Showing 1–50 of 52 results for author: Boscardin, M

Plasma-Based Etching Approach for GEM Detector Microfabrication at FBK for X-ray polarimetry in space

Authors: A. Lega, D. Novel, T. Facchinelli, C. Sgro', L. Baldini, M. Minuti, M. Boscardin, G. Pepponi, R. Iuppa, R. Hall-Wilton, L. Latronico

Abstract: Gas Electron Multiplier (GEM) detectors are crucial for enabling high-resolution X-ray polarisation of astrophysical sources when coupled to custom pixel readout ASIC in Gas Pixel Detectors (GPD), as in the Imaging X-ray Polarimetry Explorer (IXPE), the Polarlight cubesat pathfinder and the PFA telescope onboard the future large enhanced X-ray Timing and Polarimetry (eXTP) Chinese mission. The R&D… ▽ More Gas Electron Multiplier (GEM) detectors are crucial for enabling high-resolution X-ray polarisation of astrophysical sources when coupled to custom pixel readout ASIC in Gas Pixel Detectors (GPD), as in the Imaging X-ray Polarimetry Explorer (IXPE), the Polarlight cubesat pathfinder and the PFA telescope onboard the future large enhanced X-ray Timing and Polarimetry (eXTP) Chinese mission. The R&D efforts of the IXPE collaboration have resulted in mature GPD technology. However, limitations in the classical wet-etch or laser-drilled fabrication process of GEMs motivated our exploration of alternative methods. This work focuses on investigating a plasma-based etching approach for fabricating GEM patterns at Fondazione Bruno Kessler (FBK). The objective is to improve the aspect ratio of the GEM holes, to mitigate the charging of the GEM dielectric which generates rate-dependent gain changes. Unlike the traditional wet-etch process, Reactive Ion Etching (RIE) enables more vertical etching profiles and thus better aspect ratios. Moreover, the RIE process promises to overcome non-uniformities in the GEM hole patterns which are believed to cause systemic effects in the azimuthal response of GPDs equipped with either laser-drilled or wet-etch GEMs. We present a GEM geometry with 20 micrometers in diameter and 50 micrometers pitch, accompanied by extensive characterisation (SEM and PFIB) of the structural features and aspect ratios. The collaboration with INFN Pisa and Turin enabled us to compare the electrical properties of these detectors and test their performance in their use as electron multipliers in GPDs. Although this R&D work is in its initial stages, it holds promise for enhancing the sensitivity of the IXPE mission in X-ray polarimetry measurements through GEM pattern with more vertical hole profiles. △ Less

Submitted 13 February, 2024; v1 submitted 12 December, 2023; originally announced December 2023.

Comments: IPRD2023 conference

Characterization of iLGADs using soft X-rays

Authors: Antonio Liguori, Rebecca Barten, Filippo Baruffaldi, Anna Bergamaschi, Giacomo Borghi, Maurizio Boscardin, Martin Brückner, Tim Alexander Butcher, Maria Carulla, Matteo Centis Vignali, Roberto Dinapoli, Simon Ebner, Francesco Ficorella, Erik Fröjdh, Dominic Greiffenberg, Omar Hammad Ali, Shqipe Hasanaj, Julian Heymes, Viktoria Hinger, Thomas King, Pawel Kozlowski, Carlos Lopez-Cuenca, Davide Mezza, Konstantinos Moustakas, Aldo Mozzanica , et al. (9 additional authors not shown)

Abstract: Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybri… ▽ More Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybrid detectors. In addition, an optimization of the entrance window of these sensors enhances their quantum efficiency (QE). In this work, the QE and the gain of a batch of different iLGAD diodes with optimized entrance windows were characterized using soft X-rays at the Surface/Interface:Microscopy beamline of the Swiss Light Source synchrotron. Above $250$eV, the QE is larger than $55\%$ for all sensor variations, while the charge collection efficiency is close to $100\%$. The average gain depends on the gain layer design of the iLGADs and increases with photon energy. A fitting procedure is introduced to extract the multiplication factor as a function of the absorption depth of X-ray photons inside the sensors. In particular, the multiplication factors for electron- and hole-triggered avalanches are estimated, corresponding to photon absorption beyond or before the gain layer, respectively. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Comments: 16 pages, 8 figures

Journal ref: Journal of Instrumentation 18, P12006 (2023)

High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors

Authors: R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, M. Costa, G-F. Dalla Betta, M. Ferrero, F. Ficorella, G. Gioachin, L. Lanteri, M. Mandurrino, L. Menzio, R. Mulargia, L. Pancheri, G. Paternoster, A. Rojas, H-F W. Sadrozinski, A. Seiden, F. Siviero, V. Sola, M. Tornago

Abstract: The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sen… ▽ More The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface. △ Less

Submitted 24 November, 2022; originally announced November 2022.

Comments: 28 pages, 23 figures submitted to NIMA

Development of LGAD sensors with a thin entrance window for soft X-ray detection

Authors: Jiaguo Zhang, Rebecca Barten, Filippo Baruffaldi, Anna Bergamaschi, Giacomo Borghi, Maurizio Boscardin, Martin Brueckner, Maria Carulla, Matteo Centis Vignali, Roberto Dinapoli, Simon Ebner, Francesco Ficorella, Erik Froejdh, Dominic Greiffenberg, Omar Hammad Ali, Julian Heymes, Shqipe Hasanaj, Viktoria Hinger, Thomas King, Pawel Kozlowski, Carlos Lopez-Cuenca, Davide Mezza, Konstantinos Moustakas, Aldo Mozzanica, Giovanni Paternoster , et al. (4 additional authors not shown)

Abstract: We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the sof… ▽ More We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452~eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Comments: 10 pages, 6 figures

Quality Control (QC) of FBK Preproduction 3D Si Sensors for ATLAS HL-LHC Upgrades

Authors: D M S Sultan, Md Arif Abdulla Samy, J. X. Ye, M. Boscardin, F. Ficorella, S. Ronchin, G. -F. Dalla Betta

Abstract: The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-… ▽ More The challenging demands of the ATLAS High Luminosity (HL-LHC) Upgrade aim for a complete swap of new generation sensors that should cope with the ultimate radiation hardness. FBK has been one of the prime foundries to develop and fabricate such radiation-hard 3D silicon (Si) sensors. These sensors are chosen to be deployed into the innermost layer of the ATLAS Inner Tracker (ITk). Recently, a pre-production batch of 3D Si sensors of 50x50 um2 pixel geometry, compatible with the full-size ITKPix (RD53B) readout chip, was fabricated. Two wafers holding temporary metal were diced at IZM, Germany, and a systematic QC test campaign was carried out at the University of Trento electronics laboratory. The paper briefly describes the 3D Si sensor design for ATLAS ITk and the required QC characterization setups. It comprises electrical tests (i.e., I-V, C-V, and I-T) of non-irradiated RD53B sensors. In addition, the study of several parametric analyses, i.e., oxide charge density, oxide thickness, inter-pixel resistance, inter-pixel capacitance, etc., are reported with the aid of Process Control Monitor (PCM) structures. △ Less

Submitted 28 September, 2022; v1 submitted 26 September, 2022; originally announced September 2022.

