fast detectors, which are able to measure both the light and the heat generated upon the interaction of a particle in a crystal, are very promising for the recognition and rejection of background events. We present the LUMINEU concepts and the experimental results achieved aboveground and underground with large-mass natural and enriched crystals. The measured energy resolution, the $α/β$ discrimination power and the radioactive internal contamination are all within the specifications for the projected final LUMINEU sensitivity. Simulations and preliminary results confirm that the LUMINEU technology can reach zero background in the region of interest (around 3 MeV) with exposures of the order of hundreds kg$\times$years, setting the bases for a next generation $0\nu2β$ decay experiment capable to explore the inverted hierarchy region of the neutrino mass pattern. △ Less

Submitted 19 January, 2016; originally announced January 2016.

Comments: 5 pages, 3 figures, submitted as proceedings of the TAUP 2015 conference

Scintillating bolometers based on ZnMoO$_4$ and Zn$^{100}$MoO$_4$ crystals to search for 0$ν$2$β$ decay of $^{100}$Mo (LUMINEU project): first tests at the Modane Underground Laboratory

Authors: D. V. Poda, E. Armengaud, Q. Arnaud, C. Augier, A. Benoît, A. Benoît, L. Bergé, R. S. Boiko, T. Bergmann, J. Blümer, A. Broniatowski, V. Brudanin, P. Camus, A. Cazes, B. Censier, M. Chapellier, F. Charlieux, D. M. Chernyak, N. Coron, P. Coulter, G. A. Cox, F. A. Danevich, T. de Boissière, R. Decourt, M. De Jesus , et al. (69 additional authors not shown)

Abstract: The technology of scintillating bolometers based on zinc molybdate (ZnMoO$_4$) crystals is under development within the LUMINEU project to search for 0$ν$2$β$ decay of $^{100}$Mo with the goal to set the basis for large scale experiments capable to explore the inverted hierarchy region of the neutrino mass pattern. Advanced ZnMoO$_4$ crystal scintillators with mass of $\sim$~0.3 kg were developed… ▽ More The technology of scintillating bolometers based on zinc molybdate (ZnMoO$_4$) crystals is under development within the LUMINEU project to search for 0$ν$2$β$ decay of $^{100}$Mo with the goal to set the basis for large scale experiments capable to explore the inverted hierarchy region of the neutrino mass pattern. Advanced ZnMoO$_4$ crystal scintillators with mass of $\sim$~0.3 kg were developed and Zn$^{100}$MoO$_4$ crystal from enriched $^{100}$Mo was produced for the first time by using the low-thermal-gradient Czochralski technique. One ZnMoO$_4$ scintillator and two samples (59 g and 63 g) cut from the enriched boule were tested aboveground at milli-Kelvin temperature as scintillating bolometers showing a high detection performance. The first results of the low background measurements with three ZnMoO$_4$ and two enriched detectors installed in the EDELWEISS set-up at the Modane Underground Laboratory (France) are presented. △ Less

Submitted 4 February, 2015; originally announced February 2015.

Comments: 7 pages, 5 figures, Contribution to the proceedings of the 37th International Conference on High Energy Physics (ICHEP 2014), Valencia, Spain, 2-9 July 2014

Journal ref: Nuclear and Particle Physics Proceedings 273-275 (2016) 1801-1806

Silicon MOS Pixel Based on the Deep Trapping Gate Principle: Design and Material Science Challenges

