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The Belle II Detector Upgrades Framework Conceptual Design Report
Authors:
H. Aihara,
A. Aloisio,
D. P. Auguste,
M. Aversano,
M. Babeluk,
S. Bahinipati,
Sw. Banerjee,
M. Barbero,
J. Baudot,
A. Beaubien,
F. Becherer,
T. Bergauer,
F. U. Bernlochner.,
V. Bertacchi,
G. Bertolone,
C. Bespin,
M. Bessner,
S. Bettarini,
A. J. Bevan,
B. Bhuyan,
M. Bona,
J. F. Bonis,
J. Borah,
F. Bosi,
R. Boudagga
, et al. (186 additional authors not shown)
Abstract:
We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive wit…
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We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments.
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Submitted 4 July, 2024; v1 submitted 26 June, 2024;
originally announced June 2024.
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Characterisation and simulation of stitched CMOS strip sensors
Authors:
Naomi Davis,
Jan-Hendrik Arling,
Marta Baselga,
Leena Diehl,
Jochen Dingfelder,
Ingrid-Maria Gregor,
Marc Hauser,
Fabian Hügging,
Tomasz Hemperek,
Karl Jakobs,
Michael Karagounis,
Roland Koppenhöfer,
Kevin Kröninger,
Fabian Lex,
Ulrich Parzefall,
Arturo Rodriguez,
Birkan Sari,
Niels Sorgenfrei,
Simon Spannagel,
Dennis Sperlich,
Tianyang Wang,
Jens Weingarten,
Iveta Zatocilova
Abstract:
In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two dif…
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In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.
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Submitted 14 May, 2024;
originally announced May 2024.
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A beam-driven proton irradiation setup for precision radiation damage tests of silicon detectors
Authors:
Pascal Wolf,
Dennis Sauerland,
Reinhard Beck,
Jochen Dingfelder
Abstract:
A proton irradiation site for silicon detectors has been developed and commissioned at the Bonn Isochronous Cyclotron. The accelerator provides 14 MeV proton beams of up to 1 $μ$A at beam widths of a few mm to the setup. Devices Under Test (DUTs) are irradiated inside a cooled, thermally-insulated box at $\le$-20°C, while being moved through the beam in a row-based scan pattern to achieve uniform…
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A proton irradiation site for silicon detectors has been developed and commissioned at the Bonn Isochronous Cyclotron. The accelerator provides 14 MeV proton beams of up to 1 $μ$A at beam widths of a few mm to the setup. Devices Under Test (DUTs) are irradiated inside a cooled, thermally-insulated box at $\le$-20°C, while being moved through the beam in a row-based scan pattern to achieve uniform fluence distributions. Custom-made diagnostics allow for beam-based, on- and offline dosimetry, enabling a beam-driven irradiation routine which produces uniform fluence distributions with standard deviations $ \ll 1 \% $. Dedicated irradiations of thin titanium foils are performed to compare the commonly-used dosimetry via metallic foil activation to the beam-based approach. Within the error margins, both methods are in agreement, whereas the beam-based technique yields lower uncertainties of typically $ \le 2 \% $. Simulations indicate a reduction of the initial proton energy to 12.28(6) MeV on the DUT. Characterization of six, 150 $μ$m-thin, passive LFoundry sensors before and after irradiation yield a proton hardness factor of $κ_\text{p}=3.71(11)$, which is in agreement with expectations, allowing to irradiate up to $10^{16} \text{n}_{eq} / \text{cm}^2$ within a few hours.
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Submitted 5 May, 2024; v1 submitted 17 April, 2024;
originally announced April 2024.
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Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
Authors:
Lars Schall,
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Walter Snoeys,
Norbert Wermes,
Sinuo Zhang
Abstract:
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted…
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Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented.
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Submitted 19 February, 2024;
originally announced February 2024.
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Breakdown Performance of Guard Ring Designs for Pixel Detectors in $150~\mathrm{nm}$ CMOS Technology
Authors:
Sinuo Zhang,
Ivan Caicedo,
Tomasz Hemperek,
Toko Hirono,
Jochen Dingfelder
Abstract:
Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operation of detectors, the breakdown performance of pixel sensors constitutes the upper limit of the operating voltage. Six types of passive CMOS test structures were…
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Silicon pixel sensors manufactured using commercial CMOS processes are promising instruments for high-energy particle physics experiments due to their high yield and proven radiation hardness. As one of the essential factors for the operation of detectors, the breakdown performance of pixel sensors constitutes the upper limit of the operating voltage. Six types of passive CMOS test structures were fabricated on high-resistivity wafers. Each of them features a combination of different inter-pixel designs and sets of floating guard rings, which differ from each other in the geometrical layout, implantation type, and overhang structure. A comparative study based on leakage current measurements in the sensor substrate of unirradiated samples was carried out to identify correlations between guard ring designs and breakdown voltages. TCAD simulations using the design parameters of the test structures were performed to discuss the observations and, together with the measurements, ultimately provide design features targeting higher breakdown voltages.
