-
Testbeam analysis of biasing structures for irradiated hybrid pixel detectors
Authors:
Craig M. Buttar,
Yanyan Gao,
Ricardo González López,
Dzmitry Maneuski,
Emily Pender,
Quake Qin,
Adam G. Rennie,
Matthew Sullivan,
Jon T. Taylor,
Kenneth Wraight
Abstract:
Following the Phase-II upgrade during Long Shutdown (LS3), the LHC aims to reach a peak instantaneous luminosity of $7.5\times 10^{34}$cm$^{-2}$s$^{-1}$, which corresponds to an average of around 200 inelastic proton-proton collisions per beam-crossing (every 25 ns). To cope with these conditions, the ATLAS Inner Detector will be replaced by a new all-silicon system -- the Inner Tracker (ITk). The…
▽ More
Following the Phase-II upgrade during Long Shutdown (LS3), the LHC aims to reach a peak instantaneous luminosity of $7.5\times 10^{34}$cm$^{-2}$s$^{-1}$, which corresponds to an average of around 200 inelastic proton-proton collisions per beam-crossing (every 25 ns). To cope with these conditions, the ATLAS Inner Detector will be replaced by a new all-silicon system -- the Inner Tracker (ITk). The ITk will be operational for more than ten years, during which time ATLAS is expected to record approximately 4000 fb$^{-1}$ of data. The ITk's pixel sub-system is based on hybrid pixel modules with new silicon sensors and readout chips. These studies focus on testbeam campaigns undertaken to study the spatial resolution and efficiencies of hybrid pixel detector modules based on the first large-structure prototype front-end readout chip -- the RD53A -- using planar silicon sensors. These devices have been irradiated to replicate the effect of the high radiation environment present during operation in the ATLAS detector. Results for devices using sensors with different punch-through bias structures and using different readout chips are summarised. Those with sensors incorporating a punch-through bias structure are found to exhibit systematically lower efficiency than those without, as a result of local areas of relative inefficiency around the punch-through dots. Despite this, all devices measured are found to satisfy the requirement of 97% efficiency at $V_\mathrm{bias}=400$ V after being irradiated to end-of-life fluence.
△ Less
Submitted 5 March, 2024;
originally announced March 2024.
-
Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates
Authors:
Milou van Rijnbach,
Dumitru Vlad Berlea,
Valerio Dao,
Martin Gaži,
Phil Allport,
Ignacio Asensi Tortajada,
Prafulla Behera,
Daniela Bortoletto,
Craig Buttar,
Florian Dachs,
Ganapati Dash,
Dominik Dobrijević,
Lucian Fasselt,
Leyre Flores Sanz de Acedo,
Andrea Gabrielli,
Vicente González,
Giuliano Gustavino,
Pranati Jana,
Heinz Pernegger,
Petra Riedler,
Heidi Sandaker,
Carlos Solans Sánchez,
Walter Snoeys,
Tomislav Suligoj,
Marcos Vázquez Núñez
, et al. (4 additional authors not shown)
Abstract:
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) no…
▽ More
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3E15 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021-2023 using the MALTA telescope.
△ Less
Submitted 25 August, 2023;
originally announced August 2023.
-
MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
Authors:
H. Pernegger,
P. Allport,
D. V. Berlea,
A. Birman,
D. Bortoletto,
C. Buttar,
E. Charbon,
F. Dachs,
V. Dao,
H. Denizli,
D. Dobrijevic,
M. Dyndal,
A. Fenigstein,
L. Flores Sanz de Acedo,
P. Freeman,
A. Gabrielli,
M. Gazi,
L. Gonella,
V. Gonzalez,
G. Gustavino,
A. Haim,
T. Kugathasan,
M. LeBlanc,
M. Munker,
K. Y. Oyulmaz
, et al. (14 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granulari…
▽ More
Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The small pixel size ($36.4\times 36.4$~$μ$m$^2$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging.
The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of $2\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be $σ=2$~ns.
△ Less
Submitted 13 September, 2023; v1 submitted 10 January, 2023;
originally announced January 2023.
