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MiniCACTUS: A 65 ps Time Resolution Depleted Monolithic CMOS Sensor
Authors:
Yavuz Degerli,
Fabrice Guilloux,
Tomasz Hemperek,
Jean-Pierre Meyer,
Philippe Schwemling
Abstract:
MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for future large scale timing detectors, like upgrades of timing detectors at LHC, or future high energy physics detector projects. The sensor features an active array o…
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MiniCACTUS is a monolithic sensor prototype optimised for timing measurement of charged particles. It has been designed in a standard 150 nm CMOS process without dedicated amplification layer. It is intended as a demonstrator chip for future large scale timing detectors, like upgrades of timing detectors at LHC, or future high energy physics detector projects. The sensor features an active array of 2 x 4 diodes, analog and digital Front-Ends (FEs), a slow control interface, and bias circuitry programmable through internal DACs. The sensing element is a deep n-well/p-substrate diode. Thanks to the optimized guard-rings surrounding the whole chip, it is possible to apply safely more than 450 V on the high-resistivity substrate allowing fast charge collection. The baseline pixel dimensions are 1.0 mm x 1.0 mm and 0.5 mm x 1.0 mm. The analog FEs and the discriminators for each pixel are implemented outside the pixel, at the column level. The power consumption is approximately 300 mW/cm$\mathbf {^2}$, which is compatible with cooling infrastructure available at LHC experiments, and making integration of this concept viable in future high energy physics experiments. After fabrication, the sensors have been thinned to 100 $μ$m, 200 $μ$m and 300 $μ$m total thickness and then post-processed for backside biasing. The time resolution of several sensors with different thicknesses has been measured in 3 test-beam campaigns using high energy muons (Minimum Ionizing Particles) at CERN SPS in 2021 and 2022. A resolution of 65.3 ps has been measured with on-chip FE and discriminator. This paper will focus on the results of these test-beam campaigns.
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Submitted 15 September, 2023;
originally announced September 2023.
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DMAPS Monopix developments in large and small electrode designs
Authors:
Christian Bespin,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Leyre Flores Sanz de Acedo,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Cesar Augusto Marin Tobon,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
Francesco Piro,
Petra Riedler
, et al. (8 additional authors not shown)
Abstract:
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows…
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LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.
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Submitted 9 July, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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CACTUS: A depleted monolithic active timing sensor using a CMOS radiation hard technology
Authors:
Yavuz Degerli,
Fabrice Guilloux,
Claude Guyot,
Jean-Pierre Meyer,
Ahmimed Ouraou,
Philippe Schwemling,
Artur Apresyan,
Ryan E. Heller,
Mohd Meraj,
Christian Pena,
Si Xie,
Tomasz Hemperek
Abstract:
The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will…
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The planned luminosity increase at the Large Hadron Collider in the coming years has triggered interest in the use of the particles' time of arrival as additional information in specialized detectors to mitigate the impact of pile-up. The required time resolution is of the order of tens of picoseconds, with a spatial granularity of the order of 1 mm. A time measurement at this precision level will also be of interest beyond the LHC and beyond high energy particle physics. We present in this paper the first developments towards a radiation hard Depleted Monolithic Active Pixel Sensor (DMAPS), with high-resolution time measurement capability. The technology chosen is a standard high voltage CMOS process, in conjunction with a high resistivity detector material, which has already proven to efficiently detect particles in tracking applications after several hundred of Mrad of irradiation.
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Submitted 6 May, 2020; v1 submitted 9 March, 2020;
originally announced March 2020.
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Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC
Authors:
M. Barbero,
P. Barrillon,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
J. Dingfelder,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
F. Hügging,
H. Krüger,
K. Moustakas,
A. Ouraou,
P. Pangaud,
I. Peric,
D-L. Pohl,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.