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Submitted 28 March, 2024; v1 submitted 24 October, 2023;
originally announced October 2023.
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Characterization, Simulation and Test Beam Data Analysis of Stitched Passive CMOS Strip Sensors
Authors:
I. Zatocilova,
J. -H. Arling,
M. Baselga,
N. Davis,
L. Diehl,
J. Dingfelder,
I. -M. Gregor,
M. Hauser,
T. Hemperek,
F. Hügging,
K. Jakobs,
M. Karagounis,
K. Kröninger,
F. Lex,
U. Parzefall,
A. Rodriguez,
B. Sari,
N. Sorgenfrei,
S. Spannagel,
D. Sperlich,
T. Wang,
J. Weingarten
Abstract:
In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors w…
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In the passive CMOS Strips Project, strip sensors were designed at the University of Bonn and produced by LFoundry in 150 nm technology, with an additional backside processing from IZM Berlin. Up to five individual reticules were connected by stitching at the foundry in order to obtain the typical strip lengths required for the LHC Phase-II upgrade of ATLAS or CMS trackers. After dicing, sensors were tested in a probe station and characterised with a Sr90-source as well as laser-based edge- and top-TCT systems. Sensors were also simulated using Sentaurus TCAD. At last, detector modules were constructed from several sensors and thoroughly studied in two beam campaigns at DESY. All of these measurements were performed before and after irradiation. This contribution provides an overview of simulation results, summarises the laboratory measurements and in particular presents first test beam results for irradiated and unirradiated passive CMOS strip sensors. We are demonstrating that large area sensors with sufficient radiation hardness can be obtained by stitching during the CMOS process, and presenting our plans for the next submission in the framework of this project.
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Submitted 15 November, 2023; v1 submitted 28 September, 2023;
originally announced September 2023.
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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology
Authors:
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Lars Schall,
Walter Snoeys,
Norbert Wermes
Abstract:
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, fe…
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Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.
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Submitted 31 January, 2023;
originally announced January 2023.
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Characterization of passive CMOS sensors with RD53A pixel modules
Authors:
Franz Glessgen,
Malte Backhaus,
Florencia Canelli,
Yannick Manuel Dieter,
Jochen Christian Dingfelder,
Tomasz Hemperek,
Fabian Huegging,
Arash Jofrehei,
Weijie Jin,
Ben Kilminster,
Anna Macchiolo,
Daniel Muenstermann,
David-Leon Pohl,
Branislav Ristic,
Rainer Wallny,
Tianyang Wang,
Norbert Wermes,
Pascal Wolf
Abstract:
Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS fou…
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Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to fabricate silicon radiation detectors, both for pixels and for large-area strip sensors. A successful proof of concept would open the market potential of CMOS foundries to the HEP community, which would be most beneficial in terms of availability, throughput and cost. In addition, the availability of multi-layer routing of signals will provide the freedom to optimize the sensor geometry and the performance, with biasing structures implemented in poly-silicon layers and MIM-capacitors allowing for AC coupling. A prototyping production of strip test structures and RD53A compatible pixel sensors was recently completed at LFoundry in a 150nm CMOS process. This presentation will focus on the characterization of pixel modules, studying the performance in terms of charge collection, position resolution and hit efficiency with measurements performed in the laboratory and with beam tests. We will report on the investigation of RD53A modules with 25x100 mu^2 cell geometry.
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Submitted 15 November, 2021;
originally announced November 2021.