-
Timing performance of radiation hard MALTA monolithic Pixel sensors
Authors:
G. Gustavino,
P. Allport,
I. Asensi,
D. V. Berlea,
D. Bortoletto,
C. Buttar,
F. Dachs,
V. Dao,
H. Denizli,
D. Dobrijevic,
L. Flores,
A. Gabrielli,
L. Gonella,
V. González,
M. LeBlanc,
K. Oyulmaz,
H. Pernegger,
F. Piro,
P. Riedler,
H. Sandaker,
C. Solans,
W. Snoeys,
T. Suligoj,
M. van Rijnbach,
A. Sharma
, et al. (4 additional authors not shown)
Abstract:
The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficien…
▽ More
The MALTA family of Depleted Monolithic Active Pixel Sensor (DMAPS) produced in Tower 180 nm CMOS technology targets radiation hard applications for the HL-LHC and beyond. Several process modifications and front-end improvements have resulted in radiation hardness up to $2 \times 10^{15}~1~\text{MeV}~\text{n}_{eq}/\text{cm}^2$ and time resolution below 2 ns, with uniform charge collection efficiency across the Pixel of size $36.4 \times 36.4~μ\text{m}^2$ with a $3~μ\text{m}^2$ electrode size. The MALTA2 demonstrator produced in 2021 on high-resistivity epitaxial silicon and on Czochralski substrates implements a new cascoded front-end that reduces the RTS noise and has a higher gain. This contribution shows results from MALTA2 on timing resolution at the nanosecond level from the CERN SPS test-beam campaign of 2021.
△ Less
Submitted 31 January, 2023; v1 submitted 29 September, 2022;
originally announced September 2022.
-
Recent results with radiation-tolerant TowerJazz 180 nm MALTA Sensors
Authors:
Matt LeBlanc,
Phil Allport,
Igancio Asensi,
Dumitru-Vlad Berlea,
Daniela Bortoletto,
Craig Buttar,
Florian Dachs,
Valerio Dao,
Haluk Denizli,
Dominik Dobrijevic,
Leyre Flores,
Andrea Gabrielli,
Laura Gonella,
Vicente González,
Giuliano Gustavino,
Kaan Oyulmaz,
Heinz Pernegger,
Francesco Piro,
Petra Riedler,
Heidi Sandaker,
Carlos Solans,
Walter Snoeys,
Tomislav Suligoj,
Milou van Rijnbach,
Abhishek Sharma
, et al. (4 additional authors not shown)
Abstract:
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 n…
▽ More
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometries. These sensors have a total silicon thickness of between 50-300 $μ$m, implying reduced material budgets and multiple scattering rates for future detectors which utilize such technology. Furthermore, their monolithic design bypasses the costly stage of bump-bonding in hybrid sensors and can substantially reduce detector costs. This contribution presents the latest results from characterization studies of the MALTA2 sensors, including results demonstrating the radiation tolerance of these sensors.
△ Less
Submitted 9 September, 2022;
originally announced September 2022.
-
Mapping the in-plane electric field inside irradiated diodes
Authors:
L. Poley,
A. J. Blue,
C. Buttar,
V. Cindro,
C. Darroch,
V. Fadeyev,
J. Fernandez-Tejero,
C. Fleta,
C. Helling,
C. Labitan,
I. Mandić,
S. N. Santpur,
D. Sperlich,
M. Ullán,
Y. Unno
Abstract:
A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of…
▽ More
A significant aspect of the Phase-II Upgrade of the ATLAS detector is the replacement of the current Inner Detector with the ATLAS Inner Tracker (ITk). The ATLAS ITk is an all-silicon detector consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker have been developed to withstand the high radiation environment in the ATLAS detector after the High Luminosity Upgrade of the Large Hadron Collider at CERN, which will significantly increase the rate of particle collisions and resulting particle tracks. During their operation in the ATLAS detector, sensors for the ITk strip tracker are expected to accumulate fluences up to 1.6 x 10^15 n_eq/cm^2 (including a safety factor of 1.5), which will significantly affect their performance. One characteristic of interest for highly irradiated sensors is the shape and homogeneity of the electric field inside its active area. For the results presented here, diodes with edge structures similar to full size ATLAS sensors were irradiated up to fluences comparable to those in the ATLAS ITk strip tracker and their electric fields mapped using a micro-focused X-ray beam (beam diameter 2x3 μm^2). This study shows the extension and shape of the electric field inside highly irradiated diodes over a range of applied bias voltages. Additionally, measurements of the outline of the depleted sensor areas allow a comparison of the measured leakage current for different fluences with expectations for the corresponding active areas.
△ Less
Submitted 29 March, 2021;
originally announced March 2021.