Authors: Nicolas T. Fourches, G. Regula, W. Vervisch

Abstract: The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A buried gate containing localized deep level centers (Deep Trapping Gate or DTG) is the key for the operation of this field effect pixel detector. This can be mad… ▽ More The deep trapping gate pixel device was described recently as an alternative to CMOS 3T pixel. The feasibilty of this device was studied with technological and transport simulations used in classical electron devices and process design. A buried gate containing localized deep level centers (Deep Trapping Gate or DTG) is the key for the operation of this field effect pixel detector. This can be made with deep levels or a quantum box. This buried gate can modulates the drain-source current, the same way the upper gate does. This principle was evaluated with realistic simulations physical parameters and this shows that the signal magnitude is sufficient for an energy deposition of a Minimum Ionizing Particle within a limited silicon thickness (a few microns). We will study here the potential techniques usable for the fabrication of the device with their drawbacks, advantages and limits. The first technique introduced is impurity implantation, followed by annealing. The problems related to the control of the defects in the DTG will be examined in the light of recent work on ion implantation. As an alternative recent work on quantum dots opens the possibility to the use Ge dots as a DTG. Ion implantation can again be used with some limitations. As an alternative to ion implantation an epitaxial DTG could be fabricated using standard techniques. The first conclusion of this study is that all the established techniques necessary for the development of the DTG pixel can reasonably be successful because the related bottlenecks may be overcome. The deep levels concentration in the DTG (above 10^18 cm-3) is higher than the concentration of radiation induced defects for integrated fluences lower than 1x10^16 cm-3. △ Less

Submitted 31 January, 2016; v1 submitted 27 December, 2014; originally announced December 2014.

Electrical-modelling, design and simulation of cumulative radiation effects in semiconductor pixels detectors: prospects and limits

Authors: Nicolas T. Fourches, Remi Chipaux

Abstract: Silicon detectors have gained in popularity since silicon became a widely used micro/nanoelectronic semiconductor material. Silicon detectors are used in particle physics as well as imaging for pixel based detecting systems. Over the past twenty years a lot of experimental efforts have been focused on the effects of ionizing and non-ionizing radiation on silicon pixels. Some of this research was d… ▽ More Silicon detectors have gained in popularity since silicon became a widely used micro/nanoelectronic semiconductor material. Silicon detectors are used in particle physics as well as imaging for pixel based detecting systems. Over the past twenty years a lot of experimental efforts have been focused on the effects of ionizing and non-ionizing radiation on silicon pixels. Some of this research was done in the framework of high luminosity particle physics experiments, along with radiation hardness studies of basic semiconductors devices. In its simplest form the semiconductor pixel detectors reduce to a PIN or PN structure partially or totally depleted, or in some MOS and APD (Avalanche PhotoDiode) structures. Bulk or surface defects affect considerably transport of free carriers. We propose guidelines for pixel design, which will be tested through a few pixel structures. This design method includes into the design the properties of defects. The electrical properties reduce to parameters, which can be introduced in a standard simulation code to make predictive simulations. We include an analytical model for defect annealing derived from isochronal annealing experiments. The proposed method can be used to study pixels detectors with different geometrical structures and made with different semiconducting materials. Its purpose is to provide an alternative to tedious and extensive radiation tests on final fabricated detectors. This is necessary for the long-term reliability of detectors together with their radiation tolerance. A general method for pixel design is introduced and we will show how it can be used for the design of alternate to silicon (germanium) pixels. △ Less

Submitted 19 November, 2014; v1 submitted 28 October, 2014; originally announced October 2014.

Comments: Conference Poster, list of authors updated

Journal ref: 2015 JINST 10 C01036

Background studies for the EDELWEISS dark matter experiment

Authors: E. Armengaud, C. Augier, A. Benoît, A. Benoît, L. Bergé, T. Bergmann, J. Blümer, A. Broniatowski, V. Brudanin, B. Censier, M. Chapellier, F. Charlieux, F. Couedo, P. Coulter, G. A. Cox, M. De Jesus, J. Domange, A. -A. Drilien, L. Dumoulin, K. Eitel, D. Filosofov, N. Fourches, J. Gascon, G. Gerbier, M. Gros , et al. (34 additional authors not shown)