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Effects of gamma irradiation on DEPFET pixel sensors for the Belle II experiment
Authors:
Harrison Schreeck,
Benjamin Schwenker,
Philipp Wieduwilt,
Ariane Frey,
Botho Paschen,
Florian Lütticke,
Patrick Ahlburg,
Jochen Dingfelder,
Carlos Marinas,
Ladislav Andricek,
Rainer Richter
Abstract:
For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiat…
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For the Belle II experiment at KEK (Tsukuba, Japan) the KEKB accelerator was upgraded to deliver a 40 times larger instantaneous luminosity than before, which requires an increased radiation hardness of the detector components. As the innermost part of the Belle II detector, the pixel detector (PXD), based on DEPFET (DEpleted P-channel Field Effect Transistor) technology, is most exposed to radiation from the accelerator. An irradiation campaign was performed to verify that the PXD can cope with the expected amount of radiation. We present the results of this measurement campaign in which an X-ray machine was used to irradiate a single PXD half-ladder to a total dose of 266 kGy. The half-ladder is from the same batch as the half-ladders used for Belle II. According to simulations, the total accumulated dose corresponds to 7-10 years of Belle II operation. While individual components have been irradiated before, this campaign is the first full system irradiation. We discuss the effects on the DEPFET sensors, as well as the performance of the front-end electronics. In addition, we present efficiency studies of the half-ladder from beam tests performed before and after the irradiation.
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Submitted 22 September, 2021;
originally announced September 2021.
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Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip
Authors:
Yannick Dieter,
Michael Daas,
Jochen Dingfelder,
Tomasz Hemperek,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
David-Leon Pohl,
Marco Vogt,
Tianyang Wang,
Norbert Wermes,
Pascal Wolf
Abstract:
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sens…
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The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\times$ 10$^{16}$n$_{\mathrm{eq}}$cm$^{-2}$, is presented. The sensor was bump-bonded and read out using the RD53A readout chip. After the highest fluence a hit-detection efficiency larger than 99% is measured for minimum ionising particles. The measured equivalent noise charge is comparable to conventional planar pixel sensors. Passive CMOS sensors are thus an attractive option for silicon detectors operating in radiation harsh environments like the upgrades for the LHC experiments.
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Submitted 9 May, 2021;
originally announced May 2021.
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Performance of production modules of the Belle II pixel detector in a high-energy particle beam
Authors:
P. Wieduwilt,
B. Paschen,
H. Schreeck,
B. Schwenker,
J. Soltau,
P. Ahlburg,
J. Dingfelder,
A. Frey,
P. Gomis,
F. Lütticke,
C. Marinas
Abstract:
The Belle II experiment at the Super B factory SuperKEKB, an asymmetric $e^+e^-$ collider located in Tsukuba, Japan, is tailored to perform precision B physics measurements. The centre of mass energy of the collisions is equal to the rest mass of the $Υ(4S)$ resonance of $m_{Υ(4S)} = 10.58\,\rm GeV$. A high vertex resolution is essential for measuring the decay vertices of B mesons. Typical moment…
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The Belle II experiment at the Super B factory SuperKEKB, an asymmetric $e^+e^-$ collider located in Tsukuba, Japan, is tailored to perform precision B physics measurements. The centre of mass energy of the collisions is equal to the rest mass of the $Υ(4S)$ resonance of $m_{Υ(4S)} = 10.58\,\rm GeV$. A high vertex resolution is essential for measuring the decay vertices of B mesons. Typical momenta of the decay products are ranging from a few tens of MeV to a few GeV and multiple scattering has a significant impact on the vertex resolution. The VerteX Detector (VXD) for Belle II is therefore designed to have as little material as possible inside the acceptance region. Especially the innermost two layers, populated by the PiXel Detector (PXD), have to be ultra-thin. The PXD is based on DEpleted P-channel Field Effect Transistors (DEPFETs) with a thickness of only $75\,\rmμm$. Spatial resolution and hit efficiency of production detector modules were studied in beam tests performed at the DESY test beam facility. The spatial resolution was investigated as a function of the incidence angle and improvements due to charge sharing are demonstrated. The measured module performance is compatible with the requirements for Belle II.
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Submitted 22 January, 2021;
originally announced January 2021.
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DMAPS Monopix developments in large and small electrode designs
Authors:
Christian Bespin,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Leyre Flores Sanz de Acedo,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Cesar Augusto Marin Tobon,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
Francesco Piro,
Petra Riedler
, et al. (8 additional authors not shown)
Abstract:
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows…
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LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.
