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Pixel detector hybridization and integration with anisotropic conductive adhesives
Authors:
Alexander Volker,
Janis Viktor Schmidt,
Dominik Dannheim,
Peter Svihra,
Mateus Vicente Barreto Pinto,
Rui de Oliveira,
Justus Braach,
Xiao Yang,
Marie Ruat,
Débora Magalhaes,
Matteo Centis Vignali,
Giovanni Calderini,
Helge Kristiansen
Abstract:
A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. For small-scale applications and during the ASIC and sensor development phase, interconnect technologies must also be suitable for the assembly of single-dies typically available…
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A reliable and cost-effective interconnect technology is required for the development of hybrid pixel detectors. The interconnect technology needs to be adapted for the pitch and die sizes of the respective applications. For small-scale applications and during the ASIC and sensor development phase, interconnect technologies must also be suitable for the assembly of single-dies typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D program and the AIDAinnova collaboration, innovative and scalable hybridization concepts are under development for pixel-detector applications in future colliders. This contribution presents recent results of a newly developed in-house single-die interconnection process based on Anisotropic Conductive Adhesives (ACA). The ACA interconnect technology replaces solder bumps with conductive micro-particles embedded in an epoxy layer applied as either film or paste. The electro-mechanical connection between the sensor and ASIC is achieved via thermocompression of the ACA using a flip-chip device bonder. A specific pixel-pad topology is required to enable the connection via micro-particles and create cavities into which excess epoxy can flow. This pixel-pad topology is achieved with an in-house Electroless Nickel Immersion Gold process that is also under development within the project. The ENIG and ACA processes are qualified with a variety of different ASICs, sensors, and dedicated test structures, with pad diameters ranging from 12 μm to 140 μm and pitches between 20 μm and 1.3 mm. The produced assemblies are characterized electrically, with radioactive-source exposures, and in tests with high-momentum particle beams. A focus is placed on recent optimization of the plating and interconnect processes, resulting in an improved plating uniformity and interconnect yield.
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Submitted 18 March, 2024; v1 submitted 15 December, 2023;
originally announced December 2023.
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Characterization of iLGADs using soft X-rays
Authors:
Antonio Liguori,
Rebecca Barten,
Filippo Baruffaldi,
Anna Bergamaschi,
Giacomo Borghi,
Maurizio Boscardin,
Martin Brückner,
Tim Alexander Butcher,
Maria Carulla,
Matteo Centis Vignali,
Roberto Dinapoli,
Simon Ebner,
Francesco Ficorella,
Erik Fröjdh,
Dominic Greiffenberg,
Omar Hammad Ali,
Shqipe Hasanaj,
Julian Heymes,
Viktoria Hinger,
Thomas King,
Pawel Kozlowski,
Carlos Lopez-Cuenca,
Davide Mezza,
Konstantinos Moustakas,
Aldo Mozzanica
, et al. (9 additional authors not shown)
Abstract:
Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybri…
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Experiments at synchrotron radiation sources and X-ray Free-Electron Lasers in the soft X-ray energy range ($250$eV--$2$keV) stand to benefit from the adaptation of the hybrid silicon detector technology for low energy photons. Inverse Low Gain Avalanche Diode (iLGAD) sensors provide an internal gain, enhancing the signal-to-noise ratio and allowing single photon detection below $1$keV using hybrid detectors. In addition, an optimization of the entrance window of these sensors enhances their quantum efficiency (QE). In this work, the QE and the gain of a batch of different iLGAD diodes with optimized entrance windows were characterized using soft X-rays at the Surface/Interface:Microscopy beamline of the Swiss Light Source synchrotron. Above $250$eV, the QE is larger than $55\%$ for all sensor variations, while the charge collection efficiency is close to $100\%$. The average gain depends on the gain layer design of the iLGADs and increases with photon energy. A fitting procedure is introduced to extract the multiplication factor as a function of the absorption depth of X-ray photons inside the sensors. In particular, the multiplication factors for electron- and hole-triggered avalanches are estimated, corresponding to photon absorption beyond or before the gain layer, respectively.