Abstract: The EDELWEISS-II collaboration has completed a direct search for WIMP dark matter using cryogenic Ge detectors (400 g each) and 384 kg$\times$days of effective exposure. A cross-section of $4.4 \times 10^{-8}$ pb is excluded at 90% C.L. for a WIMP mass of 85 GeV. The next phase, EDELWEISS-III, aims to probe spin-independent WIMP-nucleon cross-sections down to a few $\times10^{-9}$ pb. We present h… ▽ More The EDELWEISS-II collaboration has completed a direct search for WIMP dark matter using cryogenic Ge detectors (400 g each) and 384 kg$\times$days of effective exposure. A cross-section of $4.4 \times 10^{-8}$ pb is excluded at 90% C.L. for a WIMP mass of 85 GeV. The next phase, EDELWEISS-III, aims to probe spin-independent WIMP-nucleon cross-sections down to a few $\times10^{-9}$ pb. We present here the study of gamma and neutron background coming from radioactive decays in the set-up and shielding materials. We have carried out Monte Carlo simulations for the completed EDELWEISS-II setup with GEANT4 and normalised the expected background rates to the measured radioactivity levels (or their upper limits) of all materials and components. The expected gamma-ray event rate in EDELWEISS-II at 20-200 keV agrees with the observed rate of 82 events/kg/day within the uncertainties in the measured concentrations. The calculated neutron rate from radioactivity of 1.0-3.1 events (90% C.L.) at 20-200 keV in the EDELWEISS-II data together with the expected upper limit on the misidentified gamma-ray events ($\le0.9$), surface betas ($\le0.3$), and muon-induced neutrons ($\le0.7$), do not contradict 5 observed events in nuclear recoil band. We have then extended the simulation framework to the EDELWEISS-III configuration with 800 g crystals, better material purity and additional neutron shielding inside the cryostat. The gamma-ray and neutron backgrounds in 24 kg fiducial mass of EDELWEISS-III have been calculated as 14-44 events/kg/day and 0.7-1.4 events per year, respectively. The results of the background studies performed in the present work have helped to select better purity components and improve shielding in EDELWEISS-III to further reduce the expected rate of background events in the next phase of the experiment. △ Less

Submitted 15 May, 2013; originally announced May 2013.

Comments: 15 pages, 9 figures, to be published in Astroparticle Physics

Muon-induced background in the EDELWEISS dark matter search

Authors: The EDELWEISS collaboration, B. Schmidt, E. Armengaud, C. Augier, A. Benoit, L. Bergé, T. Bergmann, J. Blümer, G. Bres, A. Broniatowski, V. Brudanin, B. Censier, M. Chapellier, F. Charlieux, S. Collin, P. Coulter, G. A. Cox, O. Crauste, J. Domange, L. Dumoulin, K. Eitel, D. Filosofov, N. Fourches, G. Garde, J. Gascon , et al. (33 additional authors not shown)

Abstract: A dedicated analysis of the muon-induced background in the EDELWEISS dark matter search has been performed on a data set acquired in 2009 and 2010. The total muon flux underground in the Laboratoire Souterrain de Modane (LSM) was measured to be $Φ_μ=(5.4\pm 0.2 ^{+0.5}_{-0.9})$\,muons/m$^2$/d. The modular design of the muon-veto system allows the reconstruction of the muon trajectory and hence the… ▽ More A dedicated analysis of the muon-induced background in the EDELWEISS dark matter search has been performed on a data set acquired in 2009 and 2010. The total muon flux underground in the Laboratoire Souterrain de Modane (LSM) was measured to be $Φ_μ=(5.4\pm 0.2 ^{+0.5}_{-0.9})$\,muons/m$^2$/d. The modular design of the muon-veto system allows the reconstruction of the muon trajectory and hence the determination of the angular dependent muon flux in LSM. The results are in good agreement with both MC simulations and earlier measurements. Synchronization of the muon-veto system with the phonon and ionization signals of the Ge detector array allowed identification of muon-induced events. Rates for all muon-induced events $Γ^μ=(0.172 \pm 0.012)\, \rm{evts}/(\rm{kg \cdot d})$ and of WIMP-like events $Γ^{μ-n} = 0.008^{+0.005}_{-0.004}\, \rm{evts}/(\rm{kg \cdot d})$ were extracted. After vetoing, the remaining rate of accepted muon-induced neutrons in the EDELWEISS-II dark matter search was determined to be $Γ^{μ-n}_{\rm irred} < 6\cdot 10^{-4} \, \rm{evts}/(\rm{kg \cdot d})$ at 90%\,C.L. Based on these results, the muon-induced background expectation for an anticipated exposure of 3000\,\kgd\ for EDELWEISS-3 is $N^{μ-n}_{3000 kg\cdot d} < 0.6$ events. △ Less

Submitted 28 February, 2013; originally announced February 2013.