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Submitted 9 July, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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BDAQ53, a versatile pixel detector readout and test system for the ATLAS and CMS HL-LHC upgrades
Authors:
Michael Daas,
Yannick Dieter,
Jochen Dingfelder,
Markus Frohne,
Georgios Giakoustidis,
Tomasz Hemperek,
Florian Hinterkeuser,
Fabian Hügging,
Jens Janssen,
Hans Krüger,
David-Leon Pohl,
Piotr Rymaszewski,
Mark Standke,
Tianyang Wang,
Marco Vogt,
Norbert Wermes
Abstract:
BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for qu…
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BDAQ53 is a readout system and verification framework for hybrid pixel detector readout chips of the RD53 family. These chips are designed for the upgrade of the inner tracking detectors of the ATLAS and CMS experiments. BDAQ53 is used in applications where versatility and rapid customization are required, such as in laboratory testing environments, test beam campaigns, and permanent setups for quality control measurements. It consists of custom and commercial hardware, a Python-based software framework, and FPGA firmware. BDAQ53 is developed as open source software with both software and firmware being hosted in a public repository.
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Submitted 5 October, 2020; v1 submitted 22 May, 2020;
originally announced May 2020.
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Improving the Spatial Resolution of Silicon Pixel Detectors through Sub-pixel Cross-coupling
Authors:
Sinuo Zhang,
David-Leon Pohl,
Tomasz Hemperek,
Jochen Dingfelder
Abstract:
We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented into sub-pixels and each sub-pixel is coupled to the closest sub-pixel of the neighboring pixel.
Such coupling schema is evaluated for a model sensor design…
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We present a concept to improve the spatial resolution of silicon pixel-detectors via the implementation of a sub-pixel cross-coupling, which introduces directional charge sharing between pixels. The charge-collection electrode is segmented into sub-pixels and each sub-pixel is coupled to the closest sub-pixel of the neighboring pixel.
Such coupling schema is evaluated for a model sensor design with $50 μm \times 50 μm$ pixels and AC-coupled sub-pixels. A first-order SPICE simulation is used, to determine feasible coupling strengths and assess the influence on the charge-collection efficiency. The impact of the coupling strength on spatial resolution is studied with a dedicated simulation, taking into account charge-cloud evolution, energy-loss straggling, electronic noise, and the charge detection-threshold. Using simplifying assumptions, such as perpendicular tracks and no gaps between charge-collection electrodes, an improvement of the spatial resolution by up to approximately $30\%$ is obtained in comparison to the standard planar pixel layout.
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Submitted 23 July, 2020; v1 submitted 4 December, 2019;
originally announced December 2019.
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Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC
Authors:
M. Barbero,
P. Barrillon,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
J. Dingfelder,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
F. Hügging,
H. Krüger,
K. Moustakas,
A. Ouraou,
P. Pangaud,
I. Peric,
D-L. Pohl,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.
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Submitted 25 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
Authors:
Ivan Caicedo,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Christian Bespin,
Patrick Breugnon,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
David-Leon Pohl,
Petra Riedler,
Alexandre Rozanov,
Piotr Rymaszewski
, et al. (5 additional authors not shown)
Abstract:
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>…
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Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed.
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Submitted 25 April, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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DEPFET active pixel detectors for a future linear $e^+e^-$ collider
Authors:
O. Alonso,
R. Casanova,
A. Dieguez,
J. Dingfelder,
T. Hemperek,
T. Kishishita amd T. Kleinohl,
M. Koch,
H. Krueger,
M. Lemarenko,
F. Luetticke,
C. Marinas,
M. Schnell,
N. Wermes,
A. Campbell,
T. Ferber,
C. Kleinwort,
C. Niebuhr,
Y. Soloviev,
M. Steder,
R. Volkenborn,
S. Yaschenko,
P. Fischer,
C. Kreidl,
I. Peric,
J. Knopf
, et al. (62 additional authors not shown)
Abstract:
The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a senso…
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The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\mathrm{\mathbf{μm}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\mathbf{e^+ e^-}$ collider.
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Submitted 10 December, 2012;
originally announced December 2012.
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Belle II Technical Design Report
Authors:
T. Abe,
I. Adachi,
K. Adamczyk,
S. Ahn,
H. Aihara,
K. Akai,
M. Aloi,
L. Andricek,
K. Aoki,
Y. Arai,
A. Arefiev,
K. Arinstein,
Y. Arita,
D. M. Asner,
V. Aulchenko,
T. Aushev,
T. Aziz,
A. M. Bakich,
V. Balagura,
Y. Ban,
E. Barberio,
T. Barvich,
K. Belous,
T. Bergauer,
V. Bhardwaj
, et al. (387 additional authors not shown)
Abstract:
The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been pr…
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The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.
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Submitted 1 November, 2010;
originally announced November 2010.