Comments: 8 pages, prepared for iWoRiD 2022 Proceeding

Solid State Detectors and Tracking for Snowmass

Authors: A. Affolder, A. Apresyan, S. Worm, M. Albrow, D. Ally, D. Ambrose, E. Anderssen, N. Apadula, P. Asenov, W. Armstrong, M. Artuso, A. Barbier, P. Barletta, L. Bauerdick, D. Berry, M. Bomben, M. Boscardin, J. Brau, W. Brooks, M. Breidenbach, J. Buckley, V. Cairo, R. Caputo, L. Carpenter, M. Centis-Vignali , et al. (110 additional authors not shown)

Abstract: Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the… ▽ More Tracking detectors are of vital importance for collider-based high energy physics (HEP) experiments. The primary purpose of tracking detectors is the precise reconstruction of charged particle trajectories and the reconstruction of secondary vertices. The performance requirements from the community posed by the future collider experiments require an evolution of tracking systems, necessitating the development of new techniques, materials and technologies in order to fully exploit their physics potential. In this article we summarize the discussions and conclusions of the 2022 Snowmass Instrumentation Frontier subgroup on Solid State and Tracking Detectors (Snowmass IF03). △ Less

Submitted 19 October, 2022; v1 submitted 8 September, 2022; originally announced September 2022.

Comments: for the Snowmass Instrumentation Frontier Solid State Detector and Tracking community

A Compensated Design of the LGAD Gain Layer

Authors: Valentina Sola, Roberta Arcidiacono, Patrick Asenov, Giacomo Borghi, Maurizio Boscardin, Nicolò Cartiglia, Matteo Centis Vignali, Tommaso Croci, Marco Ferrero, Alessandro Fondacci, Giulia Gioachin, Simona Giordanengo, Leonardo Lantieri, Marco Mandurrino, Luca Menzio, Vincenzo Monaco, Arianna Morozzi, Francesco Moscatelli, Daniele Passeri, Nadia Pastrone, Giovanni Paternoster, Federico Siviero, Amedeo Staiano, Marta Tornago

Abstract: In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim… ▽ More In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$. △ Less

Submitted 1 September, 2022; originally announced September 2022.

Comments: Keywords: Silicon sensor, LGAD, Compensation, Compensated LGAD, Gain layer, 4D tracking, Radiation hardness

Journal ref: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 1040, 2022, 167232

Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors

Authors: F. Carnesecchi, S. Strazzi, A. Alici, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, D. Cavazza, G. -F. Dalla Betta, S. Durando, M. Ferrero, F. Ficorella, O. Hammad Ali, M. Mandurrino, A. Margotti, L. Menzio, R. Nania, L. Pancheri, G. Paternoster, G. Scioli, F. Siviero, V. Sola, M. Tornago, G. Vignola

Abstract: This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick… ▽ More This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively. △ Less

Submitted 11 August, 2022; originally announced August 2022.

Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation

Authors: Matias Senger, Ashish Bisht, Giacomo Borghi, Maurizio Boscardin, Matteo Centis Vignali, Federico Ficorella, Omar Hammad Ali, Ben Kilminster, Anna Macchiolo, Giovanni Paternoster

Abstract: The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads… ▽ More The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads are separated by physical trenches etched in the silicon. This technology can reduce the interpixel dead area, mitigating the fill factor problem. The TI-RD50 production studied in this work is the first one of pixelated TI-LGADs. The characterization was performed using a scanning TCT setup with an infrared laser and a $^{90}$Sr source setup. △ Less

Submitted 19 April, 2022; originally announced April 2022.

DC-coupled resistive silicon detectors for 4-D tracking

Authors: L. Menzio, R. Arcidiacono, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, M. Costa, G-F. Dalla Betta, M. Ferrero, F. Ficorella, G. Gioachin, M. Mandurrino, L. Pancheri, G. Paternoster, F. Siviero, V. Sola, M. Tornago

Abstract: In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key feat… ▽ More In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution. △ Less

Submitted 14 April, 2022; originally announced April 2022.

Novel Sensors for Particle Tracking: a Contribution to the Snowmass Community Planning Exercise of 2021

Authors: M. R. Hoeferkamp, S. Seidel, S. Kim, J. Metcalfe, A. Sumant, H. Kagan, W. Trischuk, M. Boscardin, G. -F. Dalla Betta, D. M. S. Sultan, N. T. Fourches, C. Renard, A. Barbier, T. Mahajan, A. Minns, V. Tokranov, M. Yakimov, S. Oktyabrsky, C. Gingu, P. Murat, M. T. Hedges

Abstract: Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent positi… ▽ More Five contemporary technologies are discussed in the context of their potential roles in particle tracking for future high energy physics applications. These include sensors of the 3D configuration, in both diamond and silicon, submicron-dimension pixels, thin film detectors, and scintillating quantum dots in gallium arsenide. Drivers of the technologies include radiation hardness, excellent position, vertex, and timing resolution, simplified integration, and optimized power, cost, and material. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Comments: 15 pages, 6 figures

Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer

Authors: S. M. Mazza, C. Gee, Y. Zhao, R. Padilla, E. Ryan, N. Tournebise, B. Darby, F. McKinney-Martinez, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, M. Boscardin, G. F. Della Betta, F. Ficorella , et al. (2 additional authors not shown)

Abstract: Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and… ▽ More Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and HPK productions that were already reported in precedent papers. The gain layer of HPK sensors was fine-tuned to optimize the performance before and after irradiation. FBK sensors instead combined the benefit of Carbon infusion and deep gain layer to further the radiation hardness of the sensors and reduced the bulk thickness to enhance the timing resolution. The sensor performance was measured in charge collection studies using \b{eta}-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. The collected charge and the timing resolution were measured as a function of bias voltage at -30C. Finally a correlation is shown between the bias voltage to deplete the gain layer and the bias voltage needed to reach a certain amount of gain in the sensor. HPK sensors showed a better performance before irradiation while maintaining the radiation hardness of the previous production. FBK sensors showed exceptional radiation hardness allowing a collected charge up to 10 fC and a time resolution of 40 ps at the maximum fluence. △ Less

Submitted 31 January, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Comments: arXiv admin note: text overlap with arXiv:2004.05260

Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors

Authors: Federico Siviero, Roberta Arcidiacono, Giacomo Borghi, Maurizio Boscardin, Nicolo Cartiglia, Matteo Centis Vignali, Marco Costa, Gian Franco Dalla Betta, Marco Ferrero, Francesco Ficorella, Giulia Gioachin, Marco Mandurrino, Simone Mazza, Luca Menzio, Lucio Pancheri, Giovanni Paternoster, Hartmut F. W. Sadrozinski, Abraham Seiden, Valentina Sola, Marta Tornago

Abstract: In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been… ▽ More In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge. △ Less

Submitted 8 March, 2022; v1 submitted 1 December, 2021; originally announced December 2021.