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Submitted 23 October, 2023;
originally announced October 2023.
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High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
Authors:
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
L. Lanteri,
M. Mandurrino,
L. Menzio,
R. Mulargia,
L. Pancheri,
G. Paternoster,
A. Rojas,
H-F W. Sadrozinski,
A. Seiden,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sen…
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The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.
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Submitted 24 November, 2022;
originally announced November 2022.
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Development of LGAD sensors with a thin entrance window for soft X-ray detection
Authors:
Jiaguo Zhang,
Rebecca Barten,
Filippo Baruffaldi,
Anna Bergamaschi,
Giacomo Borghi,
Maurizio Boscardin,
Martin Brueckner,
Maria Carulla,
Matteo Centis Vignali,
Roberto Dinapoli,
Simon Ebner,
Francesco Ficorella,
Erik Froejdh,
Dominic Greiffenberg,
Omar Hammad Ali,
Julian Heymes,
Shqipe Hasanaj,
Viktoria Hinger,
Thomas King,
Pawel Kozlowski,
Carlos Lopez-Cuenca,
Davide Mezza,
Konstantinos Moustakas,
Aldo Mozzanica,
Giovanni Paternoster
, et al. (4 additional authors not shown)
Abstract:
We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the sof…
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We show the developments carried out to improve the silicon sensor technology for the detection of soft X-rays with hybrid X-ray detectors. An optimization of the entrance window technology is required to improve the quantum efficiency. The LGAD technology can be used to amplify the signal generated by the X-rays and to increase the signal-to-noise ratio, making single photon resolution in the soft X-ray energy range possible. In this paper, we report first results obtained from an LGAD sensor production with an optimized thin entrance window. Single photon detection of soft X-rays down to 452~eV has been demonstrated from measurements, with a signal-to-noise ratio better than 20.
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Submitted 24 October, 2022;
originally announced October 2022.
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A Compensated Design of the LGAD Gain Layer
Authors:
Valentina Sola,
Roberta Arcidiacono,
Patrick Asenov,
Giacomo Borghi,
Maurizio Boscardin,
Nicolò Cartiglia,
Matteo Centis Vignali,
Tommaso Croci,
Marco Ferrero,
Alessandro Fondacci,
Giulia Gioachin,
Simona Giordanengo,
Leonardo Lantieri,
Marco Mandurrino,
Luca Menzio,
Vincenzo Monaco,
Arianna Morozzi,
Francesco Moscatelli,
Daniele Passeri,
Nadia Pastrone,
Giovanni Paternoster,
Federico Siviero,
Amedeo Staiano,
Marta Tornago
Abstract:
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim…
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In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.
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Submitted 1 September, 2022;
originally announced September 2022.
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Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors
Authors:
F. Carnesecchi,
S. Strazzi,
A. Alici,
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
D. Cavazza,
G. -F. Dalla Betta,
S. Durando,
M. Ferrero,
F. Ficorella,
O. Hammad Ali,
M. Mandurrino,
A. Margotti,
L. Menzio,
R. Nania,
L. Pancheri,
G. Paternoster,
G. Scioli,
F. Siviero,
V. Sola,
M. Tornago,
G. Vignola
Abstract:
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick…
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This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively.
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Submitted 11 August, 2022;
originally announced August 2022.
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Characterization of timing and spacial resolution of novel TI-LGAD structures before and after irradiation
Authors:
Matias Senger,
Ashish Bisht,
Giacomo Borghi,
Maurizio Boscardin,
Matteo Centis Vignali,
Federico Ficorella,
Omar Hammad Ali,
Ben Kilminster,
Anna Macchiolo,
Giovanni Paternoster
Abstract:
The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads…
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The characterization of spacial and timing resolution of the novel Trench Isolated LGAD (TI-LGAD) technology is presented. This technology has been developed at FBK with the goal of achieving 4D pixels, where an accurate position resolution is combined in a single device with the precise timing determination for Minimum Ionizing Particles (MIPs). In the TI-LGAD technology, the pixelated LGAD pads are separated by physical trenches etched in the silicon. This technology can reduce the interpixel dead area, mitigating the fill factor problem. The TI-RD50 production studied in this work is the first one of pixelated TI-LGADs. The characterization was performed using a scanning TCT setup with an infrared laser and a $^{90}$Sr source setup.
