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Radiation Hardness of MALTA2 Monolithic CMOS Sensors on Czochralski Substrates
Authors:
Milou van Rijnbach,
Dumitru Vlad Berlea,
Valerio Dao,
Martin Gaži,
Phil Allport,
Ignacio Asensi Tortajada,
Prafulla Behera,
Daniela Bortoletto,
Craig Buttar,
Florian Dachs,
Ganapati Dash,
Dominik Dobrijević,
Lucian Fasselt,
Leyre Flores Sanz de Acedo,
Andrea Gabrielli,
Vicente González,
Giuliano Gustavino,
Pranati Jana,
Heinz Pernegger,
Petra Riedler,
Heidi Sandaker,
Carlos Solans Sánchez,
Walter Snoeys,
Tomislav Suligoj,
Marcos Vázquez Núñez
, et al. (4 additional authors not shown)
Abstract:
MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) no…
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MALTA2 is the latest full-scale prototype of the MALTA family of Depleted Monolithic Active Pixel Sensors (DMAPS) produced in Tower Semiconductor 180 nm CMOS technology. In order to comply with the requirements of High Energy Physics (HEP) experiments, various process modifications and front-end changes have been implemented to achieve low power consumption, reduce Random Telegraph Signal (RTS) noise, and optimise the charge collection geometry. Compared to its predecessors, MALTA2 targets the use of a high-resistivity, thick Czochralski (Cz) substrates in order to demonstrate radiation hardness in terms of detection efficiency and timing resolution up to 3E15 1 MeV neq/cm2 with backside metallisation to achieve good propagation of the bias voltage. This manuscript shows the results that were obtained with non-irradiated and irradiated MALTA2 samples on Cz substrates from the CERN SPS test beam campaign from 2021-2023 using the MALTA telescope.
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Submitted 25 August, 2023;
originally announced August 2023.
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Development of novel low-mass module concepts based on MALTA monolithic pixel sensors
Authors:
J Weick,
F Dachs,
P Riedler,
M Vicente Barreto Pinto,
A M. Zoubir,
L Flores Sanz de Acedo,
I Asensi Tortajada,
V Dao,
D Dobrijevic,
H Pernegger,
M Van Rijnbach,
A Sharma,
C Solans Sanchez,
R de Oliveira,
D Dannheim,
J V Schmidt
Abstract:
The MALTA CMOS monolithic silicon pixel sensors has been developed in the Tower 180 nm CMOS imaging process. It includes an asynchronous readout scheme and complies with the ATLAS inner tracker requirements for the HL-LHC. Several 4-chip MALTA modules have been built using Al wedge wire bonding to demonstrate the direct transfer of data from chip-to-chip and to read out the data of the entire modu…
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The MALTA CMOS monolithic silicon pixel sensors has been developed in the Tower 180 nm CMOS imaging process. It includes an asynchronous readout scheme and complies with the ATLAS inner tracker requirements for the HL-LHC. Several 4-chip MALTA modules have been built using Al wedge wire bonding to demonstrate the direct transfer of data from chip-to-chip and to read out the data of the entire module via one chip only. Novel technologies such as Anisotropic Conductive Films (ACF) and nanowires have been investigated to build a compact module. A lightweight flex with 17 μm trace spacing has been designed, allowing compact packaging with a direct attachment of the chip connection pads to the flex using these interconnection technologies. This contribution shows the current state of our work towards a flexible, low material, dense and reliable packaging and modularization of pixel detectors.
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Submitted 10 March, 2023;
originally announced March 2023.
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MALTA-Cz: A radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate
Authors:
H. Pernegger,
P. Allport,
D. V. Berlea,
A. Birman,
D. Bortoletto,
C. Buttar,
E. Charbon,
F. Dachs,
V. Dao,
H. Denizli,
D. Dobrijevic,
M. Dyndal,
A. Fenigstein,
L. Flores Sanz de Acedo,
P. Freeman,
A. Gabrielli,
M. Gazi,
L. Gonella,
V. Gonzalez,
G. Gustavino,
A. Haim,
T. Kugathasan,
M. LeBlanc,
M. Munker,
K. Y. Oyulmaz
, et al. (14 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granulari…
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Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czochralski (MALTA-Cz)" full size DMAPS sensor has been developed with the goal to demonstrate a radiation hard, thin CMOS sensor with high granularity, high hit-rate capability, fast response time and superior radiation tolerance. The small pixel size ($36.4\times 36.4$~$μ$m$^2$) provides high spatial resolution. Its asynchronous readout architecture is designed for high hit-rates and fast time response in triggered and trigger-less detector applications. The readout architecture is designed to stream all hit data to the multi-channel output which allows an off-sensor trigger formation and the use of hit-time information for event tagging.
The sensor manufacturing has been optimised through process adaptation and special implant designs to allow the manufacturing of small electrode DMAPS on thick high-resistivity p-type Czochralski substrate. The special processing ensures excellent charge collection and charge particle detection efficiency even after a high level of radiation. Furthermore the special implant design and use of a Czochralski substrate improves the sensor's time resolution. This paper presents a summary of sensor design optimisation through process and implant choices and TCAD simulation to model the signal response. Beam and laboratory test results on unirradiated and irradiated sensors have shown excellent detection efficiency after a dose of $2\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$. The time resolution of the sensor is measured to be $σ=2$~ns.
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Submitted 13 September, 2023; v1 submitted 10 January, 2023;
originally announced January 2023.
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DMAPS Monopix developments in large and small electrode designs
Authors:
Christian Bespin,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Leyre Flores Sanz de Acedo,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Cesar Augusto Marin Tobon,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
Francesco Piro,
Petra Riedler
, et al. (8 additional authors not shown)
Abstract:
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows…
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LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.
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Submitted 9 July, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Authors:
M. Dyndal,
V. Dao,
P. Allport,
I. Asensi Tortajada,
M. Barbero,
S. Bhat,
D. Bortoletto,
I. Berdalovic,
C. Bespin,
C. Buttar,
I. Caicedo,
R. Cardella,
F. Dachs,
Y. Degerli,
H. Denizli,
L. Flores Sanz de Acedo,
P. Freeman,
L. Gonella,
A. Habib,
T. Hemperek,
T. Hirono,
B. Hiti,
T. Kugathasan,
I. Mandić,
D. Maneuski
, et al. (19 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico…
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Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.
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Submitted 14 December, 2019; v1 submitted 26 September, 2019;
originally announced September 2019.
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Measurement of the relative response of TowerJazz Mini-MALTA CMOS prototypes at Diamond Light Source
Authors:
Maria Mironova,
Kaloyan Metodiev,
Phil Allport,
Ivan Berdalovic,
Daniela Bortoletto,
Craig Buttar,
Roberto Cardella,
Valerio Dao,
Mateusz Dyndal,
Patrick Freeman,
Leyre Flores Sanz de Acedo,
Laura Gonella,
Thanushan Kugathasan,
Heinz Pernegger,
Francesco Piro,
Richard Plackett,
Petra Riedler,
Abhishek Sharma,
Enrico Junior Schioppa,
Ian Shipsey,
Carlos Solans Sanchez,
Walter Snoeys,
Hakan Wennloef,
Daniel Weatherill,
Daniel Wood
, et al. (1 additional authors not shown)
Abstract:
This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were co…
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This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2 $\mathrm{μm}$ steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous $\mathrm{n^-}$ layer layout and front-end, and extra deep p-well and $\mathrm{n^-}$ gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated.
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Submitted 2 October, 2019; v1 submitted 18 September, 2019;
originally announced September 2019.