Comments: v3 revised version as requested by Editor

The second production of RSD (AC-LGAD) at FBK

Authors: M. Mandurrino, R. Arcidiacono, A. Bisht, G. Borghi, M. Boscardin, N. Cartiglia, M. Centis Vignali, G. -F. Dalla Betta, M. Ferrero, F. Ficorella, O. Hammad Ali, A. D. Martinez Rojas, L. Menzio, L. Pancheri, G. Paternoster, F. Siviero, V. Sola, M. Tornago

Abstract: In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a c… ▽ More In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed. △ Less

Submitted 8 June, 2022; v1 submitted 28 November, 2021; originally announced November 2021.

Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors

Authors: B. Darby, S. M. Mazza, F. McKinney-Martinez, R. Padilla, H. F. -W. Sadrozinski, A. Seiden, B. Schumm, M. Wilder, Y. Zhao, R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, V. Cindro, G. Kranberger, I. Mandiz, M. Mikuz, M. Zavtranik, M. Boscardin, G. F. Della Betta, F. Ficorella, L. Pancheri, G. Paternoster

Abstract: Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-pa… ▽ More Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-particles from a 90Sr source. These insensitive "dead zones" are created by a protection structure to avoid breakdown, the Junction Termination Extension (JTE), which separates the pads. The effect of neutron radiation damage at \fluence{1.5}{15}, and \fluence{2.5}{15} on IPDs was studied. These distances are compared to the nominal distances given from the vendor, it was found that the higher fluence corresponds to a better matching of the nominal IPD. △ Less

Submitted 19 September, 2022; v1 submitted 24 November, 2021; originally announced November 2021.

Testing of planar hydrogenated amorphous silicon sensors with charge selective contacts for the construction of 3D- detectors

Authors: M. Menichelli, M. Bizzarri, M. Boscardin, M. Caprai, A. P. Caricato, G. A. P. Cirrone, M. Crivellari, I. Cupparo, G. Cuttone, S. Dunand, L. Fanò, O. Hammad, M. Ionica, K. Kanxheri, M. Large, G. Maruccio, A. G. Monteduro, A. Morozzi, F. Moscatelli, A. Papi, D. Passeri, M. Petasecca, G. Petringa, G. Quarta, S. Rizzato , et al. (7 additional authors not shown)

Abstract: Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two op… ▽ More Hydrogenated Amorphous Silicon (a-Si:H) is a material well known for its intrinsic radiation hardness and is primarily utilized in solar cells as well as for particle detection and dosimetry. Planar p-i-n diode detectors are fabricated entirely by means of intrinsic and doped PECVD of a mixture of Silane (SiH4) and molecular Hydrogen. In order to develop 3D detector geometries using a-Si:H, two options for the junction fabrication have been considered: ion implantation and charge selective contacts through atomic layer deposition. In order to test the functionality of the charge selective contact electrodes, planar detectors have been fabricated utilizing this technique. In this paper, we provide a general overview of the 3D fabrication project followed by the results of leakage current measurements and x-ray dosimetric tests performed on planar diodes containing charge selective contacts to investigate the feasibility of the charge selective contact methodology for integration with the proposed 3D detector architectures. △ Less

Submitted 3 February, 2022; v1 submitted 30 September, 2021; originally announced September 2021.

Comments: Submitted to JINST

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data

Authors: M. Tornago, R. Arcidiacono, N. Cartiglia, M. Costa, M. Ferrero, M. Mandurrino, F. Siviero, V. Sola, A. Staiano, A. Apresyan, K. Di Petrillo, R. Heller, S. Los, G. Borghi, M. Boscardin, G-F Dalla Betta, F. Ficorella, L. Pancheri, G. Paternoster, H. Sadrozinski, A. Seiden

Abstract: This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained v… ▽ More This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the $n^+$ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between $2.5\; μm$ for 70-100 pad-pitch geometry and $17\; μm$ with 200-500 matrices, a factor of 10 better than what is achievable in binary read-out ($bin\; size/ \sqrt{12}$). Beam test data show a temporal resolution of $\sim 40\; ps$ for 200-$μm$ pitch devices, in line with the best performances of LGAD sensors at the same gain. △ Less

Submitted 11 February, 2021; v1 submitted 18 July, 2020; originally announced July 2020.

Comments: 34 pages, 33 figures

MEMS Mirror Manufacturing and Testing for Innovative Space Applications

Authors: A. Bagolini, M. Boscardin, S. Dell'Agnello, G. Delle Monache, M. Di Paolo Emilio, L. Porcelli, L. Salvatori, M. Tibuzzi

Abstract: In the framework of the GLARE-X (Geodesy via LAser Ranging from spacE X) project, led by INFN and funded for the years 2019-2021, aiming at significantly advance space geodesy, one shows the initial activities carried out in 2019 in order to manufacture and test adaptive mirrors. This specific article deals with manufacturing and surface quality measurements of the passive substrate of 'candidate'… ▽ More In the framework of the GLARE-X (Geodesy via LAser Ranging from spacE X) project, led by INFN and funded for the years 2019-2021, aiming at significantly advance space geodesy, one shows the initial activities carried out in 2019 in order to manufacture and test adaptive mirrors. This specific article deals with manufacturing and surface quality measurements of the passive substrate of 'candidate' MEMS (Micro-Electro-Mechanical Systems) mirrors for MRRs (Modulated RetroReflectors); further publications will show the active components. The project GLARE-X was approved by INFN for the years 2019-2021: it involves several institutions, including, amongst the other, INFN-LNF and FBK. GLARE-X is an innovative R&D activity, whose at large space geodesy goals will concern the following topics: inverse laser ranging (from a laser terminal in space down to a target on a planet), laser ranging for debris removal and iterative orbit correction, development of high-end ToF (Time of Flight) electronics, manufacturing and testing of MRRs for space, and provision of microreflectors for future NEO (Near Earth Orbit) cubesats. This specific article summarizes the manufacturing and surface quality measurements activities performed on the passive substrate of 'candidate' MEMS mirrors, which will be in turn arranged into MRRs. The final active components, to be realized by 2021, will inherit the manufacturing characteristics chosen thanks to the presented (and further) testing campaigns, and will find suitable space application to NEO, Moon, and Mars devices, like, for example, cooperative and active lidar scatterers for laser altimetry and lasercomm support. △ Less

Submitted 15 June, 2020; originally announced June 2020.

