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The Belle II Detector Upgrades Framework Conceptual Design Report
Authors:
H. Aihara,
A. Aloisio,
D. P. Auguste,
M. Aversano,
M. Babeluk,
S. Bahinipati,
Sw. Banerjee,
M. Barbero,
J. Baudot,
A. Beaubien,
F. Becherer,
T. Bergauer,
F. U. Bernlochner.,
V. Bertacchi,
G. Bertolone,
C. Bespin,
M. Bessner,
S. Bettarini,
A. J. Bevan,
B. Bhuyan,
M. Bona,
J. F. Bonis,
J. Borah,
F. Bosi,
R. Boudagga
, et al. (186 additional authors not shown)
Abstract:
We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive wit…
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We describe the planned near-term and potential longer-term upgrades of the Belle II detector at the SuperKEKB electron-positron collider operating at the KEK laboratory in Tsukuba, Japan. These upgrades will allow increasingly sensitive searches for possible new physics beyond the Standard Model in flavor, tau, electroweak and dark sector physics that are both complementary to and competitive with the LHC and other experiments.
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Submitted 4 July, 2024; v1 submitted 26 June, 2024;
originally announced June 2024.
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Cross talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology
Authors:
Lars Schall,
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Walter Snoeys,
Norbert Wermes,
Sinuo Zhang
Abstract:
Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted…
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Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) are able to cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180 nm TowerSemicondutor technology, which features a large scale (2 x 2) cm$^2$ chip divided into (512 x 512) pixels with a pitch of (33 x 33) um$^2$. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a threshold variation observed for TJ-Monopix2 in typical operating conditions are presented.
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Submitted 19 February, 2024;
originally announced February 2024.
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Charge collection and efficiency measurements of the TJ-Monopix2 DMAPS in 180$\,$nm CMOS technology
Authors:
Christian Bespin,
Ivan Caicedo,
Jochen Dingfelder,
Tomasz Hemperek,
Toko Hirono,
Fabian Hügging,
Hans Krüger,
Konstantinos Moustakas,
Heinz Pernegger,
Petra Riedler,
Lars Schall,
Walter Snoeys,
Norbert Wermes
Abstract:
Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, fe…
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Monolithic CMOS pixel detectors have emerged as competitive contenders in the field of high-energy particle physics detectors. By utilizing commercial processes they offer high-volume production of such detectors. A series of prototypes has been designed in a 180$\,$nm Tower process with depletion of the sensor material and a column-drain readout architecture. The latest iteration, TJ-Monopix2, features a large 2$\,$cm x 2$\,$cm matrix consisting of 512 x 512 pixels with 33.04$\,$um pitch. A small collection electrode design aims at low power consumption and low noise while the radiation tolerance for high-energy particle detector applications needs extra attention. With a goal to reach radiation tolerance to levels of $10^{15}\,1\,$MeV n$_\text{eq}\,$cm$^{-2}$ of NIEL damage a modification of the standard process has been implemented by adding a low-dosed n-type silicon implant across the pixel in order to allow for homogeneous depletion of the sensor volume. Recent lab measurements and beam tests were conducted for unirradiated modules to study electrical characteristics and hit detection efficiency.
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Submitted 31 January, 2023;
originally announced January 2023.
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DMAPS Monopix developments in large and small electrode designs
Authors:
Christian Bespin,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Patrick Breugnon,
Ivan Caicedo,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Leyre Flores Sanz de Acedo,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Cesar Augusto Marin Tobon,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
Francesco Piro,
Petra Riedler
, et al. (8 additional authors not shown)
Abstract:
LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows…
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LF-Monopix1 and TJ-Monopix1 are depleted monolithic active pixel sensors (DMAPS) in 150 nm LFoundry and 180 nm TowerJazz CMOS technologies respectively. They are designed for usage in high-rate and high-radiation environments such as the ATLAS Inner Tracker at the High-Luminosity Large Hadron Collider (HL-LHC). Both chips are read out using a column-drain readout architecture. LF-Monopix1 follows a design with large charge collection electrode where readout electronics are placed inside. Generally, this offers a homogeneous electrical field in the sensor and short drift distances. TJ-Monopix1 employs a small charge collection electrode with readout electronics separated from the electrode and an additional n-type implant to achieve full depletion of the sensitive volume. This approach offers a low sensor capacitance and therefore low noise and is typically implemented with small pixel size. Both detectors have been characterized before and after irradiation using lab tests and particle beams.