Comments: 21 pages, 16 figures, Accepted for publication in Astropart. Phys

Journal ref: Astroparticle Physics 44 (2013) 28-39

A search for low-mass WIMPs with EDELWEISS-II heat-and-ionization detectors

Authors: EDELWEISS Collaboration, E. Armengaud, C. Augier, A. Benoît, L. Bergé, T. Bergmann, J. Blümer, A. Broniatowski, V. Brudanin, B. Censier, M. Chapellier, F. Charlieux, F. Couëdo, P. Coulter, G. A. Cox, J. Domange, A. A. Drillien, L. Dumoulin, K. Eitel, D. Filosofov, N. Fourches, J. Gascon, G. Gerbier, J. Gironnet, M. Gros , et al. (30 additional authors not shown)

Abstract: We report on a search for low-energy (E < 20 keV) WIMP-induced nuclear recoils using data collected in 2009 - 2010 by EDELWEISS from four germanium detectors equipped with thermal sensors and an electrode design (ID) which allows to efficiently reject several sources of background. The data indicate no evidence for an exponential distribution of low-energy nuclear recoils that could be attributed… ▽ More We report on a search for low-energy (E < 20 keV) WIMP-induced nuclear recoils using data collected in 2009 - 2010 by EDELWEISS from four germanium detectors equipped with thermal sensors and an electrode design (ID) which allows to efficiently reject several sources of background. The data indicate no evidence for an exponential distribution of low-energy nuclear recoils that could be attributed to WIMP elastic scattering after an exposure of 113 kg.d. For WIMPs of mass 10 GeV, the observation of one event in the WIMP search region results in a 90% CL limit of 1.0x10^-5 pb on the spin-independent WIMP-nucleon scattering cross-section, which constrains the parameter space associated with the findings reported by the CoGeNT, DAMA and CRESST experiments. △ Less

Submitted 5 September, 2012; v1 submitted 7 July, 2012; originally announced July 2012.

Comments: PRD rapid communication accepted

Journal ref: Phys. Rev. D 86, 051701(R) (2012)

An Approximate Calculation of Active Pixel Sensors Temporal Noise for High Energy Physics

Authors: Nicolas Fourches

Abstract: A simple calculation of the temporal noise of an elementary pixel is made. The equivalent noise charge takes into consideration the series and parallel noise as a function of the observation time. A simple calculation of the temporal noise of an elementary pixel is made. The equivalent noise charge takes into consideration the series and parallel noise as a function of the observation time. △ Less

Submitted 30 May, 2008; originally announced May 2008.

Comments: Research Note

Radiation Induced Effects in a Monolithic Active Pixel Sensor : The Mimosa8 Chip

Authors: Nicolas Fourches, M. Besançon, R. Chipaux, Y. Li, P. Lutz, F. Orsini

Abstract: We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show that extended defects due to the neutron damage changes the distribution of the pixels pedestals. This is mainly due to the increase of the dark generation curr… ▽ More We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show that extended defects due to the neutron damage changes the distribution of the pixels pedestals. This is mainly due to the increase of the dark generation current due to the presence of deep traps in the depleted zones of the sensors. Alternatively, the exposure to ionizing irradiation increases the pedestals in a more homogeneous way, this coming from the generation of interface states at the Si/SiO2 interface supplemented by the presence of positively charged traps in the oxides. the sensors' leakage current is then increased. We discuss the results in view of increasing the radiation-hardness of the MAPS, bearing in mind that these chips were not designed with any rad-tol layout technique. △ Less

Submitted 26 May, 2008; originally announced May 2008.