Comments: 9 pages, 5 figures

Intrinsic time resolution of 3D-trench silicon pixels for charged particle detection

Authors: Lucio Anderlini, Mauro Aresti, Andrea Bizzeti, Maurizio Boscardin, Alessandro Cardini, Gian-Franco Dalla Betta, Marco Ferrero, Giulio Forcolin, Michela Garau, Adriano Lai, Andrea Lampis, Angelo Loi, Chiara Lucarelli, Roberto Mendicino, Roberto Mulargia, Margherita Obertino, Enrico Robutti, Sabina Ronchin, Marta Ruspa, Stefania Vecchi

Abstract: In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50$μ$m are typical minimum requirements. This poses an important scientific and technological… ▽ More In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50$μ$m are typical minimum requirements. This poses an important scientific and technological challenge on the development of particle sensors and processing electronics. The TIMESPOT initiative (which stands for TIME and SPace real-time Operating Tracker) aims at the development of a full prototype detection system suitable for the particle trackers of the next-to-come particle physics experiments. This paper describes the results obtained on the first batch of TIMESPOT silicon sensors, based on a novel 3D MEMS (micro electro-mechanical systems) design. Following this approach, the performance of other ongoing silicon sensor developments has been matched and overcome, while using a technology which is known to be robust against radiation degradation. A time resolution of the order of 20ps has been measured at room temperature suggesting also possible improvements after further optimisations of the front-end electronics processing stage. △ Less

Submitted 29 July, 2020; v1 submitted 22 April, 2020; originally announced April 2020.

Comments: This version was accepted to be published on JINST on 21/07/2020

Silicon Sensors for Future Particle Trackers

Authors: N. Cartiglia, R. Arcidiacono, G. Borghi, M. Boscardin, M. Costa, Z. Galloway, F. Fausti, M. Ferrero, F. Ficorella, M. Mandurrino, S. Mazza, E. J. Olave, G. Paternoster, F. Siviero, H. F-W. Sadrozinski, V. Sola, A. Staiano, A. Seiden, M. Tornago, Y. Zhao

Abstract: Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, sc… ▽ More Several future high-energy physics facilities are currently being planned. The proposed projects include high energy $e^+ e^-$ circular and linear colliders, hadron colliders and muon colliders, while the Electron-Ion Collider (EIC) has already been approved for construction at the Brookhaven National Laboratory. Each proposal has its own advantages and disadvantages in term of readiness, cost, schedule and physics reach, and each proposal requires the design and production of specific new detectors. This paper first presents the performances required to the future silicon tracking systems at the various new facilities, and then it illustrates a few possibilities for the realization of such silicon trackers. The challenges posed by the future facilities require a new family of silicon detectors, where features such as impact ionization, radiation damage saturation, charge sharing, and analog readout are exploited to meet these new demands. △ Less

Submitted 31 March, 2020; originally announced March 2020.

High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)

Authors: M. Mandurrino, N. Cartiglia, M. Tornago, M. Ferrero, F. Siviero, G. Paternoster, F. Ficorella, M. Boscardin, L. Pancheri, G. F. Dalla Betta

Abstract: In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain A… ▽ More In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-level scale in the track reconstruction. This is essentially due to the absence of any segmentation structure between pads (100% fill-factor) and to other two innovative key-features: the first one is a properly doped n+ resistive layer, slowing down the charges just after being multiplied, and the second one is a dielectric layer grown on Silicon, inducing a capacitive coupling on the metal pads deposited on top of the detector. The very good spatial resolution (micron-level) we measured experimentally - higher than the nominal pad pitch - comes from the analogical nature of the readout of signals, whose amplitude attenuates from the pad center to its periphery, while the outstanding results in terms of timing (less than 14 ps, even better than standard LGAD) are due to a combination of very-fine pitch, analogical response and charge multiplication. △ Less

Submitted 24 March, 2020; v1 submitted 10 March, 2020; originally announced March 2020.

Hydrogenated amorphous silicon detectors for particle detection, beam flux monitoring and dosimetry in high-dose radiation environment

Authors: Mauro Menichelli, Maurizio Boscardin, Michele Crivellari, Jeremy Davis, Silvan Dunand, Livio Fanò, Arianna Morozzi, Francesco Moscatelli, Maria Movileanu-Ionica, Daniele Passeri, Marco Petasecca, Mauro Piccini, Alessandro Rossi, Andrea Scorzoni, Leonello Servoli, Giovanni Verzellesi, Nicolas Wyrsch

Abstract: Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However MIP detection using planar structures has always been problematic due to the po… ▽ More Hydrogenated amorphous silicon (a-Si:H) has remarkable radiation resistance properties and can be deposited on a lot of different substrates. A-Si:H based particle detectors have been built since mid 1980s as planar p-i-n or Schottky diode structures; the thickness of these detectors ranged from 1 to 50 micron. However MIP detection using planar structures has always been problematic due to the poor S/N ratio related to the high leakage current at high depletion voltage and the low charge collection efficiency. The usage of 3D detector architecture can be beneficial for the possibility to reduce inter-electrode distance and increase the thickness of the detector for larger charge generation compared to planar structures. Such a detector can be used for future hadron colliders for its radiation resistance and also for X-ray imaging. Furthermore the possibility of a-Si:H deposition on flexible materials (like kapton) can be exploited to build flexible and thin beam flux measurement detectors and x-ray dosimeters. △ Less

Submitted 25 February, 2020; originally announced February 2020.

Comments: 10 pages 5 figures, 1 table

First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking

Authors: M. Mandurrino, R. Arcidiacono, M. Boscardin, N. Cartiglia, G. F. Dalla Betta, M. Ferrero, F. Ficorella, L. Pancheri, G. Paternoster, F. Siviero, M. Tornago

Abstract: We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We s… ▽ More We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices. △ Less

Submitted 23 September, 2019; v1 submitted 7 July, 2019; originally announced July 2019.

Results on Proton-Irradiated 3D Pixel Sensors Interconnected to RD53A Readout ASIC

Authors: Jordi Duarte-Campderros, Esteban Curras, Marcos Fernandez, Gervasio Gomez, Andrea Garcia, Javier Gonzalez, Esther Silva, Ivan Vila, Richard Jaramillo, Marco Meschini, Rudy Ceccarelli, Mauro Dinardo, Simone Gennai, Luigi Moroni, Davide Zuolo, Natale Demaria, Ennio Monteil, Luigi Gaioni, Alberto Messineo, Gian-Franco Dalla Beta, Roberto Menicino, Maurizio Boscardin

Abstract: Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about $1$ $\times$ $10^{16}$ $\text{n}_{\text{eq}}$ cm$^{-2}$ (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3… ▽ More Test beam results obtained with 3D pixel sensors bump-bonded to the RD53A prototype readout ASIC are reported. Sensors from FBK (Italy) and IMB-CNM (Spain) have been tested before and after proton-irradiation to an equivalent fluence of about $1$ $\times$ $10^{16}$ $\text{n}_{\text{eq}}$ cm$^{-2}$ (1 MeV equivalent neutrons). This is the first time that one single collecting electrode fine pitch 3D sensors are irradiated up to such fluence bump-bonded to a fine pitch ASIC. The preliminary analysis of the collected data shows no degradation on the hit detection efficiencies of the tested sensors after high energy proton irradiation, demonstrating the excellent radiation tolerance of the 3D pixel sensors. Thus, they will be excellent candidates for the extreme radiation environment at the innermost layers of the HL-LHC experiments. △ Less

Submitted 29 August, 2019; v1 submitted 29 March, 2019; originally announced March 2019.