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Submitted 9 July, 2020; v1 submitted 3 June, 2020;
originally announced June 2020.
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Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC
Authors:
M. Barbero,
P. Barrillon,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
Z. Chen,
Y. Degerli,
J. Dingfelder,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
F. Hügging,
H. Krüger,
K. Moustakas,
A. Ouraou,
P. Pangaud,
I. Peric,
D-L. Pohl,
P. Rymaszewski,
P. Schwemling,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We develop…
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Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.
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Submitted 25 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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Mini-MALTA: Radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC
Authors:
M. Dyndal,
V. Dao,
P. Allport,
I. Asensi Tortajada,
M. Barbero,
S. Bhat,
D. Bortoletto,
I. Berdalovic,
C. Bespin,
C. Buttar,
I. Caicedo,
R. Cardella,
F. Dachs,
Y. Degerli,
H. Denizli,
L. Flores Sanz de Acedo,
P. Freeman,
L. Gonella,
A. Habib,
T. Hemperek,
T. Hirono,
B. Hiti,
T. Kugathasan,
I. Mandić,
D. Maneuski
, et al. (19 additional authors not shown)
Abstract:
Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silico…
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Depleted Monolithic Active Pixel Sensor (DMAPS) prototypes developed in the TowerJazz 180 nm CMOS imaging process have been designed in the context of the ATLAS upgrade Phase-II at the HL-LHC. The pixel sensors are characterized by a small collection electrode (3 $μ$m) to minimize capacitance, a small pixel size ($36.4\times 36.4$ $μ$m), and are produced on high resistivity epitaxial p-type silicon. The design targets a radiation hardness of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$, compatible with the outermost layer of the ATLAS ITK Pixel detector. This paper presents the results from characterization in particle beam tests of the Mini-MALTA prototype that implements a mask change or an additional implant to address the inefficiencies on the pixel edges. Results show full efficiency after a dose of $1\times10^{15}$ 1 MeV n$_{eq}$/cm$^{2}$.
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Submitted 14 December, 2019; v1 submitted 26 September, 2019;
originally announced September 2019.
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The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade
Authors:
Ivan Caicedo,
Marlon Barbero,
Pierre Barrillon,
Ivan Berdalovic,
Siddharth Bhat,
Christian Bespin,
Patrick Breugnon,
Roberto Cardella,
Zongde Chen,
Yavuz Degerli,
Jochen Dingfelder,
Stephanie Godiot,
Fabrice Guilloux,
Toko Hirono,
Tomasz Hemperek,
Fabian Hügging,
Hans Krüger,
Thanushan Kugathasan,
Konstantinos Moustakas,
Patrick Pangaud,
Heinz Pernegger,
David-Leon Pohl,
Petra Riedler,
Alexandre Rozanov,
Piotr Rymaszewski
, et al. (5 additional authors not shown)
Abstract:
Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>…
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Two different depleted monolithic CMOS active pixel sensor (DMAPS) prototypes with a fully synchronous column-drain read-out architecture were designed and tested: LF-Monopix and TJ-Monopix. These chips are part of a R&D effort towards a suitable implementation of a CMOS DMAPS for the HL-LHC ATLAS Inner Tracker. LF-Monopix was developed using a 150nm CMOS process on a highly resistive substrate (>2 k$Ω\,$cm), while TJ-Monopix was fabricated using a modified 180 nm CMOS process with a 1 k$Ω\,$cm epi-layer for depletion. The chips differ in their front-end design, biasing scheme, pixel pitch, dimensions of the collecting electrode relative to the pixel size (large and small electrode design, respectively) and the placement of read-out electronics within such electrode. Both chips were operational after thinning down to 100 $\mathrmμ$m and additional back-side processing in LF-Monopix for total bulk depletion. The results in this work include measurements of their leakage current, noise, threshold dispersion, response to minimum ionizing particles and efficiency in test beam campaigns. In addition, the outcome from measurements after irradiation with neutrons up to a dose of $1\times10^{15}\,\mathrm{n_{eq} / cm}^{2}$ and its implications for future designs are discussed.