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Submitted 19 April, 2022;
originally announced April 2022.
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DC-coupled resistive silicon detectors for 4-D tracking
Authors:
L. Menzio,
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
M. Mandurrino,
L. Pancheri,
G. Paternoster,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key feat…
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In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution.
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Submitted 14 April, 2022;
originally announced April 2022.
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Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors
Authors:
Federico Siviero,
Roberta Arcidiacono,
Giacomo Borghi,
Maurizio Boscardin,
Nicolo Cartiglia,
Matteo Centis Vignali,
Marco Costa,
Gian Franco Dalla Betta,
Marco Ferrero,
Francesco Ficorella,
Giulia Gioachin,
Marco Mandurrino,
Simone Mazza,
Luca Menzio,
Lucio Pancheri,
Giovanni Paternoster,
Hartmut F. W. Sadrozinski,
Abraham Seiden,
Valentina Sola,
Marta Tornago
Abstract:
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been…
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In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge.
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Submitted 8 March, 2022; v1 submitted 1 December, 2021;
originally announced December 2021.
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The second production of RSD (AC-LGAD) at FBK
Authors:
M. Mandurrino,
R. Arcidiacono,
A. Bisht,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
G. -F. Dalla Betta,
M. Ferrero,
F. Ficorella,
O. Hammad Ali,
A. D. Martinez Rojas,
L. Menzio,
L. Pancheri,
G. Paternoster,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a c…
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In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed.
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Submitted 8 June, 2022; v1 submitted 28 November, 2021;
originally announced November 2021.
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A novel hybrid microdosimeter for radiation field characterization based on TEPC detector and LGADs tracker: a feasibility study
Authors:
M. Missiaggia,
E. Pierobon,
M. Castelluzzo,
A. Perinelli,
F. Cordoni,
M. Centis Vignali,
G. Borghi,
V. E. Bellinzona,
E. Scifoni,
F. Tommasino,
V. Monaco,
L. Ricci,
\\M. Boscardin,
C. La Tessa
Abstract:
In microdosimetry, lineal energies y are calculated from energy depositions $ε$ inside the microdosimeter divided by the mean chord length, whose value is based on geometrical assumptions on both the detector and the radiation field. This work presents an innovative two-stages hybrid detector (HDM: hybrid detector for microdosimetry) composed by a Tissue Equivalent Proportional Counter (TEPC) and…
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In microdosimetry, lineal energies y are calculated from energy depositions $ε$ inside the microdosimeter divided by the mean chord length, whose value is based on geometrical assumptions on both the detector and the radiation field. This work presents an innovative two-stages hybrid detector (HDM: hybrid detector for microdosimetry) composed by a Tissue Equivalent Proportional Counter (TEPC) and a silicon tracker made of 4 Low Gain Avalanche Diode (LGAD). This design provides a direct measurement of energy deposition in tissue as well as particles tracking with a submillimeter spatial resolution. The data collected by the detector allow to obtain the real track length traversed by each particle in the TEPC and thus estimates microdosimetry spectra without the mean chord length approximation. Using Geant4 toolkit, we investigated HDM performances in terms of detection and tracking efficiencies when placed in water and exposed to protons and carbon ions in the therapeutic energy range. The results indicate that the mean chord length approximation underestimate particles with short track, which often are characterized by a high energy deposition and thus can be biologically relevant. Tracking efficiency depends on the LGAD configurations: 34 strips sensors have a higher detection efficiency but lower spatial resolution than 71 strips sensors. Further studies will be performed both with Geant4 and experimentally to optimize the detector design on the bases of the radiation field of interest. The main purpose of HDM is to improve the assessment of the radiation biological effectiveness via microdosimetric measurements, exploiting a new definition of the lineal energy ($y_{T}$), defined as the energy deposition $ε$ inside the microdosimeter divided by the real track length of the particle.