Comments: Conference Proceedings of VCI2019, 15th Vienna Conference of Instrumentation, February 18-22, 2019, Vienna, Austria. arXiv admin note: text overlap with arXiv:1903.01963

Journal ref: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 944, 2019, 162625, ISSN 0168-9002

First Results on 3D Pixel Sensors Interconnected to the RD53A Readout Chip after Irradiation to $1\times$$10^{16}$neq cm$^{-2}$

Authors: M. Meschini, R. Ceccarelli, M. Dinardo, S. Gennai, L. Moroni, D. Zuolo, L. Demaria, E. Monteil, L. Gaioni, A. Messineo, E. Curras, J. Duarte, M. Fernandez, G. Gomez, A. Garcia, J. Gonzalez, E. Silva, I. Vila, G. F. Dalla Betta, R. Mendicino, M. Boscardin

Abstract: Results obtained with 3D columnar pixel sensors bump-bonded to the RD53A prototype readout chip are reported. The interconnected modules have been tested in a hadron beam before and after irradiation to a fluence of about $1\times$$10^{16}$neq cm$^{-2}$ (1MeV equivalent neutrons). All presented results are part of the CMS R&D activities in view of the pixel detector upgrade for the High Luminosity… ▽ More Results obtained with 3D columnar pixel sensors bump-bonded to the RD53A prototype readout chip are reported. The interconnected modules have been tested in a hadron beam before and after irradiation to a fluence of about $1\times$$10^{16}$neq cm$^{-2}$ (1MeV equivalent neutrons). All presented results are part of the CMS R&D activities in view of the pixel detector upgrade for the High Luminosity phase of the LHC at CERN (HL-LHC). A preliminary analysis of the collected data shows hit detection efficiencies around 97% measured after proton irradiation. △ Less

Submitted 5 March, 2019; originally announced March 2019.

Comments: Conference Proceedings of PIXEL2018, 9$^{\text{th}}$ International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, December 10-14, 2018, Academia Sinica, Taipei

Performance of Thin Planar \textit{n-on-p} silicon pixels after HL-LHC radiation fluences

Authors: A. Ducourthial, M. Bomben, G. Calderini, R. Camacho, L. D'Eramo, I. Luise, G. Marchiori, M. Boscardin, L. Bosisio, G. Darbo, G. -F. Dalla Betta, G. Giacomini, M. Meschini, A. Messineo, S. Ronchin, N. Zorzi

Abstract: The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while deliverin… ▽ More The tracking detector of ATLAS, one of the experiments at the Large Hadron Collider (LHC), will be upgraded in 2024-2026 to cope with the challenging environment conditions of the High Luminosity LHC (HL-LHC). The LPNHE, in collaboration with FBK and INFN, has produced 130~$μ$m thick $n-on-p$ silicon pixel sensors which can withstand the expected large particle fluences at HL- LHC, while delivering data at high rate with excellent hit efficiency. Such sensors were tested on beam before and after irradiation both at CERN-SPS and at DESY, and their performances are presented in this paper. Beam test data indicate that these detectors are suited for all the layers where planar sensors are foreseen in the future ATLAS tracker: hit-efficiency is greater than 97\% for fluences $Φ\lesssim 7\times10^{15}\rm{n_{eq}/cm^2}$ and module power consumption is within the specified limits. Moreover, at a fluence $Φ= 1.3\times10^{16}\rm{n_{eq}/cm^2}$, hit-efficiency is still as high as 88\% and charge collection efficiency is about 30\%. △ Less

Submitted 5 September, 2019; v1 submitted 16 October, 2018; originally announced October 2018.

Comments: 24 pages, 14 figures, published version

Characterization of FBK small-pitch 3D diodes after neutron irradiation up to 3.5x10**16 neq cm**-2

Authors: Roberto Mendicino, Maurizio Boscardin, Gian-Franco Dalla Betta

Abstract: We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5x10**16 neq cm**-2. We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effec… ▽ More We report on the characterization by a position resolved laser system of small-pitch 3D diodes irradiated with neutrons up to an extremely high fluence of 3.5x10**16 neq cm**-2. We show that very high values of signal efficiency are obtained, in good agreement with the geometrical expectation based on the small values of the inter-electrode spacings, and also boosted by charge multiplication effects at high voltage. These results confirm the very high radiation tolerance of small-pitch 3D sensors well beyond the maximum fluences expected at the High Luminosity LHC. △ Less

Submitted 13 October, 2018; originally announced October 2018.

Comments: 10 pages, 7 figures, submitted to Proceedings of IWORID 2018 on JINST

Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2

Authors: S. M. Mazza, E. Estrada, Z. Galloway, C. Gee, A. Goto, Z. Luce, F. McKinney-Martinez, R. Rodriguez, H. F. -W. Sadrozinski, A. Seiden, B. Smithers, Y. Zhao, V. Cindro, G. Kramberger, I. Mandić, M. Mikuž, M. Zavrtanik R. Arcidiacono, N. Cartiglia, M. Ferrero, M. Mandurrino, V. Sola, A. Staiano, M. Boscardin, G. F. Della Betta, F. Ficorella , et al. (2 additional authors not shown)

Abstract: The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiati… ▽ More The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. △ Less

Submitted 18 March, 2020; v1 submitted 15 April, 2018; originally announced April 2018.

Comments: arXiv admin note: text overlap with arXiv:1803.02690

First FBK Production of 50$μ$m Ultra-Fast Silicon Detectors

Authors: V. Sola, R. Arcidiacono, M. Boscardin, N. Cartiglia, G. -F. Dalla Betta, F. Ficorella, M. Ferrero, M. Mandurrino, L. Pancheri, G. Paternoster, A. Staiano

Abstract: Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multi… ▽ More Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $φ\sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production. △ Less

Submitted 6 October, 2018; v1 submitted 12 February, 2018; originally announced February 2018.