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Submitted 25 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Authors:
M. Dyndal,
V. Dao,
P. Allport,
I. Asensi Tortajada,
M. Barbero,
S. Bhat,
D. Bortoletto,
I. Berdalovic,
C. Bespin,
C. Buttar,
I. Caicedo,
R. Cardella,
F. Dachs,
Y. Degerli,
H. Denizli,
L. Flores Sanz de Acedo,
P. Freeman,
L. Gonella,
A. Habib,
T. Hemperek,
T. Hirono,
B. Hiti,
T. Kugathasan,
I. Mandić,
D. Maneuski
, et al. (19 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico…
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Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.
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Submitted 14 December, 2019; v1 submitted 26 September, 2019;
originally announced September 2019.
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The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
Authors:
Ivan Caicedo,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Christian Bespin,
Patrick Breugnon,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
David-Leon Pohl,
Petra Riedler,
Alexandre Rozanov,
Piotr Rymaszewski
, et al. (5 additional authors not shown)
Abstract:
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>…
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Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed.
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Submitted 25 April, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade
Authors:
K. Moustakas,
M. Barbero,
I. Berdalovic,
C. Bespin,
P. Breugnon,
I. Caicedo,
R. Cardella,
Y. Degerli,
N. Egidos Plaja,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krueger,
T. Kugathasan,
C. A. Marin Tobon,
P. Pangaud,
H. Pernegger,
E. J. Schioppa,
W. Snoeys,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o…
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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC).
LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$.
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Submitted 10 September, 2018;
originally announced September 2018.
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Characterization of a depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
Authors:
F. J. Iguaz,
F. Balli,
M. Barbero,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
S. Godiot,
F. Guilloux,
C. Guyot,
T. Hemperek,
T. Hirono,
H. Krüger,
J. P. Meyer,
A. Ouraou,
P. Pangaud,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating…
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This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150\,nm CMOS process. DMAPS exploit high voltage and/or high resistivity inclusion of modern CMOS technologies to achieve substantial depletion in the sensing volume. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade in 2025 for the High Luminosity Large Hadron Collider (HL-LHC). This type of devices has a lower production cost and lower material budget compared to presently used hybrid designs. In this work, the chip architecture will be described followed by the characterization of the different pre-amplifier and discriminator flavors with an external injection signal and an iron source (5.9\,keV x-rays).
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Submitted 12 June, 2018;
originally announced June 2018.
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Depleted Fully Monolithic Active CMOS Pixel Sensors (DMAPS) in High Resistivity 150~nm Technology for LHC
Authors:
Toko Hirono,
Marlon Barbero,
Pierre Barrillon,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Zongde Chen,
Michael Daas,
Yavuz Degerli,
Fabrice Guilloux,
Tomasz Hemperek,
Fabian Hugging,
Hans Kruger,
Patrick Pangaud,
Piotr Rymaszewski,
Philippe Schwemling,
Maxence Vandenbroucke,
Tianyang Wang,
Norbert Wermes
Abstract:
Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip s…
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Depleted monolithic CMOS active pixel sensors (DMAPS) have been developed in order to demonstrate their suitability as pixel detectors in the outer layers of a toroidal LHC apparatus inner tracker (ATLAS ITk) pixel detector in the high-luminosity large hadron collider (HL-LHC). Two prototypes have been fabricated using 150 nm CMOS technology on high resistivity (> 2 k$Ω$ $cm^2$) wafers. The chip size is equivalent to that of the current ATLAS pixel detector readout chip. One of the prototypes is used for detailed characterization of the sensor and the analog readout of the DMAPS. The other is a fully monolithic DMAPS including fast readout digital logic that handles the required hit rate. In order to yield a strong homogeneous electric field within the sensor volume, thinning of the wafer was tested. The prototypes were irradiated with X-ray up to a total ionization dose (TID) of 50 Mrad and with neutrons up to non-ionizing energy loss (NIEL) of $10^{15}$ $n_{eq}/cm^2$. The analog readout circuitry maintained its performance after TID irradiation, and the hit-efficiency at > $10^7$ noise occupancy was as high as 98.9 % after NIEL irradiation.