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Submitted 13 July, 2020;
originally announced July 2020.
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Inverse Low Gain Avalanche Detectors (iLGADs) for precise tracking and timing applications
Authors:
E. Currás,
M. Carulla,
M. Centis Vignali,
J. Duarte-Campderros,
M. Fernández,
D. Flores,
A. García,
G. Gómez,
J. González,
S. Hidalgo,
R. Jaramillo,
A. Merlos,
M. Moll,
G. Pellegrini,
D. Quirion,
I. Vila
Abstract:
Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. B…
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Low Gain Avalanche Detector (LGAD) is the baseline sensing technology of the recently proposed Minimum Ionizing Particle (MIP) end-cap timing detectors (MTD) at the Atlas and CMS experiments. The current MTD sensor is designed as a multi-pad matrix detector delivering a poor position resolution, due to the relatively large pad area, around 1 $mm^2$; and a good timing resolution, around 20-30 ps. Besides, in his current technological incarnation, the timing resolution of the MTD LGAD sensors is severely degraded once the MIP particle hits the inter-pad region since the signal amplification is missing for this region. This limitation is named as the LGAD fill-factor problem. To overcome the fill factor problem and the poor position resolution of the MTD LGAD sensors, a p-in-p LGAD (iLGAD) was introduced. Contrary to the conventional LGAD, the iLGAD has a non-segmented deep p-well (the multiplication layer). Therefore, iLGADs should ideally present a constant gain value over all the sensitive region of the device without gain drops between the signal collecting electrodes; in other words, iLGADs should have a 100${\%}$ fill-factor by design. In this paper, tracking and timing performance of the first iLGAD prototypes is presented.
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Submitted 3 April, 2019;
originally announced April 2019.
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Deep Diffused Avalanche Photodiodes for Charged Particles Timing
Authors:
M. Centis Vignali,
P. Dias De Almeida,
L. Franconi,
M. Gallinaro,
Y. Gurimskaya,
B. Harrop,
W. Holmkvist,
C. Lu,
I. Mateu,
M. McClish,
M. Moll,
F. M. Newcomer,
S. Otero Ugobono,
S. White,
M. Wiehe
Abstract:
The upgrades of ATLAS and CMS for the High Luminosity LHC (HL-LHC) highlighted physics objects timing as a tool to resolve primary interactions within a bunch crossing. Since the expected pile-up is around 200, with an r.m.s. time spread of 180 ps, a time resolution of about 30 ps is needed. The timing detectors will experience a 1-MeV neutron equivalent fluence of about $Φ_{eq}=10^{14}$ and…
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The upgrades of ATLAS and CMS for the High Luminosity LHC (HL-LHC) highlighted physics objects timing as a tool to resolve primary interactions within a bunch crossing. Since the expected pile-up is around 200, with an r.m.s. time spread of 180 ps, a time resolution of about 30 ps is needed. The timing detectors will experience a 1-MeV neutron equivalent fluence of about $Φ_{eq}=10^{14}$ and $10^{15}$ cm$^{-2}$ for the barrel and end-cap regions, respectively. In this contribution, deep diffused Avalanche Photo Diodes (APDs) produced by Radiation Monitoring Devices are examined as candidate timing detectors for HL-LHC applications. To improve the detector's timing performance, the APDs are used to directly detect the traversing particles, without a radiator medium where light is produced. Devices with an active area of $8\times8$ mm$^2$ were characterized in beam tests. The timing performance and signal properties were measured as a function of position on the detector using a beam telescope and a microchannel plate photomultiplier (MCP-PMT). Devices with an active area of $2\times2$ mm$^2$ were used to determine the effects of radiation damage and characterized using a ps pulsed laser. These detectors were irradiated with neutrons up to $Φ_{eq}=10^{15}$ cm$^{-2}$.