Comments: 16 pages, 13 figures, 11th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD11) in conjunction with 2nd Workshop on SOI Pixel Detectors (SOIPIX2017) at OIST, Okinawa, Japan, Nuclear Instruments and Methods in Physics Research A (2018)

Radiation resistant LGAD design

Authors: M. Ferrero, R. Arcidiacono, M. Barozzi, M. Boscardin, N. Cartiglia, G. F. Dalla Betta, Z. Galloway, M. Mandurrino, S. Mazza, G. Paternoster, F. Ficorella, L. Pancheri, H-F W. Sadrozinski, V. Sola, A. Staiano, A. Seiden, F. Siviero, M. Tornago, Y. Zhao

Abstract: In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations of the gain layer. LGAD detectors with gain layer doping of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to ne… ▽ More In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different doping combinations of the gain layer. LGAD detectors with gain layer doping of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to $φ_n \sim 3 \cdot 10^{16}\; n/cm^2$ and to proton fluences up to $φ_p \sim 9\cdot10^{15}\; p/cm^2$ to test their radiation resistance. The experimental results show that Gallium-doped LGADs are more heavily affected by initial acceptor removal than Boron-doped LGAD, while the presence of Carbon reduces initial acceptor removal both for Gallium and Boron doping. Boron low-diffusion shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant width. This study also demonstrates that proton irradiation is at least twice more effective in producing initial acceptor removal, making proton irradiation far more damaging than neutron irradiation. △ Less

Submitted 31 August, 2018; v1 submitted 5 February, 2018; originally announced February 2018.

Comments: 22 pages, 17 figures

Thin and edgeless sensors for ATLAS pixel detector upgrade

Authors: Audrey Ducourthial, Marco Bomben, Giovanni Calderini, Louis D'Eramo, Giovanni Marchiori, Ilaria Luise, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Darbo, Gian-Franco Dalla Betta, Gabriele Giacomini, Marco Meschini, Alberto Messineo, Sabina Ronchin, Nicola Zorzi

Abstract: To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is mi… ▽ More To cope with the harsh environment foreseen at the high luminosity conditions of HL- LHC, the ATLAS pixel detector has to be upgraded to be fully efficient with a good granularity, a maximized geometrical acceptance and an high read out rate. LPNHE, FBK and INFN are involved in the development of thin and edgeless planar pixel sensors in which the insensitive area at the border of the sensor is minimized thanks to the active edge technology. In this paper we report on two productions, a first one consisting of 200 μm thick n-on-p sensors with active edge, a second one composed of 100 and 130 μm thick n-on-p sensors. Those sensors have been tested on beam, both at CERN-SPS and at DESY and their performance before and after irradiation will be presented. △ Less

Submitted 10 October, 2017; originally announced October 2017.

Comments: 10 pages, 7 figures, to appear in the proceedings of the PSD11 conference, 3th-8th September 2017, Open University (Milton Keynes)

Performance of active edge pixel sensors

Authors: Marco Bomben, Audrey Ducourthial, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Louis D'Eramo, Gabriele Giacomini, Giovanni Marchiori, Nicola Zorzi, André Rummler, Jens Weingarten

Abstract: To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin… ▽ More To cope with the High Luminosity LHC harsh conditions, the ATLAS inner tracker has to be upgraded to meet requirements in terms of radiation hardness, pile up and geometrical acceptance. The active edge technology allows to reduce the insensitive area at the border of the sensor thanks to an ion etched trench which avoids the crystal damage produced by the standard mechanical dicing process. Thin planar n-on-p pixel sensors with active edge have been designed and produced by LPNHE and FBK foundry. Two detector module prototypes, consisting of pixel sensors connected to FE-I4B readout chips, have been tested with beams at CERN and DESY. In this paper the performance of these modules are reported. In particular the lateral extension of the detection volume, beyond the pixel region, is investigated and the results show high hit-efficiency also at the detector edge, even in presence of guard rings. △ Less

Submitted 4 April, 2017; v1 submitted 6 February, 2017; originally announced February 2017.

Comments: 14 pages, 11 figures

Journal ref: JINST 12 P05006 (2017)

First Production of New Thin 3D Sensors for HL-LHC at FBK

Authors: DMS Sultan, Gian-Franco Dalla Betta, Roberto Mendicino, Maurizio Boscardin, Sabina Ronchin, Nicola Zorzi

Abstract: Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of… ▽ More Owing to their intrinsic (geometry dependent) radiation hardness, 3D pixel sensors are promising candidates for the innermost tracking layers of the forthcoming experiment upgrades at the Phase 2 High-Luminosity LHC (HL-LHC). To this purpose, extreme radiation hardness up to the expected maximum fluence of 2e16 neq.cm-2 must come along with several technological improvements in a new generation of 3D pixels, i.e., increased pixel granularity (50x50 or 25x100 um2 cell size), thinner active region (~100 um), narrower columnar electrodes (~5 um diameter) with reduced inter-electrode spacing (~30 um), and very slim edges (~100 um). The fabrication of the first batch of these new 3D sensors was recently completed at FBK on Si-Si direct wafer bonded 6-inch substrates. Initial electrical test results, performed at wafer level on sensors and test structures, highlighted very promising performance, in good agreement with TCAD simulations: low leakage current (<1 pA/column), intrinsic breakdown voltage of more than 150 V, capacitance of about 50 fF/column, thus assessing the validity of the design approach. A large variety of pixel sensors compatible with both existing (e.g., ATLAS FEI4 and CMS PSI46) and future (e.g., RD53) read-out chips were fabricated, that were also electrically tested on wafer using a temporary metal layer patterned as strips shorting rows of pixels together. This allowed a statistically significant distribution of the relevant electrical quantities to be obtained, thus gaining insight into the impact of process-induced defects. A few 3D strip test structures were irradiated with X-rays, showing inter-strip resistance of at least several GOhm even after 50 Mrad(Si) dose, thus proving the p-spray robustness. We present the most important design and technological aspects, and results obtained from the initial investigations. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: 8 pages, 7 figures, 2016 IWORID

The INFN-FBK Phase-2 R{\&}D Program

Authors: Gian-Franco Dalla Betta, Maurizio Boscardin, Marco Bomben, Mirko Brianzi, Giovanni Calderini, Giovanni Darbo, Roberto Dell Orso, Andrea Gaudiello, Gabriele Giacomini, Roberto Mendicino, Marco Meschini, Alberto Messineo, Sabina Ronchin, D M S Sultan, Nicola Zorzi

Abstract: We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radia… ▽ More We report on the 3-year INFN ATLAS-CMS joint research activity in collaboration with FBK, started in 2014, and aimed at the development of new thin pixel detectors for the High Luminosity LHC Phase-2 upgrades. The program is concerned with both 3D and planar active-edge pixel sensors to be made on 6-inch p-type wafers. The technology and the design will be optimized and qualified for extreme radiation hardness (2e16 neq cm-2). Pixel layouts compatible with present (for testing) and future (RD53 65nm) front-end chips of ATLAS and CMS are considered. The paper covers the main aspects of the research program, from the sensor design and fabrication technology, to the results of initial tests performed on the first prototypes. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: 4 pages, 7 figures, 2015 Pisa Meeting