-
Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Authors:
M. Dyndal,
V. Dao,
P. Allport,
I. Asensi Tortajada,
M. Barbero,
S. Bhat,
D. Bortoletto,
I. Berdalovic,
C. Bespin,
C. Buttar,
I. Caicedo,
R. Cardella,
F. Dachs,
Y. Degerli,
H. Denizli,
L. Flores Sanz de Acedo,
P. Freeman,
L. Gonella,
A. Habib,
T. Hemperek,
T. Hirono,
B. Hiti,
T. Kugathasan,
I. Mandić,
D. Maneuski
, et al. (19 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico…
▽ More
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.
△ Less
Submitted 14 December, 2019; v1 submitted 26 September, 2019;
originally announced September 2019.
-
Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source
Authors:
Maria Mironova,
Kaloyan Metodiev,
Phil Allport,
Ivan Berdalovic,
Daniela Bortoletto,
Craig Buttar,
Roberto Cardella,
Valerio Dao,
Mateusz Dyndal,
Patrick Freeman,
Leyre Flores Sanz de Acedo,
Laura Gonella,
Thanushan Kugathasan,
Heinz Pernegger,
Francesco Piro,
Richard Plackett,
Petra Riedler,
Abhishek Sharma,
Enrico Junior Schioppa,
Ian Shipsey,
Carlos Solans Sanchez,
Walter Snoeys,
Hakan Wennloef,
Daniel Weatherill,
Daniel Wood
, et al. (1 additional authors not shown)
Abstract:
This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were co…
▽ More
This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous $\mathrm{n^-}$ layer layout and front-end, and extra deep p-well and $\mathrm{n^-}$ gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated.
△ Less
Submitted 2 October, 2019; v1 submitted 18 September, 2019;
originally announced September 2019.
-
Mapping the depleted area of silicon diodes using a micro-focused X-ray beam
Authors:
Luise Poley,
Andrew Blue,
Ingo Bloch,
Craig Buttar,
Vitaliy Fadeyev,
Javier Fernandez-Tejero,
Celeste Fleta,
Johannes Hacker,
Carlos Lacasta Llacer,
Mercedes Miñano,
Martin Renzmann,
Edoardo Rossi,
Craig Sawyer,
Dennis Sperlich,
Martin Stegler,
Miguel Ullán,
Yoshinobu Unno
Abstract:
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In…
▽ More
For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker. The ATLAS Inner Tracker will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of -700 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩ cm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source. For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied. The findings showed that the electric field in each diode under investigation extended beyond its bias ring and reached the dicing edge.
△ Less
Submitted 27 March, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
-
Production and Integration of the ATLAS Insertable B-Layer
Authors:
B. Abbott,
J. Albert,
F. Alberti,
M. Alex,
G. Alimonti,
S. Alkire,
P. Allport,
S. Altenheiner,
L. Ancu,
E. Anderssen,
A. Andreani,
A. Andreazza,
B. Axen,
J. Arguin,
M. Backhaus,
G. Balbi,
J. Ballansat,
M. Barbero,
G. Barbier,
A. Bassalat,
R. Bates,
P. Baudin,
M. Battaglia,
T. Beau,
R. Beccherle
, et al. (352 additional authors not shown)
Abstract:
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and i…
▽ More
During the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.
△ Less
Submitted 6 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
-
Test Beam Results of 3D Silicon Pixel Sensors for the ATLAS upgrade
Authors:
ATLAS 3D Collaboration,
P. Grenier,
G. Alimonti,
M. Barbero,
R. Bates,
E. Bolle,
M. Borri,
M. Boscardin,
C. Buttar,
M. Capua,
M. Cavalli-Sforza,
M. Cobal,
A. Cristofoli,
G-F. Dalla Betta,
G. Darbo,
C. Da Vià,
E. Devetak,
B. DeWilde,
B. Di Girolamo,
D. Dobos,
K. Einsweiler,
D. Esseni,
S. Fazio,
C. Fleta,
J. Freestone
, et al. (68 additional authors not shown)
Abstract:
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sen…
▽ More
Results on beam tests of 3D silicon pixel sensors aimed at the ATLAS Insertable-B-Layer and High Luminosity LHC (HL-LHC)) upgrades are presented. Measurements include charge collection, tracking efficiency and charge sharing between pixel cells, as a function of track incident angle, and were performed with and without a 1.6 T magnetic field oriented as the ATLAS Inner Detector solenoid field. Sensors were bump bonded to the front-end chip currently used in the ATLAS pixel detector. Full 3D sensors, with electrodes penetrating through the entire wafer thickness and active edge, and double-sided 3D sensors with partially overlapping bias and read-out electrodes were tested and showed comparable performance.