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Submitted 31 July, 2019; v1 submitted 18 March, 2019;
originally announced March 2019.
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Deep Diffused APDs for Charged Particle Timing Applications: Performance after Neutron Irradiation
Authors:
M. Centis Vignali,
M. Gallinaro,
B. Harrop,
C. Lu,
M. McClish,
M. Moll,
M. Newcomer,
S. Otero Ugobono,
S. White
Abstract:
Recent interest in pile-up mitigation through fast timing at the HL-LHC has focused attention on technologies that now achieve minimum ionising particle (MIP) time resolution of 30 picoseconds or less. The constraints of technical maturity and radiation tolerance narrowed the options in this rapidly developing field for the ATLAS and CMS upgrades to low gain avalanche detectors and silicon photomu…
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Recent interest in pile-up mitigation through fast timing at the HL-LHC has focused attention on technologies that now achieve minimum ionising particle (MIP) time resolution of 30 picoseconds or less. The constraints of technical maturity and radiation tolerance narrowed the options in this rapidly developing field for the ATLAS and CMS upgrades to low gain avalanche detectors and silicon photomultipliers. In a variety of applications where occupancies and doses are lower, devices with pixel elements of order 1 cm$^2$, nevertheless achieving 30 ps, would be attractive. In this paper, deep diffused Avalanche Photo Diodes (APDs) are examined as candidate timing detectors for HL-LHC applications. Devices with an active area of $8 \times 8$ mm$^2$ are characterised using a pulsed infrared laser and, in some cases, high energy particle beams.The timing performance as well as the uniformity of response are examined. The effects of radiation damage on current, signal amplitude, noise, and timing of the APDs are evaluated using detectors with an active area of $2 \times 2$ mm$^2$. These detectors were irradiated with neutrons up to a a 1-MeV neutrons fluence $Φ_{eq} = 10^{15}$ cm$^{-2}$. Their timing performance was characterised using a pulsed infrared laser. While a time resolution of $27 \pm 1$ ps was obtained in a beam test using an $8 \times 8$ mm$^2$ sensor, the present study only demonstrates that gain loss can be compensated by increased detector bias up to fluences of $Φ_{eq} = 6 \cdot 10^{13}$ cm$^{-2}$. So it possibly falls short of the $Φ_{eq} = 10^{14}$ cm$^{-2}$ requirement for the CMS barrel over the lifetime of the HL-LHC.
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Submitted 17 October, 2019; v1 submitted 20 December, 2018;
originally announced December 2018.
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Neutron irradiation effect on SiPMs up to $Φ_{neq}$ = 5 $\times$ 10$^{14}$ cm$^{-2}$
Authors:
M. Centis Vignali,
E. Garutti,
R. Klanner,
D. Lomidze,
J. Schwandt
Abstract:
Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity colliders is the radiation damage induced by hadrons, which leads to a dramatic increase of the dark count rate. KETEK SiPMs have been exposed to vari…
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Silicon Photo-Multipliers (SiPM) are becoming the photo-detector of choice for increasingly more particle detection applications, from fundamental physics to medical and societal applications. One major consideration for their use at high-luminosity colliders is the radiation damage induced by hadrons, which leads to a dramatic increase of the dark count rate. KETEK SiPMs have been exposed to various fluences of reactor neutrons up to $Φ_{neq}$ = 5$\times$10$^{14}$ cm$^{-2}$ (1 MeV equivalent neutrons). Results from the I-V, and C-V measurements for temperatures between $-$30$^\circ$C and $+$30$^\circ$C are presented. We propose a new method to quantify the effect of radiation damage on the SiPM performance. Using the measured dark current the single pixel occupation probability as a function of temperature and excess voltage is determined. From the pixel occupation probability the operating conditions for given requirements can be optimized. The method is qualitatively verified using current measurements with the SiPM illuminated by blue LED light.
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Submitted 14 September, 2017;
originally announced September 2017.