Development of a new generation of 3D pixel sensors for HL-LHC

Authors: Gian-Franco Dalla Betta, Maurizio Boscardin, Giovanni Darbo, Roberto Mendicino, Marco Meschini, Alberto Messineo, Sabina Ronchin, DMS Sultan, Nicola Zorzi

Abstract: This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades. This paper covers the main technological and design aspects relevant to the development of a new generation of thin 3D pixel sensors with small pixel size aimed at the High-Luminosity LHC upgrades. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: 2 pages, 3 figures, 2015 Pisa Meeting

Development of New 3D Pixel Sensors for Phase 2 Upgrades at LHC

Authors: Gian-Franco Dalla Betta, Maurizio Boscardin, Roberto Mendicino, Sabina Ronchin, DMS Sultan, Nicola Zorzi

Abstract: We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considere… ▽ More We report on the development of new 3D pixel sensors for the Phase 2 Upgrades at the High-Luminosity LHC (HL-LHC). To cope with the requirements of increased pixel granularity (e.g., 50x50 or 25x100 um2 pixel size) and extreme radiation hardness (up to a fluence of 2e16 neq cm-2), thinner 3D sensors (~100 um) with electrodes having narrower size (~ 5 um) and reduced spacing (~ 30 um) are considered. The paper covers TCAD simulations, as well as technological and design aspects relevant to the first batch of these 3D sensors, that is currently being fabricated at FBK on 6-inch wafers. △ Less

Submitted 2 December, 2016; originally announced December 2016.

Comments: 4 pages, 8 figures, 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference

Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors

Authors: F. Moscatelli, P. Maccagnani, D. Passeri, G. M. Bilei, L. Servoli, A. Morozzi, G. -F. Dalla Betta, R. Mendicino, M. Boscardin, N. Zorzi

Abstract: In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements… ▽ More In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulation of radiation detectors at very high fluences (e.g. 1÷2 10^16 1-MeV equivalent neutrons per square centimeter) combined with a surface damage model developed by using experimental parameters extracted from measurements from gamma irradiated p-type dedicated test structures. △ Less

Submitted 30 November, 2016; originally announced November 2016.

Comments: 6 pages,12 figures. arXiv admin note: text overlap with arXiv:1611.10138

Journal ref: 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC)

Performance of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Authors: Marco Bomben, Alvise Bagolini, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Jacques Chauveau, Audrey Ducourthial, Gabriele Giacomini, Giovanni Marchiori, Nicola Zorzi

Abstract: In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel senso… ▽ More In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate to achieve a large area instrumented with pixel sensors, since it is radiation hard and cost effective. The paper reports on the performance of novel n-on-p edgeless planar pixel sensors produced by FBK-CMM, making use of the active trench for the reduction of the dead area at the periphery of the device. After discussing the sensor technology an overview of the first beam test results will be given. △ Less

Submitted 7 September, 2016; originally announced September 2016.

Comments: 4 pages, 9 figures, conference record of 2015 IEEE NSS, San Diego (CA), 31/10-7/11/2015

Testbeam and Laboratory Characterization of CMS 3D Pixel Sensors

Authors: M. Bubna, E. Alagoz, A. Krzywda, O. Koybasi, K. Arndt, D. Bortoletto, I. Shipsey, G. Bolla, A. Kok, T. -E. Hansen, T. A. Hansen, G. U. Jensen, J. M. Brom, M. Boscardin, J. Chramowicz, J. Cumalat, G. F. Dalla Betta, M. Dinardo, A. Godshalk, M. Jones, M. D. Krohn, A. Kumar, C. M. Lei, L. Moroni, L. Perera , et al. (10 additional authors not shown)

Abstract: The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration… ▽ More The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase in luminosity expected with the High- Luminosity LHC (HL-LHC) phase. As a possible replacement for planar sensors, 3D silicon technology is under consideration due to its good performance after high radiation fluence. In this paper, we report on pre- and post- irradiation measurements for CMS 3D pixel sensors with different electrode configurations. The effects of irradiation on electrical properties, charge collection efficiency, and position resolution of 3D sensors are discussed. Measurements of various test structures for monitoring the fabrication process and studying the bulk and surface properties, such as MOS capacitors, planar and gate-controlled diodes are also presented. △ Less

Submitted 30 April, 2014; v1 submitted 25 February, 2014; originally announced February 2014.

Comments: 14 pages

Selected results from the static characterization of edgeless n-on-p planar pixel sensors for ATLAS upgrades

Authors: Gabriele Giacomini, Alvise Bagolini, Marco Bomben, Maurizio Boscardin, Luciano Bosisio, Giovanni Calderini, Jacques Chauveau, Alessandro La Rosa, Giovanni Marchiori, Nicola Zorzi

Abstract: In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATL… ▽ More In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-on-p technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. There is also the demand to reduce the inactive areas to a minimum. The ATLAS LPNHE Paris group and FBK Trento started a collaboration for the development on a novel n-on-p edgeless planar pixel design, based on the deep-trench process which can cope with all these demands. This paper reports selected results from the electrical characterization, both before and after irradiation, of test structures from the first production batch. △ Less

Submitted 2 December, 2013; originally announced December 2013.

Comments: 10 pages, 8 figures, proceedings of the conference IPRD13, Siena (Italy)

Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar… ▽ More In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined. △ Less

Submitted 15 November, 2013; originally announced November 2013.

Comments: 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear Science Symposium and Medical Imaging Conference. arXiv admin note: text overlap with arXiv:1311.1628

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar… ▽ More In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given. △ Less

Submitted 7 November, 2013; originally announced November 2013.

Comments: 9 pages, 9 figures, to appear in the proceedings of the 15th International Workshops on Radiation Imaging Detectors

Development of Edgeless Silicon Pixel Sensors on p-type substrate for the ATLAS High-Luminosity Upgrade

Authors: G. Calderini, A. Bagolini, M. Bomben, M. Boscardin, L. Bosisio, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchiori, N. Zorzi

Abstract: In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to… ▽ More In view of the LHC upgrade for the High Luminosity Phase (HL-LHC), the ATLAS experiment is planning to replace the Inner Detector with an all-Silicon system. The n-in-p bulk technology represents a valid solution for the modules of most of the layers, given the significant radiation hardness of this option and the reduced cost. The large area necessary to instrument the outer layers will demand to tile the sensors, a solution for which the inefficient region at the border of each sensor needs to be reduced to the minimum size. This paper reports on a joint R&D project by the ATLAS LPNHE Paris group and FBK Trento on a novel n-in-p edgeless planar pixel design, based on the deep-trench process available at FTK. △ Less

Submitted 21 October, 2013; originally announced October 2013.