△ Less
Submitted 21 January, 2011;
originally announced January 2011.
-
Comparison of Measurements of Charge Transfer Inefficiencies in a CCD with High-Speed Column Parallel Readout
Authors:
Andre Sopczak,
Salim Aoulmit,
Khaled Bekhouche,
Chris Bowdery,
Craig Buttar,
Chris Damerell,
Dahmane Djendaoui,
Lakhdar Dehimi,
Rui Gao,
Tim Greenshaw,
Michal Koziel,
Dzmitry Maneuski,
Andrei Nomerotski,
Nouredine Sengouga,
Konstantin Stefanov,
Tuomo Tikkanen,
Tim Woolliscroft,
Steve Worm,
Zhige Zhang
Abstract:
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) Collaboration has been developing Column-Parallel CCDs for the vertex detector of a future Linear Co…
▽ More
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) Collaboration has been developing Column-Parallel CCDs for the vertex detector of a future Linear Collider which can be read out many times faster than standard CCDs. The most recent studies are of devices designed to reduce both the CCD's intergate capacitance and the clock voltages necessary to drive it. A comparative study of measured Charge Transfer Inefficiency values between our previous and new results for a range of operating temperatures is presented.
△ Less
Submitted 30 November, 2009;
originally announced November 2009.
-
The LCFIVertex package: vertexing, flavour tagging and vertex charge reconstruction with an ILC vertex detector
Authors:
LCFI Collaboration,
David Bailey,
Erik Devetak,
Mark Grimes,
Kristian Harder,
Sonja Hillert,
David Jackson,
Talini Pinto Jayawardena,
Ben Jeffery,
Tomas Lastovicka,
Clare Lynch,
Victoria Martin,
Roberval Walsh,
Phil Allport,
Yambazi Banda,
Craig Buttar,
Alexandre Cheplakov,
David Cussans,
Chris Damerell,
Nicolo de Groot,
Johan Fopma,
Brian Foster,
Senerath Galagedera,
Rui Gao,
Anthony Gillman
, et al. (36 additional authors not shown)
Abstract:
The precision measurements envisaged at the International Linear Collider (ILC) depend on excellent instrumentation and reconstruction software. The correct identification of heavy flavour jets, placing unprecedented requirements on the quality of the vertex detector, will be central for the ILC programme. This paper describes the LCFIVertex software, which provides tools for vertex finding and…
▽ More
The precision measurements envisaged at the International Linear Collider (ILC) depend on excellent instrumentation and reconstruction software. The correct identification of heavy flavour jets, placing unprecedented requirements on the quality of the vertex detector, will be central for the ILC programme. This paper describes the LCFIVertex software, which provides tools for vertex finding and for identification of the flavour and charge of the leading hadron in heavy flavour jets. These tools are essential for the ongoing optimisation of the vertex detector design for linear colliders such as the ILC. The paper describes the algorithms implemented in the LCFIVertex package, as well as the scope of the code and its performance for a typical vertex detector design.
△ Less
Submitted 20 August, 2009;
originally announced August 2009.
-
Modeling of Charge Transfer Inefficiency in a CCD with High Speed Column Parallel Readout
Authors:
Andre Sopczak,
Salim Aoulmit,
Khaled Bekhouche,
Chris Bowdery,
Craig Buttar,
Chris Damerell,
Dahmane Djendaoui,
Lakhdar Dehimi,
Tim Greenshaw,
Michal Koziel,
Dzmitry Maneuski,
Andrei Nomerotski,
Konstantin Stefanov,
Tuomo Tikkanen,
Tim Woolliscroft,
Steve Worm
Abstract:
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear…
▽ More
Charge Coupled Devices (CCDs) have been successfully used in several high energy physics experiments over the past two decades. Their high spatial resolution and thin sensitive layers make them an excellent tool for studying short-lived particles. The Linear Collider Flavour Identification (LCFI) collaboration is developing Column-Parallel CCDs (CPCCDs) for the vertex detector of a future Linear Collider. The CPCCDs can be read out many times faster than standard CCDs, significantly increasing their operating speed. An Analytic Model has been developed for the determination of the charge transfer inefficiency (CTI) of a CPCCD. The CTI values determined with the Analytic Model agree largely with those from a full TCAD simulation. The Analytic Model allows efficient study of the variation of the CTI on parameters like readout frequency, operating temperature and occupancy.
△ Less
Submitted 17 November, 2008;
originally announced November 2008.