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Submitted 25 April, 2019; v1 submitted 10 February, 2019;
originally announced February 2019.
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CMOS Monolithic Pixel Sensors based on the Column-Drain Architecture for the HL-LHC Upgrade
Authors:
K. Moustakas,
M. Barbero,
I. Berdalovic,
C. Bespin,
P. Breugnon,
I. Caicedo,
R. Cardella,
Y. Degerli,
N. Egidos Plaja,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krueger,
T. Kugathasan,
C. A. Marin Tobon,
P. Pangaud,
H. Pernegger,
E. J. Schioppa,
W. Snoeys,
M. Vandenbroucke,
T. Wang,
N. Wermes
Abstract:
Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based o…
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Depleted Monolithic Active Pixel Sensors (DMAPS) constitute a promising low cost alternative for the outer layers of the ATLAS experiment Inner Tracker (ITk). Realizations in modern, high resistivity CMOS technologies enhance their radiation tolerance by achieving substantial depletion of the sensing volume. Two DMAPS prototypes that use the same "column-drain" readout architecture and are based on different sensor implementation concepts named LF-Monopix and TJ-Monopix have been developed for the High Luminosity upgrade of the Large Hardon Collider (HL-LHC).
LF-Monopix was fabricated in the LFoundry 150 nm technology and features pixel size of $50x250~μm^{2}$ and large collection electrode opted for high radiation tolerance. Detection efficiency up to 99\% has been measured after irradiation to $1\cdot10^{15}~n_{eq}/cm^{2}$. TJ-Monopix is a large scale $(1x2~cm^{2})$ prototype featuring pixels of $36x40~μm^{2}$ size. It was fabricated in a novel TowerJazz 180 nm modified process that enables full depletion of the sensitive layer, while employing a small collection electrode that is less sensitive to crosstalk. The resulting small sensor capacitance ($<=3~fF$) is exploited by a compact, low power front end optimized to meet the 25ns timing requirement. Measurement results demonstrate the sensor performance in terms of Equivalent Noise Charge (ENC) $\approx11e^{-}$, threshold $\approx300~e^-$, threshold dispersion $\approx30~e^-$ and total power consumption lower than $120~mW/cm^2$.
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Submitted 10 September, 2018;
originally announced September 2018.
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Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade
Authors:
T. Wang,
M. Barbero,
I. Berdalovic,
C. Bespin,
S. Bhat,
P. Breugnon,
I. Caicedo,
R. Cardella,
Z. Chen,
Y. Degerli,
N. Egidos,
S. Godiot,
F. Guilloux,
T. Hemperek,
T. Hirono,
H. Krüger,
T. Kugathasan,
F. Hügging,
C. A. Marin Tobon,
K. Moustakas,
P. Pangaud,
P. Schwemling,
H. Pernegger,
D-L. Pohl,
A. Rozanov
, et al. (3 additional authors not shown)
Abstract:
Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being develo…
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Depleted monolithic active pixel sensors (DMAPS), which exploit high voltage and/or high resistivity add-ons of modern CMOS technologies to achieve substantial depletion in the sensing volume, have proven to have high radiation tolerance towards the requirements of ATLAS in the high-luminosity LHC era. Depleted fully monolithic CMOS pixels with fast readout architectures are currently being developed as promising candidates for the outer pixel layers of the future ATLAS Inner Tracker, which will be installed during the phase II upgrade of ATLAS around year 2025. In this work, two DMAPS prototype designs, named LF-MonoPix and TJ-MonoPix, are presented. LF-MonoPix was designed and fabricated in the LFoundry 150~nm CMOS technology, and TJ-MonoPix has been designed in the TowerJazz 180~nm CMOS technology. Both chips employ the same readout architecture, i.e. the column drain architecture, whereas different sensor implementation concepts are pursued. The design of the two prototypes will be described. First measurement results for LF-MonoPix will also be shown.
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Submitted 29 September, 2017;
originally announced October 2017.