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector

Authors: S. Grinstein, M. Baselga, M. Boscardin, M. Christophersen, C. Da Via, G. -F. Dalla Betta, G. Darbo, V. Fadeyev, C. Fleta, C. Gemme, P. Grenier, A. Jimenez, I. Lopez, A. Micelli, C. Nellist, S. Parker, G. Pellegrini, B. Phlips, D. -L. Pohl, H. F. -W. Sadrozinski, P. Sicho, S. Tsiskaridze

Abstract: Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertab… ▽ More Pixel detectors with cylindrical electrodes that penetrate the silicon substrate (so called 3D detectors) offer advantages over standard planar sensors in terms of radiation hardness, since the electrode distance is decoupled from the bulk thickness. In recent years significant progress has been made in the development of 3D sensors, which culminated in the sensor production for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM (Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLAS Forward Physics (AFP) experiment has selected the 3D pixel sensor technology for the tracking detector. The AFP project presents a new challenge due to the need for a reduced dead area with respect to IBL, and the in-homogeneous nature of the radiation dose distribution in the sensor. Electrical characterization of the first AFP prototypes and beam test studies of 3D pixel devices irradiated non-uniformly are presented in this paper. △ Less

Submitted 21 April, 2015; v1 submitted 21 February, 2013; originally announced February 2013.

Comments: RESMDD12 Proceedings, preprint submitted to Nuclear Instruments and Methods A

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar p… ▽ More In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown. △ Less

Submitted 15 February, 2013; v1 submitted 14 December, 2012; originally announced December 2012.

Comments: 6 pages, 5 figures, to appear in the proceedings of the 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Devices

Development of Edgeless n-on-p Planar Pixel Sensors for future ATLAS Upgrades

Authors: M. Bomben, A. Bagolini, M. Boscardin, L. Bosisio, G. Calderini, J. Chauveau, G. Giacomini, A. La Rosa, G. Marchori, N. Zorzi

Abstract: The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably d… ▽ More The development of n-on-p "edgeless" planar pixel sensors being fabricated at FBK (Trento, Italy), aimed at the upgrade of the ATLAS Inner Detector for the High Luminosity phase of the Large Hadron Collider (HL-LHC), is reported. A characterizing feature of the devices is the reduced dead area at the edge, achieved by adopting the "active edge" technology, based on a deep etched trench, suitably doped to make an ohmic contact to the substrate. The project is presented, along with the active edge process, the sensor design for this first n-on-p production and a selection of simulation results, including the expected charge collection efficiency after radiation fluence of $1 \times 10^{15} {\rm n_{eq}}/{\rm cm}^2$ comparable to those expected at HL-LHC (about ten years of running, with an integrated luminosity of 3000 fb$^{-1}$) for the outer pixel layers. We show that, after irradiation and at a bias voltage of 500 V, more than 50% of the signal should be collected in the edge region; this confirms the validity of the active edge approach. △ Less

Submitted 18 February, 2013; v1 submitted 22 November, 2012; originally announced November 2012.

Comments: 20 pages, 9 figures, submitted to Nucl. Instr. and Meth. A

Characterization of proton irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Authors: A. La Rosa, M. Boscardin, M. Cobal, G. -F. Dalla Betta, C. Da Via, G. Darbo, C. Gallrapp, C. Gemme, F. Huegging, J. Janssen, A. Micelli, H. Pernegger, M. Povoli, N. Wermes, N. Zorzi

Abstract: In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laborato… ▽ More In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. Some assemblies of these sensors featuring different columnar electrode configurations (2, 3, or 4 columns per pixel) and coupled to the ATLAS FEI3 read-out chip were irradiated up to large proton fluences and tested in laboratory with radioactive sources. In spite of the non optimized columnar electrode overlap, sensors exhibit reasonably good charge collection properties up to an irradiation fluence of 2 x 10**15 neq/cm2, while requiring bias voltages in the order of 100 V. Sensor operation is further investigated by means of TCAD simulations which can effectively explain the basic mechanisms responsible for charge loss after irradiation. △ Less

Submitted 19 March, 2012; v1 submitted 13 December, 2011; originally announced December 2011.

Comments: Preprint submitted to Nuclear Instruments and Methods A, 11 pages, 13 figs

Journal ref: Nucl. Instrum. Meth. A681 (2012) 25

Functional characterization of irradiated 3D-DDTC pixel sensor prototypes fabricated at FBK

Authors: A. La Rosa, M. Boscardin, M. Cobal, C. Da Viá, G. F. Dalla Betta, G. Darbo, C. Gallrapp, C. Gemme, F. Huegging, J. Janssen, A. Micelli, H. Pernegger, M. Povoli, N. Wermes, N. Zorzi

Abstract: In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. In this paper we discuss results relevant to 3D Double-Side Double Type Column (3D-DDTC) pixel sensors fabricated at FBK (Trento, Italy) and oriented to the ATLAS upgrade. △ Less

Submitted 9 December, 2011; v1 submitted 25 August, 2011; originally announced August 2011.

Comments: This paper has been withdrawn by the author due to an update of some results

Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade

Authors: ATLAS 3D Collaboration, P. Grenier, G. Alimonti, M. Barbero, R. Bates, E. Bolle, M. Borri, M. Boscardin, C. Buttar, M. Capua, M. Cavalli-Sforza, M. Cobal, A. Cristofoli, G-F. Dalla Betta, G. Darbo, C. Da Vià, E. Devetak, B. DeWilde, B. Di Girolamo, D. Dobos, K. Einsweiler, D. Esseni, S. Fazio, C. Fleta, J. Freestone , et al. (68 additional authors not shown)

Abstract: Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sen… ▽ More Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance. △ Less

Submitted 21 January, 2011; originally announced January 2011.

Journal ref: Nucl.Instrum.Meth.A638:33-40,2011

Characterization of 3D-DDTC detectors on p-type substrates

Authors: G. -F. Dalla Betta, M. Boscardin, L. Bosisio, G. Darbo, P. Gabos, C. Gemme, M. Koehler, A. La Rosa, U. Parzefall, H. Pernegger, C. Piemonte, M. Povoli, I. Rachevskaia, S. Ronchin, L. Wiik, A. Zoboli, N. Zorzi

Abstract: We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors. We report on the electrical and functional characterization of 3D Double-side, Double-Type-Column (3D- DDTC) detectors fabricated on p-type substrates. Results relevant to detectors in the diode, strip and pixel configurations are presented, and demonstrate a clear improvement in the charge collection performance compared to the first prototypes of these detectors. △ Less

Submitted 25 November, 2009; originally announced November 2009.

Comments: 8 pages, 14 figures, presented at IEEE-NSS Conference 2009, Hilton Disney World, Orlando, Florida 25-31 October 2009