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Submitted 25 March, 2018;
originally announced March 2018.
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Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade
Authors:
Piotr Rymaszewski,
Marlon Barbero,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Zongde Chen,
Yavuz Degerli,
Stephanie Godiot,
Fabrice Guilloux,
Claude Guyot,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Mohamed Lachkar,
Patrick Pangaud,
Alexandre Rozanov,
Philippe Schwemling,
Maxence Vandenbroucke,
Tianyang Wang,
Norbert Wermes
Abstract:
This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a…
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This work presents a depleted monolithic active pixel sensor (DMAPS) prototype manufactured in the LFoundry 150 nm CMOS process. The described device, named LF-Monopix, was designed as a proof of concept of a fully monolithic sensor capable of operating in the environment of outer layers of the ATLAS Inner Tracker upgrade for the High Luminosity Large Hadron Collider (HL-LHC). Implementing such a device in the detector module will result in a lower production cost and lower material budget compared to the presently used hybrid designs. In this paper the chip architecture will be described followed by the simulation and measurement results.
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Submitted 15 November, 2017; v1 submitted 3 November, 2017;
originally announced November 2017.
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Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade
Authors:
T. Wang,
M. Barbero,
I. Berdalovic,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
R. Cardella,
Z. Chen,
Y. Degerli,
N. Egidos,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
T. Kugathasan,
F. Hügging,
C. A. Marin Tobon,
K. Moustakas,
P. Pangaud,
P. Schwemling,
H. Pernegger,
D-L. Pohl,
A. Rozanov
, et al. (3 additional authors not shown)
Abstract:
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo…
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Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown.
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Submitted 29 September, 2017;
originally announced October 2017.
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Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade
Authors:
T. Wang,
P. Rymaszewski,
M. Barbero,
Y. Degerli,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
J. Liu,
F. Orsini,
P. Pangaud,
A. Rozanov,
N. Wermes
Abstract:
The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exp…
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The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.
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Submitted 3 November, 2016;
originally announced November 2016.
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Infrastructure for Detector Research and Development towards the International Linear Collider
Authors:
J. Aguilar,
P. Ambalathankandy,
T. Fiutowski,
M. Idzik,
Sz. Kulis,
D. Przyborowski,
K. Swientek,
A. Bamberger,
M. Köhli,
M. Lupberger,
U. Renz,
M. Schumacher,
Andreas Zwerger,
A. Calderone,
D. G. Cussans,
H. F. Heath,
S. Mandry,
R. F. Page,
J. J. Velthuis,
D. Attié,
D. Calvet,
P. Colas,
X. Coppolani,
Y. Degerli,
E. Delagnes
, et al. (252 additional authors not shown)
Abstract:
The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infras…
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The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.
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Submitted 23 January, 2012;
originally announced January 2012.
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M.i.p. detection performances of a 100 us read-out CMOS pixel sensor with digitised outputs
Authors:
Marc Winter,
Jerome Baudot,
Auguste Besson,
Claude Colledani,
Yavuz Degerli,
Rita De Masi,
Andrei Dorokhov,
Guy Doziere,
Wojciech Dulinski,
Marie Gelin,
Fabrice Guilloux,
Abdelkader Himmi,
Christine Hu-Guo,
Frederic Morel,
Fabienne Orsini,
Isabelle Valin,
Georgios Voutsinas
Abstract:
Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 withi…
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Swift, high resolution CMOS pixel sensors are being developed for the ILC vertex detector, aiming to allow approaching the interaction point very closely. A major issue is the time resolution of the sensors needed to deal with the high occupancy generated by the beam related background. A 128x576 pixel sensor providing digitised outputs at a read-out time of 92.5 us, was fabricated in 2008 within the EU project EUDET, and tested with charged particles at the CERN-SPS. Its prominent performances in terms of noise, detection efficiency versus fake hit rate, spatial resolution and radiation tolerance are overviewed. They validate the sensor architecture.
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Submitted 16 February, 2009;
originally announced February 2009.
